SiC and III-nitride growth in a hot-wall CVD reactor (English)
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In:
ECSCRM, Silicon Carbide and Related Materials, European Conference, 5
;
61-66
;
2005
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ISBN:
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ISSN:
- Conference paper / Print
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Title:SiC and III-nitride growth in a hot-wall CVD reactor
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Contributors:Janzen, E. ( author ) / Bergman, J.P. ( author ) / Danielsson, Ö. ( author ) / Forsberg, U. ( author ) / Hallin, C. ( author ) / Hassan, J. ( author ) / Henry, A. ( author ) / Ivanov, I.G. ( author ) / Kakanakova-Georgieva, A. ( author ) / Persson, P. ( author )
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Published in:Materials Science Forum ; 483-485 ; 61-66
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Publisher:
- New search for: Trans Tech Publications
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Place of publication:Zürich-Ütikon
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Publication date:2005
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Size:6 Seiten, 9 Bilder, 1 Tabelle, 13 Quellen
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:AlN (Aluminiumnitrid) , Aluminiumgalliumnitrid , Anwendung in der Elektrotechnik und Elektronik , dicke Schicht , Exciton , Galliumnitrid , Gasphasenepitaxie , Halbleitersubstrat , HEMT (High Electron Mobility Transistor) , Hochtemperatur-CVD , Homoepitaxie , MOCVD (metallorganische CVD) , Nitrid , Reaktionskammer , SiC (Siliciumcarbid)
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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Progress and Limits of the Numerical Simulation of SiC Bulk and Epitaxy Growth ProcessesPons, M. / Blanquet, E. / Dedulle, J. M. / Ucar, M. / Wellmann, P. / Danielsson, O. / Ferret, P. / Di Cioccio, L. / Baillet, F. / Chaussende, D. et al. | 2005
- 9
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Growth of Large Diameter SiC Crystals by Advanced Physical Vapor TransportAnderson, T. / Barrett, D. / Chen, J. / Emorhokpor, E. / Gupta, A. / Hopkins, R. / Souzis, A. / Tanner, C. / Yoganathan, M. / Zwieback, I. et al. | 2005
- 13
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Crystalline Quality Evaluation of 6H-SiC Bulk Crystals Grown from Si-Ti-C Ternary SolutionKusunoki, K. / Kamei, K. / Ueda, Y. / Naga, S. / Ito, Y. / Hasebe, M. / Ujihara, T. / Nakajima, K. et al. | 2005
- 17
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Growth of 2 Inches 6H-SiC Single Crystals by Sublimation Method: The Comparison of alpha- and beta-SiC PowdersSeo, S. H. / Song, J. S. / Oh, M. H. / Wang, Y. Z. et al. | 2005
- 21
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A Study of 6H-Seeded 4H-SiC Bulk Growth by PVTTupitsyn, E. Y. / Arjunan, A. / Bondokov, R. T. / Kennedy, R. M. / Sudarshan, T. S. et al. | 2005
- 25
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Modified Physical Vapor Transport Growth of SiC - Control of Gas Phase Composition for Improved Process ConditionsWellmann, P. J. / Straubinger, T. L. / Desperrier, P. / Muller, R. / Kunecke, U. / Sakwe, S. A. / Schmitt, H. / Winnacker, A. / Blanquet, E. / Dedulle, J. M. et al. | 2005
- 31
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High Al-Doping of SiC Using a Modified PVT (M-PVT) Growth Set-UpMuller, R. / Kunecke, U. / Weingartner, R. / Schmitt, H. / Desperrier, P. / Wellmann, P. et al. | 2005
- 35
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Growth of Undoped (Vanadium-Free) Semi-Insulating 6H-SiC Single CrystalsAnderson, T. A. / Barrett, D. L. / Chen, J. / Emorhokpor, E. / Gupta, A. / Hopkins, R. H. / Souzis, A. E. / Tanner, C. D. / Yoganathan, M. / Zwieback, I. et al. | 2005
- 39
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Effect of Nitrogen Doping on the Formation of Planar Defects in 4H-SiCSiche, D. / Albrecht, M. / Doerschel, J. / Irmscher, K. / Rost, H. J. / Rossberg, M. / Schulz, D. et al. | 2005
- 43
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Evolution Roots of Growth-Induced Polytype Domains in 6H-SiC Single CrystalsSeo, S. H. / Song, J. S. / Oh, M. H. / Wang, Y. Z. et al. | 2005
- 47
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SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt DesignKim, J. G. / Ku, K. R. / Kim, D. J. / Kim, S. P. / Lee, W. J. / Shin, B. C. / Lee, G. H. / Kim, I. S. et al. | 2005
- 53
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Numerical Analysis of Growth Condition on SiC-CVD in the Horizontal Hot-Wall ReactorNishizawa, S. I. / Pons, M. et al. | 2005
- 57
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Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hot-Wall CVD ReactorVeneroni, A. / Omarini, F. / Masi, M. / Leone, S. / Mauceri, M. / Pistone, G. / Abbondanza, G. et al. | 2005
- 61
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SiC and III-nitride growth in a hot-wall CVD reactorJanzen, E. / Bergman, J.P. / Danielsson, Ö. / Forsberg, U. / Hallin, C. / Hassan, J. / Henry, A. / Ivanov, I.G. / Kakanakova-Georgieva, A. / Persson, P. et al. | 2005
- 61
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SiC and III-Nitride Growth in Hot-Wall CVD ReactorJanzen, E. / Bergman, J. P. / Danielsson, O. / Forsberg, U. / Hallin, C. / Hassan, J. u. / Henry, A. / Ivanov, I. G. / Kakanakova-Georgieva, A. / Persson, P. et al. | 2005
- 67
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New Achievements on CVD Based Methods for SiC Epitaxial GrowthCrippa, D. / Valente, G. L. / Ruggiero, A. / Neri, L. / Reitano, R. / Calcagno, L. / Foti, G. / Mauceri, M. / Leone, S. / Pistone, G. et al. | 2005
- 73
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Increased Growth Rate in a SiC CVD Reactor Using HCl as a Growth AdditiveMyers, R. / Kordina, O. / Shishkin, Z. / Rao, S. / Everly, R. / Saddow, S. E. et al. | 2005
- 77
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High Growth Rate (up to 20 mum/h) SiC Epitaxy in a Horizontal Hot-Wall ReactorZhang, J. / Mazzola, J. / Hoff, C. / Koshka, Y. / Casady, J. et al. | 2005
- 81
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Homoepitaxial Growth of 4H-SiC Using CH~3Cl Carbon PrecursorKoshka, Y. / Lin, H. D. / Melnychuk, G. / Mazzola, M. S. / Wyatt, J. L. et al. | 2005
- 85
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Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVDWada, K. / Kimoto, T. / Nishikawa, K. / Matsunami, H. et al. | 2005
- 89
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4H-SiC Epitaxial Growth on SiC Substrates with Various Off-AnglesSaitoh, H. / Kimoto, T. et al. | 2005
- 93
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2-Inch 4H-SiC Homoepitaxial Layer Grown on On-Axis C-Face Substrate by CVD MethodKojima, K. / Okumura, H. / Kuroda, S. / Arai, K. / Ohi, A. / Akinaga, H. et al. | 2005
- 97
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Investigation of Basal Plane Dislocations in the 4H-SiC Epilayers Grown on {0001} SubstratesTsuchida, H. / Miyanagi, T. / Kamata, I. / Nakamura, T. / Izumi, K. / Nakayama, K. / Ishii, R. / Asano, K. / Sugawara, Y. et al. | 2005
