Improved OFF-State Reliability of Nonvolatile Resistive Switch With Low Programming Voltage (English)
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In:
IEEE transactions on electron devices
;
59
, 9
; 2357-2363
;
2012
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ISSN:
- Article (Journal) / Print
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Title:Improved OFF-State Reliability of Nonvolatile Resistive Switch With Low Programming Voltage
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Contributors:
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Published in:IEEE transactions on electron devices ; 59, 9 ; 2357-2363
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2012
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ISSN:
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ZDBID:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 59, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2165
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Application of exponential tail-state distribution model to the above-threshold characteristics of Zn-based oxide thin-film transistorsTakechi, K. / Nakata, M. / Eguchi, T. / Yamaguchi, H. / Kaneko, S. et al. | 2009
- 2283
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New Subject Heading on “Memory Devices and Technology”Cressler, John D. / Chatterjee, Amitava et al. | 2012
- 2283
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EDITORIAL - New Subject Heading on "Memory Devices and Technology"Cressler, J D et al. | 2012
- 2284
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A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETsChiang, Te-Kuang et al. | 2012
- 2284
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Silicon and Column IV Semiconductor Devices - A Quasi-Two-Dimensional Threshold Voltage Model for Short-Channel Junctionless Double-Gate MOSFETsChiang, T-K et al. | 2012
- 2290
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The Effective Mass, Band Gap, Device Characteristics, and Performance Considerations for AGNR and AGNRFETsXia, Tongsheng / Wang, Yu / Zhang, Liujun / Li, Hongge et al. | 2012
- 2296
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High-Frequency Modeling of Poly-Si Thin-Film Transistors for Low-Cost RF ApplicationsKim, Soo Youn / Loke, Wing-Fai / Jung, Byunghoo / Roy, Kaushik et al. | 2012
- 2302
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Ultrafast Resistive-Switching Phenomena Observed in NiN-Based ReRAM CellsKim, Hee-Dong / An, Ho-Myoung / Kim, Tae Geun et al. | 2012
- 2308
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Device Design and Estimated Performance for p-Type Junctionless Transistors on Bulk Germanium SubstratesYu, Ran / Das, Samaresh / Ferain, Isabelle / Razavi, Pedram / Shayesteh, Maryam / Kranti, Abhinav / Duffy, Ray / Colinge, Jean-Pierre et al. | 2012
- 2314
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Study on Characteristics of Poly-Si TFTs With 3-D Finlike Channels Fabricated by Nanoimprint TechnologyChen, Henry J. H. / Jhang, Jia-Rong / Huang, Chien-Jen et al. | 2012
- 2321
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A Correlation-Considered Variation-Aware Interconnect Parasitic Profile Extraction MethodZheng, Ren / Xi, Li / Shaojian, Hu / Shoumian, Chen / Yuhang, Zhao / Yanling, Shi et al. | 2012
- 2327
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Effect of Tunnel Recombination Junction on Crossover Between the Dark and Illuminated Current–Voltage Curves of Tandem Solar CellsBills, Braden / Liao, Xianbo / Galipeau, David W. / Fan, Qi Hua et al. | 2012
- 2331
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String Current in Decananometer nand Flash Arrays: A Compact-Modeling InvestigationPaolucci, Giovanni M. / Miccoli, Carmine / Monzio Compagnoni, Christian / Spinelli, Alessandro S. / Lacaita, Andrea L. et al. | 2012
- 2338
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Studies on Halo Implants in Controlling Short-Channel Effects of Nanoscale Ge Channel pMOSFETsMondal, Chandrima / Biswas, Abhijit et al. | 2012
- 2345
