The interface structure of high performance ZnO Schottky diodes (English)
- New search for: Mayes, Edwin L.H.
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In:
Physica / B
;
407
, 15
; 2867-2871
;
2012
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ISSN:
- Article (Journal) / Print
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Title:The interface structure of high performance ZnO Schottky diodes
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Contributors:
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Published in:Physica / B ; 407, 15 ; 2867-2871
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Publisher:
- New search for: North-Holland Physics Publ.
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Place of publication:Amsterdam
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Publication date:2012
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ISSN:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 407, Issue 15
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2829
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Muonium transitions in Ge-rich SiGe alloysMengyan, P.W. / Lichti, R.L. / Celebi, Y.G. / Carroll, B.R. / Baker, B.B. / Bani-Salameh, H.N. / Yonenaga, I. et al. | 2011
- 2833
-
Intrinsic defects in GaAs and InGaAs through hybrid functional calculationsKomsa, Hannu-Pekka / Pasquarello, Alfredo et al. | 2011
- 2838
-
Structural and local electrical properties of AlInN/AlN/GaN heterostructuresMinj, A. / Cavalcoli, D. / Cavallini, A. et al. | 2011
- 2841
-
First principles study of O defects in CdSeT-Thienprasert, J. / Limpijumnong, S. / Du, M.-H. / Singh, D.J. et al. | 2011
- 2846
-
Nanoscale order in ZnS:(Cd, O)Díaz Albarrán, S.F. / Elyukhin, V.A. / Rodríguez Peralta, P. et al. | 2011
- 2850
-
Investigation of electron energy states in InGaN/GaN multiple quantum wellsAsghar, M. / Hurwitz, E. / Melton, A. / Jamil, M. / Ferguson, Ian T. / Tsu, Rahpael et al. | 2011
- 2854
-
Defect detection in semiconductor layers with built-in electric field with the use of cathodoluminescencePluska, Mariusz / Czerwinski, Andrzej / Ratajczak, Jacek / Szerling, Anna / Kątcki, Jerzy et al. | 2011
- 2858
-
Characterization of AgInS2 thin films prepared by vacuum evaporationAkaki, Yoji / Yamashita, Kyohei / Yoshitake, Tsuyoshi / Nakamura, Shigeuki / Seto, Satoru / Tokuda, Takahiro / Yoshino, Kenji et al. | 2011
- 2861
-
Theoretical study of band gap in CuAlO2: Pressure dependence and self-interaction correctionNakanishi, Akitaka / Katayama-Yoshida, Hiroshi et al. | 2011
- 2864
-
Motion of positively charged muonium in ZnOBaker, B.B. / Lichti, R.L. / Celebi, Y.G. / Mengyan, P.W. / Bani-Salameh, H.N. et al. | 2011
- 2867
-
The interface structure of high performance ZnO Schottky diodesMayes, Edwin L.H. / Partridge, James G. / Field, Matthew R. / McCulloch, Dougal G. / Durbin, Steven M. / Kim, Hyung-Suk / Allen, Martin W. et al. | 2011
- 2871
-
Phase diagrams of polar surface reconstructions of zinc oxideGluba, M.A. / Nickel, N.H. et al. | 2011
- 2875
-
First-principles study of the magnetic properties of nitrogen-doped alkaline earth metal oxidesSeike, Masayoshi / An Dinh, Van / Sato, Kazunori / Katayama Yoshida, Hiroshi et al. | 2011
- 2879
-
Muonium dynamics in transparent conducting oxidesCelebi, Y.G. / Lichti, R.L. / Baker, B.B. / Mengyan, P.W. / Bani-Salameh, H.N. / Catak, E. et al. | 2011
- 2883
-
Charge states of a hydrogen defect (3326cm−1 line) in ZnOHerklotz, F. / Lavrov, E.V. / Weber, J. et al. | 2011
- 2886
-
Recombination activity of dislocations on (0001) introduced in wurtzite ZnO at elevated temperaturesOhno, Yutaka / Tokumoto, Yuki / Yonenaga, Ichiro / Fujii, Katsushi / Yao, Takafumi / Yamamoto, Naoki et al. | 2011
- 2889
-
UV-laser-light-controlled photoluminescence of metal oxide nanoparticles in different gas atmospheres: BaTiO3, SrTiO3 and HfO2Mochizuki, Shosuke / Saito, Takashi / Yoshida, Kaori et al. | 2011
- 2895
-
Effect of Co-doping content on hydrothermal derived ZnO array filmsHe, Xinhua / Yang, Hu / Chen, Zhiwu / Liao, Stephen S Y et al. | 2011
- 2900
-
Investigation of the Si doping effect in β-Ga2O3 films by co-sputtering of gallium oxide and SiTakakura, Kenichiro / Funasaki, Suguru / Tsunoda, Isao / Ohyama, Hidenori / Takeuchi, Daisuke / Nakashima, Toshiyuki / Shibuya, Mutsuo / Murakami, Katsuya / Simoen, Eddy / Claeys, Cor et al. | 2011
