EUV mask cleaning by dry and wet processes (English)
- New search for: Nii, Hajime
- New search for: Kinoshita, Hiroo
- New search for: Watanabe, Takeo
- New search for: Matsuo, Y.
- New search for: Sugie, Y.
- New search for: Nii, Hajime
- New search for: Kinoshita, Hiroo
- New search for: Watanabe, Takeo
- New search for: Matsuo, Y.
- New search for: Sugie, Y.
In:
Proc. SPIE
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4409
; 687
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2001
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ISBN:
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ISSN:
- Conference paper / Electronic Resource
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Title:EUV mask cleaning by dry and wet processes
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Contributors:Nii, Hajime ( author ) / Kinoshita, Hiroo ( author ) / Watanabe, Takeo ( author ) / Matsuo, Y. ( author ) / Sugie, Y. ( author )
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Conference:Photomask and Next-Generation Lithography Mask Technology VIII ; 2001 ; Kanagawa,Japan
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Published in:Proc. SPIE ; 4409 ; 687
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Publisher:
- New search for: SPIE
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Publication date:2001-09-05
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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New mask technology challenges (Invited Paper) [4409-90]Kimmel, K. R. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 1
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New mask technology challengesKimmel, Kurt R. et al. | 2001
- 12
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Impact of embedded DRAM logic devices on semiconductor manufacturingHirayama, Teruo / Ezaki, T. / Ouchi, N. et al. | 2001
- 12
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Impact of embedded DRAM logic devices on semiconductor manufacturing (Invited Paper) [4409-02]Hirayama, T. / Ezaki, T. / Ouchi, N. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 23
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Resolution enhancement techniques in optical lithography: It's not just a mask problem (Invited Paper) [4409-13]Liebmann, L. W. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 23
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Resolution enhancement techniques in optical lithography: It's not just a mask problemLiebmann, Lars W. et al. | 2001
- 33
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Simulation of image quality issues at low k1for 100-nm lithographyNeureuther, Andrew R. / Adam, Konstantinos / Hotta, Shoji / Pistor, Thomas V. / Robins, Garth / Deng, Yunfei et al. | 2001
- 33
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Simulation of image quality issues at low k~1 for 100-nm lithography (Invited Paper) [4409-77]Neureuther, A. R. / Adam, K. / Hotta, S. / Pistor, T. V. / Robbins, G. / Deng, Y. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 41
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New optimization method of exposure with alternative phase-shifting masks [4409-79]Kikuchi, K. / Ohnuma, H. / Kawahira, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 41
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New optimization method of exposure with alternative phase-shifting masksKikuchi, Koji / Ohnuma, Hidetoshi / Kawahira, Hiroichi et al. | 2001
- 52
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Optimization of alternating phase-shift mask structure for ArF laser lithography [4409-16]Yamamoto, T. / Ishiwata, N. / Yanagishita, Y. / Kobayashi, T. / Asai, S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 52
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Optimization of alternating phase-shift mask structure for ArF laser lithographyYamamoto, Tomohiko / Ishiwata, Naoyuki / Yanagishita, Yuichiro / Kobayashi, Takema / Asai, Satoru et al. | 2001
- 61
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(Sub-) 100-nm gate patterning using 248-nm alternating PSMVandenberghe, Geert / Jaenen, Patrick / Jonckheere, Rik M. / Ronse, Kurt G. / Toublan, Olivier et al. | 2001
- 61
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(sub-) 100-nm gate patterning using 248-nm alternating PSM [4409-89]Vandenberghe, G. N. / Jaenen, P. / Jonckheere, R. M. / Ronse, K. / Toublan, O. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 70
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Impact of ArF attenuated PSM using multishifter layer (TiN/Si~3N~4) for next-generation lithography [4409-78]Nam, K.-H. / Kim, L.-J. / Jeong, H.-S. / Lee, S.-W. / Lee, I.-S. / Shin, C. / Kim, H.-S. / Dieu, L. / Paek, S. W. / Koo, S.-S. et al. | 2001
- 70
