Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures (English)
- New search for: Tikhomirov, V. G.
- New search for: Maleev, N. A.
- New search for: Kuzmenkov, A. G.
- New search for: Solov’ev, Yu. V.
- New search for: Gladyshev, A. G.
- New search for: Kulagina, M. M.
- New search for: Zemlyakov, V. E.
- New search for: Dudinov, K. V.
- New search for: Yankevich, V. B.
- New search for: Bobyl, A. V.
- New search for: Ustinov, V. M.
- New search for: Tikhomirov, V. G.
- New search for: Maleev, N. A.
- New search for: Kuzmenkov, A. G.
- New search for: Solov’ev, Yu. V.
- New search for: Gladyshev, A. G.
- New search for: Kulagina, M. M.
- New search for: Zemlyakov, V. E.
- New search for: Dudinov, K. V.
- New search for: Yankevich, V. B.
- New search for: Bobyl, A. V.
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In:
Semiconductors
;
45
, 10
;
1352-1356
;
2011
- Article (Journal) / Electronic Resource
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Title:Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructures
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Contributors:Tikhomirov, V. G. ( author ) / Maleev, N. A. ( author ) / Kuzmenkov, A. G. ( author ) / Solov’ev, Yu. V. ( author ) / Gladyshev, A. G. ( author ) / Kulagina, M. M. ( author ) / Zemlyakov, V. E. ( author ) / Dudinov, K. V. ( author ) / Yankevich, V. B. ( author ) / Bobyl, A. V. ( author )
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Published in:Semiconductors ; 45, 10 ; 1352-1356
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Publisher:
- New search for: SP MAIK Nauka/Interperiodica
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Place of publication:Dordrecht
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Publication date:2011-10-01
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Size:5 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 45, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1247
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Optical spectra of six silicon phasesSobolev, V. V. / Sobolev, V. Val. / Shushkov, S. V. et al. | 2011
- 1251
-
Effect of pressure and temperature on electronic structure of GaN in the zinc-blende structureDegheidy, A. R. / Elkenany, E. B. et al. | 2011
- 1258
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Structure and magnetic properties of InSe single crystals intercalated by nickelStakhira, I. M. / Tovstyuk, N. K. / Fomenko, V. L. / Tsmots, V. M. / Shchupliak, A. N. et al. | 2011
- 1264
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Specific features of the anisotropy of low-temperature microwave magnetoresistivity of lightly doped p-Ge due to the presence of light and heavy holesVeinger, A. I. / Zabrodskii, A. G. / Tisnek, T. V. / Goloshchapov, S. I. et al. | 2011
- 1273
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Band gap of CdTe and Cd0.9Zn0.1Te crystalsKosyachenko, L. A. / Sklyarchuk, V. M. / Sklyarchuk, O. V. / Maslyanchuk, O. L. et al. | 2011
- 1281
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The effect of Sn impurity on the optical and structural properties of thin silicon filmsVoitovych, V. V. / Neimash, V. B. / Krasko, N. N. / Kolosiuk, A. G. / Povarchuk, V. Yu. / Rudenko, R. M. / Makara, V. A. / Petrunya, R. V. / Juhimchuk, V. O. / Strelchuk, V. V. et al. | 2011
- 1286
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Electrical characteristics of Au/n-GaAs structures with thin and thick SiO2 dielectric layerAltuntas, H. / Altindal, S. / Corekci, S. / Ozturk, M. K. / Ozcelik, S. et al. | 2011
- 1291
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Main features of photostimulated ion transport in heterojunctions based on mixed ion-electron (hole) conductors and the model of a thin-film ion acceleratorStetsun, A. I. / Dvorina, L. A. et al. | 2011
- 1297
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Nucleation of CdTe islands during synthesis from the vapor phase on a cooled substrateBelyaev, A. P. / Rubets, V. P. / Antipov, V. V. / Eremina, E. O. et al. | 2011
- 1301
