Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity (English)
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In:
Low Dielectric Constant Materials for IC Applications
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167-202
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2003
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ISSN:
- Article/Chapter (Book) / Electronic Resource
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Title:Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of Porosity
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Contributors:Volksen, W. ( author ) / Hawker, C. J. ( author ) / Hedrick, J. L. ( author ) / Lee, V. ( author ) / Magbitang, T. ( author ) / Toney, M. ( author ) / Miller, R. D. ( author ) / Huang, E. ( author ) / Liu, J. ( author ) / Lynn, K. G. ( author )
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Published in:Springer Series in Advanced Microelectronics ; 9 ; 167-202
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Publisher:
- New search for: Springer Berlin Heidelberg
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Place of publication:Berlin, Heidelberg
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Publication date:2003-01-01
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Size:36 pages
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ISBN:
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ISSN:
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DOI:
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Type of media:Article/Chapter (Book)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents eBook
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Overview on Low Dielectric Constant Materials for IC ApplicationsHo, P. S. / Leu, J. / Lee, W. W. et al. | 2003
- 23
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Materials Issues and Characterization of Low-k Dielectric MaterialsRyan, E. T. / McKerrow, A. J. / Leu, J. / Ho, P. S. et al. | 2003
- 75
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Structure and Property Characterization of Low-k Dielectric Porous Thin Films Determined by X-Ray Reflectivity and Small-Angle Neutron ScatteringLin, E. K. / Lee, H. / Bauer, B. J. / Wang, H. / Wetzel, J. T. / Wu, W. et al. | 2003
- 95
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Vapor Deposition of Low-k Polymeric DielectricsGill, W. N. / Rogojevic, S. / Lu, T. et al. | 2003
- 121
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Plasma-Enhanced Chemical Vapor Deposition of FSG and a-C:F Low-k MaterialsEndo, K. / Kishimoto, K. / Matsubara, Y. / Koyanagi, K. et al. | 2003
- 167
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Porous Organosilicates for On-Chip Applications: Dielectric Generational Extendibility by the Introduction of PorosityVolksen, W. / Hawker, C. J. / Hedrick, J. L. / Lee, V. / Magbitang, T. / Toney, M. / Miller, R. D. / Huang, E. / Liu, J. / Lynn, K. G. et al. | 2003
- 203
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Metal/Polymer Interfacial InteractionsMartini, D. M. / Kelber, J. A. et al. | 2003
- 221
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Diffusion Of Metals In Polymers And During Metal/Polymer Interface FormationFaupel, F. / Thran, A. / Kiene, M. / Strunskus, T. / Zaporojtchenko, V. / Behnke, K. et al. | 2003
- 253
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Plasma Etching of Low Dielectric Constant MaterialsOehrlein, G. S. / Standaert, T. E. F. M. / Matsuo, P. J. et al. | 2003
- 277
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Integration of SiLK Semiconductor DielectricWaeterloos, Joost J. et al. | 2003