Effect of thermal annealing on the Pd/Au contact to p-type Al0.15Ga0.85N (English)
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In:
Japanese Journal of Applied Physics, Part 1
;
41
, 2A
;
581-582
;
2002
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ISSN:
- Article (Journal) / Print
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Title:Effect of thermal annealing on the Pd/Au contact to p-type Al0.15Ga0.85N
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Contributors:
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Published in:Japanese Journal of Applied Physics, Part 1 ; 41, 2A ; 581-582
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Publisher:
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Publication date:2002
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Size:2 Seiten, 12 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:Aluminiumverbindung , Diffusion , Galliumverbindung , Gold , Drei-Fünf-Verbindung , Palladium , Schottky-Kontakt , Halbleiter-Metall-Grenzfläche , Gitterlücke , Halbleiter mit großer Energielücke , Akzeptor (Fremdatom) , Auger-Elektronenspektrometrie , Auger-Elektronenspektrum , 100-Nanometer-Bereich , 700-Grad-C-Bereich
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Source:
Table of contents – Volume 41, Issue 2A
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 458
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Voltage gain of Si single-electron transistor and analysis of performance of n-metal-oxide-semiconductor type inverter with resistive loadLiu, Kuang-Ting / Fujiwara, A. / Takahashi, Y. / Murase, K. / Horikoshi, Y. et al. | 2002
- 464
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Computer simulation of point-defect fields and microdefect patterns in Czochralski-grown Si crystalsPuzanov, N.I. / Eidenzon, A.M. / Puzanov, D.N. / Furukawa, J. / Harada, K. / Ono, N. / Shimanuki, Y. et al. | 2002
- 472
-
Influence of initial amorphous layer deposition temperature on lateral solid-phase epitaxy of siliconMoniwa, M. / Hasegawa, H. et al. | 2002
- 490
-
Degradation of Se-doped GaAs0.6P0.4 light-emitting diodesSato, T. / Imai, M. et al. | 2002
- 501
-
Low-resistivity phosphorus-doped polycrystalline silicon thin films formed by catalytic chemical vapor deposition and successive rapid thermal annealingMorimoto, R. / Izumi, A. / Masuda, A. / Matsumura, H. et al. | 2002
- 507
-
Preferred orientation control of Cu(In1-xGax)Se2 (x approximately=0.28) thin films and its influence on solar cell characteristicsChaisitsak, S. / Yamada, A. / Konagai, M. et al. | 2002
- 524
-
Optical characteristics of InAs/InGaAsP/InP self-assembled quantum dots emitting at 1.4-1.6 mu mLee, Uk-Hyun / Yim, Jeong-Soon / Lee, Donghan / Jeong, Weon-Guk / Hwang, Eui-Hyun / Rhee, Do-Young / Sim, Jae-Sik / Dapkus, P.D. / Lee, Byung-Taek et al. | 2002
- 528
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Control of N content of GaPN grown by molecular beam epitaxy and growth of GaPN lattice matched to Si(100) substrateFurukawa, Y. / Yonezo, H. / Ojima, K. / Samonji, K. / Fujimoto, Y. / Momose, K. / Aiki, K. et al. | 2002
- 541
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Temperature effect on AlN/SiO2 gate pH-ion-sensitive field-effect transistor devicesChiang, Jung-Lung / Chen, Ying-Chung / Chou, Jung-Chuan / Cheng, Chien-Chuan et al. | 2002
- 552
-
