Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics (English)
- New search for: Pati, S. P.
- New search for: Tripathy, P. R.
- New search for: Choudhury, S. K.
- New search for: Mukharjee, M.
- New search for: Purohit, P.
- New search for: Pati, S. P.
- New search for: Tripathy, P. R.
- New search for: Choudhury, S. K.
- New search for: Mukharjee, M.
- New search for: Purohit, P.
In:
Proc. SPIE
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8549
; 85490P
;
2012
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics
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Contributors:Pati, S. P. ( author ) / Tripathy, P. R. ( author ) / Choudhury, S. K. ( author ) / Mukharjee, M. ( author ) / Purohit, P. ( author )
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Conference:16th International Workshop on Physics of Semiconductor Devices ; 2011 ; Kanpur, India
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Published in:Proc. SPIE ; 8549 ; 85490P
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Publisher:
- New search for: SPIE
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Publication date:2012-10-15
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 85490A
-
Controlling of short channel effects in pocket implanted Ge channel pMOSFETs with high-k gate stacksMondal, Chandrima / Biswas, Abhijit et al. | 2012
- 85490B
-
Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATTPattanaik, S. R. / Pradhan, J. / Swain, S. K. / Panda, P. / Dash, G. N. et al. | 2012
- 85490C
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NEGF analysis of double gate SiGe and GaAs tunnel FETsMishra, Rahul / Ghosh, Bahniman et al. | 2012
- 85490D
-
Device improvement and circuit performance evaluation of complete SiGe double gate tunnel FETsGhosh, Bahniman / Mishra, Rahul et al. | 2012
- 85490E
-
Simulation studies on heterojunction and HIT solar cellsPatel, Kamlesh / Panwar, O. S. / Bisht, Atul / C., Sreekumar / Kumar, Sushil / Rauthan, C. M. S. et al. | 2012
- 85490F
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A comparative study of dynamic characteristics of asymmetrical ATT diodes based on various semiconductor materials with increasing band-gap energyMukherjee, Moumita / Garai, Milon / Chakraborty, Diptadip et al. | 2012
- 85490G
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Heterojunction versus homojunction transit time devices at elevated junction temperature: performance comparison at MMwave window frequencyMukherjee, Moumita / Chakraborty, Diptadip / Das, Arijit et al. | 2012
- 85490H
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Optimized shielded-gate trench MOSFET technology for high-frequency, high-efficiency power suppliesChalla, Ashok / Sarkar, Tirthajyoti / Sapp, Steven et al. | 2012
- 85490I
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A comparative study of high frequency characteristics of SiC-based SDRsParida, R. K. / Panda, A. K. / Dash, G. N. et al. | 2012
- 85490J
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A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs (HF 12)Praveen, K. C. / Pushpa, N. / Tripathi, Ambuj / Revannasiddaiah, D. / Naik, P. S. / Cressler, John D. / Gnana Prakash, A. P. et al. | 2012
- 85490K
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The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13)Pushpa, N. / Praveen, K. C. / Gnana Prakash, A. P. / Naik, P. S. / Gupta, S. K. / Revannasiddaiah, D. et al. | 2012
- 85490L
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Cl2/Ar based inductively coupled plasma etching of GaN/AlGaN structureRawal, D. S. / Arora, Henika / Agarwal, V. R. / Kapoor, Ashok / Vinayak, Seema / Sehgal, B. K. / Muralidharan, R. / Saha, Dipankar / Malik, H. K. et al. | 2012
- 85490M
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60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistorKrishnakumar, K. S. / Dinesh, C. M. / Ramani, . / Khan, S. A. / Kanjilal, D. et al. | 2012
- 85490N
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Analysis of Angelov model for 0.25μm pHEMTsMongia, Deepti / Mishra, Meena / Kumar, Ashok / Balakrishnan, V. R. / Sharma, Harishankar / Sehgal, B. K. et al. | 2012
- 85490O
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Design, fabrication and measurement of sub 1 dB noise figure LNATomar, Sanjay K. / Mishra, Meena / Kumar, Ashok / Sharma, HariShankar / Sehgal, B. K. et al. | 2012
- 85490P
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Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristicsPati, S. P. / Tripathy, P. R. / Choudhury, S. K. / Mukharjee, M. / Purohit, P. et al. | 2012
- 85490Q
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Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN templateBag, Rajesh K. / Tyagi, R. / Mohan, P. / Narang, K. / Verma, Sudeep / Muralidharan, R. et al. | 2012
- 85490R
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0.4μm high voltage CMOS smart power technology: 120V LD NMOS for integrated system on chip applicationsPatel, Nayan et al. | 2012
- 85490S
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Theoretical study of drain current of AlInN/GaN HEMTs on SiC substrateHossain, Md. Iqbal / Islam, Khandakar N. / Howlader, Chandan Qumar / Mahmood, Zahid Hasan et al. | 2012
- 85490T
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New generation MOSFET design for battery powered portable applicationsDeb Roy, Sukhendu / Sodhi, Ritu / Sapp, Steven et al. | 2012
- 85490U
-
An improved SOI MESFET with triple-recessed drift region for electrical performance improvementOrouji, Ali A. / Ghasemian, Masoomeh / Aminbeidokhti, Amirhossein / Rahmaninezhad, Soude et al. | 2012
- 85490V
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Large-signal modeling of hexagonal (4H-) SiC based double drift transit time device as high-power MM-wave source at W-band window frequencyMukherjee, Moumita / Chakraborty, Diptadip et al. | 2012
- 85490W
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RF power amplifier: pushing the boundaries of performance versus costDe Souza, M. M. / Chevaux, N. / Rasheduzzaman, M. et al. | 2012
- 85490X
-
Electrical characterization of γ-Al2O3 thin film parallel plate capacitive sensor for trace moisture detectionKumar, Lokesh / Kumar, Shailesh / Khan, S. A. / Islam, Tariqul et al. | 2012
