Fabrication of CaF2/Si/CaF2 resonant-tunneling diodes by B-surfactant enhanced epitaxy of Si quantum-well layers (English)
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In:
IEEE Conference on Nanotechnology, 4
;
376-378
;
2004
- Conference paper / Print
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Title:Fabrication of CaF2/Si/CaF2 resonant-tunneling diodes by B-surfactant enhanced epitaxy of Si quantum-well layers
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Contributors:Wang, C.R. ( author ) / Bierkandt, M. ( author ) / Muller, B.H. ( author ) / Bugiel, E. ( author ) / Hofmann, K.R. ( author )
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Published in:IEEE Conference on Nanotechnology, 4 ; 376-378
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Publisher:
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Publication date:2004
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Size:3 Seiten, 10 Quellen
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:amorpher Halbleiter , Bor , Calciumverbindung , Stromdichte , Elementhalbleiter , monomolekulare Schicht , negativer Widerstand , Halbleiterepitaxialschicht , Halbleiterwachstum , Quantentopf , Silicium , Oberflächenrekonstruktion , oberflächenaktiver Stoff , Strom-Spannungs-Kennlinie , 300-Kelvin-Bereich , 80-Kelvin-Bereich
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