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Transient Thermal Resistance Test of Single-Crystal-Silicon Solar CellZhang, Jihong / Gao, Yulin / Lu, Yijun / Zhu, Lihong / Guo, Ziquan / Chen, Guolong / Chen, Zhong et al. | 2012
- 2350
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Reduction of Charge Trapping in HfC>2 Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial LayersJung, H-S et al. | 2012
- 2350
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Reduction of Charge Trapping in $\hbox{HfO}_{2}$ Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial LayersJung, Hyung-Suk / Yu, Il-Hyuk / Kim, Hyo Kyeom / Lee, Sang Young / Lee, Joohwi / Choi, Yujin / Chung, Yoon Jang / Lee, Nae-In / Park, Tae Joo / Choi, Jung-Hae et al. | 2012
- 2350
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Reduction of Charge Trapping in HfO~2 Film on Ge Substrates by Atomic Layer Deposition of Various Passivating Interfacial LayersJung, H.-S. / Yu, I.-H. / Kim, H.K. / Lee, S.Y. / Lee, J. / Choi, Y. / Chung, Y.J. / Lee, N.-I. / Park, T.J. / Choi, J.-H. et al. | 2012
- 2357
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Improved Off-State Reliability of Nonvolatile Resistive Switch With Low Programming VoltageTada, Munehiro / Sakamoto, Toshitsugu / Miyamura, Makoto / Banno, Naoki / Okamoto, Koichiro / Iguchi, Noriyuki / Hada, Hiromitsu et al. | 2012
- 2363
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Resistive Switching Behavior of Partially Anodized Aluminum Thin Film at Elevated TemperaturesZhu, Wei / Chen, T. P. / Yang, Ming / Liu, Yang / Fung, S. et al. | 2012
- 2368
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Optoelectronic Performance of Radial-Junction Si Nanopillar and Nanohole Solar CellsLi, Hua-Min / Lee, Dae-Yeong / Yoo, Won Jong et al. | 2012
- 2375
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Performance Evaluation of III–V Nanowire TransistorsJansson, Kristofer / Lind, Erik / Wernersson, Lars-Erik et al. | 2012
- 2375
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Compound Semiconductor Devices - Performance Evaluation of III-V Nanowire TransistorsJansson, K et al. | 2012
- 2383
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Interface-State Modeling of Al~2O~3-InGaAs MOS From Depletion to InversionChen, H.-P. / Yuan, Y. / Yu, B. / Ahn, J. / McIntyre, P.C. / Asbeck, P.M. / Rodwell, M.J.W. / Taur, Y. et al. | 2012
- 2383
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Interface-State Modeling of A12O3-InGaAs MOS From Depletion to InversionChen, H-P et al. | 2012
- 2383
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Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to InversionChen, Han-Ping / Yuan, Yu / Yu, Bo / Ahn, Jaesoo / McIntyre, Paul C. / Asbeck, Peter M. / Rodwell, Mark J. W. / Taur, Yuan et al. | 2012
- 2390
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Thin Film Transistors - A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETsOrtiz-Conde, A et al. | 2012
- 2390
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A Rigorous Classical Solution for the Drain Current of Doped Symmetric Double-Gate MOSFETsOrtiz-Conde, Adelmo / Garcia-Sanchez, Francisco J. et al. | 2012
- 2396
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A Physical Model for Grain-Boundary-Induced Threshold Voltage Variation in Polysilicon Thin-Film TransistorsHo, Chih-Hsiang / Panagopoulos, Georgios / Roy, Kaushik et al. | 2012
- 2403
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Optoelectronics, Displays, and Imaging - Investigation of Hole-Blocking Contacts for High-Conversion-Gain Amorphous Selenium Detectors for X-Ray ImagingAbbaszadeh, S et al. | 2012
- 2403
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Investigation of Hole-Blocking Contacts for High-Conversion-Gain Amorphous Selenium Detectors for X-Ray ImagingAbbaszadeh, Shiva / Allec, Nicholas / Ghanbarzadeh, Sina / Shafique, Umar / Karim, Karim S. et al. | 2012
- 2410
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Dark Current in Silicon Photomultiplier Pixels: Data and ModelPagano, Roberto / Corso, Domenico / Lombardo, Salvatore / Valvo, Giuseppina / Sanfilippo, Delfo Nunzio / Fallica, Giogio / Libertino, Sebania et al. | 2012
