1.3-1.5 micrometer electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures (English)
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- New search for: Zvonkov, B.N.
- New search for: Mokeeva, P.B.
- New search for: Uskova, E.A.
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In:
HCIS, International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, 13
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S469-S471
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2004
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ISSN:
- Conference paper / Print
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Title:1.3-1.5 micrometer electroluminescence from Schottky diodes made on Au-InAs/GaAs quantum-size heterostructures
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Additional title:1,3-1,5 Mikrometer-Elektrolumineszenz von Schottky-Dioden auf Au-InAs/GaAs-Quanten-Heterostrukturen
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Contributors:Baidus, N.V. ( author ) / Zvonkov, B.N. ( author ) / Mokeeva, P.B. ( author ) / Uskova, E.A. ( author ) / Tikhov, S.V. ( author ) / Vasilevskiy, M.I. ( author ) / Gomes, M.J.M. ( author ) / Filonovich, S.A. ( author )
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Published in:Semiconductor Science and Technology ; 19, 4 ; S469-S471
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Publisher:
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Publication date:2004
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Size:3 Seiten, 1 Bild, 8 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:Schottky-Diode , Schottky-Barriere , Gold , Indiumarsenid , Galliumarsenid , Heterostruktur , Quantentopf , Elektrolumineszenz , Quantenpunkt , Exciton , Schichtdicke , chemische Zusammensetzung , Galliumindiumarsenid , Ladungsträgerinjektion , Rekombination , Grenzfläche , Raumtemperatur , Quantenausbeute , Raumladungszone , Emissionsspektrum , Wellenlänge
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