Effect of erbium fluoride doping on the photoluminescence of SiO x films (English)
- New search for: Vlasenko, N. A.
- New search for: Sopinskii, N. V.
- New search for: Gule, E. G.
- New search for: Strelchuk, V. V.
- New search for: Oleksenko, P. F.
- New search for: Veligura, L. I.
- New search for: Nikolenko, A. S.
- New search for: Mukhlyo, M. A.
- New search for: Vlasenko, N. A.
- New search for: Sopinskii, N. V.
- New search for: Gule, E. G.
- New search for: Strelchuk, V. V.
- New search for: Oleksenko, P. F.
- New search for: Veligura, L. I.
- New search for: Nikolenko, A. S.
- New search for: Mukhlyo, M. A.
In:
Semiconductors
;
46
, 3
;
323-329
;
2012
- Article (Journal) / Electronic Resource
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Title:Effect of erbium fluoride doping on the photoluminescence of SiO x films
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Contributors:Vlasenko, N. A. ( author ) / Sopinskii, N. V. ( author ) / Gule, E. G. ( author ) / Strelchuk, V. V. ( author ) / Oleksenko, P. F. ( author ) / Veligura, L. I. ( author ) / Nikolenko, A. S. ( author ) / Mukhlyo, M. A. ( author )
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Published in:Semiconductors ; 46, 3 ; 323-329
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Publisher:
- New search for: SP MAIK Nauka/Interperiodica
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Place of publication:Dordrecht
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Publication date:2012-03-01
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Size:7 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 46, Issue 3
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 275
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Infrared luminescence from silicon nanostructures heavily doped with boronBagraev, N. T. / Klyachkin, L. E. / Kuzmin, R. V. / Malyarenko, A. M. / Mashkov, V. A. et al. | 2012
- 289
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Concerning the energy levels of silver in Ge-Si alloysTahirov, V. I. / Agamaliev, Z. A. / Sadixova, S. R. / Guliev, A. F. / Gahramanov, N. F. et al. | 2012
- 293
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Specific features of the temperature dependence of the conduction electron concentration in the narrow-gap and zero-gap states of Cd x Hg1 − x TeAliev, S. A. / Zulfigarov, E. I. / Selim-zade, R. I. et al. | 2012
- 298
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Influence of samarium on the thermoelectric figure of merit of Sm x Pb1 − x Te alloysAliev, F. F. / Hasanov, H. A. et al. | 2012
- 302
-
Electroreflectance study of the effect of γ radiation on the optical properties of epitaxial GaN filmsBelyaev, A. E. / Klyui, N. I. / Konakova, R. V. / Lukyanov, A. N. / Danilchenko, B. A. / Sveshnikov, J. N. / Klyui, A. N. et al. | 2012
- 306
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Influence of technological defects on the optical and photoelectric properties of AgCd2 − x Mn x GaSe4 alloysTretyak, A. P. / Davydyuk, H. Ye. / Bozhko, V. V. / Bulatetska, L. V. / Parasyuk, O. V. et al. | 2012
- 312
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The effect of irradiation with electrons on the electrical parameters of Hg3In2Te6Grushka, O. G. / Maslyuk, V. T. / Chupyra, S. M. / Mysliuk, O. M. / Bilichuk, S. V. / Zabolotskiy, I. I. et al. | 2012
- 315
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Specific features of recombination in layered a-Si:H filmsKurova, I. A. / Ormont, N. N. et al. | 2012
- 319
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Current-voltage characteristics of MnGa2Se4 single crystalsTagiev, B. G. / Tagiev, O. V. / Asadullayeva, S. G. / Eyyubov, Q. Y. et al. | 2012
- 323
-
Effect of erbium fluoride doping on the photoluminescence of SiO x filmsVlasenko, N. A. / Sopinskii, N. V. / Gule, E. G. / Strelchuk, V. V. / Oleksenko, P. F. / Veligura, L. I. / Nikolenko, A. S. / Mukhlyo, M. A. et al. | 2012