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Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithographyNam, Kyung-Han / Kim, Lee-Ju / Jeong, Hyoung-Sup / Lee, Sang W. / Lee, In-Soo / Shin, Cheol / Kim, Hong-Seok / Dieu, L. / Paek, Seung-Weon / Koo, Sang-Sool et al. | 2001
- 81
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Fabricating 100-nm line patterns with high-transmittance ArF attenuated phase-shift masks [4409-14]Iwasaki, H. / Ishida, S. / Tonai, K. / Nozue, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 81
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Fabricating 100-nm line patterns with high-transmittance ArF attenuated phase-shift masksIwasaki, Haruo / Ishida, Shinji / Tonai, K. / Nozue, Hiroshi et al. | 2001
- 94
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Prediction of MEEF using a simple model and MEEF enhancement parametersChung, Dong-Hoon / Yang, Seung-Hune / Kim, Hyung-Do / Shin, In-Gyun / Kim, Yong-Hoon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 94
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Prediction of MEEF using a simple model and MEEF enhancement parameters [4409-23]Chung, D.-H. / Yang, S.-H. / Kim, H.-D. / Shin, I.-G. / Kim, Y.-H. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 101
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Quantitative analysis of mask error effect on wafer CD variation in ArF lithographyKim, Sang-Jin / Koo, Sang-Sool / Kim, Seo-Min / Ahn, Chang-Nam / Ham, Young-Mog / Shin, Ki-Soo et al. | 2001
- 101
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Quantitative analysis of mask error effect on wafer CD variation in ArF lithography [4409-24]Kim, S.-J. / Koo, S.-S. / Kim, S.-M. / Ahn, C.-N. / Ham, Y.-M. / Shin, K.-S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 108
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Reticle quality needs for advanced 193-nm lithographyJonckheere, Rik M. / Vandenberghe, Geert / Wiaux, Vincent / Verhaegen, Staf / Ronse, Kurt G. et al. | 2001
- 108
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Reticle quality needs for advanced 193-nm lithography [4409-25]Jonckheere, R. M. / Vandenberghe, G. N. / Wiaux, V. / Verhaegen, S. / Ronse, K. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 118
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Application of multistep quartz etching method to strong PSMs [4409-15]Kim, H.-D. / Kim, Y.-H. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 118
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Application of multistep quartz etching method to strong PSMsKim, Hyoungdo / Kim, Yong-Hoon / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 125
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Optimization of fabrication process for dual-trench-type alternating PSMKomizo, Tooru / Kagami, Ichiro / Kakuta, Daichi / Kawahira, Hiroichi et al. | 2001
- 125
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Optimization of fabrication process for dual-trench-type alternating PSM [4409-21]Komizo, T. / Kagami, I. / Kakuta, D. / Kawahira, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 132
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100-nm alternating PSM structure discussion for ArF lithographyMorikawa, Yasutaka / Kokubo, Haruo / Nara, Masami / Miyashita, Hiroyuki / Hayashi, Naoya et al. | 2001
- 132
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100-nm alternating PSM structure discussion for ArF lithography [4409-22]Morikawa, Y. / Kokubo, H. / Nara, M. / Miyashita, H. / Hayashi, N. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 147
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ZrSiON as a material for high-transmittance attenuated PSM [4409-17]Kanayama, K. / Haraguchi, T. / Yamazaki, T. / Ii, T. / Matsuo, T. / Fukuhara, N. / Saga, T. / Hattori, Y. / Ooshima, T. / Otaki, M. et al. | 2001
- 147
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ZrSiON as a material for high-transmittance attenuated PSMKanayama, Koichiro / Haraguchi, Takashi / Yamazaki, Tsukasa / Ii, Toshihiro / Matsuo, Tadashi / Fukuhara, Nobuhiko / Saga, Tadashi / Hattori, Yusuke / Ooshima, Takashi / Otaki, Masao et al. | 2001
- 155
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Development of bilayered TaSiO~x-HTPSM: I [4409-18]Motonaga, T. / Ohtsuki, M. / Kinase, Y. / Nakagawa, H. / Yokoyama, T. / Mohri, H. / Fujikawa, J. / Hayashi, N. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 155
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Development of bilayered TaSiOx-HTPSM: IMotonaga, Toshiaki / Ohtsuki, M. / Kinase, Y. / Nakagawa, H. / Yokoyama, Toshifumi / Mohri, Hiroshi / Fujikawa, Junji / Hayashi, Naoya et al. | 2001
- 164
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Development of bilayered TaSiOx-HTPSM: IIYokoyama, Toshifumi / Yusa, S. / Okamura, T. / Nakagawa, H. / Motonaga, Toshiaki / Mohri, Hiroshi / Fujikawa, Junji / Hayashi, Naoya et al. | 2001
