Removal of spin degeneracy in SiGe-based nanostructures (English)
- New search for: Ganichev, Sergey D.
- New search for: Roessler, U.
- New search for: Prettl, Wilhelm
- New search for: Ivchenko, E. L.
- New search for: Bel'kov, Vassilij V.
- New search for: Neumann, R.
- New search for: Brunner, K.
- New search for: Abstreiter, Gerhard
- New search for: Ganichev, Sergey D.
- New search for: Roessler, U.
- New search for: Prettl, Wilhelm
- New search for: Ivchenko, E. L.
- New search for: Bel'kov, Vassilij V.
- New search for: Neumann, R.
- New search for: Brunner, K.
- New search for: Abstreiter, Gerhard
In:
Proc. SPIE
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5023
; 169
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2003
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:Removal of spin degeneracy in SiGe-based nanostructures
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Contributors:Ganichev, Sergey D. ( author ) / Roessler, U. ( author ) / Prettl, Wilhelm ( author ) / Ivchenko, E. L. ( author ) / Bel'kov, Vassilij V. ( author ) / Neumann, R. ( author ) / Brunner, K. ( author ) / Abstreiter, Gerhard ( author )
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Conference:10th International Symposium on Nanostructures: Physics and Technology ; 2003 ; Bellingham,WA,United States
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Published in:Proc. SPIE ; 5023 ; 169
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Publisher:
- New search for: SPIE
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Publication date:2003-06-11
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Control of charge and spin in novel semiconductor nanostructure devices (Invited Paper) [5023-02]Abstreiter, G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 1
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Control of charge and spin in novel semiconductor nanostructure devicesAbstreiter, Gerhard et al. | 2003
- 4
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Limits of 3D nanostructures fabricated by focused electron beam (FEB) induced deposition (Invited Paper) [5023-03]Hoffmann, P. / Utke, I. / Cicoira, F. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 4
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Limits of 3D nanostructures fabricated by focused electron beam (FEB) induced depositionHoffmann, P. / Utke, I. / Cicoira, F. et al. | 2003
- 11
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Monte Carlo simulation of self-organized quantum dot structures: crossover from kinetics to thermodynamicsMeixner, M. / Kunert, R. / Schoell, E. / Shchukin, Vitaly A. / Bimberg, Dieter et al. | 2003
- 11
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Monte Carlo simulation of self-organized quantum dot structures: crossover from kinetics to thermodynamics [5023-04]Meixner, M. / Kunert, R. / Scholl, E. / Shchukin, V. A. / Bimberg, D. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 15
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Room-temperature electroluminescence at 1.55 mum from InAs quantum dots grown on (001) InP by droplet hetero-epitaxy [5023-05]Oga, R. / Lee, W. S. / Fujiwara, Y. / Takeda, Y. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 15
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Room-temperature electroluminescence at 1.55 μm from InAs quantum dots grown on (001) InP by droplet hetero-epitaxyOga, R. / Lee, W. S. / Fujiwara, Y. / Takeda, Y. et al. | 2003
- 19
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Growth and structural characterization of ZnF2epitaxial layers on SiBanshchikov, A. G. / Kartenko, N. F. / Kaveev, A. K. / Moisseeva, M. M. / Sokolov, Nikolai S. et al. | 2003
- 19
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Growth and structural characterization of ZnF~2 epitaxial layers on Si [5023-06]Banshchikov, A. G. / Kartenko, N. F. / Kaveev, A. K. / Moisseeva, M. M. / Sokolov, N. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 23
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Nanostructures in porous substrate for mismatched film technology and lateral growth modelBobyl, A. V. / Konnikov, S. G. / Shantsev, D. V. / Sitnikova, A. A. / Suris, Robert A. / Ulin, V. P. et al. | 2003
- 23
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Nanostructures in porous substrate for mismatched film technology and lateral growth model [5023-07]Bobyl, A. V. / Konnikov, S. G. / Shantsev, D. V. / Sitnikova, A. A. / Suris, R. A. / Ulin, V. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 27
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2D→3D growth mode transition through Stranski-Krastanov mode during epitaxial growth [5023-08]Brunev, D. V. / Karpov, A. N. / Neizvestny, I. G. / Shwartz, N. L. / Yanovitskaya, Z. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 27
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2D yields 3D growth mode transition through Stranski-Krastanov mode during epitaxial growthBrunev, D. V. / Karpov, A. N. / Neizvestny, I. G. / Shwartz, Natalia L. / Yanovitskaya, Zoja S. et al. | 2003
- 31
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Pore sealing during epitaxy and annealing on Si(001) surfaceChemakin, A. V. / Neizvestny, I. G. / Shwartz, Natalia L. / Yanovitskaya, Zoja S. / Zverev, Alexej V. et al. | 2003
- 31
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Pore sealing during epitaxy and annealing on Si(001) surface [5023-09]Chemakin, A. V. / Neizvestny, I. G. / Shwartz, N. L. / Yanovitskaya, Z. S. / Zverev, A. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 34
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The impact of charge state on catalytic activity of metallic nanostructures [5023-10]Kozhevin, V. M. / Yavsin, D. A. / Zabelin, M. A. / Gurevich, S. A. / Yassievich, I. N. / Rostovshichikova, T. N. / Smirnov, V. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 34
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The impact of charge state on catalytic activity of metallic nanostructuresKozhevin, V. M. / Yavsin, D. A. / Zabelin, M. A. / Gurevich, Serguei A. / Yassievich, Irina N. / Rostovshichikova, T. N. / Smirnov, V. V. et al. | 2003
- 38
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The carrier's localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy [5023-11]Kryzhanovskaya, N. V. / Gladyshev, A. G. / Sizov, D. S. / Kovsh, A. R. / Tsatsul nikov, A. F. / Chi, J. Y. / Wang, J. S. / Wei, L. / Ustinov, V. M. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 38
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The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxyKryzhanovskaya, N. V. / Gladyshev, A. G. / Sizov, D. S. / Kovsh, Alexey R. / Tsatsul'nikov, Anrei F. / Chi, Jim Y. / Wang, Jyh-Shyang / Wei, Li-Chung / Ustinov, Victor M. et al. | 2003
- 42
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Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structuresLitvinov, D. / Rosenauer, A. / Gerthsen, D. / Kratzert, P. / Rabe, Michael / Henneberger, Fritz et al. | 2003
- 42
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Influence of ZnSe cap layer growth on the morphology and Cd distribution in CdSe/ZnSe quantum dot structures [5023-12]Litvinov, D. / Rosenauer, A. / Gerthsen, D. / Kratzert, P. / Rabe, M. / Henneberger, F. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 45
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Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO2surfacesNikiforov, Alexander I. / Cherepanov, V. A. / Pchelyakov, Oleg P. et al. | 2003
- 45
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Variation of in-plane lattices constant of Ge islands during MBE growth on Si and SiO~2 surfaces [5023-13]Nikiforov, A. I. / Cherepanov, V. A. / Pchelyakov, O. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 49
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High-mobility InAs/AlSb heterostructures for spintronics applicationsSadofyev, Yuri G. / Cao, Y. / Chaparro, S. / Ramamoorthy, A. / Naser, B. / Bird, J. P. / Johnson, S. R. / Zhang, Y.-H. et al. | 2003
- 49
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High-mobility InAs/AlSb heterostructures for spintronics applications [5023-14]Sadofyev, Y. G. / Cao, Y. / Chaparro, S. / Ramamoorthy, A. / Naser, B. / Bird, J. P. / Johnson, S. R. / Zhang, Y.-H. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 52
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Investigation of the formation of InAs QDs in a AlGaAs matrixSizov, D. S. / Kryzhanovskaya, N. V. / Gladyshev, A. G. / Samsonenko, Yu B. / Cirlin, G. E. / Polyakov, N. K. / Egorov, V. A. / Tonkih, A. A. / Musikhin, Yu G. / Tsatsul'nikov, Anrei F. et al. | 2003
- 52
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Investigation of the formation of InAs QDs in an AlGaAs matrix [5023-15]Sizov, D. S. / Kryzhanovskaya, N. V. / Gladyshev, A. G. / Samsonenko, Y. B. / Cirlin, G. E. / Polyakov, N. K. / Egorov, V. A. / Tonkih, A. A. / Musikhin, Y. G. / Tsatsul nikov, A. F. et al. | 2003
- 56
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Surface morphology evolution at early stages of CaF2(110) epitaxial growth on Si(001)Sokolov, Nikolai S. / Suturin, S. M. / Ulin, V. P. et al. | 2003
- 56
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Surface morphology evolution at early stages of CaF~2(110) epitaxial growth on Si(001) [5023-16]Sokolov, N. S. / Suturin, S. M. / Ulin, V. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 60
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Formation specifity of InAs/GaAs submonolayer superlatticeSoshnikov, Ilja P. / Volovik, Boris V. / Kovsh, Alexey R. / Zhukov, Alexey E. / Tsatsul'nikov, Anrei F. / Gorbenko, O. M. / Ledentsov, N. N. / Ustinov, Victor M. / Werner, P. / Zakharov, N. D. et al. | 2003
- 60
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Formation specifity of InAs/GaAs submonolayer superlattice [5023-17]Soshnikov, I. P. / Volovik, B. V. / Kovsh, A. R. / Zhukov, A. E. / Tsatsul nikov, A. F. / Gorbenko, O. M. / Ledentsov, N. N. / Ustinov, V. M. / Werner, P. / Zakharov, N. D. et al. | 2003
