Development of electron cyclotron resonance ion source for synthesis of endohedral metallofullerenes (English)
- New search for: Tanaka, K.
- New search for: Muramatsu, M.
- New search for: Uchida, T.
- New search for: Biri, S.
- New search for: Asaji, T.
- New search for: Shima, K.
- New search for: Hanajiri, T.
- New search for: Kitagawa, A.
- New search for: Kato, Y.
- New search for: Yoshida, Y.
- New search for: Tanaka, K.
- New search for: Muramatsu, M.
- New search for: Uchida, T.
- New search for: Biri, S.
- New search for: Asaji, T.
- New search for: Shima, K.
- New search for: Hanajiri, T.
- New search for: Kitagawa, A.
- New search for: Kato, Y.
- New search for: Yoshida, Y.
In:
IIT, International Conference on Ion Implantation Technology, 17
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525-528
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2008
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ISBN:
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ISSN:
- Conference paper / Print
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Title:Development of electron cyclotron resonance ion source for synthesis of endohedral metallofullerenes
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Contributors:Tanaka, K. ( author ) / Muramatsu, M. ( author ) / Uchida, T. ( author ) / Biri, S. ( author ) / Asaji, T. ( author ) / Shima, K. ( author ) / Hanajiri, T. ( author ) / Kitagawa, A. ( author ) / Kato, Y. ( author ) / Yoshida, Y. ( author )
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Published in:AIP Conference Proceedings ; 1066 ; 525-528
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Publisher:
- New search for: American Institute of Physics
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Place of publication:Melville
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Publication date:2008
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Size:4 Seiten, 8 Bilder, 1 Tabelle, 10 Quellen
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ISBN:
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ISSN:
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DOI:
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Type of media:Conference paper
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents conference proceedings
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3
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The Development and Evolution of Ion Implanters in the Semiconductor IndustryArmour, D.G. / American Institute of Physics et al. | 2008
- 11
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Ultra-Shallow Junction Formation-Physics and Advanced TechnologyColombeau, B. / Yeong, S.H. / Tan, D.X.M. / Smith, A.J. / Gwilliam, R.M. / Ng, C.M. / Mok, K.R.C. / Benistant, F. / Chan, L. / American Institute of Physics et al. | 2008
- 19
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The Reduction of TED in Ion Implanted SiliconJain, A. / American Institute of Physics et al. | 2008
- 22
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Junction Leakage Analysis of Vacancy Engineered Ultra-Shallow p-Type LayersSmith, A.J. / Antwis, L.D. / Yeong, S.H. / Knights, A.P. / Colombeau, B. / Sealy, B.J. / Gwilliam, R.M. / American Institute of Physics et al. | 2008
- 26
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Ion Beam Control and Transistor Characteristics for 45nm Source-Drain Extension FormationOkabe, K. / Nishikawa, M. / Ikeda, K. / Kurata, H. / Mori, T. / Satoh, S. / Kase, M. / American Institute of Physics et al. | 2008
- 30
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Dose Rate Effects: The Impact of Beam Dynamics on Materials Issues and Device PerformanceAmeen, M.S. / Harris, M.A. / Huynh, C. / Reece, R.N. / American Institute of Physics et al. | 2008
- 34
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Defect Engineering for Ultra-Shallow Junctions Using SurfacesSeebauer, E.G. / Kwok, C.T.M. / Vaidyanathan, R. / Kondratenko, Y.V. / Yeong, S.H. / Srinivasan, M.P. / Colombeau, B. / Chan, L. / American Institute of Physics et al. | 2008
- 38
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The Formation of Ultra-Shallow Phosphorous Doped Layers Using Vacancy EngineeringSmith, A.J. / Yeong, S.H. / Colombeau, B. / Sealy, B.J. / Gwilliam, R.M. / American Institute of Physics et al. | 2008
