Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors (English)
- New search for: Koo, S.M.
- New search for: Lee, S.K.
- New search for: Zetterling, C.M.
- New search for: Östling, M.
- New search for: Forsberg, U.
- New search for: Janzen, E.
- New search for: Koo, S.M.
- New search for: Lee, S.K.
- New search for: Zetterling, C.M.
- New search for: Östling, M.
- New search for: Forsberg, U.
- New search for: Janzen, E.
In:
ICSCRM, Silicon Carbide and Related Materials, International Conference, 9
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1235-1238
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2002
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Influence of trenching effect on the characteristics of buried-gate SiC junction field-effect transistors
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Additional title:Der Einfluß der Grabenisolation auf die Eigenschaften von Sperrschicht-FETs aus SiC mit vergrabenem Gate
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Contributors:Koo, S.M. ( author ) / Lee, S.K. ( author ) / Zetterling, C.M. ( author ) / Östling, M. ( author ) / Forsberg, U. ( author ) / Janzen, E. ( author )
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Published in:Materials Science Forum ; 389-393 ; 1235-1238
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Publisher:
- New search for: Trans Tech Publications
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Place of publication:Zürich-Ütikon
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Publication date:2002
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Size:4 Seiten, 5 Bilder, 11 Quellen
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Silicon Carbide Technology in New EraMatsunami, H. et al. | 2002
- 9
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Characterisation and Defects in Silicon CarbideBergman, J. P. / Jakobsson, H. / Storasta, L. / Carlsson, F. H. C. / Magnusson, B. / Sridhara, S. / Pozina, G. / Lendenmann, H. / Janzen, E. et al. | 2002
- 15
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Opportunities and Technical Strategies for Silicon Carbide Device DevelopmentCooper, J. A. et al. | 2002
- 23
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High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial ProductionMuller, S. G. / Brady, M. F. / Brixius, W. H. / Fechko, G. / Glass, R. C. / Henshall, D. / Hobgood, H. M. / Jenny, J. R. / Leonard, R. / Malta, D. et al. | 2002
- 29
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Growth and Defect Reduction of Bulk SiC CrystalsOhtani, N. / Fujimoto, T. / Katsuno, M. / Aigo, T. / Yashiro, H. et al. | 2002
- 35
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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor TransportWang, S. / Sanchez, E. K. / Kopec, A. / Poplawski, S. / Ware, R. / Holmes, S. / Balkas, C. M. / Timmerman, A. G. et al. | 2002
- 39
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Lateral Enlargement of Silicon Carbide CrystalsJacobson, H. / Yakimova, R. / Raback, P. / Syvajarvi, M. / Birch, J. / Janzen, E. et al. | 2002
- 43
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Numerical Simulation of Heat and Mass Transfer in SiC Sublimation GrowthNishizawa, S. / Kato, T. / Kitou, Y. / Oyanagi, N. / Arai, K. et al. | 2002
- 47
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4H Polytype Grain Formation in PVT-Grown 6H-SiC IngotsFujimoto, T. / Katsuno, M. / Ohtani, N. / Aigo, T. / Yashiro, H. et al. | 2002
- 51
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The Development of 2in 6H-SiC Wafer with High Thermal-ConductivityMiyanagi, Y. / Nakayama, K. / Shiomi, H. / Nishino, S. et al. | 2002
- 55
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Evolution of Crystal Mosaicity during Physical Vapor Transport Growth of SiCKatsuno, M. / Ohtani, N. / Fujimoto, T. / Aigo, T. / Yashiro, H. et al. | 2002
- 59
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Reduction of Macrodefects in Bulk SiC Single CrystalsBalkas, C. M. / Maltsev, A. A. / Roth, M. D. / Heydemann, V. D. / Sharma, M. / Yushin, N. K. et al. | 2002
- 63
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Model for Macroscopic Slits in 6H- and 4H-SiC Single CrystalsWollweber, J. / Rost, H.-J. / Schulz, D. / Siche, D. et al. | 2002
- 67
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Macrodefect Generation in SiC Single Crystals Caused by Polytype ChangesRost, H.-J. / Doerschel, J. / Schulz, D. / Siche, D. / Wollweber, J. et al. | 2002
- 71
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The Nucleation of Polytype Inclusions during the Sublimation Growth of 6H and 4H Silicon CarbideSanchez, E. K. / Kopec, A. / Poplawski, S. / Ware, R. / Holmes, S. / Wang, S. / Timmerman, A. G. et al. | 2002
- 75
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Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely MethodHirose, F. / Kitou, Y. / Oyanagi, N. / Kato, T. / Nishizawa, S. / Arai, K. et al. | 2002
- 79
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Observation of Planar Defects in 2-inch SiC WaferTanaka, H. / Nishiguchi, T. / Sasaki, M. / Nishino, S. et al. | 2002
- 83
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Flux-Controlled Sublimation Growth by an Inner Guide-TubeKitou, Y. / Bahng, W. / Kato, T. / Nishizawa, S. / Arai, K. et al. | 2002
- 87
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Growth and Evaluation of High Quality SiC Crystal by Sublimation MethodOyanagi, N. / Yamaguchi, H. / Kato, T. / Nishizawa, S. / Arai, K. et al. | 2002
- 91
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`In Situ Synthesis' of Source Material from Elemental Si and C during SiC PVT Growth Process and Characterization Using Digital X-Ray ImagingWellmann, P. J. / Herro, Z. / Straubinger, T. L. / Winnacker, A. et al. | 2002
- 95
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Influence of the Crystal Thickness on the SiC PVT Growth RateCherednichenko, D. I. / Khlebnikov, Y. I. / Drachev, R. V. / Khlebnikov, I. I. / Sudarshan, T. S. et al. | 2002
- 99
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Micropipe Formation Model via Surface Step InteractionOhtani, N. / Katsuno, M. / Fujimoto, T. / Aigo, T. / Yashiro, H. et al. | 2002
- 103
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Self-Healing Phenomenon of Micropipes in Silicon CarbideOkamoto, A. / Seno, Y. / Sugiyama, N. / Hirose, F. / Hara, K. / Tani, T. / Nakamura, D. / Kamiya, N. / Onda, S. et al. | 2002
- 107
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A Method of Reducing Micropipes in Thin Films by Using Sublimation GrowthOyanagi, N. / Nishizawa, S. / Arai, K. et al. | 2002
- 111
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Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal GrowthKato, T. / Oyanagi, N. / Kitou, Y. / Nishizawa, S. / Arai, K. et al. | 2002
- 115
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The Effect of Nitrogen on Crystal Growth of SiC on (11&unknown;20) SubstratesNishiguchi, T. / Masuda, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 119
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Temperature Dependence of Sublimation Growth of 6H-SiC on (11&unknown;20) SubstratesNishiguchi, T. / Masuda, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 123
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The Development of 4H-SiC {03&unknown;38} WafersNakayama, K. / Miyanagi, Y. / Shiomi, H. / Nishino, S. / Kimoto, T. / Matsunami, H. et al. | 2002
- 127
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Incorporation of Boron and the Role of Nitrogen as a Compensation Source in SiC Bulk Crystal GrowthBickermann, M. / Weingartner, R. / Hofmann, D. / Straubinger, T. L. / Winnacker, A. et al. | 2002
- 131
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Aluminum Doping of 6H- and 4H-SiC with a Modified PVT Growth MethodStraubinger, T. L. / Bickermann, M. / Rasp, M. / Weingartner, R. / Wellmann, P. J. / Winnacker, A. et al. | 2002
- 135
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Resistivity Mapping of Semi-Insulating 6H-SiC WafersRoth, M. D. / Heydemann, V. D. / Mitchel, W. C. / Yushin, N. K. / Sharma, M. / Wang, S. / Balkas, C. M. et al. | 2002
- 139
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On the Preparation of Vanadium-Doped Semi-Insulating SiC Bulk CrystalsBickermann, M. / Hofmann, D. / Straubinger, T. L. / Weingartner, R. / Winnacker, A. et al. | 2002
- 143
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Solid-Phase Epitaxial Growth of Bulk SiC Single CrystalsPernot, E. / Anikin, M. / Pons, M. / Chaix-Pluchery, O. / Baillet, F. / Matko, I. / Madar, R. et al. | 2002
- 147