- 164
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Development of bilayered TaSiO~x-HTPSM: II [4409-19]Yokoyama, T. / Yusa, S. / Okamura, T. / Nakagawa, H. / Motonaga, T. / Mohri, H. / Fujikawa, J. / Hayashi, N. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 172
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RuMBa: a rule-model OPC for low MEEF 130-nm KrF lithographyHsu, Stephen / Shi, Xuelong / Hsu, Chungwei Michael / Corcoran, Noel P. / Chen, J. Fung / Desai, Sunil / Sherrill, Micheal J. / Tseng, Y. C. / Chang, H. A. / Kao, J. F. et al. | 2001
- 172
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RuMBa: a rule-model OPC for low MEEF 130-nm KrF lithography [4409-92]Hsu, S. / Shi, X. / Hsu, M. / Corcoran, N. P. / Chen, J. F. / Desai, S. / Sherrill, M. J. / Tseng, Y. C. / Chang, H. A. / Kao, J. F. et al. | 2001
- 186
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New mask data verification method after optical proximity effect correctionOgawa, Kazuhisa / Ashida, Isao / Kawahira, Hiroichi et al. | 2001
- 186
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New mask data verification method after optical proximity effect correction [4409-20]Ogawa, K. / Ashida, I. / Kawahira, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 194
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Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correctionMack, Chris A. et al. | 2001
- 194
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Electron-beam lithography simulation for mask making: VI. Comparison of 10- and 50-kV GHOST proximity effect correction [4409-35]Mack, C. A. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 204
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Pattern shape analysis tool for quantitative estimate of photomask and processYonekura, Isao / Fukushima, Yuhichi / Matsuo, Fuyuhiko / Otaki, Masao / Fukugami, Norihito et al. | 2001
- 204
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Pattern shape analysis tool for quantitative estimate of photomask and process [4409-40]Yonekura, I. / Fukushima, Y. / Matsuo, F. / Otaki, M. / Fukugami, N. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 212
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Enhanced capability improvement using OPC pattern generation in laser lithography [4409-26]Lee, I.-S. / Nam, K.-H. / Kim, L.-J. / Shin, C. / Kim, H.-S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 212
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Enhanced capability improvement using OPC pattern generation at laser lithographyLee, In-Soo / Nam, Kyung-Han / Kim, Lee-Ju / Shin, Cheol / Kim, Hong-Seok et al. | 2001
- 221
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Laser proximity correction for advanced mask manufacturing [4409-58]Chang, M. / Yu, A. / Chen, J. / Lin, J. / Huang, J. / Hsu, F. / Liu, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 221
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Laser proximity correction for advanced mask manufacturingChang, Michael / Yu, A. / Chen, J. / Lin, J. / Huang, Jason H. / Hsu, F. / Liu, Hua-Yu et al. | 2001
- 228
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High-productivity mask writer with broad operating rangeBaik, Ki-Ho / Chakarian, Varoujan / Dean, Bob / Lu, Maiying / Naber, Robert J. / Newman, Thomas H. / Wiltse, Mark / Abboud, Frank E. et al. | 2001
- 228
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High-productivity mask writer with broad operating range [4409-84]Baik, K.-H. / Chakarian, V. / Dean, B. / Lu, M. / Naber, R. J. / Newman, T. H. / Wiltse, M. / Abboud, F. E. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 238
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Writing accuracy of EBM-3500 electron-beam mask writing systemOhtoshi, Kenji / Sunaoshi, Hitoshi / Takamatsu, Jun / Okabe, Fumiyuki / Ishibashi, K. / Yoshitake, Shusuke / Yamada, Hirokazu / Tamamushi, Shuichi / Anze, Hirohito / Kamikobo, T. et al. | 2001
- 238
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Writing accuracy of EBM-3500 electron-beam mask writing system [4409-86]Ohtoshi, K. / Sunaoshi, H. / Takamatsu, J. / Okabe, F. / Ishibashi, K. / Yoshitake, S. / Yamada, H. / Tamamushi, S. / Anze, H. / Kamikobo, T. et al. | 2001
- 248
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Performance of improved e-beam lithography system JBX-9000MVII [4409-87]Komagata, T. / Nakagawa, Y. / Gotoh, N. / Tanaka, K. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 248
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Performance of improved e-beam lithography system JBX-9000MVIIKomagata, Tadashi / Nakagawa, Yasutoshi / Gotoh, Nobuo / Tanaka, Kazumitsu et al. | 2001
- 258
