Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE (English)
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In:
Journal of crystal growth
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378
; 310-313
;
2013
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- Article (Journal) / Print
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Title:Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBE
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Published in:Journal of crystal growth ; 378 ; 310-313
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Place of publication:Amsterdam [u.a.]
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Publication date:2013
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 378
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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The Seventeenth International Conference on Molecular Beam Epitaxy, Nara, Japan, September 23–28, 2012| 2013
- 3
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PrefaceAkimoto, Katsuhiro / Suemasu, Takashi / Okumura, Hajime et al. | 2013
- 5
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Size-dependent contact angle of Ga droplets on GaAsJo, Masafumi / Mano, Takaaki / Sakuma, Yoshiki / Sakoda, Kazuaki et al. | 2013
- 8
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Correlation between adatom dynamics and electron accumulation at the epitaxial InAs(111)A surfaceKanisawa, Kiyoshi et al. | 2013
- 13
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Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)Ito, Tomonori / Hirai, Kentaro / Akiyama, Toru / Nakamura, Kohji et al. | 2012
- 17
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Plasma-assisted molecular beam epitaxy process combined with a liquid phase electroepitaxy, a novel method for the growth of GaN layersNovikov, S.V. / Powell, R.E.L. / Kent, A.J. / Foxon, C.T. et al. | 2013
- 21
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Ab initio-based approach to initial incorporation of Bi on |GaAs(001)-c(4×4)α surfaceMurase, Isao / Akiyama, Toru / Nakamura, Kohji / Ito, Tomonori et al. | 2013
- 25
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Quantitative study of microtwins in GaP/Si thin film and GaAsPN quantum wells grown on silicon substratesNguyen Thanh, T. / Robert, C. / Giudicelli, E. / Létoublon, A. / Cornet, C. / Ponchet, A. / Rohel, T. / Balocchi, A. / Micha, J.S. / Perrin, M. et al. | 2012
- 29
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Ab initio-based approach to incorporation of N atoms on GaAs(001) surfacesSugitani, Tatsuhiko / Akiyama, Toru / Nakamura, Kohji / Ito, Tomonori et al. | 2013
- 34
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In situ three-dimensional X-ray reciprocal-space mapping of GaAs epitaxial films on Si(001)Takahasi, M. / Nakata, Y. / Suzuki, H. / Ikeda, K. / Kozu, M. / Hu, W. / Ohshita, Y. et al. | 2013
- 37
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Direct stress measurement of Si(111) 7×7 reconstructionAsaoka, Hidehito / Yamazaki, Tatsuya / Yokoyama, Yuta / Yamaguchi, Kenji et al. | 2013
- 41
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As flux dependence on RHEED transients during InAs quantum dot growthShimomura, K. / Shirasaka, T. / Tex, D.M. / Kamiya, I. et al. | 2013
- 44
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In situ STM observations of step structures in a trench around an InAs QD at 300°CToujyou, T. / Otsu, T. / Wakamatsu, D. / Kurisaka, M. / Konishi, T. / Tsukamoto, S. et al. | 2013
- 47
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Mechanism of selective area growth of InP on Si(001) substrates using SiO2 mask by gas-source molecular beam epitaxyHasegawa, S. / Shimoi, T. / Asahi, H. et al. | 2013
- 50
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Incorporation of Mn atoms into the GaAs(110) surfaceHirayama, Motoi / Tsukamoto, Shiro et al. | 2013
- 53
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Self-assembly of Ga droplets attached to GaAs quantum dotsElborg, Martin / Noda, Takeshi / Mano, Takaaki / Jo, Masafumi / Sakuma, Yoshiki / Sakoda, Kazuaki et al. | 2013
- 57
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Photocapacitance study of MBE grown GaInNAsSb thin film solar cellsIslam, Muhammad Monirul / Miyashita, Naoya / Ahsan, Nazmul / Sakurai, Takeaki / Akimoto, Katsuhiro / Okada, Yoshitaka et al. | 2013
- 61
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Photoluminescence dynamics of excitons at the mini-Brillouin-zone edge in a GaAs/AlAs superlatticeNakayama, M. / Yamashita, T. / Hasegawa, T. et al. | 2013
- 65
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Effects of growth temperature and buffer scheme on characteristics of InP-based metamorphic InGaAs photodetectorsGu, Y. / Zhang, Y.G. / Wang, K. / Fang, X. / Li, C. / Zhou, L. / Li, A.Z. / Li, Hsby. et al. | 2013
