Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers (English)
- New search for: Aidam, R.
- New search for: Losch, R.
- New search for: Walther, M.
- New search for: Driad, R.
- New search for: Kallenbach, S.
- New search for: Aidam, R.
- New search for: Losch, R.
- New search for: Walther, M.
- New search for: Driad, R.
- New search for: Kallenbach, S.
In:
IPRM, International Conference on Indium Phosphide and Related Materials, 16
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342-345
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2004
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ISBN:
- Conference paper / Print
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Title:Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers
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Contributors:Aidam, R. ( author ) / Losch, R. ( author ) / Walther, M. ( author ) / Driad, R. ( author ) / Kallenbach, S. ( author )
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Published in:
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Publisher:
- New search for: IEEE Operations Center
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Place of publication:Piscataway
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Publication date:2004
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Size:4 Seiten
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ISBN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Plenary session| 2004
- 3
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PL1 Advances and Trends in OMVPE and MBE for III V EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 3
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Advances and trends in OMVPE and MBE for III V epitaxyNelson, D. et al. | 2004
- 4
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PL2 III-V Nanostructures for Quantum Dot Lasers and Microcavity DevicesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 4
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III-V nanostructures for quantum dot lasers and microcavity devicesDeppe, D.G. et al. | 2004
- 8
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PL3 Next-Generation Hybrid Design of Optoelectronic Components with Electronic Components Based on InP and Related MaterialsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 8
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Next-generation hybrid design of optoelectronic components with electronic components based on InP and related materialsTakeyari, R. / Kikuchi, N. et al. | 2004
- 10
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InP-based IC technologies for 100-Gbit/s and beyondMurata, K. / Sano, K. / Enoki, T. / Sugahara, H. / Tokumitsu, M. et al. | 2004
- 10
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TuA-1-1 InP-Based IC Technologies for 100-Gbit/s and BeyondJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 16
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High-speed series-connected voltage-balancing pulse driver using InP HEMTsUmedam, Y. / Kanda, A. / Sano, K. / Murata, K. / Sugahara, H. et al. | 2004
- 16
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TuA-1-2 High-Speed Series-Connected Voltage-Balancing Pulse Driver Using InP HEMTsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 20
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TuA-1-3 High Performance of W-Band MMICs Using 60nm InGaAs HEMT TechnologyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 20
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High performance of W-band MMICs using 60 nm InGaAs HEMT technologyKim, S. / Song, S. / Choi, W. / Lee, S. / Ko, W. / Kwon, Y. / Seo, K. et al. | 2004
- 24
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TuA-1-4 0.15 mum Gate Length MHEMT Technology for 77GHz Automotive Radar ApplicationsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 24
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0.15 /spl mu/m gate length MHEMT technology for 77 GHz automotive radar applicationsJin Hee Lee, / Hyung Sup Yoon, / Jae Yeob Shim, / Ju Yeon Hong, / Dong Min Kang, / Hae Cheon Kim, / Kyung Ik Cho, / Kyung Ho Lee, / Boo Woo Kim, et al. | 2004
- 28
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4-12 GHz InP HEMT-based MMIC low-noise amplifierLimacher, R. / Auf der Maur, M. / Meier, H. / Megej, A. / Orzati, A. / Bachtod, W. et al. | 2004
- 28
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TuA-1-5 4-12 GHz InP HEMT-Based MMIC Low-Noise AmplifierJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 32
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High In-content InP-substrate based GaInAsN and GaInAsN QW diode lasers emitting in the 2.2 to 2.3 /spl mu/m wavelength rangeWagner, J. / Serries, D. / Kohler, K. / Ganser, P. / Maier, M. / Kirste, L. / Kiefer, R. et al. | 2004
- 32
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TuB-1-1 High In-Content InP-Substrate Based GaInAsN and GaInAsN QW Diode Lasers Emitting in the 2.2 to 2.3 mum Wavelength RangeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 36
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TuB-1-2 Origin of Non-Radiative Center of GaInNAs Grown by MOVPEJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 36
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Origin of non-radiative center of GaInNAs grown by MOVPEYamada, T. / Ishizuka, T. / Sawamura, A. / Iguchi, Y. / Saito, T. / Katsuyama, T. / Takagishi, S. / Nomura, K. / Nakayama, M. et al. | 2004
- 40
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TuB-1-3 1.3-mum Laser Diode with a High-quality C-Doped InAlAsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 40
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1.3-/spl mu/m laser diode with a high-quality C-doped InAlAsKurihara, K. / Arai, N. / Ueda, R. / Takashima, M. / Sakata, K. / Takahara, M. / Shimoyama, K. et al. | 2004
- 44
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In-situ monitoring of AlGaInP by reflectance spectroscopy in metalorganic vapor phase epitaxyWatatani, C. / Hanamaki, Y. / Takemi, M. / Ono, K. / Mihashi, Y. / Nishimura, T. et al. | 2004
- 44
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TuB-1-4 In-situ Monitoring of AlGalnP by Reflectance Spectroscopy in Metalorganic Vapor Phase EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 48
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TuB-1-5 Ultra Low Background InGaAs Epi-layer on InP for PIN Applications by Production MBEJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 48
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Ultra low background InGaAs epi-layer on InP for PIN applications by production MBEXiaojun Jin, / Pinsukanjana, P. / Pepper, J. / Gang He, / Partyka, P. / Minh Le, / Haijun Zhu, / Boehme, C. / Barnes, B. / Marquis, J. et al. | 2004
- 52
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TuA-2-1 Low Threshold Operation of MOCVD Grown 1.3mum Range GaInNAs Triple Quantum-Well Lasers with Low N Content GaNAs Barrier LayersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 52
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Low threshold operation of MOCVD grown 1.3 /spl mu/m range GaInNAs triple quantum-well lasers with low N content GaNAs barrier layersKaminishi, M. / Sato, S. / Takahashi, T. / Satoh, S. et al. | 2004
- 56
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TuA-2-2 The Effect of Current Annealing for GaInNAs/GaAs Lasers Grown by Metalorganic Chemical Vapor DepositionJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 56
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The effect of current annealing for GaInNAs/GaAs laser grown by metalorganic chemical vapor depositionSaito, A. / Miyamoto, T. / Kawaguchi, M. / Koyama, F. et al. | 2004
- 60
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Room temperature cw lasing from GaInNAs quantum dots by solid source molecular beam epitaxySun, Z.Z. / Yoon, S.F. / Yew, K.C. / Bo, B.X. et al. | 2004
- 60
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TuA-2-3 Room Temperature CW Lasing from GaInNAs Quantum Dots Grown by Solid Source Molecular Beam EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 64
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TuA-2-4 Middle-Range Visible Light Emitting Devices Fabricated Using BeZnSeTe/MgZnCdSe II-VI Compounds on InP SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 64
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Middle-range visible light emitting devices fabricated using BeZnSeTe/MgZnCdSe II-VI compounds on InP substratesSaitoh, T. / Nomura, I. / Takashima, Y. / Nakai, Y. / Yamazaki, T. / Kikuchi, A. / Kishino, K. et al. | 2004
- 68
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TuB-2-1 In-situ Scanning Tunneling Microscopy Observation of InAs Quantum Dots on GaAs(001) during Molecular Beam Epitaxy GrowthJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 68
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In-situ scanning tunneling microscopy observation of InAs quantum dots on GaAs(001) during molecular beam epitaxy growthTsukamoto, S. / Bell, G.R. / Arakawa, Y. et al. | 2004
- 74
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Online control of quantum dot laser growthPohl, U.W. / Kaiander, I. / Potschke, K. / Hopfer, F. / Zettler, J.-T. / Bimberg, D. et al. | 2004
- 74
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TuB-2-2 Online Control of Quantum Dot Laser GrowthJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 77
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TuB-2-3 Photoluminescence Probing of Non-Radiative Channels in Hydrogenated In(Ga)As/GaAs Quantum DotsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 77
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Photoluminescence probing of non-radiative channels in hydrogenated In(Ga)As/GaAs quantum dotsSaint-Girons, G. / Lemaitre, A. / Navarro-Paredes, V. / Patriarche, G. / Rao, E.V.K. / Sagnes, I. / Theys, B. et al. | 2004
- 81
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Controlling the uniformity of self-assembled InAs/GaAs quantum dots by a combined GaAs/InGaAs strained buffer layerTao Yang, / Tsukamoto, S. / Tatebayashi, J. / Nishioka, M. / Arakawa, Y. et al. | 2004
- 81
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TuB-2-4 Controlling the Uniformity of Self-Assembled InAs/GaAs Quantum Dots by a Combined GaAs/InGaAs Strained Buffer LayerJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 85
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TuB-2-5 Stacking of over 150 Layers of InAs Quantum Dots on InP(311)B SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 85
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Stacking of over 150 layers of InAs quantum dots on InP(311)B substratesAkahane, K. / Yamamoto, N. / Gozu, S. / Ohtani, N. et al. | 2004
- 89
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TuA-3-1 Photonic Crystals and Related Photonic NanodevicesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 89
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Photonic crystals and related photonic nanodevicesBaba, T. et al. | 2004
- 94
