Dark current transport and avalanche mechanism in HgCdTe electron-avalanche photodiodes (English)
- New search for: Qiu, Wei-Cheng
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In:
IEEE transactions on electron devices
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62
, 6
; 1932
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2015
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ISSN:
- Article (Journal) / Print
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Title:Dark current transport and avalanche mechanism in HgCdTe electron-avalanche photodiodes
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Contributors:Qiu, Wei-Cheng ( author ) / Hu, Wei-Da / Chen, Lu / Lin, Chun / Cheng, Xiang-Ai / Chen, Xiao-Shuang / Lu, Wei
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Published in:IEEE transactions on electron devices ; 62, 6 ; 1932
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Place of publication:New York, NY
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Publication date:2015
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 62, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1677
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Table of contents| 2015
- 1680
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Foreword Special Issue on Variation Aware Technology and Circuit Co-DesignSong, Stanley S. C. / Shang, Huiling / Ikeda, Shuji et al. | 2015
- 1682
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Variability Aware Simulation Based Design- Technology Cooptimization (DTCO) Flow in 14 nm FinFET/SRAM CooptimizationAsenov, Asen / Cheng, Binjie / Wang, Xingsheng / Brown, Andrew Robert / Millar, Campbell / Alexander, Craig / Amoroso, Salvatore Maria / Kuang, Jente B. / Nassif, Sani R. et al. | 2015
- 1691
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Impact of Variation in Nanoscale Silicon and Non-Silicon FinFETs and Tunnel FETs on Device and SRAM PerformanceAgrawal, Nidhi / Liu, Huichu / Arghavani, Reza / Narayanan, Vijay / Datta, Suman et al. | 2015
- 1698
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Design of a 22-nm FinFET-Based SRAM With Read Buffer for Near-Threshold Voltage OperationPark, Juhyun / Yang, Younghwi / Jeong, Hanwool / Song, Seung Chul / Wang, Joseph / Yeap, Geoffrey / Jung, Seong-Ook et al. | 2015
- 1705
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Worst Case Sampling Method to Estimate the Impact of Random Variation on Static Random Access MemoryLee, Gyo Sub / Shin, Changhwan et al. | 2015
- 1710
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Analysis of GeOI FinFET 6T SRAM Cells With Variation-Tolerant WLUD Read-Assist and TVC Write-AssistHu, Vita Pi-Ho / Fan, Ming-Long / Su, Pin / Chuang, Ching-Te et al. | 2015
- 1716
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Simplistic Simulation-Based Device-VT-Targeting Technique to Determine Technology High-Density LELE-Gate-Patterned FinFET SRAM in Sub-10 nm EraSakhare, Sushil Sudam / Miyaguchi, Kenichi / Raghavan, Praveen / Mercha, Abdelkarim et al. | 2015
- 1716
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Simplistic simulation-vased sevice-VT-targeting technique to determine technology high-density LELE-gate-patterned FinFET SRAM in Sub-10 nm eraSakhare, S.S et al. | 2015
- 1725
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Impacts of Random Telegraph Noise (RTN) on Digital CircuitsLuo, Mulong / Wang, Runsheng / Guo, Shaofeng / Wang, Jing / Zou, Jibin / Huang, Ru et al. | 2015
- 1733
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Analysis of High- $\kappa $ Spacer Asymmetric Underlap DG-MOSFET for SOC ApplicationKoley, Kalyan / Dutta, Arka / Saha, Samar K. / Sarkar, Chandan K. et al. | 2015
- 1739
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Accurate Simulation of Transistor-Level Variability for the Purposes of TCAD-Based Device-Technology CooptimizationGerrer, Louis / Brown, Andrew R. / Millar, Campbell / Hussin, Razaidi / Amoroso, Salvatore Maria / Cheng, Binjie / Reid, Dave / Alexander, Craig / Fried, David / Hargrove, Michael et al. | 2015
- 1746
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New Assessment Methodology Based on Energy–Delay–Yield Cooptimization for Nanoscale CMOS TechnologyJiang, Xiaobo / Wang, Junyao / Wang, Xingsheng / Wang, Runsheng / Cheng, Binjie / Asenov, Asen / Wei, Lan / Huang, Ru et al. | 2015
- 1754
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Variation-Aware Figure of Merit for Integrated Circuit in Near-Threshold RegionJeong, Hanwool / Yang, Younghwi / Song, Seung Chul / Wang, Joseph / Yeap, Geoffrey / Jung, Seong-Ook et al. | 2015
- 1760
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SOI FinFET nFET-to-pFET Tracking Variability Compact Modeling and Impact on Latch TimingDeng, Jie / Rahman, Ardasheir / Thoma, Rainer / Schneider, Peter W. / Johnson, Jim / Trombley, Henry / Lu, Ning / Williams, Richard Q. / Nayfeh, Hasan M. / Zhao, Kai et al. | 2015