- 69
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Optical properties of InAsSbN single quantum wells grown on InP substrates for 2-μm-wavelength regionShono, Takuya / Mizuta, Shogo / Kawamura, Yuichi et al. | 2013
- 73
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Quantitative estimation of density of Bi-induced localized states in GaAs1−xBix grown by molecular beam epitaxyYoshimoto, Masahiro / Itoh, Mizuki / Tominaga, Yoriko / Oe, Kunishige et al. | 2013
- 77
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Problems in low-temperature grown polycrystalline InAs layers on glass and their relief by inserting GaSbAs buffer layersKajikawa, Y. / Okuzako, T. / Matsui, Y. et al. | 2012
- 81
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Crystalline and electrical characteristics of C60 uniformly doped GaAs layersNishinaga, Jiro / Horikoshi, Yoshiji et al. | 2012
- 85
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Molecular beam epitaxy of ErGaAs alloys on GaAs (001) substratesJin, Ri Guo / Yagi, Shuhei / Hijikata, Yasuto / Kuboya, Shigeyuki / Onabe, Kentaro / Katayama, Ryuji / Yaguchi, Hiroyuki et al. | 2012
- 88
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MBE growth and characterization of (100) and (631)-oriented modulation doped AlGaAs/GaAs heterostructuresMendez-Garcia, V.H. / González-Fernández, J.V. / Espinosa-Vega, L.I. / Díaz, T. / Romano, R. / Rosendo, E. / Gallardo, S. / Vázquez-Cortes, D. / Shimomura, S. et al. | 2013
- 92
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Co-doping of InxGa1−xAs with silicon and tellurium for improved ultra-low contact resistanceLaw, J.J.M. / Carter, A.D. / Lee, S. / Huang, C.-Y. / Lu, H. / Rodwell, M.J.W. / Gossard, A.C. et al. | 2013
- 96
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Growth of dilute BGaP alloys by molecular beam epitaxyUrakami, N. / Fukami, F. / Sekiguchi, H. / Okada, H. / Wakahara, A. et al. | 2013
- 100
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Determination of surface electric potential by photoreflectance spectroscopy of HEMT heterostructuresZamora-Peredo, L. / Cortes-Mestizo, I.E. / García-González, L. / Hernández-Torres, J. / Vázquez-Cortes, D. / Shimomura, S. / Rosa, A. Cisneros-de la / Méndez-García, V.H. et al. | 2013
- 105
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Polarized Raman spectroscopy of corrugated MBE grown GaAs (6̄3̄1̄) homoepitaxial filmsEspinosa-Vega, L.I. / Rodriguez, A.G. / Cruz-Hernandez, E. / Martinez-Veliz, I. / Rojas-Ramirez, J. / Ramirez-Lopez, M. / Nieto-Navarro, J. / Lopez-Lopez, M. / Mendez-Garcia, V.H. et al. | 2013
- 109
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Heterointegration by molecular beam epitaxy: (In,Ga)As/GaAs quantum wells on GaAs, Ge, Ge/Si and Ge/Si pillarsRichter, M. / Uccelli, E. / Taboada, A.G. / Caimi, D. / Daix, N. / Sousa, M. / Marchiori, C. / Siegwart, H. / Falub, C.V. / von Känel, H. et al. | 2013
- 113
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Sb irradiation effect on growth of GaAs thin film on Si (111) substrateMorohara, Osamu / Geka, Hirotaka / Moriyasu, Yoshitaka / Kuze, Naohiro et al. | 2013
- 117
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Growth of heterostructures on InAs for high mobility device applicationsContreras-Guerrero, R. / Wang, S. / Edirisooriya, M. / Priyantha, W. / Rojas-Ramirez, J.S. / Bhuwalka, K. / Doornbos, G. / Holland, M. / Oxland, R. / Vellianitis, G. et al. | 2013
- 121
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Type-II InAs/GaSb superlattice grown on InP substrateMiura, K. / Iguchi, Y. / Kawamura, Y. et al. | 2013
- 125
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Semi-insulating InP:Fe for buried-heterostructure strain-compensated quantum-cascade lasers grown by gas-source molecular-beam epitaxySemtsiv, M.P. / Aleksandrova, A. / Elagin, M. / Monastyrskyi, G. / Kischkat, J.-F. / Flores, Y.V. / Masselink, W.T. et al. | 2013
- 129
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Study of Sb template for heteroepitaxial growth of GaSb thin film on Si(111)substrateToyota, H. / Okabe, A. / Endoh, T. / Jinbo, Y. / Uchitomi, N. et al. | 2013
- 134
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InGaAs/AlAs/InAlAs coupled double quantum wells for intersubband transition devices operating at 1550nmGozu, Shin-ichiro / Mozume, Teruo / Kuwatsuka, Haruhiko / Ishikawa, Hiroshi et al. | 2012
- 137
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Growth and characterization of GaDyN/GaN double barrierstructuresSano, M. / Zhou, Y.K. / Emura, S. / Hasegawa, S. / Asahi, H. et al. | 2013
- 141
