Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors (English)
- New search for: Ide, Keisuke
- New search for: Ide, Keisuke
- New search for: Kikuchi, Yutomo
- New search for: Nomura, Kenji
- New search for: Kamiya, Toshio
- New search for: Hosono, Hideo
In:
Thin solid films
;
520
, 10
; 3787-3791
;
2012
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ISSN:
- Article (Journal) / Print
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Title:Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistors
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Contributors:
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Published in:Thin solid films ; 520, 10 ; 3787-3791
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Place of publication:Amsterdam [u.a.] Elsevier
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Publication date:2012
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 33.68
- Further information on Basic classification
- New search for: 535/3485
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Keywords:
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Source:
Table of contents – Volume 520, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3713
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PrefaceGinley, David / Kamiya, Toshio / Shigesato, Yuzo / Hosono, Hideo et al. | 2011
- 3714
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Advances in understanding of transparent conducting oxidesRobertson, J. / Gillen, R. / Clark, S.J. et al. | 2011
- 3721
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Energy band alignment at interfaces of semiconducting oxides: A review of experimental determination using photoelectron spectroscopy and comparison with theoretical predictions by the electron affinity rule, charge neutrality levels, and the common anion ruleKlein, Andreas et al. | 2011
- 3729
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Rapid thermal annealing of sputter-deposited ZnO/ZnO:N/ZnO multilayered structuresWatanabe, Fumiya / Shirai, Hajime / Fujii, Yasuhiko / Hanajiri, Tatsuro et al. | 2011
- 3736
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Low-temperature deposition of crystallized TiO2 thin filmsYasuda, Yoji / Kamikuri, Kento / Tobisaka, Masayuki / Hoshi, Yoichi et al. | 2011
- 3741
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The electrical and optical properties of indium zinc tin oxide thin films with different Sn/Zn ratioDamisih / Ma, Hong Chan / Kim, Jeong-Joo / Lee, Hee Young et al. | 2011
- 3746
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High-rate deposition of Ta-doped SnO2 films by reactive magnetron sputtering using a Sn–Ta metal-sintered targetMuto, Y. / Nakatomi, S. / Oka, N. / Iwabuchi, Y. / Kotsubo, H. / Shigesato, Y. et al. | 2011
- 3751
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In-situ analyses on the reactive sputtering process to deposit Al-doped ZnO films using an Al–Zn alloy targetTsukamoto, Naoki / Oka, Nobuto / Shigesato, Yuzo et al. | 2011
- 3755
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Optical and electrical properties of heat-resistant Sb-doped Sn1−xHfxO2 transparent conducting filmsUeda, Kazushige / Kishigawa, Yusuke / Takano, Yasukazu et al. | 2011
- 3760
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Ti-doped Gd2O3 sensing membrane for electrolyte–insulator–semiconductor pH sensorKao, Chyuan Haur / Wang, Jer Chyi / Lai, Chao Sung / Huang, Chuan Yu / Ou, Jiun Cheng / Wang, Hsin Yuan et al. | 2011
- 3764
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Amorphous structure and electrical performance of low-temperature annealed amorphous indium zinc oxide transparent thin film transistorsLee, Sunghwan / Bierig, Brian / Paine, David C. et al. | 2011
- 3769
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The effect of metallization contact resistance on the measurement of the field effect mobility of long-channel unannealed amorphous In–Zn–O thin film transistorsLee, Sunghwan / Park, Hongsik / Paine, David C. et al. | 2011
- 3774
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Threshold voltage shift by controlling Ga in solution processed Si–In–Zn–O thin film transistorsChoi, Jun Young / Kim, SangSig / Lee, Sang Yeol et al. | 2011
- 3778
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Stability and high-frequency operation of amorphous In–Ga–Zn–O thin-film transistors with various passivation layersNomura, Kenji / Kamiya, Toshio / Hosono, Hideo et al. | 2011
- 3783
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Effect of magnesium oxide passivation on the performance of amorphous indium–gallium–zinc-oxide thin film transistorsYoo, Dong Youn / Chong, Eugene / Kim, Do Hyung / Ju, Byeong Kwon / Lee, Sang Yeol et al. | 2011