- 101
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Epitaxial Growth and Characterization of Phosphorus Doped SiC Using TBP as PrecursorHenry, A. / Janzen, E. et al. | 2005
- 105
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Experimental Investigation and Simulation of Silicon Droplets Formation during SiC CVD Epitaxial GrowthMelnychuk, G. / Koshka, Y. / Mazzola, M. S. / Wyatt, J. L. et al. | 2005
- 109
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Structural Improvement of Seeds for Bulk Crystal Growth by Using Hot-Wall CVD of 4H-SiCWagner, G. / Schulz, D. / Doerschel, J. et al. | 2005
- 113
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CVD Growth and Characterization of 4H-SiC Epitaxial Film on (1120) As-Cut SubstratesZhang, Z. / Gao, Y. / Arjunan, A. C. / Toupitsyn, E. Y. / Sadagopan, P. / Kennedy, R. / Sudarshan, T. S. et al. | 2005
- 117
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Evaluation of p-Type Doping for (1120) Epitaxial Layers Grown on alpha-Cut (1120) 4H-SiC SubstratesBlanc, C. / Zielinski, M. / Souliere, V. / Sartel, C. / Juillaguet, S. / Contreras, S. / Camassel, J. / Monteil, Y. et al. | 2005
- 121
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Aluminum Doping of 4H-SiC Grown with HexaMethylDiSilaneSartel, C. / Souliere, V. / Zielinski, M. / Monteil, Y. / Camassel, J. / Rushworth, S. et al. | 2005
- 125
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Is the Al Solubility Limit in SiC Temperature Dependent or not?Jacquier, C. / Ferro, G. / Zielinski, M. / Polychroniadis, E. K. / Andreadou, A. / Camassel, J. / Monteil, Y. et al. | 2005
- 129
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Homoepitaxial Growth on 4H-SiC (0338) Face by Sublimation Close Space TechniqueYoneda, S. / Furusho, T. / Takagi, H. / Ohta, S. / Nishino, S. et al. | 2005
- 133
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LPE of Silicon Carbide Using Diluted Si-Ge FluxFilip, O. / Epelbaum, B. / Bickermann, M. / Winnacker, A. et al. | 2005
- 137
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Large Area SiC Epitaxial Layer Growth in a Warm-Wall Planetary VPE ReactorBurk, A. A. / O Loughlin, M. J. / Paisley, M. J. / Powell, A. R. / Brady, M. F. / Leonard, R. T. / Muller, S. G. / Allen, S. T. et al. | 2005
- 141
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Epitaxial Growth of n-Type 4H-SiC on 3 Wafers for Power DevicesThomas, B. / Hecht, C. et al. | 2005
- 147
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Epitaxial Overgrowth of 4H-SiC for Devices with p-Buried Floating Junction StructureNishio, J. / Ota, C. / Shinohe, T. / Kojima, K. / Okumura, H. et al. | 2005
- 151
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Reduction of Stacking Faults in Fast Epitaxial Growth of 4H-SiC and its Impacts on High-Voltage Schottky DiodesFujiwara, H. / Kimoto, T. / Tojo, T. / Matsunami, H. et al. | 2005
- 155
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Development of Epitaxial SiC Processes Suitable for Bipolar Power DevicesSumakeris, J. J. / Das, M. K. / Ha, S. / Hurt, E. / Irvine, K. / Paisley, M. J. / O Loughlin, M. J. / Palmour, J. W. / Skowronski, M. / Hobgood, H. M. et al. | 2005
- 159
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Characteristics of Trench-Refilled 4H-SiC P-N Junction Diodes Fabricated by Selective Epitaxial GrowthLi, C. / Losee, P. / Seiler, J. / Bhat, I. / Chow, T. P. et al. | 2005
- 163
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Molecular Beam Epitaxy of Semiconductor Nanostructures Based on SiCFissel, A. et al. | 2005
- 169
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Computer Simulation of the Early Stages of Nano Scale SiC Growth on SiSafonov, K. L. / Trushin, Y. V. / Ambacher, O. / Pezoldt, J. et al. | 2005
- 173
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Growth of 3C-(Si~1~-~xC~1~-~y)Ge~x~+~y Layers on 4H-SiC by Molecular Beam EpitaxyWeih, P. / Romanus, H. / Stauden, T. / Spiess, L. / Ambacher, O. / Pezoldt, J. et al. | 2005
- 177
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Lateral Epitaxial Overgrowth of 3C-SiC on Si Substrates by CVD MethodSugishita, S. / Shoji, A. / Mukai, Y. / Nishiguchi, T. / Michikami, K. / Issiki, T. / Ohshima, S. / Nishino, S. et al. | 2005
- 181
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Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) SubstrateNakamura, M. / Isshiki, T. / Nishiguchi, T. / Nishio, K. / Ohshima, S. / Nishino, S. et al. | 2005
- 185
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Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD MethodIsshiki, T. / Nakamura, M. / Nishiguchi, T. / Nishio, K. / Ohshima, S. / Nishino, S. et al. | 2005
- 189
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Planar Defects, Voids and their Relationship in 3C-SiC LayersMendez, D. / Aouni, A. / Araujo, D. / Ferro, G. / Monteil, Y. / Bustarret, E. et al. | 2005
- 193
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Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si SubstrateNishiguchi, T. / Nakamura, M. / Nishio, K. / Isshiki, T. / Ohshima, S. / Nishino, S. et al. | 2005
- 197
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Regrowth of 3C-SiC on CMP Treated 3C-SiC/Si Epitaxial LayersMank, H. / Moisson, C. / Turover, D. / Twigg, M. / Saddow, S. E. et al. | 2005
- 201
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Low Temperature Chemical Vapor Deposition of 3C-SiC on Si SubstratesForster, C. / Cimalla, V. / Ambacher, O. / Pezoldt, J. et al. | 2005
- 205
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Challenge to 200 mm 3C-SiC Wafers Using SOINakao, M. / Iikawa, H. / Izumi, K. / Yokoyama, T. / Kobayashi, S. et al. | 2005
- 209
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Key Radicals for Hetero-Epitaxial Growth of 3C-SiC on Silicon SubstratesShimizu, H. / Hisada, K. / Aoyama, Y. et al. | 2005
- 213
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Nucleation Control in FLASIC Assisted Short Time Liquid Phase Epitaxy by Melt ModificationPezoldt, J. / Polychroniadis, E. / Stauden, T. / Ecke, G. / Chassagne, T. / Vennegues, P. / Leycuras, A. / Panknin, D. / Stoemenos, J. / Skorupa, W. et al. | 2005
- 217
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A Thermal Model for Flash Lamp Annealing of 3C-SiC/Si Multi-Layer Systems (i-FLASiC)Smith, M. / McMahon, R. A. / Skorupa, W. / Voelskow, M. / Stoemenos, J. et al. | 2005
- 221
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Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si SubstrateShoji, A. / Nakamura, M. / Mitikami, K. / Isshiki, T. / Ohshima, S. / Nishino, S. et al. | 2005
- 225
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Large Area DPB Free (111) beta-SiC Thick Layer Grown on (0001) alpha-SiC Nominal Surfaces by the CF-PVT MethodChaussende, D. / Latu-Romain, L. / Auvray, L. / Ucar, M. / Pons, M. / Madar, R. et al. | 2005
- 229
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Comparative Evaluation of Free-Standing 3C-SiC CrystalsPolychroniadis, E. K. / Balloud, C. / Juillaguet, S. / Ferro, G. / Monteil, Y. / Camassel, J. / Stoemenos, J. et al. | 2005