- 85490Y
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Structural and gas sensing properties of sprayed antimony doped tin oxide thin filmsJoshi, P. S. / Sutrave, D. S. / Jogade, S. M. / Jamadar, B. N. et al. | 2012
- 85490Z
-
Metal organic chemical vapor deposition and investigation of structural, optical and gas sensing characteristics of ZnO thin film grown on quartzPati, S. / Banerji, P. / Majumder, S. B. et al. | 2012
- 85491A
-
Low cost, disposable colorimetric sensor for quantitative detection of ammonia gasSrivastava, Ruchi / Verma, Abhishek / Jain, V. K. et al. | 2012
- 85491B
-
MEMS deformable mirrors: technology and applicationsGupta, Amita / Singh, R. / Chaudhary, Monika / Kumar, Shailesh / Meena, A. K. et al. | 2012
- 85491C
-
Design and simulation of Pt-based microhotplate, and fabrication of suspended dielectric membrane by bulk micromachiningPrasad, Mahanth / Yadav, R. P. / Sahula, V. / Khanna, V. K. et al. | 2012
- 85491D
-
Design and mathematical model of a ZnO-based MEMS acoustic sensorPrasad, Mahanth / Yadav, R. P. / Sahula, V. / Khanna, V. K. et al. | 2012
- 85491E
-
Optical and I-V studies on Au-ZnO-ITO based UV-sensing devicesReddy, Pramod R. / Kashyap, Sandeep / Mishra, Sunita / Paul, Ashok / Kapur, Pawan et al. | 2012
- 85491F
-
Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applicationsLenka, Manas K. / Sharma, Amit / Sharma, Jaibir / DasGupta, Amitava et al. | 2012
- 85491G
-
Design of piezoresistive MEMS absolute pressure sensorKumar, S. / Pant, B. D. et al. | 2012
- 85491H
-
FEM simulation of CMUT cell for NDT applicationAditi, . / Mukhiya, Ravindra / Gopal, Ram / Khanna, V. K. et al. | 2012
- 85491I
-
Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensorKumari, Vinita / Mishra, Prabhash / Islam, S. S. et al. | 2012
- 85491J
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On the calculation of energy eigenstates of electrons in a spherical quantum dotPurohit, Pranati / Roy, Dilip K. / Pati, Shankar P. et al. | 2012
- 85491K
-
Design and Fabrication of Carbon Nano-structured Flexible AntennaLamba, V. K. / Kumar, A. / Verma, M. / Dhariwal, S. / Sharma, K. / Anand, S. / Engles, D. et al. | 2012
- 85491L
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Characterization of traps in SiGe:C channel heterojunction PMOSFETsMukherjee, C. / Maiti, C. K. et al. | 2012
- 85491M
-
Hydrogenated amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc techniquePanwar, O. S. / Ishpal, . / tripathi, R. K. / Srivastava, A. K. / Kumar, Sushil et al. | 2012
- 85491N
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An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile chargesSivasankaran, K. / Pilli, Kishore / Mallick, P. S. et al. | 2012
- 85491O
-
Fabrication of graphene based field effect transistor with copper electrodesSrivastava, Pawan K. / Ghosh, Subhasis et al. | 2012
- 85491P
-
Ozone/UV-light oxidation of multiwall carbon nanotubes (MWCNTs)Hussain, Shahir / Islam, S. S. / Harsh, . et al. | 2012
- 85491Q
-
Study of energy eigenvalues and density of states of carriers in a triangular quantum wireDeyasi, Arpan / Bhattacharyya, S. / Das, N. R. et al. | 2012
- 85491R
-
Positioning of CNTs over the gold substrate via self-assembled monolayer functionalization using dip-pen nanowritingAgarwal, Pankaj B. / Sahu, Smriti / Kapse, Pooja / Gupta, Sanjeev K. et al. | 2012
- 85491S
-
AC conductivity and dielectric studies on nickel ferrite nano-particles synthesized by sol gel techniqueOmprakash, S. / Gnana Prakash, A. P. / Naik, P. S. et al. | 2012
- 85491T
-
Diffusion thermopower in graphene nanoribbons: effect of subbandsNissimagoudar, A. S. / Sankeshwar, N. S. et al. | 2012
- 85491U
-
Diffusion thermopower in suspended grapheneVaidya, R. G. / Sankeshwar, N. S. / Mulimani, B. G. et al. | 2012
- 85491V
-
Effects of size nonuniformity on the optical transitions in a set of realistic InxGa1-xN/GaN quantum dots, having a Gaussian distributionKabi, Sanjib / Panda, Siddhartha / Biswas, Dipankar et al. | 2012
- 85491W
-
Physical and optical properties of CuBO2nanopowders synthesized via sol-gel routeSantra, S. / Das, N. S. / Chattopadhyay, K. K. et al. | 2012
- 85491X
-
Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristicsNag Chowdhury, Basudev / Singh, Puja / Chattopadhyay, Sanatan et al. | 2012
- 85491Y
-
Surface charging of silicon dioxide and aluminum dioxide structuresRathi, Abhishek / Martin, Bjoern et al. | 2012
- 85491Z
-
Room temperature ferromagnetism in Cu doped ZnO for spintronicsKhan, Zaheer A. / Ghosh, Subhasis et al. | 2012
- 85492A
-
The role of separate confinement heterostructure layer in designing semiconductor nanostructured optoelectronic devicesShmavonyan, Gagik / Asatryan, H. G. et al. | 2012
- 85492B
-
The impact of a high-κ gate dielectric on a p-channel tunnel field- effect transistorChattopadhyay, Avik / Mallik, Abhijit et al. | 2012
- 85492C
-
An InGaSb TFET with high ION/IOFF ratio and low circuit leakage powerMamilla, Bhargav K. / Nair, Sooraj / Ghosh, Bahniman et al. | 2012
- 85492D
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Quantum confinement effect on photoluminescence of nanocrystalline ZnO thin filmsArora, Manju / Singh, Santosh / Singh, Sukhvir et al. | 2012
- 85492E
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Silicon nanowire arrays using g-line photolithographyPrajesh, Rahul / Tholia, Hemant / Agarwal, Ajay et al. | 2012
- 85492F
-
Formation and optical properties of amorphous carbon film having embedded nanoparticles deposited by anodic jet carbon arc techniqueTripathi, R. K. / Panwar, O. S. / Kesarwani, Ajay / Kumar, Sushil / Basu, A. et al. | 2012
- 85492G
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Wurtzite InN nanodots on Si(100) by molecular beam epitaxyBhat, Thirumaleshwara N. / Rajpalke, Mohana K. / Kumar, Mahesh / Roul, Basanta / Krupanidhi, S. B. et al. | 2012
- 85492H
-
Fabrication and characterization of high mobility spin-coated zinc oxide thin film transistorsSingh, Shaivalini / Chakrabarti, P. et al. | 2012
- 85492I
-
Nanostructured TiO2thin films for field emission and sensor applicationsRaut, N. C. et al. | 2012
- 85492J
-
Fabrication of nano-gap electrodes using a focused ion beam for measuring electrical properties of molecular scale transistorsPurohit, Gangadhar / Shankar, Manish / Gupta, Deepak / Damodaran, S / Katiyar, Monica et al. | 2012