- 3787
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Effects of low-temperature ozone annealing on operation characteristics of amorphous In–Ga–Zn–O thin-film transistorsIde, Keisuke / Kikuchi, Yutomo / Nomura, Kenji / Kamiya, Toshio / Hosono, Hideo et al. | 2011
- 3791
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Operation model with carrier-density dependent mobility for amorphous In–Ga–Zn–O thin-film transistorsAbe, Katsumi / Takahashi, Kenji / Sato, Ayumu / Kumomi, Hideya / Nomura, Kenji / Kamiya, Toshio / Hosono, Hideo et al. | 2011
- 3796
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Comparative analysis of temperature thermally induced instability between Si–In–Zn–O and Ga–In–Zn–O thin film transistorsLee, Sang Yeol / Kim, Do Hyung / Kim, Bosul / Jung, Hyun Kwang / Kim, Dae Hwan et al. | 2011
- 3800
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Modeling of amorphous InGaZnO thin film transistors using an empirical mobility function based on the exponential deep and tail statesShin, Jae-Heon / Cheong, Woo-Seok / Hwang, Chi-Sun / Chung, Sung Mook et al. | 2011
- 3803
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Influence of rapid thermal annealing on surface texture-etched Al-doped ZnO films prepared by various magnetron sputtering methodsMinami, Tadatsugu / Hirano, Tomoyasu / Miyata, Toshihiro / Nomoto, Jun-ichi et al. | 2011
- 3808
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Photovoltaic properties of n-type amorphous In–Ga–Zn–O and p-type single crystal Si heterojunction solar cells: Effects of Ga contentLee, Kyeongmi / Nomura, Kenji / Yanagi, Hiroshi / Kamiya, Toshio / Hosono, Hideo et al. | 2011
- 3813
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Sputtered nickel oxide thin film for efficient hole transport layer in polymer–fullerene bulk-heterojunction organic solar cellWidjonarko, N. Edwin / Ratcliff, Erin L. / Perkins, Craig L. / Sigdel, Ajaya K. / Zakutayev, Andriy / Ndione, Paul F. / Gillaspie, Dane T. / Ginley, David S. / Olson, Dana C. / Berry, Joseph J. et al. | 2011
- 3819
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Influence of Cu2O surface treatment on the photovoltaic properties of Al-doped ZnO/Cu2O solar cellsNishi, Yuki / Miyata, Toshihiro / Nomoto, Jun-ichi / Minami, Tadatsugu et al. | 2011
- 3823
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Thermochromic fenestration with VO2-based materials: Three challenges and how they can be metLi, S.-Y. / Niklasson, G.A. / Granqvist, C.G. et al. | 2011
- 3829
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Quantum dot phosphors and their application to inorganic electroluminescence deviceOmata, Takahisa / Tani, Yuki / Kobayashi, Satoshi / Otsuka-Yao-Matsuo, Shinya et al. | 2011
- 3835
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Fabricating transparent waveguide for wireless communicationOgino, Tsuyoshi / Ohashi, Naoki / Hishita, Shunichi / Sakaguchi, Isao / Adachi, Yutaka / Nakajima, Kunihiko / Haneda, Hajime et al. | 2011
- 3839
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Electrochromic properties of nickel oxide based thin films sputter deposited in the presence of water vaporGreen, S.V. / Watanabe, M. / Oka, N. / Niklasson, G.A. / Granqvist, C.G. / Shigesato, Y. et al. | 2011
- 3843
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Band-edge luminescence from SrTiO3: No polaron effectYamada, Yasuhiro / Kanemitsu, Yoshihiko et al. | 2011
- 3847
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Real-time investigation on photocatalytic oxidation of gaseous methanol with nanocrystalline WO3–TiO2 composite filmsSadale, Shivaji B. / Noda, Kei / Kobayashi, Kei / Yamada, Hirofumi / Matsushige, Kazumi et al. | 2011
- 3852
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CF4 plasma effect combined with rapid thermal annealing for high-k Er2O3 dielectricsKao, Chyuan Haur / Fan, Hsuan Chi / Cheng, Shih Nan / Liao, Chien Jung et al. | 2011
- 3857
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Investigation of Ti-doped Gd2O3 charge trapping layer with HfO2 blocking oxide for memory applicationKao, Chyuan Haur / Chen, Chun Chi / Huang, Ching Hua / Huang, Chuan Yu / Lin, Chih Ju / Ou, Jiun Cheng et al. | 2011
- 3862
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Stable deposition of silicon oxynitride thin films with intermediate refractive indices by reactive sputteringNakanishi, Yuki / Kato, Kazuhiro / Omoto, Hideo / Tomioka, Takao / Takamatsu, Atsushi et al. | 2011
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