- 63
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Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structuresMonemar, Bo / Paskov, Plamen P. / Haratizadeh, H. / Pozina, Galina R. / Bergman, J. P. / Kamiyama, Satoshi / Iwaya, Motoaki / Amano, Hiroshi / Akasaki, Isamu et al. | 2003
- 63
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Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures [5023-18]Monemar, B. / Paskov, P. P. / Haratizadeh, H. / Pozina, G. R. / Bergman, J. P. / Kamiyama, S. / Iwaya, M. / Amano, H. / Akasaki, I. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 68
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Bandgap of hexagonal InN and InGaN alloys [5023-20]Davydov, V. Y. / Klochikhin, A. A. / Emtsev, V. V. / Sakharov, A. V. / Ivanov, S. V. / Vekshin, V. A. / Bechstedt, F. / Furthmuller, J. / Aderhold, J. / Graul, J. et al. | 2003
- 68
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Bandgap of hexagonal InN and InGaN alloysDavydov, V. Y. / Klochikhin, A. A. / Emtsev, Vadim V. / Sakharov, A. V. / Ivanov, S. V. / Vekshin, V. A. / Bechstedt, Friedhelm / Furthmueller, J. / Aderhold, Jochen / Graul, Jurgen et al. | 2003
- 72
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Production scale MOVPE reactors for electronic and optoelectronic applicationsProtzmann, Harry / Gerstenbrandt, Georg / Alam, Assadullah / Schoen, Oliver / Luenenbuerger, Markus / Dikme, Yilmaz / Kalisch, Holger / Jansen, Rolf H. / Heuken, Michael et al. | 2003
- 72
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Production scale MOVPE reactors for electronic and optoelectronic applications [5023-21]Protzmann, H. / Gerstenbrandt, G. / Alam, A. / Schoen, O. / Luenenbuerger, M. / Dikme, Y. / Kalisch, H. / Jansen, R. H. / Heuken, M. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 75
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High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructuresStrelchuk, V. V. / Valakh, Mikhail Y. / Vuychik, M. V. / Ivanov, S. V. / Kop'ev, Petr S. / Shubina, T. V. et al. | 2003
- 75
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High-efficient up-conversion of photoluminescence in CdSe/ZnSe nanostructures [5023-22]Strelchuk, V. V. / Valakh, M. Y. / Vuychik, M. V. / Ivanov, S. V. / Kop ev, P. S. / Shubina, T. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 79
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Photoluminescence study of CdTe/ZnTe ultrathin quantum wells grown by pulsed beam epitaxy [5023-23]Garcia-Rocha, M. / Hernandez-Calderon, I. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 79
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Photoluminescence study of CdTe/ZnTe ultra-thin quantum wells grown by pulsed beam epitaxyGarcia-Rocha, M. / Hernandez-Calderon, Isaac et al. | 2003
- 82
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Filling-factor dependence of magneto-luminescence in II-VI QWs with 2DEGGurevich, A. S. / Astakhov, G. V. / Suris, Robert A. / Kochereshko, Vladimir P. / Yakovlev, Dmitrii R. / Ossau, W. / Crooker, Scott A. / Karczewski, Greg et al. | 2003
- 82
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Filling-factor dependence of magneto-luminescence in II-VI QWs with 2DEG [5023-24]Gurevich, A. S. / Astakhov, G. V. / Suris, R. A. / Kochereshko, V. P. / Yakovlev, D. R. / Ossau, W. / Crooker, S. A. / Karczewski, G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 86
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Influence of high excitation on excitonic states in GaN/AlGaN quantum wellsNelson, D. K. / Jacobson, M. A. / Grandjean, Nicolas / Massies, J. / Bigenwald, P. / Kavokin, Alexey V. et al. | 2003
- 86
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Influence of high excitation on excitonic states in GaN/AlGaN quantum wells [5023-25]Nelson, D. K. / Jacobson, M. A. / Grandjean, N. / Massies, J. / Bigenwald, P. / Kavokin, A. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 90
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Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experimentsShapoval, S. / Gurtovoi, V. / Kovalchuk, A. / Eastman, Lester F. / Vertjachih, A. / Gaquiere, Christophe / Theron, David et al. | 2003
- 90
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Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments [5023-26]Shapoval, S. / Gurtovoi, V. / Kovalchuk, A. / Eastman, L. F. / Vertjachih, A. / Gaquiere, C. / Theron, D. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 94
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Electrodynamics of left-handed materialsEfros, Alexander L. / Pokrovsky, A. L. et al. | 2003
- 94
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Electrodynamics of left-handed materials [5023-27]Efros, A. L. / Pokrovsky, A. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 97
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The control of light by the phase transition in opal-VO~2 photonic crystals [5023-28]Golubev, V. G. / Il inskii, A. V. / Kurdyukov, D. A. / Medvedev, A. V. / Pevtsov, A. B. / Scherbakov, A. V. / Sel kin, A. V. / Shadrin, E. B. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 97
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The control of light by the phase transition in opal-VO2photonic crystalsGolubev, V. G. / Il'inskii, A. V. / Kurdyukov, D. A. / Medvedev, Andrei V. / Pevtsov, Alexander B. / Scherbakov, A. V. / Sel'kin, A. V. / Shadrin, E. B. et al. | 2003
- 101
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Fabrication of square spiral photonic crystals by glancing angle deposition [5023-29]Kennedy, S. R. / Brett, M. J. / Toader, O. / John, S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 101
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Fabrication of square spiral photonic crystals by glancing angle depositionKennedy, Scott R. / Brett, Michael J. / Toader, O. / John, Sajeev et al. | 2003
- 105
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Influence of temperature and free carries on four-wave mixing in semiconductor microcavities [5023-30]Makhonin, M. N. / Krizhanovskii, D. N. / Dremin, A. N. / Tartakovskii, A. I. / Kulakovskii, V. D. / Gippius, N. A. / Skolnick, M. S. / Roberts, J. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 105
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Influence of temperature and free carries on four-wave mixing in semiconductor microcavitiesMakhonin, M. N. / Krizhanovskii, D. N. / Dremin, A. N. / Tartakovskii, A. I. / Kulakovskii, V. D. / Gippius, N. A. / Skolnick, Maurice S. / Roberts, John S. et al. | 2003
- 109
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Three-dimensional Bragg diffraction in growth-disordered opals [5023-31]Baryshev, A. V. / Kaplyanskii, A. A. / Kosobukin, V. A. / Limonov, M. F. / Samusev, K. B. / Usvyat, D. E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 109
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Three-dimensional Bragg diffraction in growth-disordered opalsBaryshev, A. V. / Kaplyanskii, Alexander A. / Kosobukin, Vladimir A. / Limonov, M. F. / Samusev, K. B. / Usvyat, D. E. et al. | 2003
- 113
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Coherent interpolariton scattering on moving gratings in microcavity with 25 nm GaAs/AlGaAs single quantum wellBirkedal, D. / Lyssenko, Vadim G. / Hvam, Jorn M. et al. | 2003
- 113
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Coherent interpolariton scattering on moving gratings in microcavity with 25 nm GaAs/AlGaAs single quantum well [5023-32]Birkedal, D. / Lyssenko, V. G. / Hvam, J. M. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 116
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Local polariton modes in planar optical microcavitiesDeych, L. I. / Lisyansky, A. A. et al. | 2003
- 116
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Local polariton modes in planar optical microcavities [5023-33]Deych, L. I. / Lisyansky, A. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 120
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Whispering gallery modes in glass microspheres made by simple technologyGaikov, D. V. / Kolobkova, Elene V. / Lipovskii, A. A. / Melehin, V. G. / Petrikov, Vladimir G. et al. | 2003
- 120
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Whispering gallery modes in glass microspheres made by simple technology [5023-34]Gaikov, D. V. / Kolobkova, E. V. / Lipovskii, A. A. / Melehin, V. G. / Petrikov, V. G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 123
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Three-dimensional GaN photonic crystals for visible spectral range [5023-35]Gajiev, G. / Golubev, V. G. / Kurdyukov, D. A. / Pevtsov, A. B. / Travnikov, V. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 123
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Three-dimensional GaN photonic crystals for visible spectral rangeGajiev, G. / Golubev, V. G. / Kurdyukov, D. A. / Pevtsov, Alexander B. / Travnikov, V. V. et al. | 2003
- 127
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Optical and magnetic-resonance spectroscopy of single moleculesSchmidt, J. et al. | 2003
- 127
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Optical and magnetic-resonance spectoscopy of single molecules (Invited Paper) [5023-37]Schmidt, J. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 134
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Magneto-optical and cyclotron resonance study of semiconductor nanostructures in very high magnetic fieldsMiura, Noboru / Ikaida, T. / Uchida, K. / Yasuhira, T. / Ono, K. / Matsuda, Y. H. / Springholz, G. / Pinczolits, M. / Bauer, G. / Kurtz, E. et al. | 2003
- 134
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Magneto-optical and cyclotron resonance study of semiconductor nanostructures in very high magnetic fields (Invited Paper) [5023-38]Miura, N. / Ikaida, T. / Uchida, K. / Yasuhira, T. / Ono, K. / Matsuda, Y. H. / Springholz, G. / Pinczolits, M. / Bauer, G. / Kurtz, E. et al. | 2003
