Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility (English)
- New search for: Sicard, E.
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In:
Microelectronics Reliability
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45
, 9-11
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1277-1284
;
2005
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ISSN:
- Article (Journal) / Print
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Title:Issues in electromagnetic compatibility of integrated circuits: emission and susceptibility
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Contributors:Sicard, E. ( author ) / Dienot, J.M. ( author )
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Published in:Microelectronics Reliability ; 45, 9-11 ; 1277-1284
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Publisher:
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Publication date:2005
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Size:8 Seiten, 22 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 45, Issue 9-11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1275
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EditorialLabat, N. et al. | 2005
- 1277
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Issues in electromagnetic compatibility of integrated circuits: emission and susceptibilitySicard, E. / Dienot, J.M. et al. | 2005
- 1285
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Basic Principles for Managing Foundry ProgramsLondon, A. et al. | 2005
- 1293
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Lifetime prediction on the base of mission profilesCiappa, Mauro et al. | 2005
- 1299
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Layout dependency induced deviation from Poisson area scaling in BEOL dielectric reliabilityLi, Y.-L. / Tökei, Zs. / Roussel, Ph. / Groeseneken, G. / Maex, K. et al. | 2005
- 1305
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Study of Area Scaling Effect on Integrated Circuit Reliability Based on Yield ModelsHong, Changsoo / Milor, Linda / Choi, Munkang / Lin, Tom et al. | 2005
- 1311
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Investigation on seal-ring rules for IC product reliability in 0.25-μm CMOS technologyChen, Shih-Hung / Ker, Ming-Dou et al. | 2005
- 1311
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Investigation on seal-ring rules for IC product reliability in 0.25-#956m CMOS technologyChen, Shih-Hung et al. | 2005
- 1317
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Reliability for Recessed Channel Structure n-MOSFETSeo, J.Y. / Lee, K.J. / Kim, Y.S. / Lee, S.Y. / Hwang, S.J. / Yoon, C.K. et al. | 2005
- 1321
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Reliability predictions in electronic industrial applicationsCassanelli, G. / Mura, G. / Cesaretti, F. / Vanzi, M. / Fantini, F. et al. | 2005
- 1327
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Robust, versatile, direct low-frequency noise characterization method for material/process quality control using cross-shaped 4-terminal devicesKerlain, A. / Mosser, V. et al. | 2005
- 1331
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Gate stress effect on low temperature data retention characteristics of split-gate flash memoriesHu, Ling-Chang / Kang, An-Chi / Chen, Eric / Shih, J.R. / Lin, Yao-Feng / Wu, Kenneth / King, Ya-Chin et al. | 2005
- 1337
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Tunnel oxide degradation under pulsed stressGhidini, G. / Capolupo, C. / Giusto, G. / Sebastiani, A. / Stragliati, B. / Vitali, M. et al. | 2005
- 1343
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Negative bias temperature instability mechanisms in p-channel power VDMOSFETsStojadinović, N. / Danković, D. / Djorić-Veljković, S. / Davidović, V. / Manić, I. / Golubović, S. et al. | 2005
- 1349
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Hot-carrier reliability of 20V MOS transistors in 0.13 μm CMOS technologyRey-Tauriac, Y. / Badoc, J. / Reynard, B. / Bianchi, R.A. / Lachenal, D. / Bravaix, A. et al. | 2005
