Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactor (English)
- New search for: Grigor’ev, Yu. N.
- New search for: Gorobchuk, A. G.
- New search for: Grigor’ev, Yu. N.
- New search for: Gorobchuk, A. G.
In:
Russian Microelectronics
;
43
, 1
;
34-41
;
2014
- Article (Journal) / Electronic Resource
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Title:Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactor
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Contributors:Grigor’ev, Yu. N. ( author ) / Gorobchuk, A. G. ( author )
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Published in:Russian Microelectronics ; 43, 1 ; 34-41
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Publisher:
- New search for: Springer US
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Place of publication:Boston
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Publication date:2014-01-01
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Size:8 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Keywords:
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Source:
Table of contents – Volume 43, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Formation of the nickel-platinum alloy silicide Schottky barriersSolodukha, V. A. / Turtsevich, A. S. / Solov’ev, Ya. A. / Komarov, F. F. / Mil’chanin, O. V. / Kovaleva, T. B. / Gaponenko, S. V. et al. | 2014
- 9
-
Investigation of the GaAs surface after etching in the plasma of mixtures HCl/Ar, HCl/Cl2, and HCl/H2 by atomic-force microscopyDunaev, A. V. et al. | 2014
- 15
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A distribution of Ga+ ions in a silicon substrate for nano-dimensional maskingBobrinetskii, I. I. / Nevolin, V. K. / Tsarik, K. A. / Chudinov, A. A. et al. | 2014
- 21
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Assembly of 3D-wares with the use of wire leadoutsZenin, V. V. / Stoyanov, A. A. / Petrov, S. V. / Chistyakov, S. Yu. et al. | 2014
- 34
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Effect of HF discharge structure on etch nonuniformity in plasma-chemical reactorGrigor’ev, Yu. N. / Gorobchuk, A. G. et al. | 2014
- 42
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Formation and dielectric properties of nanolayers of tantalum and aluminum oxidesEzhovskii, Yu. K. et al. | 2014
- 49
-
Simulation of spatially-heterogeneous oxygen precipitation in silicon with allowance for internal mechanical stressesGoldshtein, R. V. / Makhviladze, T. M. / Sarychev, M. E. et al. | 2014
- 57
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A semianalytical model of a nanowire-based field-effect transistorKhomyakov, A. N. / V’yurkov, V. V. et al. | 2014
- 72
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A modifying algorithm of the topological VLSI layer by dummy filling features based on modeling the chemical-mechanical planarizationAmirkhanov, A. V. / Gladkykh, A. A. / Makarchuk, V. V. / Stolyarov, A. A. / Shakhnov, V. A. et al. | 2014
- 80
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Micro systems engineering and digital holographic flash memoryZhukov, V. A. et al. | 2014