Optoelectronics, Displays, and Imaging - Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs (English)
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In:
IEEE transactions on electron devices
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61
, 2
; 511-517
;
2014
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ISSN:
- Article (Journal) / Print
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Title:Optoelectronics, Displays, and Imaging - Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs
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Published in:IEEE transactions on electron devices ; 61, 2 ; 511-517
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Place of publication:New York, NY
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Publication date:2014
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 61, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 217
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Table of contents| 2014
- 220
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A warm welcome to a new T-ED EditorCressler, John D. et al. | 2014
- 220
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SPECIAL ISSUE ON COMPACT MODELING OF EMERGING DEVICES - EDITORIAL - A Warm Welcome to a New T-ED EditorCressler, J D et al. | 2014
- 221
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Foreword Special Issue on Compact Modeling of Emerging DevicesZhou, Xing / Deen, M. Jamal / Iniguez, Benjamin / Enz, Christian C. / Rios, Rafael et al. | 2014
- 221
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GUEST EDITORIAL - Foreword Special Issue on Compact Modeling of Emerging DevicesZhou, X et al. | 2014
- 225
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SPECIAL ISSUE PAPERS - Compact Models and the Physics of Nanoscale FETs (Invited Paper)Lundstrom, M S et al. | 2014
- 225
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Compact Models and the Physics of Nanoscale FETsLundstrom, Mark S. / Antoniadis, Dimitri A. et al. | 2014
- 234
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BSIM6: Analog and RF Compact Model for Bulk MOSFET (Invited Paper)Chauhan, Y S et al. | 2014
- 234
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BSIM6: Analog and RF Compact Model for Bulk MOSFETChauhan, Yogesh Singh / Venugopalan, Sriramkumar / Chalkiadaki, Maria-Anna / Karim, Muhammed Ahosan Ul / Agarwal, Harshit / Khandelwal, Sourabh / Paydavosi, Navid / Duarte, Juan Pablo / Enz, Christian C. / Niknejad, Ali M. et al. | 2014
- 245
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RF-Noise Modeling in Advanced CMOS TechnologiesSmit, Geert D. J. / Scholten, Andries J. / Pijper, Ralf M. T. / Tiemeijer, Luuk F. / van der Toorn, Ramses / Klaassen, Dirk B. M. et al. | 2014
- 245
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RF-Noise Modeling in Advanced CMOS Technologies (Invited Paper)Smit, G D J et al. | 2014
- 255
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Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX LayersMiura-Mattausch, Mitiko / Feldmann, Uwe / Fukunaga, Yukiya / Miyake, Masataka / Kikuchihara, Hideyuki / Ueno, Fumiya / Mattausch, Hans Jurgen / Nakagawa, Tadashi / Sugii, Nobuyuki et al. | 2014
- 255
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Compact Modeling of SOI MOSFETs With Ultrathin Silicon and BOX Layers (Invited Paper)Miura-Mattausch, M et al. | 2014
- 266
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Compact Modeling and Contact Effects in Thin Film Transistors (Invited Paper)Tejada, J A J et al. | 2014
- 266
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Compact Modeling and Contact Effects in Thin Film TransistorsTejada, Juan Antonio Jimenez / Villanueva, Juan Antonio Lopez / Varo, Pilar Lopez / Awawdeh, Karam M. / Deen, M. Jamal et al. | 2014
- 278
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Compact DC Modeling of Organic Field-Effect Transistors: Review and PerspectivesKim, Chang-Hyun / Bonnassieux, Yvan / Horowitz, Gilles et al. | 2014
- 288
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Compact Model for Short-Channel Junctionless Accumulation Mode Double Gate MOSFETsHoltij, Thomas / Graef, Michael / Hain, Franziska Marie / Kloes, Alexander / Iniguez, Benjamn et al. | 2014
- 300
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SPICE Modeling of Double-Gate Tunnel-FETs Including Channel TransportsZhang, Lining / Chan, Mansun et al. | 2014
- 308
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Compact Model for Ultrathin Low Electron Effective Mass Double Gate MOSFETRoy, Ananda S. / Mudanai, Sivakumar P. / Basu, Dipanjan / Stettler, Mark A. et al. | 2014
