Integrated heterostructure devices based on II–VI compound semiconductors (English)
National licence
- New search for: Ren, J.
- New search for: Lansari, Y.
- New search for: Yu, Z.
- New search for: Cook, J. W.
- New search for: Schetzina, J. F.
- New search for: Ren, J.
- New search for: Lansari, Y.
- New search for: Yu, Z.
- New search for: Cook, J. W.
- New search for: Schetzina, J. F.
In:
Journal of Electronic Materials
;
22
, 8
;
973-975
;
1993
- Article (Journal) / Electronic Resource
-
Title:Integrated heterostructure devices based on II–VI compound semiconductors
-
Contributors:Ren, J. ( author ) / Lansari, Y. ( author ) / Yu, Z. ( author ) / Cook, J. W. ( author ) / Schetzina, J. F. ( author )
-
Published in:Journal of Electronic Materials ; 22, 8 ; 973-975
-
Publisher:
- New search for: Springer-Verlag
-
Place of publication:New York
-
Publication date:1993-08-01
-
Size:3 pages
-
ISSN:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Electronic Resource
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 22, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 801
-
ForewordWaterman, James R. / Ruth, Ralph P. et al. | 1993
- 803
-
Growth kinetics and properties of heteroepitaxial (Cd,Zn)Te films prepared by metalorganic molecular beam epitaxyRajavel, D. / Zinck, J. J. et al. | 1993
- 809
-
Growth of HgSe and Hg1−xCdxSe thin films by molecular beam epitaxyLansari, Y. / Cook, J. W. / Schetzina, J. F. et al. | 1993
- 815
-
CdTe and HgTe surface growth kinetics for molecular and metalorganic molecular beam epitaxyBenz, R. G. / Wagner, B. K. / Conte, A. / Summers, C. J. et al. | 1993
- 821
-
Growth and characterization of hot-wall epitaxial CdTe on (111) HgCdTe and CdZnTe substratesTregilgas, J. H. / Wan, C. F. / Liu, H. Y. et al. | 1993
- 827
-
Substrate issues for the growth of mercury cadmium tellurideTriboulet, R. / Tromson-Carli, A. / Lorans, D. / Nguyen Duy, T. et al. | 1993
- 835
-
MOCVD grown CdZn Te/GaAs/Si substrates for large-area HgCdTe IRFPAsJohnson, S. M. / Vigil, J. A. / James, J. B. / Cockrum, C. A. / Konkel, W. H. / Kalisher, M. H. / Risser, R. F. / Tung, T. / Hamilton, W. J. / Ahlgren, W. L. et al. | 1993
- 843
-
Comparison of In1−xTlx Sb and Hg1−x Cdx Te as long wavelength infrared materialsChen, A. B. / Schilfgaarde, M. / Sher, A. et al. | 1993
- 847
-
Comparison of spatial compositional uniformity and dislocation density for organometallic vapor phase epitaxial Hg1−x CdxTe grown by the direct alloy and interdiffused growth processesEdwall, D. D. et al. | 1993
- 853
-
Indium doping of HgCdTe grown by metalorganic chemical vapor deposition-direct alloy growth using triisopropylindium and diisopropyltellurium triisopropylindium adductKorenstein, R. / Hallock, P. H. / Lee, D. L. / Sullivan, E. / Gedridge, R. W. / Higa, K. T. et al. | 1993
- 859
-
A new N-type doping precursor for MOCVD-IMP growth of detector quality MCTIrvine, S. J. C. / Bajaj, J. / Bubulac, L. O. / Lin, W. P. / Gedridge, R. W. / Higa, K. T. et al. | 1993
- 865
-
Effects of growth rate and mercury partial pressure on twin formation in HgCdTe (111) layers grown by metalorganic chemical vapor depositionShigenaka, K. / Sugiura, L. / Nakata, F. / Hirahara, K. et al. | 1993
- 873
