Photocurrent decay transient process in a Si1-xGex/Si superlattice (English)
- New search for: Huang, X. L.
- New search for: Jeong, Mun S.
- New search for: Cha, O. H.
- New search for: Kim, J. Y.
- New search for: Suh, Eun-Kyung
- New search for: Lee, Hyung J.
- New search for: Huang, X. L.
- New search for: Jeong, Mun S.
- New search for: Cha, O. H.
- New search for: Kim, J. Y.
- New search for: Suh, Eun-Kyung
- New search for: Lee, Hyung J.
In:
Proc. SPIE
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3287
; 313
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1998
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:Photocurrent decay transient process in a Si1-xGex/Si superlattice
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Contributors:Huang, X. L. ( author ) / Jeong, Mun S. ( author ) / Cha, O. H. ( author ) / Kim, J. Y. ( author ) / Suh, Eun-Kyung ( author ) / Lee, Hyung J. ( author )
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Conference:Photodetectors: Materials and Devices III ; 1998 ; San Jose,CA,USA
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Published in:Proc. SPIE ; 3287 ; 313
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Publisher:
- New search for: SPIE
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Publication date:1998-04-08
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Narrow-gap semiconductor photodiodes (Invited Paper) [3287-01]Rogalski, A. / Razeghi, M. / SPIE et al. | 1998
- 2
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Narrow-gap semiconductor photodiodesRogalski, Antoni / Razeghi, Manijeh et al. | 1998
- 14
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InAs/Ga~1~-~xIn~xSb infrared superlattice photodiodes for infrared detection (Invited Paper) [3287-02]Fuchs, F. / Weimar, U. / Ahlswede, E. / Pletschen, W. / SPIE et al. | 1998
- 14
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InAs/Ga1-xInxSb infrared superlattice photodiodes for infrared detectionFuchs, Frank / Weimar, U. / Ahlswede, E. / Pletschen, Wilfried / Schmitz, J. / Walther, Martin et al. | 1998
- 22
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Mid-infrared photodetectors based on the InAs/InGaSb type-II superlatticesLin, C.H. T. / Brown, Gail J. / Mitchel, W. C. / Ahoujja, Mohamad / Szmulowicz, Frank et al. | 1998
- 22
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Mid-infrared photodetectors based on the InAs/InGaSb type-II superlattices [3287-03]Lin, C.-H. / Brown, G. J. / Mitchel, W. C. / Ahoujja, M. / SPIE et al. | 1998
- 30
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Growth and characterization of InAs/GaSb type-II superlattice for long-wavelength infrared detectorsMohseni, Hooman / Michel, Erick J. / Razeghi, Manijeh / Mitchel, W. C. / Brown, Gail J. et al. | 1998
- 30
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Growth and characterization of InAs/GaSb type-II superlattices for long-wavelength infrared detectors [3287-04]Mohseni, H. / Michel, E. J. / Razeghi, M. / Mitchel, W. C. / SPIE et al. | 1998
- 40
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Wide-area thin film metal-semiconductor-metal photodetectors for lidar applicationsMorrison, Charles B. / Glinz, Andreas P. / Zhu, Zheng / Bechtel, James H. / Frimel, Steven M. / Roenker, Kenneth P. et al. | 1998
- 40
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Wide-area thin film metal-semiconductor-metal photodetectors for lidar applications [3287-05]Morrison, C. B. / Glinz, A. P. / Zhu, Z. / Bechtel, J. H. / SPIE et al. | 1998
- 48
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Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs)An, Serguei / Clark, W. R. / Deen, M. Jamal / Vetter, Anthony S. / Svilans, M. et al. | 1998
- 48
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Ionization coefficient measurements in InP by using multiplication noise characteristics of InP/InGaAs separate absorption, grading, charge, and multiplication (SAGCM) avalanche photodiodes (APDs) [3287-07]An, S. / Clark, W. R. / Deen, M. J. / Vetter, A. S. / SPIE et al. | 1998
- 60
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Photoelectric performance degradation of several laser-irradiated Si detectorsMoeglin, Jean-Pierre / Gautier, Bernard / Joeckle, Rene C. / Bolmont, Dominique et al. | 1998
- 60
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Photoelectric performance degradation of several laser-irradiated Si detectors [3287-08]Moeglin, J.-P. / Gautier, B. / Joeckle, R. C. / Belmont, D. / SPIE et al. | 1998
- 67
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Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switching [3287-09]Garnov, S. V. / Klimentov, S. M. / Pimenov, S. M. / Konov, V. I. / SPIE et al. | 1998
- 67
