Terahertz emission upon the interband excitation of GaN layers (English)
- New search for: Zakhar’in, A. O.
- New search for: Bobylev, A. V.
- New search for: Andrianov, A. V.
- New search for: Zakhar’in, A. O.
- New search for: Bobylev, A. V.
- New search for: Andrianov, A. V.
In:
Semiconductors
;
46
, 9
; 1135-1139
;
2012
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ISSN:
- Article (Journal) / Print
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Title:Terahertz emission upon the interband excitation of GaN layers
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Contributors:
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Published in:Semiconductors ; 46, 9 ; 1135-1139
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Publisher:
- New search for: SP MAIK Nauka/Interperiodica
- New search for: Pleiades Publ.
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Place of publication:New York, NY
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Publication date:2012
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.00
- Further information on Basic classification
- New search for: 770/3480/8000
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Keywords:
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Classification:
BKL: 53.00 Elektrotechnik: Allgemeines Local classification TIB: 770/3480/8000 -
Source:
Table of contents – Volume 46, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1097
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Systematic features of the variation in the crystal-chemical, electrical, and surface physicochemical properties of $ A^{X} $$ B^{8 − X} $ materials on the energy of the inverse adsorption piezoelectric effectFedyaeva, O. A. et al. | 2012
- 1102
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Investigation of the promising thermoelectric compound $ CuAlO_{2} $ by the method of nuclear quadrupole resonance in CuMatukhin, V. L. / Khabibullin, I. H. / Shulgin, D. A. / Schmidt, S. V. / Terukov, E. I. et al. | 2012
- 1106
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Features of the conduction mechanisms of the n-HfNiSn semiconductor heavily doped with the Co acceptor impurityRomaka, V. A. / Rogl, P. / Stadnyk, Yu. V. / Romaka, V. V. / Hlil, E. K. / Krayovskyy, V. Ya. / Horyn, A. M. et al. | 2012
- 1114
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Conductivity of $ Se_{95} $$ As_{5} $ chalcogenide glassy semiconductor layers containing the $ EuF_{3} $ rare-earth impurity in high electric fieldsIsayev, A. I. / Mekhtieva, S. I. / Garibova, S. N. / Zeynalov, V. Z. et al. | 2012
- 1119
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Effect of parabenzoquinone adsorption on the magnetic properties of nanostructured siliconAntropov, I. M. / Semisalova, A. S. / Konstantinova, E. A. / Perov, N. S. / Kozlov, S. N. et al. | 2012
- 1122
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On the band gap in ($ In_{2} $$ S_{3} $)x($ CuIn_{5} $$ S_{8} $)1 − x alloy single crystalsBodnar, I. V. / Shatalova, V. V. et al. | 2012
- 1126
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Velocity-direction dependent transmission coefficient of electron through potential barrier grown on anisotropic semiconductorChen, Chun-Nan / Chang, Sheng-Hsiung / Su, Wei-Long / Jen, Jen-Yi / Li, Yiming et al. | 2012
- 1135
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Terahertz emission upon the interband excitation of GaN layersZakhar’in, A. O. / Bobylev, A. V. / Andrianov, A. V. et al. | 2012
- 1140
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Raman scattering in the $ Bi_{2} $($ Te_{0.9} $$ Se_{0.1} $)3 solid solution filmsAbdullaev, N. A. / Abdullaev, N. M. / Kerimova, A. M. / Kahramanov, S. Sh. / Bayramov, A. I. / Miyamoto, H. / Wakita, K. / Mamedov, N. T. / Nemov, S. A. et al. | 2012
- 1145
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Effect of annealing on the spectra of nuclear quadrupole resonance in gallium-indium selenides and characteristics of structures based on these materialsKovalyuk, Z. D. / Sydor, O. N. / Lastivka, G. I. / Khandozhko, A. G. et al. | 2012
- 1152
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Electrical properties of anisotype heterojunctions n-CdZnO/p-CdTeBrus, V. V. / Ilashchuk, M. I. / Khomyak, V. V. / Kovalyuk, Z. D. / Maryanchuk, P. D. / Ulyanytsky, K. S. et al. | 2012
- 1158
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Refined model for the current-voltage characteristics of quantum-well infrared photodetectorsKulikov, V. B. et al. | 2012
- 1163
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Rashba spin splitting and exchange enhancement of the g factor in InAs/AlSb heterostructures with a two-dimensional electron gasKrishtopenko, S. S. / Kalinin, K. P. / Gavrilenko, V. I. / Sadofyev, Yu. G. / Goiran, M. et al. | 2012
- 1171
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Nature of the electronic component of the thermal phase transition in $ VO_{2} $ filmsIlinskiy, A. V. / Kvashenkina, O. E. / Shadrin, E. B. et al. | 2012
- 1186
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On the effect of the spontaneous polarization of a SiC substrate on a buffer layer and quasi-free single-sheet grapheneDavydov, S. Yu. et al. | 2012
- 1190
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Electrical and gas-sensitive properties of a $ SnO_{2} $-based nanocomposite with multiwalled carbon nanotubesRembeza, S. I. / Shmatova, Yu. V. / Svistova, T. V. / Rembeza, E. S. / Kosheleva, N. N. et al. | 2012
- 1194
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n-Si bifacial concentrator solar cellUntila, G. G. / Kost, T. N. / Chebotareva, A. B. / Zaks, M. B. / Sitnikov, A. M. / Solodukha, O. I. / Shvarts, M. Z. et al. | 2012
- 1201
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Overheating of an optically triggered SiC thyristor during switch-on and turn-on spreadLevinshtein, M. E. / Mnatsakanov, T. T. / Yurkov, S. N. / Palmour, J. W. et al. | 2012
- 1207
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Thermal delocalization of carriers in semiconductor lasers (λ = 1010–1070 nm)Shashkin, I. S. / Vinokurov, D. A. / Lyutetskiy, A. V. / Nikolaev, D. N. / Pikhtin, N. A. / Rastegaeva, M. G. / Sokolova, Z. N. / Slipchenko, S. O. / Stankevich, A. L. / Shamakhov, V. V. et al. | 2012
- 1211
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Temperature dependence of the threshold current density in semiconductor lasers (λ = 1050–1070 nm)Shashkin, I. S. / Vinokurov, D. A. / Lyutetskiy, A. V. / Nikolaev, D. N. / Pikhtin, N. A. / Rudova, N. A. / Sokolova, Z. N. / Slipchenko, S. O. / Stankevich, A. L. / Shamakhov, V. V. et al. | 2012
- 1216
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Formation technology of through metallized holes to sources of high-power GaN/SiC high electron mobility transistorsOsipov, K. Yu. / Velikovskiy, L. E. et al. | 2012
- 1221
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Transformation of a SiC/por-SiC/$ TiO_{2} $ structure during rapid thermal annealingKonakova, R. V. / Kolomys, O. F. / Lytvyn, O. S. / Okhrimenko, O. B. / Strelchuk, V. V. / Svetlichnyi, A. M. / Linets, L. G. et al. | 2012