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TuA-3-2 Sapphire-Bonded Photonic Crystal LasersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 94
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Sapphire-bonded photonic crystal lasersCao, J.R. / Zhijian Wei, / Sangjun Choi, / Wan Kuang, / O'Brien, J.D. / Danial Dapkus, P. et al. | 2004
- 96
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TuA-3-3 Tailored InP-Based Quantum Dash Structures for Ultra-Wide Gain Bandwidth ApplicationsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 96
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Tailored InP-based quantum dash structures for ultra-wide gain bandwidth applicationsSomers, A. / Weichelt, Ch. / Schwertberger, R. / Reithmaier, J.P. / Forchel, A. et al. | 2004
- 100
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TuA-3-4 GaInAsP/InP Multiple-Quantum-Wire Lasers with Narrow (14 nm) Quantum-Wire StructureJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 100
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GaInAsP/InP multiple-quantum-wire lasers with narrow (14 nm) quantum-wire structureYagi, H. / Sano, T. / Ohira, K. / Miura, K. / Maruyama, T. / Haque, A. / Arai, S. et al. | 2004
- 104
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GaAs-InAs short-period superlattice/InP(411)A self-formed quantum dot light emitting diodes with 1.3-1.5 /spl mu/m light emissionShimada, T. / Mori, J. / Hasegawa, S. / Asahi, H. et al. | 2004
- 104
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TuA-3-5 GaAs-InAs Short-Period Superlattice/InP(411)A Self-Formed Quantum Dot Light Emitting Diodes with 1.3-1.5 mum Light EmissionJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 108
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TuB-3-1 Growth of GaAsSb/InP Heterostructures by OMVPEJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 108
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Growth of GaAsSb/InP heterostructures by OMVPEWatkins, S.P. / Bolognesi, C.R. / Thewalt, M.L.W. / Kavanagh, K.L. / Xu, X.G. / Matine, N. / Wang, C.X. / Liu, J. / Zhang, X. / Pitts, O.J. et al. | 2004
- 114
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An InP/InGaAs tunnel junction fabricated on (311)B InP substrate by MOCVDOkuno, Y.L. / DenBaars, S.P. / Bowers, J.E. et al. | 2004
- 114
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TuB-3-2 An InP/InGaAs Tunnel Junction Fabricated on (311)B InP Substrate by MOCVDJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 118
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TuB-3-3 Buffer Optimization for InP-on-Si (001) Quasi-SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 118
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Buffer optimization for InP-on-Si [001] quasi-substratesKhorenko, V. / Mofor, A.C. / Bakin, A. / Neumann, S. / Guttzeit, A. / Wehmann, H.-H. / Prost, W. / Schlachetzki, A. / Tegude, F.-J. et al. | 2004
- 122
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Planarized selective regrowth of InP:Fe by LP-MOVPE using tertiarybutylchloride for high-speed modulator devicesParaskevopoulos, A. / Franke, D. / Harde, P. / Gouraud, S. / Le Pallec, M. / Lelarge, F. / Decobert, J. et al. | 2004
- 122
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TuB-3-4 Planarized Selective Regrowth of InP:Fe by LP-MOVPE Using Tertiarybutylchloride for High-Speed Modulator DevicesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 126
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Cleaning of residual silicon on InP regrowth interface in MOVPE reactorNaniwae, K. / Ohya, M. / Hamamoto, K. / Nishi, K. / Sasaki, T. et al. | 2004
- 126
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TuB-3-5 Cleaning of Residual Silicon on InP Regrowth Interface in MOVPE ReactorJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 130
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Influence of moderate temperature annealing on surface fermi level in p-type InP: X-ray photoemission studySakai, M. / Shibata, D. / Takakuwa, A. / Saito, Y. et al. | 2004
- 130
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TP-1 Influence of Moderate Temperature Annealing on Surface Fermi Level in P-Type InP: X-Ray Photoemission StudyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 134
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Two-photon absorption in InP substrates in the 1.55 /spl mu/m rangeVignaud, D. / Lampin, J.F. / Mollot, F. et al. | 2004
- 134
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TP-2 Two-Photon Absorption in InP Substrates in the 1.55 mum RangeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 138
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An empirical modeling for refractive indices of InP-based quaternary compounds at photon energy near and above the bandgapLay, T.S. / Lin, E.Y. / Chang, T.Y. et al. | 2004
- 138
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TP-3 An Empirical Modeling for Refractive Indices of InP-Based Quaternary Compounds at Photon Energy near and above the BandgapJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 142
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Selective area growth of AlGaInAs for spot-size converter integrated laser diodeBang, Y.C. / Kim, H.S. / Kim, J.-Y. / Lee, E.H. / Lee, J.K. / Kim, T.I. et al. | 2004
- 142
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TP-4 Selective Area Growth of AlGaInAs for Spot-Size Converter Integrated Laser DiodeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 146
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Characterization of mosaic structures in metamorphic InP layers grown in GaAs substrate by solid source molecular beam epitaxyYuan, K. / Radhakrishnan, K. / Wang, H. et al. | 2004
- 146
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TP-5 Characterization of Mosaic Structures in Metamorphic InP Layers Grown on GaAs Substrate by Solid Source Molecular Beam EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 150
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TMI transport studies: effect of different bubbler designsOdedra, R. / Kingsley, A.J. / Leese, T. / Purdie, A. / Coward, K.M. / Smith, L.M. / Rushworth, S.A. / Williams, G. / Kanjolia, R.K. et al. | 2004
- 150
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TP-6 TMI Transport Studies: Effect of Difference Bubbler DesignsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 153
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TP-7 Yield Improvement for Laser Grown on Indium Phosphide Using TBP in the Multiwafer Planetary ReactorJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 153
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Yield improvement for laser grown on indium phosphide using TBP in the multiwafer planetary reactorSchmitt, T. / Deufel, M. / Schmitz, D. et al. | 2004
- 155
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TP-8 Effect of the Characteristics of InP Substrates on Photoluminescence Spectra of InP Based Epitaxial Layers and Surface Temperature during Epitaxial GrowthJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 159
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TP-9 Characterization of As-P Interface-Sensitive GaInP/GaAs Structure Grown in a Production MBE SystemJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 159
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Characterization of As-P interface-sensitive GaInP/GaAs structures grown in a production MBE systemDhellemmes, S. / Godey, S. / Wilk, A. / Wallart, X. / Mollot, F. et al. | 2004
- 163
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TP-10 Damage Evaluation of Inductive Coupling Plasma Etching of InGaAsP/InP Single Quantum WellJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 163
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Damage evaluation of inductive coupling plasma etching of InGaAsP-InP single quantum wellSaga, N. / Kawahara, T. / Kishi, T. / Murata, M. et al. | 2004
- 167
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TP-11 Fabrication of Large-Area and Very Uniform Two-dimensional Sub-micron Periodic Patterns on 1500nm Range Multi-Quantum Well Structures Using Two-Time Laser HolographyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 167
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Fabrication of large-area and very uniform two-dimensional sub-micron periodic patterns on 1500 nm range multi-quantum well structures using two-time laser holographyNakaoka, H. / Murakami, S. / Nakano, T. / Honma, K. / Utaka, K. / Nakao, M. et al. | 2004
- 171
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TP-12 Mechanical Stress Caused by Adsorption of O or N on a Ga-Terminated (100) GaAs Surface: O Gives Compressive Stress but N Don'tJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 171
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Mechanical stress caused by adsorption of O or N on a Ga-terminated (100) GaAs surface: O gives compressive stress but N don'tSeto, H. / Miyamura, S. / Inokuma, T. / Iiyama, K. / Takamiya, S. et al. | 2004
- 175
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TP-13 Process Optimization for Dry Etching of InP/InGaAsP-Based Photonic Crystals with a Cl~2/CH~4/H~2 Mixture on an ICP-RIEJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 175
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Process optimization for dry etching of InP-InGaAsP-based photonic crystals with a Cl/sub 2//CH/sub 4//H/sub 2/ mixture on an ICP-RIEStrasser, P. / Wuest, R. / Robin, F. / Erni, D. / Jackel, H. et al. | 2004
- 179
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TP-14 InP Hot Electron Transistors with Reduced Emitter Width for Controllability of Collector Current by Gate BiasJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 179
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InP hot electron transistors with reduced emitter width for controllability of collector current by gate biasNakagawa, R. / Takeuchi, K. / Yamada, Y. / Miyamoto, Y. / Furuya, K. et al. | 2004
- 183
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Integration of a novel, high quality Si/sub 3/N/sub 4/ metal insulator metal (MIM) capacitors deposited by (ICP-CVD) at room temperature with 50 nm T-gate InP-HEMTs to realise monolithic millimetre-wave integrated circuits (MMMICs)Elgaid, K. / McLelland, H. / Cao, X. / Thayne, I.G. et al. | 2004
- 183
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TP-15 Integration of a Novel, High Quality Si~3N~4 Metal Insulator Metal (MIM) Capacitors Deposited by (ICP-CVD) at Room Temperature with 50nm T-Gate InP-HEMTs to Realise Monolithic Millimetre-Wave Integrated Circuits (MMMICs)Japan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 187
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TP-16 Improved Transconductance N-Channel Enhancement/Inversion Mode GaAs-MISFETs with Gate Insulating Layers Formed by Dry Oxi-NitridationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 187
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Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridationTametou, M. / Takebe, M. / Nakamura, K. / Paul, N.C. / Iiyama, K. / Takamiya, S. et al. | 2004
- 191