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Ultrafast electronic processes in CVD diamonds and GaAs: picosecond photoconductivity and high-voltage switchingGarnov, Serge V. / Klimentov, Sergei M. / Pimenov, Sergej M. / Konov, Vitali I. / Kononenko, V. V. / Tsarkova, Olga G. / Gloor, S. / Luethy, Willy A. / Weber, Heinz P. et al. | 1998
- 80
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Strain-compensated InGaAs/AlGaAsP quantum well intersubband photodetectors for mid-IR wavelengthsBacher, Kenneth L. / Liu, Amy W. / Wu, Y. / Stewart, T. et al. | 1998
- 80
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Strain-compensated InGaAs/AlGaAsP quantum well intersubband photodetectors for mid-IR wavelengths [3287-10]Bacher, K. / Liu, W. K. / Wu, Y. / Stewart, T. / SPIE et al. | 1998
- 88
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Large bandgap shift in InGaAs(P)/InP multiquantum well structure obtained by impurity-free vacancy diffusion using SiO~2 capping and its application to photodetectors [3287-11]Si, S.-K. / Kim, S.-J. / Lee, J.-H. / Yeo, D. H. / SPIE et al. | 1998
- 88
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Large bandgap shift in InGaAs(P)/InP multi-quantum well structure obtained by impurity-free vacancy diffusion using SiO2capping and its application to photodetectorsSi, Sang-Kee / Kim, Sung-June / Lee, Ju-Han / Yeo, Deok Ho / Yoon, Kyung-Hun et al. | 1998
- 96
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Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectorsJelen, Christopher L. / Slivken, Steven / David, Thibaut / Brown, Gail J. / Razeghi, Manijeh et al. | 1998
- 96
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Responsivity and noise performance of InGaAs/InP quantum well infrared photodetectors [3287-12]Jelen, C. / Slivken, S. / David, T. / Brown, G. J. / SPIE et al. | 1998
- 105
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Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectors [3287-13]Lee, A. S. W. / Li, E. H. / Karunasiri, G. / SPIE et al. | 1998
- 105
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Impurity-free intermixing of InGaAs/GaAs-strained multiple quantum well infrared photodetectorsLee, Alex S. / Li, E. Herbert / Karunasiri, R. P. G. et al. | 1998
- 113
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The Bi/Bi1-xSbxmultiquantum well structureYi, Xinjian / Zhang, Xinyu / Li, Yi / Hao, Jianhua / Zhao, Xing-Rong et al. | 1998
- 113
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Bi/Bi~1~-~xSb~x multiquantum well structure [3287-14]Yi, X.-J. / Zhang, X.-Y. / Li, Y. / Hao, J.-H. / SPIE et al. | 1998
- 118
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Corrugated QWIP array fabrication and characterization [3287-15]Choi, K. K. / Goldberg, A. C. / Das, N. C. / Jhabvala, M. D. / SPIE et al. | 1998
- 118
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Corrugated QWIP array fabrication and characterizationChoi, Kwong-Kit / Goldberg, Arnold C. / Das, Naresh C. / Jhabvala, Murzy D. / Bailey, Robert B. / Vural, Kadri et al. | 1998
- 128
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Recent progress in quantum well infrared photodetector research and development at Jet Propulsion Lab.Krabach, Timothy N. / Gunapala, Sarath D. / Bandara, Sumith V. / Liu, John K. / Pool, Frederick S. / Sengupta, Deepak K. / Shott, C. A. / Carralejo, Ronald J. / Stetson, Norman B. et al. | 1998
- 128
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Recent progress in quantum well infrared photodetector research and development at Jet Propulsion Laboratory [3287-52]Krabach, T. N. / Gunapala, S. D. / Bandara, S. V. / Liu, J. K. / SPIE et al. | 1998
- 138
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Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengthsShellenbarger, Zane A. / Mauk, Michael G. / Cox, Jeffrey A. / South, Joseph / Lesko, Joseph D. / Sims, Paul E. / Jhabvala, Murzy D. / Fortin, Marilyn K. et al. | 1998
- 138
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Recent progress in GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths [3287-17]Shellenbarger, Z. A. / Mauk, M. G. / Cox, J. / South, J. / SPIE et al. | 1998
- 146
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Silicon JFETs for cryogenic applications [3287-18]Das, N. C. / Babu, S. / Jhabvala, M. D. / SPIE et al. | 1998
- 146
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Silicon JFETs for cryogenic applicationsDas, Naresh C. / Babu, Sachidananda / Jhabvala, Murzy D. et al. | 1998
- 152
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Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dots (Invited Paper) [3287-19]Narayanamurti, V. / SPIE et al. | 1998
- 152
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Ballistic electron emission microscopy (BEEM) of novel semiconductor heterostructures and quantum dotsNarayanamurti, Venkatesh et al. | 1998
- 167