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Growth of metamorphic InGaP layers on GaAs substratesYan, J.Y. / Gong, Q. / Yue, L. / Liu, Q.B. / Cheng, R.H. / Cao, C.F. / Wang, Y. / Wang, S.M. et al. | 2013
- 145
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A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxyLi, Hua / Liu, Shi / Cellek, Oray O. / Ding, Ding / Shen, Xiao-Meng / Steenbergen, Elizabeth H. / Fan, Jin / Lin, Zhiyuan / He, Zhao-Yu / Zhang, Qiang et al. | 2013
- 150
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Electroluminescence of GaNAs/GaAs MQWs p–i–n junctions grown by RF-MBE using modulated nitrogen radical beam sourceOhta, Natsumi / Arimoto, Kohei / Shiraga, Masahiro / Ishii, Kenta / Inada, Masatoshi / Yanai, Shunsuke / Nakai, Yuko / Akiyama, Hidefumi / Mochizuki, Toshimitsu / Takahashi, Toshio et al. | 2013
- 154
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Characteristics of CuGaSe2 layers grown on GaAs substratesFujita, Miki / Kawaharazuka, Atsushi / Horikoshi, Yoshiji et al. | 2013
- 158
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Growth mechanism of CuZnInSe2 thin films grown by molecular beam epitaxyTseng, Ya Hsin / Yang, Chu Shou / Wu, Chia Hsing / Chiu, Jai Wei / Yang, Min De / Wu, Chih-Hung et al. | 2012
- 162
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Characterization of Cu(In,Ga)Se2 grown by MBE by two-wavelength excited photoluminescence spectroscopyGupta, Amit / Hiraoka, Norimu / Sakurai, Takeaki / Yamada, Akimasa / Ishizuka, Shogo / Niki, Shigeru / Akimoto, Katsuhiro et al. | 2013
- 165
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Electronic and transport properties of Eu-substituted infinite-layer strontium ferrite thin filmsChikamatsu, Akira / Matsuyama, Toshiya / Katayama, Tsukasa / Hirose, Yasushi / Kumigashira, Hiroshi / Oshima, Masaharu / Fukumura, Tomoteru / Hasegawa, Tetsuya et al. | 2013
- 168
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Rock-salt Zn1−xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxyLu, C.-Y.J. / Yan, T. / Chang, L. / Ploog, K.H. / Chou, M.M.C. / Chiang, C.-M. et al. | 2012
- 172
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Epitaxial growth of nonpolar ZnO on MgO (100) substrate by molecular beam epitaxyLu, C.-Y.J. / Chang, L. / Ploog, K.H. / Chou, M.M.C. et al. | 2013
- 177
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Growth and application of epitaxial heterostructures with polymorphous rare-earth oxidesDargis, R. / Clark, A. / Arkun, E. / Roucka, R. / Smith, R. / Demkov, A.A. / Lebby, M. et al. | 2012
- 180
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Optical and electrical properties of ZnSeO alloys grown by plasma-assisted molecular beam epitaxyChen, Cheng-Yu / Yang, Cheng-Yu / Chyi, Jen-Inn / Wu, Chih-Hung et al. | 2013
- 184
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Multi-source MBE with high-precision rate control system as a synthesis method sui generis for multi-cation metal oxidesYamamoto, Hideki / Krockenberger, Yoshiharu / Naito, Michio et al. | 2012
- 189
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Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxyNakamura, K. / Toh, K. / Baba, M. / Ajmal Khan, M. / Du, W. / Toko, K. / Suemasu, T. et al. | 2013
- 193
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Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxyBaba, M. / Toh, K. / Toko, K. / Hara, K.O. / Usami, N. / Saito, N. / Yoshizawa, N. / Suemasu, T. et al. | 2013
- 198
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Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxyKoike, S. / Toh, K. / Baba, M. / Toko, K. / Hara, K.O. / Usami, N. / Saito, N. / Yoshizawa, N. / Suemasu, T. et al. | 2013
- 201
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Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cellsAjmal Khan, M. / Hara, Kosuke O. / Nakamura, Kotaro / Du, Weijie / Baba, Masakazu / Toh, Katsuaki / Suzuno, Mitsushi / Toko, Kaoru / Usami, Noritaka / Suemasu, Takashi et al. | 2013
- 205
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Rutherford backscattering studies of strain-relaxed SiGe films grown on Si substrate with compositionally graded buffer layersWatanabe, Yoshinori / Oshima, Ryuji / Sakata, Isao / Matsubara, Koji / Sakamoto, Isao et al. | 2013
- 208
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Thermal-activated carrier transfer in ZnCdO thin film grown by plasma-assisted molecular beam epitaxyChien, K.F. / Hsu, W.L. / Tzou, A.J. / Lin, Y.C. / Chou, W.C. / Lee, L. / Chia, C.H. / Yang, C.S. et al. | 2013
- 212
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Gas-source MBE growth of strain-relaxed Si1−xCx on Si(100) substratesArimoto, Keisuke / Sakai, Shoichiro / Furukawa, Hiroshi / Yamanaka, Junji / Nakagawa, Kiyokazu / Usami, Noritaka / Hoshi, Yusuke / Sawano, Kentarou / Shiraki, Yasuhiro et al. | 2013