- 140
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Many-particle interaction in the tunneling nanostructures and STM/STS measurementsArseev, P. I. / Maslova, Natalia S. / Panov, Vladimir I. / Savinov, Sergei V. et al. | 2003
- 140
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Many-particle interaction in the tunneling nanostructures and STM/STS measurements [5023-39]Arseev, P. I. / Maslova, N. S. / Panov, V. I. / Savinov, S. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 143
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Study of high-power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopyAnkudinov, A. / Titkov, A. N. / Evtikhiev, Vadim P. / Kotelnikov, Eugeny Y. / Bazhenov, N. / Zegrya, Georgy G. / Huhtinen, H. / Laiho, R. et al. | 2003
- 143
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Study of high-power GaAs-based laser diode operation and failure by cross-sectional electrostatic force microscopy [5023-40]Ankudinov, A. / Titkov, A. N. / Evtikhiev, V. P. / Kotelnikov, E. Y. / Bazhenov, N. / Zegrya, G. G. / Huhtinen, H. / Laiho, R. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 146
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Raman studies as a tool for characterization of the strained hexagonal GaN/Al~xGa~1~-~xN superlattices [5023-41]Davydov, V. Y. / Smirnov, A. N. / Goncharuk, I. N. / Kyutt, R. N. / Scheglov, M. P. / Baidakova, M. V. / Lundin, W. V. / Zavarin, E. E. / Smirnov, M. B. / Karpov, S. V. et al. | 2003
- 146
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Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlatticesDavydov, V. Y. / Smirnov, A. N. / Goncharuk, I. N. / Kyutt, R. N. / Scheglov, M. P. / Baidakova, M. V. / Lundin, W. V. / Zavarin, E. E. / Smirnov, M. B. / Karpov, S. V. et al. | 2003
- 150
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Plasma diagnostics of Ge-clusters in Si~1~-~xGe~x mixed crystals [5023-42]Gordeev, Y. S. / Mikoushkin, V. M. / Brysgalov, V. V. / Zabrodskii, A. G. / Alekseenko, M. V. / Grimmeiss, H. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 150
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Plasma diagnostics of Ge-clusters in Si1-xGexmixed crystalsGordeev, Yu. S. / Mikoushkin, Valery M. / Brysgalov, V. V. / Zabrodskii, Andrej G. / Alekseenko, M. V. / Grimmeiss, H. et al. | 2003
- 154
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Time-resolved nonlinear surface plasmon opticsLozovik, Yurii E. / Merkulova, S. P. / Nazarov, M. M. / Shkurinov, Aleksandr P. / Masselin, P. et al. | 2003
- 154
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Time-resolved nonlinear surface plasmon optics [5023-43]Lozovik, Y. E. / Merkulova, S. P. / Nazarov, M. M. / Shkurinov, A. P. / Masselin, P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 157
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Quanum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloys [5023-44]Mintairov, A. M. / Blagnov, P. A. / Merz, J. L. / Ustinov, V. M. / Vlasov, A. S. / Kovsh, A. R. / Wang, J. S. / Wei, L. / Chi, J. Y. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 157
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Quantum-dot-like composition fluctuations in near-field magneto-photoluminescence spectra of InGaAsN alloysMintairov, Alexander M. / Blagnov, P. A. / Merz, James L. / Ustinov, Victor M. / Vlasov, A. S. / Kovsh, Alexey R. / Wang, Jyh-Shyang / Wei, Li-Chung / Chi, Jim Y. et al. | 2003
- 161
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Raman sudy of Ge quantum dots formed by submonolayer Ge coverages in Ge/Si superlatticesVolodin, Vladimir A. / Orehov, D. A. / Efremov, M. D. / Sachkov, V. A. / Kolesov, B. A. / Zakharov, N. D. / Egorov, V. A. / Cirlin, G. E. / Werner, P. et al. | 2003
- 161
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Raman study of Ge quantum dots formed by submonolayer Ge coverages in Ge/Si superlattices [5023-45]Volodin, V. A. / Orehov, D. A. / Efremov, M. D. / Sachkov, V. A. / Kolesov, B. A. / Zakharov, N. D. / Egorov, V. A. / Cirlin, G. E. / Werner, P. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
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Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3-1.7 μm wavelength rangeDrozdov, Yu. N. / Krasil'nik, Z. F. / Lobanov, D. N. / Novikov, A. V. / Valakh, Mikhail Y. / Vostokov, N. V. / Yablonsky, A. N. / Yukhymchuk, V. A. et al. | 2003
- 165
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Room-temperature photoluminescence of GeSi/Si(001) self-assembled islands in a 1.3- to 1.7-mum wavelength range [5023-46]Drozdov, Y. N. / Krasil nik, Z. F. / Lobanov, D. N. / Novikov, A. V. / Valakh, M. Y. / Vostokov, N. V. / Yablonsky, A. N. / Yukhymchuk, V. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 169
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Removal of spin degeneracy in SiGe-based nanostructuresGanichev, Sergey D. / Roessler, U. / Prettl, Wilhelm / Ivchenko, E. L. / Bel'kov, Vassilij V. / Neumann, R. / Brunner, K. / Abstreiter, Gerhard et al. | 2003
- 169
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Removal of spin degeneracy in SiGe-based nanostructures [5023-47]Ganichev, S. D. / Rossler, U. / Prettl, W. / Ivchenko, E. L. / Bel kov, V. V. / Neumann, R. / Brunner, K. / Abstreiter, G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Hole transport in Ge/Si quantum dot field-effect transistorsYakimov, Andrei I. / Dvurechenskii, A. V. / Kirienko, V. V. / Nikiforov, Alexander I. et al. | 2003
- 172
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Hole transport in Ge/Si quantum dot field-effect transistors [5023-48]Yakimov, A. I. / Dvurechenskii, A. V. / Kirienko, V. V. / Nikiforov, A. I. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 176
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Growth and characterization of Si-Si1-xGex-GaAs heterostructure with InGaAs quantum dotsBurbaev, Timur M. / Kazakov, I. P. / Kurbatov, Vadim A. / Rzaev, M. M. / Vdovin, V. I. et al. | 2003
- 176
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Growth and characterization of Si-Si~1~-~xGe~x-GaAs heterostructure with InGaAs quantum dots [5023-49]Burbaev, T. M. / Kazakov, I. P. / Kurbatov, V. A. / Rzaev, M. M. / Vdovin, V. I. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 179
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Surface polaritons at nanoporous carbon-silicon interfaceIpatova, I. P. / Proshina, O. V. / Benedek, G. et al. | 2003
- 179
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Surface polaritons at nanoporous carbon-silicon interface [5023-50]Ipatova, I. P. / Proshina, O. V. / Benedek, G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 183
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Shallow acceptors in Si/SiGe QW heterostructuresKozlov, D. V. / Aleshkin, Vladimir Y. / Gavrilenko, Vladimir I. et al. | 2003
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Shallow acceptors in Si/SiGe QW heterostructures [5023-51]Kozlov, D. V. / Aleshkin, V. Y. / Gavrilenko, V. I. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 186
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About the phosphorus sensitization of silicon quantum dots in SiO~2 photoluminescence [5023-52]Tetelbaum, D. I. / Burdov, V. A. / Mikhaylov, A. N. / Trushin, S. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 186
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About the phosphorus sensitization of silicon quantum dots in SiO2photoluminescenceTetelbaum, David I. / Burdov, V. A. / Mikhaylov, A. N. / Trushin, Sergey A. et al. | 2003
- 190
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Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge1-xSix/Ge/p-Ge1-xSixquantum wellYakunin, M. V. / Alshanskii, G. A. / Arapov, Yu G. / Neverov, V. N. / Kuznetsov, O. A. et al. | 2003
- 190
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Parallel magnetic field induced strong negative magnetoresistance in a wide p-Ge~1~-~xSi~x/Ge/p-Ge~1~-~xSi~x quantum well [5023-53]Yakunin, M. V. / Alshanskii, G. A. / Arapov, Y. G. / Neverov, V. N. / Kuznetsov, O. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 194
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New optical phenomena in Bose-condensed exciton system in quantum wells [5023-54]Lozovik, Y. E. / Ovchinnikov, I. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 194
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New optical phenomena in Bose-condensed exciton system in quantum wellsLozovik, Yurii E. / Ovchinnikov, I. V. et al. | 2003
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Spectral speckle analysis: a new method to measure coherence and dephasing in semiconductor nanostructuresKocherscheidt, G. / Langbein, Wolfgang W. / Zimmermann, Roland et al. | 2003
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Spectral speckle analysis: a new method to measure coherence and dephasing in semiconductor nanostructures [5023-55]Kocherscheidt, G. / Langbein, W. W. / Zimmermann, R. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 201
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Resonant states of carbon acceptor in p-InGaAs/GaAs delta-doped quantum well heterostructure [5023-56]Gaponova, D. M. / Aleshkin, V. Y. / Gavrilenko, V. I. / Kozlov, D. V. / Shastin, V. N. / Zhukavin, R. K. / Zvonkov, B. N. / Uskova, E. A. / Hovenier, J. N. / van der Meer, A. F. G. et al. | 2003
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Resonant states of carbon acceptor in p-InGaAs/GaAs-doped quantum well heterostructureGaponova, D. M. / Aleshkin, Vladimir Y. / Gavrilenko, Vladimir I. / Kozlov, D. V. / Shastin, V. N. / Zhukavin, R. K. / Zvonkov, B. N. / Uskova, E. A. / Hovenier, J. N. / van der Meer, Alexander F. G. et al. | 2003
- 204