- 85492K
-
The simple theoretical analysis of the mass and molar magnetic susceptibilities in quantum wires of II-VI and IV-VI compound semiconductorSingha Roy, Subhamoy et al. | 2012
- 85492L
-
Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETsTripathi, Shweta / Jit, S. et al. | 2012
- 85492M
-
Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LEDSreenidhi, Turuvekere / Chatterjee, Jyotirmoy / DasGupta, Amitava / DasGupta, Nandita et al. | 2012
- 85492N
-
Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetectorRakshit, Paulami / Das, N. R. et al. | 2012
- 85492O
-
Effect of pulse parameter and dark count probability on the performance of a gated mode SPADDas, N. R. / Das, Tania / Guin, Shampa et al. | 2012
- 85492P
-
Bloch wave analysis for optical band structure of III-nitrides photonic crystalsGhosh, K. K. / Ghosh, R. / Ghosal, D. et al. | 2012
- 85492Q
-
Studies on the dislocation densities of gallium nitride grown by MOCVDLoganathan, Ravi / Jayasakthi, Mathaiyan / Arivazhagan, Ponnusamy / Prabakaran, Kandhasamy / Balaji, Manavaimaran / Baskar, Krishnan et al. | 2012
- 85492R
-
Growth and Characterization of AlxGa1-xN on GaN/Al2O3Jayasakthi, Mathaiyan / Ramesh, Raju / Arivazhagan, Ponnusamy / Loganathan, Ravi / Prabakaran, Kandhasamy / Balaji, Manavaimaran / Baskar, Krishnan et al. | 2012
- 85492S
-
Photon decay time studies on Al0.45Ga1-0.55N/Al0.18Ga1-0.82N/Al0.45Ga1-0.55N double heterostructures grown on sapphire substrate by MOCVDArivazhagan, Ponnusamy / Ramesh, Raju / Jayasakthi, Mathaiyan / Loganathan, Ravi / Balaji, Manavaimaran / Baskar, Krishnan et al. | 2012
- 85492T
-
40GHz integrated multi quantum well intermixed waveguide photodiodesBhowmick, Tathagata / Das, Utpal et al. | 2012
- 85492U
-
Tuning the photoluminescence of ZnO thin films by indium dopingChirakkara, Saraswathi / Krupanidhi, S .B. et al. | 2012
- 85492V
-
Charge transport study of polymer light emitting diodes by impedance spectroscopyBajpai, Manisha / Srivastava, Ritu / Kamalasanan, M. N. / Tiwari, R. S. / Chand, Suresh et al. | 2012
- 85492W
-
Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxyRajpalke, Mohana K. / Bhat, Thirumaleshwara N. / Kumar, Mahesh / Roul, Basanta / Krupanidhi, S. B. et al. | 2012
- 85492X
-
SiC light emitting quantized structures on silicon by spin-on techniqueJain, Deepak / Sandeep, Chatti R. / Das, Utpal et al. | 2012
- 85492Y
-
Effect of Si, Sc, Cr doping on the structural, optical and discharge characteristics of MgO thin films as protective layer for plasma display panelsSingh, Chandra Bhal / Barik, U. K. / Sarkar, Surajit / Singh, Vandana / Ram, Sanjay K. / Dwivedi, Harish K. / Kumar, Satyendra et al. | 2012
- 85492Z
-
Modeling of charge transport through thiophene nanowireLamba, V. K. / Engles, S. / Yadav, P. / Dhanda, S. et al. | 2012
- 85493A
-
Band gap engineering of hydrogenated amorphous carbon thin films for solar cell applicationDwivedi, Neeraj / Kumar, Sushil / Dayal, Saurabh / Rauthan, C. M. S. / Panwar, O. S. / Malik, Hitendra K. et al. | 2012
- 85493B
-
Grain growth study of electrochemically deposited CuInSe2 by rapid thermal annealing in sulfur atmosphereBhatia, Ashish / Karmarkar, M. A. / Meadows, H. / Dale, P. J. / Scarpulla, M. A. et al. | 2012
- 85493C
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Growth of nanocrystalline silicon films by VHF PECVDGope, Jhuma / Kumar, Sushil / Singh, Sukhbir / Rauthan, C. M. S / Srivastava, P. C. et al. | 2012
- 85493D
-
Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVDJha, Himanshu S. / Singh, M. / Yadav, Asha / Lalhriatzuala, . / Deva, Dinesh / Agarwal, Pratima et al. | 2012
- 85493E
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Hybrid organic (P3HT and MEH-PPV)-inorganic (CuInGaSe2) nanocomposites: charge transfer and photostability studiesKharkwal, Aneeta / Sharma, Shailesh N. / Chand, Suresh / Singh, A. K. et al. | 2012
- 85493F
-
Understanding degradation mechanism of bulk heterojunction organic photovoltaic devicesRastogi, Shivam / Dharmalingam, Kurunthu / Katiyar, Monica / Garg, Ashish et al. | 2012
- 85493H
-
Laser-doped selective emitters for photovoltaic applicationsWoolridge, J. / Reutzel, E. / Ashok, S. / Zou, L. et al. | 2012
- 85493I
-
Optical and electrical characterization of atomic layer deposited (ALD) HfO2/p-GaAs MOS capacitorsDas, Anindita / Chattopadhyay, Sanatan / Dalapati, Goutam K. / Chi, Dongzhi / Kumar, M. K. et al. | 2012
- 85493J
-
Characterization of silicide-silicon interface contact resistivity using 1-D dual transmission line model approximation of modified cross bridge kelvin measurementsArya, Ankr / Jayaraman, Balaji / Bajaj, Mohit / Dixit, Abhisek / Tran, Cung et al. | 2012
- 85493K
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Deposition of porous low-k thin films using Tween 80 porogen for ILD application in ULSI circuitsMhaisagar, Yogesh S. / Kawishwar, Renuka / Joshi, Bhavana N. / Mahajan, A. M. et al. | 2012
- 85493L
-
Measurement and analysis of source/drain contact resistance in FinFETsDixit, Abhisek / Collaert, Nadine / Jurczak, Malgorzata et al. | 2012
- 854901
-
Front Matter: Volume 8549| 2012
- 854902
-
Modeling the gain and bandwidth of submicron active layer n+-i-p+avalanche photodiodeMajumder, Kanishka / Das, N. R. et al. | 2012
- 854903
-
A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMTBhattacharya, Monika / Jogi, Jyotika / Gupta, R. S. / Gupta, Mridula et al. | 2012
- 854904
-
Semi-analytical estimation of intra-die variations of analog performances of nano-scale nMOS transistorSengupta, Sarmista / Pandit, Soumya et al. | 2012
- 854905
-
Digital circuit analysis of insulated shallow extension silicon on void (ISESOV) FET for low voltage applicationsKumari, Vandana / Saxena, Manoj / Gupta, R. S. / Gupta, Mridula et al. | 2012
- 854906
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An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET)Narang, Rakhi / Saxena, Manoj / Gupta, R. S. / Gupta, Mridula et al. | 2012
- 854907
-
The impact of process-induced mechanical stress on multi-fingered device performanceAlam, Naushad / Dasgupta, S. / Anand, Bulusu et al. | 2012
- 854908
-
Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOIMisra, Prasanna K. / Qureshi, S. et al. | 2012
- 854909