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Magnetoluminescence of CdTe/MnTe/CdMgTe heterostructures with ultrathin MnTe layersAgekyan, V. F. / Holz, P. O. / Karczewski, G. / Katz, V. N. / Moskalenko, E. S. / Serov, A. Yu. / Filosofov, N. G. et al. | 2011
- 1306
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A DLTS study of 4H-SiC-based p-n junctions fabricated by boron implantationIvanov, P. A. / Potapov, A. S. / Samsonova, T. P. / Korol’kov, O. / Sleptsuk, N. et al. | 2011
- 1311
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Formation of light-emitting nanostructures in layers of stoichiometric SiO2 irradiated with swift heavy ionsKachurin, G. A. / Cherkova, S. G. / Skuratov, V. A. / Marin, D. V. / Kesler, V. G. / Volodin, V. A. et al. | 2011
- 1317
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Photoelectric properties of porous GaN/SiC heterostructuresMynbaeva, M. G. / Sitnikova, A. A. / Mynbaev, K. D. et al. | 2011
- 1321
-
Scattering and electron mobility in combination-doped HFET-structures AlGaAs/InGaAs/AlGaAs with high electron densityKhabibullin, R. A. / Vasil’evskii, I. S. / Galiev, G. B. / Klimov, E. A. / Ponomarev, D. S. / Lunin, R. A. / Kulbachinskii, V. A. et al. | 2011
- 1327
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Features of molecular-beam epitaxy and structural properties of AlInSb-based heterostructuresSemenov, A. N. / Meltser, B. Ya. / Solov’ev, V. A. / Komissarova, T. A. / Sitnikova, A. A. / Kirylenko, D. A. / Nadtochyi, A. M. / Popova, T. V. / Kop’ev, P. S. / Ivanov, S. V. et al. | 2011
- 1334
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Interfacial luminescence in an InAs/InAsSbP isotype type II heterojunction at room temperatureGrigoryev, M. M. / Ivanov, E. V. / Moiseev, K. D. et al. | 2011
- 1339
-
Photophysical and electrical properties of polyphenylquinolines containing carbazole or indolo[3,2-b]carbazole fragments as new optoelectronic materialsSvetlichnyi, V. M. / Aleksandrova, E. L. / Myagkova, L. A. / Matyushina, N. V. / Nekrasova, T. N. / Smyslov, R. Yu. / Tameev, A. R. / Stepanenko, S. N. / Vannikov, A. V. / Kudryavtsev, V. V. et al. | 2011
- 1346
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Tin impurity centers in glassy germanium chalcogenidesBordovsky, G. A. / Gladkikh, P. V. / Kozhokar, M. Yu. / Marchenko, A. V. / Seregin, P. P. / Terukov, E. I. et al. | 2011
- 1352
-
Study of the effect of the gate region parameters on static characteristics of microwave field-effect transistors based on pseudomorphic AlGaAs-InGaAs-GaAs heterostructuresTikhomirov, V. G. / Maleev, N. A. / Kuzmenkov, A. G. / Solov’ev, Yu. V. / Gladyshev, A. G. / Kulagina, M. M. / Zemlyakov, V. E. / Dudinov, K. V. / Yankevich, V. B. / Bobyl, A. V. et al. | 2011
- 1357
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Simulation of optical properties of silicon solar cells textured with penetrating V-shaped groovesUntila, G. G. / Palov, A. P. / Poroykov, A. Yu. / Rakhimova, T. V. / Mankelevich, Yu. A. / Kost, T. N. / Chebotareva, A. B. / Dvorkin, V. V. et al. | 2011
- 1364
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Diode lasers emitting at 1220 nm with a highly strained GaInAs quantum well and GaAsP compensating layers MOCVD-grown on a GaAs substrateVinokurov, D. A. / Kapitonov, V. A. / Nikolaev, D. N. / Pikhtin, N. A. / Stankevich, A. L. / Shamakhov, V. V. / Bondarev, A. D. / Vavilova, L. S. / Tarasov, I. S. et al. | 2011
- 1369
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On the problem of the radiation hardness of SiC nuclear radiation detectors at high working temperaturesIvanov, A. M. / Sadokhin, A. V. / Strokan, N. B. / Lebedev, A. A. et al. | 2011
- 1374
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I-V characteristics of high-voltage 4H-SiC diodes with a 1.1-eV Schottky barrierIvanov, P. A. / Grekhov, I. V. / Kon’kov, O. I. / Potapov, A. S. / Samsonova, T. P. / Semenov, T. V. et al. | 2011
- 1378
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Analysis of quenching conditions of Fabry-Perot mode lasing in semiconductor stripe-contact lasersSlipchenko, S. O. / Podoskin, A. A. / Vinokurov, D. A. / Stankevich, A. L. / Leshko, A. Y. / Pikhtin, N. A. / Zabrodskiy, V. V. / Tarasov, I. S. et al. | 2011