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Advanced e-beam reticle writing system for next-generation reticle fabrication [4409-88]Fujii, A. / Mizuno, K. / Nakahara, T. / Asai, S. / Kadowaki, Y. / Shimada, H. / Touda, H. / Iizumi, K. / Takahashi, H. / Oonuki, K. et al. | 2001
- 258
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Advanced e-beam reticle writing system for next-generation reticle fabricationFujii, Akira / Mizuno, Kazui / Nakahara, Tetsuji / Asai, Suyo / Kadowaki, Yasuhiro / Shimada, Hajime / Touda, Hiroshi / Iizumi, Ken / Takahashi, Hiroyuki / Oonuki, Kazuyoshi et al. | 2001
- 270
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Sigma7100: a new architecture for laser pattern generators for 130 nm and beyond [4409-85]Sandstrom, T. / Fillion, T. I. / Ljungblad, U. B. / Rosling, M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 270
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Sigma7100: a new architecture for laser pattern generators for 130 nm and beyondSandstrom, Torbjoern / Fillion, Timothy I. / Ljungblad, Ulric B. / Rosling, Mats et al. | 2001
- 277
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Improvement of photomask repeater for 130-nm lithographyKyoh, Suigen / Inoue, Soichi / Mori, Ichiro / Irie, Nobuyuki / Ishii, Yuuki / Umatate, Toshikazu / Kokubo, Haruo / Hayashi, Naoya et al. | 2001
- 277
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Improvement of photomask repeater for 130-nm lithography [4409-57]Kyoh, S. / Inoue, S. / Mori, I. / Irie, N. / Ishii, Y. / Umatate, T. / Kokubo, H. / Hayashi, N. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 287
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High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask makingHuang, Wu-Song / Kwong, Ranee W. / Moreau, Wayne M. / Lang, Robert / Robinson, Christopher F. / Medeiros, David R. / Petrillo, Karen E. / Aviram, Ari / Mahorowala, Arpan P. / Angelopoulos, Marie et al. | 2001
- 287
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High-performance e-beam resist coupling excellent dry etch resistance and sub-100-nm resolution for advanced mask making [4409-03]Huang, W.-S. / Kwong, R. W. / Moreau, W. M. / Lang, R. / Robinson, C. F. / Medeiros, D. R. / Petrillo, K. E. / Aviram, A. / Mahorowala, A. P. / Angelopoulos, M. et al. | 2001
- 298
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Resolution improvement of chemical-amplification resist using process-induced effect correctionChoi, Ji-Hyeon / Kim, Chang-Hwan / Lee, Jeong-Yun / Moon, Seong-Yong / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 298
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Resolution improvement of chemical-amplification resist using process-induced effect correction [4409-04]Choi, J.-H. / Kim, C.-Y. / Lee, J.-Y. / Moon, S.-W. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 306
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Photoresist processing for high-resolution DUV lithography at 257 nm [4409-05]Fuller, S. E. / Montgomery, W. / Albelo, J. A. / Rodrigues, W. / Buxbaum, A. H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 306
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Photoresist processing for high-resolution DUV lithography at 257 nmFuller, Scott E. / Montgomery, Warren / Albelo, Jeff A. / Rodrigues, William / Buxbaum, Alex H. et al. | 2001
- 312
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CARs blanks feasibility study results for advanced EB reticle fabrication: III [4409-06]Hashimoto, M. / Ohta, F. / Yokoya, Y. / Kobayashi, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 312
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CARs blanks feasibility study results for advanced EB reticle fabrication: IIIHashimoto, Masahiro / Ohta, Fumiko / Yokoya, Yasunori / Kobayashi, Hideo et al. | 2001
- 324
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Application of chemically amplified resist to 10-keV e-beam system [4409-28]Ahn, S. / Kim, C. / Yang, S.-H. / Moon, S.-Y. / Choi, S.-W. / Han, W.-S. / Sohn, J.-M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 324
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Application of chemically amplified resist to 10-keV e-beam systemAhn, Sung-Hee / Kim, Chang-Hwan / Yang, Seung-Hune / Moon, Seong-Yong / Choi, Seong-Woon / Han, Woo-Sung / Sohn, Jung-Min et al. | 2001
- 331
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Advantages of using the CAR for photomask manufacturing [4409-29]Kondoh, T. / Itoh, M. / Taniguchi, R. / Ohtsubo, K. / Sakai, M. / Watanabe, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 331
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Advantages of using the CAR for photomask manufacturingKondoh, Takehiro / Itoh, Masamitsu / Taniguchi, Rikiya / Ohtsubo, Kyoh / Sakai, Mari / Watanabe, Hidehiro et al. | 2001
- 341
