Characterization of ultrathin gate dielectrics formed by in-situ steam generation with nitrogen postprocessing (English)
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In:
Journal of Electronic Materials
;
31
, 2
; 124-128
;
2002
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ISSN:
- Article (Journal) / Print
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Title:Characterization of ultrathin gate dielectrics formed by in-situ steam generation with nitrogen postprocessing
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Contributors:Karamcheti, A. ( author ) / Watt, V. H. C. ( author ) / Al-Shareef, H. N. ( author ) / Luo, T. Y. ( author ) / Jackson, M. D. ( author ) / Huff, H. R. ( author ) / Steinbrüchel, C. ( author )
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Published in:Journal of Electronic Materials ; 31, 2 ; 124-128
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Publisher:
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Place of publication:Warrendale, Pa.
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Publication date:2002
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Table of contents – Volume 31, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 95
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In-based AlInAs/GaAs(0.51)Sb(0.49)/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applicationsYi, C. / Kim, T.H. / Brown, A.S. et al. | 2002
- 95
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InP-based AllnAs/$ GaAs_{0.51} $$ Sb_{0.49} $/GaInAs single heterojunction bipolar transistor for high-speed and RF wireless applicationsYi, Changhyun / Kim, Tong-Ho / Brown, April S. et al. | 2002
- 99
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Donor-acceptor interactions in $ Al_{0.5} $$ In_{0.5} $PGrillot, P. N. / Stockman, S. A. / Huang, J. -W. / Yi, S. S. et al. | 2002
- 108
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Highly concentrated ozone gas supplied at an atmospheric pressure condition as a new oxidizing reagent for the formation of $ SiO_{2} $ thin film on SiKoike, Kunihiko / Ichimura, Shingo / Kurokawa, Akira / Nakamura, Ken et al. | 2002
- 113
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Point defects generated by direct-wafer bonding of siliconDózsa, L. / Szentpáli, B. / Pasquariello, D. / Hjort, K. et al. | 2002
- 119
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The determination of the interface-state density distribution from the capacitance-frequency measurements in Au/n-Si schottky barrier diodesAyyildiz, E. / Nuho Lu, Ç. / Türüt, A et al. | 2002
- 124
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Characterization of ultrathin gate dielectrics formed by in-situ steam generation with nitrogen postprocessingKaramcheti, A. / Watt, V. H. C. / Al-Shareef, H. N. / Luo, T. Y. / Jackson, M. D. / Huff, H. R. / Steinbrüchel, C. et al. | 2002
- 129
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Pulsed-magnetron-sputtered low-temperature indium tin oxide films for flat-panel display applicationsLee, William J. / Fang, Yean-Kuen / Ho, Jyh-Jier / Chen, Chin-Ying / Tsai, Rung-Ywan / Huang, Daoyang / Ho, Fang C. / Chou, H. W. / Chen, C. C. et al. | 2002
- 136
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Joint shape, microstructure, and shear strength of lead-free solder joints with different component terminationsAhat, Shawkret / Weidong, Huang / Mei, Sheng / Le, Luo et al. | 2002
- 142
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Low-cycle fatigue behavior and mechanisms of a lead-free solder 96.5Sn/3.5AgKanchanomai, Chaosuan / Miyashita, Yukio / Mutoh, Yoshiharu et al. | 2002
- 152
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Interfacial reactions in In-Sn/Ni couples and phase equilibria of the In-Sn-Ni systemHuang, Ching-Yu / Chen, Sinn-Wen et al. | 2002
- 152
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Interfacial reactions in In-Sn/Ni couples and phase equilibrias of the In-Sn-Ni systemHuang, C.Y. / Chen, S.W. et al. | 2002
- 161
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Determination of the eutectic structure in the Ag-Cu-Sn systemLewis, Daniel / Allen, Sarah / Notis, Michael / Scotch, Adam et al. | 2002