Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk (English)
- New search for: Vasilév, Yu. B.
- New search for: Verezub, N. A.
- New search for: Mezhennyi, M. V.
- New search for: Prosolovich, V. S.
- New search for: Prostomolotov, A. I.
- New search for: Reznik, V. Ya.
- New search for: Vasilév, Yu. B.
- New search for: Verezub, N. A.
- New search for: Mezhennyi, M. V.
- New search for: Prosolovich, V. S.
- New search for: Prostomolotov, A. I.
- New search for: Reznik, V. Ya.
In:
Russian Microelectronics
;
42
, 8
;
467-476
;
2013
- Article (Journal) / Electronic Resource
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Title:Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulk
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Contributors:Vasilév, Yu. B. ( author ) / Verezub, N. A. ( author ) / Mezhennyi, M. V. ( author ) / Prosolovich, V. S. ( author ) / Prostomolotov, A. I. ( author ) / Reznik, V. Ya. ( author )
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Published in:Russian Microelectronics ; 42, 8 ; 467-476
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Publisher:
- New search for: Springer US
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Place of publication:Boston
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Publication date:2013-11-14
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Size:10 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 42, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 439
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New organometallic precursors and processes for chemical vapor deposition in the technology of nanomaterialsKuznetsov, F. A. / Smirnova, T. P. / Fainer, N. I. / Morozova, N. B. / Igumenov, I. K. et al. | 2013
- 448
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Thermoelectric properties of the (Bi,Sb)2Te3-based material obtained by spark plasma sinteringDrabkin, I. A. / Karataev, V. V. / Osvenskii, V. B. / Parkhomenko, Yu. N. / Sorokin, A. I. / Bulat, L. P. / Pivovarov, G. I. / Bublik, V. T. / Tabachkova, N. Yu. et al. | 2013
- 453
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Isotopic effects in the infrared absorption spectra of electrically active impurities in silicon 28, 29, and 30 with high isotopic enrichmentKotereva, T. V. / Gusev, A. V. / Gavva, V. A. / Kozyrev, E. A. et al. | 2013
- 458
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Initiation of a polarized state in thin lithium niobate films synthesized on isolated silicon substratesKiselev, D. A. / Zhukov, R. N. / Bykov, A. S. / Malinkovich, M. D. / Parkhomenko, Yu. N. / Vygovskaya, E. A. et al. | 2013
- 463
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Promising materials of acoustoelectronicsRoshchupkin, D. V. / Irzhak, D. V. / Emelin, E. V. / Fakhrtdinov, R. R. / Buzanov, O. A. / Sakharov, S. A. et al. | 2013
- 467
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Features of defect formation under the thermal treatment of dislocation-free single-crystal large-diameter silicon wafers with the specified distribution of oxygen-containing gettering centers in the bulkVasilév, Yu. B. / Verezub, N. A. / Mezhennyi, M. V. / Prosolovich, V. S. / Prostomolotov, A. I. / Reznik, V. Ya. et al. | 2013
- 477
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New trends in the development of the technology for the production of ultraviolet light-emitting diodesKurin, S. Yu. / Antipov, A. A. / Barash, I. S. / Bublik, V. T. / Helava, H. / Mokhov, E. N. / Nagalyuka, S. S. / Roenkov, A. D. / Chemekova, T. Yu. / Scherbatchev, K. D. et al. | 2013
- 483
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Studying the uniformity of the surface resistance of Ti, Al, Ni, Cr, and Au metal films on siliconVanyukhin, K. D. / Kobeleva, S. P. / Kontsevoi, Yu. A. / Kurmachev, V. A. / Seidman, L. A. et al. | 2013
- 488
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Mechanisms of electroconductivity in silicon-carbon nanocomposites with nanosized tungsten inclusions within a temperature range of 20-200°CAnfimov, I. M. / Kobeleva, S. P. / Malinkovich, M. D. / Shchemerov, I. V. / Toporova, O. V. / Parkhomenko, Yu. N. et al. | 2013
- 492
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Studying the formation of nanoporous and nanotubular titanium layers by electrochemical impedance spectroscopyBalagurov, L. A. / Agafonova, M. A. / Petrova, E. A. / Yakovenko, A. G. et al. | 2013
- 498
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Novel metal carbon nanocomposites and carbon nanocrystalline material with promising properties for the development of electronicsKozhitov, L. V. / Kozlov, V. V. / Kostikova, A. V. / Popkova, A. V. et al. | 2013
- 508
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A nanodimensional silicon fabricated using HCl: HF: C2H5OH electrolyteParkhomenko, Yu. N. / Belogorokhov, A. I. / Bliev, A. P. / Sozanov, V. G. et al. | 2013
- 512
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Demonstration of the Bragg diffraction of light by a 2D-photon structureNaimi, E. K. et al. | 2013
- 517
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Study of heterostructures according to single-crystal X-ray diffractometryLyutsau, A. V. / Krymko, M. M. / Enisherlova, K. L. / Temper, E. M. / Razgulyaev, I. I. et al. | 2013
- 525
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Photoluminescence spectra of Cd x Hg1 − x Te quantum-well heterostructuresGorn, D. I. / Voitsekhovskii, A. V. / Izhnin, I. I. et al. | 2013
- 529
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A method for determining the state of the silicon-sapphire boundary in thin silicon-on-sapphire layersTikhov, S. V. / Pavlov, D. A. / Krivulin, N. O. et al. | 2013