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Structure effects on inter- and intraband scattering of electrons in GaAs/Al~xGa~1~-~xAs and strained In~xGa~1~-~xAs/GaAs quantum wells [5023-57]Lee, H. C. / Sun, K. W. / Lee, C. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 204
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Structure effects on inter- and intra-band scattering of electrons in GaAs/AlxGa1-xAs and strained InxGa1-xAs/GaAs quantum wellsLee, H. C. / Sun, Kien Wen / Lee, Chien-Ping et al. | 2003
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Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wellsAleshkin, Vladimir Y. / Gaponova, D. M. / Revin, Dmitry G. / Vorobjev, Leonid E. / Danilov, S. N. / Panevin, Vadim Y. / Fedosov, N. K. / Firsov, D. A. / Shalygin, V. A. / Andreev, Aleksey D. et al. | 2003
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Light absorption and emission in InAs/GaAs quantum dots and stepped quantum wells [5023-58]Aleshkin, V. Y. / Gaponova, D. M. / Revin, D. G. / Vorobjev, L. E. / Danilov, S. N. / Panevin, V. Y. / Fedosov, N. K. / Firsov, D. A. / Shalygin, V. A. / Andreev, A. D. et al. | 2003
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Optical and transport properties of p-type heterojunctions with lateral surface superlattice in perpendicular magnetic fieldDemikhovskii, V. Y. / Khomitsky, D. V. et al. | 2003
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Optical and transport properties of p-type heterojunctions with lateral surface superlattice in perpendicular magnetic field [5023-59]Demikhovskii, V. Y. / Khomitsky, D. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 216
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Friedel oscillations of the magnetic field penetration in systems with spatial quantization [5023-60]Entin, M. V. / Magarill, L. I. / Mahmoodian, M. M. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Friedel oscillations of the magnetic field penetration in systems with spatial quantizationEntin, Matvey V. / Magarill, L. I. / Mahmoodian, M. M. et al. | 2003
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Synchronization of dipole domains in GHz-driven superlattices [5023-61]Jappsen, A.-K. / Amann, A. / Wacker, A. / Schomburg, E. / Scholl, E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Synchronization of dipole domains in GHz-driven superlatticesJappsen, A. K. / Amann, A. / Wacker, A. / Schomburg, Ekkehard / Schoell, E. et al. | 2003
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Separate electron-hole confinement in composite InAsyP1-y/GaxIn1-xAs quantum wellsSilov, A. Y. / Aneeshkumar, Balakrishnan N. / Leys, M. R. / Averkiev, N. S. / Christianen, P. C. M. / Wolter, Joachim H. et al. | 2003
- 224
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Separate electron-hole confinement in composite InAs~yP~1~-~y/Ga~xIn~1~-~xAs quantum wells [5023-62]Silov, A. Y. / Aneeshkumar, B. N. / Leys, M. R. / Averkiev, N. S. / Christianen, P. C. M. / Wolter, J. H. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 227
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Auger recombination in strained InGaAsP quantum wells with E~g=0.7-1.6 eV [5023-63]Sokolova, Z. N. / Gurylev, D. I. / Pikhtin, N. A. / Tarasov, I. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 227
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Auger recombination in strained InGaAsP quantum wells withEg= 0.7-1.6 eVSokolova, Z. N. / Gurylev, D. I. / Pikhtin, Nikita A. / Tarasov, Ilya S. et al. | 2003
- 231
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Effective mass anisotropy of T-electrons in GaAs/AlGaAs quantum well with InAs layerVdovin, E. E. / Khanin, Yu N. / Dubrovskii, Yu V. / Eaves, Laurence / Main, P. C. / Henini, Mohamed / Hill, Geoff et al. | 2003
- 231
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Effective mass anisotropy of Γ-electrons in GaAs/AlGaAs quantum well with InAs layer [5023-64]Vdovin, E. E. / Khanin, Y. N. / Dubrovskii, Y. V. / Eaves, L. / Main, P. C. / Henini, M. / Hill, G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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On the zero phonon line homogeneous broadening in semiconductor QDsGoupalov, Serguei V. / Suris, Robert A. / Lavallard, P. / Citrin, David S. et al. | 2003
- 235
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On the zero phonon line homogeneous broadening in semiconductor QDs [5023-67]Goupalov, S. V. / Suris, R. A. / Lavallard, P. / Citrin, D. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 239
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Optical memory concepts with self-organized quantum dots: material systems and energy-selective charging [5023-69]Kapteyn, C. / Ehehalt, J. / Heitz, R. / Bimberg, D. / Cirlin, G. E. / Ustinov, V. M. / Ledentsov, N. N. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Optical memory concepts with self-organized quantum dots-material systems and energy-selective chargingKapteyn, C. / Ehehalt, J. / Heitz, R. / Bimberg, Dieter / Cirlin, G. E. / Ustinov, Victor M. / Ledentsov, N. N. et al. | 2003
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Escape of carriers photoexcited in self-organized InAs/GaAs quantum dotsBrunkov, P. N. / Patane, A. / Levin, A. / Eaves, Laurence / Main, P. C. / Musikhin, Yu G. / Volovik, Boris V. / Zhukov, Alexey E. / Ustinov, Victor M. / Konnikov, S. G. et al. | 2003
- 243
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Escape of carriers photoexcited in self-organized InAs/GaAs quantum dots [5023-70]Brunkov, P. N. / Patane, A. / Levin, A. / Eaves, L. / Main, P. C. / Musikhin, Y. G. / Volovik, B. V. / Zhukov, A. E. / Ustinov, V. M. / Konnikov, S. G. et al. | 2003
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Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidences [5023-71]Baranov, A. V. / Davydov, V. G. / Fedorov, A. O. / Ren, H.-W. / Sugou, S. / Masumoto, Y. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Heterostructure optical phonons in dynamics of quantum dot electronic excitations: new experimental evidencesBaranov, A. V. / Davydov, V. G. / Fedorov, Anatoli V. / Ren, H.-W. / Sugou, Shigeo / Masumoto, Yasuaki et al. | 2003
- 251
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Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structures [5023-72]Bairamov, B. H. / Zakharchenya, B. P. / Toporov, V. V. / Voitenko, V. A. / Bairamov, F. B. / Henini, M. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Inelastic inter-valence-band scattering of photoexcited holes in quantum dot structuresBairamov, B. H. / Zakharchenya, B. P. / Toporov, V. V. / Voitenko, V. A. / Bairamov, F. B. / Henini, Mohamed et al. | 2003
- 255
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Time-resolved luminescence of self-assembled CdSe/ZnSe quantum dots [5023-73]Dneprovskii, V. S. / Shaligina, O. / Zhukov, E. A. / Evtikhiev, V. P. / Kochereshko, V. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Time-resolved luminescence of self-assembled CdSe/ZnSe quantum dotsDneprovskii, V. S. / Shaligina, O. / Zhukov, E. A. / Evtikhiev, Vadim P. / Kochereshko, Vladimir P. et al. | 2003
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Influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaSa quantum dotsGaisin, V. A. / Akopyan, A. K. / Kulinkin, B. S. / Novikov, B. V. / Petrov, V. N. / Ustinov, Victor M. / Cirlin, G. E. et al. | 2003
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The influence of temperature and hydrostatic pressure on luminescence spectra of InAs/GaSa quantum dots [5023-75]Gaisin, V. A. / Akopyan, A. K. / Kulinkin, B. S. / Novikov, B. V. / Petrov, V. N. / Ustinov, V. M. / Cirlin, G. E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Auger type relaxation of excitons in self assembled quantum dots via resonance scatteringLarkin, I. / Vagov, A. et al. | 2003
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Auger type relaxation of excitons in self-assembled quantum dots via resonance scattering [5023-76]Larkin, I. / Vagov, A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Soft collective charge mode in a 1D electron systemSablikov, Vladimir A. / Gindikin, Yasha et al. | 2003
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Soft collective charge mode in a 1D electron system [5023-77]Sablikov, V. A. / Gindikin, Y. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 267
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Effects of accidental microconstriction on the quantized conductance in long wires [5023-78]Starikov, A. A. / Yakimenko, I. I. / Berggren, K.-F. / Graham, A. C. / Thomas, K. J. / Pepper, M. / Simmons, M. Y. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Effects of accidental microconstriction on the quantized conductance in long wiresStarikov, A. A. / Yakimenko, I. I. / Berggren, Karl-Fredrik / Graham, A. C. / Thomas, K. J. / Pepper, Michael / Simmons, M. Y. et al. | 2003
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Zero spin splitting of Landau levels in 2D electron systems: role of sign of Lande factorTakhtamirov, E. E. / Volkov, V. A. et al. | 2003
- 271
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Zero spin splitting of Landau levels in 2D electron systems: role of sign of Lande factor [5023-79]Takhtamirov, E. E. / Volkov, V. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 275
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Persistent high-frequency hopping photoconductivity in GaAs/AlGaAs heterostructures in the quantum Hall regimeDrichko, I. L. / Diakonov, A. M. / Smirnov, I. Y. / Preobrazhenskii, V. V. / Toropov, Aleksandr I. / Galperin, Yuri M. et al. | 2003
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Persistent high-frequency hopping photoconductivity in GaAs/AlGaAs heterostructures in the quantum Hall regime [5023-80]Drichko, I. L. / Diakonov, A. M. / Smirnov, I. Y. / Preobrazhenskii, V. V. / Toropov, A. I. / Galperin, Y. M. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 279
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Quantum interface in magneto-oscillation phenomena in two-dimensional electron gasAverkiev, N. S. / Tarasenko, S. A. et al. | 2003