Fully quantum-mechanical calculation of hole direct tunneling current in ultrathin gate oxide p-channel metal-oxide-semiconductor devicesIwata, H. et al. | 2002
- 557
-
Effects of Si addition and heating Ar on the electromigration performance of Al-alloy interconnectsDok Won Lee / Lee, Byung-Zu / Jong Yeul Jeong / Hyun Park / Shim, Kyu-cheol / Kim, Jong-Seok / Park, Young-Bae / Woo, Sun-Woong / Lee, Jeong-Gun et al. | 2002
- 570
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Examination of surface elementary reaction model for chemical vapor deposition of Al using in situ infrared reflection absorption spectroscopy: theoretical optimization procedure (3)Sugiyama, M. / Ogawa, H. / Sato, Y. / Itoh, H. / Aoyama, J. / Horiike, Y. / Komiyama, H. / Shimogaki, Y. et al. | 2002
- 577
-
Silicon nanoneedles grown by a simple thermal treatment using metal-sulfur catalystsKohno, H. / Takeda, S. et al. | 2002
- 579
-
Structural comparison between Ge and GaAs films grown by molecular beam epitaxy on Si substrateYu, Guolin / Ebisu, H. / Rahman, M.M.U. / Soga, T. / Jimbo, T. / Umeno, M. et al. | 2002
- 581
-
Effect of thermal annealing on the Pd/Au contact to p-type Al0.15Ga0.85NJun, Byung-Hyuk / Hirayama, H. / Aoyagi, Y. et al. | 2002
- 583
-
Properties of (Hg0.9Re0.1)Ba2CaCu2Oy grain boundary junctions on SrTiO3 and (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 substrates with different misorientation anglesInoue, N. / Sugano, T. / Adachi, S. / Tanabe, K. et al. | 2002
- 590
-
Preparation of Sr2AlTaO6 insulating films on YBa2Cu3O7- delta by metalorganic chemical vapor deposition with purified Sr sourceTakahashi, Y. / Zama, H. / Ishimaru, Y. / Inoue, N. / Wu, Y. / Morishita, T. / Tanabe, K. et al. | 2002
- 596
-
A superconducting quantum interference device magnetometer with a room-temperature pickup coil for measuring impedance magnetocardiogramsKandori, A. / Suzuki, D. / Yokosawa, K. / Tsukamoto, A. / Miyashita, T. / Tsukada, K. / Takagi, K. et al. | 2002
- 600
-
Highly textured La-Ca-Mn-O thin films grown on SiO2/Si(100)Fang, Jau-Shiung / Tsai, Fang-Wen / Chin, Tsung-Shune et al. | 2002
- 631
-
Simulation of recrystallization in phase-change recording materialsNishi, Y. / Kando, H. / Terao, M. et al. | 2002
- 636
-
High-velocity carbon plume generated by Nd:YAG laser for thin carbon film depositionSuizu, K. / Nagayama, K. et al. | 2002
- 664
-
1.4 mu m GaInNAs/GaAs quantum well laser grown by chemical beam epitaxyIkenaga, Y. / Miyamoto, T. / Makino, S. / Kageyama, T. / Arai, M. / Koyama, F. / Iga, K. et al. | 2002
- 666
-
Strong ultraviolet and green emissions at room temperature from annealed ZnO thin filmsAgyeman, O. / Xu, Chao-Nan / Shi, Wensheng / Zheng, Xu-Guan / Suzuki, M. et al. | 2002
- 675
-
Photovoltaic effect in Schottky junction of poly(3-alkylthiophene)/Al with various alkyl chain lengths and regioregularitiesKaneto, K. / Takayama, K. / Takashima, W. / Endo, T. / Rikukawa, M. et al. | 2002
- 680
-
Wavelet analysis of the longitudinal Shubnikov-de Haas oscillation in antimonySatoh, N. / Sakakibara, S. et al. | 2002
- 702
-
Effect of Ga2O3 on microstructure and microwave dielectric properties of Ba(Zn13/Ta23/)O3 ceramicsYang, Jung-In / Sahn Nahm / Choi, Chang-Hack / Lee, Hwack-Joo / Kim, Jae-Cheon / Park, Hyun-Min et al. | 2002
- 712
-
Liquid phase sintering and microwave dielectric properties of Ba(Mg13/Ta23/)O3 ceramicsHuang, Cheng-Liang / Lin, Ruei-Jsung et al. | 2002