- 1349
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Hot-carrier reliability of 20V MOS transistors in 0.13 mu m CMOS technologyRey-Tauriac, Y. / Badoc, J. / Reynard, B. / Bianchi, R.A. / Lachenal, D. / Bravaix, A. et al. | 2005
- 1349
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Hot-carrier reliability of 20V MOS transistors in 0.13 #956m CMOS technologyRey-Tauriac, Y. et al. | 2005
- 1355
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Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxideNelhiebel, M. / Wissenwasser, J. / Detzel, Th. / Timmerer, A. / Bertagnolli, E. et al. | 2005
- 1360
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Dielectric reliability of stacked Al2O3–HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristicsSeo, J.Y. / Lee, K.J. / Lee, S.Y. / Hwang, S.J. / Yoon, C.K. et al. | 2005
- 1360
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Dielectric reliability of stacked Al2O3#8211HfO2 MIS capacitors with cylinder type for improving DRAM data retention characteristicsSeo, J.Y. et al. | 2005
- 1365
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Degradation of high-K LA2O3 gate dielectrics using progressive electrical stressMiranda, E. / Molina, J. / Kim, Y. / Iwai, H. et al. | 2005
- 1370
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Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETsBravaix, A. / Goguenheim, D. / Denais, M. / Huard, V. / Parthasarathy, C. / Perrier, F. / Revil, N. / Vincent, E. et al. | 2005
- 1376
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Radiation source dependence of performance degradation in thin gate oxide fully-depleted SOI n-MOSFETsHayama, K. / Takakura, K. / Ohyama, H. / Kuboyama, S. / Matsuda, S. / Rafí, J.M. / Mercha, A. / Simoen, E. / Claeys, C. et al. | 2005
- 1382
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Hot carrier and soft breakdown effects on LNA performance for ultra wideband communicationsXiao, E. / Ghosh, P.P. / Yu, C. / Yuan, J.S. et al. | 2005
- 1386
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The impact of static and dynamic degradation on SOI #8220smart-cut#8221 floating body MOSFETsExarchos, M.A. et al. | 2005
- 1386
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The impact of static and dynamic degradation on SOI “smart-cut” floating body MOSFETsExarchos, M.A. / Papaioannou, G.J. / Jomaah, J. / Balestra, F. et al. | 2005
- 1390
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Pre- and post-BD electrical conduction of stressed HfO2/SiO2 MOS gate stacks observed at the nanoscaleAguilera, L. / Porti, M. / Nafría, M. / Aymerich, X. et al. | 2005
- 1394
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Elimination of surface state induced edge transistors in high voltage NMOSFETs for flash memory devicesLee, Jin-Wook / Buh, Gyoung Ho / Yon, Guk-Hyon / Park, Tai-su / Shin, Yu Gyun / Chung, U-In / Moon, Joo-Tae et al. | 2005
- 1398
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Stress Mechanism about Field Lightning Surge of High Voltage BJT Based Line Driver for ADSL SystemJeong, Jae-Seong / Lee, Jae-Hyun / Ha, Jong-Shin / Park, Sang-Deuk et al. | 2005
- 1402
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Voltage stress-induced hot carrier effects on SiGe HBT VCOYu, Chuanzhao / Xiao, Enjun / Yuan, J.S. et al. | 2005
- 1406
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Trends and challenges to ESD and Latch-up designs for nanometer CMOS technologiesBoselli, G. / Duvvury, C. et al. | 2005
- 1415
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Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structureGuitard, N. / Essely, F. / Trémouilles, D. / Bafleur, M. / Nolhier, N. / Perdu, P. / Touboul, A. / Pouget, V. / Lewis, D. et al. | 2005
- 1421
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A Dedicated TLP Set-Up to Investigate the ESD Robustness of RF Elements and CircuitsWolf, Heinrich / Gieser, Horst / Soldner, Wolfgang / Goßner, Harald et al. | 2005
- 1425