- 218
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Optical properties of Zn1−xMnxO thin films grown by molecular beam epitaxyChien, K.F. / Yang, Y.L. / Tzou, A.J. / Chou, W.C. et al. | 2012
- 222
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Growth evolution and magneto-optical characteristics of self-assembled ZnTe/ZnMnSe quantum dotsLee, Ling / Fan, Wen-Chung / Chien, Kun-Feng / Tzou, An-Jye / Chou, Wu-Ching et al. | 2012
- 226
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High-quality SiGe films grown with compositionally graded buffer layers for solar cell applicationsOshima, Ryuji / Watanabe, Yoshinori / Yamanaka, Mitsuyuki / Kawanami, Hitoshi / Sakamoto, Isao / Matsubara, Koji / Sakata, Isao et al. | 2013
- 230
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Change of Si(110) reconstructed structure by Ge nanocluster formationYokoyama, Yuta / Yamazaki, Tatsuya / Asaoka, Hidehito et al. | 2012
- 233
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Growth of II–VI ZnSe/CdSe nanowires for quantum dot luminescenceBellet-Amalric, E. / Elouneg-Jamroz, M. / Rueda-Fonseca, P. / Bounouar, S. / Hertog, M. Den / Bougerol, C. / André, R. / Genuist, Y. / Poizat, J.P. / Kheng, K. et al. | 2012
- 238
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Interface properties of MBE grown epitaxial oxides on GaAsContreras-Guerrero, R. / Edirisooriya, M. / Noriega, O.C. / Droopad, R. et al. | 2013
- 243
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Solid phase epitaxy of EuTiO3 thin films on SrTiO3 (100) substrates with different oxygen contentsShimamoto, K. / Hirose, Y. / Nakao, S. / Fukumura, T. / Hasegawa, T. et al. | 2013
- 246
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Effects of different substrate surface modifications on the epitaxial ZnO/SiWang, Peng / Jin, Changlian / Zhan, Huahan / Chen, Xiaohang / Xu, Fuchun / Zhou, Yinghui / Wang, Huiqiong / Kang, Junyong et al. | 2013
- 251
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On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation techniqueSawano, K. / Hoshi, Y. / Nagakura, S. / Arimoto, K. / Nakagawa, K. / Usami, N. / Shiraki, Y. et al. | 2013
- 254
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Strain relaxation of thin Ge films on Si(001) grown by carbon-mediated epitaxyTetzlaff, D. / Wietler, T.F. / Bugiel, E. / Osten, H.J. et al. | 2013
- 259
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Molecular beam epitaxial growth of ZnCdTeO epilayers for intermediate band solar cellsTanaka, Tooru / Nagao, Yasuhiro / Mochinaga, Tomohiro / Saito, Katsuhiko / Guo, Qixin / Nishio, Mitsuhiro / Yu, Kin M. / Walukiewicz, Wladek et al. | 2013
- 263
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Proposal of BeZnTe/ZnSeTe superlattice quasi-quaternaries on InP substrates for yellow/green light emitting devicesKobayashi, Toshiki / Nomura, Ichirou / Murakami, Keisuke / Kishino, Katsumi et al. | 2013
- 266
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MBE growth and characterization of a II–VI distributed Bragg reflector and microcavity lattice-matched to MgTeRousset, J.-G. / Kobak, J. / Slupinski, T. / Jakubczyk, T. / Stawicki, P. / Janik, E. / Tokarczyk, M. / Kowalski, G. / Nawrocki, M. / Pacuski, W. et al. | 2013
- 270
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On the structural properties of MgS-rich II–VI-based microcavitiesKlembt, Sebastian / Frank, Kristian / Qian, Gang / Klein, Thorsten / Rosenauer, Andreas / Hommel, Detlef / Kruse, Carsten et al. | 2012
- 274
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Ultra low density of CdTe quantum dots grown by MBEKobak, J. / Rousset, J.-G. / Rudniewski, R. / Janik, E. / Slupinski, T. / Kossacki, P. / Golnik, A. / Pacuski, W. et al. | 2013
- 278
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MBE fabrication of III-N-based laser diodes and its development to industrial systemSkierbiszewski, C. / Siekacz, M. / Turski, H. / Muziol, G. / Sawicka, M. / Perlin, P. / Wasilewski, Z.R. / Porowski, S. et al. | 2013
- 283
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Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxyAgrawal, M. / Dharmarasu, N. / Radhakrishnan, K. / Ravikiran, L. et al. | 2013
- 287
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Cubic GaN quantum dots embedded in zinc-blende AlN microdisksBürger, M. / Kemper, R.M. / Bader, C.A. / Ruth, M. / Declair, S. / Meier, C. / Förstner, J. / As, D.J. et al. | 2012
- 291
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Growth of cubic GaN on 3C–SiC/Si (001) nanostructuresKemper, R.M. / Hiller, L. / Stauden, T. / Pezoldt, J. / Duschik, K. / Niendorf, T. / Maier, H.J. / Meertens, D. / Tillmann, K. / As, D.J. et al. | 2012