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Device oriented statistical modeling method for process variability in 45nm analog CMOS technologyK. R., Ajayan / Bhat, Navakanta et al. | 2012
- 854910
-
Stability study on ceramic mercuric iodide (red) x-ray sensorSingh, Kulvinder / Saxena, Manoj et al. | 2012
- 854911
-
Design of vertical packaging technology for RF MEMS switchBansal, Deepak / Sharma, Akshdeep / Kaur, Maninder / Rangra, K. J. et al. | 2012
- 854912
-
Proton beam writing for minimum step lithography in multilayer patterningSarkar, Mihir / Shukla, Neeraj / Banerji, Nobin / Mohapatra, Yashowanta N. et al. | 2012
- 854913
-
Optical interrogation of a pressure sensor fabricated using MEMS technologyDhingra, Bhawna / Thyagarajan, K. / Chandra, Sudhir / Tiwari, Ruchi et al. | 2012
- 854914
-
Modeling and simulation of capacitive sensor for E.Coli bacteria in waterDwivedi, Atul K. / Deshmukh, R. B. / Patrikar, R. M. et al. | 2012
- 854915
-
Low temperature tin oxide (SnO2) nanowire gas sensorJohari, Anima / Bhatnagar, M. C. / Rana, V. et al. | 2012
- 854916
-
A resistive type humidity sensor based on ZnO-SnO2nanocompositeTiwari, Karunesh / Pandey, N. K. / Kumar, Alok et al. | 2012
- 854917
-
Design aspects of electrostatically driven MEMS adaptive mirrorKumar, Shailesh / Gupta, Amita et al. | 2012
- 854918
-
Tunable MEMS diffraction gratingsGowri Suresh, V. / DasGupta, Nandita / Bhattacharya, Shanti et al. | 2012
- 854919
-
Integration of MEMS with nanostructured metal-oxide materials for improved sensors for volatile organic compoundsChandra, Sudhir / Pandya, Hardik / Vyas, Anoop et al. | 2012
- 854920
-
Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientationsDutta Gupta, S. / Biswas, Abhijit / Mitard, J. / Eneman, G. / De Jaeger, B. / Meuris, M. / Heyns, M. M. et al. | 2012
- 854921
-
Visible blind photodetector based on room temperature grown ZNO nanospikes arrayMaiti, Soumen / Maiti, Uday N. / Chattopadhyay, Kalyan K. et al. | 2012
- 854922
-
Electrical and reliability characteristics of oxide grown by high pressure oxidation of SiC in nitric acid vapor with different gas ambientsKalai Selvi, K. / Sreenidhi, T. / DasGupta, Nandita et al. | 2012
- 854923
-
Complex bandstructure of direct bandgap III-V semiconductors: application to tunnelingAjoy, Arvind et al. | 2012
- 854924
-
Noise characterization of ALD HfO2MOS capacitors with different metal (Au, Pd and Pt) gatesMallik, S. / Mukherjee, C. / Mahata, C. / Dalapati, G. K. / Chi, D. Z. / Maiti, C. K. et al. | 2012
- 854925
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Effects of constant voltage stressing on HfTaOx/SiGe gate stackMallik, S. / Mahata, C. / Hota, M. K. / Sarkar, C. K. / Maiti, C. K. et al. | 2012
- 854926
-
Fabrication of two dimensional carbon nanostructures using hot wire chemical vapor deposition techniqueSingh, Mukesh / Jha, Himanshu S. / Yadav, Asha / Lalhriatzuala, . / Deva, Dinesh / Agarwal, Pratima et al. | 2012
- 854927
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Facile synthesis of large scale mesoporous TiO2microspheres by template-free hydrothermal process: their photocatalysis degradationSarkar, Debabrata / Chattopadhyay, Kalyan K. et al. | 2012
- 854928
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Enhanced optical absorption in silicon nanowireHasan, Mehedhi / Huq, Md. Fazlul / Mahmood, Zahid H. / Hussain, Sabina et al. | 2012
- 854929
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Characterization of dislocation-based nanotransistorsReiche, Manfred / Kittler, Martin et al. | 2012
- 854930
-
Multi emissive layer type white organic light emitting diode based on zinc metal complexesKumar, Amit / Srivastava, Ritu / Kumar, Arunandan / Kamalasanan, Modeeparampil N. / Singh, Ishwar et al. | 2012
- 854930
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Multi emissive layer type white organic light emitting diode based on zinc metal complexes [8549-17]Kumar, A. / Srivastava, R. / Kamalasanan, M.N. / Singh, I. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
- 854931
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Fabrication of organic complementary inverterYadav, Sarita / Ghosh, Subhasis et al. | 2012
- 854932
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Origin and characterization of traps in organic semiconductor thin filmsSharma, Akanksha / Yadav, Sarita / Ghosh, Subhasis et al. | 2012
- 854933
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Enhancement in charge transfer by non-ligand exchange process for colloidal hybrid organic(MEH-PPV):inorganic(CdSe) nanocompositesMehta, Aarti / Sharma, Shailesh N. / Singh, V. N. / Srivastva, A. K. / Chand, S. et al. | 2012
- 854934
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Silver-polypyrrole-silver structure fabrication and characterization over wide temperatureTaunk, Manish / Chand, Subhash et al. | 2012
- 854935
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Effect of temperature conditions on the emission of ion-induced secondary electrons from MgO filmsSingh, Chandra Bhal / Sarkar, Surajit / Singh, Vandana / Ram, Sanjay K. / Kumar, Satyendra et al. | 2012
- 854936
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Inkjet printed PEDOT:PSS for organic devicesSingh, Arjun / Mandal, Saumen / Singh, Vandana / Garg, Ashish / Katiyar, Monica et al. | 2012
- 854937
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Electrical testing of the OLED matrix for analyzing defects in a PMOLED displayUttwani, Pankaj K. / Awasthi, Asha / Solanki, Ankur / Kameshwar Rao, I. V. et al. | 2012
- 854938
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White polymer light emitting diode using blend of fluorescent polymersPrakash, Asit / Katiyar, Monica et al. | 2012
- 854939
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Effect of capture and escape rates of carriers and well parameters on the performance of multi-quantum well solar cellDas, N. R. / Ghosh, Piue / Mitra, Suchismita et al. | 2012