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Depletion/enhancement mode InAlAs/InGaAs-MOSHEMTs with nm-thin gate insulating layers formed by oxidation of the InAlAs layerNakamura, K. / Paul, N.C. / Takebe, M. / Iiyama, K. / Takamiya, S. et al. | 2004
- 191
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TP-17 Depletion/Enhancement Mode InAlAs/InGaAs - MOSHEMTs with nm - Thin Gate Insulating Layers Formed by Oxidation of the InAlAs LayerJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 195
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On the surface stability of UV-cured InP-InGaAs HBTs using polyimide for passivationChai Wah Ng, / Hong Wang, et al. | 2004
- 195
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TP-18 On the Surface Stability of UV-Cured InP/InGaAs HBTs Using Polyimide for PassivationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 198
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TP-19 Investigation of Enhancement-Mode Metamorphic InAlAs/InGaAs HEMTs by Schottky Metal DiffusionJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 198
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Investigation of enhancement-mode metamorphic InAlAs/InGaAs HEMTs by Schottky metal diffusionCheng-Kuo Lin, / Jing-Chang Wu, / Wen-Kai Wang, / Yi-Jen Chan, et al. | 2004
- 202
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TP-20 Improved Power Performance of InGaP/GaAs HBT with Composite CollectorJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 202
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Improved power performance of InGaP-GaAs HBT with composite collectorYue-ming Hsin, / Chia-Yen Chang, / Chang-Chung Fan, / Che-ming Wang, / Hsu, H.T. et al. | 2004
- 205
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Characteristics of In/sub x/Al/sub 1-x/As/In/sub x/Ga/sub 1-x/As (x=50%, 60%) metamorphic HEMTs on GaAs substratesCheng-Kuo Lin, / Jing-Chang Wu, / Wen-Kai Wang, / Yi-Jen Chan, et al. | 2004
- 205
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TP-21 Characteristics of In~xAl~1~-~xAs/In~xGa~1~-~x As (x=50%, 60%) Metamorphic HEMTs on GaAs SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 209
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TP-22 Observation of Multiple Negative Differential Resistance in InP/InGaAs Superlattice-Emitter Resonant Tunneling Bipolar TransistorJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 209
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Observation of multiple negative differential resistance in InP-InGaAs superlattice-emitter resonant tunneling bipolar transistorJung-Hui Tsai, / King-Poul Zhu, / Shih-Wei Tan, / Wen Shiung Lour, et al. | 2004
- 213
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Investigation of drain current transient in InP-based high electron mobility transistors (HEMTs)Chee-Leong Tan, / Hong Wang, / Radhakrishnan, K. / Wai-Chye Cheong, / Jing Bu, et al. | 2004
- 213
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TP-23 Investigation of Drain Current Transient in InP-Based High Electron Mobility Transistors (HEMTs)Japan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 215
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TP-24 Design and Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode (APD) Based on the Non-Local ModelJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 215
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Design and fabrication of a 10 Gb/s InGaAs/InP avalanche photodiode (APD) based on the non-local modelSungmin Hwang, / Jongin Shim, / Yungseon Eo, / Seunkee Yang, / Hwayong Kang, / Byoungok Jun, / Doyong Lee, / Donghoon Jang, et al. | 2004
- 219
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Effects of forward bias conditions on electroluminescence efficiency in blue and green InGaN single-quantum-well diodesHori, A. / Yasunaga, D. / Fujiwara, K. et al. | 2004
- 219
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TP-25 Effects of Forward Bias Conditions on Electroluminescence Efficiency in Blue and Green InGaN Single-Quantum-Well DiodesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 221
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TP-26 Fabrication of Ultra-Thin InP Membranes and Their Application for High Reflective Mirrors in Tunable Vertical-Cavity DevicesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 221
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Fabrication of ultra-thin InP membranes and their application for high reflective mirrors in tunable vertical-cavity devicesStrassner, M. / Leclercq, J.-L. / Sagnes, I. et al. | 2004
- 224
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1.3-/spl mu/m spot size converter integrated laser diode with conventional buried-heterostructure laser processJae-Sik Sim, / Ki-Soo Kim, / Dong-Hun Lee, / Yong-Soon Baek, et al. | 2004
- 224
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TP-27 1.3um Spot Size Converter Integrated Laser Diode with Conventional Buried-Heterostructure Laser ProcessJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 228
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The effects of semi-insulating current blocking layers on static and dynamic characteristics in direct-modulated semiconductor lasersDongchurl Kim, / Jongin Shim, / Yungseon Eo, / Joongkoo Kang, / Munkyu Park, / Donghoon Jang, et al. | 2004
- 228
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TP-28 The Effects of Semi-Insulating Current Blocking Layers on Static and Dynamic Characteristics in Direct-Modulated Semiconductor LasersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 232
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TP-29 Fabrication of InGaAsP/InP Coupled Waveguides Loaded with Long-Period Grating for Gain Equalizing DeviceJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 232
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Fabrication of InGaAsP-InP coupled waveguides loaded with long-period grating for gain equalizing deviceOishi, J. / Abe, T. / Tabuchi, H. / Utaka, K. et al. | 2004
- 236
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TP-30 Integrated DFB Laser Electro-Absorption Modulator Based on Identical MQW-Double Stack Active Layer for High-Speed Modulation beyond 10 Gbit/sJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 236
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Integrated DFB laser electro-absorption modulator based on identical MQW-double stack active layer for high-speed modulation beyond 10 Gbit/sSaravanan, B.K. / Gerlach, P. / Peschke, M. / Knoedl, T. / Schreiner, R. / Hanke, C. / Stegmueller, B. et al. | 2004
- 239
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Fabrication of tunable sampled grating DBR-LD using integrated optical semiconductor amplifier with a lateral tapered waveguideSu Hwan Oh, / Ji-Myon Lee, / Ki Soo Kim, / Hyunsung Ko, / Chul-Wook Lee, / Sahnggi Park, / Moon-Ho Park, et al. | 2004
- 239
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TP-31 Fabrication of Tunable Sampled Grating DBR-LD Using Integrated Optical Semiconductor Amplifier with a Lateral Tapered WaveguideJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 241
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TP-32 Experimental Demonstration of 10G Bit/s Wavelength Conversion Based on Cross Gain Modulation in Cascaded Semiconductor Optical AmplifiersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 241
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Experimental demonstration of Gbit/s wavelength conversion based on cross gain modulation in cascaded semiconductor optical amplifiersYazaki, T. / Inohara, R. / Nishimura, K. / Usami, M. et al. | 2004
- 245
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TP-33 Fabrication of Mesa-type InGaAs pin PDs with InP Passivation Structure on 4-inch Diameter InP SubstrateJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 245
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Fabrication of mesa-type InGaAs pin PDs with InP passivation structure on 4-inch diameter InP substrateYamabi, R. / Tsuji, Y. / Hiratsuka, K. / Yano, H. et al. | 2004
- 249
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Operation of a novel nanoscale unipolar rectifying diodeMateos, J. / Vasallo, B.G. / Pardo, D. / Gonzalez, T. / Song, A.M. et al. | 2004
- 249
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TP-34 Operation of a Novel Nanoscale Unipolar Rectifying DiodeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 253
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Strain distribution and band structure of mass-transported InAsP quantum wires buried in InGaAsP/InPOhtsuka, T. / Nakano, Y. et al. | 2004
- 253
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TP-35 Strain Distribution and Band Structure of Mass-Transported InAsP Quantum Wires Buried in InGaAsP/InPJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 257
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Competitive capture of photoexcited carriers in a novel step-graded In/sub x/(Al/sub 0.17/Ga/sub 0.83/)/sub 1-x/As quantum well heterostructureTadakuma, T. / Machida, S. / Satake, A. / Fujiwara, K. / Folkenberg, J.R. / Hvam, J.M. et al. | 2004
- 257
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TP-36 Competitive Capture of Photoexcited Carriers in a Novel Step-Graded In~X(Al~0~.~1~7Ga~0~.~8~3)~1~-~XAs Quantum Well HeterostructureJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 261
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TP-37 Selective Formation of InAs Quantum Dot Arrays by Direct Deposition of Indium Nano-Dots Using a Nano-Jet ProbeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 261
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Selective formation of InAs quantum dot arrays by direct deposition of indium nano-dots using a nano-jet probeOhkouchi, S. / Nakamura, Y. / Nakamura, H. / Asakawa, K. et al. | 2004
- 265
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TP-38 Fabrication and Characterization of GaInP/GaAs Triple Barrier Resonant Tunneling Diodes with Pd/GaAs Schottky CollectorJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 265
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Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes with Pd/GaAs Schottky collectorFukumitsu, M. / Asaoka, N. / Suhara, M. / Okumura, T. et al. | 2004
- 268
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TP-39 Observation of Ultra-Low Frequency Photocurrent Self-Oscillation in In~XGa~1~-~XAs Quantum WellsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 268
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Observation of ultra-low frequency photocurrent self-oscillation in InxGa1-xAs quantum wellsTanigawa, K. / Kimura, T. / Satake, A. / Fujiwara, K. / Sano, N. et al. | 2004
- 268
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Observation of ultra-low frequency photocurrent self-oscillation in In/sub x/Ga/sub 1-x/As quantum wellsTanigawa, K. / Kimura T, / Satake, A. / Fujiwara, K. / Sano, N. et al. | 2004
- 272
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Optical properties of InAs quantum dots with InAlAs/InGaAs composite matrixWei-Sheng Liu, / Jen-Inn Chyi, et al. | 2004