- 2417
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Solid-State Power and High Voltage Devices - A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETsSung, W et al. | 2012
- 2417
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A Comparative Study of Gate Structures for 9.4-kV 4H-SiC Normally On Vertical JFETsSung, Woongje / Van Brunt, Edward / Baliga, B. Jayant / Huang, Alex Q. et al. | 2012
- 2424
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High-Temperature Performance of AlGaN/GaN MOSHEMT With SiO2 Gate Insulator Fabricated on Si (111) SubstrateHusna, F et al. | 2012
- 2424
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High-Temperature Performance of AlGaN/GaN MOSHEMT With $\hbox{SiO}_{2}$ Gate Insulator Fabricated on Si (111) SubstrateHusna, Fatima / Lachab, Mohamed / Sultana, Mahbuba / Adivarahan, Vinod / Fareed, Qhalid / Khan, Asif et al. | 2012
- 2430
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A Vertical Power MOSFET With an Interdigitated Drift Region Using High- $k$ InsulatorChen, Xingbi / Huang, Mingmin et al. | 2012
- 2438
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A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on $\hbox{Si}_{1-x}\hbox{Ge}_{x}$ Epilayer on Si SubstratesTang, Mengrao / Li, Cheng / Wu, Zheng / Liu, Guanzhou / Huang, Wei / Lai, Hongkai / Chen, Songyan et al. | 2012
- 2438
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A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on a Si~1~-~xGe~x Epilayer on a Si SubstrateTang, M. / Li, C. / Wu, Z. / Liu, G. / Huang, W. / Lai, H. / Chen, S. et al. | 2012
- 2438
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Materials, Processing, and Packaging - A Study of the Schottky-Barrier Height of Nickel Germanosilicide Contacts Formed on a Si1-xGex Epilayer on a Si SubstrateTang, M et al. | 2012
- 2444
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Metal-to-Multilayer-Graphene Contact—Part I: Contact Resistance ModelingKhatami, Yasin / Li, Hong / Xu, Chuan / Banerjee, Kaustav et al. | 2012
- 2453
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Metal-to-Multilayer-Graphene Contact—Part II: Analysis of Contact ResistanceKhatami, Yasin / Li, Hong / Xu, Chuan / Banerjee, Kaustav et al. | 2012
- 2461
-
Solid State Device Phenomena - Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM — Part I: Experimental StudyNardi, F et al. | 2012
- 2461
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental StudyNardi, Federico / Larentis, Stefano / Balatti, Simone / Gilmer, David C. / Ielmini, Daniele et al. | 2012
- 2468
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: ModelingLarentis, Stefano / Nardi, Federico / Balatti, Simone / Gilmer, David C. / Ielmini, Daniele et al. | 2012
- 2476
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Theoretical Estimation of Electromigration in Metallic Carbon Nanotubes Considering Self-Heating EffectVerma, Rekha / Bhattacharya, Sitangshu / Mahapatra, Santanu et al. | 2012
- 2483
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Low-Frequency Diffusion Noise in Resistive-Switching Memories Based on Metal–Oxide Polymer StructureRocha, Paulo R. F. / Gomes, Henrique Leonel / Vandamme, Lode K. J. / Chen, Qian / Kiazadeh, Asal / de Leeuw, Dago M. / Meskers, Stefan C. J. et al. | 2012
- 2488
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Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part I: Physical InvestigationCastellani, Niccolò / Monzio Compagnoni, Christian / Mauri, Aurelio / Spinelli, Alessandro S. / Lacaita, Andrea L. et al. | 2012
- 2495
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Three-Dimensional Electrostatics- and Atomistic Doping-Induced Variability of RTN Time Constants in Nanoscale MOS Devices—Part II: Spectroscopic ImplicationsMonzio Compagnoni, Christian / Castellani, Niccolò / Mauri, Aurelio / Spinelli, Alessandro S. / Lacaita, Andrea L. et al. | 2012
- 2501
