The Dynamics Of Reflection High Energy Electron Diffraction Intensity Behaviour As A Probe Of Crystal Growth: Computer Simulations And Measurements During Molecular Beam Epitaxial Growth Of GaAs/AlXGa1-XAs(100) (English)
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- New search for: Kim, J. Y.
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In:
Proc. SPIE
;
0524
; 78
;
1985
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:The Dynamics Of Reflection High Energy Electron Diffraction Intensity Behaviour As A Probe Of Crystal Growth: Computer Simulations And Measurements During Molecular Beam Epitaxial Growth Of GaAs/AlXGa1-XAs(100)
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Contributors:Madhukar, A. ( author ) / Ghaisas, S. V. ( author ) / Lee, T. C. ( author ) / Yen, M. Y. ( author ) / Chen, P. ( author ) / Kim, J. Y. ( author ) / Newman, P. G. ( author )
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Conference:Spectroscopic Characterization Techniques for Semiconductor Technology II ; 1985 ; Los Angeles,United States
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Published in:Proc. SPIE ; 0524 ; 78
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Publisher:
- New search for: SPIE
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Publication date:1985-06-28
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2
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An Overview Of Surface Analysis Techniques And Their Applications In The Semiconductor Industry (New Developments In Esca)Bakale, Donna K. / Linder, Robert / Bryson, Charles E. et al. | 1985
- 13
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Application Of X-Ray Diffraction Techniques To Semiconductor Materials CharacterizationLaderman, S. S. / Scott, M. / Smith, R. / Nel, A. et al. | 1985
- 18
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Studies Of The Si/SiO2 Interface Using Synchrotron RadiationHecht, Michael H. / Grunthaner, F. J. et al. | 1985
- 25
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Ion Beam Spectroscopy For III - V Semiconductor CharacterizationPronko, P. P. / Bhattacharya, R. S. et al. | 1985
- 34
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Deep - Level Transient Spectroscopy: From Characterization To Electronic Defect IdentificationJohnson, N. M. et al. | 1985
- 45
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Impurity Site Determination From High Resolution Localized Vibrational Mode Infrared Absorption MeasurementsTheis, William M. et al. | 1985
- 51
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Deep Level Derivative Spectroscopy Of Semiconductors By Wavelength Modulation TechniquesBraunstein, R. / Eetemadi, S. M. / Kim, R. K. et al. | 1985
- 61
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Infrared Absorption Spectroscopy For The Characterization Of Oxygen In SiliconO'Mara, W. C. et al. | 1985
- 68
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Deep Level Studies Of Undoped CdTeNayar, P. S. et al. | 1985
- 78
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The Dynamics Of Reflection High Energy Electron Diffraction Intensity Behaviour As A Probe Of Crystal Growth: Computer Simulations And Measurements During Molecular Beam Epitaxial Growth Of GaAs/AlXGa1-XAs(100)Madhukar, A. / Ghaisas, S. V. / Lee, T. C. / Yen, M. Y. / Chen, P. / Kim, J. Y. / Newman, P. G. et al. | 1985
- 86
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Photoreflectance Characterization Of GaAs/A1GaAs Thin Films, Heterojunctions And Multiple Quantum Well StructuresGlembocki, O. J. / Shanabrook, B. V. / Bottka, N. / Beard, W. T. / Comas, J. et al. | 1985
- 95
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Nonlinear And Time Resolved Studies Of Native Defects In CDSE.Rosen, D. L. / Li, Q. X. / Alfano, R. R. et al. | 1985
- 101
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Faraday Rotation And Ellipticity In Silicon Mosfets: Properties Of Tne 2D Electron GasPiller, Herbert et al. | 1985
- 106
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Picosecond To Microsecond Decay Of Photoinduced Absorption In Hydrogenated Amorphous SiliconRoberts, D. M. / Palmer, J. F. / Gustafson, T. L. et al. | 1985
- 112
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EELS And XPS Investigation On Amorphous Silicon Carbide Alloy FilmFang-qing, Zhang / Guang-hua, Chen / Xi-xiang, Xu et al. | 1985
- 118
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Raman Spectroscopy Study Of Polish-Induced Surface Strain In <100> And <111> GaAs and InPShen, H. / Hang, Z. / Pollak, Fred H. et al. | 1985
- 126
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Characterization Of Amorphous And Polycrystalline Si and Ge FilmsGonzalez-Hernandez, J. / Chao, S. S. / Martin, D. / Tsu, R. et al. | 1985
- 137
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Raman Scattering From Phonons And Magnons In Magnetic Semiconductor, MnTeMobasser, Sohrab R. / Hart, Timothy R. et al. | 1985
- 145
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Raman Scattering Determination Of Carrier Concentration And Surface Space Charge Layer IN <100> n-GaAsShen, H. / Pollak, Fred H. / Sacks, R. N. et al. | 1985
- 153
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Elastic Electron Tunneling Spectroscopy On Niobium/A-Silicon Oxide/Lead JunctionsCelaschi, S. / Green, A. K. et al. | 1985
- 160
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Electron Paramagnetic Resonance Characterization Of Defects In SemiconductorsWeber, Eicke R. et al. | 1985