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A 3-D Circuit Model to evaluate CDM performance of ICsSowariraj, M.S.B. / Smedes, Theo / de Jong, Peter C. / Salm, Cora / Mouthaan, Ton / Kuper, Fred G et al. | 2005
- 1430
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ESD circuit model based protection network optimisation for extended-voltage NMOS driversVassilev, V. / Vashchenko, V. / Jansen, Ph. / Groeseneken, G. / Terbeek, M. et al. | 2005
- 1436
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Reliability challenges for copper low-k dielectrics and copper diffusion barriersTökei, Zs. / Li, Y.-L. / Beyer, G.P. et al. | 2005
- 1443
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Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structuresRoy, Arijit / Tan, Cher Ming / Kumar, Rakesh / Chen, Xian Tong et al. | 2005
- 1449
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Effect of vacuum break after the barrier layer deposition on the electromigration performance of aluminum based line interconnectsTan, Cher Ming / Roy, Arijit / Tan, Kok Tong / Ye, Derek Sim Kwang / Low, Frankie et al. | 2005
- 1455
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Reliability improvement by the suppression of keyhole generation in W-plug viasKim, Jong Hun / Kim, Kyosun / Jeon, Seok Hee / Park, Jong Tae et al. | 2005
- 1459
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NIR laser stimulation for dynamic timing analysisSanchez, K. / Desplats, R. / Beaudoin, F. / Perdu, P. / Roux, J.P. / Woods, G. / Lewis, D. et al. | 2005
- 1465
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Impact of semiconductors material on IR Laser Stimulation signalFiriti, A. / Beaudoin, F. / Haller, G. / Perdu, P. / Lewis, D. / Fouillat, P. et al. | 2005
- 1471
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Photon emission microscopy of inter/intra chip device performance variationsPolonsky, S. / Bhushan, M. / Gattiker, A. / Weger, A. / Song, P. et al. | 2005
- 1476
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Light Emission to Time Resolved Emission For IC Debug and Failure AnalysisRemmach, M. / Pigozzi, A. / Desplats, R. / Perdu, P. / Lewis, D. / Noel, J. / Dudit, S. et al. | 2005
- 1482
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ElectroStatic Discharge Fault Localization by Laser ProbingGrauby, S. / Salhi, A. / Claeys, W. / Trias, D. / Dilhaire, S. et al. | 2005
- 1487
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Seebeck Effect Detection on Biased Device without OBIRCH Distortion Using FET ReadoutBrahma, Sanjib Kumar / Boit, Christian / Glowacki, Arkadiusz et al. | 2005
- 1493
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Innovative packaging technique for backside optical testing of wire-bonded chipsTosi, A. / Stellari, F. / Zappa, F. et al. | 2005
- 1499
-
Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential ContrastBuzzo, M. / Ciappa, M. / Stangoni, M. / Fichtner, W. et al. | 2005
- 1505
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Circuit-internal signal measurements with a needle sensorHartmann, C. / Mertin, W. / Bacher, G. et al. | 2005
- 1509
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Advanced electrical analysis of embedded memory cells using atomic force probingGrützner, M. et al. | 2005
- 1514
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Oxide charge measurements in EEPROM devicesDe Nardi, C. / Desplats, R. / Perdu, P. / F.Beaudoin / Gauffier, J.-L. et al. | 2005
- 1520
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Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM productsNeumann, G. / Touzel, J. / Duschl, R. et al. | 2005
- 1526
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STEM role in failure analysisIannello, M.-A. / Tsung, L. et al. | 2005
- 1532
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Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor DevicesStangoni, Maria / Ciappa, Mauro / Fichtner, Wolfgang et al. | 2005
- 1538