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Full Si Wafer Conversion into Bulk 3C-SiCLeycuras, A. / Tottereau, O. / Vicente, P. / Falkovsky, L. A. / Girard, P. / Camassel, J. et al. | 2002
- 151
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QuaSiC Smart-Cut® Substrates for SiC High Power DevicesLetertre, F. / Jalaguier, E. / Di Cioccio, L. / Templier, F. / Bluet, J. M. / Banc, C. / Matko, I. / Chenevier, B. / Bano, E. / Guillot, G. et al. | 2002
- 155
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CVD SiC Powder for High-Purity SiC Source MaterialEzaki, S. / Saito, M. / Ishino, K. et al. | 2002
- 159
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Direct Synthesis and Growth of SiC Single Crystal from Ultrafine Particle PrecursorYamada, Y. / Sagawa, K. et al. | 2002
- 165
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Recent Achievements and Future Challenges in SiC Homoepitaxial GrowthKimoto, T. / Nakazawa, S. / Fujihira, K. / Hirao, T. / Nakamura, S. / Chen, Y. / Hashimoto, K. / Matsunami, H. et al. | 2002
- 171
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Growth and Electrical Characterization of Lightly-Doped Thick 4H-SiC EpilayersTsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2002
- 175
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Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVDFujihira, K. / Kimoto, T. / Matsunami, H. et al. | 2002
- 179
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High-Rate Epitaxial Growth of 4H-SiC Using a Vertical-Type, Quasi-Hot-Wall CVD ReactorMasahara, K. / Takahashi, T. / Kushibe, M. / Ohno, T. / Nishio, J. / Kojima, K. / Ishida, Y. / Suzuki, T. / Tanaka, T. / Yoshida, S. et al. | 2002
- 183
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Fast Growth and Doping Characteristics of alpha-SiC in Horizontal Cold-Wall Chemical Vapor DepositionNakamura, S. / Kimoto, T. / Matsunami, H. et al. | 2002
- 187
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Highly Uniform Epitaxial SiC-Layers Grown in a Hot Wall CVD Reactor with Mechanical RotationSchoner, A. / Konstantinov, A. / Karlsson, S. / Berge, R. et al. | 2002
- 191
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Growth Characteristics of SiC in a Hot-Wall CVD Reactor with RotationZhang, J. / Forsberg, U. / Isacson, M. / Ellison, A. / Henry, A. / Kordina, O. / Janzen, E. et al. | 2002
- 195
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Epitaxial Growth of (11&unknown;20) 4H-SiC Using Substrate Grown in the [11&unknown;20] DirectionKojima, K. / Ohno, T. / Senzaki, J. / Fukuda, K. / Fujimoto, T. / Katsuno, M. / Ohtani, N. / Nishino, J. / Masahara, K. / Ishida, Y. et al. | 2002
- 199
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Hot-Wall CVD Growth of 4H-SiC Using Si~2Cl~6+C~3H~8+H~2 SystemMiyanagi, T. / Nishino, S. et al. | 2002
- 203
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Aluminum Doping of Epitaxial Silicon Carbide Grown by Hot-Wall CVD; Effect of Process ParametersForsberg, U. / Danielsson, O. / Henry, A. / Linnarsson, M. K. / Janzen, E. et al. | 2002
- 207
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Aluminium Incorporation into 4H-SiC Layers during Epitaxial Growth in a Hot-Wall CVD SystemWagner, G. / Leitenberger, W. / Irmscher, K. / Schmid, F. / Laube, M. / Pensl, G. et al. | 2002
- 211
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Vapor-Phase Epitaxial Growth of n-Type SiC Using Phosphine as the PrecursorWang, R. / Bhat, I. / Chow, P. et al. | 2002
- 215
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Investigation of Residual Impurities in 4H-SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor DepositionNishio, J. / Kushibe, M. / Masahara, K. / Kojima, K. / Ohno, T. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Tanaka, T. / Yoshida, S. et al. | 2002
- 219
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Predicting Growth Rates of SiC Epitaxial Layers Grown by Hot-Wall Chemical Vapor DepositionDanielsson, O. / Jonsson, S. / Henry, A. / Janzen, E. et al. | 2002
- 223
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Simulation of the Large-Area Growth of Homoepitaxial 4H-SiC by Chemical Vapor DepositionPons, M. / Meziere, J. / Kuan, S. W. T. / Blanquet, E. / Ferret, P. / Di Cioccio, L. / Billon, T. / Madar, R. et al. | 2002
- 227
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Simulation of High-Temperature SiC Epitaxial Growth Using Vertical, Quasi-Hot-Wall CVD ReactorHasegawa, M. / Miyauchi, A. / Masahara, K. / Ishida, Y. / Takahashi, T. / Ohno, T. / Nishio, J. / Suzuki, T. / Tanaka, T. / Yoshida, S. et al. | 2002
- 231
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Bending of Basal-Plane Dislocations in VPE Grown 4H-SiC Epitaxial LayersHa, S. / Mieszkowski, P. / Rowland, L. B. / Skowronski, M. et al. | 2002
- 235
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The Effect of Epitaxial Growth on Warp of SiC WafersNakayama, K. / Miyanagi, Y. / Maruyama, K. / Okamoto, Y. / Shiomi, H. / Nishino, S. et al. | 2002
- 239
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In Situ Etching of 4H-SiC in H~2 with Addition of HCl for Epitaxial CVD GrowthZhang, J. / Kordina, O. / Ellison, A. / Janzen, E. et al. | 2002
- 243
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Surface Morphology of SiC Epitaxial Layers Grown by Vertical Hot-Wall Type CVDTakahashi, K. / Uchida, M. / Yokogawa, T. / Kusumoto, O. / Yamashita, K. / Miyanaga, R. / Kitabatake, M. et al. | 2002
- 247
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Delta-Doped Layers of SiC Grown by `Pulse Doping' TechniqueTakahashi, K. / Yokogawa, T. / Uchida, M. / Kusumoto, O. / Yamashita, K. / Miyanaga, R. / Kitabatake, M. et al. | 2002
- 251
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Homoepitaxial `Web Growth' of SiC to Terminate C-Axis Screw Dislocations and Enlarge Step-Free SurfacesNeudeck, P. G. / Powell, J. A. / Trunek, A. / Spry, D. / Beheim, G. M. / Benavage, E. / Abel, P. / Vetter, W. M. / Dudley, M. et al. | 2002
- 255
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Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11&unknown;20) SubstratesChen, Y. / Kimoto, T. / Takeuchi, Y. / Matsunami, H. et al. | 2002
- 259
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Characteristics of Boron in 4H-SiC Layers Produced by High-Temperature TechniquesKakanakova-Georgieva, A. / Yakimova, R. / Zhang, J. / Storasta, L. / Syvajarvi, M. / Janzen, E. et al. | 2002
- 263
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Epitaxial Growth of 4H-SiC with Hexamethyldisilane HMDSSartel, C. / Souliere, V. / Dazord, J. / Monteil, Y. / El-Harrouni, I. / Bluet, J. M. / Guillot, G. et al. | 2002
- 267
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Homoepitaxial Growth of 4H-SiC on Porous Substrate Using Bis-Trimethylsilylmethane PrecursorJeong, J. K. / Um, M. Y. / Na, H. J. / Kim, B. S. / Song, I. B. / Kim, H. J. et al. | 2002
- 271
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TEM (XHREM) and EDX Studies of 6H-SiC Porous Layer as a Substrate for Subsequent Homoepitaxial GrowthSorokin, L. M. / Hutchison, J. L. / Sloan, J. / Mosina, G. N. / Savkina, N. S. / Shuman, V. B. / Lebedev, A. A. et al. | 2002
- 275
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3C-SiC(100) Homoepitaxial Growth by Chemical Vapor Deposition and Schottky Barrier Junction CharacteristicsIshida, Y. / Kushibe, M. / Takahashi, T. / Okumura, H. / Yoshida, S. et al. | 2002
- 279
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Homoepitaxial Growth of Cubic Silicon Carbide by Sublimation EpitaxyFurusho, T. / Miyanagi, T. / Okui, Y. / Ohshima, S. / Nishino, S. et al. | 2002
- 283
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Impact of the Initial Surface Conditions on Defect Appearance in 4H-SiC EpilayersYakimova, R. / Jacobson, H. / Syvajarvi, M. / Kakanakova-Georgieva, A. / Iakimov, T. / Virojanadara, C. / Johansson, L. I. / Janzen, E. et al. | 2002
- 287
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Effect of the Si Droplet Size on the VLS Growth Mechanism of SiC Homoepitaxial LayersFerro, G. / Chaussende, D. / Cauwet, F. / Monteil, Y. et al. | 2002
- 291
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Liquid-Phase Epitaxial Growth of Heavily Doped Al p-Type Contact Layers for SiC Devices and Resulting Ohmic ContactsSyrkin, A. / Dmitriev, V. / Kovalenkov, O. / Bauman, D. / Crofton, J. et al. | 2002
- 295
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Traveling Self-Confined-Solvent Method: Novel LPE Growth of 6H-SiCAsaoka, Y. / Hiramoto, M. / Sano, N. / Kaneko, T. et al. | 2002
- 299
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Homoepitaxial Growth of 4H-SiC Thin Film Below 1000^oC by Microwave Plasma Chemical Vapor DepositionOkamoto, M. / Kosugi, R. / Tanaka, Y. / Takeuchi, D. / Nakashima, S. / Nishizawa, S. / Fukuda, K. / Okushi, H. / Arai, K. et al. | 2002
- 303
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In Situ Etching of SiC Wafers in a CVD System Using Oxygen as the SourceWang, R. / Bhat, I. / Chow, P. et al. | 2002
- 307
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SiO~2 as Oxygen Source for the Chemical Vapor Transport of SiCJacquier, C. / Ferro, G. / Cauwet, F. / Monteil, Y. et al. | 2002
- 311
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Growth of Defect-Free 3C-SiC on 4H- and 6H-SiC Mesas Using Step-Free Surface HeteroepitaxyNeudeck, P. G. / Powell, J. A. / Trunek, A. J. / Huang, X. R. / Dudley, M. et al. | 2002
- 315
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3C-SiC Growth on 6H-SiC (0001) SubstratesMatko, I. / Chenevier, B. / Audier, M. / Madar, R. / Diani, M. / Simon, L. / Kubler, L. / Aubel, D. et al. | 2002
- 319
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Heteroepitaxial Growth and Characteristics of 3C-SiC on Large-Diameter Si(001) SubstratesNagasawa, H. / Kawahara, T. / Yagi, K. et al. | 2002
- 323
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Comparative Study of Heteroepitaxially and Homoepitaxially Grown 3C-SiC FilmsTakahashi, T. / Ishida, Y. / Tsuchida, H. / Kamata, I. / Okumura, H. / Yoshida, S. / Arai, K. et al. | 2002
- 327
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Growth of 3C-SiC on Si(100) by LPCVD and Patterning of the Grown LayersBakin, A. / Behrens, I. / Ivanov, A. / Peiner, E. / Piester, D. / Wehmann, H.-H. / Schlachetzki, A. et al. | 2002
- 331
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Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si SubstrateOkui, Y. / Jacob, C. / Ohshima, S. / Nishino, S. et al. | 2002
- 335
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Evaluation of Carbonized Layers for 3C-SiC/Si Epitaxial Growth by EllipsometryShimizu, H. / Ohba, T. / Hisada, K. et al. | 2002
- 339
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In Situ Doping of 3C-SiC Grown on (0001) Sapphire Substrates by LPCVDSun, G. S. / Luo, M. C. / Wang, L. / Zhu, S. R. / Li, J. M. / Zeng, Y. P. / Lin, L. Y. et al. | 2002
- 343
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Improved SiCOI Structures Elaborated by Heteroepitaxy of 3C-SiC on SOIChassagne, T. / Ferro, G. / Wang, H. / Stoemenos, Y. / Peyre, H. / Contreras, S. / Camassel, J. / Monteil, Y. / Ghyselen, B. et al. | 2002
- 347
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Study of Metamorphosing Top Si Layer of SOI Wafer into 3C-SiC Using Conventional Electric FurnaceHirai, S. / Jobe, F. / Nakao, M. / Izumi, K. et al. | 2002
- 351
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Formation of Extremely Thin, Quasi-Single-Domain 3C-SiC Film on Resistively Heated On-Axis Si(001) Substrate Using Organo-Silane Buffer LayerNakazawa, H. / Suemitsu, M. et al. | 2002
- 355
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Electrical Characterization of SiC/Si Heterostructures with Modified InterfacesForster, C. / Masri, P. / Pezoldt, J. et al. | 2002
- 359
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Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized SiliconKrafcsik, O. H. / Vida, G. / Josepovits, K. V. / Deak, P. / Radnoczi, G. Z. / Pecz, B. / Barsony, I. et al. | 2002
- 363
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Reaction Mechanism of the Carbonization Process by Low-Energy Ion SubplantationTsubouchi, N. / Chayahara, A. / Mokuno, Y. / Kinomura, A. / Horino, Y. et al. | 2002
- 367
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Comparison of the Growth Characteristics of SiC on Si between Low-Pressure CVD and Triode Plasma CVDYasui, K. / Hashiba, M. / Narita, Y. / Akahane, T. et al. | 2002
- 371
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Fabrication of alpha-SiC Heteroepitaxial Films by YAG-PLAD MethodMuto, H. / Kusumori, T. et al. | 2002
- 375
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Low-Temperature Preparation of alpha-SiC Epitaxial Films by Nd: YAG Pulsed-Laser DepositionKusumori, T. / Muto, H. et al. | 2002
- 379
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Physics of Heteroepitaxy and HeterophasesMasri, P. / Pezoldt, J. / Sumiya, M. / Averous, M. et al. | 2002
- 385
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Growth-Induced Structural Defects in SiC PVT BoulesSkowronski, M. et al. | 2002
- 391
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Polytype Identification and Mapping in Heteroepitaxial Growth of 3C on Atomically Flat 4H-SiC Mesas Using Synchrotron White-Beam X-Ray TopographyDudley, M. / Vetter, W. M. / Huang, X. R. / Neudeck, P. G. / Powell, J. A. et al. | 2002
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Behavior of Micropipes during Growth in 4H-SiCVouroutzis, N. / Yakimova, R. / Syvajarvi, M. / Jacobson, H. / Stoemenos, J. / Janzen, E. et al. | 2002
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Reduced Micropipe Density in Boule-Derived 6H-SiC Substrates via H Etching of Seed CrystalsSaddow, S. E. / Elkington, T. / Smith, M. C. D. et al. | 2002
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Stress Distribution in 2in SiC Wafer Measured by Photoelastic MethodSasaki, M. / Miyanagi, Y. / Nakayama, K. / Shiomi, H. / Nishino, S. et al. | 2002
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Characterization of 2in SiC As-Grown Bulk by SWBXT at SPring-8Sasaki, M. / Hirai, A. / Miyanagi, T. / Furusho, T. / Nishiguchi, T. / Shiomi, H. / Nishino, S. et al. | 2002
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Observation of 2in SiC Wafer by SWBXT at SPring-8Sasaki, M. / Hirai, A. / Miyanagi, T. / Furusho, T. / Nishiguchi, T. / Shiomi, H. / Nishino, S. et al. | 2002
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Analysis of Sub-Surface Damage-Induced Threading Dislocations in Physical Vapor Transport Growth of 6H-SiCLiu, J. Q. / Sanchez, E. K. / Skowronski, M. et al. | 2002
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Investigation of Structural Defects during 4H-SiC Schottky Diode Processing by Synchrotron TopographyPernot, E. / Neyret, E. / Moulin, C. / Pernot-Rejmankova, P. / Templier, F. / Di Cioccio, L. / Billon, T. / Madar, R. et al. | 2002
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Structural Defects in Electrically Degraded 4H-SiC PiN DiodesPersson, P. O. A. / Jacobson, H. / Molina-Aldareguia, J. M. / Bergman, J. P. / Tuomi, T. / Clegg, W. J. / Janzen, E. / Hultman, L. et al. | 2002
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Propagation of Current-Induced Stacking Faults and Forward Voltage Degradation in 4H-SiC PiN DiodesStahlbush, R. E. / Fedison, J. B. / Arthur, S. D. / Rowland, L. B. / Kretchmer, J. W. / Wang, S. et al. | 2002
- 431
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Optical Emission Microscopy of Structural Defects in 4H-SiC PiN DiodesGaleckas, A. / Linnros, J. / Breitholtz, B. et al. | 2002
- 435
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Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiCLiu, J. Q. / Sanchez, E. K. / Skowronski, M. et al. | 2002
- 439
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Theoretical Calculation of Stacking Fault Energies in Silicon CarbideIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2002
- 443
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A Simple Mapping Method for Elementary Screw Dislocations in Homoepitaxial SiC LayersHa, S. / Vetter, W. M. / Dudley, M. / Skowronski, M. et al. | 2002
- 447
-
Replication of Defects from 4H-SiC Wafer to Epitaxial LayerOhno, T. / Yamaguchi, H. / Kojima, K. / Nishio, J. / Masahara, K. / Ishida, Y. / Takahashi, T. / Suzuki, T. / Yoshida, S. et al. | 2002
- 451
-
4H- to 3C-SiC Polytypic Transformation during OxidationOkojie, R. S. / Xhang, M. / Pirouz, P. / Tumakha, S. / Jessen, G. / Brillson, L. J. et al. | 2002
- 455
-
Oxidation-Induced Crystallographic Transformation in Heavily N-Doped 4H-SiC WafersSkromme, B. J. / Palle, K. / Poweleit, C. D. / Bryant, L. R. / Vetter, W. M. / Dudley, M. / Moore, K. / Gehoski, T. et al. | 2002
- 459
-
Investigation of the Relationship between Defects and Electrical Properties of 3C-SiC EpilayersIshida, Y. / Kushibe, M. / Takahashi, T. / Okumura, H. / Yoshida, S. et al. | 2002
- 463
-
RHEED: A Tool for Structural Investigations of Thin Polytypic SiC LayersScharmann, F. / Pezoldt, J. et al. | 2002
- 467
-
Electron-Irradiation-Induced Amorphization of 6H-SiC by 300 keV Transmission Electron Microscope Equipped with a Field-Emission GunBae, I.-T. / Ishimaru, M. / Hirotsu, Y. et al. | 2002
- 471
-
The Nature and Diffusion of Intrinsic Point Defects in SiCBockstedte, M. / Heid, M. / Mattausch, A. / Pankratov, O. et al. | 2002
- 477
-
