Vacuum Electron Devices - A Gas Switch Triggered by a Microhollow Cathode Discharge (MHCD) Array With Lower Trigger Energy (English)
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In:
IEEE transactions on electron devices
;
60
, 2
; 875-879
;
2013
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ISSN:
- Article (Journal) / Print
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Title:Vacuum Electron Devices - A Gas Switch Triggered by a Microhollow Cathode Discharge (MHCD) Array With Lower Trigger Energy
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Contributors:
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Published in:IEEE transactions on electron devices ; 60, 2 ; 875-879
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2013
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Source:
Table of contents – Volume 60, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 116
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A High-Frequency Transconductance Method for Characterization of High-k Border Traps in III-V MOSFETsJohansson, S et al. | 2013
- 521
-
Table of contents| 2013
- 524
-
A Warm Welcome to a New T-ED EditorCressler, John D. et al. | 2013
- 524
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SPECIAL ISSUE ON ADVANCED MODELING OF POWER DEVICES AND THEIR APPLICATIONS - EDITORIAL - A Warm Welcome to a New T-ED EditorCressler, J D et al. | 2013
- 525
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Special Issue on Advanced Modeling of Power Devices and Their ApplicationsMiura-Mattausch, Mitiko / Arora, Narain D. / Seebacher, Ehrenfried / Saha, Samar K. et al. | 2013
- 525
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GUEST EDITORIAL - Special Issue on Advanced Modeling of Power Devices and Their ApplicationsMiura-Mattausch, M et al. | 2013
- 528
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Role of Simulation Technology for the Progress in Power Devices and Their ApplicationsOhashi, Hiromichi / Omura, Ichiro et al. | 2013
- 528
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SPECIAL ISSUE PAPERS - Role of Simulation Technology for the Progress in Power Devices and Their Applications (Invited Paper)Ohashi, H et al. | 2013
- 535
-
Analytical Modeling of IGBTs: Challenges and Solutions (Invited Paper)Baliga, B J et al. | 2013
- 535
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Analytical Modeling of IGBTs: Challenges and SolutionsBaliga, B. J. et al. | 2013
- 544
-
Application of Electrical Circuit Simulations in Hybrid Vehicle DevelopmentUeta, Takashi / Nagao, Masaru / Hamada, Kimimori et al. | 2013
- 544
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Application of Electrical Circuit Simulations in Hybrid Vehicle Development (Invited Paper)Ueta, T et al. | 2013
- 551
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Limiting Factors of the Safe Operating Area for Power Devices (Invited Paper)Schulze, H-J et al. | 2013
- 551
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Limiting Factors of the Safe Operating Area for Power DevicesSchulze, Hans-Joachim / Niedernostheide, Franz-Josef / Pfirsch, Frank / Baburske, Roman et al. | 2013
- 563
-
Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Undamped Inductive SwitchingBreglio, G et al. | 2013
- 563
-
Experimental Detection and Numerical Validation of Different Failure Mechanisms in IGBTs During Unclamped Inductive SwitchingBreglio, Giovanni / Irace, Andrea / Napoli, Ettore / Riccio, Michele / Spirito, Paolo et al. | 2013
- 571
-
HiSIM-IGBT: A Compact Si-IGBT Model for Power Electronic Circuit DesignMiyake, Masataka / Navarro, Dondee / Feldmann, Uwe / Mattausch, Hans Jürgen / Kojima, Takashi / Ogawa, Takaoki / Ueta, Takashi et al. | 2013