-
Improved CdTe layers on GaAs and Si using atomic layer epitaxyWang, Wen-Sheng / Ehsani, Hassan / Bhat, Ishwara et al. | 1993
- 879
-
The effect of substrate tilt on MOCVD growth of {100}CdTe on {100}GaAsHamilton, W. J. / Vigil, J. A. / Konkel, W. H. / Harper, V. B. / Johnson, S. M. et al. | 1993
- 887
-
Use of ellipsometry to characterize the surface of HgCdTeRhiger, David R. et al. | 1993
- 899
-
Modeling of in situ monitored laser reflectance during MOCVD growth of HgCdTeBajaj, J. / Irvine, S. J. C. / Sankur, H. O. / Svoronos, Spyros A. et al. | 1993
- 907
-
Hall effect characterization of LPE HgCdTe P/n heterojunctionsTobin, S. P. / Pultz, G. N. / Krueger, E. E. / Kestigian, M. / Wong, K. K. / Norton, P. W. et al. | 1993
- 915
-
Assessment of electrical inhomogeneity of undoped and doped Hg1−xCdxTe MOVPE (IMP) layers by variable magnetic field hall profile measurementsYoung, M. L. / Giess, J. / Gough, J. S. et al. | 1993
- 923
-
Characterization of Hg1−xCdxTe heterostructures by thermoelectric measurementsBaars, J. / Brink, D. / Edwall, D. D. / Bubulac, L. O. et al. | 1993
- 931
-
Photo-induced excess low frequency noise in HgCdTe photodiodesWilliams, G. M. / Wames, R. E. / Bajaj, J. / Blazejewski, E. R. et al. | 1993
- 943
-
Synchrotron white beam x-ray topography analysis of MBE grown CdTe/CdTe (111)BFanning, T. / Lee, M. B. / Casagrande, L. G. / Marzio, D. / Dudley, M. et al. | 1993
- 951
-
Structure of CdTe(111)B grown by MBE on misoriented Si(001)Chen, Y. P. / Sivananthan, S. / Faurie, J. P. et al. | 1993
- 959
-
X-ray diffraction characterization of LPE HgCdTe heterojunction photodiode materialTobin, S. P. / Krueger, E. E. / Pultz, G. N. / Kestigian, M. / Wong, K. K. / Norton, P. W. et al. | 1993
- 967
-
Growth method, composition, and defect structure dependence of mercury diffusion in CdxHg1–xTeArcher, N. A. / Palfrey, H. D. / Willoughby, A. F. W. et al. | 1993
- 973
-
Integrated heterostructure devices based on II–VI compound semiconductorsRen, J. / Lansari, Y. / Yu, Z. / Cook, J. W. / Schetzina, J. F. et al. | 1993
- 977
-
UV photon assisted control of interface charge between CdTe substrates and metalorganic chemical vapor deposition CdTe epilayersNemirovsky, Y. / Ruzin, A. / Bezinger, A. et al. | 1993
- 985
-
Heavily accumulated surfaces of mercury cadmium telluride detectors: Theory and experimentLowney, J. R. / Seiler, D. G. / Thurber, W. R. / Yu, Z. / Song, X. N. / Littler, C. L. et al. | 1993
- 993
-
The role of the insulator in determining 1/f noise in Hg1-xCdxTe integrating MIS devicesMeléndez, José L. / Beck, Jeff et al. | 1993
- 999
-
Process modeling of point defect effects in Hg1-xCdxTeMeléndez, José L. / Helms, C. R. et al. | 1993
- 1005
-
Hg0.8Cd0.2Te native defects: Densities and dopant propertiesBerding, M. A. / Schilfgaarde, M. / Sher, A. et al. | 1993
- 1011
-
Observation of indium-vacancy and indium-hydrogen interactions in Hg1−xCdxTeHughes, WM. C. / Swanson, M. L. / Austin, J. C. et al. | 1993
- 1017
-
Electrical effects of dislocations and other crystallographic defects in Hg0.78Cd0.22Te n-on-p photodiodesList, R. S. et al. | 1993
- 1027
-
Large improvement in HgCdTe photovoltaic detector performances at LETIDestefanis, G. / Chamonal, J. P. et al. | 1993
