Range distributions for 25-200 keV 14N ions (English)
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- New search for: Land, D. J.
- New search for: Simons, D. G.
- New search for: Brennan, J. G.
- New search for: Brown, M. D.
- New search for: Hirvonen, J. K.
- New search for: Biersack, J. P.
- New search for: Land, D. J.
- New search for: Simons, D. G.
- New search for: Brennan, J. G.
- New search for: Brown, M. D.
- New search for: Hirvonen, J. K.
- New search for: Biersack, J. P.
In:
Radiation Effects and Defects in Solids
;
48
, 1-4
;
105-108
;
1980
- Article (Journal) / Electronic Resource
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Title:Range distributions for 25-200 keV 14N ions
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Contributors:Land, D. J. ( author ) / Simons, D. G. ( author ) / Brennan, J. G. ( author ) / Brown, M. D. ( author ) / Hirvonen, J. K. ( author ) / Biersack, J. P. ( author )
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Published in:Radiation Effects and Defects in Solids ; 48, 1-4 ; 105-108
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Publisher:
- New search for: Taylor & Francis
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Publication date:1980-05-01
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Size:4 pages
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Electronic Resource
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Language:English
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Source:
Table of contents – Volume 48, Issue 1-4
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
-
Study of mixed crystals on the basis of GaAs produced by ion beam synthesisChelnokov, V. E. / Smirnova, N. S. / Suvorov, A. V. et al. | 1980
- 7
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Structure and optical properties of silicon implanted by high doses of 70 and 310 keV carbon ionsAkimchenko, I. P. / Kisseleva, K. V. / Krasnopevtsev, V. V. / Touryanski, A. G. / Vavilov, V. S. et al. | 1980
- 13
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The formation of defects in Si under the radiation enhanced diffusion conditionsKalinin, V. V. / Aseyev, A. L. / Gerasimenko, N. N. / Obodnikov, V. I. / Stenin, S. I. et al. | 1980
- 19
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Production of radiation defects in silicon at different temperaturesGlaser, E. / Gotz, G. / Wesch, W. / Frey, H. et al. | 1980
- 25
-
Hyperfine interactions of 57Fe in iron beam modified metalsSawicka, Barbara D. et al. | 1980
- 31
-
Radiation defects and optical properties of ion implanted silicon dioxideKatenkamp, U. / Karge, H. / Prager, R. et al. | 1980
- 35
-
The superconducting transition temperature of niobium carbide single crystals after implantation of light elementsGeerk, J. et al. | 1980
- 37
-
Microstructure of Fe implanted with TiFollstaedt, D. M. / Myers, S. M. et al. | 1980
- 41
-
Characterization of recovery stages in silver-implanted magnesium by subsequent electron irradiationVajda, P. / Maury, F. / Lucasson, A. / Lucasson, P. et al. | 1980
- 45
-
Sub-surface damage of metals after 5 keV argon-ion bombardmentHertel, B. / Kammholz, K. / Diehl, J. et al. | 1980
- 51
-
Ion implantation in superconductorsMeyer, O. et al. | 1980
- 63
-
Optical waveguides in LiNbO3 formed by ion implantationDestefanis, G. L. / Gailliard, J. P. / Townsend, P. D. et al. | 1980
- 69
-
Modification of the lunar surface by solar wind ion bombardmentJull, A. J. T. / Pillinger, C. T. et al. | 1980
- 75
-
Low temperature self-ion implantation into granular aluminium filmsZiemann, P. / Heim, G. / Buckel, W. et al. | 1980
- 81
-
Optical effects resulting from deep implants of silicon with nitrogen and phosphorusHubler, G. K. / Malmberg, P. R. / Carosella, C. A. / Smith, T. P. III / Spitzer, W. G. / Waddell, C. N. / Phillippi, C. N. et al. | 1980
- 87
-
Implant redistribution in high-dose ion implanted and annealed siliconChristodoulides, C. E. / Carter, G. / Williams, J. S. et al. | 1980
- 91
-
Dual species ion implantation in GaAsInada, Taroh / Kato, Shigeki / Ohkubo, Tatsuya / Hara, Tohru et al. | 1980
