Please choose your delivery country and your customer group
Diode laser arrays operating in the spectral range 2-3 micron can be used as compact and efficient light sources for many commercial and military applications, including infrared countermeasures. These devices can be used directly as sources or as a low quantum-defect pumping sources for a new generation of the optically pumped semiconductor lasers operating in band-II of atmospheric transparency. In this paper it is reported on the design and fabrication of 2.3 micron high power linear diode laser arrays that output 10 W CW and over 18.5 W quasi-CW (qCW) (30 microsec/300 Hz) per 19 emitter 1 cm laser bar. Laser heterostructures were grown by solid source molecular-beam epitaxy on n-GaSb substrates. An approximately 800-nm-wide Al0.25Ga0.75As0.02Sb0.98 broadened-waveguide layer that includes the two QWs was sandwiched between two, 2-micron-wide Al0.9Ga0.1As0.07Sb0.93 cladding layers. The wafer was processed into 1-mm-long, 1-cm-wide laser bars having a 20 % fill-factor. Each single gain-guided element aperture was 100 urn.. The facets were coated to reflect 3% and 95%. One bar was chipped into single laser emitters. Single lasers were indium-soldered epi-side down onto copper heatsinks and characterized.