Laser assisted formation of binary and ternary Ge/Si/Sn alloys (English)
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In:
Thin solid films
;
520
, 8
; 3262-3266
;
2012
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ISSN:
- Article (Journal) / Print
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Title:Laser assisted formation of binary and ternary Ge/Si/Sn alloys
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Contributors:Stefanov, S. ( author ) / Conde, J.C. / Benedetti, A. / Serra, C. / Werner, J. / Oehme, M. / Schulze, J. / Chiussi, S.
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Published in:Thin solid films ; 520, 8 ; 3262-3266
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Place of publication:Amsterdam [u.a.] Elsevier
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Publication date:2012
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.68
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Classification:
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Source:
Table of contents – Volume 520, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3131
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ForewordHartmann, Jean-Michel et al. | 2012
- 3133
-
Low temperature Si:C co-flow and hybrid process using Si3H8/Cl2Bauer, M. / Thomas, S.G. et al. | 2011
- 3139
-
Low temperature catalyst enhanced etch process with high etch rate selectivity for amorphous silicon based alloys over single-crystalline silicon based alloysBauer, M. / Thomas, S.G. et al. | 2011
- 3144
-
Low temperature selective epitaxial growth of SiCP on Si(110) oriented surfacesBauer, M. / Thomas, S.G. et al. | 2011
- 3149
-
Ultra-low resistivity in-situ phosphorus doped Si and SiC epitaxy for source/drain formation in advanced 20nm n-type field effect transistor devicesLoubet, Nicolas / Adam, Thomas / Raymond, Mark / Liu, Qing / Cheng, Kangguo / Sreenivasan, Raghavasimhan / Reznicek, Alexander / Khare, Prasanna / Kleemeier, Walter / Paruchuri, Vamsi et al. | 2011
- 3155
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Effect of Thermal Annealing on Carbon in In-situ Phosphorous-Doped Si1-xCx filmsAdam, Thomas / Loubet, Nicolas / Reznicek, Alexander / Paruchuri, Vamsi / Sampson, Ron / Sadana, Devendra et al. | 2011
- 3158
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Characterization and analysis of epitaxial silicon phosphorus alloys for use in n-channel transistorsWeeks, K.D. / Thomas, S.G. / Dholabhai, P. / Adams, J. et al. | 2011
- 3163
-
Faceting and nanostructure effects in Si and SiGe epitaxyDutartre, Didier / Seiss, Birgit / Campidelli, Yves / Pellissier-Tanon, Denis / Barge, David / Pantel, Roland et al. | 2011
- 3170
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SiGe channels for VT control of high-k metal gate transistors for 32nm complementary metal oxide semiconductor technology and beyondReichel, Carsten / Schoenekess, Joerg / Kronholz, Stephan / Beernink, Gunda / Zeun, Annekathrin / Dietel, Andreas / Kammler, Thorsten et al. | 2011
- 3175
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High strain embedded-SiGe via low temperature reduced pressure chemical vapor depositionHe, Hong / Brabant, Paul / Chung, Keith / Shinriki, Manabu / Adam, Thomas / Reznicek, Alexander / Sadana, Devendra / Hasaka, Satoshi / Francis, Terry et al. | 2011
- 3179
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Growth of high Ge content SiGe on (110) oriented Si wafersHikavyy, A. / Vanherle, W. / Vincent, B. / Dekoster, J. / Bender, H. / Moussa, A. / Witters, L. / Hoffman, T. / Loo, R. et al. | 2011
- 3185
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A benchmarking of silane, disilane and dichlorosilane for the low temperature growth of group IV layersHartmann, J.M. / Benevent, V. / Damlencourt, J.F. / Billon, T. et al. | 2011
- 3190
-