- 580
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A Sequential Model Parameter Extraction Technique for Physics-Based IGBT Compact ModelsNavarro, Dondee / Sano, Takeshi / Furui, Yoshiharu et al. | 2013
- 587
-
Modeling of Soft-Switching Losses of IGBTs in High-Power High-Efficiency Dual-Active-Bridge DC/DC Converters (Invited Paper)Ortiz, G et al. | 2013
- 587
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Modeling of Soft-Switching Losses of IGBTs in High-Power High-Efficiency Dual-Active-Bridge DC/DC ConvertersOrtiz, Gabriel / Uemura, Hirofumi / Bortis, Dominik / Kolar, Johann Walter / Apeldoorn, Oscar et al. | 2013
- 598
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Layout Role in Failure Physics of IGBTs Under Overloading Clamped Inductive TurnoffPerpina, Xavier / Cortes, Ignasi / Urresti-Ibanez, Jesús / Jorda, Xavier / Rebollo, Jose et al. | 2013
- 606
-
Accurate Power Circuit Loss Estimation Method for Power Converters With Si-IGBT and SiC-Diode Hybrid PairTakao, Kazuto / Ohashi, Hiromichi et al. | 2013
- 613
-
Physical Models for SiC and Their Application to Device Simulations of SiC Insulated-Gate Bipolar Transistors (Invited Paper)Hatakeyama, T et al. | 2013
- 613
-
Physical Models for SiC and Their Application to Device Simulations of SiC Insulated-Gate Bipolar TransistorsHatakeyama, Tetsuo / Fukuda, Kenji / Okumura, Hajime et al. | 2013
- 622
-
Modeling of SiC IGBT Turn-Off Behavior Valid for Over 5-kV Circuit SimulationMiyake, Masataka / Ueno, Masaya / Feldmann, Uwe / Mattausch, Hans Jürgen et al. | 2013
- 630
-
Behavioral Approach to SiC-Merged-Diode Electrothermal Model GenerationStarzak, L et al. | 2013
- 630
-
Behavioral Approach to SiC MPS Diode Electrothermal Model GenerationStarzak, Łukasz / Zubert, Mariusz / Janicki, Marcin / Torzewicz, Tomasz / Napieralska, Małgorzata / Jablonski, Grzegorz / Napieralski, Andrzej et al. | 2013
- 639
-
A Compact Physical AlGaN/GaN HFET ModelHou, Danqiong / Bilbro, Griff L. / Trew, Robert J. et al. | 2013
- 639
-
A Compact Physical AlGaN/GaN HFET Model (Invited Paper)Hou, D Q et al. | 2013
- 646
-
GaN Power Transistor Modeling for High-Speed Converter Circuit DesignNakajima, Akira / Takao, Kazuto / Ohashi, Hiromichi et al. | 2013
- 653
-
The Second-Generation of HiSIM_HV Compact Models for High-Voltage MOSFETsMattausch, Hans Jürgen / Miyake, Masataka / Iizuka, Takahiro / Kikuchihara, Hideyuki / Miura-Mattausch, Mitiko et al. | 2013
- 653
-
The Second-Generation of HiSIM-HV Compact Models for High-Voltage MOSFETs (Invited Paper)Mattausch, H J et al. | 2013
- 662
-
An Accurate and Robust Compact Model for High-Voltage MOS IC SimulationWang, Wenyuan / Tudor, Bogdan / Xi, Xuemei / Liu, Weidong / Lee, Frank Jyhchwen et al. | 2013
- 670
-
Measurement and Compact Modeling of 1/f Noise in HV-MOSFETsMavredakis, Nikolaos / Bucher, Matthias / Friedrich, Roland / Bazigos, Antonios / Krummenacher, François / Sallese, Jean-Michel / Gneiting, Thomas / Pflanzl, Walter / Seebacher, Ehrenfried et al. | 2013
- 677
-
A Physics-Based Analytical Formula Not Shown Noise Model for RESURF LDMOS TransistorsMahmud, M. I. / Celik-Butler, Z. / Hao, P. / Srinivasan, P. / Hou, F. C. / Cheng, X. / Amey, B. L. / Pendharkar, S. et al. | 2013
- 677
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A Physics-Based Analytical $\hbox{1}/f$ Noise Model for RESURF LDMOS TransistorsMahmud, M. Iqbal / Celik-Butler, Zeynep / Hao, Pinghai / Srinivasan, Purushothaman / Hou, Fan-Chi / Cheng, Xu / Amey, Benjamin L. / Pendharkar, Sameer et al. | 2013
- 677
-
A Physics-Based Analytical 1/f Noise Model for RESURF LDMOS TransistorsMahmud, M I et al. | 2013