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Acid-breakable-resin-based chemical amplification positive resist for 0.1-μm-rule reticle fabrication: design and lithographic performanceMigitaka, Sonoko / Arai, Tadashi / Sakamizu, Toshio / Kasuya, Kei / Hashimoto, Michiaki / Shiraishi, Hiroshi et al. | 2001
- 341
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Acid-breakable-resin-based chemical amplification positive resist for 0.1-mum-rule reticle fabrication: design and lithographic performance [4409-30]Migitaka, S. / Arai, T. / Sakamizu, T. / Kasuya, K. / Hashimoto, M. / Shiraishi, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 351
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Elongation effect of a protecting layer for film life of chemically amplified-type e-beam resistOzawa, Kakuei / Abe, Nobunori et al. | 2001
- 351
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Elongation effect of a protecting layer for film life of chemically amplified-type e-beam resist [4409-31]Ozawa, K. / Abe, N. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 356
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Improved baking of photomasks by a dynamically zone-controlled process approach [4409-34]Dress, P. / Gairing, T. M. / Saule, W. / Dietze, U. U. / Szekeresch, J. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 356
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Improved baking of photomasks by a dynamically zone-controlled process approachDress, Peter / Gairing, Thomas M. / Saule, Werner / Dietze, Uwe U. / Szekeresch, Jakob et al. | 2001
- 364
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Mask blanks warpage at 130-nm nodeDeguchi, Nobuyoshi / Iwamoto, Kazunori / Tsukamoto, Izumi / Takai, Ryo / Hiura, Mitsuru et al. | 2001
- 364
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Mask blanks warpage at 130-nm node [4409-66]Deguchi, N. / Iwamoto, K. / Tsukamoto, I. / Takai, R. / Hiura, M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 372
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Fabry-Perot-type antireflective coating for deep-ultraviolet binary photomask applicationChen, Hsuen-Li / Hsu, Chien-Kui / Chen, Ben-Chang / Ko, Fu-Hsiang / Huang, Tiao-Yuan / Chu, Tien-Chi et al. | 2001
- 372
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Fabry-Perot-type antireflective coating for deep-ultraviolet binary photomask application [4409-27]Chen, H. L. / Hsu, C. K. / Chen, B. C. / Ko, F. H. / Huang, T. Y. / Chu, T. C. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 382
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Dry etching of Cr layer and its loading effect [4409-36]Kwon, H.-J. / Min, D.-S. / Jang, P.-J. / Chang, B.-S. / Choi, B.-Y. / Park, K.-H. / Jeong, S.-H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 382
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Dry etching of Cr layer and its loading effectKwon, Hyuk-Joo / Min, D. S. / Jang, Pil-Jin / Chang, Byung-Soo / Choi, Boo-Yeon / Park, Kyung H. / Jeong, Soo-Hong et al. | 2001
- 390
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Improvement of NLD mask dry etching systemFujisawa, Tatsuya / Yoshioka, Nobuyuki / Sasaki, Takaei / Yamashiro, Kazuhide et al. | 2001
- 390
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Improvement of NLD mask dry etching system [4409-37]Fujisawa, T. / Yoshioka, N. / Sasaki, T. / Yamashiro, K. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 396
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Effect of clear field ratio on critical dimension in the dry etching process [4409-38]Lee, C.-J. / Bang, H.-S. / Choi, J.-W. / Jung, H.-S. / Shin, C. / Kim, H.-S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 396
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Effect of clear field ratio on critical dimension in the dry etching processLee, Chul-Joong / Bang, Hyun-Suk / Choi, J. W. / Jung, H. S. / Shin, Cheol / Kim, Hong-Seok et al. | 2001
- 401
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Development and characterization of a new plasma etching process for mask manufacturing [4409-39]Erber, F. / Ruhl, G. G. / Ebi, C. / Dietrich, R. / Mathuni, J. / Nesladek, P. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 401
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Development and characterization of a new plasma etching process for mask manufacturingErber, Frank / Ruhl, Guenther G. / Ebi, C. / Dietrich, Ralf / Mathuni, Josef / Nesladek, Pavel et al. | 2001
- 409
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CF4/O2plasma simulation and comparison with quartz etch experimentWu, Han-Ming / He, Long / Farnsworth, Jeff N. / Liu, Gang et al. | 2001
- 409
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CF~4/O~2 plasma simulation and comparison with quartz etch experiment [4409-67]Wu, H.-M. / He, L. / Farnsworth, J. N. / Liu, G. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 418
