A Microfabricated Planar Helix Slow-Wave Structure to Avoid Dielectric Charging in TWTs (English)
- New search for: Chen Zhao
- New search for: Chen Zhao
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- New search for: Ciersiang Chua
In:
IEEE transactions on electron devices
;
62
, 4
; 1342-1348
;
2015
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ISSN:
- Article (Journal) / Print
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Title:A Microfabricated Planar Helix Slow-Wave Structure to Avoid Dielectric Charging in TWTs
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Contributors:
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Published in:IEEE transactions on electron devices ; 62, 4 ; 1342-1348
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Publisher:
- New search for: IEEE
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Place of publication:New York, NY
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Publication date:2015
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.50 / 53.00 / 52.50 / 54.20
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Source:
Table of contents – Volume 62, Issue 4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1079
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TCAD Strain Calibration Versus Nanobeam Diffraction of Source/Drain Stressors for Ge MOSFETsBuhler, Rudolf Theoderich / Eneman, Geert / Favia, Paola / Witters, Liesbeth Johanna / Vincent, Benjamin / Hikavyy, Andriy / Loo, Roger / Bender, Hugo / Collaert, Nadine / Simoen, Eddy et al. | 2015
- 1085
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Analysis and Modeling of the Narrow Width Effect in Gate-First HKMG nMOS TransistorsSivanaresh, M. Satya / Mohapatra, Nihar Ranjan et al. | 2015
- 1092
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Extraction of Effective Mobility from nMOSFETs With Leaky Gate Dielectric Using Time Domain ReflectometryKim, Yonghun / Lee, Young Gon / Jung, Ukjin / Kim, Jin Ju / Choe, Minhyeok / Lee, Kyong Taek / Pae, Sangwoo / Park, Jongwoo / Lee, Byoung Hun et al. | 2015
- 1098
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Back-gate effect on and BV for thin layer SOI field p-channel LDMOSXin Zhou et al. | 2015
- 1098
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Back-Gate Effect on R},sp}}} and BV for Thin Layer SOI Field p-Channel LDMOSXin Zhou et al. | 2015
- 1098
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Back-Gate Effect on $R_{\mathrm {{\mathrm{{\scriptscriptstyle ON}},sp}}}$ and BV for Thin Layer SOI Field p-Channel LDMOSZhou, Xin / Qiao, Ming / He, Yitao / Wang, Zhuo / Li, Zhaoji / Zhang, Bo et al. | 2015
- 1105
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Asymmetric Dual-Spacer Trigate FinFET Device-Circuit Codesign and Its Variability AnalysisPal, Pankaj Kumar / Kaushik, Brajesh Kumar / Dasgupta, Sudeb et al. | 2015
- 1113
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Ultrathin Crystalline Silicon Heterojunction Solar Cell Integrated on Silicon-on-Insulator SubstrateDuan, Weiyuan / Bian, Jiantao / Yu, Jian / Shi, Jianhua / Liu, Zhengxin et al. | 2015
- 1119
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Threshold Voltage and DIBL Variability Modeling Based on Forward and Reverse Measurements for SRAM and Analog MOSFETsDamrongplasit, Nattapol / Zamudio, Luis / Liu, Tsu-Jae King / Balasubramanian, Sriram et al. | 2015
- 1127
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On the Cryogenic RF Linearity of SiGe HBTs in a Fourth-Generation 90-nm SiGe BiCMOS TechnologyCardoso, Adilson S. / Omprakash, Anup P. / Chakraborty, Partha Sarathi / Karaulac, Nedeljko / Fleischhauer, David M. / Ildefonso, Adrian / Zeinolabedinzadeh, Saeed / Oakley, Michael A. / Bantu, Tikurete G. / Lourenco, Nelson E. et al. | 2015
- 1136
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Comparison of Different Scattering Mechanisms in the Ge (111), (110), and (100) Inversion Layers of nMOSFETs With Si nMOSFETs Under High Normal Electric FieldsWu, Wangran / Li, Xiangdong / Sun, Jiabao / Zhang, Rui / Shi, Yi / Zhao, Yi et al. | 2015
- 1143
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A GaN Pulse Width Modulation Integrated Circuit for GaN Power ConvertersWang, Hanxing / Kwan, Alex Man Ho / Jiang, Qimeng / Chen, Kevin J. et al. | 2015
- 1150