- 272
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TP-40 Optical Properties of InAs Quantum Dots with InAIAs/InGaAs Composite MatrixJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 276
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TP-41 Structural and Electrical Investigation of High Temperature Fe Implanted GaInP Layers Lattice Matched to GaAsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 276
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Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAsCesca, T. / Gasparotto, A. / Verna, A. / Fraboni, B. / Priolo, F. / Tarricone, L. / Rampino, S. / Longo, M. et al. | 2004
- 278
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Photocurrent and differential absorption spectra of InGaAsN single- and double-quantum-well structures grown by molecular beam epitaxyLay, T.S. / Shen, R.R. / Lin, E.Y. / Kong, K.M. / Chen, L.R. / Wang, J.S. / Lin, G. / Chi, J.Y. et al. | 2004
- 278
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TP-42 Photocurrent and Differential Absorption Spectra of InGaAsN Single- and Double-Quantum-Well Structures Grown by Molecular Beam EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 281
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Table of contents| 2004
- 283
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WA-1-1 Metamorphic HEMT and Its ApplicationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 283
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Metamorphic HEMT and its applicationDer-Wei Tu, et al. | 2004
- 284
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High performance millimeter wave 0.1 /spl mu/m InP HEMT MMIC LNAs fabricated on 100 mm wafersGrundbacher, R. / Uyeda, J. / Lai, R. / Umemoto, D. / Liu, P.H. / Barsky, M. / Cavus, A. / Lee, L.J. / Chen, J. / Gonzalez, J. et al. | 2004
- 284
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WA-1-2 High Performance Millimeter Wave 0.1 mum InP HEMT MMIC LNAs Fabricated on 100 mm WafersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 288
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WA-1-3 High-Frequency Characteristics and Saturation Electron Velocity of InAlAs/InGaAs Metamorphic High Electron Mobility Transistors at High TemperaturesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 288
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High-frequency characteristics and saturation electron velocity of InAlAs/InGaAs metamorphic high electron mobility transistors at high temperaturesOno, H. / Taniguchi, S. / Suzuki, T. et al. | 2004
- 292
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High performance 50 nm T-Gate In/sub 0.52/Al/sub 0.48/As/In/sub 0.70/Ga/sub 0.30/As pseudomorphic high electron mobility transistorsXin Cao, / Thorns, S. / McLelland, H. / Elgaid, K. / Stanley, C. / Thayne, I. et al. | 2004
- 292
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WA-1-4 High Performance 50nm T-Gate In~0~.~5~2A1~0~.~4~8As/In~0~.~7~0Ga~0~.~3~0As Pseudomorphic High Electron Mobility TransistorsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 295
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InAlAs/InGaAs double-gate HEMTs with high extrinsic transconductanceWichmann, N. / Duszynski, I. / Bollaert, S. / Wallart, X. / Cappy, A. et al. | 2004
- 295
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WA-1-5 InAlAs/InGaAs Double-Gate HEMTs with High Extrinsic TransconductanceJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 299
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Surface operation photonic devices based on two dimensional InP membrane photonic crystalsLetartre, X. / Mouette, J. / Hattori, H. / Seassal, C. / Leclercq, J.L. / Rojo-Romeo, P. / Viktorovitch, P. et al. | 2004
- 299
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WB-1-1 Surface Operation Photonic Devices Based on Two Dimensional InP Membrane Photonic CrystalsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 305
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WB-1-2 Integration of Photonic Crystal Based Tunable Lasers, Waveguides and Y-CouplersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 305
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Integration of photonic crystal based tunable lasers, waveguides and Y-couplersKamp, M. / Mahnkopf, S. / Forchel, A. et al. | 2004
- 307
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Fabrication and characterization of high-uniformity and high-accuracy two-dimensional photonic-crystal slab waveguides on GaAs membranes involving InAs quantum dotsIkeda, N. / Sugimoto, Y. / Tanaka, Y. / Nakamura, Y. / Ohkouchi, S. / Inoue, K. / Asakawa, K. et al. | 2004
- 307
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WB-1-3 Fabrication and Characterization of High-Uniformity and High-Accuracy Two-Dimensional Photonic-Crystal Slab Waveguides on GaAs Membranes Involving InAs Quantum DotsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 311
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Towards realization of high quality 2D-photonic crystals in InP/GalnAsP/InPAnand, S. / Mulot, M. / Berrier, A. / Ferrini, R. / Houdre, R. / Kamp, M. / Forchel, A. et al. | 2004
- 311
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WB-1-4 Towards Realization of High Quality 2D-Photonic Crystals in InP/GaInAsP/InPJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 314
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Electrical properties of orientation-mismatched interface of (311)B InP/(100) GaAs, and the effect of surface preparation methodsOkuno, Y.L. / Bowers, J.E. et al. | 2004
- 314
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WB-1-5 Electrical Properties of Orientation-Mismatched Interface of (311)B InP/(100) GaAs, and the Effect of Surface Preparation MethodsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 318
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Electric field effect for eigen states in In/sub 0.53/Ga/sub 0.47/As/In/sub 0.52/Al/sub 0.48/As multi-quantum wells using photocurrent spectroscopyTanaka, K. / Kotera, N. / Nakamura, H. et al. | 2004
- 318
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WP-1 Electric Field Effect for Eigen States in In~0~.~5~3Ga~0~.~4~7As/In~0~.~5~2Al~0~.~4~8As Multi-Quantum Wells Using Photocurrent SpectroscopyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 322
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WP-2 Influence of ICP Etching on Surface Morphology of InP SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 322
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Influence of ICP etching on surface morphology of InP substratesKarouta, F. / Geluk, E.J. / van der Heijden, R.W. / Silov, A.Yu. / Eijkemans, T. / van der Tol, J.J.G.M. / Smit, M.K. / Salemink, H.W.M. et al. | 2004
- 326
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Indium phosphide crystal growth from phosphorus-rich meltNiefeng Sun, / Luhong Mao, / Xiaolong Zhou, / Xiawan Wu, / Weilian Guo, / Ming Hu, / Lingxia Li, / Mi Xiao, / Bin Liao, / Guangyao Yang, et al. | 2004
- 326
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WP-3 Indium Phosphide Crystal Growth from Phosphorus-Rich MeltJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 330
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Optical and lasing characteristics of 1.55 /spl mu/m InGaAs/InGaAsP/InP quantum dots grown by MOCVDPyun, S.H. / Lee, S.H. / Lee, I.C. / Jeong, W.G. / Jang, J.W. / Kim, N.J. / Hwang, M.S. / Lee, D. / Lee, J.H. / Oh, D.G. et al. | 2004
- 330
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WP-4 Optical and Lasing Characteristics of 1.55 mum InGaAs/InGaAsP/InP Quantum Dots Grown by MOCVDJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 330
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Optical and lasing characteristics of 1.55 mu m InGaAs/InGaAsP/InP quantum dots grown by MOCVDPyun, S.H. / Lee, S.H. / Lee, I.C. / Jeong, W.G. / Jang, J.W. / Kim, N.J. / Hwang, M.S. / Lee, D. / Lee, J.H. / Oh, D.G. et al. | 2004
- 334
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WP-5 Sulfur Doped Indium Phosphide on Silicon Substrate Grown by Epitaxial Lateral OvergrowthJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 334
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Sulfur doped indium phosphide on silicon substrate grown by epitaxial lateral overgrowthSun, Y.T. / Lourdudoss, S. et al. | 2004
- 338
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GaAsSb-based HBTs grown by production MBE systemZhu, H.J. / Kuo, J.M. / Pinsukanjana, P. / Jin, X.J. / Vargason, K. / Herrera, M. / Ontiveros, D. / Boehme, C. / Kao, Y.C. et al. | 2004
- 338
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WP-6 GaAsSb-Based HBTs Grown by Production MBE SystemJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 342
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Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasersAidam, R. / Losch, R. / Walther, M. / Driad, R. / Kallenbach, S. et al. | 2004
- 342
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WP-7 Multiwafer Solid Source Phosphorus MBE on InP for DHBTs and Aluminum Free LasersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 346
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WP-8 Strain Relaxation and Dislocation Filtering in Metamorphic HBT and HEMT Structures Grown on GaAs Substrates by MBEJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 346
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Strain relaxation and dislocation filtering in metamorphic HBT and HEMT structures grown on GaAs substrates by MBEFastenau, J.M. / Lubyshev, D. / Fang, X.-M. / Doss, C. / Wu, Y. / Liu, W.K. / Bals, S. / Griffith, Z. / Kim, Y.-M. / Rodwell, M.J.W. et al. | 2004
- 350
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WP-9 Control of Group-III Atoms Distribution in Thin Quantum Wells Analyzed by X-ray CTR Scattering MeasurementJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 350
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Control of group-III atoms distribution in thin quantum wells analyzed by X-ray CTR scattering measurementTabuchi, M. / Yamada, H. / Hisadome, S. / Oga, R. / Takeda, Y. et al. | 2004
- 354
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Passivation study for In/sub 0.4/AlAs/In/sub 0.65/GaAs HEMTs by UHV RPECVD grown SiN/sub x/ dielectrics and their impact on I-V kink and low-frequency dispersion phenomenaDae-Hyun Kim, / Hun-Hee Noh, / Sung-Sun Choi, / Jae-Hak Lee, / Kwang-Seok Seo, et al. | 2004
- 354
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WP-10 Passivation Study for In~0~.~4AlAs/In~0~.~6~5GaAs HEMTs by UHV RPECVD Grown SiN~x Dielectrics and Their Impact on I-V Kink & Low-Frequency Dispersion PhenomenaJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 358
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WP-12 Processing Issues for Wafer Bonded III-V on Insulator StructuresJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 358
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Processing issues for wafer bonded III-V on insulator structuresHayashi, S. / Goorsky, M.S. / Sandhu, R. / Wojtowicz, M. et al. | 2004
