Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM (English)
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- New search for: Ye, Zhizhen
- New search for: Liu, Yaping
- New search for: Zhou, Zhen-Hong
- New search for: Reif, Rafael
- New search for: Ye, Zhizhen
- New search for: Liu, Yaping
- New search for: Zhou, Zhen-Hong
- New search for: Reif, Rafael
In:
Journal of Electronic Materials
;
22
, 2
;
247-253
;
1993
- Article (Journal) / Electronic Resource
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Title:Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEM
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Contributors:Ye, Zhizhen ( author ) / Liu, Yaping ( author ) / Zhou, Zhen-Hong ( author ) / Reif, Rafael ( author )
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Published in:Journal of Electronic Materials ; 22, 2 ; 247-253
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Publisher:
- New search for: Springer-Verlag
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Place of publication:New York
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Publication date:1993-02-01
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 22, Issue 2
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 155
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Interface strain in organometallic vapor phase epitaxy grown InGaAs/InP superlatticesClawson, A. R. / Jiang, X. / Yu, P. K. L. / Hanson, C. M. / Vu, T. T. et al. | 1993
- 161
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Novel carrier confinement (P-N-P junctions) on (111)A GaAs substrates patterned with equilateral trianglesKobayashi, K. / Takebe, T. / Yamamoto, T. / Fujii, M. / Inai, M. / Lovell, D. et al. | 1993
- 165
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Evidence of interaction between two DX centers in N-Type AlGaAs from RDLTS and temperature dependent pulse-width DLTS measurementsWang, C. W. / Wu, C. H. / Boone, J. L. / Balestra, C. L. et al. | 1993
- 171
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Single wafer processing in stagnation point flow CVD reactor: Prospects, constraints and reactor designGadgil, Prasad N. et al. | 1993
- 179
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Novel fully self-aligned MESFET using source and drain regrown nonalloyed contacts by ALEHashemi, M. M. / Najjar, F. E. / McDermott, B. / Hills, J. S. / Maynard, L. / Mishra, U. K. / Hauser, J. R. / Bedair, S. M. et al. | 1993
- 185
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Analysis of the reaction between 60Sn-40Pb solder with a Pd-Pt-Ag-Cu-Au alloyFrear, D. R. / Michael, J. R. / Hlava, P. F. et al. | 1993
- 195
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Majority and minority carrier traps in monocrystalline CulnSe2Li, A. L. / Shih, I. et al. | 1993
- 195
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Majority and Minority Carrier Traps in Monocrystalline CuInSe~2Li, A. L. / Shih, I. et al. | 1993
- 201
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Lattice mismatched InGaAs on silicon photodetectors grown by molecular beam epitaxyPapanicolaou, N. A. / Anderson, G. W. / Iliadis, A. A. / Christou, A. et al. | 1993
- 207
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Characterization of interface defects in oxygen-implanted silicon filmsMayo, Santos / Lowney, Jeremiah R. / Roitman, Peter et al. | 1993
- 215
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Preparation and characterization of thin films of MgO, Al2O3 and MgAl2O4 by atomic layer depositionHuang, Ron / Kitai, Adrian H. et al. | 1993
- 221
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Schottky barrier modification on InP using shallow implant layerTyagi, Ritu / Chow, T. P. et al. | 1993
- 229
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Anomalous anisotropy in the absorption coefficient of vacancy-ordered Ga2Se3Okamoto, Tamotsu / Konagai, Makoto / Kojima, Nobuaki / Yamada, Akira / Takahashi, Kiyoshi / Nakamura, Yoshio / Nittono, Osamu et al. | 1993
- 233
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Photoluminescence spectroscopy of localized excitons in Si1−xGexLenchyshyn, L. C. / Thewalt, M. L. W. / Sturm, J. C. / Schwartz, P. V. / Rowell, N. L. / Noël, J. -P. / Houghton, D. C. et al. | 1993
- 239
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The electron microscopy of post-growth induced defects of ZnSe/GaAs epilayersYu, J. E. / Jones, K. S. et al. | 1993
- 247
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Structural characterization of low temperature Epi-silicon grown on {100} and {111} Si substrates using ultrahigh resolution cross-sectional TEMYe, Zhizhen / Liu, Yaping / Zhou, Zhen-Hong / Reif, Rafael et al. | 1993
- 255
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Growth of InAs-AlSb quantum wells having both high mobilities and high concentrationsNguyen, C. / Brar, B. / Bolognesi, C. R. / Pekarik, J. J. / Kroemer, H. / English, J. H. et al. | 1993