- 295
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Study of the pseudo-(1×1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBECruz-Hernández, E. / Ramirez-Lopez, M. / Pérez-Caro, M. / Mani-Gonzalez, P.G. / Herrera-Gómez, A. / Gorbatchev, A. Yu / López-López, M. / Méndez-García, V.H. et al. | 2013
- 299
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Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)Peta, Koteswara Rao / Lee, Sang-Tae / Moon-Deock, Kim / Oh, Jae-Eung / Kim, Song-Gang / Kim, Tae-Geun et al. | 2013
- 303
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Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxyNaritsuka, S. / Lin, C.H. / Uchiyama, S. / Maruyama, T. et al. | 2012
- 307
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RF-MBE growth of cubic AlN on MgO (001) substrates via 2-step c-GaN buffer layerKakuda, M. / Morikawa, S. / Kuboya, S. / Katayama, R. / Yaguchi, H. / Onabe, K. et al. | 2013
- 310
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Photoluminescence properties in GaGdN grown on GaN(0001) by PA-MBEHigashi, K. / Hasegawa, S. / Sano, S. / Zhou, Y.K. / Asahi, H. et al. | 2013
- 314
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Growth parameter dependence of structural, electrical and magnetic properties in GaGdN layers grown on GaN(0001)Sano, S. / Hasegawa, S. / Mitsuno, Y. / Higashi, K. / Ishimaru, M. / Sakurai, T. / Ohta, H. / Asahi, H. et al. | 2013
- 319
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Control of threading dislocation density at the initial growth stage of AlN on c-sapphire in plasma-assisted MBENechaev, D.V. / Aseev, P.A. / Jmerik, V.N. / Brunkov, P.N. / Kuznetsova, Y.V. / Sitnikova, A.A. / Ratnikov, V.V. / Ivanov, S.V. et al. | 2013
- 323
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Molecular beam epitaxy growth of InSb1−xBix thin filmsSong, Yuxin / Wang, Shumin / Saha Roy, Ivy / Shi, Peixiong / Hallen, Anders / Lai, Zonghe et al. | 2013
- 329
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Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layersMohamed, Mohd Ambri / Lam, Pham Tien / Otsuka, N. et al. | 2013
- 333
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Graphene films grown at low substrate temperature and the growth model by using MBE techniqueLin, Meng-Yu / Guo, Wei-Ching / Wu, Meng-Hsun / Wang, Pro-Yao / Lee, Si-Chen / Lin, Shih-Yen et al. | 2013
- 337
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Coexistence of magnetic domains with in-plane and out-of-plane anisotropy in a single GaMnAs filmLee, Sangyeop / Lee, Hakjoon / Yoo, Taehee / Lee, Sanghoon / Liu, X. / Furdyna, J.K. et al. | 2012
- 342
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Epitaxial growth of ferromagnetic CoxFe4−xN thin films on SrTiO3 (001) and magneticpropertiesSanai, Tatsunori / Ito, Keita / Toko, Kaoru / Suemasu, Takashi et al. | 2013
- 347
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Growth of pentacene crystallinity control layers for high mobility organic field-effect transistors based on benzodithiophene-dimer filmsSakai, Tomoya / Matsumoto, Y. / Shibamoto, K. / Osuga, H. / Uno, K. / Tanaka, Ichiro et al. | 2013
- 351
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Crystal growth of magnetic dihydride GdxY1−xH2 for generation of spin currentSakuraba, T. / Hirama, H. / Sakai, M. / Honda, Z. / Hayakawa, M. / Okoshi, T. / Kitajima, A. / Oshima, A. / Higuchi, K. / Hasegawa, S. et al. | 2013
- 356
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Enhancement of hydrogen uptake for Y and Gd films by thin Ni surface overlayersHirama, H. / Hayakawa, M. / Okoshi, T. / Sakai, M. / Higuchi, K. / Kitajima, A. / Oshima, A. / Hasegawa, S. et al. | 2013
- 361
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Planar Hall effect in a single GaMnAs film grown on Si substrateWon, Jaehyuk / Shin, Jinsik / Lee, Sangyeop / Lee, Hakjoon / Yoo, Taehee / Lee, Sanghoon / Liu, X. / Furdyna, J.K. et al. | 2012
- 365
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Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxyFunase, Y. / Suzuno, M. / Toko, K. / Suemasu, T. et al. | 2013
- 368
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Fabrication and characterization of DH-α6T monolayer film on silicon dioxideYe, Rongbin / Fujinaka, Yusuke / Ohata, Koji / Baba, Mamoru et al. | 2013
- 372
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Growth of high-quality CuCl thin films by a technique involving electron-beam irradiationIchimiya, Masayoshi / Le Quang, Phuong / Ashida, Masaaki / Itoh, Tadashi et al. | 2013
- 376
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Growth condition dependence of Ge-doped β-FeSi2 epitaxial film by molecular beam epitaxyNoda, Keiichi / Terai, Yoshikazu / Fujiwara, Yasufumi et al. | 2012
