The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System (English)
- New search for: Lomov, A. A.
- New search for: Imamov, R. M.
- New search for: Guk, A. V.
- New search for: Fedorov, Yu. V.
- New search for: Khabarov, Yu. V.
- New search for: Mokerov, V. G.
- New search for: Lomov, A. A.
- New search for: Imamov, R. M.
- New search for: Guk, A. V.
- New search for: Fedorov, Yu. V.
- New search for: Khabarov, Yu. V.
- New search for: Mokerov, V. G.
In:
Russian Microelectronics
;
29
, 6
; 362-367
;
2000
-
ISSN:
- Article (Journal) / Print
-
Title:The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs System
-
Contributors:Lomov, A. A. ( author ) / Imamov, R. M. ( author ) / Guk, A. V. ( author ) / Fedorov, Yu. V. ( author ) / Khabarov, Yu. V. ( author ) / Mokerov, V. G. ( author )
-
Published in:Russian Microelectronics ; 29, 6 ; 362-367
-
Publisher:
- New search for: Kluwer Academic Publishers-Plenum Publishers
- New search for: Pleiades Publ.
-
Place of publication:New York, NY
-
Publication date:2000
-
ISSN:
-
ZDBID:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
- New search for: 54.00
- Further information on Basic classification
- New search for: 770/5670/8000
-
Keywords:
-
Classification:
BKL: 54.00 Informatik: Allgemeines Local classification TIB: 770/5670/8000 -
Source:
Table of contents – Volume 29, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 355
-
Nonresonant Parametric Amplification of Signals in Neural Networks Through the Rhythms of a Central ProcessorBalkarei, Yu. I. / Naguchev, V. O. / Evtikhov, M. G. / Elinson, M. I. / Kochiev, T. V. et al. | 2000
- 362
-
The Influence of Individual Layer Parameters on the Photoluminescent Properties of InxGa1 – xAs/GaAs SystemLomov, A. A. / Imamov, R. M. / Guk, A. V. / Fedorov, Yu. V. / Khabarov, Yu. V. / Mokerov, V. G. et al. | 2000
- 368
-
Resistors Integrated into MCM-D Modules: Fabrication and PerformanceVorob'eva, A. I. / Moskvichev, K. V. et al. | 2000
- 376
-
Ion-Bombardment-Induced Decomposition of Nonequilibrium Solid Solution and the Formation of Periodic StructuresKrivelevich, S. A. et al. | 2000
- 380
-
A Helicon Plasma SourceBraginskii, O. V. / Vasil'eva, A. N. / Kovalev, A. S. et al. | 2000
- 391
-
High-Rate Deposition of Amorphous SiliconBudagyan, B. G. / Sherchenkov, A. A. / Berdnikov, A. E. / Chernomordik, V. D. et al. | 2000
- 397
-
Stabilization of Structure–Impurity and Electrophysical Parameters in the Si/SiO2 SystemZaitsev, N. Ya. / Krasnikov, G. Ya. / Matyushkin, I. V. et al. | 2000
- 401
-
Space Surface Parameters Determined from Fourier Transforms in Atomic Force MicroscopyArutyunov, P. A. / Tolstikhina, A. L. et al. | 2000
- 406
-
Identification of Trapping Effects and Ion Neutralization at the Insulator/Semiconductor Interface of MIS Structures from Dynamic Current–Voltage Characteristics of Ion DepolarizationGol'dman, E. I. / Zhdan, A. G. / Kukharskaya, N. F. et al. | 2000
- 413
-
Radical Modification of Gate Oxide by Lateral Gettering of Electroactive CentersUritskii, V. Ya. / Krylov, A. P. / Borisov, S. E. et al. | 2000
- 417
-
Electroactive Centers at the Outer Interface of an Ultrathin Oxide Layer and Their Effect on the Electrical Performance of Single-Crystal Silicon/Noncrystalline Oxide/Polysilicon StructuresUritskii, V. Ya. / Krylov, A. P. / Bushlyakov, A. A. et al. | 2000