- 42
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Non-Fluorine Plasma Strip of HDI Resist for 45 nmZakharov, A. / Grimm, V. / Krueger, C. / Han, K. / Berry, I. / Sonnemans, R. / Luo, S. / American Institute of Physics et al. | 2008
- 47
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An Extensive Study on the Boron Junctions Formed by Optimized Pre-Spike / Multiple-Pulse Flash Lamp Annealing Schemes: Junction Formation, Stability and LeakageYeong, S.H. / Tan, D.X.M. / Colombeau, B. / Poon, C.H. / Mok, K.R.C. / See, A. / Benistant, F. / Pey, K.L. / Ng, C.M. / Chan, L. et al. | 2008
- 51
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A Comparative Study of Interaction of End of Range (EOR) Defect Band with Upper Buried Oxide (BOX) Interface for B and BF~2 Implants in SOI and Bulk Silicon with Pre-Amorphizing ImplantKah, M. / Smith, A.J. / Hamilton, J.J. / Yeong, S.H. / Colombeau, B. / Gwilliam, R.M. / Webb, R.P. / Kirkby, K.J. / American Institute of Physics et al. | 2008
- 55
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USJ Process Challenges for sub-45 nm CMOSKalra, P. / Majhi, P. / Tseng, H.-H. / Larson, L. / Jammy, R. / Liu, T.-J.K. / American Institute of Physics et al. | 2008
- 63
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Comparison of B, BF~2 & B~1~8H~2~2 for Extension and BF~2, B~1~8H~2~2 and in HALO Implantation for 32nm Node Using Various Diffusion-less Annealing TechniquesBorland, J. / Kiyama, H. / American Institute of Physics et al. | 2008
- 67
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New Approaches for Characterization of Advanced Annealing Techniques for Ultra-Shallow Junction FormationTimans, P. / Hu, Y.Z. / Gelpey, J. / McCoy, S. / Lerch, W. / Paul, S. / Bolze, D. / Kheyrandish, H. / American Institute of Physics et al. | 2008
- 71
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Electron Holography Characterization of Shallow Junction Fabricated by Diffusion-less Process for Sub-30nm Gate-Length MOSFETsIkarashi, N. / Uejima, K. / Ikezawa, T. / Fukai, T. / Toda, A. / Hane, M. / American Institute of Physics et al. | 2008
- 75
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The Application of the Continuous Anodic Oxidation Technique for the Evaluation of State-of-the-Art Front-End StructuresPrussin, S. / Qin, S. / Reyes, J. / McTeer, A. / American Institute of Physics et al. | 2008
- 79
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Ultra-Shallow P^+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser ActivationHara, S. / Tanaka, Y. / Fukaya, T. / Matsumoto, S. / Suzuki, T. / Fuse, G. / Kudo, T. / Sakuragi, S. / American Institute of Physics et al. | 2008
- 83
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Local Resistance Profiling of Ultra-Shallow Junction with Spike Lamp and Laser Annealing Using Scanning Spreading Resistance MicroscopyAbo, S. / Tanaka, Y. / Nishikawa, K. / Wakaya, F. / Iwamatsu, T. / Oda, H. / Takai, M. / American Institute of Physics et al. | 2008
- 87
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A Study of Implanted BF~2 as a Function of Wafer Temperature during ImplantHuh, T.-H. / Kang, B.-J. / Ra, G.-J. / Lee, K.-W. / Kim, S. / Reece, R.N. / Rubin, L.M. / Ameen, M.S. / Moon, W.-M. / Lee, M.-S. et al. | 2008
- 91
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The Effect of Amorphization Conditions on the Measured Activation of Source Drain Extension ImplantsEngland, J. / Kontos, A. / Renau, A. / Gwilliam, R. / Smith, A. / Knights, A. / Jain, A. / American Institute of Physics et al. | 2008
- 95
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Photon Influence on P and B DiffusionAderhold, W. / Hunter, A. / Felch, S.B. / Ranish, J. / American Institute of Physics et al. | 2008
- 101
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Threshold Voltage Mismatch Resulting from Mechanical VibrationTowner, J.M. / American Institute of Physics et al. | 2008
- 105
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Using Ion Implantation to Streamline High Volt Processing in Standard CMOSNaughton, J.J. / Towner, J.M. / American Institute of Physics et al. | 2008