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On the calculation of energy eigenstates of electrons in a spherical quantum dot [8549-12]Purohit, P. / Roy, D.K. / Pati, S.P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and fabrication of carbon nano-structured flexible antenna [8549-18]Lamba, V.K. / Kumar, A. / Verma, M. / Dhariwal, S. / Sharma, K. / Anand, S. / Engles, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Characterization of traps in SiGe:C channel heterojunction PMOSFETs [8549-23]Mukherjee, C. / Maiti, C.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Ozone/UV-light oxidation of multiwall carbon nanotubes (MWCNTs) [8549-40]Hussain, S. / Islam, S.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Diffusion thermopower in suspended graphene [8549-71]Vaidya, R.G. / Sankeshwar, N.S. / Mulimani, B.G. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Visible blind photodetector based on room temperature grown ZNO nanospikes array [8549-127]Maiti, S. / Maiti, U.N. / Chattopadhyay, K.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Understanding degradation mechanism of bulk heterojunction organic photovoltaic devices [8549-177]Rastogi, S. / Dharmalingam, K. / Katiyar, M. / Garg, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optical and electrical characterization of atomic layer deposited (ALD) HfO~2/p-GaAs MOS capacitors [8549-20]Das, A. / Chattopadhyay, S. / Dalapati, G.K. / Chi, D. / Kumar, M.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Semi-analytical estimation of intra-die variations of analog performances of nano-scale nMOS transistor [8549-69]Sengupta, S. / Pandit, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A resistive type humidity sensor based on ZnO-SnO~2 nanocomposite [8549-29]Tiwari, K. / Pandey, N.K. / Kumar, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Device characteristics and parameters of high performance long-channel Ge pMOSFETs with different channel-orientations [8549-116]Gupta, S.D. / Biswas, A. / Mitard, J. / Eneman, G. / De Jaeger, B. / Meuris, M. / Heyns, M.M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Tuning the photoluminescence of ZnO thin films by indium doping [8549-173]Chirakkara, S. / Krupanidhi, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Growth of nanocrystalline silicon films by VHF PECVD [8549-135]Gope, J. / Kumar, S. / Singh, S. / Rauthan, C.M.S. / Srivastava, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The impact of process-induced mechanical stress on multi-fingered device performance [8549-90]Alam, N. / Dasgupta, S. / Anand, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Controlling of short channel effects in pocket implanted Ge channel pMOSFETs with high-k gate stacks [8549-117]Mondal, C. / Biswas, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Heterojunction versus homojunction transit time devices at elevated junction temperature: performance comparison at MM wave window frequency [8549-182]Mukherjee, M. / Chakraborty, D. / Das, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design, fabrication and measurement of sub 1 dB noise figure LNA [8549-112]Tomar, S.K. / Mishra, M. / Kumar, A. / Sharma, H. / Sehgal, B.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Low cost, disposable colorimetric sensor for quantitative detection of ammonia gas [8549-51]Srivastava, R. / Verma, A. / Jain, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of graphene based field effect transistor with copper electrodes [8549-38]Srivastava, P.K. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Physical and optical properties of CuBO~2 nanopowders synthesized via sol-gel route [8549-100]Santra, S. / Das, N.S. / Chattopadhyay, K.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Electrical and reliability characteristics of oxide grown by high pressure oxidation of SiC in nitric acid vapor with different gas ambients [8549-128]Selvi, K.K. / Sreenidhi, T. / DasGupta, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of two dimensional carbon nanostructures using hot wire chemical vapor deposition technique [8549-145]Singh, M. / Jha, H.S. / Yadav, A. / Deva, D. / Agarwal, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Facile synthesis of large scale mesoporous TiO~2 microspheres by template-free hydrothermal process: their photocatalysis degradation [8549-148]Sarkar, D. / Chattopadhyay, K.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Enhanced optical absorption in silicon nanowire [8549-151]Hasan, M. / Huq, M.F. / Mahmood, Z.H. / Hussain, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The impact of a high- kappa gate dielectric on a p-channel tunnel field- effect transistor [8549-172]Chattopadhyay, A. / Mallik, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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40GHz integrated multi quantum well intermixed waveguide photodiodes [8549-129]Bhowmick, T. / Das, U. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Charge transport study of polymer light emitting diodes by impedance spectroscopy [8549-178]Bajpai, M. / Srivastava, R. / Kamalasanan, M.N. / Tiwari, R.S. / Chand, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Enhancement in charge transfer by non-ligand exchange process for colloidal hybrid organic(MEH-PPV):inorganic(CdSe) nanocomposites [8549-153]Mehta, A. / Sharma, S.N. / Singh, V.N. / Srivastva, A.K. / Chand, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of temperature conditions on the emission of ion-induced secondary electrons from MgO films [8549-200]Singh, C.B. / Sarkar, S. / Singh, V. / Ram, S.K. / Kumar, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Characterization of silicide-silicon interface contact resistivity using 1D dual transmission line model approximation of modified cross bridge Kelvin measurements [8549-21]Arya, A. / Jayaraman, B. / Bajaj, M. / Dixit, A. / Tran, C. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comparative study of dynamic characteristics of asymmetrical ATT diodes based on various semiconductor materials with increasing band-gap energy [8549-180]Mukherjee, M. / Garai, M. / Chakraborty, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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NEGF analysis of double gate SiGe and GaAs tunnel FETs [8549-154]Mishra, R. / Ghosh, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Analysis of Angelov model for 0.25μm pHEMTs [8549-108]Mongia, D. / Mishra, M. / Kumar, A. / Balakrishnan, V.R. / Sharma, H. / Sehgal, B.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Theoretical study of drain current of AlInN/GaN HEMTs on SiC substrate [8549-144]Hossain, M. / Islam, K.N. / Howlader, C.Q. / Mahmood, Z.H. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Wurtzite InN nanodots on Si(100) by molecular beam epitaxy [8549-185]Bhat, T.N. / Rajpalke, M.K. / Kumar, M. / Roul, B. / Krupanidhi, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of pulse parameter and dark count probability on the performance of a gated mode SPAD [8549-68]Das, N.R. / Das, T. / Guin, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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SiC light emitting quantized structures on silicon by spin-on technique [8549-187]Jain, D. / Sandeep, C.R. / Das, U. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Grain growth study of electrochemically deposited CuInSe2 by rapid thermal annealing in sulfur atmosphere [8549-131]Bhatia, A. / Karmarkar, M.A. / Meadows, H. / Dale, P.J. / Scarpulla, M.A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Laser-doped selective emitters for photovoltaic applications [8549-196]Woolridge, J. / Reutzel, E. / Ashok, S. / Zou, L. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Large-signal modeling of hexagonal (4H-) SiC based double drift transit time device as high-power MM-wave source at W-band window frequency [8549-181]Mukherjee, M. / Chakraborty, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling and simulation of capacitive sensor for E.Coli bacteria in water [8549-195]Dwivedi, A.K. / Deshmukh, R.B. / Patrikar, R.M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Study of energy eigenvalues and density of states of carriers in a triangular quantum wire [8549-42]Deyasi, A. / Bhattacharyya, S. / Das, N.R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Diffusion thermopower in graphene nanoribbons: effect of subbands [8549-66]Nissimagoudar, A.S. / Sankeshwar, N.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Silicon nanowire arrays using g-line photolithography [8549-183]Prajesh, R. / Tholia, H. / Agarwal, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling of photodependent capacitance for short gate-length ion-implanted GaAs MESFETs [8549-24]Tripathi, S. / Jit, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The simple theoretical analysis of the mass and molar magnetic susceptibilities in quantum wires of II-VI and IV-VI compound semiconductor [8549-6]Roy, S.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Role of diffusion and parasitic effects on the frequency response of a Si-CMOS photodetector [8549-61]Rakshit, P. / Das, N.R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of organic complementary inverter [8549-43]Yadav, S. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Silver-polypyrrole-silver structure fabrication and characterization over wide temperature [8549-156]Taunk, M. / Chand, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of capture and escape rates of carriers and well parameters on the performance of multi-quantum well solar cell [8549-70]Das, N.R. / Ghosh, P. / Mitra, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Deposition of porous low-k thin films using Tween 80 porogen for ILD application in ULSI circuits [8549-152]Mhaisagar, Y.S. / Kawishwar, R. / Joshi, B.N. / Mahajan, A.M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Measurement and analysis of source/drain contact resistance in FinFETs [8549-160]Dixit, A. / Collaert, N. / Jurczak, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An analytical modeling approach for a gate all around (GAA) tunnel field effect transistor (TFET) [8549-78]Narang, R. / Saxena, M. / Gupta, R.S. / Gupta, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Device improvement and circuit performance evaluation of complete SiGe double gate tunnel FETs [8549-155]Ghosh, B. / Mishra, R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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0.4μm high voltage CMOS smart power technology: 120V LD NMOS for integrated system on chip applications [8549-137]Patel, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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New generation MOSFET design for battery powered portable applications [8549-157]Roy, S.D. / Sodhi, R. / Sapp, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and simulation of Pt-based microhotplate, and fabrication of suspended dielectric membrane by bulk micromachining [8549-63]Prasad, M. / Yadav, R.P. / Sahula, V. / Khanna, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Hydrogenated amorphous carbon films having embedded nanoparticles deposited by cathodic jet carbon arc technique [8549-25]Panwar, O.S. / Ishpal / Tripathi, R.K. / Srivastava, A.K. / Kumar, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Noise characterization of ALD HfO~2 MOS capacitors with different metal (Au, Pd and Pt) gates [8549-134]Mallik, S. / Mukherjee, C. / Mahata, C. / Dalapati, G.K. / Chi, D.Z. / Maiti, C.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication of nano-gap electrodes using a focused ion beam for measuring electrical properties of molecular scale transistors [8549-201]Purohit, G. / Shankar, M. / Deepak / Damodaran, S. / Katiyar, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effect of Si, Sc, Cr doping on the structural, optical and discharge characteristics of MgO thin films as protective layer for plasma display panels [8549-199]Singh, C.B. / Barik, U.K. / Sarkar, S. / Singh, V. / Ram, S.K. / Dwivedi, H.K. / Kumar, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Nanocrystalline cubic silicon carbide thin films for the window layer of solar cells deposited by hot wire CVD [8549-143]Jha, H.S. / Singh, M. / Yadav, A. / Deva, D. / Agarwal, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Device oriented statistical modeling method for process variability in 45nm analog CMOS technology [8549-107]Ajayan, K.R. / Bhat, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The influence of 175 MeV nickel ion irradiation on the electrical characteristics of power transistors (HF13) [8549-53]Pushpa, N. / Praveen, K.C. / Prakash, A.P.G. / Naik, P.S. / Gupta, S.K. / Revannasiddaiah, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics [8549-126]Pati, S.P. / Tripathy, P.R. / Choudhury, S.K. / Mukharjee, M. / Purohit, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An improved SOI MESFET with triple-recessed drift region for electrical performance improvement [8549-166]Orouji, A.A. / Ghasemian, M. / Aminbeidokhti, A. / Rahmaninezhad, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design aspects of electrostatically driven MEMS adaptive mirror [8549-46]Kumar, S. / Gupta, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effects of size nonuniformity on the optical transitions in a set of realistic In~xGa~1~-~xN/GaN quantum dots, having a Gaussian distribution [8549-88]Kabi, S. / Panda, S. / Biswas, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Characterization of dislocation-based nanotransistors [8549-167]Reiche, M. / Kittler, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Nanostructured TiO~2 thin films for field emission and sensor applications [8549-188]Raut, N.C. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling of charge transport through thiophene nanowire [8549-14]Lamba, V.K. / Engles, S. / Yadav, P. / Dhanda, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Inkjet printed PEDOT:PSS for organic devices [8549-202]Singh, A. / Mandal, S. / Singh, V. / Garg, A. / Katiyar, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comprehensive charge control based analysis of the effect of donor-layer doping and donor-layer thickness on the P, R and C noise coefficients of a symmetric tied-gate InAlAs/InGaAs DG-HEMT [8549-64]Bhattacharya, M. / Jogi, J. / Gupta, R. / Gupta, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comparative study of high frequency characteristics of SiC-based SDRs [8549-45]Parida, R.K. / Panda, A.K. / Dash, G.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Tunable MEMS diffraction gratings [8549-47]Suresh, V.G. / DasGupta, N. / Bhattacharya, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Integration of MEMS with nanostructured metal-oxide materials for improved sensors for volatile organic compounds [8549-50]Chandra, S. / Pandya, H. / Vyas, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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MEMS deformable mirrors: technology and applications [8549-57]Gupta, A. / Singh, R. / Chaudhary, M. / Kumar, S. / Meena, A.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optical and I-V studies on Au-ZnO-ITO based UV-sensing devices [8549-74]Reddy J, P. / Kashyap, S. / Mishra, S. / Paul, A.K. / Kapur, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and simulation of RF MEMS SPST shunt and SPDT shunt-shunt switches for X-band and Ku-band applications [8549-84]Lenka, M.K. / Sharma, A. / Sharma, J. / DasGupta, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Development and standardization of porous silicon for application as a working electrode in electrochemical immunosensor [8549-7]Kumari, V. / Mishra, P. / Islam, S.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An InGaSb TFET with high Ion/Ioff ratio and low circuit leakage power [8549-175]Mamilla, B.K. / Nair, S. / Ghosh, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optimization of ohmic contact for the fabrication of InGaN/GaN multiple quantum well blue LED [8549-39]Sreenidhi, T. / Chatterjee, J. / DasGupta, A. / DasGupta, N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Band gap engineering of hydrogenated amorphous carbon thin films for solar cell application [8549-79]Dwivedi, N. / Kumar, S. / Dayal, S. / Rauthan, C.M.S. / Panwar, O.S. / Malik, H. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Hybrid organic (P3HT and MEH-PPV)-inorganic (CuInGaSe2) nanocomposites: charge transfer and photostability studies [8549-158]Kharkwal, A. / Sharma, S.N. / Chand, S. / Singh, A.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optimized shielded-gate trench MOSFET technology for high-frequency, high-efficiency power supplies [8549-10]Challa, A. / Sarkar, T. / Sapp, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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A comparison of 100 MeV oxygen ion and Co-60 gamma irradiation effect on 200 GHz SiGe HBTs [8549-52]Praveen, K.C. / Pushpa, N. / Tripathi, A. / Revannasiddaiah, D. / Naik, P.S. / Cressler, J.D. / Prakash, A.P.G. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Surface charging of silicon dioxide and aluminum dioxide structures [8549-105]Rathi, A. / Martin, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Growth and characterization of Al~xGa~1~-~xN on GaN/Al~2O~3 [8549-120]Jayasakthi, M. / Ramesh, R. / Arivazhagan, P. / Loganathan, R. / Prabakaran, K. / Balaji, M. / Baskar, K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Growth and properties of nonpolar a-plane GaN grown on r-sapphire by plasma assisted molecular beam epitaxy [8549-179]Rajpalke, M.K. / Bhat, T.N. / Kumar, M. / Roul, B. / Krupanidhi, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Electrical testing of the OLED matrix for analyzing defects in a PMOLED display [8549-102]Uttwani, P.K. / Awasthi, A. / Solanki, A. / Rao, I.V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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White polymer light emitting diode using blend of fluorescent polymers [8549-198]Prakash, A. / Katiyar, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Modeling the gain and bandwidth of submicron active layer n^+-i-p^+ avalanche photodiode [8549-48]Majumder, K. / Das, N.R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Impact of Ge profile on the performance of PNP SiGe HBT on thin film SOI [8549-96]Misra, P.K. / Qureshi, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Scattering analysis of 2DEG in AlGaN/GaN heterostructure grown on Fe doped GaN template [8549-132]Bag, R.K. / Tyagi, R. / Mohan, P. / Narang, K. / Verma, S. / Muralidharan, R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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RF power amplifier: pushing the boundaries of performance versus cost [8549-203]De Souza, M.M. / Chevaux, N. / Rasheduzzaman, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Metal organic chemical vapor deposition and investigation of structural, optical and gas sensing characteristics of ZnO thin film grown on quartz [8549-141]Pati, S. / Banerji, P. / Majumder, S.B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design of vertical packaging technology for RF MEMS switch [8549-16]Bansal, D. / Sharma, A. / Kaur, M. / Rangra, K.J. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optical interrogation of a pressure sensor fabricated using MEMS technology [8549-171]Dhingra, B. / Thyagarajan, K. / Chandra, S. / Tiwari, R. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Low temperature tin oxide (SnO~2) nanowire gas sensor [8549-26]Johari, A. / Bhatnagar, M.C. / Rana, V. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design and mathematical model of a ZnO-based MEMS acoustic sensor [8549-73]Prasad, M. / Yadav, R.P. / Sahula, V. / Khanna, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Optimization of cross-sectional aspect ratio of ballistic Si nanobar MOSFETs for superior current-voltage characteristics [8549-104]Chowdhury, B.N. / Singh, P. / Chattopadhyay, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Formation and optical properties of amorphous carbon film having embedded nanoparticles deposited by anodic jet carbon arc technique [8549-184]Tripathi, R.K. / Panwar, O.S. / Kesarwani, A. / Kumar, S. / Basu, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Photon decay time studies on Al~0~.~4~5Ga~1~-~0~.~5~5N/Al~0~.~1~8Ga~1~-~0~.~8~2N/Al~0~.~4~5Ga~1~-~0~.~5~5N double heterostructures grown on sapphire substrate by MOCVD [8549-125]Arivazhagan, P. / Ramesh, R. / Jayasakthi, M. / Loganathan, R. / Balaji, M. / Baskar, K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Origin and characterization of traps in organic semiconductor thin films [8549-58]Sharma, A. / Yadav, S. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Structural, electronic and optical properties of oxygen and Mn substituted ZnIn~2Te~4 chalcopyrite semiconductors [8549-194]Mishra, S. / Ganguli, B. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Digital circuit analysis of insulated shallow extension silicon on void (ISESOV) FET for low voltage applications [8549-77]Kumari, V. / Saxena, M. / Gupta, R. / Gupta, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT [8549-136]Pattanaik, S.R. / Pradhan, J. / Swain, S.K. / Panda, P. / Dash, G.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Simulation studies on heterojunction and HIT solar cells [8549-162]Patel, K. / Panwar, O.S. / Bisht, A. / Sreekumar, C. / Kumar, S. / Rauthan, C.M.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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60 and 100 MeV oxygen ion irradiation effects on electrical characteristics of bipolar transistor [8549-93]Krishnakumar, K. / Dinesh, C.M. / Khan, S.A. / Kanjilal, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Electrical characterization of gamma -Al~2O~3 thin film parallel plate capacitive sensor for trace moisture detection [8549-101]Kumar, L. / Kumar, S. / Khan, S.A. / Islam, T. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Stability study on ceramic mercuric iodide (red) x-ray sensor [8549-15]Singh, K. / Saxena, M. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Design of piezoresistive MEMS absolute pressure sensor [8549-9]Kumar, S.S. / Pant, B.D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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An analytical potential model for threshold voltage of DGMOSFET with consideration of mobile charges [8549-32]Sivasankaran, K. / Pilli, K. / Mallick, P.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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AC conductivity and dielectric studies on nickel ferrite nano-particles synthesized by sol gel technique (NT28) [8549-62]Omprakash, S. / Prakash, A.P.G. / Naik, P.S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Effects of constant voltage stressing on HfTaO~x/SiGe gate stack [8549-138]Mallik, S. / Mahata, C. / Hota, M.K. / Sarkar, C.K. / Maiti, C.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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The role of separate confinement heterostructure layer in designing semiconductor nanostructured optoelectronic devices [8549-169]Shmavonyan, G.S. / Asatryan, H.G. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Quantum confinement effect on photoluminescence of nanocrystalline ZnO thin films [8549-176]Arora, M. / Singh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Fabrication and characterization of high mobility spin-coated zinc oxide thin film transistors [8549-186]Singh, S. / Chakrabarti, P. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Bloch wave analysis for optical band structure of Ill-nitrides photonic crystals [8549-99]Ghosh, K. / Ghosh, R. / Ghosal, D. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Cl~2/Ar based inductively coupled plasma etching of GaN/AlGaN structure [8549-75]Rawal, D.S. / Arora, H. / Agarwal, V.R. / Kappor, A. / Vinayak, S. / Sehgal, B.K. / Muralidharan, R. / Saha, D. / Malik, H.K. / Indian Institute of Technology Kanpur et al. | 2012
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Structural and gas sensing properties of sprayed antimony doped tin oxide thin films [8549-113]Joshi, P.S. / Sutrave, D.S. / Jogade, S.M. / Jamadar, B.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Proton beam writing for minimum step lithography in multilayer patterning [8549-168]Sarkar, M. / Shukla, N. / Banerji, N. / Mohapatra, Y.N. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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FEM simulation of CMUT cell for NDT application [8549-92]Aditi / Mukhiya, R. / Gopal, R. / Khanna, V.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Positioning of CNTs over the gold substrate via self-assembled monolayer functionalization using dip-pen nanowriting [8549-44]Agarwal, P.B. / Sahu, S. / Kapse, P. / Gupta, S.K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Room temperature ferromagnetism in Cu doped ZnO for spintronics [8549-106]Khan, Z.A. / Ghosh, S. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Complex bandstructure of direct bandgap III-V semiconductors: application to tunneling [8549-130]Ajoy, A. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012
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Studies on the dislocation densities of gallium nitride grown by MOCVD [8549-109]Loganathan, R. / Jayasakthi, M. / Arivazhagan, P. / Ramesh, R. / Prabakaran, K. / Balaji, M. / Baskar, K. / Indian Institute of Technology Kanpur / Society of Semiconductor Devices / SPIE (Society) et al. | 2012