- 233
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Epitaxial SiC Formation at the SiO~2/Si Interface by C^+ Implantation into SiO~2 and Subsequent AnnealingVoelskow, M. / Panknin, D. / Polychroniadis, E. K. / Ferro, G. / Godignion, P. / Mestres, N. / Skorupa, W. / Monteil, Y. / Stoemenos, J. et al. | 2005
- 237
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Microfabrication of Si Column Covered with SiC Film for Electron EmitterNakata, T. / Ohshiro, Y. / Shoji, A. / Okui, Y. / Ohshima, S. / Hayashi, Y. / Nishino, S. et al. | 2005
- 241
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Formation of Ferromagnetic SiC:Mn PhasesSyvajarvi, M. / Nasi, L. / Yazdi, G. R. / Salviati, G. / Izadifard, M. / Buyanova, I. A. / Chen, W. M. / Yakimova, R. et al. | 2005
- 245
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Two-Dimensional Model of Conjugate Heat and Mass Transport in the Isothermal Chemical Vapour Infiltration of 3D-Preform by SiC MatrixKulik, V. I. / Kulik, A. V. / Ramm, M. S. / Nilov, A. S. / Bogdanov, M. V. et al. | 2005
- 251
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A Short Synopsis of the Current Status of Porous SiC and GaNShishkin, Y. / Ke, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2005
- 257
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Preparation of Porous 4H-SiC by Surface AnodizationChen, Y. / Shoji, S. / Sugishita, S. / Ohshima, S. / Nishino, S. et al. | 2005
- 261
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Optical Spectroscopy as a Tool for Observation of Porous SiC GraphitizationShuman, V. B. / Savkina, N. S. et al. | 2005
- 265
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X-Ray Diffraction Analysis of Epigrowth on Porous 4H-SiC SubstratesShulpina, I. L. / Savkina, N. S. / Shuman, V. B. / Ratnikov, V. V. / Syvajarvi, M. / Yakimova, R. et al. | 2005
- 269
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On Current Limitations in Porous SiC ApplicationsMynbaeva, M. / Lavrent ev, A. / Kotousova, I. / Volkova, A. / Mynbaev, K. / Lebedev, A. et al. | 2005
- 273
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Interface Defects in n-Type 3C-SiC/SiO~2: An EPR Study of Oxidized Porous Silicon Carbide Single Crystalsvon Bardeleben, H. J. / Cantin, J. L. / Ke, L. / Shishkin, Y. / Devaty, R. P. / Choyke, W. J. et al. | 2005
- 277
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Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiCvon Bardeleben, H. J. / Cantin, J. L. / Vickridge, I. / Song, Y. / Dhar, S. / Feldman, L. C. / Williams, J. R. / Ke, L. / Shishkin, Y. / Devaty, R. P. et al. | 2005
- 283
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Development of a KOH Defect Etching Furnace with Absolute In Situ Temperature Measurement CapabilitySakwe, S. A. / Herro, Z. G. / Wellmann, P. J. et al. | 2005
- 287
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Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman StudiesColder, H. / Morales, M. / Rizk, R. / Vickridge, I. et al. | 2005
- 291
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RBS-Channeling and EPR Studies of Damage in 2 MeV Al^2^+-Implanted 6H-SiC SubstratesMorilla, Y. / Lopez, J. G. / Battistig, G. / Cantin, J. L. / Cheang-Wong, J. C. / von Bardeleben, H. J. / Respaldiza, M. A. et al. | 2005
- 295
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Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase EpitaxyFerro, G. / Panknin, D. / Polychroniadis, E. K. / Monteil, Y. / Skorupa, W. / Stoemenos, J. et al. | 2005
- 299
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Dynamical Study of Dislocations and 4H → 3C Transformation Induced by Stress in (1120) 4H-SiCIdrissi, H. / Lancin, M. / Douin, J. / Regula, G. / Pichaud, B. et al. | 2005
- 303
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Pressure Effect on the Elastic Properties of SiC PolytypesDavydov, S. Y. et al. | 2005
- 307
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[0115] Grown 6H-SiC Bulk Crystals Investigated by High Energy Triple Axis X-Ray DiffractionSeitz, C. / Herro, Z. G. / Epelbaum, B. M. / Winnacker, A. / Hock, R. / Magerl, A. et al. | 2005
- 311
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XRDT Study of Structural Defects of 6H-SiC CrystalsAgrosi, G. / Fregola, R. A. / Monno, A. / Scandale, E. / Tempesta, G. et al. | 2005
- 315
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Defect Characterization of 4H-SiC Bulk Crystals Grown on Micropipe Filled Seed CrystalsKato, T. / Kojima, K. / Nishizawa, S. I. / Arai, K. et al. | 2005
- 319
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PVT-Growth and Characterization of Single Crystalline 3C-SiC on a (0001) 6H-SiC SubstratePolychroniadis, E. K. / Mantzari, A. / Freudenberg, A. / Wollweber, J. / Nitschke, R. / Frank, T. / Pensl, G. / Schoner, A. et al. | 2005
- 323
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Structure of In-Grown Stacking Faults in the 4H-SiC Epitaxial LayersIzumi, S. / Tsuchida, H. / Tawara, T. / Kamata, I. / Izumi, K. et al. | 2005
- 327
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Investigation of Stacking Fault Formation in Hydrogen Bombarded 4H-SiCGaleckas, A. / Nielsen, H. K. / Linnros, J. / Hallen, A. / Svensson, B. G. / Pirouz, P. et al. | 2005
- 331
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Intensity Ratio of the Doublet Signature of Excitons Bound to 3C-SiC Stacking Faults in a 4H-SiC MatrixCamassel, J. / Juillaguet, S. et al. | 2005
- 335
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Specific Aspects of Type II Heteropolytype Stacking Faults in SiCJuillaguet, S. / Camassel, J. et al. | 2005
- 341
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Optical Characterization of Deep Level Defects in SiCMagnusson, B. / Janzen, E. et al. | 2005
- 347
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Optical Centres with Local Vibrational Modes Created by High Temperature Annealing of Electron Irradiated 4H and 6H Silicon CarbideSteeds, J. W. / Furkert, S. A. / Sullivan, W. / Hayes, J. M. / Wright, N. G. et al. | 2005
- 351
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Hyperfine Interaction of Nitrogen Donor in 4H-SiC Studied by Pulsed-ENDORSon, N. T. / Isoya, J. / Yamasaki, S. / Janzen, E. et al. | 2005
- 355
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Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTSDanno, K. / Kimoto, T. / Matsunami, H. et al. | 2005
- 359
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Electronic Levels Induced by Irradiation in 4H-Silicon CarbideCastaldini, A. / Cavallini, A. / Rigutti, L. / Nava, F. et al. | 2005
- 365
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Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiCAlfieri, G. / Monakhov, E. V. / Linnarsson, M. K. / Svensson, B. G. et al. | 2005
- 369
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Recombination Enhanced Defect Annealing in 4H-SiCStorasta, L. / Carlsson, F. H. C. / Bergman, J. P. / Janzen, E. et al. | 2005
- 373