- 2903
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Device quality ZnO grown using a Filtered Cathodic Vacuum ArcElzwawi, Salim / Kim, Hyung Suk / Heinhold, Robert / Lynam, Max / Turner, Gary / Partridge, Jim G. / McCulloch, Dougal G. / Reeves, Roger J. / Allen, Martin W. et al. | 2011
- 2907
-
Effect of O-vacancy defects on the Schottky barrier heights in Ni/SiO2 and Ni/HfO2 interfacesNoh, Hyeon-Kyun / Oh, Young Jun / Chang, K.J. et al. | 2011
- 2911
-
Defect-effects on the photoluminescence of ZrO2 bulk, film and nanocrystalsMochizuki, Shosuke / Saito, Takashi et al. | 2011
- 2915
-
Structural characterizations of sol–gel synthesized TiO2 and Ce/TiO2 nanostructuresNiltharach, A. / Kityakarn, S. / Worayingyong, A. / Thienprasert, J.T- / Klysubun, W. / Songsiriritthigul, P. / Limpijumnong, S. et al. | 2011
- 2919
-
Identification of a metastable state of the VZnH2 defect in ZnOBastin, D. / Lavrov, E.V. / Weber, J. et al. | 2011
- 2923
-
Defect annealing in Sb/Sn implanted diamond investigated with 119Sn Mössbauer spectroscopyBharuth-Ram, K. / Gunnlaugsson, H.P. / Masenda, H. / Sielemann, R. / Weyer, G. / Köster, U. et al. | 2011
- 2926
-
First principles study of electronic and structural properties of the Ge/GeO2 interfaceBroqvist, Peter / Binder, Jan Felix / Pasquarello, Alfredo et al. | 2011
- 2932
-
Oxygen in Ge crystals grown by the B2O3 encapsulated Czochralski methodYonenaga, Ichiro / Taishi, Toshinori / Ise, Hideaki / Murao, Yu / Inoue, Kaihei / Ohsawa, Takayuki / Tokumoto, Yuki / Ohno, Yutaka / Hashimoto, Yoshio et al. | 2011
- 2935
-
dc-Hydrogen plasma induced defects in bulk n-GeNyamhere, C. / Venter, A. / Murape, D.M. / Auret, F.D. / Coelho, S.M.M. / Botha, J.R. et al. | 2011
- 2939
-
Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfacesBinder, Jan Felix / Broqvist, Peter / Pasquarello, Alfredo et al. | 2011
- 2943
-
The surface blistering kinetics and the H-platelet evolution in H-implanted germaniumYang, Fan / Zhang, Xuan Xiong / Ye, Tian Chun / Zhuang, Song Lin et al. | 2011
- 2947
-
Structural analysis of the phase separation in magnetic semiconductor (Zn, Cr)TeKobayashi, Hiroaki / Nishio, Yôtarô / Kanazawa, Ken / Kuroda, Shinji / Mitome, Masanori / Bando, Yoshio et al. | 2011
- 2950
-
Computational materials design of filled tetrahedral compound magnetic semiconductorsSato, K. / Fujimoto, S. / Fujii, H. / Fukushima, T. / Katayama-Yoshida, H. et al. | 2011
- 2954
-
The influence of nitrogen vacancies on the magnetic behaviour of rare-earth nitridesRuck, B.J. / Natali, F. / Plank, N.O.V. / Do Le, Binh / Azeem, M. / Alfheid, Maha / Meyer, C. / Trodahl, H.J. et al. | 2011
- 2957
-
Hydrogen interaction with GaN metal–insulator–semiconductor diodesIrokawa, Y. et al. | 2011
- 2960
-
Characterisation of defects in p-GaN by admittance spectroscopyElsherif, O.S. / Vernon-Parry, K.D. / Evans-Freeman, J.H. / Airey, R.J. / Kappers, M. / Humphreys, C.J. et al. | 2011
- 2964
-
Hexagonal (wurtzite) GaN inclusions as a defect in cubic (zinc-blende) GaNZainal, N. / Novikov, S.V. / Akimov, A.V. / Staddon, C.R. / Foxon, C.T. / Kent, A.J. et al. | 2011
- 2967
-
The CuPL defect and the Cus1Cui3 complexEstreicher, S.K. / Carvalho, A. et al. | 2011
- 2970
-
Chemical etching to dissolve dislocation cores in multicrystalline siliconGregori, N.J. / Murphy, J.D. / Sykes, J.M. / Wilshaw, P.R. et al. | 2011
- 2974
-
Reconfigurations and diffusion of trivacancy in siliconMarkevich, V.P. / Peaker, A.R. / Hamilton, B. / Lastovskii, S.B. / Murin, L.I. / Coutinho, J. / Markevich, A.V. / Rayson, M.J. / Briddon, P.R. / Svensson, B.G. et al. | 2011
- 2978
-
Raman investigation of ro-vibrational modes of interstitial H2 in SiKoch, S.G. / Lavrov, E.V. / Weber, J. et al. | 2011
- 2981
-
Three carbon pairs in SiDocaj, A. / Estreicher, S.K. et al. | 2011
- 2985
-
Symmetry and structure of N–O shallow donor complexes in siliconAlt, H.Ch. / Wagner, H.E. et al. | 2011
- 2989
-
First-principles study of the segregation of boron dopants near the interface between crystalline Si and amorphous SiO2Oh, Young Jun / Noh, Hyeon-Kyun / Chang, K.J. et al. | 2011
- 2993