Gas phase particle formation and elimination on Si (100) in low temperature reduced pressure chemical vapor deposition silicon-based epitaxial layersShinriki, Manabu / Chung, Keith / Hasaka, Satoshi / Brabant, Paul / He, Hong / Adam, Thomas N. / Sadana, Devendra et al. | 2011
- 3195
-
Growth of silicon based germanium tin alloysKasper, E. / Werner, J. / Oehme, M. / Escoubas, S. / Burle, N. / Schulze, J. et al. | 2011
- 3201
-
Growth of Ge1−xSnx heteroepitaxial layers with very high Sn contents on InP(001) substratesNakamura, Marika / Shimura, Yosuke / Takeuchi, Shotaro / Nakatsuka, Osamu / Zaima, Shigeaki et al. | 2011
- 3206
-
In-situ Ga doping of fully strained Ge1-xSnx heteroepitaxial layers grown on Ge(001) substratesShimura, Y. / Takeuchi, S. / Nakatsuka, O. / Vincent, B. / Gencarelli, F. / Clarysse, T. / Vandervorst, W. / Caymax, M. / Loo, R. / Jensen, A. et al. | 2011
- 3211
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Low-temperature Ge and GeSn Chemical Vapor Deposition using Ge2H6Gencarelli, F. / Vincent, B. / Souriau, L. / Richard, O. / Vandervorst, W. / Loo, R. / Caymax, M. / Heyns, M. et al. | 2011
- 3216
-
Low threading dislocation Ge on Si by combining deposition and etchingYamamoto, Yuji / Kozlowski, Grzegorz / Zaumseil, Peter / Tillack, Bernd et al. | 2011
- 3222
-
Epitaxial growth of relaxed germanium layers by reduced pressure chemical vapour deposition on (110) and (111) silicon substratesNguyen, Van Huy / Dobbie, A. / Myronov, M. / Norris, D.J. / Walther, T. / Leadley, D.R. et al. | 2011
- 3227
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Reverse graded strain relaxed SiGe buffers for CMOS and optoelectronic integrationShah, V.A. / Dobbie, A. / Myronov, M. / Leadley, D.R. et al. | 2011
- 3232
-
Electrical characterization of wafer-bonded Ge(111)-on-insulator substrates using four-point-probe pseudo-metal-oxide-semiconductor field-effect transistor methodMinami, K. / Nakamura, Y. / Yamasaka, S. / Yoshitake, O. / Kikkawa, J. / Izunome, K. / Sakai, A. et al. | 2011
- 3236
-
Generation of uniaxial tensile strain of over 1% on a Ge substrate for short-channel strained Ge n-type Metal–Insulator–Semiconductor Field-Effect Transistors with SiGe stressorsMoriyama, Yoshihiko / Kamimuta, Yuuichi / Ikeda, Keiji / Tezuka, Tsutomu et al. | 2011
- 3240
-
Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrateZaumseil, Peter / Yamamoto, Yuji / Bauer, Joachim / Schubert, Markus Andreas / Matejova, Jana / Kozlowski, Grzegorz / Schroeder, Thomas / Tillack, Bernd et al. | 2011
- 3245
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Vertical dislocations in Ge films selectively grown in submicron Si windows of patterned substratesHarada, S. / Kikkawa, J. / Nakamura, Y. / Wang, G. / Caymax, M. / Sakai, A. et al. | 2011
- 3249
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Direct and indirect radiative recombination from GeLiu, C.W. / Cheng, T.-H. / Chen, Y.-Y. / Jan, S.-R. / Chen, C.-Y. / Chan, S.T. / Nien, Y.-H. / Yamamoto, Y. / Tillack, B. et al. | 2011
- 3255
-
Effects of dose on activation characteristics of P in GeAnisuzzaman, Mohammad / Sadoh, Taizoh et al. | 2011
- 3259
-
Molecular beam epitaxy grown Ge/Si pin layer sequence for photonic devicesSchulze, J. / Oehme, M. / Werner, J. et al. | 2011
- 3262
-
Laser assisted formation of binary and ternary Ge/Si/Sn alloysStefanov, S. / Conde, J.C. / Benedetti, A. / Serra, C. / Werner, J. / Oehme, M. / Schulze, J. / Chiussi, S. et al. | 2011
- 3266
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Laser ablation and growth of Si and GeYap, Seong Shan / Siew, Wee Ong / Nee, Chen Hon / Reenaas, Turid Worren / Tou, Teck Yong et al. | 2011
- 3271
-
Solid-phase epitaxy of undoped amorphous silicon by in-situ postannealingSkibitzki, Oliver / Yamamoto, Yuji / Schubert, Markus Andreas / Tillack, Bernd et al. | 2011
- 3276
-
Enhancement of SiN-induced compressive and tensile strains in Si free-standing microstructures by modulation of SiN network structuresSadoh, T. / Kurosawa, M. / Heya, A. / Matsuo, N. / Miyao, M. et al. | 2011