- 109
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EXLE-SIMS: Dramatically Enhanced Accuracy for Dose Loss MetrologyVandervorst, W. / Vos, R. / Salima, A.J. / Merkulov, A. / Nakajima, K. / Kimura, K. / American Institute of Physics et al. | 2008
- 113
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Junction Photovoltage Metrology and High Resolution Mapping of Ion Implants Electrically Isolated from the Wafer SurfaceKorsos, F. / Kis-Szabo, K. / Don, E. / Pap, A. / Pavelka, T. / Laviron, C. / Pfeffer, M. / American Institute of Physics et al. | 2008
- 117
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Dynamics of Carrier Plasma and Thermal Waves in Ion Implanted Si with Varying Pump and Probe WavelengthsSalnik, A. / Shaughnessy, D. / American Institute of Physics et al. | 2008
- 121
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Characterization of Charging Control of a Single Wafer High Current Spot Beam ImplanterSchmeide, M. / Bukethal, C. / American Institute of Physics et al. | 2008
- 125
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Reliability Tests of a Real Time Charge Monitor (RTCM)Gammel, G. / Biloiu, C. / Perel, A. / Scheuer, J. / Renau, A. / American Institute of Physics et al. | 2008
- 129
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Angle Effects in High Current Ion ImplantationOlson, J.C. / Campbell, C. / Suguro, K. / Kawase, Y. / Ito, H. / American Institute of Physics et al. | 2008
- 133
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Key Technologies for Ultra High Dose CMOS ApplicationsJeon, Y. / Koo, I. / Oh, J. / Lee, S.B. / Butterbaugh, J. / Jin, S. / Lee, J. / Rouh, K. / Ju, M. / Jeon, S. et al. | 2008
- 137
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vMask® Usage in Semiconductor Foundry ManufacturingLi, C.I. / Lai, H.H. / Liu, R. / Chen, C.C. / Wang, Y.R. / Chan, M. / Yang, C.L. / Tzou, S.F. / Guo, B. / Jo, S. et al. | 2008
- 141
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Accurate Dose Control with Pressure Compensation System on Single-Wafer Ion ImplantersSano, M. / Yamada, T. / Sato, F. / Tsukihara, M. / Sugitani, M. / American Institute of Physics et al. | 2008
- 145
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Improved Beam Angle Control with SPV MetrologySteeples, K. / Tsidilkovski, E. / Bertuch, A. / Ishida, E. / Agarwal, A. / American Institute of Physics et al. | 2008
- 148
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Implant Angle Repeatability on Optima MDRathmell, R. / David, J. / Harris, M. / American Institute of Physics et al. | 2008
- 152
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Characterization of a Small Form Factor Multipole RGA for Process Chamber Monitoring and for Reduction in Time to Complete Routine Preventive MaintenanceJohnson, R. / Winningham, B. / Schuur, J. / American Institute of Physics et al. | 2008
- 156
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Correlation of Beam Transport Characteristics and Mass Resolving Power to Analyzing Magnet Pole Piece Wear in Axcelis HE Ion ImplantersJohnson, R. / Schuur, J. / Tysinger, R. / American Institute of Physics et al. | 2008
- 159
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Simulation of Mass Interferences Considering Charge Exchange Events and Dissociation of Molecular Ions during ExtractionHaublein, V. / Frey, L. / Ryssel, H. / American Institute of Physics et al. | 2008
- 163
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Non-Uniform Dose Mapping Controlled by Modulated Vertical and Horizontal ScansNinomiya, S. / Kimura, Y. / Kudo, T. / Ochi, A. / Toda, R. / Tsukihara, M. / Sato, F. / Fuse, G. / Ueno, K. / Sugitani, M. et al. | 2008
- 167
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Micro Four-Point Probe with High Spatial Resolution for Ion Implantation and Ultra-Shallow Junction CharacterizationKjaer, D. / Lin, R. / Petersen, D.H. / Kopalidis, P.M. / Eddy, R. / Walker, D.A. / Egelhoff, W.F. / Pickert, L. / American Institute of Physics et al. | 2008
- 171
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Photothermal Investigation of Micro-Uniformity Problems Caused by Different Scan SystemsGeiler, H. / Brand, K. / Selle, H.-J. / American Institute of Physics et al. | 2008