- 381
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Control of magnetic anisotropy in (Ga,Mn)As with etching depth of specimen boundariesHashimoto, Y. / Iye, Y. / Katsumoto, S. et al. | 2012
- 385
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Spin-injection into epitaxial graphene on silicon carbideKonishi, Keita / Cui, Zhixin / Hiraki, Takahiro / Yoh, Kanji et al. | 2013
- 388
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Influence of hydrogen incorporation on texture and grain size in YH2 filmsOkoshi, T. / Hayakawa, M. / Hirama, H. / Sakai, M. / Higuchi, K. / Kitajima, A. / Oshima, A. / Hasegawa, S. et al. | 2013
- 393
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Dynamics of electron-spin injection in a heterovalent GaAs/AlGaAs/ZnMnSe structure with a coupled double quantum well of GaAs/AlGaAsKuno, Y. / Sasaki, T. / Kiba, T. / Kaibyshev, V.Kh. / Liaci, F. / Toropov, A.A. / Ivanov, S.V. / Murayama, A. et al. | 2013
- 397
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STM observation of MnAs initial growth surface on GaAs(001)-c(4×4)α and 6×6 reconstructionsHiraoka, Masahiro / Kaku, Shigeru / Yoshino, Junji et al. | 2013
- 400
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Suppression of Andreev current due to transverse current flow in an InAs two-dimensional electronsTakahashi, Y. / Hashimoto, Y. / Iye, Y. / Katsumoto, S. et al. | 2013
- 404
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Molecular beam epitaxial growth of graphene using cracked ethyleneMaeda, Fumihiko / Hibino, Hiroki et al. | 2013
- 410
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Studies of zinc-blende type MnAs thin films grown on InP(001) substrates by XRDOomae, H. / Irizawa, S. / Jinbo, Y. / Toyota, H. / Kambayashi, T. / Uchitomi, N. et al. | 2013
- 415
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Effect of Ag-doped bathocuproine on the recombination properties of exciton in fullereneWang, Shenghao / Sakurai, Takeaki / Komatsu, Keiichirou / Akimoto, Katsuhiro et al. | 2013
- 418
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Thickness dependence of magnetic anisotropy in MnSb epitaxial layersNishizawa, Nozomi / Munekata, Hiro et al. | 2012
- 422
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Wideband luminescence of high-density InAs quantum dots on GaAsSb/GaAs layersOsaka, Yuji / Tanabe, Hiroyuki / Yamada, Kazuhiro / Yamaguchi, Koichi et al. | 2012
- 426
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Temperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum ringsLin, Wei-Hsun / Wang, Kai-Wei / Lin, Shih-Yen / Wu, Meng-Chyi et al. | 2013
- 430
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In(Ga)As quantum dots on InGaP layers grown by solid-source molecular beam epitaxySugaya, T. / Oshima, R. / Matsubara, K. / Niki, S. et al. | 2013
- 435
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InGaAs quantum-dot-in-ring structure by droplet epitaxyBoonpeng, P. / Kiravittaya, S. / Thainoi, S. / Panyakeow, S. / Ratanathammaphan, S. et al. | 2013
- 439
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Optical and structural studies of highly uniform Ge quantum dots on Si (001) substrate grown by solid-source molecular beam epitaxyGotoh, Kazuhiro / Oshima, Ryuji / Sugaya, Takeyoshi / Sakata, Isao / Matsubara, Koji / Kondo, Michio et al. | 2013
- 442
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Structural properties of ultra-low density nanoholes for the generation of well-separated GaAs quantum dotsSonnenberg, D. / Graf, A. / Paulava, V. / Hansen, W. / Heyn, Ch. et al. | 2012
- 446
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GaAs nanopillars by self-assembled droplet etchingHeyn, Ch. / Sonnenberg, D. / Bartsch, Th. / Wetzel, A. / Kerbst, J. / Hansen, W. et al. | 2012
- 450
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Fabrication of low-density self-assembled InAs quantum dots on InP(311)B substrate by molecular beam epitaxyAkahane, Kouichi / Yamamoto, Naokatsu et al. | 2013
- 454
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RF-MBE growth of cubic InN nano-scale dots on cubic GaNSuzuki, Junichiro / Orihara, Misao / Yagi, Shuhei / Hijikata, Yasuto / Yaguchi, Hiroyuki et al. | 2013
- 459
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Molecular beam epitaxial growths of high-optical-gain InAs quantum dots on GaAs for long-wavelength emissionNishi, K. / Kageyama, T. / Yamaguchi, M. / Maeda, Y. / Takemasa, K. / Yamamoto, T. / Sugawara, M. / Arakawa, Y. et al. | 2012
- 463
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Observation of optical anisotropy of highly uniform InAs quantum dotsUemura, M. / Ohta, J. / Yamaguchi, R. / Yamaguchi, K. / Tackeuchi, A. et al. | 2013