- 1769
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Reconfigurable Codesign of STT-MRAM Under Process Variations in Deeply Scaled TechnologyKang, Wang / Zhang, Liuyang / Klein, Jacques-Olivier / Zhang, Youguang / Ravelosona, Dafine / Zhao, Weisheng et al. | 2015
- 1778
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Random Variation Analysis and Variation-Aware Design of Symmetric Tunnel Field-Effect TransistorLee, Hyunjae / Park, Seulki / Lee, Youngtaek / Nam, Hyohyun / Shin, Changhwan et al. | 2015
- 1784
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CMOS Device Performance Improvement Using Flood Buried-Contact Plasma Doping ProcessesQin, Shu / Hu, Yongjun Jeff / McTeer, Allen et al. | 2015
- 1789
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Atomistic Modeling of Pocket Dopant Deactivation and Its Impact on $V_{\textrm {th}}$ Variation in Scaled Si Planar Devices Using an Atomistic Kinetic Monte Carlo ApproachNoda, Taiji / Vrancken, Christa / Vandervorst, Wilfried et al. | 2015
- 1796
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Scaling of TG-FinFETs: 3-D Monte Carlo Simulations in the Ballistic and Quasi-Ballistic RegimesElthakeb, Ahmed T. / Elhamid, Hamdy Abd / Ismail, Yehea et al. | 2015
- 1803
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A Comparison of the Degradation in RF Performance Due to Device Interconnects in Advanced SiGe HBT and CMOS TechnologiesSchmid, Robert L. / Ulusoy, Ahmet Cagri / Zeinolabedinzadeh, Saeed / Cressler, John D. et al. | 2015
- 1811
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Modeling of Hot-Carrier Degradation in nLDMOS Devices: Different Approaches to the Solution of the Boltzmann Transport EquationSharma, Prateek / Tyaginov, Stanislav / Wimmer, Yannick / Rudolf, Florian / Rupp, Karl / Bina, Markus / Enichlmair, Hubert / Park, Jong-Mun / Minixhofer, Rainer / Ceric, Hajdin et al. | 2015
- 1819
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Mobility Investigations on Strained 30-nm High- $k$ Metal Gate MOSFETs by Geometrical Magnetoresistance EffectBeister, Jurgen / Wachowiak, Andre / Boschke, Roman / Herrmann, Tom / Uhlarz, Marc / Mikolajick, Thomas et al. | 2015
- 1826
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Point-Contacting by Localized Dielectric Breakdown With Breakdown Fields Described by the Weibull DistributionWestern, Ned J. / Perez-Wurfl, Ivan / Wenham, Stuart R. / Bremner, Stephen P. et al. | 2015
- 1831
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Normally-off Logic Based on Resistive Switches—Part I: Logic GatesBalatti, Simone / Ambrogio, Stefano / Ielmini, Daniele et al. | 2015
- 1839
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Normally-off Logic Based on Resistive Switches—Part II: Logic CircuitsBalatti, Simone / Ambrogio, Stefano / Ielmini, Daniele et al. | 2015
- 1848
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Full-Band 3-D Monte Carlo Simulation of InAs Nanowires and High Frequency AnalysisPopescu, Bogdan / Popescu, Dan / Saraniti, Marco / Lugli, Paolo et al. | 2015
- 1855
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On the Ballistic Performance of InGaSb XOI FET: Impact of Channel Thickness and Interface StatesAlam, Md. Nur Kutubul / Islam, Muhammad Shaffatul / Kibria, Md. Golam / Islam, Md. Rafiqul et al. | 2015
- 1862
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Fabrication and Characterization of Gate-Last Self-Aligned AlN/GaN MISHEMTs With In Situ SiNx Gate DielectricLu, Xing / Ma, Jun / Jiang, Huaxing / Liu, Chao / Xu, Peiqiang / Lau, Kei May et al. | 2015
- 1870
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AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTsYang, Shu / Liu, Shenghou / Lu, Yunyou / Liu, Cheng / Chen, Kevin J. et al. | 2015
- 1879
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Sol-Gel-Based Highly Sensitive Pd/n-ZnO Thin Film/n-Si Schottky Ultraviolet PhotodiodesYadav, Aniruddh Bahadur / Pandey, Amritanshu / Somvanshi, Divya / Jit, Satyabrata et al. | 2015
- 1885
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Development of 2-D Boron Nitride Nanosheets UV Photoconductive DetectorsAldalbahi, Ali / Feng, Peter et al. | 2015
- 1891
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Sensitivity Improvement in GaAsSb-Based Heterojunction Backward Diodes by Optimized Doping ConcentrationTakahashi, Tsuyoshi / Sato, Masaru / Nakasha, Yasuhiro / Hara, Naoki et al. | 2015
- 1898
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Analysis of Quantized Electrical Characteristics of Microscale TiO2 Ink-Jet Printed MemristorSamardzic, Natasa / Mionic, Marijana / Dakic, Bojan / Hofmann, Heinrich / Dautovic, Stanisa / Stojanovic, Goran et al. | 2015
- 1898
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Analysis of quantized electrical characteristics of microscale TiO ink-jet printed memristorSamardzic, N et al. | 2015