-
300mm Czochralski silicon wafers optimized with respect to voids with laterally homogeneous oxygen precipitationKissinger, G. / Raming, G. / Wahlich, R. / Müller, T. et al. | 2011
- 2998
-
Study of irradiation induced changes of electrical and functional characteristics in Ge doped Si diodesGaubas, E. / Uleckas, A. / Rafi, J.M. / Chen, J. / Yang, D. / Vanhellemont, J. et al. | 2011
- 3002
-
Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methodsMeduňa, M. / Růžička, J. / Caha, O. / Buršík, J. / Svoboda, M. et al. | 2011
- 3006
-
Interaction of dopant atoms with stacking faults in siliconOhno, Yutaka / Tokumoto, Yuki / Taneichi, Hiroto / Yonenaga, Ichiro / Togase, Kensuke / Nishitani, Sigeto R. et al. | 2011
- 3009
-
On the impact of stress on intrinsic defect formation during single crystal silicon growthVanhellemont, Jan et al. | 2011
- 3013
-
A contribution to the identification of the E5 defect level as tri-vacancy (V3)Junkes, Alexandra / Pintilie, Ioana / Fretwurst, Eckhart / Eckstein, Doris et al. | 2011
- 3016
-
Kinetics of self-interstitials reactions in p-type silicon irradiated with alpha particlesMakarenko, L.F. / Moll, M. / Evans-Freeman, J.H. / Lastovski, S.B. / Murin, L.I. / Korshunov, F.P. et al. | 2011
- 3020
-
Thermal evolution of surface blistering and exfoliation due to ion-implanted hydrogen monomers into Si〈111〉Liang, J.H. / Hu, C.H. / Bai, C.Y. / Chao, D.S. / Lin, C.M. et al. | 2011
- 3026
-
Laplace deep level transient spectroscopy: Embodiment and evolutionPeaker, A.R. / Markevich, V.P. / Hawkins, I.D. / Hamilton, B. / Bonde Nielsen, K. / Gościński, K. et al. | 2011
- 3031
-
On the effects of NBTI degradation in p-MOSFET devicesHussin, H. / Soin, N. / Karim, N.M. / Wan Muhamad Hatta, S.F. et al. | 2011
- 3034
-
Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surfaceOgawa, Masatoshi / Kamiya, Shoji / Izumi, Hayato / Tokuda, Yutaka et al. | 2011
- 3038
-
Study of deep level defects in doped and semi-insulating n-6H-SiC epilayers grown by sublimation methodAsghar, M. / Iqbal, F. / Faraz, S.M. / Jokubavicius, V. / Wahab, Q. / Syväjärvi, M. et al. | 2011
- 3041
-
Characterization of deep level defects in sublimation grown p-type 6H-SiC epilayers by deep level transient spectroscopyAsghar, M. / Iqbal, F. / Faraz, S. / Jokubavicius, V. / Wahab, Q. / Syväjärvi, M. et al. | 2011
- 3044
-
Evaluating effect of surface state density at the interfaces in degraded bulk heterojunction organic solar cellArora, Swati / Singh, Vinamrita / Arora, Manoj / Pal Tandon, Ram et al. | 2011
- 3047
-
Stabilization of organic thin film transistors by ion implantationFraboni, B. / Cosseddu, P. / Wang, Y.Q. / Schulze, R.K. / Cavallini, A. / Nastasi, M. / Bonfiglio, A. et al. | 2011
- 3052
-
The study of below and above band-edge imperfection states in In2S3 solar energy materialsHo, Ching-Hwa et al. | 2011
- 3056
-
First-principles materials design of CuInSe2-based high-efficiency photovoltaic solar cellsTani, Yoshimasa / Sato, Kazunori / Katayama-Yoshida, Hiroshi et al. | 2011
- 3059
-
Hybrid solar cells with conducting polymers and vertically aligned silicon nanowire arrays: The effect of silicon conductivityWoo, Sungho / Hoon Jeong, Jae / Kun Lyu, Hong / Jeong, Seonju / Hyoung Sim, Jun / Hyun Kim, Wook / Soo Han, Yoon / Kim, Youngkyoo et al. | 2011
- 3063
-
Comparison between various finite-size supercell correction schemes for charged defect calculationsKomsa, Hannu-Pekka / Rantala, Tapio / Pasquarello, Alfredo et al. | 2011
- IFC
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Editorial Board| 2012
- iii
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Proceedings of the 26th International Conference on Defects in Semiconductors (ICDS-26)Evans-Freeman, Jan / Vernon-Parry, Karen / Allen, Martin et al. | 2012
- iv
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The manuscript for these proceedings were received by the Publisher: begining of July 2011| 2012
- v
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Organizing committees and sponsors| 2012
- vii
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Contents| 2012
- xi
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PrefaceEvans-Freeman, Jan / Vernon-parry, Karen / Allen, Martin et al. | 2012