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Dynamic Laser Stimulation Case StudiesBeaudoin, F. / Sanchez, K. / Desplats, R. / Perdu, P. / Nicot, J.M. / Roux, J.P. / Otte, M. et al. | 2005
- 1544
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Electrical Performance Evaluation of FIB Edited Circuits through Chip Backside Exposing Shallow Trench IsolationsSchlangen, R. / Kerst, U. / Kabakow, A. / Boit, C. et al. | 2005
- 1550
-
Characterization of a 0.13 #956m CMOS Link Chip using Time Resolved Emission (TRE)Stellari, Franco et al. | 2005
- 1550
-
Characterization of a 0.13 μm CMOS Link Chip using Time Resolved Emission (TRE)Stellari, Franco / Song, Peilin / Hryckowian, John / Torreiter, Otto A. / Wilson, Steve / Wu, Phil / Tosi, Alberto et al. | 2005
- 1554
-
Localization of Marginal Circuits for Yield Diagnostics Utilizing a Dynamic Laser Stimulation Probing SystemLiao, J.Y. / Woods, G.L. / Chen, X. / Marks, H.L. et al. | 2005
- 1558
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Characterisation of dopants distribution using electron holography and FIB-based lift-off preparationMuehle, U. / Lenk, A. / Weiland, R. / Lichte, H. et al. | 2005
- 1562
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SRAM cell defect isolation methodology a by sub micron probing techniqueSibileau, F. / Ali, C. / Giret, C. / Faure, D. et al. | 2005
- 1562
-
SRAM cell defect isolation methodology by sub micron probing techniqueSibileau, F. / Ali, C. / Giret, C. / Faure, D. et al. | 2005
- 1568
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Intermittent contact scanning capacitance microscopy-An improved method for 2D doping profilingBreitschopf, Peter / Benstetter, Günther / Knoll, Bernhard / Frammelsberger, Werner et al. | 2005
- 1572
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Non-destructive identification of open circuit in wiring on organic substrate with high wiring density covered with solder resistTan, Cher Ming / Lim, Kim Peng / Chai, Tai Chong / Lim, Guat Cheng et al. | 2005
- 1576
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Die repackaging for failure analysisBarberan, S. / Auvray, E. et al. | 2005
- 1581
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Image alignment for 3D reconstruction in a SEMPintus, Ruggero / Podda, Simona / Vanzi, Massimo et al. | 2005
- 1585
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DC-to-RF dispersion effects in GaAs- and GaN-based heterostructure FETs: performance and reliability issuesVerzellesi, G. / Meneghesso, G. / Chini, A. / Zanoni, E. / Canali, C. et al. | 2005
- 1593
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Electroluminescence spectroscopy for reliability investigations of 1.55 μm bulk semiconductor optical amplifierHuyghe, S. / Bechou, L. / Zerounian, N. / Deshayes, Y. / Aniel, F. / Denolle, A. / Laffitte, D. / Goudard, J.L. / Danto, Y. et al. | 2005
- 1593
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Electroluminescence spectroscopy for reliability investigations of 1.55 #956m bulk semiconductor optical amplifierHuyghe, S. et al. | 2005
- 1600
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Reliability investigations on LTG-GaAs photomixers for THz generation based on optical heterodyningSydlo, C. / Sigmund, J. / Mottet, B. / Hartnagel, H.L. et al. | 2005
- 1605
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On state breakdown in PHEMTs and its temperature dependenceCova, P. / Delmonte, N. / Menozzi, R. et al. | 2005
- 1611
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Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditionsIsmail, N. / Malbert, N. / Labat, N. / Touboul, A. / Muraro, J.L. / Brasseau, F. / Langrez, D. et al. | 2005
- 1617
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A 3000 hours DC Life Test on AlGaN/GaN HEMT for RF and microwave applicationsSozza, A. / Dua, C. / Morvan, E. / Grimber, B. / Delage, S.L. et al. | 2005
- 1622
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Performances and limitations analyses of PHEMT and MHEMT for applications in high bit rate fiber-optic systemsPajona, O. / Aupetit-Berthelemot, C. / Lefevre, R. / Dumas, J.M. et al. | 2005