- 279
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Quantum interface in magneto-oscillation phenomena in two-dimensional electron gas [5023-81]Averkiev, N. S. / Tarasenko, S. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 282
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Kinetic mechanism of current stratification in two-dimensional structuresKachorovskii, V. Y. / Lyubinskiy, I. S. / Tsendin, L. D. et al. | 2003
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Kinetic mechanism of current stratification in two-dimensional structures [5023-82]Kachorovskii, V. Y. / Lyubinskiy, I. S. / Tsendin, L. D. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 286
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Many-body lines in tunneling spectra of Al/delta-GaAs junctions near resonant polaron threshold [5023-83]Kotel nikov, I. N. / Dizhur, S. E. / Shtrom, F. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Many-body lines in tunneling spectra of Al/-GaAs junctions near resonant polaron thresholdKotel'nikov, I. N. / Dizhur, S. E. / Shtrom, F. V. et al. | 2003
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Breakdown of the integer quantum Hall effect: a microscopic model with a hydronamical analogy [5023-84]Martin, A. M. / Eaves, L. / Benedict, K. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Breakdown of the interger quantum Hall effect: a microscopic model with a hydronamical analogyMartin, A. M. / Eaves, Laurence / Benedict, K. A. et al. | 2003
- 294
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Pinning of Landau levels in open two-dimensional electron systems [5023-85]Popov, V. G. / Dubrovskii, Y. V. / Vdovin, E. E. / Khanin, Y. N. / Portal, J.-C. / Maude, D. K. / Andersson, T. G. / Wang, S. M. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 294
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Pinning of Landau levels in open two dimensional electron systemsPopov, V. G. / Dubrovskii, Yu V. / Vdovin, E. E. / Khanin, Yu N. / Portal, Jean-Claude / Maude, D. K. / Andersson, Thorvald G. / Wang, S. M. et al. | 2003
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Ultra-high coulomb energy in position controlled grown carbon nanotubeMatsumoto, Kazuhiko et al. | 2003
- 298
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Ultrahigh coulomb energy in position-controlled grown carbon nanotube [5023-86]Matsumoto, K. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 302
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Ti/TiOx/Ti laternal tunnel junctions for single electron transistorLitvin, L. V. / Kolosanov, Vladimir / Baksheev, D. G. / Tkachenko, V. A. / Mogilnikov, K. P. / Cherkov, A. G. / Aseev, A. L. et al. | 2003
- 302
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Ti/TiO~x/Ti laternal tunnel junctions for single electron transistor [5023-87]Litvin, L. V. / Kolosanov, V. A. / Baksheev, D. G. / Tkachenko, V. A. / Mogilnikov, K. P. / Cherkov, A. G. / Aseev, A. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 306
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Current-induced cooling of nanostructuresDogonkin, Eugen B. / Zegrya, Georgy G. et al. | 2003
- 306
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Current-induced cooling of nanostructures [5023-88]Dogonkin, E. B. / Zegrya, G. G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 310
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Segment of inhomogeneous mesoscopic loop as a dc power sourceDubonos, S. V. / Kuznetsov, Vladimir / Nikulov, A. V. et al. | 2003
- 310
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Segment of inhomogeneous mesoscopic loop as a dc power source [5023-89]Dubonos, S. V. / Kuznetsov, V. I. / Nikulov, A. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 313
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Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistorGrekhov, I. / Delimova, L. / Liniichuk, I. / Mashovets, D. / Veselovsky, I. et al. | 2003
- 313
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Strongly modulated conduction in Ag/PLZT/LSCO ferroelectronic field-effect transistor [5023-90]Grekhov, I. / Delimova, L. / Liniichuk, I. / Mashovets, D. / Veselovsky, I. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 316
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Operating modes of the Auger-transistor and the photo-field detectors under strong electric fieldKalganov, V. D. / Mileshkina, N. V. / Ostroumova, E. V. et al. | 2003
- 316
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Operating modes of the Auger-transistor and photo-field detectors under strong electric field [5023-91]Kalganov, V. D. / Mileshkina, N. V. / Ostroumova, E. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 320
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Origin of the 1/f noise in GaN-based HFETs: Is it tunneling?Levinshtein, Michael E. et al. | 2003
- 320
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The origin of the 1/f noise in GaN-based HFETs: Is it tunneling? [5023-92]Levinshtein, M. E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 323
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Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulators [5023-93]Pires, M. P. / Tribuzy, C. V.-B. / Yavich, B. / Souza, P. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
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Optimization of InGaAs/InAlAs strained multiple quantum wells for amplitude modulatorsPires, Maurico P. / Tribuzy, Christiana V. / Yavich, Boris / Souza, P. L. et al. | 2003
- 327
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Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systems [5023-94]Suyatin, D. B. / Soldatov, E. S. / Maximov, I. A. / Montelius, L. / Samuelson, L. / Khomutov, G. B. / Gubin, S. P. / Sergeev-Cherenkov, A. N. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 327
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Metal nanoelectrodes for molecular transistor and investigation of electron transport in molecular systemsSuyatin, D. B. / Soldatov, E. S. / Maximov, Ivan / Montelius, Lars / Samuelson, Lars / Khomutov, G. B. / Gubin, S. P. / Sergeev-Cherenkov, A. N. et al. | 2003
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From bistability to spatio-temporal chaos in a resonant-tunneling diodeUnkelbach, J. / Amann, A. / Rodin, P. / Schoell, E. et al. | 2003
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From bistability to spatiotemporal chaos in a resonant-tunneling diode [5023-95]Unkelbach, J. / Amann, A. / Rodin, P. / Scholl, E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 334
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Temperature-dependent homogenous broadening and gain recovery dynamics in InGaAs quantum dots (Invited Paper) [5023-96]Borri, P. / Langbein, W. W. / Schneider, S. / Woggon, U. / Sellin, R. L. / Ouyang, D. N. / Bimberg, D. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 334
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Temperature dependence homogeneous broadening and gain recovery dynamics in InGaAs quantum dotsBorri, P. / Langbein, Wolfgang W. / Schneider, S. / Woggon, Ulrike / Sellin, Roman / Ouyang, Dongxun / Bimberg, Dieter et al. | 2003
- 340
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Interface luminescence and lasing at a type II single broken-gap heterojunctionMoiseev, Konstantin D. / Mikhailova, Maya P. / Yakovlev, Yury P. / Krier, Anthony et al. | 2003
- 340
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Interface luminescence and lasing at a type II single broken-gap heterojunction [5023-97]Moiseev, K. D. / Mikhailova, M. P. / Yakovlev, Y. P. / Krier, A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 343
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Ultrafast switch-off of an electrically pumped InAs/GaAs quantum dot laser [5023-98]Platonov, A. V. / Lingk, C. / Feldmann, J. / Arzberger, M. / Amann, M.-C. / Abstreiter, G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 343
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Ultrafast switch-off of an electrically pumped InAs/GaAs quantum dot laserPlatonov, A. V. / Lingk, C. / Feldmann, Jochen / Arzberger, Marcus / Amann, Markus-Christian / Abstreiter, Gerhard et al. | 2003
- 347
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Observation of phonon bottleneck in quantum box cascade lasers [5023-99]Drachenko, O. / Becker, C. / Rylkov, V. V. / Page, H. / Smirnov, D. V. / Leotin, J. / Sirtori, C. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 347
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Observation of phonon bottleneck in quantum box cascade lasersDrachenko, O. / Becker, Cyril / Rylkov, V. V. / Page, Hideaki / Smirnov, D. V. / Leotin, Jean / Sirtori, Carlo et al. | 2003
- 350
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Gain and linewidth enhancement factor in InAs-quantum-dot and InAs-quantum-dash laser heterostructuresEliseev, Petr G. / Ukhanov, Alexander A. / Stintz, Andreas / Malloy, Kevin J. et al. | 2003
- 350
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Gain and linewidth enhancement factor in InAs-quantum-dot and InAs-quantum-dash laser heterostructures [5023-100]Eliseev, P. G. / Ukhanov, A. A. / Stintz, A. / Malloy, K. J. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 353
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High power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wellsKovsh, Alexey R. / Zhukov, Alexey E. / Maleev, Nikolay A. / Mikhrin, Sergei S. / Vasil'ev, A. V. / Shernyakov, Yuri M. / Livshits, Daniil A. / Maximov, Mikhail V. / Sizov, D. S. / Kryzhanovskaya, N. V. et al. | 2003
- 353
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High-power lasers based on submonolayer InAs-GaAs quantum dots and InGaAs quantum wells [5023-101]Kovsh, A. R. / Zhukov, A. E. / Maleev, N. A. / Mikhrin, S. S. / Vasil ev, A. V. / Shernyakov, Y. M. / Livshits, D. A. / Maximov, M. V. / Sizov, D. S. / Kryzhanovskaya, N. V. et al. | 2003