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Edge Effects in Bottom-Gate Inverted Staggered Thin-Film TransistorsMativenga, Mallory / Um, Jae Kwang / Kang, Dong Han / Mruthyunjaya, Ravi K. / Chang, Jeff H. / Heiler, Gregory N. / Tredwell, Timothy J. / Jang, Jin et al. | 2012
- 2507
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Sensors and Actuators - Addressable Nanowire Field-Effect-Transistor Biosensors With Local BackgatesBaek, D J et al. | 2012
- 2507
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Addressable Nanowire Field-Effect-Transistor Biosensors With Local BackgatesBaek, David J. / Choi, Sung-Jin / Ahn, Jae-Hyuk / Kim, Jee-Yeon / Choi, Yang-Kyu et al. | 2012
- 2512
-
A CMOS Biocompatible Charge Detector for Biosensing ApplicationsLai, Stefano / Caboni, Alessandra / Loi, Daniela / Barbaro, Massimo et al. | 2012
- 2520
-
Vacuum Electron Devices - Design of a Triodelike Electron Gun for Millimeter-Wave GyrodevicesRobertson, C W et al. | 2012
- 2520
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Design of a Triodelike Electron Gun for Millimeter-Wave GyrodevicesRobertson, C. W. / Young, A. R. / Ronald, K. / Cross, A. W. / Whyte, C. G. et al. | 2012
- 2524
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Scaling of High-Aspect-Ratio Current Limiters for the Individual Ballasting of Large Arrays of Field EmittersGuerrera, Stephen A. / Velasquez-Garcia, Luis Fernando / Akinwande, Akintunde Ibitayo et al. | 2012
- 2531
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On the RF Power-Handling Capabilities of Forward- and Inverse-Mode SiGe HBT RF Switches Fabricated on Thick-Film SOISeth, Sachin / Song, Peter / Cressler, John D. / Babcock, Jeff A. / Cestra, Greg et al. | 2012
- 2531
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BRIEFS - On the RF Power-Handling Capabilities of Forward- and Inverse-Mode SiGe HBT RF Switches Fabricated on Thick-Film SOISeth, S et al. | 2012
- 2534
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Simple and Efficient MASTAR Threshold Voltage and Subthreshold Slope Models for Low-Doped Double-Gate MOSFETLacord, Joris / Huguenin, Jean-Luc / Skotnicki, Thomas / Ghibaudo, Gérard / Boeuf, Frédéric et al. | 2012
- 2539
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A Compact CMOS Compatible Oxide Antifuse With Polysilicon Diode DriverHe, Jin / Chan, Wan Tim / Wang, Cheng / Lou, Haijun / Wang, Ruonan / Li, Lin / Liang, Hailang / Wu, Wen / Ye, Yun / Ma, Yutao et al. | 2012
- 2542
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Modeling Non-Quasi-Static Effects in SiGe HBTs Using Improved Charge Partitioning SchemeAugustine, Noel / Kumar, Khamesh / Bhattacharyya, Arkaprava / Zimmer, Thomas / Chakravorty, Anjan et al. | 2012
- 2546
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A Quasi-One-Dimensional Model of the Potential Barrier and Carrier Density in the Channel of Si and 4H-SiC BSITsBellone, Salvatore / Di Benedetto, Luigi / Licciardo, Gian Domenico et al. | 2012
- 2550
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Effect of Asymmetric Channel on Charging Behavior of 22-nm Quantum-Dot Floating-Gate Flash Memory CellShrirao, Ashwini / Gautam, Rashmi / Patrikar, Rajendra M. et al. | 2012
- 2555
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Low-Temperature ZnO TFTs Fabricated by Reactive Sputtering of Metallic Zinc TargetLi, Shaojuan / Cai, Yong / Han, Dedong / Wang, Yi / Sun, Lei / Chan, Mansun / Zhang, Shengdong et al. | 2012
- 2559
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Themed issue on micro/nano-electro-mechanical-systems (MEMS/NEMS)| 2012
- 2559
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ANNOUNCEMENTS - Call for Papers — Themed Issue on Micro/Nano-Electro-Mechanical-Systems (MEMS/NEMS)| 2012
- 2560
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Quality without compromise| 2012
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Table of Contents| 2012
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IEEE Transactions on Electron Devices publication information| 2012
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IEEE Transactions on Electron Devices information for authors| 2012