Theoretical Investigation of an Intrinsic Defect in SiCGali, A. / Deak, P. / Son, N. T. / Janzen, E. et al. | 2002
- 481
-
Carbon Interstitials in SiC: A Model for the D~I~I CenterMattausch, A. / Bockstedte, M. / Pankratov, O. et al. | 2002
- 485
-
Chemical Environment of Atomic Vacancies in Electron Irradiated Silicon Carbide Measured by a 2D-Doppler Broadening TechniqueRempel, A. A. / Blaurock, K. / Reichle, K. J. / Sprengel, W. / Schaefer, H.-E. et al. | 2002
- 489
-
Radiation-Induced Defects in 4H- and 6H-SiC Epilayers Studied by Positron Annihilation and Deep-Level Transient SpectroscopyKawasuso, A. / Weidner, M. / Redmann, F. / Frank, T. / Krause-Rehberg, R. / Pensl, G. / Sperr, P. / Triftshauser, W. / Itoh, H. et al. | 2002
- 493
-
Vacancy Defects in As-Polished and in High-Fluence H^+-Implanted 6H-SiC Detected by Slow Positron Annihilation SpectroscopyBarthe, M.-F. / Desgardin, P. / Henry, L. / Corbel, C. / Britton, D. T. / Kogel, G. / Sperr, P. / Triftshauser, W. / Vicente, P. / diCioccio, L. et al. | 2002
- 497
-
EPR Study of Single Silicon Vacancy-Related Defects in 4H- and 6H-SiCMizuochi, N. / Isoya, J. / Yamasaki, S. / Takizawa, H. / Morishita, N. / Ohshima, T. / Itoh, H. et al. | 2002
- 501
-
The Neutral Silicon Vacancy in SiC: Ligand Hyperfine InteractionWagner, M. / Thinh, N. Q. / Son, N. T. / Baranov, P. G. / Mokhov, E. N. / Hallin, C. / Chen, W. M. / Janzen, E. et al. | 2002
- 505
-
Properties of the UD-1 Deep-Level Center in 4H-SiCMagnusson, B. / Ellison, A. / Janzen, E. et al. | 2002
- 509
-
Electronic Structure of the UD3 Defect in 4H- and 6H-SiCWagner, M. / Magnusson, B. / Chen, W. M. / Janzen, E. et al. | 2002
- 513
-
Depth Distribution of Lattice Damage-Related D~I and D~I~I Defects after Ion Implantation and Annealing of 6H-SiCKoshka, Y. / Melnychuck, G. et al. | 2002
- 517
-
Electrical Properties of Neutron-Irradiated Silicon CarbideKanazawa, S. / Okada, M. / Ishii, J. / Nozaki, T. / Shin, K. / Ishihara, S. / Kimura, I. et al. | 2002
- 521
-
Radiation-Induced Defects in p-Type Silicon CarbideKanazawa, S. / Okada, M. / Nozaki, T. / Shin, K. / Ishihara, S. / Kimura, I. et al. | 2002
- 525
-
Hole and Electron Effective Masses in 6H-SiC Studied by Optically Detected Cyclotron ResonanceSon, N. T. / Hallin, C. / Janzen, E. et al. | 2002
- 529
-
Electronic Localization around Stacking Faults in Silicon CarbideIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2002
- 533
-
Theoretical Study of Cubic Polytype Inclusions in 4H-SiCIwata, H. / Lindefelt, U. / Oberg, S. / Briddon, P. R. et al. | 2002
- 537
-
Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiCNilsson, H.-E. / Englund, U. / Hjelm, M. et al. | 2002
- 541
-
Physical Mechanism for the Anomalous Behavior of n-Type Dopants in SiCMalhan, R. K. / Kozima, J. / Yamamoto, T. / Fukumoto, A. et al. | 2002
- 545
-
Influence of Junction Potential Distribution on Effective Impurity Ionization Time Constants in SiC for Admittance Spectroscopy Data AnalysisLos, A. V. / Mazzola, M. S. et al. | 2002
- 549
-
Electrical Activity of Residual Boron in Silicon CarbideStorasta, L. / Bergman, J. P. / Hallin, C. / Janzen, E. et al. | 2002
- 553
-
Ab Initio Calculations of B Diffusion in SiCRurali, R. / Hernandez, E. / Godignon, P. / Rebollo, J. / Ordejon, P. et al. | 2002
- 557
-
Aluminum and Boron Diffusion into (1&unknown;100) Face SiC SubstratesSoloviev, S. I. / Gao, Y. / Khlebnikov, Y. / Khlebnikov, I. I. / Sudarshan, T. S. et al. | 2002
- 561
-
Impurity-controlled dopant activation - the role of hydrogen in p-type doping of SiCAradi, B. / Gali, A. / Deak, P. / Son, N.T. / Janzen, E. et al. | 2002
- 561
-
Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping in SiCAradi, B. / Gali, A. / Deak, P. / Son, N. T. / Janzen, E. et al. | 2002
- 565
-
Incorporation of Hydrogen (^1H and ^2H) into 4H-SiC during Epitaxial GrowthLinnarsson, M. K. / Forsberg, U. / Janson, M. S. / Janzen, E. / Svensson, B. G. et al. | 2002
- 569
-
Hydrogen Incorporation into SiC Using Plasma-HydrogenationKoshka, Y. / Draper, W. A. / Lakshman, R. Y. / Scofield, J. / Saddow, S. E. et al. | 2002
- 573
-
Polytype Dependence of Transition Metal-Related Deep Levels in 4H-, 6H- and 15R-SiCGrillenberger, J. / Achtziger, N. / Pasold, G. / Witthuhn, W. et al. | 2002
- 577
-
Theoretical Studies of Vanadium Impurity in beta-SiCTairov, Y. M. / Reshanov, S. A. / Parfenova, I. I. / Yuryeva, E. I. / Ivanovskii, A. L. et al. | 2002
- 581
-
New and Improved Quantitative Characterization of SiC Using SIMSWang, L. / Sams, D. B. / Wang, A. / Park, B.-S. et al. | 2002
- 585
-
Experiment and Theory of the Anharmonic Effect in C-H and C-D Vibrations of SiCChoyke, W. J. / Devaty, R. P. / Bai, S. / Gali, A. / Deak, P. / Pensl, G. et al. | 2002
- 589
-
Spectra Associated with Stacking Faults in 4H-SiC Grown in a Hot-Wall CVD ReactorBai, S. / Wagner, G. / Shishkin, E. / Choyke, W. J. / Devaty, R. P. / Zhang, M. / Pirouz, P. / Kimoto, T. et al. | 2002
- 593
-
Characterization of Bulk and Epitaxial SiC Material Using Photoluminescence SpectroscopyHenry, A. / Ellison, A. / Forsberg, U. / Magnusson, B. / Pozina, G. / Janzen, E. et al. | 2002
- 597
-
Characterization of SiC Epitaxial Wafers by Photoluminescence under Deep UV ExcitationTajima, M. / Tanaka, M. / Hoshino, N. et al. | 2002
- 601
-
UV Scanning Photoluminescence Spectroscopy Investigation of 6H- and 4H-SiCMasarotto, L. / Bluet, J. M. / Guillot, G. et al. | 2002
- 605
-
Mapping of the Luminescence Decay of Lightly-Doped n-4H-SiC at Room-TemperatureSchneider, K. / Helbig, R. et al. | 2002
- 609
-
Photoluminescence Investigation of Hydrogen Interaction with Defects in SiCKoshka, Y. / Mazzola, M. S. et al. | 2002
- 613
-
Photoconductivity of Lightly-Doped and Semi-Insulating 4H-SiC and the Free Exciton Binding EnergyIvanov, I. G. / Zhang, J. / Storasta, L. / Janzen, E. et al. | 2002
- 617
-
Characterization of 4H-SiC Band-Edge Absorption Properties by Free-Carrier Absorption Technique with a Variable Excitation SpectrumGrivickas, P. / Grivickas, V. / Galeckas, A. / Linnros, J. et al. | 2002
- 621
-
Spatial Mapping of the Carrier Concentration and Mobility in SiC Wafers by Micro Fourier-Transform Infrared SpectroscopyYaguchi, H. / Narita, K. / Hijikata, Y. / Yoshida, S. / Nakashima, S. / Oyanagi, N. et al. | 2002
- 625
-
Experimental Determination of the Phonon-Eigenvectors of Silicon Carbide by Raman SpectroscopyHerzog, B. / Rohmfeld, S. / Pusche, R. / Hundhausen, M. / Ley, L. / Semmelroth, K. / Pensl, G. et al. | 2002
- 629
-
Sensitive Detection of Defects in alpha and beta SiC by Raman ScatteringNakashima, S. / Nakatake, Y. / Ishida, Y. / Takahashi, T. / Okumura, H. et al. | 2002
- 633
-
Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiCNakashima, S. / Nakatake, Y. / Yano, Y. / Harima, H. / Ohtani, N. / Katsuno, M. et al. | 2002
- 637
-
A Raman Study of Metal-SiC Interface ReactionsKurimoto, E. / Harima, H. / Toda, T. / Sawada, M. / Nakashima, S. / Iwami, M. et al. | 2002
- 641
-
Ultrafast Electron Relaxation Processes in SiCTomita, T. / Saito, S. / Suemoto, T. / Harima, H. / Nakashima, S. et al. | 2002
- 647
-
Optical Characterization of Ion-Implanted 4H-SiCFeng, Z. C. / Yan, F. / Chang, W. Y. / Zhao, J. H. / Lin, J. et al. | 2002
- 651
-
Breakdown Fields along Various Crystal Orientations in 4H-, 6H- and 3C-SiCNakamura, S. / Kumagai, H. / Kimoto, T. / Matsunami, H. et al. | 2002
- 655
-
Quantitative High-Resolution Two-Dimensional Profiling of SiC by Scanning Capacitance MicroscopyRaineri, V. / Giannazzo, F. / Calcagno, L. / Musumeci, P. / Roccaforte, F. / La Via, F. et al. | 2002
- 659
-
Scanning Capacitance Microscopy of SiC Multiple PN Junction Structure Grown by Cold-Wall Chemical Vapor DepositionSuda, J. / Nakamura, S. / Miura, M. / Kimoto, T. / Matsunami, H. et al. | 2002
- 663
-
Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance MicroscopyOsterman, J. / Anand, S. / Linnarsson, M. K. / Hallen, A. et al. | 2002
- 667
-
Nanoscale Electrical Characterization of 3C-SiC Layers by Conductive Atomic Force MicroscopyYahata, A. / Zhang, L. / Shinohe, T. et al. | 2002
- 671
-
Point-Contact Current Voltage Technique for Depth Profiling of Dopants in Silicon CarbideFukuda, Y. / Nishikawa, K. / Shimizu, M. / Iwakuro, H. et al. | 2002
- 675
-
Optical and Electrical Characterization of Free-Standing 3C-SiC Films Grown on Undulant 6in Si SubstratesYamada, T. / Itoh, K. M. et al. | 2002
- 679
-
Influence of Excited States of Deep Acceptors on Hole Concentrations in SiCMatsuura, H. et al. | 2002
- 683
-
p-3C-SiC/n-6H-SiC Heterojunctions: Structural and Electrical CharacterizationLebedev, A. A. / Strel chuk, A. M. / Davydov, D. V. / Savkina, N. S. / Tregubova, A. S. / Kuznetsov, A. N. / Soloviev, V. A. / Poletaev, N. K. et al. | 2002
- 687
-
Scanning Acoustic Microscopy in Porous SiCOstapenko, S. / Smith, M. C. D. / Tarasov, I. / Wolan, J. T. / Mynbaeva, M. / Goings, J. / McKeon, J. C. P. / Saddow, S. E. et al. | 2002