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P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devicesLiu, Hui C. / Li, L. / Allard, Louis B. / Buchanan, Margaret / Wasilewski, Zbigniew R. / Brown, Gail J. / Szmulowicz, Frank / Hegde, S. M. et al. | 1998
- 167
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P-type quantum well infrared photodetectors and pixelless long-wavelength infrared imaging devices (Invited Paper) [3287-20]Liu, H. C. / Li, L. / Allard, L. B. / Buchanan, M. / SPIE et al. | 1998
- 173
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Noise and photoconductivity in single quantum well infrared photodetectors [3287-21]Ershov, M. / Korotkov, A. N. / SPIE et al. | 1998
- 173
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Noise and photoconductivity in single quantum well infrared photodetectorsErshov, Maxim / Korotkov, Alexander N. et al. | 1998
- 179
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Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum well [3287-22]Anwar, A. F. M. / Lefebvre, K. R. / SPIE et al. | 1998
- 179
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Comparison of the dark current from an AlGaAs/GaAs and AlGaN/GaN quantum wellAnwar, A. F. M. / Lefebvre, Kevin R. et al. | 1998
- 188
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GaN/AlGaN UV photodiodes and phototransistors [3287-24]Yang, W. / Nohava, T. / Krishnankutty, S. / Torreano, R. / SPIE et al. | 1998
- 188
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GaN/AlGaN UV photodiodes and phototransistorsYang, Wei / Nohava, Thomas / Krishnankutty, S. / Torreano, Robert / McPherson, Scott A. / Marsh, Holly A. et al. | 1998
- 198
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Megahertz bandwidth AlxGa1-xN/GaN-based p-i-n detectorsSmith, Gary A. / Estes, Michael J. / Dang, Tuoc / Salvador, Arnel A. / Fan, Zhifang / Xu, Guangyu / Botchkarev, Andrei / Morkoc, Hadis / Wolf, P. et al. | 1998
- 198
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Megahertz bandwidth Al~xGa~1~-~xN/GaN-based p-i-n detectors [3287-25]Smith, G. / Estes, M. J. / Dang, T. / Salvador, A. A. / SPIE et al. | 1998
- 206
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Comparison of GaN Schottky barrier and p-n junction photodiodes [3287-26]Malachowski, M. J. / Rogalski, A. / SPIE et al. | 1998
- 206
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Comparison of GaN Schottky barrier and p-n junction photodiodesMalachowski, Michal J. / Rogalski, Antoni et al. | 1998
- 214
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GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratio [3287-27]Kung, P. / Zhang, X. / Walker, D. / Saxler, A. / SPIE et al. | 1998
- 214
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GaN p-i-n photodiodes with high visible-to-ultraviolet rejection ratioKung, Patrick / Zhang, Xiaolong / Walker, Danielle / Saxler, Adam W. / Razeghi, Manijeh et al. | 1998
- 221
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Breakdown mechanisms in Al(GaN) MSM photodetectors [3287-51]Ferguson, I. T. / Schurman, M. J. / Karlicek, R. F. / Feng, Z. C. / SPIE et al. | 1998
- 221
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Breakdown mechanisms in Al(GaN) MSM photodetectorsFerguson, Ian T. / Schurman, Matthew J. / Karlicek, Robert F. / Feng, Zhe Chuan / Lianga, S. / Lu, Yicheng / Joseph, Charles L. et al. | 1998
- 228
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Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys) (Invited Paper) [3287-28]Sher, A. / Van Schilfgaarde, M. / Berding, M. A. / SPIE et al. | 1998
- 228
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Computational materials science: an increasingly reliable engineering tool (example: defects in HgCdTe alloys)Sher, Arden / van Schilfgaarde, M. / Berding, M. A. et al. | 1998
- 236
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Epitaxial structures for reduced cooling of high-performance infrared detectors (Invited Paper) [3287-29]Ashley, T. / Gordon, N. T. / SPIE et al. | 1998
- 236
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Epitaxial structures for reduced cooling of high-performance infrared detectorsAshley, Tim / Gordon, Neil T. et al. | 1998
- 244
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Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBE [3287-30]Kang, T. W. / Leem, J. H. / Hou, Y. B. / Jeon, H. C. / SPIE et al. | 1998
- 244
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Strain effects in CdTe(111) layers on tilted Si(100) substrate by MBEKang, Tae W. / Leem, J. H. / Hou, Y. B. / Jeon, H. C. / Hyun, J. K. / Lee, Ho-Young / Han, Myung-Soo / Hahn, Suk-Ryong et al. | 1998
- 256
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Novel InTlSb and InSbBi alloys for uncooled photodetector applications [3287-31]Lee, J. J. / Razeghi, M. / SPIE et al. | 1998
- 256