- 684
-
Modeling of the Impurity-Gradient Effect in High-Voltage Laterally Diffused MOSFETsIizuka, Takahiro / Fukushima, Kenji / Tanaka, Akihiro / Sakuda, Takashi / Kikuchihara, Hideyuki / Miyake, Masataka / Mattausch, Hans Jürgen / Miura-Mattausch, Mitiko et al. | 2013
- 691
-
TCAD Simulation of Hot-Carrier and Thermal Degradation in STI-LDMOS TransistorsReggiani, Susanna / Barone, Gaetano / Poli, Stefano / Gnani, Elena / Gnudi, Antonio / Baccarani, Giorgio / Chuang, Ming-Yeh / Tian, Weidong / Wise, Rick et al. | 2013
- 699
-
Electrothermal Simulation of Self-Heating in DMOS Transistors up to Thermal RunawayPfost, Martin / Boianceanu, Cristian / Lohmeyer, Henning / Stecher, Matthias et al. | 2013
- 708
-
Parameter Extraction and Comparison of Self-Heating Models for Power MOSFETs Based on Transient Current MeasurementsKoh, Risho / Iizuka, Takahiro et al. | 2013
- 714
-
Modeling and Simulation Methodology for SOA-Aware Circuit Design in DC and Pulsed-Mode Operation of HV MOSFETsKhandelwal, Sourabh / Sharma, Surya / Chauhan, Yogesh Singh / Gneiting, Thomas / Fjeldly, Tor A. et al. | 2013
- 719
-
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction StudyDeng, Yexin / Huang, Peng / Chen, Bing / Yang, Xiaolin / Gao, Bin / Wang, Juncheng / Zeng, Lang / Du, Gang / Kang, Jinfeng / Liu, Xiaoyan et al. | 2013
- 719
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Silicon and Column IV Semiconductor Devices - RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction StudyDeng, Y et al. | 2013
- 727
-
Strain-Induced Performance Enhancement of Trigate and Omega-Gate Nanowire FETs Scaled Down to 10-nm WidthCoquand, Remi / Casse, Mikaël / Barraud, Sylvain / Cooper, David / Maffini-Alvaro, Virginie / Samson, Marie-Pierre / Monfray, Stephane / Boeuf, Frédéric / Ghibaudo, Gérard / Faynot, Olivier et al. | 2013
- 733
-
A Free and Fast Three-Dimensional/Two-Dimensional Solar Cell Simulator Featuring Conductive Boundary and Quasi-Neutrality ApproximationsFell, Andreas et al. | 2013
- 739
-
Back-Gate Bias Dependence of the Statistical Variability of FDSOI MOSFETs With Thin BOXYang, Yunxiang / Markov, Stanislav / Cheng, Binjie / Zain, Anis Suhaila Mohd / Liu, Xiaoyan / Cheng, Asen et al. | 2013
- 746
-
$\hbox{Ni}(\hbox{Ge}_{1 - x}\hbox{Sn}_{x})$ Ohmic Contact Formation on N-Type $\hbox{Ge}_{1 - x}\hbox{Sn}_{x}$ Using Selenium or Sulfur Implant and SegregationTong, Yi / Han, Genquan / Liu, Bin / Yang, Yue / Wang, Lanxiang / Wang, Wei / Yeo, Yee-Chia et al. | 2013
- 746
-
Formula Not Shown Ohmic Contact Formation on N-Type Formula Not Shown Using Selenium or Sulfur Implant and SegregationTong, Y. / Han, G. / Liu, B. / Yang, Y. / Wang, L. / Wang, W. / Yeo, Y. C. et al. | 2013
- 746
-
Ni(Ge1-xSnx) Ohmic Contact Formation on N-Type Ge1-xSnx Using Selenium or Sulfur Implant and SegregationTong, Y et al. | 2013
- 753
-
Error-Free Matthiessen's Rule in the MOSFET Universal Mobility RegionChen, Ming-Jer / Lee, Wei-Han / Huang, Yi-Hui et al. | 2013
- 759
-
A Switched Inductor Topology Using a Switchable Artificial Grounded Metal Guard Ring for Wide-FTR MMW VCO ApplicationsYou, Pen-Li / Huang, Tzuen-Hsi et al. | 2013
- 767
-
Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure DesignChen, Chih Hua / Liao, M.-H. / Chang, Li Cheng / Kao, Ssu Chieh / Yu, M.-Y. / Liu, G.-H. / Huang, Meng-Chi et al. | 2013
- 767
-
Compound Semiconductor Devices - Relaxation of Residual Stress in Bent GaN Film on Sapphire Substrate by Laser Treatment With an Optimized Surface Structure DesignChen, C H et al. | 2013
- 771
-
High-Voltage Isolation Technique Using Fe Ion Implantation for Monolithic Integration of AlGaN/GaN TransistorsUmeda, Hidekazu / Takizawa, Toshiyuki / Anda, Yoshiharu / Ueda, Tetsuzo / Tanaka, Tsuyoshi et al. | 2013