- 330
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Temperature dependence of contact resistance for Au-Ti-Pd2Si-n +-Si ohmic contacts subjected to microwave irradiationBelyaev, A. E. / Boltovets, N. S. / Konakova, R. V. / Kudryk, Ya. Ya. / Sachenko, A. V. / Sheremet, V. N. / Vinogradov, A. O. et al. | 2012
- 334
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Temperature dependence of the contact resistance of ohmic contacts to III–V compounds with a high dislocation densitySachenko, A. V. / Belyaev, A. E. / Bobyl, A. V. / Boltovets, N. S. / Ivanov, V. N. / Kapitanchuk, L. M. / Konakova, R. V. / Kudryk, Ya. Ya. / Milenin, V. V. / Novitskii, S. V. et al. | 2012
- 342
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Surface morphology and electrical properties of Au/Ni/〈C〉/n-Ga2O3/p-GaSe〈KNO3〉 hybrid structures fabricated on the basis of a layered semiconductor with nanoscale ferroelectric inclusionsBakhtinov, A. P. / Vodopyanov, V. N. / Netyaga, V. V. / Kudrynskyi, Z. R. / Lytvyn, O. S. et al. | 2012
- 354
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Photoluminescence study of the structural evolution of amorphous and crystalline silicon nanoclusters during the thermal annealing of silicon suboxide films with different stoichiometryZhigunov, D. M. / Shvydun, N. V. / Emelyanov, A. V. / Timoshenko, V. Yu. / Kashkarov, P. K. / Seminogov, V. N. et al. | 2012
- 360
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Mapping of two-photon luminescence amplification in zinc-oxide microstructuresSemin, S. V. / Sherstyuk, N. E. / Mishina, E. D. / Gherman, C. / Kulyuk, L. / Rasing, Th. / Peng, L. -H. et al. | 2012
- 363
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A problem on a dimer adsorbed at single-sheet grapheneDavydov, S. Yu. et al. | 2012
- 369
-
AlGaInN-based light emitting diodes with a transparent p-contact based on thin ITO filmsSmirnova, I. P. / Markov, L. K. / Pavlyuchenko, A. S. / Kukushkin, M. V. et al. | 2012
- 374
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Effect of the concentration of uncompensated impurities on the properties of CdTe-based X- and γ-ray detectorsKosyachenko, L. A. / Sklyarchuk, V. M. / Melnychuk, S. V. / Maslyanchuk, O. L. / Grushko, E. V. / Sklyarchuk, O. V. et al. | 2012
- 382
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Evidence of surface states for AlGaN/GaN/SiC HEMTs passivated Si3N4 by CDLTSGassoumi, M. / Grimbert, B. / Gaquiere, C. / Maaref, H. et al. | 2012
- 386
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An analytical gate tunneling current model for MOSFETsKazerouni, Iman Abaspur / Hosseini, Seyed Ebrahim et al. | 2012
- 391
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Kinetics of the current response in TlBr detectors under a high dose rate of γ-ray irradiationGazizov, I. M. / Zaletin, V. M. / Kukushkin, V. M. / Kuznetsov, M. S. / Lisitsky, I. S. et al. | 2012
- 397
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Leakage currents in 4H-SiC JBS diodesIvanov, P. A. / Grekhov, I. V. / Potapov, A. S. / Kon’kov, O. I. / Il’inskaya, N. D. / Samsonova, T. P. / Korol’kov, O. / Sleptsuk, N. et al. | 2012
- 401
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Properties of tungsten oxide thin films formed by ion-plasma and laser deposition methods for MOSiC-based hydrogen sensorsFominski, V. Y. / Grigoriev, S. N. / Romanov, R. I. / Zuev, V. V. / Grigoriev, V. V. et al. | 2012
- 410
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Pulsed laser deposition of ITO thin films and their characteristicsZuev, D. A. / Lotin, A. A. / Novodvorsky, O. A. / Lebedev, F. V. / Khramova, O. D. / Petuhov, I. A. / Putilin, Ph. N. / Shatohin, A. N. / Rumyanzeva, M. N. / Gaskov, A. M. et al. | 2012