- 1626
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Failure mechanisms and qualification testing of passive componentsPost, H.A. / Letullier, P. / Briolat, T. / Humke, R. / Schuhmann, R. / Saarinen, K. / Werner, W. / Ousten, Y. / Lekens, G. / Dehbi, A. et al. | 2005
- 1633
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Prediction of Delamination Related IC & Packaging Reliability Problemsvan Driel, W.D. / van Gils, M.A.J. / van Silfhout, R.B.R. / Zhang, G.Q. et al. | 2005
- 1639
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Isolating failing sites in IC packages using time domain reflectometry: Case studiesAbessolo-Bidzo, D. / Poirier, P. / Descamps, P. / Domengès, B. et al. | 2005
- 1645
-
New experimental approach for failure prediction in electronics: Topography and deformation measurement complemented with acoustic microscopyRichard, Isaline / Fayolle, Romain / Lecomte, Jean-Claude et al. | 2005
- 1652
-
Correlation between Experimental Results and FE Simulations to Evaluate Lead-Free BGA Assembly ReliabilityGuédon-Gracia, A. / Woirgard, E. / Zardini, C. et al. | 2005
- 1658
-
Vibration lifetime modelling of PCB assemblies using steinberg modelDehbi, A. / Ousten, Y. / Danto, Y. / Wondrak, W. et al. | 2005
- 1662
-
Moisture diffusion in Printed Circuit Boards: Measurements and Finite- Element- SimulationsWeide-Zaage, Kirsten / Horaud, Walter / Frémont, Hélène et al. | 2005
- 1668
-
A simple moisture diffusion model for the prediction of optimal baking schedules for plastic SMD packagesLee, K.C. / Vythilingam, A. / Alpern, P. et al. | 2005
- 1672
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Reliability Potential Of Epoxy Based Encapsulants For Automotive ApplicationsBraun, T. / Becker, K.-F. / Koch, M. / Bader, V. / Aschenbrenner, R. / Reichl, H. et al. | 2005
- 1676
-
Reliability of Contacts for Press-Pack High-Power DevicesVobecký, J. / Kolesnikov, D. et al. | 2005
- 1682
-
Effects of uni-axial mechanical stress on IGBT characteristicsUsui, Masanori / Ishiko, Masayasu / Hotta, Koji / Kuwano, Satoshi / Hashimoto, Masato et al. | 2005
- 1688
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Automated setup for thermal imaging and electrical degradation study of power DMOS devicesHeer, M. / Dubec, V. / Blaho, M. / Bychikhin, S. / Pogany, D. / Gornik, E. / Denison, M. / Stecher, M. / Groos, G. et al. | 2005
- 1694
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Extraction of Accurate Thermal Compact Models for Fast Electro-Thermal Simulation of IGBT Modules in Hybrid Electric VehiclesCiappa, M. / Fichtner, W. / Kojima, T. / Yamada, Y. / Nishibe, Y. et al. | 2005
- 1700
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Assessment of the Trench IGBT reliability: low temperature experimental characterizationAzzopardi, S. / Benmansour, A. / Ishiko, M. / Woirgard, E. et al. | 2005
- 1706
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Reliability enhancement with the aid of transient infrared thermal analysis of smart Power MOSFETs during short circuit operationIrace, A. / Breglio, G. / Spirito, P. / Letor, R. / Russo, S. et al. | 2005
- 1711
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Experimental and Numerical investigation about SEB/SEGR of Power MOSFETBusatto, G. / Porzio, A. / Velardi, F. / Iannuzzo, F. / Sanseverino, A. / Currò, G. et al. | 2005
- 1717
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Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal FatigueKhong, B. / Tounsi, P. / Dupuy, Ph. / Chauffleur, X. / Legros, M / Deram, A. / Levade, C. / Vanderschaeve, G. / Dorkel, J.-M. / Fradin, J.-P. et al. | 2005
- 1723
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Reliability screening through electrical testing for press-fit alternator power diode in automotive applicationTan, Cher Ming / Chiu, Joe / Liu, Robert / Zhang, Guan et al. | 2005
- 1728