- 314
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A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density ExpressionZhang, Junbin / Syamal, Binit / Zhou, Xing / Arulkumaran, Subramaniam / Ng, Geok Ing et al. | 2014
- 324
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Compact Modeling of Nanoscale Trapezoidal FinFETsFasarakis, Nikolaos / Karatsori, Theano A. / Tsormpatzoglou, Andreas / Tassis, Dimitrios H. / Papathanasiou, Konstantinos / Bucher, Matthias / Ghibaudo, Gerard / Dimitriadis, Charalabos A. et al. | 2014
- 333
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Floating-Body Effect in Partially/Dynamically/Fully Depleted DG/SOI MOSFETs Based on Unified Regional Modeling of Surface and Body PotentialsChiah, Siau Ben / Zhou, Xing et al. | 2014
- 342
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Modeling of Distance-Dependent Mismatch and Across-Chip Variations in Semiconductor DevicesLu, Ning et al. | 2014
- 351
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Analysis of Carrier Transport in Short-Channel MOSFETsMajumdar, Amlan / Antoniadis, Dimitri A. et al. | 2014
- 351
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Silicon and Column IV Semiconductors Devices - Analysis of Carrier Transport in Short-Channel MOSFETsMajumdar, A et al. | 2014
- 359
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Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using H2 and D2 AnnealsVandooren, A et al. | 2014
- 359
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Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using ${\rm H}_{2}$ and ${\rm D}_{2}$ AnnealsVandooren, Anne / Walke, Amey M. / Verhulst, Anne S. / Rooyackers, Rita / Collaert, Nadine / Thean, Aaron V. Y. et al. | 2014
- 359
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Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using Formula Not Shown and Formula Not Shown AnnealsVandooren, A. / Walke, A. M. / Verhulst, A. S. / Rooyackers, R. / Collaert, N. / Thean, A. V. et al. | 2014
- 365
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- 372
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Modeling of Thermoelectric Effects in Phase Change Memory CellsFaraclas, Azer / Bakan, Gokhan / Adnane, L'Hacene / Dirisaglik, Faruk / Williams, Nicholas E. / Gokirmak, Ali / Silva, Helena et al. | 2014
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Impacts of 3-D Integration Processes on Memory Retention Characteristics in Thinned DRAM Chip for High-Reliable 3-D DRAMLee, Kang-Wook / Tanikawa, Seiya / Murugesan, Mariappan / Naganuma, Hideki / Bea, Ji-Choel / Fukushima, Takafumi / Tanaka, Tetsu / Koyanagi, Mitsumasa et al. | 2014
- 386
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Discrete Dopant Impurity Scattering in $p$ -Channel Silicon Nanowire Transistors: A $k.p$ ApproachAkhavan, Nima Dehdashti / Jolley, Gregory / Umana-Membreno, Gilberto Antonio / Antoszewski, Jarek / Faraone, Lorenzo et al. | 2014
- 386
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Discrete Dopant Impurity Scattering in Formula Not Shown -Channel Silicon Nanowire Transistors: A Formula Not Shown ApproachAkhavan, N. D. / Jolley, G. / Umana-Membreno, G. A. / Antoszewski, J. / Faraone, L. et al. | 2014
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Effect of Temperature Variation and Packaging on SOI MEMS Inductor With DRIE Trench on Low-Resistivity SubstrateBhattacharya, A. / Bhattacharyya, T. K. et al. | 2014
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A Detailed Study of Gate Insulator Process Dependence of NBTI Using a Compact ModelJoshi, Kaustubh / Mukhopadhyay, Subhadeep / Goel, Nilesh / Nanware, Nirmal / Mahapatra, Souvik et al. | 2014
- 416
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Impact of Plasma Postoxidation Temperature on the Electrical Properties of Al2O3/GeOx/Ge pMOSFETs and nMOSFETsZhang, R et al. | 2014
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Impact of Plasma Postoxidation Temperature on the Electrical Properties of Formula Not Shown pMOSFETs and nMOSFETsZhang, R. / Lin, J. C. / Yu, X. / Takenaka, M. / Takagi, S. et al. | 2014
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Impact of Plasma Postoxidation Temperature on the Electrical Properties of ${\rm Al}_{2}{\rm O}_{3}/{\rm GeO}_{x}/{\rm Ge}$ pMOSFETs and nMOSFETsZhang, Rui / Lin, Ju-Chin / Yu, Xiao / Takenaka, Mitsuru / Takagi, Shinichi et al. | 2014
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Quantum Corrections Based on the 2-D Schrödinger Equation for 3-D Finite Element Monte Carlo Simulations of Nanoscaled FinFETsLindberg, Jari / Aldegunde, Manuel / Nagy, Daniel / Dettmer, Wulf G. / Kalna, Karol / Garcia-Loureiro, Antonio Jesus / Peric, Djordje et al. | 2014