- 357
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MBE growth of low-threshold long-wavelength QD lasers on GaAs substratesMaleev, Nikolay A. / Kovsh, Alexey R. / Zhukov, Alexey E. / Mikhrin, Sergei S. / Vasil'ev, A. V. / Semenova, E. S. / Shernyakov, Yuri M. / Nikitina, E. V. / Kryjanovskaya, N. V. / Sizov, D. S. et al. | 2003
- 357
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MBE growth of low-threshold long-wavelength QD lasers on GaAs substrates [5023-102]Maleev, N. A. / Kovsh, A. R. / Zhukov, A. E. / Mikhrin, S. S. / Vasil ev, A. V. / Semenova, E. S. / Shernyakov, Y. M. / Nikitina, E. V. / Kryjanovskaya, N. V. / Sizov, D. S. et al. | 2003
- 361
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Near-threshold spectral and modal characteristics of a curved-grating quantum-well distributed-feedback laser (c-DFB)Boucher, Yann G. / Deryagin, Anton G. / Kuchinskii, V. I. / Sokolovskii, Grigorii S. et al. | 2003
- 361
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Near-threshold spectral and modal characteristics of a curved-grating quantum-well distributed-feedback laser (c-DFB) [5023-103]Boucher, Y. G. / Deryagin, A. G. / Kuchinskii, V. I. / Sokolovskii, G. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 365
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Non-linear power-current characteristics of quantum well lasers at high injectionEvtikhiev, Vadim P. / Kotelnikov, Eugeny Y. / Dorofeyev, D. V. / Zegrya, Georgy G. et al. | 2003
- 365
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Nonlinear power-current characteristics of quantum well lasers at high injection [5023-104]Evtikhiev, V. P. / Kotelnikov, E. Y. / Dorofeyev, D. V. / Zegrya, G. G. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 368
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Semiconductor quantum dot superlattice for coherent acoustic phonon emissionKhitun, Alexander G. / Wang, Kang L. et al. | 2003
- 368
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Semiconductor quantum dot superlattice for coherent acoustic phonon emission [5023-105]Khitun, A. G. / Wang, K. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 372
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14XX nm pump lases for Raman and Er3+doped fiber amplifiersFetisova, Natalia V. / Pikhtin, Nikita A. / Golikova, Ekaterina G. / Leshko, A. Y. / Lyutetskiy, Andrei V. / Slipchenko, S. O. / Sokolova, Z. N. / Tarasov, Ilya S. et al. | 2003
- 372
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14XX nm pump lasers for Raman and Er^3^+-doped fiber amplifiers [5023-106]Fetisova, N. V. / Pikhtin, N. A. / Golikova, E. G. / Leshko, A. Y. / Lyutetskiy, A. V. / Slipchenko, S. O. / Sokolova, Z. N. / Tarasov, I. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 376
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Optical gain and lasing of trions in delta-doped ZnSe quantum wellsPuls, Joachim / Mikhailov, G. V. / Henneberger, Fritz / Yakovlev, Dmitrii R. / Waag, Andreas et al. | 2003
- 376
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Optical gain and lasing of trions in delta-doped ZnSe quantum wells [5023-107]Puls, J. / Mikhailov, G. V. / Henneberger, F. / Yakovlev, D. R. / Waag, A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 379
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SC DHS InGaAsP/InP lasers (Lambda=1.5-1.6 mum) with above-threshold internal quantum efficiency etai^s^t about 100% [5023-108]Tarasov, I. S. / Zegrya, G. G. / Skrynnikov, G. V. / Pikhtin, N. A. / Slipchenko, S. O. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 379
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SC DHS InGaAsP/InP lasers (λ = 1.5-1.6 μm) with above-threshold internal quantum efficiency ηistabout 100%Tarasov, Ilya S. / Zegrya, Georgy G. / Skrynnikov, G. V. / Pikhtin, Nikita A. / Slipchenko, S. O. et al. | 2003
- 383
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Use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-μm picosecond laser diodesVenus, G. B. / Gubenko, A. / Portnoi, Efim L. / Avrutin, Eugene A. / Frahm, Jan-Michael / Kubler, J. / Schelhase, S. et al. | 2003
- 383
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Use of nanostructure-cluster-based ion-implantation-induced saturable absorbers in multisection high-power 1.5-mum picosecond laser diodes [5023-109]Venus, G. B. / Gubenko, A. / Portnoi, E. L. / Avrutin, E. A. / Frahm, J. / Kubler, J. / Schelhase, S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 387
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Self-focused distributed Bragg reflector QW laser diodes [5023-110]Yanson, D. A. / Rafailov, E. U. / Sokolovskii, G. S. / Kuchinskii, V. I. / Bryce, A. C. / Marsh, J. H. / Sibbett, W. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 387
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Self-focused distributed Bragg reflector QW laser diodesYanson, D. A. / Rafailov, Edward U. / Sokolovskii, Grigorii S. / Kuchinskii, V. I. / Bryce, A. C. / Marsh, John H. / Sibbett, Wilson et al. | 2003
- 391
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Er-doped SiO2with silicon nanocrystals as a new active optical mediumYassievich, Irina N. / Bresler, Mikhail S. / Gusev, Oleg B. / Moskalenko, A. S. et al. | 2003
- 391
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Er-doped SiO~2 with silicon nanocrystals as a new active optical medium [5023-111]Yassievich, I. N. / Bresler, M. S. / Gusev, O. B. / Moskalenko, A. S. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 395
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Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasers [5023-112]Zegrya, G. G. / Kostko, I. A. / Gunko, N. A. / Dogonkin, E. B. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 395
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Influence of intraband relaxation processes on threshold and power-current characteristics of quantum well lasersZegrya, Georgy G. / Kostko, Irina A. / Gunko, Natalya A. / Dogonkin, Eugen B. et al. | 2003
- 398
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Terahertz emitting devices based on intersubband transitions in SiGe quantum wells [5023-113]Adam, T. N. / Troeger, R. T. / Ray, S. K. / Lehmann, U. / Kolodzey, J. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 398
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Terahertz emitting devices based on intersubband transitions in SiGe quantum wellsAdam, T. N. / Troeger, R. T. / Ray, S. K. / Lehmann, U. / Kolodzey, James et al. | 2003
- 401
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Stimulated THz emission of acceptor-doped SiGe/Si quantum-well structures [5023-114]Kagan, M. S. / Altukhov, I. V. / Chirkova, E. G. / Korolev, K. A. / Sinis, V. P. / Troeger, R. T. / Ray, S. K. / Kolodzey, J. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 401
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Stimulated THz emission of acceptor-doped SiGe/SiKagan, Miron S. / Altukhov, Igor V. / Chirkova, Elena G. / Korolev, Konstantin A. / Sinis, Valery P. / Troeger, R. T. / Ray, S. K. / Kolodzey, James et al. | 2003
- 405
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Proposed terahertz Bloch superlattice oscillatorAndronov, Alexander A. / Nefedov, I. / Sosnin, A. et al. | 2003
- 405
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Proposed terahertz Bloch superlattice oscillator [5023-115]Andronov, A. A. / Nefedov, I. / Sosnin, A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 409
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Impurity-induced resonant states in modulation-doped heterostructures [5023-116]Odnoblyudov, M. A. / Blom, A. / Yassievich, I. N. / Chao, K.-A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 409
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Impurity induced resonant states in modulation doped heterostructuresOdnoblyudov, M. A. / Blom, A. / Yassievich, Irina N. / Chao, K. A. et al. | 2003
- 413
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Resonant acceptor states in delta-doped SiGe nanostructures [5023-117]Prokofiev, A. A. / Odnoblyudov, M. A. / Yassievich, I. N. / Chao, K.-A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 413
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Resonant acceptor states in delta-doped SiGe nanostructuresProkofiev, A. A. / Odnoblyudov, M. A. / Yassievich, Irina N. / Chao, K. A. et al. | 2003
- 417
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Gateable spin memory in InP quantum dots [5023-120]Yugova, I. A. / Ignatiev, I. V. / Verbin, S. Y. / Gerlovin, I. Y. / Kalevich, V. K. / Shiryaev, A. Y. / Kavokin, K. V. / Masumoto, Y. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 417
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Gateable spin memory in InP quantum dotsYugova, I. A. / Ignatiev, I. V. / Verbin, S. Y. / Gerlovin, I. Y. / Kalevich, V. K. / Shiryaev, A. Y. / Kavokin, Kirill V. / Masumoto, Yasuaki et al. | 2003
- 421
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Spin orientation of two-dimensional electron gas under intraband optical pumpingTarasenko, S. A. / Ivchenko, E. L. et al. | 2003
- 421
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Spin orientation of two-dimensional electron gas under intraband optical pumping [5023-121]Tarasenko, S. A. / Ivchenko, E. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 424
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Picosecond time scale spin-polarized electron kinetics in thin semiconductor layers [5023-122]Aulenbacher, K. / Schuler, J. / Harrach, D. V. / Reichert, E. / Rothgen, J. / Subashiev, A. V. / Tioukine, V. / Yashin, Y. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 424
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Picosecond time scale spin-polarized electron kinetics in thin semiconductor layersAulenbacher, K. / Schuler, J. / Harrach, D. V. / Reichert, E. / Roethgen, J. / Subashiev, Arsen V. / Tioukine, V. / Yashin, Yuri P. et al. | 2003