- 3279
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Homogeneous Si0.5Ge0.5 bulk crystal growth as substrates for strained Ge thin films by the traveling liquidus-zone methodKinoshita, Kyoichi / Nakatsuka, Osamu / Yoda, Shinichi / Zaima, Shigeaki et al. | 2011
- 3283
-
Influence of SiGe layer thickness and Ge fraction on compressive strain and hole mobility in a SiGe-on-insulator substrate fabricated by the Ge condensation techniqueYang, Haigui / Wang, Dong / Nakashima, Hiroshi et al. | 2011
- 3288
-
Low temperature formation of Si1−x−yGexSny-on-insulator structures by using solid-phase mixing of Ge1−zSnz/Si-on-insulator substratesNakatsuka, Osamu / Mochizuki, Kenta / Shimura, Yosuke / Yamaha, Takashi / Zaima, Shigeaki et al. | 2011
- 3293
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Low temperature (~250°C) layer exchange crystallization of Si1− xGex (x =1–0) on insulator for advanced flexible devicesPark, Jong-Hyeok / Kurosawa, Masashi / Kawabata, Naoyuki / Miyao, Masanobu / Sadoh, Taizoh et al. | 2011
- 3293
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Low temperature (~250^oC) layer exchange crystallization of Si1-xGex (x=1-0) on insulator for advanced flexible devicesPark, J. H. / Kurosawa, M. / Kawabata, N. / Miyao, M. / Sadoh, T. et al. | 2012
- 3296
-
Doping effects on the stability of stacking faults in silicon crystalsOhno, Yutaka / Tokumoto, Yuki / Yonenaga, Ichiro et al. | 2011
- 3300
-
Analysis of buried heterointerfacial hydrogen in highly lattice-mismatched epitaxy on siliconYamazaki, T. / Asaoka, H. / Taguchi, T. / Yamamoto, S. / Yamazaki, D. / Maruyama, R. / Takeda, M. / Shamoto, S. et al. | 2011
- 3304
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Gold nanocluster distribution on faceted and kinked Si nanowiresBoukhicha, Rym / Vincent, Laetitia / Renard, Charles / Gardès, Cyrille / Yam, Vy / Fossard, Frédéric / Patriarche, Gilles / Jabeen, Fauzia / Bouchier, Daniel et al. | 2011
- 3309
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Site-controlled fabrication of dimension-tunable Si nanowire arrays on patterned (001)Si substratesCheng, S.L. / Lo, C.H. / Chuang, C.F. / Lee, S.W. et al. | 2011
- 3314
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Size effect on Ge nanowires growth kinetics by the vapor–liquid–solid mechanismRenard, C. / Boukhicha, R. / Gardès, C. / Fossard, F. / Yam, V. / Vincent, L. / Bouchier, D. / Hajjar, S. / Bubendorff, J.L. / Garreau, G. et al. | 2011
- 3319
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Ge and GexSi1−x islands formation on GexSi1−x solid solution surfaceNikiforov, A.I. / Timofeev, V.A. / Teys, S.A. / Gutakovsky, A.K. / Pchelyakov, O.P. et al. | 2011
- 3322
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Sb mediated formation of Ge/Si quantum dots: Growth and propertiesTonkikh, A.A. / Zakharov, N.D. / Novikov, A.V. / Kudryavtsev, K.E. / Talalaev, V.G. / Fuhrmann, B. / Leipner, H.S. / Werner, P. et al. | 2011
- 3326
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The implant-free quantum well field-effect transistor: Harnessing the power of heterostructuresHellings, Geert / Hikavyy, Andriy / Mitard, Jerome / Witters, Liesbeth / Benbakhti, Brahim / Alian, AliReza / Waldron, Niamh / Bender, Hugo / Eneman, Geert / Krom, Raymond et al. | 2011
- 3332
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Electrical characterization of Ω-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100>- and <110> channel orientationsHabicht, Stefan / Feste, Sebastian / Zhao, Qing-Tai / Buca, Dan / Mantl, Siegfried et al. | 2011
- 3337
-
Radiation damage of Si1-xGex S/D p-type metal oxide semiconductor field effect transistor with different Ge concentrationsNakashima, T. / Idemoto, T. / Tsunoda, I. / Takakura, K. / Yoneoka, M. / Ohyama, H. / Yoshino, K. / Gonzalez, M.B. / Simoen, E. / Claeys, C. et al. | 2011
- 3341
-
Silicon interband tunneling diodes with high peak-to-valley ratiosOehme, M. et al. | 2011
