Edge-placement accuracy of opaque and clear defect repairs using focused ion beam technology (English)
- New search for: Raphaelian, Mark L.
- New search for: Carolan, Don
- New search for: Casey, J. David
- New search for: Doyle, Andrew F.
- New search for: Ellis, M. F.
- New search for: Ferranti, David C.
- New search for: Lessing, Joshua
- New search for: Rose, K.
- New search for: Stewart, Diane K.
- New search for: White, Roy L.
- New search for: Raphaelian, Mark L.
- New search for: Carolan, Don
- New search for: Casey, J. David
- New search for: Doyle, Andrew F.
- New search for: Ellis, M. F.
- New search for: Ferranti, David C.
- New search for: Lessing, Joshua
- New search for: Rose, K.
- New search for: Stewart, Diane K.
- New search for: White, Roy L.
In:
Proc. SPIE
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3236
; 471
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1997
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:Edge-placement accuracy of opaque and clear defect repairs using focused ion beam technology
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Contributors:Raphaelian, Mark L. ( author ) / Carolan, Don ( author ) / Casey, J. David ( author ) / Doyle, Andrew F. ( author ) / Ellis, M. F. ( author ) / Ferranti, David C. ( author ) / Lessing, Joshua ( author ) / Rose, K. ( author ) / Stewart, Diane K. ( author ) / White, Roy L. ( author )
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Conference:17th Annual BACUS Symposium on Photomask Technology and Management ; 1997 ; Redwood City,CA,USA
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Published in:Proc. SPIE ; 3236 ; 471
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Publisher:
- New search for: SPIE
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Publication date:1997-02-12
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2
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1997 mask industry quality assessment [3236-06]Eichenseer, T. / SPIE; BACUS et al. | 1997
- 2
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1997 mask industry quality assessmentEichenseer, Timothy et al. | 1997
- 19
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Advanced electron-beam pattern generation technology for 180-nm masksAbboud, Frank E. / Sauer, Charles A. / Wang, William / Vernon, Matthew / Prior, Richard / Pearce-Percy, Henry T. / Cole, Damon M. / Mankos, Marian et al. | 1997
- 19
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Advanced electron-beam pattern generation technology for 180-nm masks [3236-01]Abboud, F. E. / Sauer, C. A. / Wang, W. / Vernon, M. / SPIE; BACUS et al. | 1997
- 28
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Advantages of variable-shaped e-beam writers for mask makingEhrlich, Christian et al. | 1997
- 28
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Advantages of variable-shaped e-beam writers for mask making [3236-02]Ehrlich, C. / SPIE; BACUS et al. | 1997
- 34
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Evaluation of process capabilities for 50 keV with rectangular-shaped beam using computer simulation [3236-03]Cha, B.-C. / Kim, Y.-H. / Choi, S.-W. / Yu, Y.-H. / SPIE; BACUS et al. | 1997
- 34
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Evaluation of process capabilities for 50 keV with rectangular-shaped beam using computer simulationCha, Byung-Cheol / Kim, Yoo-Hyon / Choi, Seong-Woon / Yu, Yong H. / Sohn, Jung-Min et al. | 1997
- 42
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Performance of a new high-NA scanned-laser mask lithography systemHamaker, Henry Chris / Buck, Peter D. et al. | 1997
- 42
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Performance of a new high-NA scanned-laser mask lithography system [3236-04]Hamaker, H. C. / Buck, P. D. / SPIE; BACUS et al. | 1997
- 55
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Cost-effective pattern generation for 64-Mb and 256-Mb photomasksLiden, Per et al. | 1997
- 55
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Cost-effective pattern generation for 64-Mb and 256-Mb photomasks [3236-05]Liden, P. / SPIE; BACUS et al. | 1997
- 64
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Evaluation of a next-generation vector electron-beam mask pattern lithography system [3236-61]Rose, C. / Wang, L. C. / Justen, J. P. / Ferreira, M. / SPIE; BACUS et al. | 1997