- 362
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Electrical isolation of MQW InGaAsP/InP structures by MeV iron ion implantation for vertical PIN modulators and photodiodesKong, S.F. / Pantouvaki, M. / Liu, C.P. / Seeds, A.J. / Too, P. / Ahmed, S. / Gwilliam, R. / Roberts, J.S. et al. | 2004
- 362
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WP-14 Electrical Isolation of MQW InGaAsP/InP Structures by MeV Iron Ion Implantation for Vertical Pin Modulators and PhotodiodesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 366
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Current density limits in InP DHBTs: collector current spreading and effective electron velocityDahlstrom, M. / Rodwell, M.J.W. et al. | 2004
- 366
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WP-15 Current Density Limits in InP DHBTs: Collector Current Spreading and Effective Electron VelocityJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 370
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Low-frequency transconductance dispersion characteristics of 0.13/spl mu/m In/sub 0.65/GaAs p-HEMTs with side-recessed InAlAs and InP surfaceTae-Woo Kim, / Dae-Hyun Kim, / In-Ho Kang, / Jeong-Hoon Kim, / Kwang-Seok Seo, / Jong-In Song, et al. | 2004
- 370
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WP-16 Low-Frequency Transconductance Dispersion Characteristics of 0.13mum In~0~.~6~5GaAs p-HEMTs with Side-Recessed InAlAs and InP SurfaceJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 374
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WP-17 High Performance of 0.15mum Quasi Enhancement-Mode (E-Mode) In~0~.~4GaAs/In~0~.~4AlAs Metamorphic HEMT's on GaAs Substrate Using New Triple-Gate TechnologyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 374
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High performance of 0.15/spl mu/m quasi enhancement-mode (E-mode) In/sub 0.4/GaAs/In/sub 0.4/AlAs metamorphic HEMTs on GaAs substrate using new triple-gate technologyDae-Hyun Kim, / Hun-Hee Noh, / Suk-Jin Kim, / Jae-Hak Lee, / Ki-Woong Chung, / Kwang-Seok Seo, et al. | 2004
- 378
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Transition from ballistic to ohmic transport in T-Branch junctions at room temperature in GalnAs/AlInAs heterostructuresGalloo, J.S. / Pichonat, E. / Roelens, Y. / Bollaert, S. / Wallart, X. / Cappy, A. / Mateos, J. / Gonzales, T. et al. | 2004
- 378
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WP-18 Transition from Ballistic to Ohmic Transport in T-Branch Junctions at Room Temperature in GaInAs/AlInAs HeterostructuresJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 382
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Novel C-band and K-band 3-D InGaP/InGaAs MMICs using low-k BCB interlayerHsien-Chin Chiu, / Shih-Cheng Yang, / Cheng-Kuo Lin, / Ming-Jyh Hwu, / Yi-Jen Chan, et al. | 2004
- 382
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WP-19 Novel C-Band and K-Band 3-D InGaP/InGaAs MMICs Using Low-k BCB InterlayerJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 386
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WP-20 A 50-nm Gate Length InP Pseudomorphic HEMT Implemented in an MMIC Broadband Feedback AmplifierJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 386
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A 50-nm gate length InP pseudomorphic HEMT implemented in an MMIC broadband feedback amplifierMalmkvist, M. / Mellberg, A. / Grahn, J. / Rorsman, N. / Zirath, H. et al. | 2004
- 389
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WP-21 Tradeoff of DC/RF Performance Versus Reliability in 0.1 mum InP HEMTsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 389
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Tradeoff of DC/RF performance versus reliability in 0.1 /spl mu/m InP HEMTsChou, Y.C. / Grundbacher, R. / Leung, D. / Lai, R. / Eng, D. / Liu, P.H. / Block, T. / Oki, A. et al. | 2004
- 393
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WP-22 The De-Bias Effect of Gate Current in InP HEMT MMICsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 393
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The de-bias effect of gate current in InP HEMT MMICsChou, Y.C. / Truong, M. / Leung, D. / Grundbacher, R. / Lai, R. / Eng, D. / Block, T. / Oki, A. et al. | 2004
- 397
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WP-23 Device Stability of Metamorphic InP/InGaAs Heterojunction Bipolar Transistors by Optical and Electrical CharacterizationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 397
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Device stability of metamorphic InP/InGaAs heterojunction bipolar transistors by optical and electrical characterizationHong Yang, / Hong Wang, / Radhakrishnan, K. et al. | 2004
- 400
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WP-24 Improved Bipolar Cascade Laser Characteristics by Optimization of InP Electron Stopper LayersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 400
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Improved bipolar cascade laser characteristics by optimization of InP electron stopper layersDross, F. / van Dijk, F. / Vinter, B. et al. | 2004
- 403
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Monolithic integration of InGaAs/InAlGaAs-based semiconductor optical amplifiers and 10 Gb/s broadband electro-absorption modulators using quantum well intermixing technologyMcDougall, S.D. / Qiu, B.C. / Ternent, G. / Yanson, D.A. / Loyo-Maldonado, V. / Kowalski, O.P. / Marsh, J.H. et al. | 2004
- 403
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WP-25 Monolithic Integration of InGaAs/InAlGaAs-Based Semiconductor Optical Amplifiers and 10 Gb/s Broadband Electro-Absorption Modulators Using Quantum Well Intermixing TechnologyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 407
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WP-26 Electrostatic Discharge Induced Degradation of GaInAsP/InP Laser Diodes Caused by Argon Ion Irradiation in Facet CoatingJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 407
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Electrostatic discharge induced degradation of GaInAsP/InP laser diodes caused by argon ion irradiation in facet coatingIchikawa, H. / Ito, M. / Hamada, K. / Yamaguchi, A. / Nakabayashi, T. et al. | 2004
- 411
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WP-27 Control Pulse Propagation Direction Dependence of Cross-Gain and Cross-Phase Modulation Induced in Semiconductor Optical AmplifierJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 411
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Control pulse propagation direction dependence of cross-gain and cross-phase modulation induced in semiconductor optical amplifierNishimura, K. / Asai, T. / Yazaki, T. / Inohara, R. / Usami, M. et al. | 2004
- 415
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1.3-1.55 /spl mu/m light emission from InGaAs/GaAs quantum wells on GaAs using dipole /spl delta/-dopingWang, S.M. / Zhao, Q.X. / Wang, X.D. / Wei, Y.Q. / Sadeghi, M. / Larsson, A. et al. | 2004
- 415
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WP-28 1.3-1.55 mum Light Emission from InGaAs/GaAs Quantum Wells on GaAs Using Dipole delta-DopingJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 415
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1.3-1.55 mu m light emission from InGaAs/GaAs quantum wells on GaAs using dipole delta -dopingWang, S.M. / Zhao, Q.X. / Wang, X.D. / Wei, Y.Q. / Sadeghi, M. / Larsson, A. et al. | 2004
- 418
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WP-29 Design Optimization of InGaAsP-InGaAlAs 1.55 mum Strain-Compensated MQW Lasers for Direct Modulation ApplicationsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 418
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Design optimization of InGaAsP-InGaAlAs 1.55 /spl mu/m strain-compensated MQW lasers for direct modulation applicationsNadeem Akram, M. / Silfvenius, C. / Berggren, J. / Kjebon, O. / Schatz, R. et al. | 2004
- 418
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Design optimization of InGaAsP-InGaAlAs 1.55 mu m strain-compensated MQW lasers for direct modulation applicationsNadeem Akram, M. / Silfvenius, C. / Berggren, J. / Kjebon, O. / Schatz, R. et al. | 2004
- 422
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WP-30 High Frequency Performance of 3-Quantum Well GaInNAs/GaAs Ridge Waveguide Lasers Emitting at 1.35 MicronJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 422
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High frequency performance of 3-quantum well GaInNAs/GaAs ridge waveguide lasers emitting at 1.35 micronMartinez, A. / Sallet, V. / Jahan, D. / Provost, J.-G. / Dagens, B. / Ferlazzo, L. / Harmand, J.-C. / Ramdane, A. et al. | 2004
- 425
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WP-31 Low Power Thermo-Optic Tuning of Vertically Coupled InP Microring ResonatorsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 425
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Low power thermo-optic tuning of vertically coupled InP microring resonatorsChristiaens, U. / Van Thourhout, D. / Baets, R. et al. | 2004
- 428
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WP-32 Wavelength Extension of Highly-Strained InGaAs/GaAs Quantum Well Laser Diodes by Dipole delta-DopingJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 428
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Wavelength extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole /spl delta/-dopingWang, X.D. / Wang, S.M. / Wei, Y.Q. / Zhao, Q.X. / Sadeghi, M. / Larsson, A. et al. | 2004
- 428
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Wavelength extension of highly-strained InGaAs/GaAs quantum well laser diodes by dipole delta -dopingWang, X.D. / Wang, S.M. / Wei, Y.Q. / Zhao, Q.X. / Sadeghi, M. / Larsson, A. et al. | 2004
- 431
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Static characteristics of an InAlGaAs quantum well monolithically integrated DBR laser and electroabsorption modulator fabricated by quantum well intermixingRobert, F. / Brycc, A.C. / Marsh, J.H. / SpringThorpe, A.J. / White, J.K. et al. | 2004
- 431
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WP-33 Static Characteristics of an InAlGaAs Quantum Well Monolithically Integrated DBR Laser and Electroabsorption Modulator Fabricated by Quantum Well IntermixingJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 435
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WP-34 A Nanoparticle-Coated Nanocrystal-Gate for an InP-Based Heterostructure Field-Effect TransistorJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 435
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A nanoparticle-coated nanocrystal-gate for an InP-based heterostructure field-effect transistorDo, Q.-T. / Khorenko, V. / Prost, W. / Tegude, F.J. / Katzer, K. / Mertin, W. / Moore, B. / Martinez-Albertos, J.-L. et al. | 2004
- 439
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WP-35 Proposal of a Semiconductor Klystron Device for THz Range Using Two-Dimensional Electron GasJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 439