- 717
-
Dielectric properties of (1-x)NdGaO3-xCaTiO3 solid solution at microwave frequenciesKim, Min-Han / Sahn Nahm / Cho, Chang-Hak / Lee, Hwack-Joo / Park, Hyun-Min et al. | 2002
- 731
-
Thermoelectric performance of yttrium-substituted (ZnO)5In2O3 improved through ceramic texturingIsobe, S. / Tani, T. / Masuda, Y. / Seo, Won-Seon / Koumoto, K. et al. | 2002
- 741
-
Heat of evolution and non-Newtonian viscous flow of Pd40Ni40P20 glassy alloyNishiyama, N. / Kato, H. / Saida, J. / Inoue, A. / Chen, Ho-Sou et al. | 2002
- 749
-
Synthesis of Si-Ge alloy by rapid cooling in short-duration microgravityNagai, H. / Nakata, Y. / Minagawa, H. / Kamada, K. / Tsurue, T. / Sasamori, M. / Okutani, T. et al. | 2002
- 763
-
Thermal conductivity of AxBO2-type layered oxides Na0.77MnO2 and LiCoO2Takahata, K. / Terasaki, I. et al. | 2002
- 778
-
Film precursor formation in metalorganic chemical vapor deposition of barium strontium titanate films: a study by microdischarge optical emission spectroscopyMomose, S. / Nakamura, T. / Tachibana, K. et al. | 2002
- 791
-
Contact resistivity between an Al metal line and an indium tin oxide line of thin film transistor liquid crystal displaysLee, Ho-Nyeon / Park, Jae-Chel / Kim, Hyun-Jin / Lee, Won-Geon et al. | 2002
- 795
-
Crystallinity and surface morphology of chemical solution derived epitaxial Bi4Ti3O12 thin films on (100)LaAlO3Hwang, Kyu-Seog / Yun, Yeon-Hum / Kim, Yun-Ho / Ryu, Hyun-Wook / Kang, Bo-An et al. | 2002
- 805
-
Evaluation of SiO2 films and SiO2/Si interfaces by graded etchingMuraji, Y. / Yoshikawa, K. / Nakamura, M. / Nakagawa, Y. et al. | 2002
- 814
-
Al-doped ZnO films deposited by reactive magnetron sputtering in mid-frequency mode with dual cathodesKon, M. / Song, Pung-Keun / Shigesato, Y. / Frach, P. / Mizukami, A. / Suzuki, K. et al. | 2002
- 836
-
Droplet-free thin films prepared by pulsed laser deposition using a vane velocity filterYoshitake, T. / Shiraishi, G. / Nagayama, K. et al. | 2002
- 860
-
Plasma propagation speed and electron temperature in surface-discharged alternating-current plasma display panelsAhn, Jeong-Chull / Kim, Soon-Bae / Cho, Tae-Seung / Choi, Myung-Chul / Joh, Dai-Geun / Moon, Min-Wug / Seo, Yoon-Ho / Kang, Seung-Oun / Cho, Guang-Sup / Choi, Eun-Ha et al. | 2002
- 876
-
Fabrication of refractive index profiles in poly (methyl methacrylate) using ultraviolet rays irradiationKada, T. / Hiramatsu, T. / Ogino, K. / Chuang Xin Liang / Machida, H. / Kiso, K. / Miyata, S. et al. | 2002
- 885
-
Pulsed laser deposition of poly(tetrafluoroethylene), poly(methylmethacrylate), and polycarbonate utilizing anthracene-photosensitized ablationTsuboi, Y. / Adachi, H. / Yamamoto, E. / Itaya, A. et al. | 2002
- 891
-
Influence of humidity on the electrical conductivity of synthesized DNA film on nanogap electrodeOtsuka, Y. / Lee, Hea-yeon / Gu, Jian-Hua / Lee, Jeong-O / Yoo, Kyung-Hwa / Tanaka, H. / Tabata, H. / Kawai, T. et al. | 2002
- 922
-
C60 monomer as an inherently monodisperse standard nanoparticle in the 1 nm rangeTanaka, H. / Takeuchi, K. et al. | 2002
- 925
-
Corrosion in aluminum chemical mechanical planarization for sub-quarter-micron dynamic random access memory devicesKim, Jae-Jeong / Jun Yong Kim / Chae Ho Jeong / Park, Nae-Hak / Han, Sang-Bum / Park, Jin-Won / Lee, Won-Jun et al. | 2002