Effects of impurity and cross-sectional shape on entropy of quantum wires (English)
- New search for: Khordad, R.
- New search for: Rastegar Sedehi, H. R.
- New search for: Bahramiyan, H.
- New search for: Khordad, R.
- New search for: Rastegar Sedehi, H. R.
- New search for: Bahramiyan, H.
In:
Journal of Computational Electronics
;
17
, 2
; 551-561
;
2018
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ISSN:
- Article (Journal) / Print
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Title:Effects of impurity and cross-sectional shape on entropy of quantum wires
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Contributors:
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Published in:Journal of Computational Electronics ; 17, 2 ; 551-561
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Publisher:
- New search for: Springer US
- New search for: Kluwer Academic Publ.
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Place of publication:Norwell, Mass. [u.a.]
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Publication date:2018
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 / 53.52 / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03
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Keywords:
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Classification:
BKL: 53.52$jElektronische Schaltungen / 54.76$jComputersimulation / 54.76 Computersimulation / 53.52 Elektronische Schaltungen / 53.03$jMethoden und Techniken der Elektrotechnik / 53.03 Methoden und Techniken der Elektrotechnik -
Source:
Table of contents – Volume 17, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 491
-
Exact analytical solution to the electron density for monolayer and bilayer grapheneSelvaggi, Jerry P. et al. | 2018
- 499
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Tuning electronic, magnetic, and transport properties of blue phosphorene by substitutional doping: a first-principles studySafari, Fatemeh / Fathipour, Morteza / Yazdanpanah Goharrizi, Arash et al. | 2018
- 514
-
Strain engineering of band dispersion and dielectric response of monolayer and bilayer AlNBehzad, Somayeh et al. | 2018
- 521
-
On the electronic and transport properties of semiconducting carbon nanotubes: the role of -defectsTeich, D. / Claus, M. / Seifert, G. et al. | 2018
- 521
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On the electronic and transport properties of semiconducting carbon nanotubes: the role of $$\hbox {sp}^3$$-defectsTeich, D. / Claus, M. / Seifert, G. et al. | 2018
- 531
-
Graphene nanoribbon photodetectors based on an asymmetric potential barrier: a new concept and a new structureZarei, Mohammad H. / Sharifi, Mohammad J. et al. | 2018
- 540
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FDTD algorithm to achieve absolute stability in performance analysis of SWCNT interconnectsVenkataiah, C. / Satyaprasad, K. / Prasad, T. Jayachandra et al. | 2018
- 551
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Effects of impurity and cross-sectional shape on entropy of quantum wiresKhordad, R. / Rastegar Sedehi, H. R. / Bahramiyan, H. et al. | 2018
- 562
-
Modeling and simulation of a graphene-based three-terminal junction rectifierGarg, Ankur / Jain, Neelu / Singh, Arun Kumar et al. | 2018
- 571
-
A fast method for process reliability analysis of CNFET-based digital integrated circuitsSaeedi, Fereshteh / Ghavami, Behnam / Raji, Mohsen et al. | 2018
- 580
-
First-principles study of electron transport in azulene molecular junction: effect of electrode material on electrical rectification behaviorKala, C. Preferencial / Thiruvadigal, D. John et al. | 2018
- 586
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Electronic signature of single-molecular device based on polyacetylene derivativeOliveira, Alexandre de S. / Beirão, Antonio T. M. / Silva, Shirsley S. / Nero, Jordan et al. | 2018
- 595
-
Time evolution of current density in conducting single-walled carbon nanotubesMajid, M. J. / Alaa, M. H. et al. | 2018
- 604
-
Spin-dependent transport in a multifunctional spintronic device with graphene nanoribbon electrodesHan, Xiaoxiao / Yang, Jingjuan / Yuan, Peipei / Bian, Baoan / Shi, Haifeng / Ding, Yuqiang et al. | 2018
- 613
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The effect of sharp-corner emendation of irregular FinFETs on electrothermal characteristicsKarimi, Fa. / Orouji, Ali A. et al. | 2018
- 625
-
On the accuracy of reduced-order integrated circuit simulators for computing the heat production on electronic componentsAbali, B. Emek / Zohdi, Tarek I. et al. | 2018
- 637
-
Design and structural optimization of junctionless FinFET with Gaussian-doped channelKaundal, Shalu / Rana, Ashwani K. et al. | 2018
- 646
-