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Novel InTlSb and InSbBi alloys for uncooled photodetector applicationsLee, J. J. / Razeghi, Manijeh et al. | 1998
- 272
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Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIAWolf, Juergen / Driescher, Hans / Schubert, Josef / Rabanus, David / Paul, E. / Roesner, K. et al. | 1998
- 272
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Photoconductor arrays for a spectral-photometric far-infrared camera on SOFIA (Invited Paper) [3287-32]Wolf, J. / Driescher, H. / Schubert, J. / Rabanus, D. / SPIE et al. | 1998
- 280
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High-performance GaAs homojunction far-infrared detectors [3287-33]Perera, A. G. U. / Shen, W. Z. / Liu, H. C. / Buchanan, M. / SPIE et al. | 1998
- 280
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High-performance GaAs homojunction far-infrared detectorsPerera, A. G. Unil / Shen, W. Z. / Liu, Hui C. / Buchanan, Margaret / Schaff, William J. et al. | 1998
- 288
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Noise of high-Tc superconducting bolometersKhrebtov, Igor A. / Leonov, Vladimir N. / Tkachenko, A. D. / Bratukhin, Pavel V. / Ivanov, Andrey A. / Kuznetsov, Alexander V. / Neff, Helmut / Steinbeiss, Erwin et al. | 1998
- 288
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Noise of high-T~c superconducting bolometers [3287-35]Khrebtov, I. A. / Leonov, V. N. / Tkachenko, A. D. / Bratukhin, P. V. / SPIE et al. | 1998
- 300
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Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfaces [3287-36]Petrov, V. A. / SPIE et al. | 1998
- 300
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Possibility of the development of vicinal superlattices in quantum wires on semiconductor low-index surfacesPetrov, Victor A. et al. | 1998
- 305
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Selective formation of InxGa1-xAs quantum dots by molecular beam epitaxyPark, Yong Ju / Hahn, Cheol Koo / Kim, Kwang Mu / Jung, Suk Koo / Kim, Eun K. / Min, Suk-Ki et al. | 1998
- 305
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Selective formation of In~xGa~1~-~xAs quantum dots by molecular beam epitaxy [3287-37]Park, Y. J. / Hahn, C. K. / Kim, K. M. / Jung, S. K. / SPIE et al. | 1998
- 313
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Photocurrent decay transient process in a Si1-xGex/Si superlatticeHuang, X. L. / Jeong, Mun S. / Cha, O. H. / Kim, J. Y. / Suh, Eun-Kyung / Lee, Hyung J. et al. | 1998
- 313
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Photocurrent decay transient process in a Si~1~-~xGe~x/Si superlattice [3287-38]Huang, X. L. / Jeong, M. S. / Cha, O. H. / Kim, J. Y. / SPIE et al. | 1998
- 321
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Electrical transport properties of highly doped N-type GaN epilayers [3287-39]Lee, H. J. / Cheong, M. G. / Suh, E.-K. / Razeghi, M. / SPIE et al. | 1998
- 321
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Electrical transport properties of highly doped N-type GaN epilayersLee, Hyung J. / Cheong, M. G. / Suh, Eun-Kyung / Razeghi, Manijeh et al. | 1998
- 327
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RF magnetron sputtering deposition of CdTe passivation on HgCdTeRutkowski, Jaroslaw / Adamiec, Krzysztof / Rogalski, Antoni et al. | 1998
- 327
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RF magnetron sputtering deposition of CdTe passivation on HgCdTe [3287-40]Rutkowski, J. / Adamiec, K. / Rogalski, A. / SPIE et al. | 1998
- 336
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Extended dynamical range solid state photon counterProchazka, Ivan / Hamal, Karel / Blazej, Josef / Kirchner, Georg / Koidl, Franz et al. | 1998
- 336
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Extended dynamical range solid state photon counter [3287-41]Prochazka, I. / Hamal, K. / Blazej, J. / Kirchner, G. / SPIE et al. | 1998
- 341
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RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition [3287-47]Hirano, Y. / Sato, F. / Jayatissa, A. H. / Ohtake, H. / SPIE et al. | 1998
- 341
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RF bias effects on properties of hydrogenated amorphous silicon deposited by electron cyclotron resonance plasma-enchanced chemical vapor depositionHirano, Yoshiyuki / Sato, Fumio / Jayatissa, Ahalapitiya H. / Ohtake, Hiroshi / Takizawa, Kuniharu et al. | 1998
- 349
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Photoresist microparabolas for beam steeringRotich, Samuel K. / Smith, Jim G. / Evans, Alan G. R. / Brunnschweiler, Arthur et al. | 1998
- 349
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Photoresist microparabolas for beam steering [3287-50]Rotich, S. K. / Smith, J. G. / Evans, A. G. R. / Brunnschweiler, A. / SPIE et al. | 1998