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Room Temperature Steady State and Time Resolved PL Characterization of Ion Irradiation Induced Defects in 6H-SiCReitano, R. / Zimbone, M. / Musumeci, P. / Baeri, P. et al. | 2005
- 377
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Comparative Study of 4H-SiC Irradiated with Neutrons and Heavy IonsKalinina, E. / Kholuyanov, G. / Onushkin, G. / Davydov, D. / Strel chuk, A. / Konstantinov, A. / Hallen, A. / Skuratov, V. / Kuznetsov, A. et al. | 2005
- 381
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Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor DepositionKato, M. / Tanaka, S. / Ichimura, M. / Arai, E. / Nakamura, S. / Kimoto, T. et al. | 2005
- 385
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Direct Experimental Comparison of the Effects of Electron Irradiation on the Charge Carrier Removal Rate in n-Type Silicon and Silicon CarbideKozlovski, V. V. / Bogdanova, E. V. / Emtsev, V. V. / Emtsev, K. V. / Lebedev, A. A. / Lomasov, V. N. et al. | 2005
- 389
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Study of Ion Induced Damage in 4H-SiCGiudice, A. L. / Olivero, P. / Fizzotti, F. / Manfredotti, C. / Vittone, E. / Bianco, S. / Bertuccio, G. / Casiraghi, R. / Jaksic, M. et al. | 2005
- 393
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Micro-Optical Characterization Study of Highly p-Type Doped SiC:Al WafersWellmann, P. J. / Muller, R. / Pons, M. / Thuaire, A. / Crisci, A. / Mermoux, M. / Auvray, L. et al. | 2005
- 397
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Improved Resolution of Epitaxial Thin Film Doping Using FTIR Reflectance SpectroscopyMazzola, M. S. / Sunkari, S. G. / Mazzola, J. P. / Das, H. / Melnychuk, G. / Koshka, Y. / Wyatt, J. L. / Zhang, J. et al. | 2005
- 401
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Electrical Properties of p-Type In Situ Doped vs. Al-Implanted 4H-SiCPernot, J. / Contreras, S. / Camassel, J. / Robert, J. L. et al. | 2005
- 405
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Characterization of 4H-SiC Epitaxial Layers by Microwave Photoconductivity DecayKumar, R. J. / Losee, P. A. / Li, C. / Seiler, J. / Bhat, I. B. / Chow, T. P. / Borrego, J. M. / Gutmann, R. J. et al. | 2005
- 409
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Nonequilibrium Carrier Diffusion and Recombination in Heavily-Doped and Semi-Insulating Bulk HTCVD Grown 4H-SiC CrystalsStorasta, L. / Aleksiejunas, R. / Sudzius, M. / Kadys, A. / Malinauskas, T. / Jarasiunas, K. / Magnusson, B. / Janzen, E. et al. | 2005
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Optical Studies of Nonequilibrium Carrier Dynamics in Highly Excited 4H-SiC Epitaxial LayersNeimontas, K. / Aleksiejunas, R. / Sudzius, M. / Jarasiunas, K. / Bergman, J. P. et al. | 2005
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Comparison of Electrically and Optically Determined Minority Carrier Lifetimes in 6H-SiCReshanov, S. A. / Pensl, G. et al. | 2005
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Electrical Characterization of Heavily Al Doped 4H-SiC Layer Grown by Vapor-Liquid-Solid Epitaxy in Al-Si MeltGodignon, P. / Jacquier, C. / Blanque, S. / Montserrat, J. / Ferro, G. / Contreras, S. / Zielinski, M. / Monteil, Y. et al. | 2005
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Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiCCiechonski, R. R. / Porro, S. / Syvajarvi, M. / Yakimova, R. et al. | 2005
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Effects of Epitaxial Layer Growth Parameters on the Defect Density and on the Electrical Characteristics of Schottky DiodesLa Via, F. / Roccaforte, F. / Di Franco, S. / Ruggiero, A. / Neri, L. / Reitano, R. / Calcagno, L. / Foti, G. / Mauceri, M. / Leone, S. et al. | 2005
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Infrared Gratings Based on SiC/Si-HeterostructuresRockstuhl, C. / Herzig, H. P. / Forster, C. / Leycuras, A. / Ambacher, O. / Pezoldt, J. et al. | 2005
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Characterization of 4H-SiC PiN Diodes by Micro-Raman Scattering and PhotoemissionThuaire, A. / Mermoux, M. / Crisci, A. / Camara, N. / Bano, E. / Baillet, F. / Pernot, E. et al. | 2005
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Hall Effect in the Channel of 3C-SiC MOSFETsKrieger, M. / Pensl, G. / Bakowski, M. / Schoner, A. / Nagasawa, H. / Abe, M. et al. | 2005
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Photoluminescence Study of In Situ Rare Earth Doped PVT-Grown SiC Single CrystalsSchmitt, H. / Muller, R. / Maier, M. / Winnacker, A. / Wellmann, P. et al. | 2005
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Excitation Power Dependence of Al-Related Features in the LTPL Spectra of 4H-SiCZielinski, M. / Balloud, C. / Juillaguet, S. / Boyer, B. / Souliere, V. / Camassel, J. et al. | 2005
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Concentration of N and P in SiC Investigated by Time-Of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS)Acarturk, T. / Semmelroth, K. / Pensl, G. / Saddow, S. E. / Starke, U. et al. | 2005
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Materials Characterization and Modeling of SiC in Europe - From the Viewpoint of a TheoristDeak, P. et al. | 2005
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A New Model for the D~1-Luminescence in 6H-SiCRauls, E. / Gerstmann, U. / Pinheiro, M. V. B. / Greulich-Weber, S. / Spaeth, J. M. et al. | 2005
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Observation of Vacancy Clusters in HTCVD Grown SiCAavikko, R. / Saarinen, K. / Magnusson, B. / Janzen, E. et al. | 2005
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Electron Irradiation Induced Vacancy Defects Detected by Positron Annihilation in 6H-SiCBarthe, M. F. / Henry, L. / Arpiainen, S. / Blondiaux, G. et al. | 2005
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The V~S~iC~S~i(Si~CC~S~i) Complex in Electron-Irradiated 6H-SiCPinheiro, M. V. B. / Rauls, E. / Gerstmann, U. / Greulich-Weber, S. / Spaeth, J. M. et al. | 2005
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The Role of Nitrogen in the Annealing of Vacancies in 4H-SiCDannefaer, S. / Avalos, V. / Yakimova, R. et al. | 2005
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Defect Evolution in Ion Irradiated 6H-SiC Epitaxial LayersRuggiero, A. / Zimbone, M. / Roccaforte, F. / Libertino, S. / La Via, F. / Reitano, R. / Calcagno, L. et al. | 2005
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High-Temperature Stable Multi-Defect Clusters in Neutron Irradiated Silicon Carbide: Electron Paramagnetic Resonance StudyIlyin, I. V. / Muzafarova, M. V. / Mokhov, E. N. / Konnikov, S. G. / Baranov, P. G. et al. | 2005
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Evolution of Defect and Hydrogen-Related Low Temperature Photoluminescence Spectra with Annealing for Hydrogen or Helium Implanted 6H SiCYan, F. / Devaty, R. P. / Choyke, W. J. / Gali, A. / Schmid, F. / Pensl, G. / Wagner, G. et al. | 2005
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M-Center in Low-Dose Proton Implanted 4H-SiC; Bistability and Change in Emission RateNielsen, H. K. / Hallen, A. / Martin, D. M. / Svensson, B. G. et al. | 2005