- 1033
-
Influence of Hg pressure on diffusion coefficient of As in HgCdTeChandra, D. / Goodwin, M. W. / Chen, M. C. / Dodge, J. A. et al. | 1993
- 1039
-
Annealing effect on the P-type carrier concentration in low-temperature processed arsenic-doped HgCdTeShin, S. H. / Arias, J. M. / Zandian, M. / Pasko, J. G. / Bubulac, L. O. / Wames, R. E. et al. | 1993
- 1049
-
MBE HgCdTe heterostructure p-on-n planar infrared photodiodesArias, J. M. / Pasko, J. G. / Zandian, M. / Shin, S. H. / Williams, G. M. / Bubulac, L. O. / Wames, R. E. / Tennant, W. E. et al. | 1993
- 1055
-
Nanometer fabrication in mercury cadmium telluride by electron cyclotron resonance microwave plasma reactive ion etchingEddy, C. R. / Hoffman, C. A. / Meyer, J. R. / Dobisz, E. A. et al. | 1993
- 1061
-
Low threshold injection laser in HgCdTeBouchut, Ph. / Destefanis, G. / Million, A. / Colin, T. / Bablet, J. et al. | 1993
- 1067
-
Vapor phase equilibria in the Cd1−xZnxTe alloy systemVydyanath, H. R. / Ellsworth, J. A. / Fisher, R. F. / Kennedy, J. J. / Johnson, C. J. / Neugebauer, G. T. et al. | 1993
- 1073
-
Thermomigration of Te precipitates and improvement of (Cd,Zn)Te substrate characteristics for the fabrication of LWIR (Hg, Cd)Te photodiodesVydyanath, H. R. / Ellsworth, J. A. / Parkinson, J. B. / Kennedy, J. J. / Dean, B. / Johnson, C. J. / Neugebauer, G. T. / Sepich, J. / Liao, Pok-Kai et al. | 1993
- 1081
-
Evidence for 1/f noise in diffusion current due to insulator trapping and surface recombination velocity fluctuationsSchiebel, R. A. / Blanks, D. / Bartholomew, D. / Kinch, M. A. et al. | 1993
- 1087
-
Properties of InAs/(Ga, In)Sb strained layer superlattices grown on the {111} orientationsDura, J. A. / Zborowski, J. T. / Golding, T. D. / Donnelly, D. / Covington, W. et al. | 1993
- 1093
-
Auger lifetimes in ideal InGaSb/InAs superlatticesGrein, C. H. / Young, P. M. / Ehrenreich, H. / McGill, T. C. et al. | 1993
- 1097
-
In-situ ellipsometric measurements of the MBE growth of CdTe/HgTe and CdTe/ZnTe superlatticesFolkard, M. A. / Shen, G. / Kumar, V. / Steele, T. A. / Rees, D. / Varga, I. K. / Carr, D. / Fueloep, K. / Johnson, B. A. / Orders, P. J. et al. | 1993
- 1103
-
States confined in the barriers of type-III HgTe/CdTe superlatticesLuo, H. / Ram-Mohan, L. R. / Yang, G. L. / Xuan, Y. / Furdyna, J. K. et al. | 1993
- 1107
-
Band gap uniformity and layer stability of HgTe-CdTe superlattices grown by photon-assisted molecular beam epitaxyVanka, R. W. / Harris, K. A. / Mohnkern, L. M. / Reisinger, A. R. / Myers, T. H. / Otsuka, N. et al. | 1993
- 1113
-
Comparison of the surface morphology and microstructure of in situ and ex situ derived YBa2Cu3O7−x thin filmsWesterheim, A. C. / Mcintyre, P. C. / Basu, S. N. / Bhatt, D. / Yu-Jahnes, L. S. / Anderson, Alfredo C. / Cima, M. J. et al. | 1993
- 1121
-
Fast vapor growth of cadmium telluride single crystalsWiedemeier, Heribert / Wu, Guangheng et al. | 1993
- 1129
-
A physically based phenomenological model using boltzmann-matano analysis for boron diffusion from polycrystalline Si into single crystal SiSultan, Akif / Lobo, Melvyn / Bhattacharya, Surya / Banerjee, Sanjay / batra, Shubneesh / Manning, M. / Dennison, C. et al. | 1993