- 466
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The study of self-assembled ZnO nanorods grown on Si(111) by plasma-assisted molecular beam epitaxyTzou, A.J. / Chien, K.F. / Lai, H.Y. / Ku, J.T. / Lee, L. / Fan, W.C. / Chou, W.C. et al. | 2013
- 470
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Temperature dependence of photoluminescence for site-controlled InAs/GaAs quantum dot chainsHakkarainen, T.V. / Schramm, A. / Luna, E. / Tommila, J. / Guina, M. et al. | 2013
- 475
-
Growth of GaSb quantum dots on GaAs (311)AKawazu, Takuya / Noda, Takeshi / Mano, Takaaki / Sakuma, Yoshiki / Sakaki, Hiroyuki et al. | 2012
- 480
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Selective area growth of InAs nanostructures on faceted GaAs microstructures by migration enhancedepitaxyZander, M. / Nishinaga, J. / Horikoshi, Y. et al. | 2013
- 485
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Ultrafast photocarrier relaxation processes in Er-doped InAs quantum dots embedded in strain-relaxed InGaAs barriersKitada, Takahiro / Ueyama, Hyuga / Morita, Ken / Isu, Toshiro et al. | 2012
- 489
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Self-organization and photoluminescence properties of Pb0.7Sn0.3Te quantum dots embedded in a CdTe matrixKoike, Kazuto / Iwamoto, Atsushi / Yano, Mitsuaki et al. | 2013
- 493
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Surface/interface-related optical properties in Si nanodisks fabricated by neutral-beam etching using bio-templatesKiba, Takayuki / Suzaki, Kenta / Li, Hao / Igarashi, Makoto / Samukawa, Seiji / Murayama, Akihiro et al. | 2013
- 497
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Effects of As pressure on the quality of GaAs/AlGaAs quantum dots grown on silicon by droplet epitaxyBietti, S. / Cavigli, L. / Minari, S. / Adorno, S. / Isella, G. / Vinattieri, A. / Gurioli, M. / Sanguinetti, S. et al. | 2013
- 501
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Growth of InAs/GaAs quantum dots with central emission wavelength of 1.05μm using In-flush technique for broadband near-infrared light sourceHino, Yuji / Ozaki, Nobuhiko / Ohkouchi, Shunsuke / Ikeda, Naoki / Sugimoto, Yoshimasa et al. | 2013
- 506
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Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowiresRieger, Torsten / Lepsa, Mihail Ion / Schäpers, Thomas / Grützmacher, Detlev et al. | 2012
- 511
-
Fabrication and characterization of a δ-dope InAs/InP core shell nanowire transistorCui, Zhixin / Ishikura, Tomotsugu / Jabeen, Fauzia / Harmand, J.-C. / Yoh, Kanji et al. | 2013
- 515
-
Annealing induced anisotropy in GaAs/AlGaAs quantum dots grown by droplet epitaxyAdorno, S. / Bietti, S. / Sanguinetti, S. et al. | 2012
- 519
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InP1−xAsx quantum dots in InP nanowires: A route for single photon emittersHarmand, Jean-Christophe / Jabeen, Fauzia / Liu, Linsheng / Patriarche, Gilles / Gauthron, Karine / Senellart, Pascale / Elvira, David / Beveratos, Alexios et al. | 2013
- 524
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Polarization anisotropy of stacked InAs quantum dots on InGaAs/GaAs cross-hatch patternsChokamnuai, T. / Rattanadon, P. / Thainoi, S. / Panyakeow, S. / Kanjanachuchai, S. et al. | 2013
- 529
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Fabrication of InAs nanoscale rings by droplet epitaxyNoda, T. / Jo, M. / Mano, T. / Kawazu, T. / Sakaki, H. et al. | 2012
- 532
-
Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxyDheeraj, D.L. / Munshi, A.M. / Christoffersen, O.M. / Kim, D.C. / Signorello, G. / Riel, H. / van Helvoort, A.T.J. / Weman, H. / Fimland, B.O. et al. | 2013
- 537
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Infrared emitting property and spherical symmetry of colloidal PbS quantum dotsNakashima, Seisuke / Kikushima, Kosuke / Mukai, Kohki et al. | 2013
- 542
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Thiol-stabilized PbS quantum dots with stable luminescence in the infrared spectral rangeNakashima, Seisuke / Hoshino, Ai / Cai, Junjiang / Mukai, Kohki et al. | 2013
- 546
-
Phase coherent transport in GaAs/AlGaAs core–shellnanowiresLucot, Damien / Jabeen, Fauzia / Ramdani, Mohammed R. / Patriarche, Gilles / Faini, Giancarlo / Mailly, Dominique / Harmand, Jean-Christophe et al. | 2013
- 549
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Shape evolution of low density InAs quantum dots in the partial capping process by using As2 sourceOhkouchi, Shunsuke / Kumagai, Naoto / Watanabe, Katsuyuki / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2013
- 553