- 64
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Evaluation of a next-generation vector electron-beam mask pattern lithography systemRose, Carl M. / Wang, Lawrence C. / Justen, James P. / Ferreira, Manny et al. | 1997
- 76
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Film stress and geometry effects in chrome photomask cleaning damage [3236-07]Alpay, H. U. / Wood, J. L. / Kalk, F. D. / SPIE; BACUS et al. | 1997
- 76
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Film stress and geometry effects in chrome photomask cleaning damageAlpay, H. Ufuk / Wood, James L. / Kalk, Franklin D. et al. | 1997
- 82
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Performance of positive-tone chemically amplified resists for next-generation photomask fabricationSegawa, Toshikazu / Kurihara, Masa-aki / Sasaki, Shiho / Inomata, Hiroyuki / Hayashi, Naoya / Sano, Hisatake et al. | 1997
- 82
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Performance of positive-tone chemically amplified resists for next-generation photomask fabrication [3236-08]Segawa, T. / Kurihara, M. / Sasaki, S. / Inomata, H. / SPIE; BACUS et al. | 1997
- 94
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Plasma etching of Cr photomasks: optimization of process conditions and CD controlConstantine, Chris / Johnson, David J. / Westerman, Russell J. / Coleman, Thomas P. / Faure, Thomas B. / Dubuque, Leonard F. et al. | 1997
- 94
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Plasma etching of Cr photomasks: optimization of process conditions and CD control [3236-10]Constantine, C. / Johnson, D. J. / Westerman, R. J. / Coleman, T. P. / SPIE; BACUS et al. | 1997
- 106
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New methodology for thoroughly characterizing the performance of advanced reticle inspection platforms [3236-11]Eynon, B. G. / SPIE; BACUS et al. | 1997
- 106
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New methodology for thoroughly characterizing the performance of advanced reticle inspection platformsEynon, Benjamin G. et al. | 1997
- 114
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Improved image acquistion for advanced reticle inspection [3236-12]Eran, Y. / Greenberg, G. / Segev, A. / SPIE; BACUS et al. | 1997
- 114
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Improved image acquistion for advanced reticle inspectionEran, Yair / Greenberg, Gad / Segev, Avner et al. | 1997
- 124
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Clear-field reticle defect disposition for advanced sub-half-micron lithographyIbsen, Kent B. / Ilzhoefer, John R. / Eickhoff, Mark D. et al. | 1997
- 124
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Clear-field reticle defect disposition for advanced sub-half-micron lithography [3236-13]Ibsen, K. B. / Ilzhoefer, J. R. / Eickhoff, M. D. / SPIE; BACUS et al. | 1997
- 136
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Printability and repair techniques for DUV photomasksGans, Fritz / Jess, Marion / Kohlpoth, Stephanie / Pforr, Rainer et al. | 1997
- 136
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Printability and repair techniques for DUV photomasks [3236-14]Gans, F. / Jess, M. / Kohlpoth, S. / Pforr, R. / SPIE; BACUS et al. | 1997
- 142
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Integration of KLA Starlight for phase-shift mask manufacturing [3236-15]Rigaill, D. M. / SPIE; BACUS et al. | 1997
- 142
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Integration of KLA Starlight for phase-shift mask manufacturingRigaill, Denis M. et al. | 1997
- 154
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Initial characterization results of a low-voltage CD SEM for reticle metrologyQuattrini, Rich / MacNaughton, Craig W. / Elliott, Richard C. / Ng, Waiman / Malhotra, Rohit / Ananth, Mohan / Yee, Jason C. et al. | 1997
- 154
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Initial characterization results of a low-voltage CD SEM for reticle metrology [3236-16]Quattrini, R. / MacNaughton, C. W. / Elliott, R. C. / Ng, W. / SPIE; BACUS et al. | 1997
- 160
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New electron microscope system for pattern placement metrologyBosse, Harald / Haessler-Grohne, Wolfgang et al. | 1997
- 160