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Ab Initio Calculation of Shallow Defects: Results for P-Related Donors in SiCGerstmann, U. / Rauls, E. / Overhof, H. / Frauenheim, T. et al. | 2005
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Probing of the Wave Function of Shallow Donors and Acceptors by EPR in SiC Crystals with Changed Isotopic CompositionMuzafarova, M. V. / Ilyin, I. V. / Mokhov, E. N. / Baranov, P. G. / Ber, B. Y. / Ionov, A. N. / Kop ev, P. S. / Kaliteevskii, M. A. / Godisov, O. N. / Kaliteevskii, A. K. et al. | 2005
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Effective-Mass Theory of Shallow Donors in 4H-SiCIvanov, I. G. / Stelmach, A. / Kleverman, M. / Janzen, E. et al. | 2005
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Electron Paramagnetic Resonance of Shallow Phosphorous Centers in 4H- and 6H-SiCSon, N. T. / Henry, A. / Isoya, J. / Janzen, E. et al. | 2005
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Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U DefectsGali, A. / Hornos, T. / Deak, P. / Son, N. T. / Janzen, E. / Choyke, W. J. et al. | 2005
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Ab Initio Study of Dopant Interstitials in 4H-SiCMattausch, A. / Bockstedte, M. / Pankratov, O. et al. | 2005
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Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiCBockstedte, M. / Mattausch, A. / Pankratov, O. et al. | 2005
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3d-Transition Metals in Cubic and Hexagonal Silicon CarbideMachado, W. V. M. / Justo, J. F. / Assali, L. V. C. et al. | 2005
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Hydrogen-Saturated SiC-Surfaces: Model Systems for Studies of Passivation, Reconstruction and Interface FormationSeyller, T. et al. | 2005
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First Principles Simulations of SiC-Based InterfacesCatellani, A. / Cicero, G. / Righi, M. C. / Pignedoli, C. A. et al. | 2005
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Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1100)Emtsev, K. V. / Seyller, T. / Ley, L. / Tadich, A. / Broekman, L. / Huwald, E. / Riley, J. D. / Leckey, R. G. C. et al. | 2005
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Electrical Characterization of Defects in p-Type SiC Using Recombination Induced Conductivity InversionKrishnan, B. / Koshka, Y. et al. | 2005
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Analysis of SiC Islands Formation during First Steps of Si Carbonization ProcessMendez, D. / Aouni, A. / Araujo, D. / Bustarret, E. / Ferro, G. / Monteil, Y. et al. | 2005
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ALD Deposited Al~2O~3 Films on 6H-SiC(0001) after Annealing in Hydrogen AtmosphereGao, K. Y. / Seyller, T. / Emtsev, K. / Ley, L. / Ciobanu, F. / Pensl, G. et al. | 2005
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SiC/SiO~2 Interface States: Properties and ModelsAfanas ev, V. V. / Ciobanu, F. / Dimitrijev, S. / Pensl, G. / Stesmans, A. et al. | 2005
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The Search for Near Interface Oxide Traps - First-Principles Calculations on Intrinsic SiO~2 DefectsKnaup, J. M. / Deak, P. / Gali, A. / Hajnal, Z. / Frauenheim, T. / Choyke, J. W. et al. | 2005
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Interface States in SiO~2/4H-SiC(0001) Interfaces from First-Principles: Effects of Si-Si Bonds and of Nitrogen Atom TerminationOhnuma, T. / Tsuchida, H. / Jikimoto, T. / Miyashita, A. / Yoshikawa, M. et al. | 2005
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Structural and Electronic Properties of Si~1~-~xC~xO~2Justo, J. F. / da Silva, C. R. S. / Pereyra, I. / Assali, L. V. C. et al. | 2005
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-
Surface and Interface Studies of Si-Rich 4H-SiC and SiO~2Virojanadara, C. / Johansson, L. I. et al. | 2005
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Characterization of Oxide Films on SiC Epitaxial (0001) Faces by Angle-Resolved Photoemission Spectroscopy Measurements Using Synchrotron RadiationHijikata, Y. / Yaguchi, H. / Yoshida, S. / Takata, Y. / Kobayashi, K. / Shin, S. / Nohira, H. / Hattori, T. et al. | 2005
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Characterization of SiC Passivation Using MOS Capacitor Ultraviolet-Induced HysteresisMatocha, K. / Tucker, J. / Kaminsky, E. et al. | 2005
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Observation of Deep Level Centers in 4H and 6H Silicon Carbide Metal Oxide Semiconductor Field Effect TransistorsMeyer, D. J. / Dautrich, M. S. / Lenahan, P. M. / Lelis, A. et al. | 2005
- 599
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Technological Aspects of Ion Implantation in SiC Device ProcessesNegoro, Y. / Kimoto, T. / Matsunami, H. et al. | 2005
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Fabrication of Compact Ion Implanter for Silicon Carbide DevicesMitani, S. / Yamaguchi, S. / Furukawa, S. / Nakata, T. / Horino, Y. / Ono, R. / Hosokawa, Y. / Miyamoto, M. / Nishino, S. et al. | 2005
- 609
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Development of the Novel Electron Bombardment Anneal System (EBAS) for SiC Post Ion Implantation AnnealShibagaki, M. / Kurematsu, Y. / Watanabe, F. / Haga, S. / Miura, K. / Suzuki, T. / Satoh, M. et al. | 2005
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Aluminum Implantation Induced Linear Surface Faults in 4H-SiCWright, N. G. / Vassilevski, K. V. / Nikitina, I. / Horsfall, A. B. / Johnson, C. M. / Bhatnagar, P. / Tappin, P. et al. | 2005
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Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature AnnealingNegoro, Y. / Kimoto, T. / Matsunami, H. et al. | 2005
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Annealing of Aluminum Implanted 4H-SiC: Comparison of Furnace and Lamp AnnealingRambach, M. / Bauer, A. J. / Frey, L. / Friedrichs, P. / Ryssel, H. et al. | 2005
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-
Ar Annealing at 1600^oC and 1650^oC of Al^+ Implanted p^+/n 4H-SiC Diodes: Analysis of the J-V Characteristics Versus Annealing TemperatureBergamini, F. / Moscatelli, F. / Canino, M. / Poggi, A. / Nipoti, R. et al. | 2005
- 629
-
J-V Characteristics of Al^+ Ion Implanted p^+/n 4H-SiC Diodes Annealed in Silane Ambient at 1600^oCBergamini, F. / Rao, S. P. / Saddow, S. E. / Nipoti, R. et al. | 2005
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P-Type SiC Layers Formed by VLS Induced Selective Epitaxial GrowthLazar, M. / Jacquier, C. / Dubois, C. / Raynaud, C. / Ferro, G. / Planson, D. / Brosselard, P. / Monteil, Y. / Chante, J. P. et al. | 2005
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Ion Beam Analysis and Computer Simulation of Damage Accumulation in Nitrogen Implanted 6H-SiC: Effects of ChannelingZolnai, Z. / Ster, A. / Khanh, N. Q. / Kotai, E. / Posselt, M. / Battistig, G. / Lohner, T. / Gyulai, J. et al. | 2005