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Trench insulated gate bipolar transistors submitted to high temperature bias stressMaïga, C.O. / Toutah, H. / Tala-Ighil, B. / Boudart, B. et al. | 2005
- 1732
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Comparative analysis of accelerated ageing effects on power RF LDMOS reliabilityBelaïd, M.A. / Ketata, K. / Mourgues, K. / Maanane, H. / Masmoudi, M. / Marcon, J. et al. | 2005
- 1738
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Non-destructive Testing Technique for MOSFET’s Characterisation during Soft-Switching ZVS OperationsIannuzzo, Francesco et al. | 2005
- 1738
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Non-destructive Testing Technique for MOSFET#8217s Characterisation during Soft-Switching ZVS OperationsIannuzzo, Francesco et al. | 2005
- 1742
-
A novel fast and versatile temperature measurement system for LDMOS transistorsTazzoli, A. / Meneghesso, G. / Zanoni, E. et al. | 2005
- 1746
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Specification and use of pulsed current profiles for ultracapacitors power cyclingLajnef, W. / Vinassa, J.-M. / Briat, O. / Woirgard, E. et al. | 2005
- 1750
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Failure Analysis Issues in Microelectromechanical Systems (MEMS)Walraven, J.A. et al. | 2005
- 1758
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Out of plane vs in plane flexural behaviour of thin polysilicon films: Mechanical characterization and application of the Weibull approachCacchione, F. / Corigliano, A. / De Masi, B. / Riva, C. et al. | 2005
- 1764
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FTIR spectroscopy for the hermeticity assessment of micro-cavitiesVeyrié, D. / Lellouchi, D. / Roux, J.L. / Pressecq, F. / Tetelin, A. / Pellet, C. et al. | 2005
- 1770
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Failure predictive model of capacitive RF-MEMSMellé, S. / De Conto, D. / Mazenq, L. / Dubuc, D. / Poussard, B. / Bordas, C. / Grenier, K. / Bary, L. / Vendier, O. / Muraro, J.L. et al. | 2005
- 1776
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Biaxial initial stress characterization of bilayer gold RF-switchesYacine, K. / Flourens, F. / Bourrier, D. / Salvagnac, L. / Calmont, P. / Lafontan, X. / Duong, Q.-H. / Bucaillot, L. / Peyrou, D. / Pons, P. et al. | 2005
- 1782
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Investigation of charging mechanisms in metal-insulator-metal structuresExarchos, M. / Theonas, V. / Pons, P. / Papaioannou, G.J. / Melle, S. / Dubuc, D. / Cocetti, F. / Plana, R. et al. | 2005
- 1786
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Failure analysis of micro-heating elements suspended on thin membranesBriand, D. / Beaudoin, F. / Courbat, J. / de Rooij, N.F. / Desplats, R. / Perdu, P. et al. | 2005
- 1790
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Thermal and electrostatic reliability characterization in RF MEMS switchesDuong, Q.-H. / Buchaillot, L. / Collard, D. / Schmitt, P. / Lafontan, X. / Pons, P. / Flourens, F. / Pressecq, F. et al. | 2005
- 1794
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Dynamic stress-induced high-frequency noise degradations in nMOSFETsYu, Chuanzhao / Yuan, J.S. / Sadat, Anwar et al. | 2005
- 1800
-
Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 μm CMOS bipolar transistorsBenoit, P. / Raoult, J. / Delseny, C. / Pascal, F. / Snadny, L. / Vildeuil, J.-C. / Marin, M. / Martinet, B. / Cottin, D. / Noblanc, O. et al. | 2005
- 1800
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DC and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 mu m CMOS bipolar transistorsBenoit, P. / Raoult, J. / Delseny, C. / Pascal, F. / Snadny, L. / Vildeuil, J.C. / Marin, M. / Martinet, B. / Cottin, D. / Noblanc, O. et al. | 2005
- 1800
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Dc and low frequency noise analysis of hot-carrier induced degradation of low complexity 0.13 #956m CMOS bipolar transistorsBenoit, P. et al. | 2005
- I
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Author index (Generate from contents)| 2005