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Development of refined cleaning technique focusing on an ecological viewpointTange, Koji / Nagamura, Yoshikazu / Hosono, Kunihiro / Oomasa, Yuki / Kido, Koichi / Hayashi, Atsushi / Kikuchi, Yasutaka / Imagawa, Ichiro / Matsuzawa, Yuichi / Usui, Hozumi et al. | 2001
- 418
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Development of refined cleaning technique focusing on an ecological viewpoint [4409-56]Tange, K. / Nagamura, Y. / Hosono, K. / Oomasa, Y. / Kido, K. / Hayashi, A. / Kikuchi, Y. / Imagawa, I. / Matsuzawa, Y. / Usui, H. et al. | 2001
- 430
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Reticle cleaning process for 130-nm lithography and beyondHanda, Hitoshi / Takahashi, Masumi / Shirai, Hisatsugu et al. | 2001
- 430
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Reticle cleaning process for 130-nm lithography and beyond [4409-75]Handa, H. / Takahashi, M. / Shirai, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 438
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Longevity of 193-nm/ArF excimer pellicleKozeki, Takashi / Shigematsu, Shigeto / Kondo, Masahiro / Nakagawa, Hiroaki et al. | 2001
- 438
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Longevity of 193-nm/ArF excimer pellicle [4409-76]Kozeki, T. / Shigematsu, S. / Kondo, M. / Nakagawa, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 447
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Manufacturing and inspection of assist-bar-type OPC maskTsuzuki, Masayoshi / Nozaki, Wataru / Akima, Shinji / Yoshida, Jun / Oi, Yuko / Yamada, Yoshiro / Matsuzawa, Yuichi et al. | 2001
- 447
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Manufacturing and inspection of assist-bar-type OPC mask [4409-80]Tsuzuki, M. / Nozaki, W. / Akima, S. / Yoshida, J. / Oi, Y. / Yamada, Y. / Matsuzawa, Y. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 459
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Mask process design optimization based on quality mapping using standard mask inspection equipmentKuo, Shen C. / Tan, TaiSheng / Rosenbusch, Anja / Eran, Yair / Lindman, Ofer / Gottlib, Gidon et al. | 2001
- 459
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Mask process design optimization based on quality mapping using standard mask inspection equipment [4409-55]Kuo, S. C. / Tan, T. / Rosenbusch, A. / Eran, Y. / Lindman, O. / Gottlib, G. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 467
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Enhanced dispositioning of reticle defects using the Virtual Stepper with automated defect severity scoringCai, Lynn / Phan, Khoi A. / Spence, Chris A. / Pang, Linyong / Chan, Kevin K. et al. | 2001
- 467
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Enhanced dispositioning of reticle defects using the Virtual Stepper with automated defect severity scoring [4409-07]Cai, L. / Phan, K. A. / Spence, C. A. / Pang, L. / Chan, K. K. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 479
-
Defect printability study with programmed defects on halftone reticlesDettmann, Wolfgang / Haffner, Henning / Heumann, Jan P. / Liebe, Roman / Ludwig, R. / Moses, R. et al. | 2001
- 479
-
Defect printability study with programmed defects on halftone reticles [4409-08]Dettmann, W. / Haffner, H. / Heumann, J. P. / Liebe, R. / Ludwig, R. / Moses, R. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 488
-
Defect dispositioning using mask printability on attenuated phase-shift production photomasksNovak, Justin W. / Eynon, Benjamin G. / Rosenbusch, Anja / Goldenshtein, Alex et al. | 2001
- 488
-
Defect dispositioning using mask printability on attenuated phase-shift production photomasks [4409-09]Novak, J. W. / Eynon, B. G. / Rosenbusch, A. / Goldenshtein, A. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 499
-
Mask defect disposition: flux-area measurement of edge, contact, and OPC defects correlates to wafer and enables effective decisions [4409-10]Fiekowsky, P. / Taylor, D. / Wang, D. / Yang, C. C. / Lin, S. C. / Tu, L. H. / Lin, K. R. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 499
-
Mask defect disposition: flux-area measurement of edge, contact, and OPC defects correlates to wafer and enables effective decisionsFiekowsky, Peter / Taylor, Darren / Wang, David / Yang, Chien-Chu / Lin, Shu-Chun / Tu, L. H. / Lin, K. R. et al. | 2001
- 507
-
Accuracy of transmittance measurement of inspection machine for semitransparent defect and its detectability [4409-41]Kim, J. B. / Hur, I. B. / Jeong, S. H. / Son, Y. S. / Lee, K. Y. / Lee, S. W. / Shin, C. / Kim, H. S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 507
-