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Experimental Evidence for an Electrically Neutral (N-Si)-Complex Formed during the Annealing Process of Si^+-/N^+-Co-Implanted 4H-SiCSchmid, F. / Frank, T. / Pensl, G. et al. | 2005
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Homogeneity of Nitrogen and Phosphorus Co-Implants in 4H-SiC: Full Wafer Scale InvestigationBlanque, S. / Lyonnet, J. / Camassel, J. / Perez, R. / Terziyska, P. / Contreras, S. / Godignon, P. / Mestres, N. / Pascual, J. et al. | 2005
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n^+/p Diodes Realized in SiC by Phosphorus Ion Implantation: Electrical Characterization as a Function of TemperatureCanino, M. / Castaldini, A. / Cavallini, A. / Moscatelli, F. / Nipoti, R. / Poggi, A. et al. | 2005
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Study of Carbon in Thermal Oxide Formed on 4H-SiC by XPSZhao, P. / Rusli / Xia, J. H. / Tan, C. M. / Liu, Y. / Tin, C. C. / Yoon, S. F. / Zhu, W. G. / Ahn, J. et al. | 2005
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The Role of Formation and Dissolution of C Clusters on the Oxygen Incorporation during Dry Thermal Oxidation of 6H-SiCRadtke, C. / Baumvol, I. J. R. / Ferrera, B. C. / Stedile, F. C. et al. | 2005
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Effects of Dislocations on Reliability of Thermal Oxides Grown on n-Type 4H-SiC WaferSenzaki, J. / Kojima, K. / Kato, T. / Shimozato, A. / Fukuda, K. et al. | 2005
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Competition between Oxidation and Recrystallization in Ion Amorphized (0001) 6H-SiCPoggi, A. / Parisini, A. / Solmi, S. / Nipoti, R. et al. | 2005
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High Temperature Rapid Thermal Oxidation and Nitridation of 4H-SiC in Diluted N~2O and NO AmbientKosugi, R. / Fukuda, K. / Arai, K. et al. | 2005
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-
4H-SiC MOS Structures Fabricated from RTCVD Si Layers Oxidized in Diluted N~2OPerez-Tomas, A. / Tournier, D. / Godignon, P. / Mestres, N. / Millan, J. et al. | 2005
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High-Reliability ONO Gate Dielectric for Power MOSFETsTanimoto, S. / Tanaka, H. / Hayashi, T. / Shimoida, Y. / Hoshi, M. / Mihara, T. et al. | 2005
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-
An In Situ Post Growth Annealing Process for the Improvement of 4H-SiC/SiO~2 MOS Interface Prepared by CVD Using TEOS, and its Characteristic StudyRamanujam, K. / Furuichi, H. / Taguchi, K. / Yukumoto, S. / Nishino, S. et al. | 2005
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High Temperature NO Annealing of Deposited SiO~2 and SiON Films on N-Type 4H-SiCYano, H. / Hatayama, T. / Uraoka, Y. / Fuyuki, T. et al. | 2005
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Characteristics of Post-Nitridation Rapid-Thermal Annealed Gate Oxide Grown on 4H-SiCCheong, K. Y. / Bahng, W. / Kim, N. K. et al. | 2005
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Low Density of Interface States in n-Type 4H-SiC MOS Capacitors Achieved by Nitrogen ImplantationCiobanu, F. / Pensl, G. / Afanas ev, V. / Schoner, A. et al. | 2005
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-
Effects of N~2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide ReliabilityFujihira, K. / Tarui, Y. / Ohtsuka, K. I. / Imaizumi, M. / Takami, T. et al. | 2005
- 701
-
Characterization of Aluminum and Titanium Oxides Deposited on 4H-SiC by Atomic Layer Deposition TechniqueWolborski, M. / Bakowski, M. / Pore, V. / Ritala, M. / Leskela, M. / Schoner, A. / Hallen, A. et al. | 2005
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Electrical Properties of Aluminum Oxide Films Grown by Atomic Layer Deposition on n-Type 4H-SiCAvice, M. / Grossner, U. / Monakhov, E. V. / Grillenberger, J. / Nilsen, O. / Fjellvag, H. / Svensson, B. G. et al. | 2005
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Characterization of 4H-SiC MOS Structures with Al~2O~3 as Gate DielectricPaskaleva, A. / Ciechonski, R. R. / Syvajarvi, M. / Atanassova, E. / Yakimova, R. et al. | 2005
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4H-SiC MOSFETs Using Thermal Oxidized Ta~2Si Films as High-k Gate DielectricPerez-Tomas, A. / Godignon, P. / Mestres, N. / Montserrat, J. / Millan, J. et al. | 2005
- 717
-
Characterization of Polyimide Dielectric Layer for the Passivation of High Electric Field and High Temperature Silicon Carbide Power DevicesZelmat, S. / Locatelli, M. L. / Lebey, T. et al. | 2005
- 721
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Improvement in Electrical Performance of Schottky Contacts for High-Voltage DiodeNakamura, T. / Miyanagi, T. / Tsuchida, H. / Kamata, I. / Jikimoto, T. / Izumi, K. et al. | 2005
- 725
-
Surface Preparation of 6H-SiC Substrates by Electron Beam AnnealingAgueev, O. A. / Avdeev, S. P. / Svetlichnyi, A. M. / Konakova, R. V. / Milenin, V. V. / Lytvyn, P. M. / Lytvyn, O. S. / Okhrimenko, O. B. / Soloviev, S. I. / Sudarshan, T. S. et al. | 2005
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Ion-Beam Induced Modifications of Titanium Schottky Barrier on 4H-SiCRoccaforte, F. / Giannazzo, F. / Bongiorno, C. / Libertino, S. / La Via, F. / Raineri, V. et al. | 2005
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Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiCFerrero, S. / Albonico, A. / Meotto, U. M. / Rambola, G. / Porro, S. / Giorgis, F. / Perrone, D. / Scaltrito, L. / Bontempi, E. / Depero, L. E. et al. | 2005
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Ni-Silicide Contacts to 6H-SiC: Contact Resistivity and Barrier Height on Ion Implanted n-Type and Barrier Height on p-Type EpilayerMoscatelli, F. / Scorzoni, A. / Poggi, A. / Canino, M. / Nipoti, R. et al. | 2005
- 741
-
Nucleation and Reaction of Ag on 4H-SiC(0001)Soubatch, S. / Starke, U. et al. | 2005
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-
Characterization of Electrical Contacts on Polycrystalline 3C-SiC Thin FilmsCastaldini, A. / Cavallini, A. / Rossi, M. / Cocuzza, M. / Ricciardi, C. et al. | 2005
- 749
-
Effect of the Metal Composition on the Electrical and Thermal Properties of Au/Pd/Ti/Pd Contacts to p-Type SiCKolaklieva, L. / Kakanakov, R. / Marinova, T. / Lepoeva, G. et al. | 2005
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Step Structures Produced by Hydrogen Etching of Initially Step-Free (0001) 4H-SiC MesasPowell, J. A. / Neudeck, P. G. / Trunek, A. J. / Abel, P. B. et al. | 2005
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Reduction of Fluoride Species and Surface Roughness by H~2 Gas Addition in SiC Dry EtchingMikami, H. / Horie, Y. / Hatayama, T. / Yano, H. / Uraoka, Y. / Fuyuki, T. et al. | 2005
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-
Structure and Morphology of 4H-SiC Wafer Surfaces after H~2-EtchingSoubatch, S. / Saddow, S. E. / Rao, S. P. / Lee, W. Y. / Konuma, M. / Starke, U. et al. | 2005
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Reactive Ion Etching Induced Surface Damage of Silicon CarbideXia, J. H. / Rusli / Gopalakrishan, R. / Choy, S. F. / Tin, C. C. / Ahn, J. / Yoon, S. F. et al. | 2005
