On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C) (English)
- New search for: Andreev, V. M.
- New search for: Malevskiy, D. A.
- New search for: Pokrovskiy, P. V.
- New search for: Rumyantsev, V. D.
- New search for: Chekalin, A. V.
- New search for: Andreev, V. M.
- New search for: Malevskiy, D. A.
- New search for: Pokrovskiy, P. V.
- New search for: Rumyantsev, V. D.
- New search for: Chekalin, A. V.
In:
Semiconductors
;
50
, 10
; 1356-1361
;
2016
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ISSN:
- Article (Journal) / Print
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Title:On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C)
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Contributors:Andreev, V. M. ( author ) / Malevskiy, D. A. ( author ) / Pokrovskiy, P. V. ( author ) / Rumyantsev, V. D. ( author ) / Chekalin, A. V. ( author )
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Published in:Semiconductors ; 50, 10 ; 1356-1361
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Publisher:
- New search for: Pleiades Publishing
- New search for: Pleiades Publ.
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Place of publication:New York, NY
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Publication date:2016
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 53.00
- Further information on Basic classification
- New search for: 770/3480/8000
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Keywords:
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Classification:
BKL: 53.00 Elektrotechnik: Allgemeines Local classification TIB: 770/3480/8000 -
Source:
Table of contents – Volume 50, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1273
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Energy spectrum of charge carriers in $ TlIn_{1–x} $$ Yb_{x} $$ Te_{2} $ solid solutionsAliev, F. F. / Agaeva, U. M. / Zarbaliev, M. M. et al. | 2016
- 1280
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First-principles calculations of the electronic and structural properties of GaSbCastaño-González, E.-E. / Seña, N. / Mendoza-Estrada, V. / González-Hernández, R. / Dussan, A. / Mesa, F. et al. | 2016
- 1287
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Study of the effect of doping on the temperature stability of the optical properties of germanium single crystalsPodkopaev, O. I. / Shimanskiy, A. F. / Kopytkova, S. A. / Filatov, R. A. / Golubovskaya, N. O. et al. | 2016
- 1291
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Some challenging points in the identification of defects in floating-zone n-type silicon irradiated with 8 and 15 MeV protonsEmtsev, V. V. / Abrosimov, N. V. / Kozlovskii, V. V. / Oganesyan, G. A. / Poloskin, D. S. et al. | 2016
- 1299
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Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μmBabichev, A. V. / Bousseksou, A. / Pikhtin, N. A. / Tarasov, I. S. / Nikitina, E. V. / Sofronov, A. N. / Firsov, D. A. / Vorobjev, L. E. / Novikov, I. I. / Karachinsky, L. Ya. et al. | 2016
- 1304
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UV and IR emission intensity in ZnO films, nanorods, and bulk single crystals doped with Er and additionally introduced impuritiesMezdrogina, M. M. / Vinogradov, A. Ya. / Kuzmin, R. V. / Levitski, V. S. / Kozanova, Yu. V. / Lyanguzov, N. V. / Chukichev, M. V. et al. | 2016
- 1312
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Self-synchronization of the modulation of energy-levels population with electrons in GaAs induced by picosecond pulses of probe radiation and intrinsic stimulated emissionAgeeva, N. N. / Bronevoi, I. L. / Zabegaev, D. N. / Krivonosov, A. N. et al. | 2016
- 1322
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Reflectance of a $ PbSb_{2} $$ Te_{4} $ crystal in a wide spectral rangeNemov, S. A. / Ulashkevich, Yu. V. / Povolotskii, A. V. / Khlamov, I. I. et al. | 2016
- 1327
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The C 1s core level spectroscopy of carbon atoms at the surface SiC/Si(111)-4° layer and Cs/SiC/Si(111)-4° interfaceBenemanskaya, G. V. / Dementev, P. A. / Kukushkin, S. A. / Lapushkin, M. N. / Osipov, A. V. / Senkovskiy, B. V. et al. | 2016
- 1333
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Dielectric properties of DNA oligonucleotides on the surface of silicon nanostructuresBagraev, N. T. / Chernev, A. L. / Klyachkin, L. E. / Malyarenko, A. M. / Emel’yanov, A. K. / Dubina, M. V. et al. | 2016