- 3345
-
Arsenic-doped Ge-spiked monoemitter SiGe:C heterojunction bipolar transistors by low-temperature trisilane based chemical vapor depositionYou, Shuzhen / Decoutere, Stefaan / Nguyen, Ngoc Duy / Van Huylenbroeck, Stefaan / Sibaja-Hernandez, Arturo / Venegas, Rafael / Loo, Roger / De Meyer, Kristin et al. | 2011
- 3349
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Fluctuation of average position of electrons in Coulomb island in Si single-electron transistorHoriguchi, Seiji / Fujiwara, Akira et al. | 2011
- 3354
-
Ge-on-Si optoelectronicsLiu, Jifeng / Camacho-Aguilera, Rodolfo / Bessette, Jonathan T. / Sun, Xiaochen / Wang, Xiaoxin / Cai, Yan / Kimerling, Lionel C. / Michel, Jurgen et al. | 2011
- 3361
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Molecular beam epitaxy grown GeSn p-i-n photodetectors integrated on SiWerner, J. / Oehme, M. / Schirmer, A. / Kasper, E. / Schulze, J. et al. | 2011
- 3365
-
An artificial nonradiative recombination center model created by use of a Si1−xGex/Si quantum-well-inserted pseudomorphic superlatticeTerada, Yosuke / Yasutake, Yuhsuke / Fukatsu, Susumu et al. | 2011
- 3369
-
A simulation study of thin film tandem solar cells with a nanoplate absorber bottom cellChang, S.T. / Hsieh, B.-F. / Liu, Y.-C. et al. | 2011
- 3374
-
Physics of Schottky-barrier change by segregation and structural disorder at metal/Si interfaces: First-principles studyNakayama, T. / Kobinata, K. et al. | 2011
- 3379
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Nickel Schottky junction on epi-Ge for strained Ge metal–oxide–semiconductor field-effect transistors source/drain engineeringLee, M.H. / Hsieh, B.-F. / Chang, S.T. / Lee, S.W. et al. | 2011
- 3382
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Source/drain junction fabrication for Ge metal-oxide-semiconductor field-effect transistorsYamamoto, Keisuke / Yamanaka, Takeshi / Ueno, Ryuji / Hirayama, Kana / Yang, Haigui / Wang, Dong / Nakashima, Hiroshi et al. | 2011
- 3387
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Influence of oxygen transfer in Hf-based high-k dielectrics on flatband voltage shiftNabatame, Toshihide / Kimura, Masayuki / Yamada, Hiroyuki / Ohi, Akihiko / Ohishi, Tomoji / Chikyow, Toyohiro et al. | 2011
- 3392
-
Behavior of N atoms after thermal nitridation of Si1−xGex surfaceKawashima, Tomoyuki / Sakuraba, Masao / Tillack, Bernd / Murota, Junichi et al. | 2011
- 3397
-
Improvement of Al2O3/Ge interfacial properties by O2-annealingShibayama, Shigehisa / Kato, Kimihiko / Sakashita, Mitsuo / Takeuchi, Wakana / Nakatsuka, Osamu / Zaima, Shigeaki et al. | 2011
- 3402
-
High dielectric constant terbium oxide (Tb2O3) dielectric deposited on strained-Si:CKao, Chyuan Haur / Liu, Kou Chen / Lee, Min Hung / Cheng, Shih Nan / Huang, Ching Hua / Lin, Wen Kai et al. | 2011
- 3406
-
Temperature effects on the growth and electrical properties of Er2O3 films on Ge substratesJi, T. / Nie, T.X. / Cui, J. / Fang, Z.B. / Yang, X.J. / Fan, Y.L. / Zhong, Z.Y. / Jiang, Z.M. et al. | 2011
- 3410
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Suppression of Mn segregation in Ge/Mn5Ge3 heterostructures induced by interstitial carbonDau, Minh-Tuan / Le Thanh, Vinh / Le, Thi-Giang / Spiesser, Aurélie / Petit, Matthieu / Michez, Lisa A. / Ngo, Thu-Huong / Vu, Dinh Lam / Nguyen, Quang Liem / Sebban, Pierre et al. | 2011
- 3415
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Resistive switching characteristics of multilayered (HfO2/Al2O3)n n=19 thin filmTzeng, Wen-Hsien / Zhong, Chia-Wen / Liu, Kou-Chen / Chang, Kow-Ming / Lin, Horng-Chih / Chan, Yi-Chun / Kuo, Chun-Chih / Tsai, Feng-Yu / Tseng, Ming Hong / Chen, Pang-Shiu et al. | 2011
- 3419
-
Influence of Al co-deposition on the crystal growth of Co-based Heusler-compound thin films on Si(111)Oki, Soichiro / Yamada, Shinya / Murakami, Tatsuhiko / Miyao, Masanobu / Hamaya, Kohei et al. | 2011