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Proposal of a semiconductor klystron device for THz range using two-dimensional electron gasAsada, M. / Imai, H. / Kamata, H. et al. | 2004
- 443
-
Feasibility of realizing quantum dots sensitive to TM mode lights with wavelength of 1.5 /spl mu/mEbe, H. / Nakata, Y. / Sugawara, M. / Arakawa, Y. et al. | 2004
- 443
-
Feasibility of realizing quantum dots sensitive to TM mode lights with wavelength of 1.5 mu mEbe, H. / Nakata, Y. / Sugawara, M. / Arakawa, Y. et al. | 2004
- 443
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WP-36 Feasibility of Realizing Quantum Dots Sensitive to TM Mode Lights with Wavelength of 1.5 mumJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 447
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2D AlGaAs/AlOx photonic crystal high-Q resonator around 1.5 /spl mu/mRaineri, F. / Sagnes, I. / Cojocaru, C. / Varoutsis, S. / Strassner, M. / Le Gratiet, L. / Meriadec, C. / Monnier, P. / Raj, R. / Levenson, A. et al. | 2004
- 447
-
2D AlGaAs/AlOx photonic crystal high-Q resonator around 1.5 mu mRaineri, F. / Sagnes, I. / Cojocaru, C. / Varoutsis, S. / Strassner, M. / Le Gratiet, L. / Meriadec, C. / Monnier, P. / Raj, R. / Levenson, A. et al. | 2004
- 447
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WP-37 2D AlGaAs/AlOx Photonic Crystal High-Q Resonator around 1.5mumJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 450
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WP-38 Evolution of Cross-Sectional Structures during Selective MBE Growth of InGaAs Hexagonal Nanowire Networks on InP(001) and (111)B SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 450
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Evolution of cross-sectional structures during selective MBE growth of InGaAs hexagonal nanowire networks on InP [001] and (111)B substratesFukushi, T. / Muranaka, T. / Kimura, T. / Hasegawa, H. et al. | 2004
- 454
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Molecular beam epitaxy of self-assembled GaSb-based quantum dot structures for the control of photoluminescence wavelengths towards 1.3 mu m rangeJiang, Chao / Kobayashi, S. / Sakaki, H. et al. | 2004
- 454
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WP-39 Molecular Beam Epitaxy of Self-Assembled GaSb-Based Quantum Dot Structures for the Control of Photoluminescence Wavelengths towards 1.3 mum RangeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 454
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Molecular beam epitaxy of self-assembled GaSb-based quantum dot structures for the control of photoluminescence wavelengths towards 1.3 /spl mu/m rangeChao Jiang, / Kobayashi, S. / Sakaki, H. et al. | 2004
- 458
-
Selective growth of self-assembled InAs quantum dots with the in-situ maskNakamura, Y. / Ohkouchi, S. / Nakamura, H. / Asakawa, K. et al. | 2004
- 458
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WP-40 Selective Growth of Self-Assembled InAs Quantum Dots with the In-Situ MaskJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 461
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InAs/InGaAs quantum dot laser with high ground-state modal gain grown by solid-source molecular-beam epitaxyFu-Yu Chang, / Chi-Sen Lee, / Gang-Hua Liao, / Hao-Hsiung Lin, et al. | 2004
- 461
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WP-41 InAs/InGaAs Quantum Dot Laser with High Ground-State Modal Gain Grown by Solid-Source Molecular-Beam EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 465
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Reduced temperature dependence of refractive index in TlInGaAs addition of TlImada, A. / Mukai, T. / Fujiwara, A. / Lee, H.-J. / Hasegawa, S. / Asahi, H. et al. | 2004
- 465
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WP-42 Reduced Temperature Dependence of Refractive Index in TlInGaAs by Addition of TlJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 469
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High-efficiency heater-loaded wavelength selectable laserKurobe, T. / Kimoto, T. / Mukaihara, T. / Kasukawa, A. et al. | 2004
- 469
-
WA-2-1 High-Efficiency Heater-Loaded Wavelength Selectable LaserJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 473
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WA-2-2 Tunable InP-Based Buried Heterostructure Lasers with Vertically Integrated Mach-Zehnder Interferometer (VMZ)Japan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 473
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Tunable InP-based buried heterostructure lasers with vertically integrated Mach-Zender interferometer (VMZ)Jacke, T. / Todt, R. / Roesel, G. / Meyer, R. / Maute, M. / Amann, M.-C. et al. | 2004
- 476
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WA-2-3 1.55 mum BH-DFB Laser with Integrated Spot-Size Converter for Flip-Chip ApplicationsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 476
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1.55 mu m BH-DFB laser with integrated spot-size converter for flip-chip applicationsJaniak, K. / Kreissl, J. / Fidorra, S. / Hartwich, T. / Rehbein, W. / Wache, G. / Heidrich, H. et al. | 2004
- 476
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1.55 /spl mu/m BH-DFB laser with integrated spot-size converter for flip-chip applicationsJaniak, K. / Kreissl, J. / Fidorra, S. / Hartwich, T. / Rehbein, W. / Wache, G. / Heidrich, H. et al. | 2004
- 480
-
In-situ cleaned high-quality InGaAlAs-InGaAsP butt-joint grown by metal-organic vapor phase epitaxyKitatani, T. / Shinoda, K. / Tsuchiya, T. / Sato, H. / Ouchi, K. / Uchiyama, H. / Tsuji, S. / Aoki, M. et al. | 2004
- 480
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WA-2-4 In-situ Cleaned High-Quality InGaAlAs-InGaAsP Butt-Joint Grown by Metal-Organic Vapor Phase EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 484
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WA-2-5 Arrayed Waveguides with Linearly Varying Refractive Index Distribution and Its Application for Wavelength DemultiplexerJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 484
-
Arrayed waveguides with linearly varying refractive index distribution and its application for wavelength demultiplexerKawakita, Y. / Saitoh, T. / Kawai, A. / Shimotaya, S. / Shimomura, K. et al. | 2004
- 488
-
An apodized sampled grating using a vertical-groove high-mesa waveguide structureSegawa, T. / Matsuo, S. / Ohiso, Y. / Ishii, T. et al. | 2004
- 488
-
WA-2-6 An Apodized Sampled Grating Using a Vertical-Groove High-Mesa Waveguide StructureJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 492
-
Gas source MBE growth of Tl-containing semiconductors and their application to temperature-insensitive wavelength laser diodesAsahi, H. / Lee, H.J. / Fujiwara, A. / Imada, A. / Mukai, K. / Hasegawa, S. et al. | 2004
- 492
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WB-2-1 Gas Source MBE Growth of Tl-Containing Semiconductors and Their Application to Temperature-Insensitive Wavelength Laser DiodesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 497
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WB-2-2 A Comparative Study of GaTlAs, InTlAs and GaInTlAs Grown by SSMBE: The Detrimental Effect of IndiumJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 497
-
A comparative study of GaTlAs, InTlAs and GaInTlAs grown by SSMBE: the detrimental effect of indiumBeneyton, R. / Regreny, P. / Gendry, M. / Grenet, G. / Hollinger, G. / Canut, B. et al. | 2004
- 501
-
WB-2-3 Molecular Beam Epitaxy of Quaternary Semiconductor Alloy GaNAsBiJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 501
-
Molecular beam epitaxy of quaternary semiconductor alloy GaNAsBiYoshimoto, M. / Huang, W. / Takehara, Y. / Oe, K. / Chayahara, A. / Horino, Y. et al. | 2004
- 505
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Spin injection into semiconductors: the role of the Fe/Al/sub x/Ga/sub 1-x/As interfaceAdelmann, C. / Schultz, B.D. / Dong, X.Y. / Palmstrom, C.J. / Lou, X. / Strand, J. / Xie, J.Q. / Park, S. / Fitzsimmons, M.R. / Crowell, P.A. et al. | 2004
- 505
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Spin injection into semiconductors: the role of the Fe/AlxGa1-xAs interfaceAdelmann, C. / Schultz, B.D. / Dong, X.Y. / Palmstrom, C.J. / Lou, X. / Strand, J. / Xie, J.Q. / Park, S. / Fitzsimmons, M.R. / Crowell, P.A. et al. | 2004
- 505
-
WB-2-4 Spin Injection into Semiconductors: The Role of the Fe/Al~XGa~1~-~XAs InterfaceJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 511
-
WA-3-1 Failure Analysis of Laser Diodes Using Transmission Electron MicroscopyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 511
-
Failure analysis of laser diodes using transmission electron microscopyMatsuda, T. / Tsukiji, N. / Iwase, F. et al. | 2004
- 515
-
WA-3-2 High Power CW-DFB-LD with a Novel Non-Integer Order Grating StructureJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 515
-
High power CW-DFB-LD with a novel non-integer order grating structureTakaki, K. / Funabashi, M. / Kasukawa, A. et al. | 2004
- 519
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Short cavity membrane BH-DFB laser with /spl lambda//4 phase shiftOkamoto, T. / Yamazaki, T. / Sakamoto, S. / Tamura, S. / Arai, S. et al. | 2004
- 519
-
WA-3-3 Short Cavity Membrane BH-DFB Laser with Lambda/4 Phase ShiftJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 523
-
WA-3-4 Improvement of Optical Flip-Flop Characteristics of Compact Directionally-Coupled Bistable Laser DiodeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 523
-
Improvement of optical flip-flop characteristics of compact directionally-coupled bistable laser diodeTakenaka, M. / Raburn, M. / Nakano, Y. et al. | 2004
- 527
-
WA-3-5 Highly Efficient InP-Based Narrowband Photodetectors for 40 to 85 GHz Linear High Power ApplicationsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 527
-
Highly efficient InP-based narrowband photodetectors for 40 to 85 GHz linear high power applicationsBach, H.-G. / Beling, A. / Mekonnen, A.A. / Schmidt, D. / Schlaak, W. / Kunkel, R. / Seeger, A. / Stollberg, M. / Steingruber, R. / Ebert, W. et al. | 2004
- 531
-
X-ray scattering techniques for the measurement of InP substratesGoorsky, M.S. / Poust, B. / Noori, A. / Hayashi, S. / Ho, R. et al. | 2004
- 531
-
WB-3-1 X-ray Scattering Techniques for the Measurement of InP SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 537
-
How thin can we make square profiles in InP/GaInAs/InP wells by organometallic vapor phase epitaxy? X-ray CTR scattering measurementsTabuchi, M. / Oga, R. / Takeda, Y. / Hisadome, S. / Yamada, H. et al. | 2004
- 537
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WB-3-2 How Thin Can We Make Square Profiles in InP/GaInAs/InP Wells by Organometallic Vapor Phase Epitaxy? - X-ray CTR Scattering Measurements -Japan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 541
-
WB-3-3 Photoluminescence Characterization of InGaAs/AlGaAs Strained-Quantum Well Active Layer on GaAs Substrate with 1.02-1.06 mum Wavelength Composition under High-Power 920-nm-Laser ExcitationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 541
-
