Computer modelling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulses (English)
- New search for: Lietoila, A.
- New search for: Gibbons, J.F.
- New search for: Lietoila, A.
- New search for: Gibbons, J.F.
In:
Journal of Applied Physics
;
53
, 4
;
3207-3213
;
1982
- Article (Journal) / Print
-
Title:Computer modelling of the temperature rise and carrier concentration induced in silicon by nanosecond laser pulses
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Additional title:Rechnersimulation des Temperaturanstiegs und der Ladungstraegerkonzentration in Silicium aufgrund von Nanosekundenlaserimpulsen
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Contributors:Lietoila, A. ( author ) / Gibbons, J.F. ( author )
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Published in:Journal of Applied Physics ; 53, 4 ; 3207-3213
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Publisher:
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Publication date:1982
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Size:7 Seiten, 39 Quellen
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:SILICIUM , DIGITALSIMULATION , TEMPERATURERHOEHUNG , LADUNGSTRAEGERDICHTE , NANOSEKUNDENBEREICH , LASERIMPULS , IMPULSDAUER , LASERSTRAHLERWAERMUNG , REFLEXIONSVERMOEGEN , SCHMELZEN , ELEKTRONENTEMPERATUR , AUGER-EFFEKT , WAERMELEITFAEHIGKEIT , TEMPERATURGANG , TRAEGERDIFFUSION , INFRAROTLASER , REKOMBINATION , REKOMBINATIONSKOEFFIZIENT
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Source: