Frequency-response equalization in integrated current amplifiers with collector—base cross coupling (English)
- New search for: Prokopenko, V. G.
- New search for: Prokopenko, V. G.
In:
Russian Microelectronics
;
29
, 5
; 299-302
;
2000
-
ISSN:
- Article (Journal) / Print
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Title:Frequency-response equalization in integrated current amplifiers with collector—base cross coupling
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Contributors:Prokopenko, V. G. ( author )
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Published in:Russian Microelectronics ; 29, 5 ; 299-302
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Publisher:
- New search for: Nauka/Interperiodica
- New search for: Pleiades Publ.
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Place of publication:New York, NY
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Publication date:2000
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ISSN:
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ZDBID:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
- New search for: 54.00
- Further information on Basic classification
- New search for: 770/5670/8000
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Keywords:
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Classification:
BKL: 54.00 Informatik: Allgemeines Local classification TIB: 770/5670/8000 -
Source:
Table of contents – Volume 29, Issue 5
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 285
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The hyperfine energy spectrum of31P donors in a silicon NMR quantum computerValiev, K. A. / Kokin, A. A. / Larionov, A. A. / Fedichkin, L. E. et al. | 2000
- 294
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Formation of local insulating regions in Si/Si—Ge structures by ion implantation with subsequent stain etchingStarkov, V. V. / Starostina, E. A. / Vyatkin, A. F. / Gorbatov, Yu. B. et al. | 2000
- 299
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Frequency-response equalization in integrated current amplifiers with collector—base cross couplingProkopenko, V. G. et al. | 2000
- 303
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Performance improvement of CCD image sensor arraysArutyunov, V. A. / Sorokin, O. V. et al. | 2000
- 307
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Charge transfer and structural—impurity complexes in the transition layer of the Si/SiO2 systemKrasnikov, G. Ya. / Zaitsev, N. A. / Matyushkin, I. V. et al. | 2000
- 311
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Fabrication of 0.5-μm structures by dry electron lithography and anisotropic plasma etchingAmirov, I. I. / Fedorov, V. A. et al. | 2000
- 316
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The energy of activation of electromigration in aluminum conductors tested by the drift-velocity methodKononenko, O. V. / Matveev, V. N. / Field, D. P. et al. | 2000
- 324
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Low-temperature annealing of SIMOX structures in an inhomogeneous temperature fieldRudakov, V. I. / Denisenko, Yu. I. / Mochalov, B. V. et al. | 2000
- 331
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An adsorption ellipsometric method for studying porous films and coatingsTolmachev, V. A. et al. | 2000
- 345
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Discrete electron states at the Si(100)/SiO2 interfaceKirillova, S. I. / Primachenko, V. E. / Serba, A. A. / Chernobai, V. A. et al. | 2000
- 349
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Chip training conditionsGorlov, M. I. / Kovalenko, P. Yu. et al. | 2000