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The Reactive Neutral Beam Etching of SiC and its Application in p-n Junction Periphery ProtectionSarov, G. / Cholakova, T. / Kakanakov, R. et al. | 2005
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Forward-Bias Degradation in 4H-SiC p^+nn^+ Diodes: Influence of the Mesa EtchingCamara, N. / Thuaire, A. / Bano, E. / Zekentes, K. et al. | 2005
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Trench Formation on Ion Implanted SiC Surfaces after Thermal OxidationBahng, W. / Song, G. H. / Kim, N. K. / Kim, S. C. / Kim, H. W. / Seo, K. S. / Kim, E. D. et al. | 2005
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Metal Bonding in SiC Based SubstratesMatko, I. / Chenevier, B. / Madar, R. / Roussel, H. / Coindeau, S. / Letertre, F. / Richtarch, C. / Di Cioccio, L. et al. | 2005
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-
SiC Power Device Packaging Technologies for 300 to 350^oC ApplicationsJohnson, R. W. / Williams, J. et al. | 2005
- 793
-
Numerical Simulation and Optimization for 900V 4H-SiC DiMOSFET FabricationKim, S. C. / Bahng, W. / Kim, N. K. / Kim, E. D. / Ayalew, T. / Grasser, T. / Selberherr, S. et al. | 2005
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-
4H-SiC DMOSFETs for High Speed Switching ApplicationsRyu, S. H. / Krishnaswami, S. / Das, M. / Richmond, J. / Agarwal, A. / Palmour, J. / Scofield, J. et al. | 2005
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Realisation of large area 3C-SiC MOSFETsSchöner, Adolf / Bakowski, Mietek / Ericsson, Per / Strömberg, Helena / Nagasawa, Hiroyuki / Abe, Masayuki et al. | 2005
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-
Realization of Large Area 3C-SiC MOSFETsSchoner, A. / Bakowski, M. / Ericsson, P. / Stromberg, H. / Nagasawa, H. / Abe, M. et al. | 2005
- 805
-
4H-SiC Lateral RESURF MOSFETs on Carbon-Face SubstratesOkamoto, M. / Suzuki, S. / Kato, M. / Yatsuo, T. / Fukuda, K. et al. | 2005
- 809
-
Dose Designing for High-Voltage 4H-SiC RESURF MOSFETs - Device Simulation and FabricationKawano, H. / Kimoto, T. / Suda, J. / Matsunami, H. et al. | 2005
- 813
-
Analysis of Low On-Resistance in 4H-SiC Double-Epitaxial MOSFETHarada, S. / Okamoto, M. / Yatsuo, T. / Fukuda, K. / Arai, K. et al. | 2005
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-
Low On-Resistance in Normally-Off 4H-SiC Accumulation MOSFETOkuno, E. / Endo, T. / Matsuki, H. / Sakakibara, T. / Tanaka, H. et al. | 2005
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-
Short-Channel Effects in 4H-SiC MOSFETsNoborio, M. / Kanzaki, Y. / Suda, J. / Kimoto, T. / Matsunami, H. et al. | 2005
- 825
-
Performance of SiC Cascode Switches with Si MOS GateBrezeanu, G. / Boianceanu, C. / Brezeanu, M. / Mihaila, A. / Udrea, F. / Amaratunga, G. et al. | 2005
- 829
-
Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel DopingHatakeyama, T. / Watanabe, T. / Senzaki, J. / Kato, M. / Fukuda, K. / Shinohe, T. / Arai, K. et al. | 2005
- 833
-
Field Effect Mobility in n-Channel Si Face 4H-SiC MOSFET with Gate Oxide Grown on Aluminum Ion-Implanted MaterialGudjonsson, G. / Olafsson, H. O. / Allerstam, F. / Nilsson, P. A. / Sveinbjornsson, E. O. / Rodle, T. / Jos, R. et al. | 2005
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High Field Effect Mobility in 6H-SiC MOSFET with Gate Oxides Grown in Alumina EnvironmentAllerstam, F. / Gudjonsson, G. / Olafsson, H. O. / Sveinbjornsson, E. O. / Rodle, T. / Jos, R. et al. | 2005
- 841
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High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial MaterialSveinbjornsson, E. O. / Olafsson, H. O. / Gudjonsson, G. / Allerstam, F. / Nilsson, P. A. / Syvajarvi, M. / Yakimova, R. / Hallin, C. / Rodle, T. / Jos, R. et al. | 2005
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Modeling of Lattice Site-Dependent Incomplete Ionization in alpha-SiC DevicesAyalew, T. / Grasser, T. / Kosina, H. / Selberherr, S. et al. | 2005
- 849
-
Physical Simulation of Drain-Induced Barrier Lowering Effect in SiC MESFETsZhu, C. L. / Rusli / Almira, J. / Tin, C. C. / Yoon, S. F. / Ahn, J. et al. | 2005
- 853
-
High Power Lateral Epitaxy MESFET Technology in Silicon CarbideKonstantinov, A. O. / Harris, C. I. / Ray, I. C. et al. | 2005
- 857
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Broadband RF SiC MESFET Power AmplifiersJonsson, R. / Rudner, S. et al. | 2005
- 861
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Important Role of Parasitic Regions in Electrical Characteristics of SiC MESFETsCha, H. Y. / Choi, Y. C. / Eastman, L. F. / Spencer, M. G. / Ardaravicius, L. / Matulionis, A. / Kiprijanovic, O. et al. | 2005
- 865
-
Hole-Like Defects in n-Channel 4H-SiC MESFETs Observed by Current Transient SpectroscopyBluet, J. M. / Gassoumi, M. / Dermoul, I. / Chekir, F. / Maaref, H. / Guillot, G. / Morvan, E. / Dua, C. / Brylinski, C. et al. | 2005
- 869
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High-Purity Versus High-Defect-Density Semiinsulating Substrates for SiC MESFET: Simulation of Device CharacteristicsKoshka, Y. / Sankin, I. et al. | 2005
- 873
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Wannier-Stark Localization Effects in 6H-SiC JFETsSankin, V. I. / Shkrebiy, P. P. / Lebedev, A. A. et al. | 2005
- 877
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Effective Edge Termination Design in SiC VJFETBhatnagar, P. / Horsfall, A. B. / Wright, N. G. / O Neill, A. G. / Vassilevski, K. V. / Johnson, C. M. et al. | 2005
- 881
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Electrical Characteristics Temperature Dependence of 600V-Class Deep Implanted Gate Vertical JFETMizukami, M. / Takikawa, O. / Imai, S. / Kinoshita, K. / Hatakeyama, T. / Domon, T. / Shinohe, T. et al. | 2005
- 885
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Gamma and Proton Irradiation Effects on 4H-SiC Depletion-Mode Trench JFETsMerrett, J. N. / Williams, J. R. / Cressler, J. D. / Sutton, A. / Cheng, L. / Bondarenko, V. / Sankin, I. / Seale, D. / Mazzola, M. S. / Krishnan, B. et al. | 2005
- 889
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Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface StatesDomeij, M. / Danielsson, E. / Lee, H. S. / Zetterling, C. M. / Ostling, M. et al. | 2005
- 893
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BV~C~E~O Versus BV~C~B~O for 4H and 6H Polytype SiC Bipolar Junction TransistorsBalachandran, S. / Chow, T. P. / Agarwal, A. / Scozzie, S. / Jones, K. A. et al. | 2005
- 897
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Electrical Characteristics of 4H-SiC BJTs at Elevated TemperaturesLee, H. S. / Domeij, M. / Danielsson, E. / Zetterling, C. M. / Ostling, M. et al. | 2005
- 901
-
1000 V, 30 A SiC Bipolar Junction Transistors and Integrated Darlington PairsKrishnaswami, S. / Agarwal, A. / Capell, C. / Richmond, J. / Ryu, S. H. / Palmour, J. / Balachandran, S. / Chow, T. P. / Bayne, S. / Geil, B. et al. | 2005
- 905
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A 4H-SiC BJT with an Epitaxially Regrown Extrinsic Base LayerDanielsson, E. / Domeij, M. / Lee, H. S. / Zetterling, C. M. / Ostling, M. / Schoner, A. / Hallin, C. et al. | 2005
- 909