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Extending emission wavelength of InAs/GaAs quantum dots beyond 1.3μm by using quantum dot bi-layer for broadband light sourceOzaki, N. / Nakatani, Y. / Ohkouchi, S. / Ikeda, N. / Sugimoto, Y. / Asakawa, K. / Clarke, E. / Hogg, R.A. et al. | 2013
- 558
-
Rim formation on non-elongated InAs quantum dots grown by partial cap and annealing process at low temperatureKumagai, Naoto / Ohkouchi, Shunsuke / Watanabe, Katsuyuki / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2013
- 562
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Non-VLS growth of GaAs nanowires on silicon by a gallium pre-deposition techniqueKwoen, Jinkwan / Watanabe, Katsuyuki / Iwamoto, Satoshi / Arakawa, Yasuhiko et al. | 2013
- 566
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InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxyBanerjee, Animesh / Frost, Thomas / Jahangir, Shafat / Stark, Ethan / Bhattacharya, Pallab et al. | 2013
- 571
-
Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperatureLin, Wei-Hsun / Wang, Kai-Wei / Lin, Shih-Yen / Wu, Meng-Chyi et al. | 2012
- 576
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InGaP solar cells fabricated using solid-source molecular beam epitaxySugaya, T. / Takeda, A. / Oshima, R. / Matsubara, K. / Niki, S. / Okano, Y. et al. | 2012
- 579
-
Performance of gas source MBE grown InAlGaAs photovoltaic detectors tailored to 1.4μmZhou, L. / Gu, Y. / Zhang, Y.G. / Wang, K. / Fang, X. / Cao, Y.Y. / Li, A.Z. / Li, Hsby. et al. | 2013
- 583
-
Broadband InGaAs quantum dot-in-a-well solar cells of p-type wellsTzeng, T.E. / Chuang, K.Y. / Lay, T.S. / Chang, C.H. et al. | 2013
- 587
-
The effects of injector doping densities on lasing properties of InP-based quantum cascade lasers at 4.3μmLi, Y.Y. / Li, A.Z. / Gu, Y. / Zhang, Y.G. / Li, H.S.B.Y. / Wang, K. / Fang, X. et al. | 2013
- 591
-
MBE grown Ga2O3 and its power device applicationsSasaki, Kohei / Higashiwaki, Masataka / Kuramata, Akito / Masui, Takekazu / Yamakoshi, Shigenobu et al. | 2013
- 596
-
InAs/GaSb type-II superlattice mid-wavelength infrared focal plane array detectors grown by molecular beam epitaxyChen, Jianxin / Zhou, Yi / Xu, Zhicheng / Xu, Jiajia / Xu, Qingqing / Chen, Honglei / He, Li et al. | 2013
- 600
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High-performance AlGaN/GaN High-electron-mobility transistors employing H2O annealingAhn, Woojin / Seok, Ogyun / Song, Seung Min / Han, Min-Koo / Ha, Min-Woo et al. | 2013
- 604
-
The investigation of GaInP solar cell grown by all-solid MBEDai, P. / Lu, S.L. / Zhu, Y.Q. / Ji, L. / He, W. / Tan, M. / Yang, H. / Arimochi, M. / Yoshida, H. / Uchida, S. et al. | 2012
- 607
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Highly strained photovoltaic dual-channel intersubband photodetectors grown by gas-source MBEElagin, Mikaela / Schulz, P. / Elagin, Mstislav / Semtsiv, M.P. / Kirmse, H. / Mogilatenko, A. / Masselink, W.T. et al. | 2013
- 611
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Uncooled InGaSb photovoltaic infrared detectors for gas sensingKatsumata, Takashi / Nishimura, Ryosuke / Yamaoka, Keisuke / Camargo, Edson Gomes / Morishita, Tomohiro / Ueno, Koichiro / Tokuo, Seiichi / Goto, Hiromasa / Kuze, Naohiro et al. | 2013
- 614
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Correlation of the MBE growth temperature, material quality, and performance of quantum cascade lasersMonastyrskyi, G. / Aleksandrova, A. / Elagin, M. / Semtsiv, M.P. / Masselink, W.T. / Bryksa, V. et al. | 2012
- 618
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InP/InGaAs/InP DHBT structures with high carbon-doped base grown by gas source molecular beam epitaxyTeng, Teng / Xu, Anhuai / Ai, Likun / Sun, Hao / Qi, Ming et al. | 2013
- 622
-
Microdisk cavity laser with InGaAs quantum dots on AlAs/GaAs distributed Bragg reflectorHsing, J.Y. / Tzeng, T.E. / Kuo, M.Y. / Lay, T.S. / Shih, M.H. et al. | 2013
- 627
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Growth of high-density 1.06-μm InGaAs/GaAs quantum dots for high gain lasers by molecular beamepitaxyWatanabe, Katsuyuki / Akiyama, Tomoyuki / Yokoyama, Yoshitaka / Takemasa, Keizo / Nishi, Kenichi / Tanaka, Yu / Sugawara, Mitsuru / Arakawa, Yasuhiko et al. | 2013
- 631
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All in-situ GaSb MOS structures on GaAs (001): Growth, passivation and high-k oxidesTokranov, V. / Madisetti, S. / Yakimov, M. / Nagaiah, P. / Faleev, N. / Oktyabrsky, S. et al. | 2013
- 636
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Enhancement of light emission from Ge quantum dots by photonic crystal nanocavities at room-temperatureXu, Xuejun / Usami, Noritaka / Maruizumi, Takuya / Shiraki, Yasuhiro et al. | 2012
- IFC
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Editorial Board| 2013
- iii
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Contents| 2013