Nonlinear optical response of planar and spherical CdSe nanocrystals (English)
- New search for: Selyukov, A. S.
- New search for: Isaev, A. A.
- New search for: Vitukhnovsky, A. G.
- New search for: Litvak, V. L.
- New search for: Katsaba, A. V.
- New search for: Korshunov, V. M.
- New search for: Vasiliev, R. B.
- New search for: Selyukov, A. S.
- New search for: Isaev, A. A.
- New search for: Vitukhnovsky, A. G.
- New search for: Litvak, V. L.
- New search for: Katsaba, A. V.
- New search for: Korshunov, V. M.
- New search for: Vasiliev, R. B.
In:
Semiconductors
;
50
, 7
;
947-950
;
2016
- Article (Journal) / Electronic Resource
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Title:Nonlinear optical response of planar and spherical CdSe nanocrystals
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Contributors:Selyukov, A. S. ( author ) / Isaev, A. A. ( author ) / Vitukhnovsky, A. G. ( author ) / Litvak, V. L. ( author ) / Katsaba, A. V. ( author ) / Korshunov, V. M. ( author ) / Vasiliev, R. B. ( author )
-
Published in:Semiconductors ; 50, 7 ; 947-950
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Publisher:
- New search for: Pleiades Publishing
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Place of publication:Moscow
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Publication date:2016-07-01
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Size:4 pages
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ISSN:
-
DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 50, Issue 7
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 849
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Solubility of oxygen in CdS single crystals and their physicochemical propertiesMorozova, N. K. / Kanakhin, A. A. / Shnitnikov, A. S. et al. | 2016
- 853
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Structural and optical properties of GaAs(100) with a thin surface layer doped with chromiumSeredin, P. V. / Fedyukin, A. V. / Arsentyev, I. N. / Vavilova, L. S. / Tarasov, I. S. / Prutskij, T. / Leiste, H. / Rinke, M. et al. | 2016
- 860
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Features of conductivity mechanisms in heavily doped compensated V1–x Ti x FeSb SemiconductorRomaka, V. A. / Rogl, P. / Romaka, V. V. / Kaczorowski, D. / Stadnyk, Yu. V. / Krayovskyy, V. Ya. / Horyn, A. M. et al. | 2016
- 869
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Effect of thallium doping on the mobility of electrons in Bi2Se3 and holes in Sb2Te3Kudryashov, A. A. / Kytin, V. G. / Lunin, R. A. / Kulbachinskii, V. A. / Banerjee, A. et al. | 2016
- 876
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Electron exchange between tin impurity U – centers in PbS z Se1–z alloysMarchenko, A. V. / Terukov, E. I. / Seregin, P. P. / Rasnjuk, A. N. / Kiselev, V. S. et al. | 2016
- 883
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Field dependence of the electron drift velocity along the hexagonal axis of 4H-SiCIvanov, P. A. / Potapov, A. S. / Samsonova, T. P. / Grekhov, I. V. et al. | 2016
- 888
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Effect of coulomb correlations on luminescence and absorption in compensated semiconductorsBogoslovskiy, N. A. / Petrov, P. V. / Ivánov, Yu. L. / Averkiev, N. S. / Tsendin, K. D. et al. | 2016
- 894
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Local emission spectroscopy of surface micrograins in AIIIBV semiconductorsZhukov, N. D. / Gluhovskoy, E. G. / Mosiyash, D. S. et al. | 2016
- 901
-
Indium nanowires at the silicon surfaceKozhukhov, A. S. / Sheglov, D. V. / Latyshev, A. V. et al. | 2016
- 904
-
Specific features of the cathodoluminescence spectra of AlInGaN QWs, caused by the influence of phase separation and internal electric fieldsKuznetsova, Ya. V. / Jmerik, V. N. / Nechaev, D. V. / Kuznetsov, A. M. / Zamoryanskaya, M. V. et al. | 2016