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Gate-Source Distance Scaling Effects in H-Terminated Diamond MESFETsVerona, Claudio / Ciccognani, Walter / Colangeli, Sergio / Pietrantonio, Fabio Di / Giovine, Ennio / Limiti, Ernesto / Marinelli, Marco / Verona-Rinati, Gianluca et al. | 2015
- 1157
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A Five-Parameter Model of the AlGaN/GaN HFETBilbro, Griff L. / Trew, Robert J. et al. | 2015
- 1163
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Robust High Speed Ternary Magnetic Content Addressable MemoryGupta, Mohit Kumar / Hasan, Mohd et al. | 2015
- 1170
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Investigation of the Turn-ON of T-RAM Cells Under Transient ConditionsMulaosmanovic, Halid / Compagnoni, Christian Monzio / Castellani, Niccolo / Paolucci, Giovanni M. / Carnevale, Gianpietro / Fantini, Paolo / Ventrice, Domenico / Lacaita, Andrea L. / Spinelli, Alessandro S. / Benvenuti, Augusto et al. | 2015
- 1177
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Investigation of Temperature Dependence, Device Scalability, and Modeling of Semifloating-Gate Transistor Memory CellLin, Xi / Liu, Xiao-Yong / Zhang, Chun-Min / Liu, Lei / Shi, Jin-Shan / Zhang, Shuai / Wang, Wen-Bo / Bu, Wei-Hai / Wu, Jun / Gong, Yi et al. | 2015
- 1184
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Charge Trapping Memory Characteristics of Amorphous-Indium–Gallium–Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina DielectricLi, Ya / Pei, Yanli / Hu, Ruiqin / Chen, Zimin / Ni, Yiqiang / Lin, Jiayong / Chen, Yiting / Zhang, Xiaoke / Shen, Zhen / Liang, Jun et al. | 2015
- 1189
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a-InGaZnO Thin-Film Transistor-Based Operational Amplifier for an Adaptive DC–DC Converter in Display Driving SystemsKim, Kichan / Choi, Keun-Yeong / Lee, Hojin et al. | 2015
- 1195
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Improvement in Field-Effect Mobility of Indium Zinc Oxide Transistor by Titanium Metal Reaction MethodJi, Hyuk / Hwang, Ah Young / Lee, Chang Kyu / Yun, Pil Sang / Bae, Jong Uk / Park, Kwon-Shik / Jeong, Jae Kyeong et al. | 2015
- 1200
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Temperature Dependence and Dynamic Behavior of Full Well Capacity in Pinned Photodiode CMOS Image SensorsPelamatti, Alice / Belloir, Jean-Marc / Messien, Camille / Goiffon, Vincent / Estribeau, Magali / Magnan, Pierre / Virmontois, Cedric / Saint-Pe, Olivier / Paillet, Philippe et al. | 2015
- 1208
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Negative Differential Resistance in Dense Short Wave Infrared HgCdTe Planar Photodiode ArraysWichman, Adam R. / Pinkie, Benjamin J. / Bellotti, Enrico et al. | 2015
- 1215
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Modeling Minority Carriers Related Capacitive Effects for Transient Substrate Currents in Smart Power ICsStefanucci, Camillo / Buccella, Pietro / Kayal, Maher / Sallese, Jean-Michel et al. | 2015
- 1223
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An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n DiodesHan, Chao / Zhang, Yuming / Song, Qingwen / Zhang, Yimen / Tang, Xiaoyan / Yang, Fei / Niu, Yingxi et al. | 2015
- 1230
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An Ultra-Low Specific ON-Resistance LDMOST With Self-Driven Split GateDu, Wenfang / Lyu, Xinjiang / Ng, Wai Tung / Chen, Xingbi et al. | 2015
- 1235
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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal–Oxide– Semiconductor Capacitor With HfTiON Gate DielectricWang, Li-Sheng / Xu, Jing-Ping / Liu, Lu / Lu, Han-Han / Lai, Pui-To / Tang, Wing-Man et al. | 2015
- 1235
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Plasma-nitrided [] as interfacial passivation layer for InGaAs metal-oxide- semiconductor capacitor with HfTiON gate dielectricLi-Sheng Wang et al. | 2015
- 1241
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Modeling and Analysis of PDN Impedance and Switching Noise in TSV-Based 3-D IntegrationHe, Huanyu / Lu, James Jian-Qiang et al. | 2015
- 1248
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A Combined Process of Liftoff and Printing for the Fabrication of Scalable Inkjet Printed Microstructures on a Flexible SubstrateFu, Yu-Min / Liang, Yen R. / Cheng, Yu-Ting / Wu, Pu-Wei et al. | 2015