Accuracy of transmittance measurement of inspection machine for semitransparent defect and its detectabilityKim, Jung-Bae / Hur, I. B. / Jeong, Seong-Ho / Son, Yong-Seok / Lee, Kyu-Yong / Lee, Sang W. / Shin, Cheol / Kim, Hong-Seok et al. | 2001
- 512
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Photomask quality control by Virtual Stepper system for subwavelength photomasksKarklin, Linard / Mazor, Stan et al. | 2001
- 512
-
Photomask quality control by Virtual Stepper system for subwavelength photomasks [4409-42]Karklin, L. / Mazor, S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 518
-
Simulation-based defect printability analysis for 0.13-μm technologyTinaztepe, Cihan / Kagami, Ichiro et al. | 2001
- 518
-
Simulation-based defect printability analysis for 0.13-mum technology [4409-43]Tinaztepe, C. / Kagami, I. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 520
-
Multibeam high-resolution UV wavelength reticle inspectionHung, Chih-Chien / Yoo, Chue-San / Lin, Chin-Hsiang / Volk, William W. / Wiley, James N. / Khanna, Steve / Biellak, Steve / Wang, D. et al. | 2001
- 520
-
Multibeam high-resolution UV wavelength reticle inspection [4186-19] (Best Paper Award BACUS 2000)Hung, C. C. / Yoo, C. S. / Lin, C. H. / Volk, W. W. / Wiley, J. N. / Khanna, S. / Biellak, S. / Wang, D. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 532
-
LM5000 as a strong mask analyzing toolShiba, Hisashi / Kimura, Masayoshi / Saito, Y. / Takayama, Naohisa / Matsumura, K. / Murakami, Shingo / Hatta, Keiichi et al. | 2001
- 532
-
LM5000 as a strong mask analyzing tool [4409-51]Shiba, H. / Kimura, M. / Saito, Y. / Takayama, N. / Matsumura, K. / Murakami, S. / Hatta, K. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 543
-
Phase defect inspection by differential interference [4409-71]Ogawa, K. / Kodama, J. / Machida, K. / Nakashima, K. / Watakabe, Y. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 543
-
Phase defect inspection by differential interferenceOgawa, Kiyoshi / Kodama, J. / Machida, K. / Nakashima, Katsuyoshi / Watakabe, Yaichiro et al. | 2001
- 555
-
Advanced FIB mask repair technology for ArF lithography: IIIHagiwara, Ryoji / Yasaka, Anto / Takaoka, Osamu / Kozakai, Tomokazu / Yabe, S. / Koyama, Yoshihiro / Muramatsu, Masashi / Doi, Toshio / Suzuki, Kenji / Okabe, Mamoru et al. | 2001
- 555
-
Advanced FIB mask repair technology for ArF lithography: III [4409-53]Hagiwara, R. / Yasaka, A. / Takaoka, O. / Kozakai, T. / Yabe, S. / Koyama, Y. / Muramatsu, M. / Doi, T. / Suzuki, K. / Okabe, M. et al. | 2001
- 563
-
Focused ion beam repair for quartz bump defect of alternating phase-shift masksKagami, Ichiro / Kakuta, Daichi / Komizo, Tooru / Kawahira, Hiroichi et al. | 2001
- 563
-
Focused ion beam repair for quartz bump defect of alternating phase-shift masks [4409-73]Kagami, I. / Kakuta, D. / Komizo, T. / Kawahira, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 574
-
Laser mask repair system LM700A [4409-72]Ueda, A. / Yoshino, Y. / Morishige, Y. / Watanabe, S. / Kyusho, Y. / Haneda, T. / Ohmiya, M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 574
-
Laser mask repair system LM700AUeda, Atsushi / Yoshino, Yoichi / Morishige, Yukio / Watanabe, Syuichi / Kyusho, Yukio / Haneda, Tsutoma / Ohmiya, Makoto et al. | 2001
- 583
-
Utilization of assisting features in contact-hole mask repair [4409-74]Chang, C.-Y. / Chang, C.-H. / Lin, C.-Y. / Hung, C.-C. / Lin, C.-H. / Lin, J. C. H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 583
-
Utilization of assisting features in contact-hole mask repairChang, Chia-Yang / Chang, Chung-Hsing / Lin, Chuan-Yuan / Hung, C. C. / Lin, Chin-Hsiang / Lin, John C. et al. | 2001
- 592
-
Contact holes: optical area measurement predicts printability and is highly repeatable [4409-11]Scheid, G. W. / Taylor, D. / Fiekowsky, P. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 592
-
Contact holes: optical area measurement predicts printability and is highly repeatableScheid, Glen W. / Taylor, Darren / Fiekowsky, Peter et al. | 2001
- 598
-
First performance data obtained on next-generation optical mask metrology tools [4409-12]Roeth, K.-D. / Blaesing, C. / Alt, H. / Schlueter, G. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 598
-
First performance data obtained on next-generation optical mask metrology toolsRoeth, Klaus-Dieter / Blaesing-Bangert, Carola / Alt, Herger / Schlueter, Gerhard W. et al. | 2001
- 604
-
CD measurement for next-generation maskYamane, Takeshi / Hirano, Takashi et al. | 2001
- 604
-
CD measurement for next-generation mask [4409-59]Yamane, T. / Hirano, T. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 612
-
New optical metrology for masks: range and accuracy rivals SEMCottle, Rand / Fiekowsky, Peter / Hung, C. C. / Lin, Sheng-che et al. | 2001
- 612
-
New optical metrology for masks: range and accuracy rivals SEM [4409-60]Cottle, R. / Fiekowsky, P. / Hung, C. C. / Lin, S. C. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 618