- 97
-
On the theory of recoil implantationWinterbon, K. B. et al. | 1980
- 101
-
Long range enhancement of boron diffusivity by phosphorus diffusionLecrosnier, D. / Pelous, G. / Richou, F. et al. | 1980
- 105
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Range distributions for 25-200 keV 14N ionsLand, D. J. / Simons, D. G. / Brennan, J. G. / Brown, M. D. / Hirvonen, J. K. / Biersack, J. P. et al. | 1980
- 109
-
High-current and high-dose phosphorus implantation in siliconTamura, M. / Yagi, K. / Sakudo, N. / Tokiguti, K. / Tokuyama, T. et al. | 1980
- 115
-
Laser annealing of silicon layers amorphized by molecular ionsMuller, J. C. / Grob, A. / Stuck, R. / Siffert, P. et al. | 1980
- 121
-
Laser annealing of ion implanted GaAsSealy, B. J. / Kular, S. S. / Stephens, K. G. / Sadana, D. / Booker, G. R. et al. | 1980
- 125
-
Minority carrier lifetime and backscattering measurements of ion-gettered siliconRyssel, H. / Kranz, H. / Bayerl, P. / Schmiedt, B. et al. | 1980
- 133
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Resistivity control of sputtered amorphous-silicon by ion-implantationMatsumura, Hideki / Kuzuta, Nobuyuki / Ishiwara, Hiroshi / Furukawa, Seijiro et al. | 1980
- 139
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Radiation damage and annealing in Sb implanted diamondBraunstein, G. / Talmi, A. / Kalish, R. / Bernstein, T. / Beserman, R. et al. | 1980
- 145
-
An implantation predeposition technique for the introduction of deep-level chemical impuritiesMyers, D. R. / Koyama, R. Y. / Phillips, W. E. et al. | 1980
- 151
-
Ion bombardment of ordered Zr3AlHowe, L. M. / Rainville, M. H. et al. | 1980
- 157
-
The influence of high implant concentration on solid phase epitaxial regrowth in (100) and (111) siliconWilliams, J. S. / Christodoulides, C. E. / Grant, W. A. et al. | 1980
- 161
-
Laser pulse annealing in semiconductorsFoti, G. et al. | 1980
- 167
-
Liquid and solid phase regrowth of Si by laser irradiation and thermally assisted flash annealingPoate, J. M. / Bean, J. C. / Brown, W. L. / Cohen, R. L. / Feldman, L. C. / Leamy, H. J. / Rodgers, J. W. / Rousseau, D. / Rozgonyi, G. A. / Shelnutt, J. A. et al. | 1980
- 175
-
Microfabrication techniques used in Japan for VLSI and other devicesNamba, S. et al. | 1980
- 187
-
Impurity redistribution during laser irradiation in ion implanted siliconCampisano, S. U. / Baeri, P. / Foti, G. / Ciavola, G. / Rimini, E. et al. | 1980
- 191
-
Crystallization of ion implanted silicon layers by the nanosecond laser pulsesRomanov, S. I. / Kachurin, G. A. / Smirnov, L. S. / Khaibullin, I. B. / Shtyrkov, E. I. / Bajazitov, R. M. et al. | 1980
- 195
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Annealing of ion-implanted Si using a scanned CW laser systemGat, A. / Gerzberg, L. / Gibbons, J. F. / Lietoila, A. / Johnson, N. M. / Magee, T. J. / Peng, J. / Deline, V. / Williams, P. / Evans, C. A. Jr et al. | 1980
- 203
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The effects of ion implantation on the thermal oxidation of GaAsButcher, D. N. / Sealy, B. J. et al. | 1980
- 207
-
Molecular units in ionic crystals via abstraction of matrix atoms by implanted metal ionsRossler, K. / Pross, L. et al. | 1980
- 213
-
Low energy light ion sputtering of metals and carbidesRoth, J. / Bohdansky, J. / Martinelli, A. P. et al. | 1980
- 221
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Implantation of 5keV deuterium in BeOBehrisch, R. / Blewer, R. S. / Borders, J. / Langley, R. / Roth, J. / Scherzer, B. M. U. / Schulz, R. et al. | 1980
- 225
-
Implantation effects in LiF bombarded with alkali ionsDavenas, J. / Perez, A. / Dupin, J. P. / Dupuy, C. H. S. et al. | 1980
- 231
-
Depth profiling of D implanted into Ti at different temperaturesRoth, J. / Eckstein, W. / Bohdansky, J. et al. | 1980
- 237
-
Chemical and electrochemical aspects of ion implantationWolf, G. K. et al. | 1980
- 247
-
Damage and lattice location studies in Hg implanted Hg1-xCdxTeBahir, G. / Bernstein, T. / Kalish, R. et al. | 1980