X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure (English)
- New search for: Strelchuk, V. V.
- New search for: Kladko, V. P.
- New search for: Avramenko, E. A.
- New search for: Kolomys, O. F.
- New search for: Safryuk, N. V.
- New search for: Konakova, R. V.
- New search for: Yavich, B. S.
- New search for: Valakh, M. Ya.
- New search for: Machulin, V. F.
- New search for: Belyaev, A. E.
- New search for: Strelchuk, V. V.
- New search for: Kladko, V. P.
- New search for: Avramenko, E. A.
- New search for: Kolomys, O. F.
- New search for: Safryuk, N. V.
- New search for: Konakova, R. V.
- New search for: Yavich, B. S.
- New search for: Valakh, M. Ya.
- New search for: Machulin, V. F.
- New search for: Belyaev, A. E.
In:
Semiconductors
;
44
, 9
; 1199-1210
;
2010
-
ISSN:
- Article (Journal) / Print
-
Title:X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructure
-
Contributors:Strelchuk, V. V. ( author ) / Kladko, V. P. ( author ) / Avramenko, E. A. ( author ) / Kolomys, O. F. ( author ) / Safryuk, N. V. ( author ) / Konakova, R. V. ( author ) / Yavich, B. S. ( author ) / Valakh, M. Ya. ( author ) / Machulin, V. F. ( author ) / Belyaev, A. E. ( author )
-
Published in:Semiconductors ; 44, 9 ; 1199-1210
-
Publisher:
- New search for: SP MAIK Nauka/Interperiodica
- New search for: Pleiades Publ.
-
Place of publication:New York, NY
-
Publication date:2010
-
ISSN:
-
ZDBID:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 53.00
- Further information on Basic classification
- New search for: 770/3480/8000
-
Keywords:
-
Classification:
BKL: 53.00 Elektrotechnik: Allgemeines Local classification TIB: 770/3480/8000 -
Source:
Table of contents – Volume 44, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1117
-
Analysis of the phase diagrams of the CdS-CdSe-CdTe systemKuznetsov, V. A. et al. | 2010
- 1121
-
Subterahertz self-oscillations of depletion of electron populations in the conduction band of GaAs in the presence of pumping and intrinsic stimulated radiationAgeeva, N. N. / Bronevoi, I. L. / Zabegaev, D. N. / Krivonosov, A. N. et al. | 2010
- 1129
-
Features of reflection spectra of single crystals of $ Bi_{2} $$ Te_{3} $-$ Sb_{2} $$ Te_{3} $ solid solutions in the region of plasma effectsStepanov, N. P. / Kalashnikov, A. A. et al. | 2010
- 1134
-
Differential method of analysis of luminescence spectra of semiconductorsEmel’yanov, A. M. et al. | 2010
- 1140
-
Dislocation electrical conductivity of plastically deformed natural diamondsSamsonenko, S. N. / Samsonenko, N. D. / Timchenko, V. I. et al. | 2010
- 1145
-
Negative magnetoresistance in silicon with manganese-atom complexes [Mn]4Bakhadirkhanov, M. K. / Ayupov, K. S. / Mavlyanov, G. H. / Isamov, S. B. et al. | 2010
- 1149
-
The variance law and scattering mechanism of charge carriers in Zn-doped p-$ In_{0.5} $$ Ga_{0.5} $SbZeynalov, C. A. / Aliev, F. F. / Damirova, S. Z. / Tairov, B. A. et al. | 2010
- 1153
-
Influence of defects formed by fast reactor neutrons on exciton luminescence spectra of cadmium sulfide single crystalsDavidyuk, G. E. / Bogdanyuk, N. S. / Bozhko, V. V. / Kevshyn, A. H. / Manzhara, V. S. / Kažukauskas, V. et al. | 2010
- 1158
-
Charge neutrality level and electronic properties of GaSe under pressureBrudnyi, V. N. / Kosobutsky, A. V. / Sarkisov, S. Yu. et al. | 2010
