Influence of Sn resonance states on the electrical homogeneity of $ Bi_{2} $$ Te_{3} $ single crystals (English)
- New search for: Zhitinskaya, M. K.
- New search for: Nemov, S. A.
- New search for: Svechnikova, T. E.
- New search for: Reinshaus, P.
- New search for: Müller, E.
- New search for: Zhitinskaya, M. K.
- New search for: Nemov, S. A.
- New search for: Svechnikova, T. E.
- New search for: Reinshaus, P.
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In:
Semiconductors
;
34
, 12
; 1363-1364
;
2000
-
ISSN:
- Article (Journal) / Print
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Title:Influence of Sn resonance states on the electrical homogeneity of $ Bi_{2} $$ Te_{3} $ single crystals
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Contributors:Zhitinskaya, M. K. ( author ) / Nemov, S. A. ( author ) / Svechnikova, T. E. ( author ) / Reinshaus, P. ( author ) / Müller, E. ( author )
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Published in:Semiconductors ; 34, 12 ; 1363-1364
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Publisher:
- New search for: Nauka/Interperiodica
- New search for: Pleiades Publ.
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Place of publication:New York, NY
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Publication date:2000
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.00
- Further information on Basic classification
- New search for: 770/3480/8000
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Keywords:
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Classification:
BKL: 53.00 Elektrotechnik: Allgemeines Local classification TIB: 770/3480/8000 -
Source:
Table of contents – Volume 34, Issue 12
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1355
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The scanning tunneling microscopy and scanning tunneling spectroscopy of amorphous carbonIvanov-Omskii, V. I. / Lodygin, A. B. / Yastrebov, S. G. et al. | 2000
- 1363
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Influence of Sn resonance states on the electrical homogeneity of $ Bi_{2} $$ Te_{3} $ single crystalsZhitinskaya, M. K. / Nemov, S. A. / Svechnikova, T. E. / Reinshaus, P. / Müller, E. et al. | 2000
- 1365
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The In/PbTe barrier structures with a thin intermediate insulating layerAleksandrova, O. A. / Akhmedzhanov, A. T. / Bondokov, R. Ts. / Moshnikov, V. A. / Saunin, I. V. / Tairov, Yu. M. / Shtanov, V. I. / Yashina, L. V. et al. | 2000
- 1370
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The formation kinetics of a strongly absorbing state in a bistable excitonic noncavity systemGudyma, Yu. V. et al. | 2000
- 1376
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Photoluminescence of $ Ga_{1−x} $$ In_{x} $$ As_{y} $$ Sb_{1−y} $ solid solutions lattice-matched to InAsMoiseev, K. D. / Toropov, A. A. / Terent’ev, Ya. V. / Mikhailova, M. P. / Yakovlev, Yu. P. et al. | 2000
- 1381
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Type II broken-gap InAs/$ GaIn_{0.17} $$ As_{0.22} $Sb heterostructures with abrupt planar interfaceMoiseev, K. D. / Sitnikova, A. A. / Faleev, N. N. / Yakovlev, Yu. P. et al. | 2000
- 1386
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Special features of alpha-particle detection with thin semi-insulating 6H-SiC filmsStrokan, N. B. / Lebedev, A. A. / Ivanov, A. M. / Davydov, D. V. / Kozlovskii, V. V. et al. | 2000
- 1391
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Vibration modes of carbon in hydrogenated amorphous carbon modified with copperIvanov-Omskii, V. I. / Zvonareva, T. K. / Frolova, G. S. et al. | 2000
- 1397
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On the internal quantum efficiency and carrier ejection in InGaAsP/InP-based quantum-well lasersLeshko, A. Yu. / Lyutetskii, A. V. / Pikhtin, N. A. / Skrynnikov, G. V. / Sokolova, Z. N. / Tarasov, I. S. / Fetisova, N. V. et al. | 2000
- 1402
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Long-wavelength light-emitting diodes (λ=3.4–3.9 µm) based on InAsSb/InAs heterostructures grown by vapor-phase epitaxyZotova, N. V. / Kizhaev, S. S. / Molchanov, S. S. / Popova, T. B. / Yakovlev, Yu. P. et al. | 2000
- 1406
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Emission-line broadening of current tunable InAsSbP/InAsSb/InAsSbP heterostructure lasersImenkov, A. N. / Kolchanova, N. M. / Kubat, P. / Civish, S. / Yakovlev, Yu. P. et al. | 2000
- 1410
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Serge$$\overset{\lower0.5em\hbox{$\smash{\scriptscriptstyle\smile}$}}{l}$$ Petrovich Solov’ev (1932–2000)Brudnyi, V. N. / Bublik, V. T. / Goshitskii, B. N. / Emtsev, V. V. / Kazanskii, Yu. A. / Konopleva, R. F. / Konobeev, Yu. V. / Kolin, N. G. / Kuz’min, I. I. / Mil’vidskii, M. G. et al. | 2000