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Low and High Temperature Performance of 600V 4H-SiC Epitaxial Emitter BJTsBalachandran, S. / Chow, T. P. / Agarwal, A. et al. | 2005
- 913
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Optimization of Heterostructure Bipolar Transistors in SiCChen, C. C. / Horsfall, A. B. / Wright, N. G. / O Neill, A. G. et al. | 2005
- 917
-
Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)Zhu, L. / Balachandran, S. / Chow, T. P. et al. | 2005
- 921
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Process and Device Simulation of a SiC Floating Junction Schottky Barrier Diode (Super-SBD)Hatakeyama, T. / Nishio, J. / Shinohe, T. et al. | 2005
- 925
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Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term ReliabilityRupp, R. / Treu, M. / Turkes, P. / Beermann, H. / Scherg, T. / Preis, H. / Cerva, H. et al. | 2005
- 929
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Temperature Impact on High-Current 1.2kV SiC Schottky RectifiersJorda, X. / Tournier, D. / Rebollo, J. / Millan, J. / Godignon, P. et al. | 2005
- 933
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Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier HeightsPierobon, R. / Meneghesso, G. / Zanoni, E. / Roccaforte, F. / La Via, F. / Raineri, V. et al. | 2005
- 937
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Planar Schottky Microwave Diodes on 4H-SiCSudow, M. / Rorsman, N. / Nilsson, P. A. / Zirath, H. et al. | 2005
- 941
-
Design, Fabrication and Characterization of 1.5 mOmegacm^2, 800 V 4H-SiC n-Type Schottky Barrier DiodesFurno, M. / Bonani, F. / Ghione, G. / Ferrero, S. / Porro, S. / Mandracci, P. / Scaltrito, L. / Perrone, D. / Richieri, G. / Merlin, L. et al. | 2005
- 945
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Temperature Dependence of 4H-SiC JBS and Schottky Diodes after High Temperature Treatment of Contact MetalPerez, R. / Mestres, N. / Tournier, D. / Jorda, X. / Vellvehi, M. / Godignon, P. et al. | 2005
- 949
-
Numerical Analysis of SiC Merged PiN Schottky DiodesAyalew, T. / Kim, S. C. / Grasser, T. / Selberherr, S. et al. | 2005
- 953
-
New High-Voltage Unipolar Mode p^+ Si/n^- 4H-SiC Heterojunction DiodeHayashi, T. / Tanaka, H. / Shimoida, Y. / Tanimoto, S. / Hoshi, M. et al. | 2005
- 957
-
SiC Super Junction Power Devices: Modeling and AnalysisShen, Z. J. / Cheng, X. / Kang, B. / So, K. / Hshieh, I. et al. | 2005
- 961
-
Electrical Characteristics and Reliability of 4H-SiC PiN Diodes Fabricated on In-House Grown and Commercial Epitaxial FilmsLosee, P. A. / Li, C. / Seiler, J. / Stahlbush, R. E. / Chow, T. P. / Bhat, I. B. / Gutmann, R. J. et al. | 2005
- 965
-
Drift-Free, 50 A, 10 kV 4H-SiC PiN Diodes with Improved Device YieldsDas, M. K. / Sumakeris, J. J. / Hull, B. A. / Richmond, J. / Krishnaswami, S. / Powell, A. R. et al. | 2005
- 969
-
8.3 kV 4H-SiC PiN Diode on (0001) C-Face with Small Forward Voltage DegradationNakayama, K. / Sugawara, Y. / Tsuchida, H. / Miyanagi, T. / Kamata, I. / Nakamura, T. / Asano, K. / Ishii, R. et al. | 2005
- 973
-
Steady-State and Transient Characteristics of High-Voltage 4H-SiC Junction DiodesIvanov, P. A. / Levinshtein, M. E. / Mnatsakanov, T. T. / Palmour, J. W. / Singh, R. / Irvin, K. G. / Das, M. et al. | 2005
- 977
-
Large Area, Avalanche-Stable 4H-SiC PiN Diodes with V~B~R > 4.5 kVPeters, D. / Elpelt, R. / Schorner, R. / Dohnke, K. O. / Friedrichs, P. / Stephani, D. et al. | 2005
- 981
-
Demonstration of High-Power X-Band Oscillation in p^+/n^-/n^+ 4H-SiC IMPATT Diodes with Guard-Ring TerminationOno, S. / Arai, M. / Kimura, C. et al. | 2005
- 985
-
Lifetime Control of the Minority Carrier in PiN Diodes by He^+ Ion ImplantationTanaka, Y. / Kojima, K. / Takao, K. / Okamoto, M. / Kawasaki, M. / Takatsuka, A. / Yatsuo, T. / Arai, K. et al. | 2005
- 989
-
Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or BMaximenko, S. / Soloviev, S. / Grekov, A. / Bolotnikov, A. / Gao, Y. / Sudarshan, T. S. et al. | 2005
- 993
-
Influence of Gamma-Ray and Neutron Irradiation on Injection Characteristics of 4H-SiC pn StructuresStrel chuk, A. M. / Kalinina, E. V. / Konstantinov, A. O. / Hallen, A. et al. | 2005
- 997
-
Investigation of Microwave Switching 4HSiC PiN Diodes in the 20-500 ^oC Temperature RangeBoltovets, M. S. / Basanets, V. V. / Camara, N. / Krivutsa, V. A. / Zekentes, K. et al. | 2005
- 1001
-
Influence of Irradiation on Excess Currents in SiC pn StructuresStrel chuk, A. M. / Kozlovski, V. V. / Lebedev, A. A. / Smirnova, N. Y. et al. | 2005
- 1005
-
A 3.5 kV Thyristor in 4H-SiC with a JTE PeripheryBrosselard, P. / Bouchet, T. / Planson, D. / Scharnholz, S. / Paques, G. / Lazar, M. / Raynaud, C. / Chante, J. P. / Spahn, E. et al. | 2005
- 1009
-
SiC Materials and Technologies for Sensors DevelopmentGodignon, P. et al. | 2005
- 1015
-
Silicon Carbide for Alpha, Beta, Ion and Soft X-Ray High Performance DetectorsBertuccio, G. / Binetti, S. / Caccia, S. / Casiraghi, R. / Castaldini, A. / Cavallini, A. / Lanzieri, C. / Le Donne, A. / Nava, F. / Pizzini, S. et al. | 2005
- 1021
-
Measurements of Charge Collection Efficiency of p^+/n Junction SiC DetectorsMoscatelli, F. / Scorzoni, A. / Poggi, A. / Bruzzi, M. / Lagomarsino, S. / Mersi, S. / Sciortino, S. / Lazar, M. / Di Placido, A. / Nipoti, R. et al. | 2005
- 1025
-
Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton IrradiationStrokan, N. B. / Ivanov, A. M. / Savkina, N. S. / Lebedev, A. A. / Kozlovski, V. V. / Syvajarvi, M. / Yakimova, R. et al. | 2005
- 1029
-
High Energy Resolution Detectors Based on 4H-SiCIvanov, A. / Kalinina, E. / Kholuyanov, G. / Strokan, N. / Onushkin, G. / Konstantinov, A. / Hallen, A. / Kuznetsov, A. et al. | 2005
- 1033
-
High Temperature Hydrocarbon Sensing with Pt-Thin Ga~2O~3-SiC DiodesTrinchi, A. / Wlodarski, W. / Faglia, G. / Ponzoni, A. / Comini, E. / Sberveglieri, G. et al. | 2005
- 1039
-
Modeling of Photon Recycling in GaN-DevicesVelmre, E. / Udal, A. / Klopov, M. et al. | 2005
- 1043
-
Nickel-Vacancy Complexes in Diamond: An Ab Initio InvestigationAssali, L. V. C. / Larico, R. / Machado, W. V. M. / Justo, J. F. et al. | 2005
- 1047
-
Manganese Impurity in Boron Nitride and Gallium NitrideAssali, L. V. C. / Machado, W. V. M. / Justo, J. F. et al. | 2005
- 1051
-
Heteroepitaxy of GaN on Silicon: In Situ MeasurementsKrost, A. / Dadgar, A. / Schulze, F. / Clos, R. / Haberland, K. / Zettler, T. et al. | 2005
- 1057
-
Structure and Energy of the 90^o Partial Dislocations in Wurtzite-GaNSavini, G. / Heggie, M. I. / Ewels, C. P. / Martsinovich, N. / Jones, R. / Blumenau, A. T. et al. | 2005
- 1061
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High Temperature Contacts to GaN and SiC Based on TiB~x Nanostructure LayersBoltovets, M. S. / Ivanov, V. N. / Avksentyev, A. Y. / Belyaev, A. E. / Borisenko, A. G. / Fedorovitsh, O. A. / Konakova, R. V. / Kudryk, Y. Y. / Lytvyn, P. M. / Milenin, V. V. et al. | 2005
- 1065
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Microscopic Spatial Distribution of Bound Excitons in High-Quality ZnOBertram, F. / Forster, D. / Christen, J. / Oleynik, N. / Dadgar, A. / Krost, A. et al. | 2005