- 1338
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GaSb laser-power (λ = 1550 nm) converters: Fabrication method and characteristicsKhvostikov, V. P. / Sorokina, S. V. / Khvostikova, O. A. / Levin, R. V. / Pushnyi, B. V. / Timoshina, N. Kh. / Andreev, V. M. et al. | 2016
- 1344
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Effect of the chemical composition of Cu–In–Ga–Se layers on the photoconductivity and conversion efficiency of CdS/CIGSe solar cellsNovikov, G. F. / Tsai, Wei-Tao / Bocharov, K. V. / Rabenok, E. V. / Jeng, Ming-Jer / Chang, Liann-Be / Feng, Wu-Shiung / Ao, Jian-Ping / Sun, Yun et al. | 2016
- 1352
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Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structuresMusaev, A. M. et al. | 2016
- 1356
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On the main photoelectric characteristics of three-junction InGaP/InGaAs/Ge solar cells in a broad temperature range (–197°C ≤ T ≤ +85°C)Andreev, V. M. / Malevskiy, D. A. / Pokrovskiy, P. V. / Rumyantsev, V. D. / Chekalin, A. V. et al. | 2016
- 1362
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Theory of the power characteristics of quantum-well lasers with asymmetric barrier layers: Inclusion of asymmetry in electron- and hole-state fillingAsryan, L. V. / Zubov, F. I. / Kryzhanovskaya, N. V. / Maximov, M. V. / Zhukov, A. E. et al. | 2016
- 1369
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Efficiency droop in GaN LEDs at high injection levels: Role of hydrogenBochkareva, N. I. / Sheremet, I. A. / Shreter, Yu. G. et al. | 2016
- 1377
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Fabrication of a terahertz quantum-cascade laser with a double metal waveguide based on multilayer GaAs/AlGaAs heterostructuresKhabibullin, R. A. / Shchavruk, N. V. / Pavlov, A. Yu. / Ponomarev, D. S. / Tomosh, K. N. / Galiev, R. R. / Maltsev, P. P. / Zhukov, A. E. / Cirlin, G. E. / Zubov, F. I. et al. | 2016
- 1383
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effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basisTsatsulnikov, A. F. / Lundin, V. W. / Zavarin, E. E. / Yagovkina, M. A. / Sakharov, A. V. / Usov, S. O. / Zemlyakov, V. E. / Egorkin, V. I. / Bulashevich, K. A. / Karpov, S. Yu. et al. | 2016
- 1390
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Polarization characteristics of 850-nm vertical-cavity surface-emitting lasers with intracavity contacts and a rhomboidal oxide current apertureBobrov, M. A. / Maleev, N. A. / Blokhin, S. A. / Kuzmenkov, A. G. / Vasil’ev, A. P. / Blokhin, A. A. / Guseva, Yu. A. / Kulagina, M. M. / Zadiranov, Yu. M. / Troshkov, S. I. et al. | 2016
- 1396
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Study of the pulse characteristics of semiconductor lasers with a broadened waveguide at low temperatures (110–120 K)Veselov, D. A. / Shashkin, I. S. / Bobretsova, Yu. K. / Bakhvalov, K. V. / Lutetskiy, A. V. / Kapitonov, V. A. / Pikhtin, N. A. / Slipchenko, S. O. / Sokolova, Z. N. / Tarasov, I. S. et al. | 2016
- 1403
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Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral rangeKunitsyna, E. V. / Grebenshchikova, E. A. / Konovalov, G. G. / Andreev, I. A. / Yakovlev, Yu. P. et al. | 2016
- 1408
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Laser characteristics of an injection microdisk with quantum dots and its free-space outcoupling efficiencyZubov, F. I. / Kryzhanovskaya, N. V. / Moiseev, E. I. / Polubavkina, Yu. S. / Simchuk, O. I. / Kulagina, M. M. / Zadiranov, Yu. M. / Troshkov, S. I. / Lipovskii, A. A. / Maximov, M. V. et al. | 2016
- 1412
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On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nmNovikov, I. I. / Karachinsky, L. Ya. / Kolodeznyi, E. S. / Bougrov, V. E. / Kurochkin, A. S. / Gladyshev, A. G. / Babichev, A. V. / Gadzhiev, I. M. / Buyalo, M. S. / Zadiranov, Yu. M. et al. | 2016
- 1416
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Investigation of the fabrication processes of AlGaN/AlN/GaN НЕМТs with in situ $ Si_{3} $$ N_{4} $ passivationTomosh, K. N. / Pavlov, A. Yu. / Pavlov, V. Yu. / Khabibullin, R. A. / Arutyunyan, S. S. / Maltsev, P. P. et al. | 2016