- 1255
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Computational Study of Effects of Surface Roughness and Impurity Scattering in Si Double-Gate Junctionless TransistorsIchii, Masato / Ishida, Ryoma / Tsuchiya, Hideaki / Kamakura, Yoshinari / Mori, Nobuya / Ogawa, Matsuto et al. | 2015
- 1262
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Design of GeSn-Based Heterojunction-Enhanced N-Channel Tunneling FET With Improved Subthreshold Swing and ON-State CurrentLiu, Mingshan / Liu, Yan / Wang, Hongjuan / Zhang, Qingfang / Zhang, Chunfu / Hu, Shengdong / Hao, Yue / Han, Genquan et al. | 2015
- 1269
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High- $Q$ Inductors on Locally Semi-Insulated Si Substrate by Helium-3 Bombardment for RF CMOS Integrated CircuitsLi, Ning / Okada, Kenichi / Inoue, Takeshi / Hirano, Takuichi / Bu, Qinghong / Narayanan, Aravind Tharayil / Siriburanon, Teerachot / Sakane, Hitoshi / Matsuzawa, Akira et al. | 2015
- 1276
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Noise Modeling of Graphene Resonant Channel TransistorsLekas, Michael / Lee, Sunwoo / Cha, Wujoon / Hone, James / Shepard, Kenneth et al. | 2015
- 1284
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Morphological Evolution and Its Impacts on Performance of Polymer Solar CellsKhatiwada, Devendra / Venkatesan, Swaminathan / Chen, Jihua / Chen, Qiliang / Adhikari, Nirmal / Dubey, Ashish / Mitul, Abu Farzan / Mohammad, Lal / Sun, Jianyuan / Zhang, Cheng et al. | 2015
- 1291
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Surface Functionalization of Ion-Sensitive Floating-Gate Field-Effect Transistors With Organic ElectronicsZhang, Qi / Majumdar, Himadri S. / Kaisti, Matti / Prabhu, Alok / Ivaska, Ari / Osterbacka, Ronald / Rahman, Arifur / Levon, Kalle et al. | 2015
- 1299
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Piezoresistive Sensor Based on Conductive Polymer Composite With Transverse ElectrodesWang, Luheng et al. | 2015
- 1306
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Influence of High-Frequency Characteristic of a Cavity on the Phase Shift in the Relativistic Klystron AmplifierQi, Zumin / Zhang, Jun / Zhong, Huihuang / Zhu, Danni / Zhang, Wei / Zeng, Fanzheng et al. | 2015
- 1312
-
Terahertz Switch Based on Waveguide-Cavity-Waveguide Comprising Cylindrical Spoof Surface Plasmon PolaritonAghadjani, Mahdi / Mazumder, Pinaki et al. | 2015
- 1319
-
Magnetic Focusing Simulator: A 3-D Finite-Element Permanent-Magnet Focusing System Design ToolChen, Wen-Long / Hu, Quan / Hu, Yu-Lu / Huang, Tao / Xu, Li / Li, Jian-Qing / Li, Bin et al. | 2015
- 1327
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Highly Efficient and Adaptive Numerical Scheme to Analyze Multipactor in Waveguide DevicesYou, Jian Wei / Wang, Hong Guang / Zhang, Jian Feng / Li, Yun / Cui, Wan Zhao / Cui, Tie Jun et al. | 2015
- 1334
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A Study of the Effects of Helix Misalignment on the Cold Parameters of a Sheath Helix Slow-Wave StructureWei, Wanghe / Wei, Yanyu / Wang, Yuanyuan / Wang, Wenxiang / Gong, Yubin et al. | 2015
- 1342
-
A Microfabricated Planar Helix Slow-Wave Structure to Avoid Dielectric Charging in TWTsZhao, Chen / Aditya, Sheel / Chua, Ciersiang et al. | 2015
- 1349
-
Improving ESD Robustness of pMOS Device With Embedded SCR in 28-nm High- $k$ /Metal Gate CMOS ProcessLin, Chun-Yu / Chang, Pin-Hsin / Chang, Rong-Kun et al. | 2015
- 1349
-
Improving ESD robustness of pMOS device with embedded SCR in 28-nm high- kappa/metal gate CMOS processChun-Yu Lin et al. | 2015
- 1353
-
Influence of Preferred Gate Metal Grain Orientation on Tunneling FETsChoi, Kyoung Min / Lee, Won-Sok / Lee, Keun-Ho / Park, Young-Kwan / Choi, Woo Young et al. | 2015
- 1357
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Transistor Matching and Fin Angle Variation in FinFET TechnologyAgarwal, Samarth / Hook, Terence B. / Bajaj, Mohit / McStay, Kevin / Wang, Weike / Zhang, Yanli et al. | 2015
- 1360
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Erratum to “Additional Nitrogen Ion-Implantation Treatment in STI to Relax the Intrinsic Compressive Stress for n-MOSFETs”Liao, M.-H. / Chen, C. H. / Chang, L. C. / Yang, C. / Kao, S. C. et al. | 2015
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