- 1167
-
The nature of edge luminescence of CdTe:Mg diffusion layersMakhniy, V. P. / Kosolovskiy, V. V. / Slyotov, M. M. / Skrypnyk, M. V. / Slyotov, A. M. et al. | 2010
- 1170
-
Indirect interband transitions in graphite with a wide quasigapSobolev, V. V. / Antonov, E. A. / Sobolev, V. Val. et al. | 2010
- 1176
-
Films of degenerate intrinsic oxides of InSe and $ In_{4} $$ Se_{3} $ semiconductor crystalsKaterynchuk, V. M. / Kovalyuk, M. Z. et al. | 2010
- 1180
-
Electrical characteristics of the CdTe-n-CdHgTe structure fabricated in a single molecular-beam epitaxy processMashukov, Yu. P. / Mikhailov, N. N. / Vasilyev, V. V. et al. | 2010
- 1185
-
Study of the p-Ge-n-GaAs heterojunction under hydrostatic pressureGadjialiev, M. M. / Pirmagomedov, Z. Sh. / Efendieva, T. N. et al. | 2010
- 1187
-
Study of the layer-substrate interface in nc-Si-$ SiO_{2} $-p-Si structures with silicon quantum dots by the method of temperature dependences of photovoltageVenger, E. F. / Kirillova, S. I. / Korsunska, N. E. / Stara, T. R. / Khomenkova, L. Yu. / Sachenko, A. V. / Goldstein, Y. / Savir, E. / Jedrzejewski, J. et al. | 2010
- 1192
-
Electrical properties of thin-film structures formed by pulsed laser deposition of Au, Ag, Cu, Pd, Pt, W, Zr metals on n-6H-SiC crystalRomanov, R. I. / Zuev, V. V. / Fominskii, V. Yu. / Demin, M. V. / Grigoriev, V. V. et al. | 2010
- 1199
-
X-ray diffraction analysis and scanning micro-Raman spectroscopy of structural irregularities and strains deep inside the multilayered InGaN/GaN heterostructureStrelchuk, V. V. / Kladko, V. P. / Avramenko, E. A. / Kolomys, O. F. / Safryuk, N. V. / Konakova, R. V. / Yavich, B. S. / Valakh, M. Ya. / Machulin, V. F. / Belyaev, A. E. et al. | 2010
- 1211
-
Effect of an AC electric field on the conductance of single-wall semiconductor-type carbon nanotubesBelonenko, M. B. / Glazov, S. Yu. / Mescheryakova, N. E. et al. | 2010
- 1217
-
The dependence of the lasing threshold in ZnO nanorods on their lengthGruzintsev, A. N. / Emelchenko, G. A. / Red’kin, A. N. / Volkov, W. T. / Yakimov, E. E. / Visimberga, G. et al. | 2010
- 1222
-
An (AlGaAs/GaAs/AlGaAs)60 resonant Bragg structure based on the second quantum-confinement level of heavy-hole excitons in quantum wellsChaldyshev, V. V. / Sholohov, D. E. / Vasil’ev, A. P. et al. | 2010
- 1227
-
Effect of oxygen plasma on the properties of tantalum oxide filmsKalygina, V. M. / Zarubin, A. N. / Novikov, V. A. / Petrova, Yu. S. / Skakunov, M. S. / Tolbanov, O. P. / Tyazhev, A. V. / Yaskevich, T. M. et al. | 2010
- 1235
-
Mode structure of laser emission from ZnO Nanorods with one metal mirrorGruzintsev, A. N. / Emelchenko, G. A. / Redkin, A. N. / Volkov, W. T. / Yakimov, E. E. / Visimberga, G. et al. | 2010
- 1241
-
EBIC study of nonradiative recombination in silicon LEDs with near-band-edge luminescenceYakimov, E. B. / Sobolev, N. A. et al. | 2010
- 1244
-
Gas-fired thermophotovoltaic generator based on metallic emitters and GaSb cellsVlasov, A. S. / Khvostikov, V. P. / Sorokina, S. V. / Potapovich, N. A. / Kalinovskiy, V. S. / Rakova, E. P. / Andreev, V. M. / Bobyl, A. V. / Tereschenko, G. F. et al. | 2010
- 1249
-
Conductance simulation in an a-Si:H thin-film transistor with Schottky barriersVishnyakov, A. V. / Efremov, M. D. et al. | 2010