Photoluminescence characterization of InGaAs/AlGaAs strained-quantum well active layer on GaAs substrate with 1.05-1.06-/spl mu/m wavelength composition under high-power 920-nm-laser excitationNakao, M. / Yuda, M. et al. | 2004
- 545
-
Polarization field in barrier-doped InGaN/AlInGaN multiple quantum wellsHsu, T.M. / Lai, C.Y. / Chang, W.-H. / Pan, C.-C. / Chuo, C.-C. / Chyi, J.-I. et al. | 2004
- 545
-
WB-3-4 Polarization Field in Barrier-Doped InGaN/AlInGaN Multiple Quantum WellsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 548
-
WB-3-5 In-Depth and In-Plane Characterization of Buried Semiconductor Heterostructures by Cathodoluminescence In-Depth SpectroscopyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 548
-
In-depth and in-plane characterization of buried semiconductor heterostructures by cathodoluminescence in-depth spectroscopyFumitaro, I. / Oikawa, T. / Hashizume, T. / Hasegawa, H. et al. | 2004
- 552
-
WA-4-1 Growth of Dislocation Free Grade Fe Doped InP CrystalsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 552
-
Growth of dislocation free grade Fe doped InP crystalsNoda, A. / Nakamura, M. / Arakawa, A. / Hirano, R. et al. | 2004
- 554
-
Quaternary InP-based layers grown in the 12/spl times/4" multiwafer planetarySchmitt, T. / Deufel, M. / Christiansen, K. / Hofeldt, J. / Marsan, D. et al. | 2004
- 554
-
Quaternary InP-based layers grown in the 12x4" multiwafer planetarySchmitt, T. / Deufel, M. / Christiansen, K. / Hofeldt, J. / Marsan, D. et al. | 2004
- 554
-
WA-4-2 Quaternary InP-Based Layers Grown in the 12x4" Multiwafer PlanetaryJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 556
-
Extraction of the average collector velocity in high-speed NpN InP/GaAsSb/InP DHBTsLiu, H.G. / Tao, N. / Watkins, S.P. / Bolognesi, C.R. et al. | 2004
- 556
-
WA-4-3 Extraction of the Average Collector Velocity in High-Speed NpN InP/GaAsSb/InP DHBTsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 558
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High f/sub T/ 0.05/spl mu/m In/sub 0.52/AlAs/In/sub 0.53/GaAs HEMT's with strained 5 nm InAs sub-channel on InP substrateKim Dae-Hyun, / Noh Hun-Hee, / Lee Kang-Min, / Lee, Jae.-Hak. / Wei Feng, / Xiaogang Xie, / Quangang Du, / Jian Jiang, / Seo Kwang-Seok, et al. | 2004
- 558
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WA-4-4 High f~T 0.05mum In~0~.~5~2AlAs/In~0~.~5~3GaAs HEMT's with Strained 5nm InAs Sub-Channel on InP SubstrateJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 560
-
WA-4-5 Absorption Saturation Intensity of InGaAs-InAlAs MQW under Tensile and Compressive StrainJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 560
-
Absorption saturation intensity of InGaAs-InAlAs MQW under tensile and compressive strainOkuno, T. / Masumoto, Y. / Higuchi, A. / Yoshino, H. / Bando, H. / Okamoto, H. et al. | 2004
- 562
-
WA-4-6 Low-Threshold and High Efficiency Distributed Reflector Laser with Wirelike Active Regions and Quantum-Wire DBRJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 562
-
Low-threshold and high efficiency distributed reflector laser with wirelike active regions and quantum-wire DBROhira, K. / Murayama, T. / Hirose, M. / Yagi, H. / Tamura, S. / Haque, A. / Arai, S. et al. | 2004
- 564
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CW operation at 1.34 /spl mu/m of an InGaSb quantum-dot vertical-cavity surface-emitting laser (VCSEL) on GaAs substrateYamamoto, N. / Akahane, K. / Gozu, S.-I. / Ohtani, N. et al. | 2004
- 564
-
WA-4-7 CW Operation at 1.34 mum of an InGaSb Quantum-Dot Vertical-Cavity Surface-Emitting Laser (VCSEL) on GaAs SubstrateJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 564
-
CW operation at 1.34 mu m of an InGaSb quantum-dot vertical-cavity surface-emitting laser (VCSEL) on GaAs substrateYamamoto, N. / Akahane, K. / Gozu, S.I. / Ohtani, N. et al. | 2004
- 569
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Design and operation of uncooled 10 Gb/s, 1310 nm electroabsorption modulated lasersGorkhale, M.R. / Studenkov, P.V. / Ueng-Mchale, J. / Thomson, J. / Yogeeswaran, Karthik. / Yao, J. / Van Saders, J. et al. | 2004
- 569
-
ThA-1-1 Design and Operation of Uncooled 10 Gb/s, 1310nm Electroabsorption Modulated LasersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 573
-
Low driving-voltage (1.1 Vpp) electroabsorption modulators operating at 40 Gbit/sFukano, H. / Tamura, M. / Yamanaka, T. / Nakajima, H. / Akage, Y. / Kondo, Y. / Saitoh, T. et al. | 2004
- 573
-
ThA-1-2 Low Driving-Voltage (1.1Vpp) Electroabsorption Modulators Operating at 40 Gbit/sJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 577
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ThA-1-3 42 GHz Bandwidth InGaAlAs/InP Electro Absorption Modulator with a Sub-Volt Modulation Drive Capability in a 50 nm Spectral RangeJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 577
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42 GHz bandwidth InGaAlAs/InP electro absorption modulator with sub-volt modulation drive capability in a 50 nm spectral rangeLe Pallec, M. / Decobert, J. / Kazmierski, D. / Ramdane, A. / El Dahdah, N. / Blache, F. / Provost, J.-G. / Landreau, J. / Barthe, F. / Lagay, N. et al. | 2004
- 581
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40 Gb/s InP-based Mach-Zehnder modulator with a driving voltage of 3 V/sub pp/Akiyama, S. / Hirose, S. / Itoh, H. / Takeuchi, T. / Watanabe, T. / Sekiguchi, S. / Kuramata, A. / Yamamoto, T. et al. | 2004
- 581
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ThA-1-4 40 Gb/s InP-Based Mach-Zehnder Modulator with a Driving Voltage of 3 V~p~pJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 585
-
ThA-1-5 45 GHz Bandwidth Travelling Wave Electrode Mach-Zehnder Modulator with Integrated Spot Size ConverterJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 585
-
45 GHz bandwidth travelling wave electrode Mach-Zehnder modulator with integrated spot size converterHoffman, D. / Staroske, S. / Velthaus, K.-O. et al. | 2004
- 589
-
ThB-1-1 Growth and Characterization of LEC, VCZ and VB InP Single CrystalsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 589
-
Growth and characterization of LEC, VCZ and VB InP single crystalsKawase, T. / Hosaka, N. / Hashio, K. / Hosokawa, Y. et al. | 2004
- 595
-
Large diameter Sn-doped indium phosphide single crystal growth by LEC methodNiefeng Sun, / Luhong Mao, / Xiaolong Zhou, / Xiawan Wu, / Weilian Guo, / Ming Hu, / Lingxia Li, / Mi Xiao, / Bin Liao, / Guangyao Yang, et al. | 2004
- 595
-
ThB-1-2 Large Diameter Sn-Doped Indium Phosphide Single Crystal Growth by LEC MethodJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 599
-
ThB-1-3 Quick Assessment of Homogeneity in Large-Diameter InP Substrate by Mapping Near-Infrared TransmittanceJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 599
-
Quick assessment of homogeneity in large-diameter InP substrate by mapping near-infrared transmittanceShiomi, R. / Kawase, T. / Yamada, M. et al. | 2004
- 603
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ThB-1-4 Simplified Nonplanar Wafer Bonding for Heterogeneous Device IntegrationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 603
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Simplified nonplanar wafer bonding for heterogeneous device integrationGeske, J. / Bowers, J.E. / Riley, A. et al. | 2004
- 606
-
ThB-1-5 Photoluminescence and Electrical Properties of InGaAs/InP Composite Channel Metamorphic HEMT Structures Subjected to Rapid Thermal AnnealingJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 606
-
Photoluminescence and electrical properties of InGaAs/InP composite channel metamorphic HEMT structures subjected to rapid thermal annealingYuwei Liu, / Hong Wang, / Yongzhong Xiong, et al. | 2004
- 609
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Millimeter-wave and mixed-signal integrated circuits based on advanced metamorphic HEMT technologySchlechtweg, M. / Leuther, A. / Tessman, A. / Schworer, C. / Massler, H. / Reinert, W. / Lang, M. / Nowotny, U. / Kappeler, O. / Walther, M. et al. | 2004
- 609
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ThA-2-1 Millimeter-Wave and Mixed Signal Integrated Circuits Based on Advanced Metamorphic HEMT TechnologyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 615
-
Improvement in reliability of InP-based HEMTs by suppressing impact ionizationHara, N. / Okamoto, N. / Imanishi, K. / Sawada, K. / Takahashi, T. / Makiyama, K. / Takikawa, M. et al. | 2004
- 615
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ThA-2-2 Improvement in Reliability of InP-Based HEMTs by Suppressing Impact IonizationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 619
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Degradation analysis of 0.1 /spl mu/m InP HEMTs using low frequency noise characterizationChou, Y.C. / Guan, H. / Li, G.P. / Lai, R. / Grundbacher, R. / Leung, D. / Eng, D. / Block, T. / Oki, A. et al. | 2004
- 619
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ThA-2-3 Degradation Analysis of 0.1 mum InP HEMTs Using Low Frequency Noise CharacterizationJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 623
-
ThA-2-4 Study of Breakdown Dynamics in InAlAs/InGaAs/InP HEMTs with Gate Length Scaling Down to 80 nmJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 627
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ThA-2-5 Control and Observation of High-Frequency Chaos in the Resonant Tunneling Chaos Generator ICJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 627
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Control and observation of high-frequency chaos in the resonant tunneling chaos generator ICMaezawa, K. / Kawano, Y. / Komoto, Y. / Ohno, Y. / Kishimoto, S. / Mizutani, T. et al. | 2004
- 631
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Bandgap engineering of GaInNP on GaAs(001) for electronic applicationsTu, C.W. / Hong, Y.G. / Andre, R. / Welty, R.J. / Asbeck, P.M. et al. | 2004
- 631
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ThB-2-1 Bandgap Engineering of GaInNP on GaAs(001) for Electronic ApplicationsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 636
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Improved luminescence efficiency of InAs quantum dots by nitrogen-induced strain compensation with GaNAs burying layersSuemune, I. / Ganapathy, S. / Kumano, H. / Uesugi, K. et al. | 2004
- 636
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ThB-2-2 Improved Luminescence Efficiency of InAs Quantum Dots by Nitrogen-Induced Strain Compensation with GaNAs Burying LayersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 640
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ThB-2-3 Nitridized InAs/GaAs Self-Assembled Quantum Dots for Optical Communication WavelengthsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 640
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Nitridized InAs/GaAs self-assembled quantum dots for optical communication wavelengthKita, T. / Masuda, Y. / Seki, H. / Mori, T. / Wada, O. et al. | 2004
- 643
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Electroluminescence of InGaAsSbN quantum well diodes grown on InP substratesNakagawa, T. / Kawamura, Y. / Amano, M. / Ouchi, K. / Inoue, N. et al. | 2004
- 643