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New electron microscope system for pattern placement metrology [3236-17]Bosse, H. / Haessler-Grohne, W. / SPIE; BACUS et al. | 1997
- 170
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Measuring critical dimensions and overlays as prescribed by the National Technology Roadmap for Semiconductors [3236-18]Rizvi, S. A. / SPIE; BACUS et al. | 1997
- 170
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Measuring critical dimensions and overlays as prescribed by the National Technology Roadmap for SemiconductorsRizvi, Syed A. et al. | 1997
- 176
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Fabrication of submicrometer photomask linewidth standardsTarascon-Auriol, Regine G. / Talene, Norbert / Sadran, Dominique / Doyle, Gary F. / Nunn, John W. et al. | 1997
- 176
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Fabrication of submicrometer photomask linewidth standards [3236-19]Tarascon-Auriol, R. G. / Talene, N. / Sadran, D. / Doyle, G. F. / SPIE; BACUS et al. | 1997
- 188
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Next-generation mask strategy: are technologies ready for mass production of 256 MDRAM? Summary of Photomask Japan '97 panel discussion [3236-20]Morimoto, H. / Hayashi, N. / Hamada, H. / SPIE; BACUS et al. | 1997
- 188
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Next-generation mask strategy: are technologies ready for mass production of 256 MDRAM? Summary of Photomask Japan '97 panel discussionMorimoto, Hiroaki / Hayashi, Naoya / Hamada, Hideaki et al. | 1997
- 190
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Yield, metrology, and inspection characteristics of SCALPEL masks [3236-21]Peabody, M. L. / Blakey, M. I. / Farrow, R. C. / Kasica, R. J. / SPIE; BACUS et al. | 1997
- 190
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Yield, metrology, and inspection characteristics of SCALPEL masksPeabody, Milton L. / Blakey, Myrtle I. / Farrow, Reginald C. / Kasica, Richard J. / Liddle, James A. / Novembre, Anthony E. / Saunders, Thomas E. / Tennant, Donald M. / Windt, David L. et al. | 1997
- 195
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Focused ion beam repair of 193-nm reticle at 0.18-μm design rulesYan, Pei-yang / Remling, Roswitha et al. | 1997
- 195
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Focused ion beam repair of 193-nm reticle at 0.18-m design rules [3236-22]Yan, P. / Remling, R. / SPIE; BACUS et al. | 1997
- 202
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Evaluation of resist models for fast optical proximity correctionDolainsky, Christoph / Maurer, Wilhelm / Waas, Thomas et al. | 1997
- 202
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Evaluation of resist models for fast optical proximity correction [3236-23]Dolainsky, C. / Maurer, W. / Waas, T. / SPIE; BACUS et al. | 1997
- 208
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100-nm defect detection using an existing image acquisition system [3236-24]Vacca, A. / Eynon, B. G. / Yeomans, S. / SPIE; BACUS et al. | 1997
- 208
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100-nm defect detection using an existing image acquisition systemVacca, Anthony / Eynon, Benjamin G. / Yeomans, Steve et al. | 1997
- 216
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Electron-beam lithography simulation for mask making: IMack, Chris A. et al. | 1997
- 216
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Electron-beam lithography simulation for mask making: I [3236-25]Mack, C. A. / SPIE; BACUS et al. | 1997
- 228
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Detection of submicron phase defects on multiphase random logic reticles [3236-26]Spence, C. A. / Nistler, J. L. / Arnold, W. H. / Emery, D. / SPIE; BACUS et al. | 1997
- 228
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Detection of submicron phase defects on multiphase random logic reticlesSpence, Chris A. / Nistler, John L. / Arnold, William H. / Emery, David / Zurbrick, Larry S. / Prakash, Durai P. / Chang, X. / Khanna, Steve / Leback, Brent D. / Tsujimoto, Eiji et al. | 1997
- 243
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Novel alternating phase-shift mask with improved phase accuracy [3236-28]Ishiwata, N. / Kobayashi, T. / Asai, S. / Hanyu, I. / SPIE; BACUS et al. | 1997