- 428
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Spin splitting and interband photogalvanic effect in quantum wells [5023-123]Golub, L. E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 428
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Spin splitting and interband photogalvanic effect in quantum wellsGolub, L. E. et al. | 2003
- 432
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Spin memory in the n-doped GaAs/AlGaAs quantum wellsVerbin, S. Y. / Efimov, Yu. P. / Petrov, V. M. / Ignatiev, I. V. / Dolgikh, Yu. K. / Eliseev, S. A. / Gerlovin, I. Y. / Ovsyankin, V. V. / Masumoto, Yasuaki et al. | 2003
- 432
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Spin memory in the n-doped GaAs/AlGaAs quantum wells [5023-124]Verbin, S. Y. / Efimov, Y. P. / Petrov, V. M. / Ignatiev, I. V. / Dolgikh, Y. K. / Eliseev, S. A. / Gerlovin, I. Y. / Ovsyankin, V. V. / Masumoto, Y. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 436
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Experimental progress in quantum-dot cellular automataSnider, G. L. / Orlov, A. O. / Kummamuru, R. K. / Bernstein, Gary H. / Lent, Craig S. / Lieberman, M. / Felhner, T. P. / Ramasubramaniam, R. et al. | 2003
- 436
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Experimental progress in quantum-dot cellular automata (Invited Paper) [5023-126]Snider, G. L. / Orlov, A. O. / Kummamuru, R. K. / Ramasubramaniam, R. / Bernstein, G. H. / Lent, C. S. / Lieberman, M. / Felhner, T. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 441
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Clocked quantum-dot celluar automata devicesOrlov, A. O. / Kummamuru, R. K. / Ramasubramaniam, R. / Lent, Craig S. / Bernstein, Gary H. / Snider, G. L. et al. | 2003
- 441
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Clocked quantum-dot cellular automata devices [5023-127]Orlov, A. O. / Kummamuru, R. K. / Ramasubramaniam, R. / Lent, C. S. / Bernstein, G. H. / Snider, G. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 445
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Semiconductor tunneling structure with self-assembled quantum dots for multi-logic cellular automata moduleKhitun, Alexander G. / Hong, S. / Wang, Kang L. et al. | 2003
- 445
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Semiconductor tunneling structure with self-assembled quantum dots for multilogic cellular automata module [5023-129]Khitun, A. G. / Hong, S. / Wang, K. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 449
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Feasibility study of the spin-wave quantum network [5023-130]Khitun, A. G. / Ostroumov, R. / Wang, K. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 449
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Feasibility study of the spin wave quantum networkKhitun, Alexander G. / Ostroumov, R. / Wang, Kang L. et al. | 2003
- 452
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Dimensional magnetoplasma resonance in GaAs/AlGaAs heterostructuresAshkinadze, B. A. / Cohen, Elisha / Ron, Arza et al. | 2003
- 452
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Dimensional magnetoplasma resonance in GaAs/AlGaAs heretostructures [5023-131]Ashkinadze, B. M. / Cohen, E. / Ron, A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 457
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Magnetoresistance in long InSb nanowiresZaitsev-Zotov, Sergei V. / Kumzerov, Yu. A. / Firsov, Yu. A. / Monceau, P. et al. | 2003
- 457
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Magnetoresistance in long InSb nanowires [5023-132]Zaitsev-Zotov, S. V. / Kumzerov, Y. A. / Firsov, Y. A. / Monceau, P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 461
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Hopping conductivity and magnetic-field-induced quantum hall-insulator transition in InAs/GaAs quantum dot layersKulbachinskii, Vladimir A. / Lunin, R. A. / Rogozin, V. A. / Golikov, A. V. / Kytin, V. G. / Zvonkov, B. N. / Nekorkin, S. M. / Filatov, D. O. / de Visser, A. et al. | 2003
- 461
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Hopping conductivity and magnetic-field-induced quantum Hall insulator transition in InAs/GaAs quantum dot layers [5023-133]Kulbachinskii, V. A. / Lunin, R. A. / Rogozin, V. A. / Golikov, A. V. / Kytin, V. G. / Zvonkov, B. N. / Nekorkin, S. M. / Filatov, D. O. / de Visser, A. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 465
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Quenching of the Hall effect in localized high-magnetic-field region [5023-134]Dubonos, S. V. / Novoselov, K. S. / Geim, A. K. / Maan, J. C. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 465
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Quenching of the hall effect in localised high magnertic field regionDubonos, S. V. / Novoselov, K. S. / Geim, A. K. / Maan, J. C. et al. | 2003
- 469
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Ferromagnetic GaMnAs for spintronic devicesKoeder, Achim / Schoch, W. / Frank, S. / Kling, R. / Oettinger, M. / Avrutin, V. / Limmer, W. / Sauer, Rolf / Waag, Andreas et al. | 2003
- 469
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Ferromagnetic GaMnAs for spintronic devices [5023-135]Koeder, A. / Schoch, W. / Frank, S. / Kling, R. / Oettinger, M. / Avrutin, V. / Limmer, W. / Sauer, R. / Waag, A. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 472
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Spin-polarized transport through doped nanotube junctions in presence of applied magnetic field [5023-136]Farajian, A. A. / Mizuseki, H. / Kawazoe, Y. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 472
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Spin-polarized transport through doped nanotube junctions in presence of applied magnetic fieldFarajian, Amir A. / Mizuseki, Hiroshi / Kawazoe, Yoshiyuki et al. | 2003
- 475
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Super high conductivity effect in metal-polymer-metal structuresIonov, Alexander N. / Zakrevskii, V. A. / Svetlichny, V. M. / Rentzsch, R. et al. | 2003
- 475
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Super-high-conductivity effect in metal-polymer-metal structures [5023-137]Ionov, A. N. / Zakrevskii, V. A. / Svetlichny, V. M. / Rentzsch, R. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 478
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Ballistic effects in magnetoresistance of the planar point contact composed of single crystalline tungsten [5023-138]Mikhailov, G. M. / Aparshina, L. I. / Chernykh, A. V. / Malikov, I. V. / Vinnichenko, V. Y. / Maan, J. C. / Olsthoorn, S. / Possanzini, C. / Jonge, H. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 478
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Ballistic effects in magnetoresistance of the planar point contact composed of single crystalline tungstenMikhailov, Gennady M. / Aparshina, L. I. / Chernykh, A. V. / Malikov, I. V. / Vinnichenko, V. Y. / Maan, J. C. / Olsthoorn, S. / Possanzini, C. / Jonge, H. et al. | 2003
- 482
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The conductivity of disordered 2D systems: from weak to strong localization [5023-139]Minkov, G. M. / Germanenko, A. V. / Rut, O. E. / Sherstobitov, A. A. / Zvonkov, B. N. / Uskova, E. A. / Birukov, A. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 482
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Conductivity of disordered 2D systems: from weak to strong localizationMinkov, Grigori M. / Germanenko, Alexander V. / Rut, O. E. / Sherstobitov, A. A. / Zvonkov, B. N. / Uskova, E. A. / Birukov, A. A. et al. | 2003
- 486
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Magnetotransport of 2D electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurity [5023-140]Moiseev, K. D. / Berezovets, V. A. / Mikhailova, M. P. / Nizhankovskii, V. I. / Parfeniev, R. V. / Yakovlev, Y. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 486
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Magnetotransport of 2D-electrons and holes at a type II broken-gap single heterojunction doped with acceptor impurityMoiseev, Konstantin D. / Berezovets, V. A. / Mikhailova, Maya P. / Nizhankovskii, V. I. / Parfeniev, R. V. / Yakovlev, Yury P. et al. | 2003
- 490
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Quantized acoustoelectric current in the ballistic channelsTrushin, M. P. / Margulis, V. A. / Shorokhov, A. V. et al. | 2003
- 490
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Quantized acoustoelectric current in the ballistic channels [5023-141]Trushin, M. P. / Margulis, V. A. / Shorokhov, A. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 494
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Conduction in nanocomposites: hopping on a fractalZvyagin, Igor P. et al. | 2003
- 494
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Conduction in nanocomposites: hopping on a fractal [5023-142]Zvyagin, I. P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 498
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Polarization revival of a Bloch-oscillating wave packet at resonant Zener tunneling in GaAs shallow superlattice [5023-144]Meinhold, D. / Lyssenko, V. G. / Leo, K. / Rosam, B. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 498
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Polarization revival of a Bloch-oscillating wave packet at resonant Zener tunneling in GaAs shallow superlatticeMeinhold, D. / Lyssenko, Vadim G. / Leo, Karl / Rosam, Ben et al. | 2003
- 501
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Tunnel gaps in the two-dimensional electron system in a magnetic fieldDubrovskii, Yu V. / Main, P. C. / Eaves, Laurence / Volkov, V. A. / Ivanov, D. Y. / Vdovin, E. E. / Khanin, Yu N. / Popov, V. G. / Maude, D. K. / Portal, Jean-Claude et al. | 2003
- 501
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Tunnel gaps in the two-dimensional electron system in a magnetic field [5023-145]Dubrovskii, Y. V. / Main, P. C. / Eaves, L. / Volkov, V. A. / Ivanov, D. Y. / Vdovin, E. E. / Khanin, Y. N. / Popov, V. G. / Maude, D. K. / Portal, J.-C. et al. | 2003
