Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures (English)
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In:
E-MRS Fall Meeting, European Materials Research Society, Fall Meeting, 2004
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1056-1059
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2005
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ISSN:
- Conference paper / Print
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Title:Influence of n-type doping on light emission properties of GaN layers and GaN-based quantum well structures
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Contributors:Godlewski, M. ( author ) / Ivanov, V.Y. ( author ) / Lusakowska, E. ( author ) / Bozek, R. ( author ) / Miasojedovas, S. ( author ) / Jursenas, S. ( author ) / Kazlauskas, K. ( author ) / Zukauskas, A. ( author ) / Goldys, E.M. ( author ) / Phillips, M.R. ( author )
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Published in:Physica Status Solidi / C: Current topics in solid state physics ; 2, 3 ; 1056-1059
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Publisher:
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Publication date:2005
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Size:4 Seiten, 4 Bilder, 10 Quellen
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:epitaxiale Schicht , Quantentopf , Güte , Gewalt , Rasterelektronenmikroskopie , Lichtemission , Lichtintensität , Emission , Variation , A3-B5-Verbindung , Anregungskurve , Atomkraftmikroskopie , Dauer , Elektronenmikroskopie , Emissionsspektrum , Energiespektrum , Extrinsic-Halbleiter , Funktionswerkstoff , Galliumnitrid , Galliumverbindung , Gebrauchseigenschaft , Halbleitermaterial , Halbleiterverbindung , Haltbarkeit , Indiumnitrid , Indiumverbindung , Leuchtanregung , Materialeigenschaft , Metallverbindung , Mikroskopie , n-Halbleiter , Nichtmetallverbindung , Nitrid
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