- 1905
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Modeling of Dynamic Operation of T-RAM CellsResnati, Davide / Monzio Compagnoni, Christian / Mulaosmanovic, Halid / Castellani, Niccolo / Carnevale, Gianpietro / Fantini, Paolo / Ventrice, Domenico / Lacaita, Andrea L. / Spinelli, Alessandro S. / Benvenuti, Augusto et al. | 2015
- 1912
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Modeling of Self-Aligned Vertical ZnO Thin-Film TransistorsSun, Kaige G. / Nelson, Shelby F. / Jackson, Thomas N. et al. | 2015
- 1918
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Active-Matrix GaN Micro Light-Emitting Diode Display With Unprecedented BrightnessHerrnsdorf, Johannes / McKendry, Jonathan J. D. / Zhang, Shuailong / Xie, Enyuan / Ferreira, Ricardo / Massoubre, David / Zuhdi, Ahmad Mahmood / Henderson, Robert K. / Underwood, Ian / Watson, Scott et al. | 2015
- 1926
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Dark Current Transport and Avalanche Mechanism in HgCdTe Electron-Avalanche PhotodiodesQiu, Wei-Cheng / Hu, Wei-Da / Chen, Lu / Lin, Chun / Cheng, Xiang-Ai / Chen, Xiao-Shuang / Lu, Wei et al. | 2015
- 1932
-
Design of a Coherent Receiver Based on InAs Electron Avalanche Photodiode for Free-Space Optical CommunicationsWen, Ke / Zhao, Yanli / Gao, Jing / Zhang, Shibo / Tu, Junjie et al. | 2015
- 1939
-
Single Photon Avalanche Diode Collection Efficiency Enhancement via Peripheral Well-Controlled FieldSavuskan, Vitali / Gal, Lior / Cristea, David / Javitt, Michael / Feiningstein, Amos / Leitner, Tomer / Nemirovsky, Yael et al. | 2015
- 1946
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Relating the Experimental Ionization Coefficients in Semiconductors to the Nonlocal Ionization CoefficientsCheong, Jeng Shiuh / Hayat, Majeed M. / Zhou, Xinxin / David, John P. R. et al. | 2015
- 1953
-
500 °C Bipolar SiC Linear Voltage RegulatorKargarrazi, Saleh / Lanni, Luigia / Saggini, Stefano / Rusu, Ana / Zetterling, Carl-Mikael et al. | 2015
- 1953
-
500 degrees C Bipolar SiC Linear Voltage RegulatorKargarrazi, Saleh et al. | 2015
- 1958
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Breakdown Voltage Model and Electrical Characteristics of CMOS Compatible RESURF STI Drain Extended MOS TransistorsTsai, Hung-Chih / Yadav, Yogendra / Liou, Ruey-Hsin / Wu, Kuo-Ming / Lin, Yi-Chin / Lien, Chenhsin et al. | 2015
- 1964
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Impact of Electron Irradiation on the ON-State Characteristics of a 4H–SiC JBS DiodeVobecky, Jan / Hazdra, Pavel / Popelka, Stanislav / Sharma, Rupendra Kumar et al. | 2015
- 1970
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250 V Thin-Layer SOI Technology With Field pLDMOS for High-Voltage Switching ICQiao, Ming / Zhang, Kang / Zhou, Xin / Zou, Jie / Zhang, Bo / Li, Zhaoji et al. | 2015
- 1977
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Engineering Electrical Interfaces to Silicon via Indium SolderPanas, Robert M. / Culpepper, Martin L. et al. | 2015
- 1984
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Role of Junction Geometry in Determining the Rectification Performance of Nanostructured TiO2-Based p-n JunctionsHazra, Arnab / Bhattacharyya, Partha et al. | 2015
- 1991
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Electrical Activation, Deactivation, and Reactivation Mechanism Study of Plasma Doping ProcessesQin, Shu et al. | 2015
- 1998
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Microscopic Modeling of HfOx RRAM Operations: From Forming to SwitchingPadovani, Andrea / Larcher, Luca / Pirrotta, Onofrio / Vandelli, Luca / Bersuker, Gennadi et al. | 2015
- 1998
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Microscopic modeling of HfO RRAM operations: from forming to switchingPadovani, A et al. | 2015
- 2007
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Analysis of the Excellent Memory Disturb Characteristics of a Hourglass-Shaped Filament in Al2O3/Cu-Based CBRAM DevicesBelmonte, Attilio / Celano, Umberto / Redolfi, Augusto / Fantini, Andrea / Muller, Robert / Vandervorst, Wilfried / Houssa, Michel / Jurczak, Malgorzata / Goux, Ludovic et al. | 2015
- 2014
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UV Enhanced Field Emission Properties of Ga-Doped ZnO NanosheetsLiu, Yi-Hsing / Young, Sheng-Joue / Ji, Liang-Wen / Chang, Shoou-Jinn et al. | 2015
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Techniques for the Development of Multistage Depressed CollectorsLatha, A. Mercy / Sharma, Rajendra Kumar / Kumar, Yogesh / Ghosh, Sanjay Kumar et al. | 2015
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Blank page| 2015
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Analysis of the excellent memory disturb characteristics of a hourglass-shaped filament in AlO(sub 3)/Cu-Based CBRAM devicesBelmonte, A et al. | 2015