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ThB-2-4 Electroluminescence of InGaAsSbN Quantum Well Diodes Grown on InP SubstratesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 647
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ThB-2-5 Growth of GaAs and InGaAs Nanowires by Utilizing Selective Area MOVPEJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 647
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Growth of GaAs and InGaAs nanowires by utilizing selective area MOVPENoborisaka, J. / Motohisa, J. / Takeda, J. / Inari, M. / Miyoshi, Y. / Ooike, N. / Fukui, T. et al. | 2004
- 653
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Over 500 GHz InP heterojunction bipolar transistorsFeng, M. / Hafez, W. / Jie-Wie Lai, et al. | 2004
- 653
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FA-1-1 Over 500 GHz InP Heterojunction Bipolar TransistorsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 659
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InP/InGaAs DHBT parallel feedback amplifier with 14-dB gain and 91-GHz bandwidthFukuyama, H. / Sano, K. / Ida, M. / Kurishima, K. / Murata, K. / Ishii, K. / Enoki, T. / Sugahara, H. et al. | 2004
- 659
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FA-1-2 InP/InGaAs DHBT Parallel Feedback Amplifier with 14-dB Gain and 91-GHz BandwidthJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 663
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Ultra high frequency static dividers in a narrow mesa InGaAs/InP DHBT technologyGriffith, Z. / Dahlstrom, M. / Seo, M. / Rodwell, M.J.W. / Urteaga, M. / Pierson, R. / Rowell, P. / Brar, B. / Lee, S. / Nguyen, N. et al. | 2004
- 663
-
FA-1-3 Ultra High Frequency Static Dividers in a Narrow Mesa InGaAs/InP DHBT TechnologyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 667
-
Wide bandwidth InP DHBT technology utilizing dielectric sidewall spacersUrteaga, M. / Pierson, R. / Rowell, P. / Brar, B. / Griffith, Z. / Dahlstrom, M. / Rodwell, M.J.W. / Lee, S. / Nguyen, N. / Nguyen, C. et al. | 2004
- 667
-
FA-1-4 Wide Bandwith InP DHBT Technology Utilizing Dielectric Sidewall SpacersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 671
-
Millimeter and submillimeter oscillators using resonant tunneling diodes with stacked-layer slot antennasOrihashi, N. / Hattori, S. / Asada, M. et al. | 2004
- 671
-
FA-1-5 Millimeter and Submillimeter Oscillators Using Resonant Tunneling Diodes with Stacked-Layer Slot AntennasJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 675
-
FB-1-1 1.3 to 1.6 Micron Quantum Dot DevicesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 675
-
1.3 to 1.6 micron quantum dot devicesZhang, L. / Gray, A.L. / Wang, R. / Luong, S. / Cheng, L. / Sun, K. / Bryan, C. / Nabulsi, F. / Whittington, T. / Zou, Z. et al. | 2004
- 679
-
High-speed modulation characteristics of 1.3 /spl mu/m quantum-dot lasers: influence of effective capture time on the maximum bandwidthIshida, M. / Hatori, N. / Akiyama, T. / Otsubo, K. / Nakata, Y. / Ebe, H. / Sugarawa, M. / Arakawa, Y. et al. | 2004
- 679
-
FB-1-2 High-Speed Modulation Characteristics of 1.3mum Quantum-Dot Lasers: Influence of Effective Capture Time on the Maximum BandwidthJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 683
-
Wavelength elongation of MBE grown (Ga)InAs QDs by GaInAsSb cover layerMatsuura, T. / Miyamoto, T. / Ohta, M. / Matsui, Y. / Furuhata, T. / Koyama, F. et al. | 2004
- 683
-
FB-1-3 Wavelength Elongation of MBE Grown (Ga)InAs QDs by GaInAsSb Cover LayerJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 687
-
FB-1-4 Self-Assembled InAsSb Quantum Dots Grown on GaAs Substrates by Molecular-Beam EpitaxyJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 687
-
Self-assembled InAsSb quantum dots grown on GaAs substrates by molecular-beam epitaxyKudo, M. / Nakaoka, T. / Iwamoto, S. / Arakawa, Y. et al. | 2004
- 691
-
FB-1-5 2 mum InAsSb Quantum-Dot LasersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 691
-
2 /spl mu/m InAsSb quantum-dot lasersQiu, Y. / Uhl, D. / Keo, S. et al. | 2004
- 695
-
FA-2-1 Long-Wavelength VCSELsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 695
-
Long-wavelength VCSELsMaute, M. / Amann, M.-C. et al. | 2004
- 700
-
FA-2-2 1.55 mum VCSELs with InP/Air-Gap Distributed Bragg ReflectorsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 700
-
1.55 /spl mu/m VCSELs with InP/air-gap distributed Bragg reflectorsStrassner, M. / Regreny, P. / Bouchoule, S. / Chitica, N. / Saint-Girons, G. / Sagnes, I. / Jacquet, J. / Leclercq, J.-L. et al. | 2004
- 704
-
FA-2-3 High Output Power 1540-nm Vertical-Cavity Semiconductor Optical AmplifiersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 704
-
High output power 1540-nm vertical-cavity semiconductor optical amplifiersKimura, T. / Bjorlin, S. / Qi Chen, / Wang, C. / Bowers, J. et al. | 2004
- 708
-
FA-2-4 Microelectromechanical Tunable Long-Wavelength Vertical-Cavity Semiconductor Optical AmplifiersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 708
-
Microelectromechanical tunable long-wavelength vertical-cavity semiconductor optical amplifiersCole, G.D. / Qi Chen, / Bjorlin, E.S. / Kimura, T. / Shaomin Wu, / Wang, C.S. / Bowers, J.E. / MacDonald, N.C. et al. | 2004
- 712
-
InP HBT IC manufacturingNguyen, N.X. / Fierro, J. / Feng, K.T. / Nguyen, C. et al. | 2004
- 712
-
FB-2-1 InP-HBT IC ManufacturingJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 717
-
FB-2-2 High Etch Rate and Low Temperature InP Backside Via Etching Using HI-based Inductively Coupled PlasmaJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 717
-
High etch rate and low temperature InP backside via etching using HI-based inductively coupled plasmaKotani, K. / Kawasaki, T. / Miyazaki, T. / Yaegassi, S. / Yano, H. et al. | 2004
- 721
-
FB-2-3 Nanogate InP-HEMT Technology for Ultrahigh-Speed PerformanceJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 721
-
Nanogate InP-HEMT technology for ultrahigh-speed performanceShinohara, K. / Yamashita, Y. / Endoh, A. / Watanabe, I. / Hikosaka, K. / Mimura, T. / Hiyamizu, S. / Matsui, T. et al. | 2004
- 727
-
Control of plasma induced fluorine damage in P-HEMT using InSb barrier layerUchiyama, H. / Taniguchi, T. / Kudo, M. et al. | 2004
- 727
-
FB-2-4 Control of Plasma Induced Fluorine Damage in P-HEMT Using InSb Barrier LayerJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 731
-
Highly reliable 1.3-/spl mu/m InGaAlAs buried heterostructure laser diode for 10 GbESato, H. / Tsuchiya, T. / Kitatani, T. / Takahashi, N. / Oouchi, K. / Nakahara, K. / Aoki, M. et al. | 2004
- 731
-
FA-3-1 Highly Reliable 1.3-mum InGaAlAs Buried Heterostructure Laser Diode for 10GbEJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 734
-
120 /spl deg/C operation of 10 Gbps direct modulated 1.3 /spl mu/m AlGaInAs-MQW DFB laser diodesShirai, S. / Watatani, C. / Takemi, M. / Ota, T. / Takagi, K. / Aoyagi, T. / Omura, E. et al. | 2004
- 734
-
FA-3-2 120^oC Operation of 10Gbps Direct Modulated 1.3mum AlGaInAs-MQW DFB Laser DiodesJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 738
-
Temperature and wavelength dependence of recombination processes in 1.5 /spl mu/m InGaAlAs/InP-based lasersSweeney, S.J. / McConville, D. / Jin, S.R. / Ahmad, C.N. / Masse, N.F. / Bouyssou, R.-X. / Adams, A.R. / Hanke, C. et al. | 2004
- 738
-
FA-3-3 Temperature and Wavelength Dependence of Recombination Processes in 1.5mum InGaAlAs/InP-Based LasersJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 742
-
Ruthenium-doped InP buried 1.3-/spl mu/m DFB lasers on a p-type substrateIga, R. / Kondo, Y. / Kishi, K. / Saitoh, T. et al. | 2004
- 742
-
FA-3-4 Ruthenium-Doped InP Buried 1.3-mum DFB Lasers on a P-Type SubstrateJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 746
-
FA-3-5 ASE-Injected Wideband Gain Lasers Covering C-Band Channels with Temperature Range from -30 to 80^oC in a 155 Mb/s WDM-PONJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 746
-
ASE-injected wideband gain lasers covering C-band channels with temperature range from - 30 to 80/spl deg/C in a 155 Mb/s WDM-PONLee, J.K. / Lee, E.H. / Shin, D.J. / Bang, Y.C. / Kim, J.Y. / Lee, J.H. / Kim, H.S. / Oh, Y.K. / Kim, T. et al. | 2004
- 750
-
Low leakage current metamorphic InGaAs/InP DHBTs with f/sub /spl tau// and f/sub max/ > 268 GHz on a GaAs substrateGriffith, Z. / Kim, Y.M. / Dahlstrom, M. / Gossard, A.C. / Rodwell, M.J.W. et al. | 2004
- 750
-
FB-3-1 Low Leakage Current Metamorphic InGaAs/InP DHBTs with f~t~a~u and f~m~a~x 268 GHz on a GaAs SubstrateJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 753
-
FB-3-2 Realization of High-Speed InP SHBTs Using Novel but Simple Techniques for Parasitic ReductionJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 753
-
Realization of high-speed InP SHBTs using novel but simple techniques for parasitic reductionDaekyu Yu, / Kwangsik Choi, / Kyungho Lee, / Bumman Kim, / Zhu, H. / Vargason, K. / Kuo, J.M. / Kao, Y.C. et al. | 2004
- 757
-
First power demonstration of InP/GaAsSb/InP double HBTsXin Zhu, / Pavlidis, D. / Guangyuan Zhao, et al. | 2004
- 757
-
FB-3-3 First Power Demonstration of InP/GaAsSb/InP Double HBTsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 761
-
High current density and high power density operation of ultra high speed InP DHBTsDahlstrom, M. / Griffith, Z. / Young-Min Kim, / Rodwell, M.J.W. et al. | 2004
- 761
-
FB-3-4 High Current Density and High Power Density Operation of Ultra High Speed InP DHBTsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 765
-
Physically based analysis of hot carrier induced degradation in InP/InGaAs double heterojunction bipolar transistorsHong Wang, / Yuan Tian, et al. | 2004
- 765
-
FB-3-5 Physically Based Analysis of Hot Carrier Induced Degradation in InP/InGaAs Double Heterojunction Bipolar TransistorsJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 768
-
RF performance and process development of InP DHBTs using non-selective emitter regrowthScott, D. / Yun Wei, / Urteaga, M. / Rodwell, M.J.W. et al. | 2004
- 768
-
FB-3-6 RF Performance and Process Development of InP DHBTs Using Non-Selective Emitter RegrowthJapan Society of Applied Physics / IEEE Lasers and Electro-Optics Society / IEEE Electron Devices Society et al. | 2004
- 773
-
Author index| 2004
- 780
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[Back cover]| 2004
- 823
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Study of breakdown dynamics in InAlAs/InGaAs/InP HEMTs with gate length scaling down to 80 nmPierobon, R. / Rampazzo, F. / Clonfero, F. / De Pellegrin, T. / Bertazzo, M. / Meneghesso, G. / Zanoni, E. / Suemitsu, T. / Enoki, T. et al. | 2004
- i
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2004 International Conference on Indium Phosphide and Related Materials 16th lPRM| 2004
- ii
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Copyright and reprint permission| 2004
- iii
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Acknowledgement| 2004
- iv
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Conference committee| 2004
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2004 International Conference on Indium Phosphide and Related Materials. 16th IPRM (IEEE Cat. No.04CH37589)| 2004