- 910
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Effect of multicomponent InAsSbP matrix surface on formation of InSb quantum dots at MOVPE growthRomanov, V. V. / Dement’ev, P. A. / Moiseev, K. D. et al. | 2016
- 915
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Terahertz emission from CdHgTe/HgTe quantum wells with an inverted band structureVasilyev, Yu. B. / Mikhailov, N. N. / Vasilyeva, G. Yu. / Ivánov, Yu. L. / Zakhar’in, A. O. / Andrianov, A. V. / Vorobiev, L. E. / Firsov, D. A. / Grigoriev, M. N. / Antonov, A. V. et al. | 2016
- 920
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Semi-insulating 4H-SiC layers formed by the implantation of high-energy (53 MeV) argon ions into n-type epitaxial filmsIvanov, P. A. / Kudoyarov, M. F. / Kozlovski, M. A. / Potapov, A. S. / Samsonova, T. P. et al. | 2016
- 924
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Study of deep levels in GaAs p–i–n structuresSobolev, M. M. / Soldatenkov, F. Yu. / Kozlov, V. A. et al. | 2016
- 929
-
Photovoltage and photocurrent in Pd–oxide–InP structures in a hydrogen mediumImenkov, A. N. / Grebenshchikova, E. A. / Shutaev, V. A. / Ospennikov, A. M. / Sherstnev, V. V. / Yakovlev, Yu. P. et al. | 2016
- 935
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Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealingKrivyakin, G. K. / Volodin, V. A. / Kochubei, S. A. / Kamaev, G. N. / Purkrt, A. / Remes, Z. / Fajgar, R. / Stuchliková, T. H. / Stuchlik, J. et al. | 2016
- 941
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Voltage oscillations in the case of the switching effect in thin layers of Ge–Sb–Te chalcogenides in the current modeFefelov, S. A. / Kazakova, L. P. / Arsova, D. / Kozyukhin, S. A. / Tsendin, K. D. / Prikhodko, O. Yu. et al. | 2016
- 947
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Nonlinear optical response of planar and spherical CdSe nanocrystalsSelyukov, A. S. / Isaev, A. A. / Vitukhnovsky, A. G. / Litvak, V. L. / Katsaba, A. V. / Korshunov, V. M. / Vasiliev, R. B. et al. | 2016
- 951
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Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000 Formula Not Shown ) in vacuumKotousova, I. S. / Lebedev, S. P. / Lebedev, A. A. et al. | 2016
- 951
-
Electron-diffraction study of graphene-film growth stages during the thermal destruction of 6H-SiC (000 $$\bar 1$$ ) in vacuumKotousova, I. S. / Lebedev, S. P. / Lebedev, A. A. et al. | 2016
- 957
-
Effect of the anode-emitter injection efficiency on the characteristics of hybrid SIT–MOS transistorsKyuregyan, A. S. / Gorbatyuk, A. V. / Ivanov, B. V. et al. | 2016
- 963
-
Electrochemical lithiation of silicon with varied crystallographic orientationAstrova, E. V. / Rumyantsev, A. M. / Li, G. V. / Nashchekin, A. V. / Kazantsev, D. Yu. / Ber, B. Ya. / Zhdanov, V. V. et al. | 2016
- 970
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On current spreading in solar cells: a two-parameter tube modelMintairov, M. A. / Evstropov, V. V. / Mintairov, S. A. / Timoshina, N. Kh. / Shvarts, M. Z. / Kalyuzhnyy, N. A. et al. | 2016
- 976
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Quantum dots grown in the InSb/GaSb system by liquid-phase epitaxyParkhomenko, Ya. A. / Dement’ev, P. A. / Moiseev, K. D. et al. | 2016
- 980
-
Chloride epitaxy of β-Ga2O3 layers grown on c-sapphire substratesNikolaev, V. I. / Pechnikov, A. I. / Stepanov, S. I. / Sharofidinov, Sh. Sh. / Golovatenko, A. A. / Nikitina, I. P. / Smirnov, A. N. / Bugrov, V. E. / Romanov, A. E. / Brunkov, P. N. et al. | 2016
- 984
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Technique for forming ITO films with a controlled refractive indexMarkov, L. K. / Smirnova, I. P. / Pavluchenko, A. S. / Kukushkin, M. V. / Zakheim, D. A. / Pavlov, S. I. et al. | 2016