-
Atomic force metrology and 3D modeling of microtrenching in etched photomask features [4409-91]Todd, B. / Miller, K. / Pistor, T. V. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 618
-
Atomic force metrology and 3D modeling of microtrenching in etched photomask featuresTodd, Bradley / Miller, Kirk / Pistor, Thomas V. et al. | 2001
- 632
-
157-nm photomask handling and infrastructure: requirements and feasibility [4409-83]Cullins, J. / Muzio, E. G. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 632
-
157-nm photomask handling and infrastructure: requirements and feasibilityCullins, Jerry / Muzio, Edward G. et al. | 2001
- 641
-
Up-to-date activities of PXL (proximity x-ray lithography) [4409-62]Matsui, Y. / Taguchi, T. / Nakayama, Y. / Kikuchi, Y. / Tsuboi, S. / Sumitani, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 641
-
Up-to-date activities of PXL (proximity x-ray lithography)Matsui, Yasuji / Taguchi, Takao / Nakayama, Yoshinori / Kikuchi, Yukiko / Tsuboi, Shinji / Sumitani, Hiroaki et al. | 2001
- 650
-
Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3 [4409-44]Nakayama, Y. / Watanabe, H. / Tsuboi, S. / Aoyama, H. / Fzaki, M. / Matsui, Y. / Morosawa, T. / Oda, M. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 650
-
Precise x-ray mask writing technology using advanced 100-kV EB writer EB-X3Nakayama, Yoshinori / Watanabe, Hiroshi / Tsuboi, Shinji / Aoyama, Hajime / Ezaki, Mizunori / Matsui, Yasuji / Morosawa, Tetsuo / Oda, Masatoshi et al. | 2001
- 660
-
Fabrication of NIST-format x-ray masks with 4-Gb DRAM patterns [4409-45]Tanaka, Y. / Fujii, K. / Suzuki, K. / Iwamoto, T. / Tsuboi, S. / Matsui, Y. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 660
-
Fabrication of NIST-format x-ray masks with 4-Gb DRAM patternsTanaka, Yuusuke / Fujii, Kiyoshi / Suzuki, Kenichiro / Iwamoto, Toshiyuki / Tsuboi, Shinji / Matsui, Yasuji et al. | 2001
- 669
-
EUVL masks: paving the path for commercializationMangat, Pawitter J. S. / Hector, Scott D. et al. | 2001
- 669
-
EUVL masks: paving the path for commercialization [4409-63]Mangat, P. J. S. / Hector, S. D. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 681
-
Performance of Cr mask for extreme-ultraviolet lithographyNii, Hajime / Kinoshita, Hiroo / Watanabe, Takeo / Hamamoto, K. / Tsubakino, H. / Sugie, Y. et al. | 2001
- 681
-
Performance of Cr mask for extreme-ultraviolet lithography [4409-47]Nii, H. / Kinoshita, H. / Watanabe, T. / Hamamoto, K. / Tsubakino, H. / Sugie, Y. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 687
-
EUV mask cleaning by dry and wet processesNii, Hajime / Kinoshita, Hiroo / Watanabe, Takeo / Matsuo, Y. / Sugie, Y. et al. | 2001
- 687
-
EUV mask cleaning by dry and wet processes [4409-48]Nii, H. / Kinoshita, H. / Watanabe, T. / Matsuo, Y. / Sugie, Y. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 695
-
Thermal response of EUVL mask substrate during dry etching processChiba, Akira / Hoshino, Eiichi / Takahashi, Makoto / Yamanashi, Hiromasa / Hoko, Hiromasa / Lee, Byoung T. / Yoneda, Takashi / Ito, Masaaki / Ogawa, Taro / Okazaki, Shinji et al. | 2001
- 695
-
Thermal response of EUVL mask substrate during dry etching process [4409-49]Chiba, A. / Hoshino, E. / Takahashi, M. / Yamanashi, H. / Hoko, H. / Lee, B. T. / Yoneda, T. / Ito, M. / Ogawa, T. / Okazaki, S. et al. | 2001
- 703
-
Simulation of EUVL mask defect printabilityRyoo, Manhyoung / Ito, Masaaki / Lee, Byoung T. / Ogawa, Taro / Okazaki, Shinji et al. | 2001
- 703
-
Simulation of EUVL mask defect printability [4409-50]Ryoo, M. / Ito, M. / Lee, B. T. / Ogawa, T. / Okazaki, S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 710
-
Optical inspection of EUV and SCALPEL reticles [4409-65]Pettibone, D. W. / Stokowski, S. E. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 710
-
Optical inspection of EUV and SCALPEL reticlesPettibone, Donald W. / Stokowski, Stanley E. et al. | 2001
- 718
-
Evaluation of aperture mask degradation in electron-beam lithography using line edge roughness of resist patternsYoshizawa, Masaki / Moriya, Shigeru et al. | 2001
- 718
-
Evaluation of aperture mask degradation in electron-beam lithography using line edge roughness of resist patterns [4409-46]Yoshizawa, M. / Moriya, S. / Society of Photo-Optical Instrumentation Engineers et al. | 2001
- 726
-
Stencil masks for electron-beam projection lithographyKurihara, Kenji / Iriguchi, H. / Motoyoshi, A. / Tabata, T. / Takahashi, S. / Iwamoto, K. / Okada, Ikuo / Yoshihara, Hideo / Noguchi, Hitoshi et al. | 2001
- 726
-
Stencil masks for electron-beam projection lithography [4409-64]Kurihara, K. / Iriguchi, H. / Motoyoshi, A. / Tabata, T. / Takahashi, S. / Iwamoto, K. / Okada, I. / Yoshihara, H. / Noguchi, H. / Society of Photo-Optical Instrumentation Engineers et al. | 2001