- 243
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Novel alternating phase-shift mask with improved phase accuracyIshiwata, Naoyuki / Kobayashi, Takema / Asai, Satoru / Hanyu, Isamu et al. | 1997
- 250
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Tritone PSM and its performanceKohzuma, Makoto / Chiba, Kazuaki / Unno, Hiromasa / Kikuchi, Yasutaka / Yamada, Yoshiro / Otaki, Masao et al. | 1997
- 250
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Tritone PSM and its performance [3236-29]Kohzuma, M. / Chiba, K. / Unno, H. / Kikuchi, Y. / SPIE; BACUS et al. | 1997
- 266
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Impact of photomasks on linewidth variation [3236-30]Gleason, R. E. / Liu, H.-Y. / SPIE; BACUS et al. | 1997
- 266
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Impact of photomasks on linewidth variationGleason, Robert E. / Liu, Hua-Yu et al. | 1997
- 275
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Demonstrating next-generation CD uniformity with today's tools and processesWaelpoel, Jacques A. / van Schoot, Jan B. / Zanzal, Andrew G. et al. | 1997
- 275
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Demonstrating next-generation CD uniformity with today's tools and processes [3236-66]Waelpoel, J. A. / Van Schoot, J. / Zanzal, A. G. / SPIE; BACUS et al. | 1997
- 284
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Photomask metrology in the era of neolithography [3236-32]Potzick, J. E. / SPIE; BACUS et al. | 1997
- 284
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Photomask metrology in the era of neolithographyPotzick, James E. et al. | 1997
- 293
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Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beam [3236-33]Yoshitake, S. / Ogawa, Y. / Sakurai, H. / Itoh, M. / SPIE; BACUS et al. | 1997
- 293
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Practical approach to evaluating mask CD uniformity patterned by a variable-shaped beamYoshitake, Shusuke / Ogawa, Yoji / Sakurai, Hideaki / Itoh, Masamitsu / Higashikawa, Iwao / Nakayamada, Noriaki / Matsuki, Kazuto / Tamamushi, Shuichi et al. | 1997
- 301
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Current status of mask CD uniformity as related to e-beam system [3236-35]Lim, S.-C. / Kim, B.-G. / Choi, S.-W. / Lee, K.-H. / SPIE; BACUS et al. | 1997
- 301
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Current status of mask CD uniformity as related to e-beam systemLim, Sung-Chul / Kim, Byung G. / Choi, Seong-Woon / Lee, Kyung H. / Cho, Hyun J. / Yu, Yong H. / Cho, Hanku / Sohn, Jung-Min et al. | 1997
- 312
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On the way to 1 Gb: demonstration of e-beam proximity effect correction for mask makingRosenbusch, Anja / Kalus, Christian K. / Endo, Hiroyuki / Kimura, Yasuki / Endo, Akihiro et al. | 1997
- 312
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On the way to 1 Gb: demonstration of e-beam proximity effect correction for mask making [3236-36]Rosenbusch, A. / Kalus, C. K. / Endo, H. / Kimura, Y. / SPIE; BACUS et al. | 1997
- 319
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Comparison of line shortening assessed by aerial image and wafer measurementsZiegler, Wolfram / Pforr, Rainer / Thiele, Joerg / Maurer, Wilhelm et al. | 1997
- 319
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Comparison of line shortening assessed by aerial image and wafer measurements [3236-37]Ziegler, W. / Pforr, R. / Thiele, J. / Maurer, W. / SPIE; BACUS et al. | 1997
- 328
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Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimizationLiu, Hua-Yu / Karklin, Linard / Wang, Yao-Ting / Pati, Yagyensh C. et al. | 1997
- 328
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Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization [3236-38]Liu, H.-Y. / Karklin, L. / Wang, Y.-T. / Pati, Y. C. / SPIE; BACUS et al. | 1997
- 340
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Manufacture of photomasks for critical layers of sub-half-micron CMOS technologyMartin, Brian / Waring, Tim R. et al. | 1997
- 340
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Manufacture of photomasks for critical layers of sub-half-micron CMOS technology [3236-34]Martin, B. / Waring, T. R. / SPIE; BACUS et al. | 1997