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Germanium p-Channel FinFET Fabricated by Aspect Ratio Trappingvan Dal, Mark J. H. / Vellianitis, Georgios / Duriez, Blandine / Doornbos, Gerben / Hsieh, Chih-Hua / Lee, Bi-Hui / Yin, Kai-Min / Passlack, Matthias / Diaz, Carlos H. et al. | 2014
- 437
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Compound Semiconductor Devices - Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTsGao, F et al. | 2014
- 437
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Impact of Water-Assisted Electrochemical Reactions on the OFF-State Degradation of AlGaN/GaN HEMTsGao, Feng / Tan, Swee Ching / del Alamo, Jesus A. / Thompson, Carl V. / Palacios, Tomas et al. | 2014
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An Unconventional Hybrid Variable Capacitor With a 2-D Electron GasDianat, Pouya / Prusak, Richard / Persano, Anna / Cola, Adriano / Quaranta, Fabio / Nabet, Bahram et al. | 2014
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Intrinsic Performance of InAs Nanowire CapacitorsJansson, Kristofer / Lind, Erik / Wernersson, Lars-Erik et al. | 2014
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Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap LayerSu, Liang-Yu / Lee, Finella / Huang, Jian Jang et al. | 2014
- 466
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Random Dopant, Line-Edge Roughness, and Gate Workfunction Variability in a Nano InGaAs FinFETSeoane, Natalia / Indalecio, Guillermo / Comesana, Enrique / Aldegunde, Manuel / Garcia-Loureiro, Antonio J. / Kalna, Karol et al. | 2014
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TFET Inverters With n-/p-Devices on the Same Technology Platform for Low-Voltage/Low-Power ApplicationsBaravelli, Emanuele / Gnani, Elena / Gnudi, Antonio / Reggiani, Susanna / Baccarani, Giorgio et al. | 2014
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High-Speed and Low-Power Ultradeep-Submicrometer III-V Heterojunctionless Tunnel Field-Effect TransistorAsthana, Pranav Kumar / Ghosh, Bahniman / Goswami, Yogesh / Tripathi, Ball Mukund Mani et al. | 2014
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Characterization of GaN MOSFETs on AlGaN/GaN Heterostructure With Variation in Channel DimensionsWang, Qingpeng / Jiang, Ying / Li, Liuan / Wang, Dejun / Ohno, Yasuo / Ao, Jin-Ping et al. | 2014
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Memory Devices and Technology - Three-Terminal Nonvolatile Resistive-Change Device Integrated in Cu-BEOLTada, M et al. | 2014
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Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDsLi, Chi-Kang / Rosmeulen, Maarten / Simoen, Eddy / Wu, Yuh-Renn et al. | 2014
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Optoelectronics, Displays, and Imaging - Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDsLi, C-K et al. | 2014
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Solid-State Power and High Voltage Devices - A Novel Vertical Field Plate Lateral Device With Ultralow Specific On-ResistanceZhang, W et al. | 2014
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A Novel Vertical Field Plate Lateral Device With Ultralow Specific On-ResistanceZhang, Wentong / Zhang, Bo / Qiao, Ming / Wu, Lijuan / Mao, Kun / Li, Zhaoji et al. | 2014
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Reconfigured-Wafer-to-Wafer 3-D Integration Using Parallel Self-Assembly of Chips With Cu–SnAg Microbumps and a Nonconductive FilmFukushima, Takafumi / Bea, Jichoel / Kino, Hisashi / Nagai, Chisato / Murugesan, Mariappan / Hashiguchi, Hideto / Lee, Kang-Wook / Tanaka, Tetsu / Koyanagi, Mitsumasa et al. | 2014
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Thermal Rectifier Based on p-n JunctionKislitsyn, Viktor / Pavliuk, Sergiy / Soltys, Roman / Lozovski, Valeri / Strilchuk, Galyna et al. | 2014
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Electrical Noise in Heterojunction Interband Tunnel FETsPandey, Rahul / Rajamohanan, Bijesh / Liu, Huichu / Narayanan, Vijaykrishnan / Datta, Suman et al. | 2014
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Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling DevicesHuang, Jun Z. / Zhang, Lining / Chew, Weng Cho / Yam, Chi-Yung / Jiang, Li Jun / Chen, Guan-Hua / Chan, Mansun et al. | 2014
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IEEE Transactions on Electron Devices publication information| 2014
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IEEE Transactions on Electron Devices information for authors| 2014