- 175
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High-Resolution Mapping of Low-Dose ImplantsHalim, J. / Mineji, A. / Faifer, V. / Current, M. / American Institute of Physics et al. | 2008
- 179
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Improved R~s Monitoring for Robust Process Control of High Energy Well ImplantsKim, J.H. / Kim, S. / Ra, G.J. / Lee, K.W. / Reece, R.N. / Bae, S.Y. / American Institute of Physics et al. | 2008
- 182
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Evaluation of Laser Scattering Technique and Spectroscopic Ellipsometry for In-Line Ion Implantation CharacterizationMilesi, F. / Nolot, E. / Mehrez, Z. / Mazen, F. / Favier, S. / American Institute of Physics et al. | 2008
- 186
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Carrier Density Profiling of Ultra-Shallow Junction Layers through Corrected C-V PlottingChen, J. / Dimitrov, D. / Dimitrova, T. / Timans, P. / Gelpey, J. / McCoy, S. / Lerch, W. / Paul, S. / Bolze, D. / American Institute of Physics et al. | 2008
- 190
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Evaluation of Pre-Amorphous Layer by Spectroscopic EllipsometryShibata, S. / Kawase, F. / Kitada, A. / Kouzaki, T. / American Institute of Physics et al. | 2008
- 194
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Quantitative Evaluation of Ion-Implanted Arsenic in Silicon by Instrumental Neutron Activation AnalysisTakatsuka, T. / Hirata, K. / Kobayashi, Y. / Kuroiwa, T. / Miura, T. / Matsue, H. / American Institute of Physics et al. | 2008
- 198
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Correlation of Measured Surface Contaminants as a Function of Ion Beam Current in GSD Ion ImplantersJohnson, R. / Eddy, R. / Schuur, J. / American Institute of Physics et al. | 2008
- 205
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An Atomistic Model of Stressed Si Solid-Phase EpitaxyRudawski, N.G. / Jones, K.S. / Gwilliam, R. / American Institute of Physics et al. | 2008
- 209
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The Role of Implanter Parameters on Implant Damage Generation: An Atomistic Simulation StudySinger, J. / Jaraiz, M. / Castrillo, P. / Laviron, C. / Cagnat, N. / Wacquant, F. / Cueto, O. / Poncet, A. / American Institute of Physics et al. | 2008
- 213
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Importance of the Carbon Kick-out Mechanism in Reducing Transient Enhanced DiffusionVanderpool, A. / American Institute of Physics et al. | 2008
- 217
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Fracture in Hydrogen-Implanted GermaniumMazen, F. / Tauzin, A. / Sanchez, L. / Chieux, F. / Deguet, C. / Augendre, E. / Akatsu, T. / Richtarch, C. / Clavelier, L. / American Institute of Physics et al. | 2008
- 221
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Ion Beam Layer Separation of Cadmium Zinc TellurideBhattacharya, R.S. / He, P. / Xu, Y. / Goorsky, M. / American Institute of Physics et al. | 2008
- 225
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Boron Diffusion in Amorphous GermaniumEdelman, L.A. / Jones, K.S. / Elliman, R.G. / Rubin, L.M. / American Institute of Physics et al. | 2008
- 228
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Optically Stimulated Diffusion in Ultra-Shallow Junction FormationKondratenko, Y. / Kwok, C.T.M. / Vaidyanathan, R. / Seebauer, E.G. / American Institute of Physics et al. | 2008
- 232
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Numerical Solution of Scattering Integral for Universal Interatomic PotentialHaidari, G. / American Institute of Physics et al. | 2008
- 236
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Angular Distributions of Sputtered Atoms from Semiconductor Targets at Grazing Ion Beam Incidence AnglesSekowski, M. / Burenkov, A. / Hernandez-Mangas, J. / Martinez-Limia, A. / Ryssel, H. / American Institute of Physics et al. | 2008
- 240
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Surface Modification of Polymer Substrates by Oxygen Ion IrradiationTakaoka, G.H. / Ryuto, H. / Araki, R. / Yakushiji, T. / American Institute of Physics et al. | 2008
- 244