- 691
-
Atomic-Scale Passivation of Silicon Carbide SurfacesSoukiassian, P. et al. | 2002
- 697
-
Adsorption of Metastable Molecular Oxygen on SiC(0001)-√3 x √3Virojanadara, C. / Johansson, L. I. et al. | 2002
- 701
-
Oxidation States Present on SiC (0001) after Oxygen ExposureVirojanadara, C. / Johansson, L. I. et al. | 2002
- 705
-
Adsorbate Effects of the Surface Structure of 6H-SiC(0001) √3 x √3-R30^oAoyama, T. / Hisada, Y. / Mukainakano, S. / Ichimiya, A. et al. | 2002
- 709
-
In Situ Analysis of Thermal Oxidation on H-Terminated 4H-SiC SurfacesJikimoto, T. / Tsuchida, H. / Kamata, I. / Izumi, K. et al. | 2002
- 713
-
A High-Resolution Photoemission Study of Hydrogen-Terminated 6H-SiC SurfacesSieber, N. / Seyller, T. / Ley, L. / Polcik, M. / James, D. / Riley, J. D. / Leckey, R. C. G. et al. | 2002
- 717
-
Wet-Chemical Preparation of Silicate Adlayer Reconstructed SiC(0001) Surfaces as Studied by PES and LEEDSieber, N. / Seyller, T. / Graupner, R. / Ley, L. / Mikalo, R. P. / Hoffmann, P. / Batchelor, D. R. / Schmeisser, D. et al. | 2002
- 721
-
Photoemission Electron Imaging of Transition Metal (Ti, Ni) Surfaces on Si and SiCLabis, J. / Kamezawa, C. / Hirai, M. / Kusaka, M. / Iwami, M. et al. | 2002
- 725
-
In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)Weih, P. / Stauden, T. / Pezoldt, J. et al. | 2002
- 729
-
Atomic-Step Observations on 6H- and 15R-SiC Polished SurfacesVicente, P. / Pernot, E. / Chaussende, D. / Camassel, J. et al. | 2002
- 733
-
Optimization of Interface and Interphase Systems: The Case of SiC and III-V NitridesMasri, P. / Pezoldt, J. / Sumiya, M. / Averous, M. et al. | 2002
- 737
-
Towards Quantum Structures in SiCBechstedt, F. / Fissel, A. / Grossner, U. / Kaiser, U. / Weissker, H.-C. / Wesch, W. et al. | 2002
- 743
-
Modification of SiC Properties by Insertion of Ge and Si Nanocrystals - Description by ab initio Supercell CalculationsWeissker, H.-C. / Furthmuller, J. / Bechstedt, F. et al. | 2002
- 747
-
Growth and Characterization of Three-Dimensional SiC Nanostructures on SiCimalla, V. / Zekentes, K. et al. | 2002
- 751
-
Hole Resonant Tunneling through SiC/Si-dot/SiC HeterostructuresIkoma, Y. / Uchiyama, K. / Watanabe, F. / Motooka, T. et al. | 2002
- 755
-
Development of a Multilayer SiC Surface Micromachining Process with Capabilities and Design Rules Comparable to Conventional Polysilicon Surface MicromachiningSong, X. / Rajgopal, S. / Melzak, J. M. / Zorman, C. A. / Mehregany, M. et al. | 2002
- 759
-
Influence of Deposition Parameters and Temperature on Stress and Strain of In Situ Doped PECVD Silicon CarbidePham, H. T. M. / de Boer, C. R. / Pakula, L. / Sarro, P. M. et al. | 2002
- 763
-
Thermoelectric Properties of 3C-SiC Produced by Silicon CarbonizationMasuda, M. / Mabuchi, H. / Tsuda, H. / Matsui, T. / Morii, K. et al. | 2002
- 767
-
The Brittle-to-Ductile Transition in 4H-SiCZhang, M. / Hobgood, H. M. / Demenet, J. L. / Pirouz, P. et al. | 2002
- 773
-
Annealing of Implanted Layers in (1&unknown;100) and (11&unknown;20) Oriented SiCSatoh, M. et al. | 2002
- 779
-
Range Distributions of Implanted Ions in Silicon CarbideJanson, M. S. / Linnarsson, M. K. / Hallen, A. / Svensson, B. G. et al. | 2002
- 783
-
Phosphorus Ion Implantation into 4H-SiC (0001) and (11&unknown;20)Negoro, Y. / Miyamoto, N. / Kimoto, T. / Matsunami, H. et al. | 2002
- 787
-
Electrical Activation of Implanted Phosphorus Ions in (0001)/(11&unknown;20)-Oriented 4H-SiCSchmid, F. / Laube, M. / Pensl, G. / Wagner, G. / Maier, M. et al. | 2002
- 791
-
Codoping of 4H-SiC with N- and P-Donors by Ion ImplantationLaube, M. / Schmid, F. / Pensl, G. / Wagner, G. et al. | 2002
- 795
-
Improvements in Electrical Properties of n-Type-Implanted 4H-SiC Substrates Using High-Temperature Rapid Thermal AnnealingSenzaki, J. / Harada, S. / Kosugi, R. / Suzuki, S. / Fukuda, K. / Arai, K. et al. | 2002
- 799
-
Low-Temperature Activation of Ion-Implanted Dopants in 4H-SiC by Excimer Laser AnnealingTanaka, Y. / Tanoue, H. / Arai, K. et al. | 2002
- 803
-
Electrical Characteristics of Al^+ Ion-Implanted 4H-SiCTanaka, H. / Tanimoto, S. / Yamanaka, M. / Hoshi, M. et al. | 2002
- 807
-
Micro-Structural and Electrical Properties of Al-Implanted & Lamp-Annealed 4H-SiCNakamura, H. / Watanabe, H. / Yamazaki, J. / Tanaka, N. / Malhan, R. K. et al. | 2002
- 811
-
Comparison between Chemical and Electrical Profiles in Al^+ or N^+ Implanted and Annealed 6H-SiCNipoti, R. / Carnera, A. / Raineri, V. et al. | 2002
- 815
-
Damage Evolution and Recovery in Al-Implanted 4H-SiCZhang, Y. / Weber, W. J. / Jiang, W. / Hallen, A. / Possnert, G. et al. | 2002
- 819
-
Comparison of Al and Al/C Co-Implants in 4H-SiC Annealed with an AlN CapJones, K. A. / Shah, P. B. / Derenge, M. A. / Ervin, M. H. / Gerardi, G. J. / Freitas, J. A. / Braga, G. C. B. / Vispute, R. D. / Sharma, R. P. / Holland, O. W. et al. | 2002
- 823
-
Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiCOhno, T. / Amemiya, K. et al. | 2002
- 827
-
A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature EffectsLazar, M. / Raynaud, C. / Planson, D. / Locatelli, M.-L. / Isoird, K. / Ottaviani, L. / Chante, J. P. / Nipoti, R. / Poggi, A. / Cardinali, G. et al. | 2002
- 831
-
Post-Implantation Annealing Effects on the Surface Morphology and Electrical Characteristics of 6H-SiC Implanted with AluminumOhi, A. / Ohshima, T. / Yoshikawa, M. / Lee, K. K. / Iwami, M. / Itoh, H. et al. | 2002
- 835
-
Ion Implantation - Tool for Fabrication of Advanced 4H-SiC DevicesKalinina, E. / Kholujanov, G. / Gol dberg, Y. / Blank, T. / Onushkin, G. / Strel chuk, A. / Violina, G. / Kossov, V. / Yafaev, R. / Hallen, A. et al. | 2002
- 839
-
Annealing Kinetics of Implantation-Induced Amorphous Layer in 6H-SiC (0001)Nakamura, T. / Matsumoto, S. / Horibe, T. / Satoh, M. et al. | 2002
- 843
-
Direct Observation of the Solid-Phase Recrystallization of Self-Implanted Amorphous SiC Layer on (11&unknown;20), (1&unknown;100), and (0001) Oriented 6H-SiCEryu, O. / Matsuo, D. / Abe, K. / Nakashima, K. et al. | 2002
- 847
-
Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS)Ono, R. / Fujimaki, M. / Senzaki, J. / Tanimoto, S. / Shinohe, T. / Okushi, H. / Arai, K. et al. | 2002
- 851
-
Distribution Profile of Deep Levels in SiC Observed by Isothermal Capacitance Transient SpectroscopyFujimaki, M. / Ono, R. / Kushibe, M. / Masahara, K. / Kojima, K. / Shinohe, T. / Okushi, H. / Arai, K. et al. | 2002
- 855
-
Enhanced Dopant Diffusion Effects in 4H Silicon CarbidePhelps, G. J. / Wright, N. G. / Chester, E. G. / Johnson, C. M. / O Neill, A. G. / Ortolland, S. / Horsfall, A. B. / Vassilevski, K. / Gwilliam, R. M. et al. | 2002
- 859
-
Infrared Investigation of Implantation Damage in 6H-SiCCamassel, J. / Wang, H. / Pernot, J. / Godignon, P. / Mestres, N. / Pascual, J. et al. | 2002
- 863
-
Suppression of Macrostep Formation in 4H-SiC Using a Cap Oxide LayerBahng, W. / Kim, N.-K. / Kim, S. C. / Song, G. H. / Kim, E.-D. et al. | 2002
- 867
-
Masking Process for High-Energy and High-Temperature Ion ImplantationOhyanagi, T. / Onose, H. / Watanabe, A. / Someya, T. / Ohno, T. / Amemiya, K. / Kobayashi, Y. et al. | 2002
- 871
-
Laser Crystallization Mechanism of Amorphous SiC Thin FilmsUrban, S. / Falk, F. / Gorelik, T. / Kaiser, U. et al. | 2002
- 875
-
Experimental and Computer Simulation Studies of Defects and Ion-Solid Interactions in Silicon CarbideWeber, W. J. / Gao, F. / Jiang, W. / Devanathan, R. et al. | 2002
- 879
-
Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC DevicesTanimoto, S. / Kiritani, N. / Hoshi, M. / Okushi, H. et al. | 2002
- 885
-
CoAl Ohmic Contact Materials with Improved Surface Morphology for p-Type 4H-SiCNakatsuka, O. / Koide, Y. / Murakami, M. et al. | 2002
- 889
-
NiSi~2 Ohmic Contact to n-Type 4H-SiCNakamura, T. / Satoh, M. et al. | 2002
- 893
-
Electrical Characterization of Nickel Silicide Contacts on Silicon CarbideRoccaforte, F. / La Via, F. / Raineri, V. / Musumeci, P. / Calcagno, L. et al. | 2002
- 897
-
Effects of Interfacial Reactions on Electrical Properties of Ni Ohmic Contacts on n-Type 4H-SiCHan, S. Y. / Kim, N.-K. / Kim, E.-D. / Lee, J.-L. et al. | 2002
- 901
-
Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact FormationAgueev, O. A. / Svetlichnyi, A. M. / Razgonov, R. N. et al. | 2002
- 905
-
Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC ContactsLitvinov, V. L. / Demakov, K. D. / Agueev, O. A. / Svetlichnyi, A. M. / Konakova, R. V. / Lytvyn, P. M. / Milenin, V. V. et al. | 2002
- 909
-
Effects of Surface Treatments of 6H-SiC upon Metal-SiC InterfacesAbe, K. / Sumitomo, M. / Sumi, T. / Eryu, O. / Nakashima, K. et al. | 2002
- 913
-