- 505
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Magneto-tunnelling spectroscopy of the electron states in the quantum well with embedded self assembled quantum dots: studies in magnetic field up to 28 TDubrovskii, Yu V. / Volkov, V. A. / Maude, D. K. / Portal, Jean-Claude / Chukalina, Marina V. / Ivanov, D. Y. / Vdovin, E. E. / Eaves, Laurence / Main, P. C. / Henini, Mohamed et al. | 2003
- 505
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Magnetotunnelling spectroscopy of the electron states in the quantum well with embedded self assembled quantum dots: studies in magnetic field up to 28 T [5023-146]Dubrovskii, Y. V. / Volkov, V. A. / Maude, D. K. / Portal, J.-C. / Chukalina, M. V. / Ivanov, D. Y. / Vdovin, E. E. / Eaves, L. / Main, P. C. / Henini, M. et al. | 2003
- 508
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Resonant broadening of two-dimensional state in semiconductors with inverted band structureGermanenko, Alexander V. / Minkov, Grigori M. / Larionova, V. A. / Rut, O. E. et al. | 2003
- 508
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Resonant broadening of two-dimensional states in semiconductors with inverted band structure [5023-147]Germanenko, A. V. / Minkov, G. M. / Larionova, V. A. / Rut, O. E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 512
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Resonant tunneling metal-oxide-silicon nanostructureKareva, Galina G. / Vexler, M. I. / Grekhov, I. / Shulekin, A. F. et al. | 2003
- 512
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Resonant tunneling metal-oxide-silicon nanostructure [5023-148]Kareva, G. G. / Vexler, M. I. / Grekhov, I. / Shulekin, A. F. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 516
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GaAs-based tunnel junctions [5023-149]Moller, C. / Bottcher, J. / Kunzel, H. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 516
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GaAs-based tunnel junctionsMoeller, C. / Boettcher, J. / Kuenzel, Harald et al. | 2003
- 519
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Tunneling of photogenerated holes through Landau levels in GaAs/AlGaAs double barrier diodes [5023-150]Vercik, A. / Brasil, M. J. S. P. / Gobato, Y. G. / Marques, G. E. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 519
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Tunnelling of photogenerated holes through landau levels in GaAs/AlGaAs double barrier diodesVercik, Andres / Brasil, M. J. / Gobato, Y. G. / Marques, G. E. et al. | 2003
- 522
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Entangled exciton states in quantum dot molecules (Invited Paper) [5023-151]Bayer, M. / Ortner, G. / Larionov, A. / Kress, A. / Forchel, A. W. B. / Hawrylak, P. / Hinzer, K. / Korkusinski, M. / Fafard, S. / Wasilewski, Z. R. et al. | 2003
- 522
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Entangled exciton states in quantum dot moleculesBayer, M. / Ortner, G. / Larionov, A. / Kress, A. / Forchel, Alfred W. B. / Hawrylak, Pawel / Hinzer, K. / Korkusinski, M. / Fafard, Simon / Wasilewski, Zbigniew R. et al. | 2003
- 526
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Magneto-optical properties of self-assembled (Cd,Mn)Se quantum dotsPuls, Joachim / Kratzert, P. / Hundt, A. / Rabe, Michael / Henneberger, Fritz et al. | 2003
- 526
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Magneto-optical properties of self-assembled (Cd,Mn)Se quantum dots [5023-152]Puls, J. / Kratzert, P. / Hundt, A. / Rabe, M. / Henneberger, F. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 529
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Singlet and triplet states of charged excitons in ZnSe-based QWs probed by high magnetic fieldsYakovlev, Dmitrii R. / Astakhov, G. V. / Ossau, W. / McCulloch, Q. / Crooker, Scott / Dzyubenko, A. B. et al. | 2003
- 529
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Singlet and triplet states of charged excitons in ZnSe-based QWs probed by high magnetic fields [5023-153]Yakovlev, D. R. / Astakhov, G. V. / Ossau, W. / McCulloch, Q. / Crooker, S. / Dzyubenko, A. B. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 533
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Combined exciton and trion excitations in modulation doped quantum well structuresKochereshko, Vladimir P. / Astakhov, G. V. / Yakovlev, Dmitrii R. / Ossau, W. / Landwehr, Gottfried / Wojtowicz, T. / Karczewski, Greg / Kossut, J. et al. | 2003
- 533
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Combined exciton and trion excitations in modulation doped quantum well structures [5023-154]Kochereshko, V. P. / Astakhov, G. V. / Yakovlev, D. R. / Ossau, W. / Landwehr, G. / Wojtowicz, T. / Karczewski, G. / Kossut, J. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 538
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Modeling of the photoluminescence spectra of localize excitons in Zn1-xCdxSe quantum wellsDiaz-Arencibia, Pedro / Hernandez-Calderon, Isaac et al. | 2003
- 538
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Modeling of the photoluminescence spectra of localize excitons in Zn~1~-~xCd~xSe quantum wells [5023-155]Diaz-Arencibia, P. / Hernandez-Calderon, I. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 542
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Paulo blockade in spin-flip Raman scattering via donor bound excitonsKoudinov, A. V. / Kusrayev, Yu. G. / Zakharchenya, B. P. / Wolverson, D. / Davies, J. J. / Kossut, J. et al. | 2003
- 542
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Pauli blockade in spin-flip Raman scattering via donor bound excitons [5023-156]Koudinov, A. V. / Kusrayev, Y. G. / Zakharchenya, B. P. / Wolverson, D. / Davies, J. J. / Kossut, J. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 546
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Exciton states of nano-islands in ZnCdSe quantum wells [5023-157]Reznitsky, A. / Klochikhin, A. A. / Permogorov, S. / Sedova, I. V. / Sorokin, S. / Ivanov, S. V. / Schmidt, M. S. / Kalt, H. / Klingshirn, C. F. / A.F. Ioffe Physico-Technical Institute (Russia) et al. | 2003
- 546
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Exciton states of nano-islands in ZnCdSe quantum wellsReznitsky, Alexander / Klochikhin, A. A. / Permogorov, S. / Sedova, Irina V. / Sorokin, S. / Ivanov, S. V. / Schmidt, Michael S. / Kalt, H. / Klingshirn, Claus F. et al. | 2003
- 550
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Inhomogeneous luminescence of slow polaritons from near-surface two-dimensional excitonic systemTeperik, T. V. / Popov, Vyacheslav V. et al. | 2003
- 550
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Inhomogeneous luminescence of slow polaritons from near-surface two-dimensional excitonic system [5023-158]Teperik, T. V. / Popov, V. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 553
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Nanostructures on flexible substratesShur, Michael S. / Rumyantsev, Sergey L. / Gaska, R. et al. | 2003
- 553
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Nanostructures on flexible substrates (Invited Paper) [5023-159]Shur, M. S. / Rumyantsev, S. L. / Gaska, R. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 558
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Carrier recombination in InGaN nanostructures: carrier localization in quantum-dots carrier separation by quantum-confined Stark effect [5023-19]Shapiro, N. / Feick, H. / Weber, E. R. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 559
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Quasi-guided modes and optical response in 2D photonic crystal slabs [5023-36]Tikhodeev, S. G. / Yablonskii, A. L. / Muljarov, E. A. / Gippius, N. A. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 561
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Nanoscale self-assembly and physics with semiconductors [5023-65]Petroff, P. M. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 562
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Electron-hole exchange interaction in nanostructures [5023-66]Ivchenko, E. L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 564
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Aharonov-Bohm effect for few-particle and collective excitations (excitons, trions, and plasmons) [5023-68]Chaplik, A. V. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 565
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Distribution of persistent currents and magnetic field in quantum wire and disc [5023-74]Entin, M. V. / Mahmoodian, M. M. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 567
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Circular photogalvanic effects induced by spin orientation in quantum wells [5023-118]Ganichev, S. D. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 569
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Spin polarization dynamics in n-doped InAs/GaAs quantum dots [5023-119]Krebs, O. / Cortez, S. / Jbeli, A. / Marie, X. / Gerard, J.-M. / Amand, T. / Voisin, P. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 571
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Spintronics and quantum information processing in nanostructures [5023-125]Burkard, G. / Loss, D. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 572
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Single-photon storage in a single quantum dot for the implementation of a solid state quantum repeater [5023-128]Bychkov, A. M. / Bouwmeester, D. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003
- 574
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Tunnel spectroscopy of self-assembled quantum dots: wavefunction mapping and addressing the dots with electrostatic gates [5023-143]Eaves, L. / A.F. Ioffe Physico-Technical Institute (Russia) / SPIE et al. | 2003