- 776
-
A High-Frequency Transconductance Method for Characterization of High- $\kappa$ Border Traps in III-V MOSFETsJohansson, Sofia / Berg, Martin / Persson, Karl-Magnus / Lind, Erik et al. | 2013
- 776
-
A High-Frequency Transconductance Method for Characterization of High- Formula Not Shown Border Traps in III-V MOSFETsJohansson, S. / Berg, M. / Persson, K. M. / Lind, E. et al. | 2013
- 782
-
Effective Thermal Management in Ultraviolet Light-Emitting Diodes With Micro-LED ArraysLobo Ploch, N. / Rodriguez, H. / Stolmacker, C. / Hoppe, M. / Lapeyrade, M. / Stellmach, J. / Mehnke, F. / Wernicke, Tim / Knauer, A. / Kueller, V. et al. | 2013
- 787
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Temperature Dependence of Annealed and Nonannealed HEMT Ohmic Contacts Between 5 and 350 KAlt, Andreas R. / Bolognesi, C. R. et al. | 2013
- 793
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Circuit Analysis of Photosensitive Capacitance in Semi-Insulating GaAsBoulais, Kevin A. / Santiago, Francisco / Wick, Peter L. / Mejeur, Joel M. / Rayms-Keller, Alfredo / Lowry, Michael S. / Long, Karen J. / Sessions, Walter D. et al. | 2013
- 799
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A Novel Self-Aligned Double-Channel Polysilicon Thin-Film TransistorChien, Feng-Tso / Chen, Chii-Wen / Lee, Tien-Chun / Wang, Chi-Ling / Cheng, Ching-Hwa / Kang, Tsung-Kuei / Chiu, Hsien-Chin et al. | 2013
- 799
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Thin Film Transistors - A Novel Self-Aligned Double-Channel Polysilicon Thin-Film TransistorChien, F-T et al. | 2013
- 805
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A Quad-Sampling Wide-Dynamic-Range Pulse-Frequency Modulation PixelTsai, Tsung-Hsun / Hornsey, Richard et al. | 2013
- 805
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Optoelectronics, Display, Imaging - A Quad-Sampling Wide-Dynamic-Range Pulse-Frequency Modulation PixelTsai, T-H et al. | 2013
- 812
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Enhanced Visible Light Sensitivity by Gold Line-and-Space Grating Gate Electrode in Thin Silicon-On-Insulator p-n Junction PhotodiodeSatoh, Hiroaki / Ono, Atsushi / Inokawa, Hiroshi et al. | 2013
- 819
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The Destruction Mechanism in GCTsLophitis, Neophytos / Antoniou, Marina / Udrea, Florin / Bauer, Friedhelm D. / Nistor, Iulian / Arnold, M. / Wikstrom, Tobias / Vobecky, Jan et al. | 2013
- 819
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Solid-State Power and High Voltage Devices - The Destruction Mechanism in GCTsLophitis, N et al. | 2013
- 827
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Low-Cost CPW Meander Inductors Utilizing Ink-Jet Printing on Flexible Substrate for High-Frequency ApplicationsMenicanin, Aleksandar B. / Zivanov, Ljiljana D. / Damnjanovic, Mirjana S. / Maric, Andrea M. et al. | 2013
- 827
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Materials, Processing, and Packaging - Low-Cost CPW Meander Inductors Utilizing Ink-Jet Printing on Flexible Substrate for High-Frequency ApplicationsMenicanin, A B et al. | 2013
- 833
-
Solid-State Device Phenomena - Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETsAdamu-Lema, F et al. | 2013
- 833
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Accuracy and Issues of the Spectroscopic Analysis of RTN Traps in Nanoscale MOSFETsAdamu-Lema, Fikru / Monzio Compagnoni, Christian / Amoroso, Salvatore M. / Castellani, Niccolò / Gerrer, Louis / Markov, Stanislav / Spinelli, Alessandro S. / Lacaita, Andrea L. / Asenov, Asen et al. | 2013
- 840
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A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part I: Charge ModelDuarte, Juan Pablo / Choi, Sung-Jin / Moon, Dong-Il / Ahn, Jae-Hyuk / Kim, Jee-Yeon / Kim, Sungho / Choi, Yang-Kyu et al. | 2013
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A Universal Core Model for Multiple-Gate Field-Effect Transistors. Part II: Drain Current ModelDuarte, Juan Pablo / Choi, Sung-Jin / Moon, Dong-Il / Ahn, Jae-Hyuk / Kim, Jee-Yeon / Kim, Sungho / Choi, Yang-Kyu et al. | 2013
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A Self-Consistent Compact Model of Ballistic Nanowire MOSFET With Rectangular Cross SectionNumata, Tatsuhiro / Uno, Shigeyasu / Hattori, Junichi / Mil'nikov, Gennady / Kamakura, Yoshinari / Mori, Nobuya / Nakazato, Kazuo et al. | 2013
- 863
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Electron-Trap and Hole-Trap Distributions in Metal/Oxide/Nitride/Oxide/Silicon StructuresIshida, Takeshi / Mine, Toshiyuki / Hisamoto, Digh / Shimamoto, Yasuhiro / Yamada, Ren-ichi et al. | 2013
- 870
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Printed Half-Wave and Full-Wave Rectifier Circuits Based on Organic DiodesHeljo, Petri S. / Li, Miao / Lilja, Kaisa E. / Majumdar, Himadri S. / Lupo, Donald et al. | 2013
- 870
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Molecular and Organic Devices - Printed Half-Wave and Full-Wave Rectifier Circuits Based on Organic DiodesHeljo, P S et al. | 2013
- 875
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A Gas Switch Triggered by a Microhollow Cathode Discharge (MHCD) Array With Lower Trigger EnergyLiu, Kefu / Teng, Yaqing / Li, Liuxia / Qiu, Jian et al. | 2013
- 875
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Vacuum Electron Devices - A Gas Switch Triggered by a Microhollow Cathode Discharge (MHCD) Array With Lower Trigger EnergyLiu, K et al. | 2013
- 880
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BRIEFS - Measurement of UV from a Microplasma by a Microfabricated Amorphous Selenium DetectorAbbaszadeh, S et al. | 2013
- 880
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Measurement of UV from a Microplasma by a Microfabricated Amorphous Selenium DetectorAbbaszadeh, Shiva / Karim, Karim S. / Karanassios, Vassili et al. | 2013
- 884
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Performance Study of a Schottky Barrier Double-Gate MOSFET Using a Two-Dimensional Analytical ModelSchwarz, Mike / Holtij, Thomas / Kloes, Alexander / Iniguez, Benjamín et al. | 2013
- 887
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Research of Single-Event Burnout in Power UMOSFETsWang, Ying / Zhang, Yue / Yu, Chenghao et al. | 2013
- 893
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Special Issue on GaN Electronic Devices| 2013
- 893
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ANNOUNCEMENTS - Call for Papers — GaN V02 Oct 2013| 2013
- 895
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Call for Papers — 2013 IRPS| 2013
- 895
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2013 IEEE International Reliability Physics Symposium (IRPS)| 2013
- 896
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2013 IEEE 39th Photovoltaic Specialists Conference (PVSC)| 2013
- C1
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Front cover| 2013
- C2
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IEEE Transactions on Electron Devices publication information| 2013
- C3
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IEEE Transactions on Electron Devices information for authors| 2013
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Call for Papers — 2013 PVSC| 2013