Titanium-Based Ohmic Contact on p-Type 4H-SiCJung, K. H. / Cho, N. I. / Lee, J. H. / Yang, S. J. / Kim, C. K. / Lee, B.-T. / Rim, K. H. / Kim, N.-K. / Kim, E.-D. et al. | 2002
- 917
-
Reliable Ohmic Contacts to LPE p-Type 4H-SiC for High-Power p-n DiodeKakanakov, R. / Kassamakova, L. / Hristeva, N. / Lepoeva, G. / Kuznetsov, N. / Zekentes, K. et al. | 2002
- 921
-
Schottky Barriers for Pt on 6H and 4H-SiC (0001), (000&unknown;1), (1&unknown;100) and (1&unknown;210) Faces Measured by I-V, C-V and Internal PhotoemissionShigiltchoff, O. / Kimoto, T. / Hobgood, D. / Neudeck, P. G. / Porter, L. M. / Devaty, R. P. / Choyke, W. J. et al. | 2002
- 925
-
Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky RectifiersHatayama, T. / Kawahito, K. / Kijima, H. / Uraoka, Y. / Fuyuki, T. et al. | 2002
- 929
-
Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiCKassamakova, L. / Kakanakov, R. / Yakimova, R. / Kakanakova-Georgieva, A. / Syvajarvi, M. / Wilzen, L. / Janzen, E. et al. | 2002
- 933
-
Characteristics of Schottky Diodes on 6H-SiC Surfaces after Sacrificial Anodic OxidationKato, M. / Ichimura, M. / Arai, E. et al. | 2002
- 937
-
Reduction of the Barrier Height and Enhancement of Tunneling Current of Titanium Contacts Using Embedded Au Nano-Particles on 4H and 6H Silicon CarbideLee, S.-K. / Zetterling, C.-M. / Ostling, M. / Aberg, I. / Magnusson, M. H. / Deppert, K. / Wernersson, L.-E. / Samuelson, L. / Litwin, A. et al. | 2002
- 941
-
Some Comparative Properties of Diffusion-Welded Contacts to 6H and 4H Silicon CarbideKorolkov, O. / Rang, T. et al. | 2002
- 945
-
Electrical Properties of Graphite/p-Type Homoepitaxial Diamond ContactChen, Y. G. / Hasegawa, M. / Yamanaka, S. / Okushi, H. / Kobayashi, N. et al. | 2002
- 949
-
Reactive Ion Etching Process of 4H-SiC Using the CHF~3/O~2 Mixtures and a Post-O~2 Plasma-Etching ProcessKang, S. C. / Shin, M. W. et al. | 2002
- 953
-
Electrical Properties of 4H-SiC Thin Films Reactively Ion-Etched in SF~6/O~2 PlasmaKim, B. S. / Jeong, J. K. / Um, M. Y. / Na, H. J. / Song, I. B. / Kim, H. J. et al. | 2002
- 957
-
Photoelectrochemical Etching Process of 6H-SiC Wafers Using HF-Based Solution and H~2O~2 Solution as ElectrolytesSong, J. G. / Shin, M. W. et al. | 2002
- 961
-
Oxidation of Silicon Carbide: Problems and SolutionsAfanas ev, V. V. / Bassler, M. / Pensl, G. / Stesmans, A. et al. | 2002
- 967
-
Passivation of the 4H-SiC/SiO~2 Interface with Nitric OxideWilliams, J. R. / Chung, G. Y. / Tin, C. C. / McDonald, K. / Farmer, D. / Chanana, R. K. / Weller, R. A. / Pantelides, S. T. / Holland, O. W. / Das, M. K. et al. | 2002
- 973
-
Passivation of the Oxide/4H-SiC InterfaceJamet, P. / Dimitrijev, S. / Tanner, P. et al. | 2002
- 977
-
Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET MobilitiesLu, C.-Y. / Cooper, J. A. / Chung, G. Y. / Williams, J. R. / McDonald, K. / Feldman, L. C. et al. | 2002
- 981
-
High-Current, NO-Annealed Lateral 4H-SiC MOSFETsDas, M. K. / Chung, G. Y. / Williams, J. R. / Saks, N. S. / Lipkin, L. A. / Palmour, J. W. et al. | 2002
- 985
-
N~2O Processing Improves the 4H-SiC:SiO~2 InterfaceLipkin, L. A. / Das, M. K. / Palmour, J. W. et al. | 2002
- 989
-
Reduction of Interface Trap Density in 4H-SiC MOS by High-Temperature OxidationOkuno, E. / Amano, S. et al. | 2002
- 993
-
Improving 4H-SiC/SiO~2 Interface Properties by Depositing Ultra-Thin Si Nitride Layer Prior to Formation of SiO~2 and AnnealingWang, X. W. / Bu, H. M. / Laube, B. L. / Caragianis-Broadbridge, C. / Ma, T. P. et al. | 2002
- 997
-
Improvement of SiO~2/alpha-SiC Interface Properties by Nitrogen Radical TreatmentMaeyama, Y. / Yano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. / Shirafuji, T. et al. | 2002
- 1001
-
New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS StructuresOlafsson, H. O. / Sveinbjornsson, E. O. / Rudenko, T. E. / Kilchytska, V. I. / Tyagulski, I. P. / Osiyuk, I. N. et al. | 2002
- 1005
-
On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor StructuresOlafsson, H. O. / Allerstam, F. / Sveinbjornsson, E. O. et al. | 2002
- 1009
-
Effects of Successive Annealing of Oxides on Electrical Characteristics of Silicon Carbide Metal-Oxide-Semiconductor StructuresYoshikawa, M. / Satoh, M. / Ohshima, T. / Itoh, H. et al. | 2002
- 1013
-
The Investigation of 4H-SiC/SiO~2 Interfaces by Optical and Electrical MeasurementsIshida, Y. / Takahashi, T. / Okumura, H. / Jikimoto, T. / Tsuchida, H. / Yoshikawa, M. / Tomioka, Y. / Midorikawa, M. / Hijikata, Y. / Yoshida, S. et al. | 2002
- 1017
-
Characteristics of Mobile Ions in the SiO~2 Films of SiC-MOS StructuresJang, S. J. / Song, H. J. / Oh, K. Y. / Lee, K. H. / Lim, Y. J. / Cho, N. I. et al. | 2002
- 1021
-
Abnormal Hysteresis Property of SiC Oxide C-V CharacteristicsChoi, J.-S. / Lee, W.-S. / Shin, D.-H. / Lee, H.-G. / Kim, Y.-S. / Park, K.-H. et al. | 2002
- 1025
-
ESR Characterization of SiC Bulk Crystals and SiO~2/SiC InterfaceIsoya, J. / Kosugi, R. / Fukuda, K. / Yamasaki, S. et al. | 2002
- 1029
-
Characterization of the Interfaces between SiC and Oxide Films by Spectroscopic EllipsometryTomioka, Y. / Iida, T. / Midorikawa, M. / Tukada, H. / Yoshimoto, K. / Hijikata, Y. / Yaguchi, H. / Yoshikawa, M. / Ishida, Y. / Kosugi, R. et al. | 2002
- 1033
-
X-Ray Photoelectron Spectroscopy Studies of Post-Oxidation Process Effects on Oxide/SiC InterfacesHijikata, Y. / Yaguchi, H. / Yoshikawa, M. / Yoshida, S. et al. | 2002
- 1037
-
SIMS Analyses of SiO~2/4H-SiC(0001) InterfaceYamashita, K. / Kitabatake, M. / Kusumoto, O. / Takahashi, K. / Uchida, M. / Miyanaga, R. / Itoh, H. / Yoshikawa, M. et al. | 2002
- 1041
-
Hall Measurements of Inversion and Accumulation-Mode 4H-SiC MOSFETsChatty, K. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. / Arnold, E. / Alok, D. et al. | 2002
- 1045
-
Correlation between Inversion Channel Mobility and Interface Traps near the Conduction Band in SiC MOSFETsSuzuki, S. / Harada, S. / Kosugi, R. / Senzaki, J. / Fukuda, K. et al. | 2002
- 1049
-
Influence of the Wet Re-Oxidation Procedure on Inversion Mobility of 4H-SiC MOSFETsKosugi, R. / Okamoto, M. / Suzuki, S. / Senzaki, J. / Harada, S. / Fukuda, K. / Arai, K. et al. | 2002
- 1053
-
Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETsKojima, K. / Ohno, T. / Suzuki, S. / Senzaki, J. / Harada, S. / Fukuda, K. / Kushibe, M. / Masahara, K. / Ishida, Y. / Takahashi, T. et al. | 2002
- 1057
-
A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11&unknown;20) Face Using H~2 and H~2O Vapor Atmosphere Post-Oxidation AnnealingFukuda, K. / Senzaki, J. / Kushibe, M. / Kojima, K. / Kosugi, R. / Suzuki, S. / Harada, S. / Suzuki, T. / Tanaka, T. / Arai, K. et al. | 2002
- 1061
-
Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11&unknown;20) Face Using Hydrogen Post-Oxidation AnnealingSenzaki, J. / Fukuda, K. / Kojima, K. / Harada, S. / Kosugi, R. / Suzuki, S. / Suzuki, T. / Arai, K. et al. | 2002
- 1065
-
4H-SiC MOSFETs on (03&unknown;38) FaceHirao, T. / Yano, H. / Kimoto, T. / Matsunami, H. / Shiomi, H. et al. | 2002
- 1069
-
Improved Channel Mobility in Normally-Off 4H-SiC MOSFETs with Buried Channel StructureHarada, S. / Suzuki, S. / Senzaki, J. / Kosugi, R. / Adachi, K. / Fukuda, K. / Arai, K. et al. | 2002
- 1073
-
4H-SiC ACCUFET with a Two-Layer Stacked Gate OxideKaneko, S. / Tanaka, H. / Shimoida, Y. / Kiritani, N. / Tanimoto, S. / Yamanaka, M. / Hoshi, M. et al. | 2002
- 1077
-
4H-SiC Delta-Doped Accumulation-Channel MOS FETYokogawa, T. / Takahashi, K. / Kusumoto, O. / Uchida, M. / Yamashita, K. / Kitabatake, M. et al. | 2002
- 1081
-
Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC InterfaceHatakeyama, T. / Harada, S. / Suzuki, S. / Senzaki, J. / Kosugi, R. / Fukuda, K. / Shinohe, T. / Arai, K. et al. | 2002
- 1085
-
TCAD Optimisation of 4H-SiC Channel-Doped MOSFET with P-Polysilicon GateAdachi, K. / Johnson, C. M. / Arai, K. / Fukuda, K. / Harada, S. / Shinohe, T. et al. | 2002
- 1089
-
Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETsChatty, K. / Banerjee, S. / Chow, T. P. / Gutmann, R. J. et al. | 2002
- 1093
-
Gamma-Ray Irradiation Effects on the Electrical Characteristics of 6H-SiC MOSFETs with Annealed Gate-OxideOhshima, T. / Lee, K. K. / Ohi, A. / Yoshikawa, M. / Itoh, H. et al. | 2002
- 1097
-
Radiation Response of p-Channel 6H-SiC MOSFETs Fabricated Using Pyrogenic ConditionsLee, K. K. / Ohshima, T. / Itoh, H. et al. | 2002
- 1101
-
Surface Morphology and Chemistry of 4H- and 6H-SiC after Cyclic OxidationOkojie, R. S. / Lukco, D. / Keys, L. / Tumakha, S. / Brillson, L. J. et al. | 2002
- 1105
-
Plasma Oxidation of SiC at Low Temperatures (below 300^oC)Satoh, M. / Shimada, H. / Nakamura, T. / Nagamoto, N. / Yanagihara, S. et al. | 2002
- 1109
-
Low-Temperature Thermal Oxidation of Ion-Amorphized 6H-SiCNipoti, R. / Parisini, A. / Poggi, A. et al. | 2002
- 1113
-
Oxidation of Porous 4H-SiC SubstratesSoloviev, S. / Das, T. / Sudarshan, T. S. et al. | 2002