- 350
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Automatic gate CD control for a full-chip-scale SRAM devicePark, Chul-Hong / Kim, Tae K. / Lee, Hoong-Joo / Kong, Jeong-Taek / Lee, Sang-Hoon et al. | 1997
- 350
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Automatic gate CD control for a full-chip-scale SRAM device [3236-41]Park, C.-H. / Kim, T.-K. / Lee, H.-J. / Kong, J.-T. / SPIE; BACUS et al. | 1997
- 358
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Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturing [3236-42]Kim, Y.-H. / Cha, B.-C. / Lee, H.-J. / Sohn, J.-M. / SPIE; BACUS et al. | 1997
- 358
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Three-dimensional electron-beam lithography simulator V2.0 for the gigabit-era photomask manufacturingKim, Yoo-Hyon / Cha, Byung-Cheol / Lee, Hoong-Joo / Sohn, Jung-Min / Kong, Jeong-Taek / Lee, Sang-Hoon et al. | 1997
- 366
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Accurate and repeatable mask defect measurements for quarter-micron technologyFiekowsky, Peter et al. | 1997
- 366
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Accurate and repeatable mask defect measurements for quarter-micron technology [3236-43]Fiekowsky, P. / SPIE; BACUS et al. | 1997
- 372
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Advanced photomask reconstruction with the Seiko SIR 3000Ruatta, Stephen A. / Smith, Eryn L. / Yasaka, Anto et al. | 1997
- 372
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Advanced photomask reconstruction with the Seiko SIR 3000 [3236-44]Ruatta, S. A. / Smith, E. L. / Yasaka, A. / SPIE; BACUS et al. | 1997
- 382
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OPC technology road map to 0.14-μm design rulesChen, J. Fung / Laidig, Thomas L. / Wampler, Kurt E. / Caldwell, Roger F. / Naderi, Alex R. / Van Den Broeke, Douglas J. et al. | 1997
- 382
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OPC technology road map to 0.14-m design rules [3236-45]Chen, J. F. / Laidig, T. / Wampler, K. E. / Caldwell, R. F. / SPIE; BACUS et al. | 1997
- 397
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Comparison of EBR-900 M1 and ZEP 7000 with plasma-etch processing for MEBES 4500SColeman, Thomas P. / Alexander, David W. / Lu, Maiying et al. | 1997
- 397
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Comparison of EBR-900 M1 and ZEP 7000 with plasma-etch processing for MEBES 4500S [3236-48]Coleman, T. P. / Alexander, D. / Lu, M. / SPIE; BACUS et al. | 1997
- 405
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Characterization and modeling of CD performance with thin PBS [3236-49]Dean, R. L. / Sauer, C. A. / SPIE; BACUS et al. | 1997
- 405
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Characterization and modeling of CD performance with thin PBSDean, Robert L. / Sauer, Charles A. et al. | 1997
- 413
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Electron-beam lithography simulation for mask making: II. Comparison of the lithographic performance of PBS and EBR 900-M1 [3236-50]Sauer, C. A. / Alexander, D. / Mack, C. A. / SPIE; BACUS et al. | 1997
- 413
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Electron-beam lithography simulation for mask making: II. Comparison of the lithographic performance of PBS and EBR 900-M1Sauer, Charles A. / Alexander, David W. / Mack, Chris A. et al. | 1997
- 424
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Accuracy of 3D optical lithography simulation for advanced reticles [3236-51]Hollman, R. F. / Mack, C. A. / SPIE; BACUS et al. | 1997
- 424
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Accuracy of 3D optical lithography simulation for advanced reticlesHollman, Richard F. / Mack, Chris A. et al. | 1997
- 430
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Defect inspection and printability of deep-UV halftone phase-shifting mask [3236-52]Kim, H.-J. / Hong, J.-S. / Kye, J.-W. / Cha, D.-H. / SPIE; BACUS et al. | 1997
- 430
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Defect inspection and printability of deep-UV halftone phase-shifting maskKim, Hyoungjoon / Hong, Jin / Kye, Jongwook / Cha, DongHo / Kang, Hoyoung / Moon, Joo-Tae et al. | 1997
- 441
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Printability of 1 x reticle defects for submicron design rules [3236-54]Schurz, D. L. / Flack, W. W. / Newman, G. / SPIE; BACUS et al. | 1997