Investigation of a novel SOI LDMOS using p+ buried islands in the drift region by numerical simulationsLei, Jianmei / Hu, Shengdong / Yang, Dong / Huang, Ye / Yuan, Qi / Guo, Jingwei / Zeng, Linghui / Wang, Siqi / Yang, Xuan et al. | 2018
- 653
-
An improved model to assess temperature-dependent DC characteristics of submicron GaN HEMTsKhan, M. N. / Ahmed, U. F. / Ahmed, M. M. / Rehman, S. et al. | 2018
- 663
-
GaN-based double-gate (DG) sub-10-nm MOSFETs: effects of gate work functionMehedi, Ibrahim Mustafa / Alshareef, Abdulaziz M. / Islam, Md. Rafiqul / Hasan, Md. Tanvir et al. | 2018
- 670
-
Analysis and modeling of unipolar junction transistor with excellent performance: a novel DG MOSFET with junctionRamezani, Zeinab / Orouji, Ali A. et al. | 2018
- 682
-
Simulation of effects of emitter and collector widths on performance of silicon–germanium (SiGe) heterojunction bipolar transistors (HBTs)Khadir, A. / Sengouga, N. / Kouzou, A. / Abdelhafidi, M. K. et al. | 2018
- 689
-
Application of the generalized logistic functions in modeling inversion charge density of MOSFETKevkić, Tijana / Stojanović, Vladica / Joksimović, Dušan et al. | 2018
- 698
-
Fast, energy-efficient electronic structure simulations for multi-million atomic systems with GPU devicesRyu, Hoon / Kwon, Oh-Kyoung et al. | 2018
- 707
-
A novel Schottky contact super barrier rectifier with a top N-enhancement layer and a P-injectorChen, Wensuo / Liao, Ruijin / Zeng, Zheng / Zhang, Peijian et al. | 2018
- 713
-
Two-dimensional (2D) analytical investigation of an n-type junctionless gate-all-around tunnel field-effect transistor (JL GAA TFET)Ajay / Narang, Rakhi / Saxena, Manoj / Gupta, Mridula et al. | 2018
- 724
-
Continuous semianalytical modeling of vertical surrounding-gate tunnel FET: analog/RF performance evaluationAbdelmalek, Nidhal / Djeffal, Fayçal / Bentrcia, Toufik et al. | 2018
- 736
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Improvement in electrostatic characteristics of doped TFETs by hole layer formationSoni, Deepak / Sharma, Dheeraj / Aslam, Mohd. / Yadav, Shivendra et al. | 2018
- 745
-
Characteristics of GaAs/GaSb tunnel field-effect transistors without doping junctions: numerical studiesVadizadeh, Mahdi et al. | 2018
- 756
-
Impact of asymmetric dual-k spacers on tunnel field effect transistorsRaushan, Mohd Adil / Alam, Naushad / Akram, Mohd Waseem / Siddiqui, Mohd Jawaid et al. | 2018
- 766
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Numerical analysis of a polysilicon-based resistive memory deviceBerco, Dan / Chand, Umesh et al. | 2018
- 774
-
Reliable high-yield CNTFET-based 9T SRAM operating near threshold voltage regionPatel, Pramod Kumar / Malik, M. M. / Gupta, Tarun K. et al. | 2018
- 784
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Photovoltaic module parameter estimation using an analytical approach and least squares methodMaouhoub, Noureddine et al. | 2018
- 791
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On the optoelectronic properties of non-covalently functionalized graphene for solar cell applicationChouk, Rihab / Bergaoui, Manel / Khalfaoui, Mohamed et al. | 2018
- 810
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Estimating various losses in c-Si solar cells subjected to partial shading: insights into J–V performance reductionPurohit, Zeel / Chaliyawala, Harsh / Kumar, Manoj / Tripathi, Brijesh et al. | 2018
- 821
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Synthesis, computational study and characterization of a 3-{[2,3-diphenylquinoxalin-6-yl]diazenyl}-4-hydroxy-2H-chromen-2- one azo dye for dye-sensitized solar cell applicationsToor, Ramshah Ahmad / Sayyad, Muhammad Hassan / Shah, Syed Afaq Ali / Nasr, Nazia / Ijaz, Fatima / Munawar, Munawar Ali et al. | 2018
- 830
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Design of a high bitrate optical decoder based on photonic crystalsParandin, Fariborz / Karkhanehchi, M. Mehdi / Naseri, Mosayeb / Zahedi, Abdulhamid et al. | 2018
- 837
-
Design of an optical half-adder using cohesive twin-structured PCRRJanani, K / Rajesh, A / Shankar, T et al. | 2018
- 845
-
Design and performance analysis of all-optical cascaded adder using SOA-based MZIRamachandran, Manohari / Prince, Shanthi / Verma, Deepika et al. | 2018
- 857
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Analytical predictions for nonlinear optical processes in silicon slot waveguidesPriye, Vishnu / Malviya, Nishit / Mickelson, Alan et al. | 2018
- 866
-
A novel three-input approximate XOR gate design based on quantum-dot cellular automataMaroufi, Negin / Bahrepour, Davoud et al. | 2018
- 880
-
Correction to: From materials to systems: a multiscale analysis of nanomagnetic switchingXie, Yunkun / Ma, Jianhua / Ganguly, Samiran / Ghosh, Avik W. et al. | 2018