- 1119
-
Advances in SiC Materials and Technology for Schottky Diode ApplicationsDi Cioccio, L. / Billon, T. et al. | 2002
- 1125
-
Comparison of 4H-SiC pn, Pinch and Schottky Diodes for the 3 kV RangePeters, D. / Friedrichs, P. / Schorner, R. / Stephani, D. et al. | 2002
- 1129
-
A JBS Diode with Controlled Forward Temperature Coefficient and Surge Current CapabilityDahlquist, F. / Lendenmann, H. / Ostling, M. et al. | 2002
- 1133
-
Impact of Material Defects on SiC Schottky Barrier DiodesMorisette, D. T. / Cooper, J. A. et al. | 2002
- 1137
-
A Comparative Study of the Electrical Properties of 4H-SiC Epilayers with Continuous and Dissociated MicropipesKamata, I. / Tsuchida, H. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1141
-
Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current MeasurementsTsuji, T. / Izumi, S. / Ueda, A. / Fujisawa, H. / Ueno, K. / Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1145
-
4H-SiC Schottky Diodes with High On/Off Current RatioVassilevski, K. V. / Horsfall, A. B. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. et al. | 2002
- 1149
-
Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky DiodesHorsfall, A. B. / Vassilevski, K. V. / Johnson, C. M. / Wright, N. G. / O Neill, A. G. / Gwilliam, R. M. et al. | 2002
- 1153
-
Performance of 4H-SiC Schottky Diodes with Al-Doped p-Guard-Ring Junction Termination at Reverse BiasFelsl, H. P. / Wachutka, G. et al. | 2002
- 1157
-
High-Voltage Pulse Instabilities in SiC Schottky Diodes with Implanted Resistive Edge TerminationsMorisette, D. T. / Cooper, J. A. et al. | 2002
- 1161
-
Development of 600 V/8 A SiC Schottky Diodes with Epitaxial Edge TerminationTemplier, F. / Ferret, P. / Di Cioccio, L. / Collard, E. / Lhorte, A. / Billon, T. et al. | 2002
- 1165
-
Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier DiodeOhtsuka, K. / Sugimoto, H. / Kinouchi, S. / Tarui, Y. / Imaizumi, M. / Takami, T. / Ozeki, T. et al. | 2002
- 1169
-
Reverse Characteristics of a 4H-SiC Schottky Barrier DiodeHatakeyama, T. / Shinohe, T. et al. | 2002
- 1173
-
Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe DensitySyrkin, A. / Dmitriev, V. / Yakimova, R. / Henry, A. / Janzen, E. et al. | 2002
- 1177
-
4H-SiC MPS Diode Fabrication and Characterization in an Inductively Loaded Half-Bridge Inverter up to 100 kWAlexandrov, P. / Wright, B. / Pan, M. / Weiner, M. / Fursin, L. / Zhao, J. H. et al. | 2002
- 1181
-
Performance of SiC Bipolar (PiN) and Unipolar (SBD) Power Rectifiers in Current-Voltage-Frequency Parameter SpaceMorisette, D. T. / Cooper, J. A. et al. | 2002
- 1185
-
Application-Oriented Unipolar Switching SiC DevicesFriedrichs, P. / Mitlehner, H. / Schorner, R. / Dohnke, K.-O. / Elpelt, R. / Stephani, D. et al. | 2002
- 1191
-
High-Performance UMOSFETs in 4H-SiCLi, Y. / Cooper, J. A. / Capano, M. A. et al. | 2002
- 1195
-
Large-Area (3.3 mm x 3.3 mm) Power MOSFETs in 4H-SiCRyu, S.-H. / Agarwal, A. / Richmond, J. T. / Das, M. / Lipkin, L. A. / Palmour, J. / Saks, N. / Williams, J. et al. | 2002
- 1199
-
5.0 kV 4H-SiC SEMOSFET with Low RonS of 88 m Omega cm^2Sugawara, Y. / Asano, K. / Takayama, D. / Ryu, S. / Singh, R. / Palmour, J. / Hayashi, T. et al. | 2002
- 1203
-
Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETsImaizumi, M. / Tarui, Y. / Sugimoto, H. / Ohtsuka, K. / Takami, T. / Ozeki, T. et al. | 2002
- 1207
-
Optimized P-Well Profile Preventing Punch-Through for 4H-SiC Power MOSFETsShimoida, Y. / Kaneko, S. / Tanaka, H. / Hoshi, M. et al. | 2002
- 1211
-
SiC Vertical DACFET (Vertical Delta-Doped Accumulation Channel MOSFET)Kusumoto, O. / Yokogawa, T. / Yamashita, K. / Takahashi, K. / Kitabatake, M. / Uchida, M. / Miyanaga, R. et al. | 2002
- 1215
-
4H- and 6H-SiC MOSFETs Fabricated on Sloped Sidewalls Formed by Molten KOH EtchingWahab, Q. / Kosugi, H. / Yano, H. / Hallin, C. / Kimoto, T. / Matsunami, H. et al. | 2002
- 1219
-
A 600 V SiC Trench JFETGupta, R. N. / Chang, H. R. / Hanna, E. / Bui, C. et al. | 2002
- 1223
-
A Novel High-Voltage Normally-Off 4H-SiC Vertical JFETZhao, J. H. / Li, X. / Tone, K. / Alexandrov, P. / Pan, M. / Weiner, M. et al. | 2002
- 1227
-
2 kV 4H-SiC Junction FETsOnose, H. / Watanabe, A. / Someya, T. / Kobayashi, Y. et al. | 2002
- 1231
-
Design and Processing of High-Voltage 4H-SiC Trench Junction Field-Effect TransistorZhu, L. / Chow, T. P. et al. | 2002
- 1235
-
Influence of Trenching Effect on the Characteristics of Buried-Gate SiC Junction Field-Effect TransistorsKoo, S.-M. / Lee, S.-K. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E. et al. | 2002
- 1239
-
Static and Dynamic Behaviour of SiC JFET/Si MOSFET Cascade Configuration for High-Performance Power SwitchesMihaila, A. / Udrea, F. / Azar, R. / Brezeanu, G. / Amaratunga, G. et al. | 2002
- 1243
-
Simulation Study of a Novel Current-Limiting Device: A Vertical alpha-SiC JEFT - Controlled Current LimiterTournier, D. / Godignon, P. / Planson, D. / Chante, J. P. / Sarrus, F. et al. | 2002
- 1247
-
Realization of a High-Current and Low R~O~N 600V Current-Limiting DeviceNallet, F. / Godignon, P. / Planson, D. / Raynaud, C. / Chante, J. P. et al. | 2002
- 1251
-
Super-Junction Device Forward Characteristics and Switched Power LimitationsAdachi, K. / Johnson, C. M. / Ohashi, H. / Shinohe, T. / Kinoshita, K. / Arai, K. et al. | 2002
- 1255
-
Silicon/Oxide/Silicon Carbide (SiOSiC) - A New Approach to High-Voltage, High-Frequency Integrated CircuitsUdrea, F. / Mihaila, A. / Azar, R. et al. | 2002
- 1255
-
Silicon/oxide/silicon carbide (SiOSiC) - a new approach for high voltage, high frequencies integrated circuitsUdrea, F. / Mihaila, A. / Azar, R. et al. | 2002
- 1259
-
High-Power SiC Diodes: Characteristics, Reliability and Relation to Material DefectsLendenmann, H. / Dahlquist, F. / Bergman, J. P. / Bleichner, H. / Hallin, C. et al. | 2002
- 1265
-
High-Temperature Performance of 10 Kilovolts, 200 Amperes (Pulsed) 4H-SiC PiN RectifiersSingh, R. / Irvine, K. G. / Richmond, J. T. / Palmour, J. W. et al. | 2002
- 1269
-
Study of SiC PiN Diodes Subjected to High Current Density PulsesHillkirk, L. M. / Bakowski, M. et al. | 2002
- 1273
-
High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion ImplantationNegoro, Y. / Miyamoto, N. / Kimoto, T. / Matsunami, H. et al. | 2002
- 1277
-
Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic DefectsDomeij, M. / Brunahl, H. / Ostling, M. et al. | 2002
- 1281
-
Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC DiodesLiu, J. Q. / Skowronski, M. / Hallin, C. / Soderholm, R. / Lendenmann, H. et al. | 2002
- 1285
-
Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial LayersZimmermann, U. / Osterman, J. / Zhang, J. / Henry, A. / Hallen, A. et al. | 2002
- 1289
-
Study of 4H-SiC High-Voltage Bipolar Diodes under Reverse Bias Using Electrical and OBIC CharacterizationIsoird, K. / Lazar, M. / Locatelli, M.-L. / Raynaud, C. / Planson, D. / Chante, J. P. et al. | 2002
- 1293
-
Photon Emission Analysis of Defect-Free 4H-SiC pn Diodes in Avalanche RegimeBanc, C. / Bano, E. / Ouisse, T. / Vassilevski, K. / Zekentes, K. et al. | 2002
- 1297
-
Electroluminescence Analysis of Al^+ and B^+ Implanted pn DiodesFujisawa, H. / Tsuji, T. / Izumi, S. / Ueno, K. / Kamata, I. / Tsuchida, T. / Jikimoto, T. / Izumi, K. et al. | 2002
- 1301
-
An Effective High-Voltage Termination for SiC Planar pn Junctions for Use in High-Voltage Devices and UV DetectorsBrezeanu, G. / Badila, M. / Godignon, P. / Millan, J. / Udrea, F. / Mihaila, A. / Amaratunga, G. et al. | 2002
- 1305
-
A Novel Technology for the Formation of a Very Small Bevel Angle for Edge TerminationYan, F. / Qin, C. / Zhao, J. H. / Weiner, M. et al. | 2002
- 1309
-
The Deep Boron Level in High-Voltage PiN DiodesAberg, D. / Hallen, A. / Osterman, J. / Zimmermann, U. / Svensson, B. G. et al. | 2002
- 1313
-
Electrical Characteristics of 4H-SiC pn Diode Grown by LPE MethodKuznetsov, N. / Bauman, D. / Gavrilin, A. / Kalinina, E. et al. | 2002
- 1317
-
Highly-Doped Implanted pn Junction for SiC Zener Diodes FabricationGodignon, P. / Jorda, X. / Nipoti, R. / Cardinali, G. / Mestres, N. et al. | 2002
- 1321
-
Unipolar and Bipolar SiC Integral Cascoded Switches with MOS and Junction Gate - Simulation StudyBakowski, M. / Gustafsson, U. et al. | 2002
- 1325
-
All-SiC Inductively-Loaded Half-Bridge Inverter Characterization of 4H-SiC Power BJTs up to 400V/22 ALuo, Y. / Fursin, L. / Zhao, J. H. / Alexandrov, P. / Wright, B. / Weiner, M. et al. | 2002
- 1329
-
Improvement and Analysis of Implanted-Emitter Bipolar Junction Transistors in 4H-SiCTang, Y. / Fedison, J. B. / Chow, T. P. et al. | 2002
- 1333
-
On the Temperature Coefficient of 4H-SiC npn Transistor Current GainLi, X. / Luo, Y. / Zhao, J. H. / Alexandrov, P. / Pan, M. / Weiner, M. et al. | 2002
- 1337
-