- 441
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Printability of 1 x reticle defects for submicron design rulesSchurz, Dan L. / Flack, Warren W. / Newman, Gary et al. | 1997
- 456
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Marathon damage testing of pellicles for 193-nm lithographyGrenville, Andrew / Liberman, Vladimir / Kunz, Roderick R. / Rothschild, Mordechai / Sedlacek, Jan H. C. / Uttaro, Ray S. et al. | 1997
- 456
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Marathon damage testing of pellicles for 193-nm lithography [3236-55]Grenville, A. / Liberman, V. / Kunz, R. R. / Rothschild, M. / SPIE; BACUS et al. | 1997
- 464
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Software tool for temperature simulation in electron-beam lithography: TEMPTATIONBabin, Sergey V. / Kuzmin, Igor Y. / Sergeev, G. et al. | 1997
- 464
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Software tool for temperature simulation in electron-beam lithography: TEMPTATION [3236-56]Babin, S. V. / Kuzmin, I. Y. / Sergeev, G. / SPIE; BACUS et al. | 1997
- 471
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Edge-placement accuracy of opaque and clear defect repairs using focused ion beam technology [3236-57]Raphaelian, M. L. / Carolan, D. / Casey, J. D. / Doyle, A. F. / SPIE; BACUS et al. | 1997
- 471
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Edge-placement accuracy of opaque and clear defect repairs using focused ion beam technologyRaphaelian, Mark L. / Carolan, Don / Casey, J. David / Doyle, Andrew F. / Ellis, M. F. / Ferranti, David C. / Lessing, Joshua / Rose, K. / Stewart, Diane K. / White, Roy L. et al. | 1997
- 487
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Chemically enhanced FIB repair of opaque defects on molybdenum silicide photomasks [3236-58]Casey, J. D. / Doyle, A. F. / Stewart, D. K. / Ferranti, D. C. / SPIE; BACUS et al. | 1997
- 487
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Chemically enhanced FIB repair of opaque defects on molybdenum silicide photomasksCasey, J. David / Doyle, Andrew F. / Stewart, Diane K. / Ferranti, David C. / Raphaelian, Mark L. / Morgan, John C. et al. | 1997
- 498
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PBS performance evaluation under a high-accelerating-voltage e-beam exposureKobayashi, Hideo / Higuchi, Takao / Asakawa, Keishi / Yokoya, Yasunori et al. | 1997
- 498
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PBS performance evaluation under a high-accelerating-voltage e-beam exposure [3236-59]Kobayashi, H. / Higuchi, T. / Asakawa, K. / Yokoya, Y. / SPIE; BACUS et al. | 1997
- 511
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Analysis of defect classification and sizing information with a dedicated white-light/laser-confocal microscope review station [3236-63]Xu, J. / Norton, K. / Worster, B. / Du, C. / SPIE; BACUS et al. | 1997
- 511
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Analysis of defect classification and sizing information with a dedicated white-light/laser-confocal microscope review stationXu, James / Norton, Kent / Worster, Bruce / Du, Cecelia / Lum, Gary / Allard, Marc E. et al. | 1997
- 522
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Is mask repair economic? [3236-64]Smith, W. / SPIE; BACUS et al. | 1997
- 522
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Is mask repair economic?Smith, Wayne et al. | 1997
- 531
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Mask technology for excimer laser projection ablationSpeidell, James L. / Cordes, Steven A. / Patel, Rajesh S. et al. | 1997
- 531
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Mask technology for excimer laser projection ablation [3236-65]Speidell, J. L. / Cordes, S. A. / Patel, R. S. / SPIE; BACUS et al. | 1997
- 544
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Attenuated phase-shift masks reducing side-lobe effect in DRAM peripheral circuit regionIwasaki, Haruo / Hoshi, Keiichi / Tanabe, Hiroyoshi / Kasama, Kunihiko et al. | 1997
- 544
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Attenuated phase-shift masks reducing side-lobe effect in DRAM peripheral circuit region [3236-67]Iwasaki, H. / Hoshi, K. / Tanabe, H. / Kasama, K. / SPIE; BACUS et al. | 1997