Investigation of Thermal Properties in Fabricated 4H-SiC High-Power Bipolar TransistorsDanielsson, E. / Zetterling, C.-M. / Ostling, M. / Forsberg, U. / Janzen, E. et al. | 2002
- 1341
-
Hybrid MOS-Gated Bipolar Transistor Using 4H-SiC BJTTang, Y. / Chow, T. P. / Agarwal, A. K. / Ryu, S.-H. / Palmour, J. W. et al. | 2002
- 1345
-
A Novel, Planar 3,000 V Normally-Off Field Gated Bipolar Transistor in 4H-SiCLi, X. / Fursin, L. / Zhao, J. H. / Alexandrov, P. / Pan, M. / Weiner, M. / Burke, T. / Khalil, G. et al. | 2002
- 1349
-
Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO ThyristorsAgarwal, A. K. / Ivanov, P. A. / Levinshtein, M. E. / Palmour, J. W. / Rumyantsev, S. L. et al. | 2002
- 1353
-
4H-SiC IMPATT Diode Fabrication and TestingVassilevski, K. V. / Zorenko, A. V. / Zekentes, K. / Tsagaraki, K. / Bano, E. / Banc, C. / Lebedev, A. A. et al. | 2002
- 1359
-
Demonstration of IMPATT Diode Oscillators in 4H-SiCYuan, L. / Cooper, J. A. / Webb, K. J. / Melloch, M. R. et al. | 2002
- 1363
-
Influence of Semi-Insulating Substrate Purity on the Output Characteristics of 4H-SiC MESFETsSghaier, N. / Bluet, J. M. / Souifi, A. / Guillot, G. / Morvan, E. / Brylinski, C. et al. | 2002
- 1367
-
Development and Demonstration of High-Power X-Band SiC MESFETsChang, H. R. / Hanna, E. / Hacker, J. / Hackett, R. / Bui, C. et al. | 2002
- 1371
-
Hot-Carrier Luminescence in 4H-SiC MESFETsBanc, C. / Bano, E. / Ouisse, T. / Noblanc, O. / Brylinski, C. et al. | 2002
- 1375
-
High-Performance Silicon Carbide MESFET Utilizing Lateral EpitaxyKonstantinov, A. O. / Harris, C. I. / Ericsson, P. et al. | 2002
- 1379
-
Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFETArai, M. / Honda, H. / Ogata, M. / Sawazaki, H. / Ono, S. et al. | 2002
- 1383
-
Fabrication of 4H-SiC Planar MESFETs Having Low Contact ResistanceNa, H. J. / Kim, H. J. / Adachi, K. / Kiritani, N. / Tanimoto, S. / Okushi, H. / Arai, K. et al. | 2002
- 1387
-
Surface Control of 4H-SiC MESFETsHilton, K. P. / Uren, M. J. / Hayes, D. G. / Johnson, H. K. / Wilding, P. J. et al. | 2002
- 1391
-
Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiCMitra, S. / Tucker, J. B. / Rao, M. V. / Papanicolaou, N. / Jones, K. A. et al. | 2002
- 1395
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Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain SimulationsJonsson, R. / Eriksson, J. / Wahab, Q. / Rudner, S. / Rorsman, N. / Zirath, H. / Svensson, C. et al. | 2002
- 1399
-
4H-SiC MESFET Large-Signal Modeling Using Modified Materka ModelLee, S. / Song, N. J. / Burm, J. / An, C. et al. | 2002
- 1403
-
Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFETTournier, D. / Godignon, P. / Montserrat, J. / Planson, D. / Chante, J. P. / Sarrus, F. et al. | 2002
- 1407
-
The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a GateSankin, V. I. / Shkrebiy, P. P. / Kuznetsov, A. N. / Savkina, N. S. et al. | 2002
- 1411
-
Silicon Carbide Microwave LimitersSyrkin, A. / Dmitriev, V. / Lapidus, A. et al. | 2002
- 1415
-
MISiCFET chemical gas sensor for high temperature and corrosive environment applicationsSpetz, A.L. / Uneus, L. / Svenningstorp, H. / Wingbrant, H. / Harris, C.I. / Salomonsson, P. / Tengström, P. / Martensson, P. / Ljung, P. / Mattsson, M. et al. | 2002
- 1415
-
MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment ApplicationsSpetz, A. L. / Uneus, L. / Svenningstorp, H. / Wingbrant, H. / Harris, C. / Salomonsson, P. / Tengstrom, P. / Martensson, P. / Ljung, P. / Mattsson, M. et al. | 2002
- 1419
-
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High TemperaturesUneus, L. / Nakagomi, S. / Linnarsson, M. / Janson, M. S. / Svensson, B. G. / Yakimova, R. / Syvajarvi, M. / Henry, A. / Janzen, E. / Ekedahl, L.-G. et al. | 2002
- 1423
-
Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature ConditionsNakagomi, S. / Shinobu, H. / Uneus, L. / Lundstrom, I. / Ekedahl, L.-G. / Yakimova, R. / Syvajarvi, M. / Henry, A. / Janzen, E. / Spetz, A. L. et al. | 2002
- 1427
-
A New Type of SiC Gas Sensor with a pn-Junction StructureNakashima, K. / Okuyama, Y. / Ando, S. / Eryu, O. / Abe, K. / Yokoi, H. / Oshima, T. et al. | 2002
- 1431
-
Demonstration of 4H-SiC Avalanche Photodiode Linear ArrayYan, F. / Qin, C. / Zhao, J. H. / Bush, M. / Olsen, G. H. et al. | 2002
- 1435
-
4H-SiC Material for Hall Effect and High-Temperature Sensors Working in Harsh EnvironmentsRobert, J.-L. / Contreras, S. / Camassel, J. / Pernot, J. / Juillaguet, S. / Di Cioccio, L. / Billon, T. et al. | 2002
- 1439
-
N and p Type 6H-SiC Films for the Creation Diode and Triode Structure of Nuclear Particle DetectorsIvanov, A. M. / Strokan, N. B. / Lebedev, A. A. / Davydov, D. V. / Savkina, N. S. / Bogdanova, E. V. et al. | 2002
- 1445
-
Sublimation Growth of Bulk AlN Crystals: Materials Compatibility and Crystal QualityEpelbaum, B. M. / Hofmann, D. / Bickermann, M. / Winnacker, A. et al. | 2002
- 1449
-
Crystal Growth of Aluminum Nitride by Sublimation Close Space TechniqueFurusho, T. / Ohshima, S. / Nishino, S. et al. | 2002
- 1453
-
Aluminium Nitride Bulk Crystals by Sublimation Method: Growth and X-Ray CharacterizationDorozhkin, S. I. / Lebedev, A. O. / Maximov, A. Y. / Tairov, Y. M. et al. | 2002
- 1457
-
Heteroepitaxial growth of insulating AIN on 6H-SiC by MBEOnojima, N. / Suda, J. / Matsunami, H. et al. | 2002
- 1457
-
Heteroepitaxial Growth of Insulating AlN on 6H-SiC by MBEOnojima, N. / Suda, J. / Matsunami, H. et al. | 2002
- 1461
-
RHEED Studies of In Effect on the N-Polarity GaN Surface Kinetics Modulation in Plasma-Assisted Molecular-Beam EpitaxyShen, X. Q. / Ide, T. / Shimizu, M. / Okumura, H. et al. | 2002
- 1465
-
Surface Morphology of GaN Epilayer with Si~xN~1~-~x Buffer Layer Grown by Ammonia-source MBEShimizu, M. / Ohkita, H. / Suzuki, A. / Okumura, H. et al. | 2002
- 1469
-
Growth of AlN Films by Hot-Wall CVD and Sublimation Techniques: Effect of Growth Cell PressureKakanakova-Georgieva, A. / Forsberg, U. / Magnusson, B. / Yakimova, R. / Janzen, E. et al. | 2002
- 1473
-
GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon SubstratesMastro, M. / Kryliouk, O. M. / Dann, T. / Anderson, T. J. / Nikolaev, A. E. / Melnik, Y. V. / Dmitriev, V. A. et al. | 2002
- 1477
-
Growth and Characterization of GaGdN and AlGdN on SiC by RF-MBETeraguchi, N. / Suzuki, A. / Nanishi, Y. et al. | 2002
- 1481
-
Growth of Epitaxial (SiC)~x(AlN)~1~-~x Thin Films on 6H-SiC by Ion-Assisted Dual Magnetron Sputter DepositionTungasmita, S. / Persson, P. O. A. / Seppanen, T. / Hultman, L. / Birch, J. et al. | 2002
- 1485
-
Silicon Carbide Buffer Layers for Nitride Growth on SiMasri, P. / Herro, Z. / Stauden, T. / Pezoldt, J. / Sumiya, M. / Averous, M. et al. | 2002
- 1489
-
Crystallographic Growth Models of Wurtzite-Type Thin Films on 6H-SiCOhsato, H. / Wada, K. / Kato, T. / Sun, C. J. / Razeghi, M. et al. | 2002
- 1493
-
Photoluminescence and Electroluminescence Characterization of In~xGa~1~-~xN/In~yGa~1~-~yN Multiple Quantum Well Light Emitting DiodesBergman, J. P. / Pozina, G. / Monemar, B. / Kamiyama, S. / Iwaya, M. / Amano, H. / Akasaki, I. et al. | 2002
- 1497
-
Photoreflectance Characterization of GaNAs/GaAs Multiple Quantum Well StructuresLu, C.-R. / Lee, J.-R. / Chen, Y. Y. / Lee, W.-I. / Lee, S.-C. et al. | 2002
- 1501
-
Raman Scattering from Wurtzite GaN Bulk CrystalVerma, P. / Yamada, A. et al. | 2002
- 1505
-
Recent Progress of AlGaN/GaN Heterojunction FETs for Microwave Power ApplicationsMiyamoto, H. et al. | 2002
- 1505
-
Recent progress of AIGaN/GaN heterojunction FETs for microwave power applicationsMiyamoto, H. et al. | 2002
- 1511
-
High performance AIGaN/GaN HEMTs with recessed gateSano, Y. / Mita, J. / Yamada, T. / Makita, T. / Kaifu, K. / Ishikawa, H. / Egawa, T. / Jimbo, T. et al. | 2002
- 1511
-
High Performance AlGaN/GaN HEMTs with Recessed GateSano, Y. / Mita, J. / Yamada, T. / Makita, T. / Kaifu, K. / Ishikawa, H. / Egawa, T. / Jimbo, T. et al. | 2002
- 1515
-
Broadband Push-Pull Microwave Power Amplifier Using AlGaN/GaN HEMTs on SiCLee, J.-W. / Webb, K. J. et al. | 2002
- 1519
-
Temperature Dependence of DC Characteristics in AlN/GaN Metal Insulator Semiconductor Field Effect TransistorIde, T. / Shimizu, M. / Suzuki, A. / Shen, X.-Q. / Okumura, H. / Nemoto, T. et al. | 2002
- 1523
-
Thermal Analysis of GaN-Based HFET Devices Using the Unit Thermal Profile ApproachPark, J. / Lee, C. C. / Kim, J.-W. / Lee, J.-S. / Lee, W. S. / Shin, J.-H. / Shin, M. W. et al. | 2002
- 1527
-
AlGaN/GaN Hetero Field-Effect Transistor for a Large Current OperationYoshida, S. / Ishii, H. / Li, J. et al. | 2002
- 1531
-
Gallium Nitride Power Device Design TradeoffsMatocha, K. / Chow, T. P. / Gutmann, R. J. et al. | 2002
- 1535
-
Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited OxidesMatocha, K. / Chow, T. P. / Gutmann, R. J. et al. | 2002