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How Vacancies Assist in the Formation of Antisite-Complex Centers in 3C-SiC during Ion ImplantationNakagawa, S.T. / Okamoto, A. / Ohishi, M. / Saito, H. / Hashimoto, H. / Betz, G. / American Institute of Physics et al. | 2008
- 248
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Ion Implanted Left-Handed Tunable Metamaterial for Microwave Circuit ApplicationsYang, H. / Kafaratzis, A. / Hu, Z. / Peng, N. / Gwilliam, R. / American Institute of Physics et al. | 2008
- 251
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Platinum vs. Palladium in Catalyst-Based Hydrogen Sensors Used for Wide Temperature Range Hydrazine Leak DetectionMuntele, C. / Ila, D. / American Institute of Physics et al. | 2008
- 257
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Vertical Beam Angle Control: An Advancement/Requirement in Modern Ion Implant ManufacturingKrueger, C. / Rathmell, R. / Kamenitsa, D. / Krimbacher, B. / American Institute of Physics et al. | 2008
- 261
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Benefits of Zero Degree Single Wafer High Energy Implants for Advanced Semiconductor Device FabricationLee, W. / Thanigaivelan, T. / Gossmann, H.-J. / Low, R. / Colombeau, B. / Lacey, K. / Merrill, M. / Renau, A. / American Institute of Physics et al. | 2008
- 265
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Neutralization of Space Charge Effects for Low Energy Ion Beams Using Field EmittersNicolaescu, D. / Sakai, S. / Matsuda, K. / Gotoh, Y. / Ishikawa, J. / American Institute of Physics et al. | 2008
- 269
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Introduction of the MC3-II/WR System, an Extended Energy Medium Current Ion ImplanterSugitani, M. / Sato, F. / Koike, M. / Sano, M. / Ueno, K. / American Institute of Physics et al. | 2008
- 273
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Optima XE Single Wafer High Energy Ion ImplanterSatoh, S. / Ferrara, J. / Bell, E. / Patel, S. / Sieradzki, M. / American Institute of Physics et al. | 2008
- 277
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Radiation Issues Surrounding Very High Energy Ion ImplantationWhite, N.R. / Tokoro, N. / Bell, E. / American Institute of Physics et al. | 2008
- 281
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In-Situ Ion Source Cleaning: Review of Chemical Mechanisms and Evaluation Data at Production FabsKaim, R. / Bishop, S. / Byl, O. / Eldridge, D. / Marganski, P. / Mayer, J. / Sweeney, J. / Yedave, S. / Fuchs, D. / Spreitzer, S. et al. | 2008
- 285
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Layer Transfer with Implant-Induced Defects: A Path to Advanced Engineered SubstratesBourdelle, K.K. / American Institute of Physics et al. | 2008
- 292
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Introduction of the SHX-III System, a Single-Wafer High-Current Ion ImplanterSugitani, M. / Tsukihara, M. / Kabasawa, M. / Ishikawa, K. / Murooka, H. / Ueno, K. / American Institute of Physics et al. | 2008
- 296
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Nissin's New Cluster Ion Implanter: CLARISUmisedo, S. / Hamamoto, N. / Koga, Y. / Une, H. / Maehara, N. / Nagayama, T. / Tanjyo, M. / Nagai, N. / Horsky, T.N. / Goldberg, R.D. et al. | 2008
- 300
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Implant Angle Monitor System of MC3-IISato, F. / Sano, M. / Nakaoka, H. / Fujii, Y. / Kudo, T. / Nakanishi, M. / Koike, M. / Fujino, Y. / American Institute of Physics et al. | 2008
- 304
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Development of a Co-Axial Hot Cathode for Magnetized Ion Source PlasmaMiyamoto, N. / Hamamoto, N. / Imakita, S. / Mendenilla, A.G. / Wada, M. / American Institute of Physics et al. | 2008
- 308
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Advanced Middle-High Energy Range Medium Current Implanter EXCEED9600ANogami, T. / Hino, M. / Kobayashi, T. / Fujita, H. / Matsumoto, T. / American Institute of Physics et al. | 2008
- 312
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High Productivity Implantation ``PARTIAL IMPLANT''Hino, M. / Miyamoto, N. / Sakai, S. / Matsumoto, T. / American Institute of Physics et al. | 2008
- 316
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Increase of Boron Ion Beam Current Extracted from a Multi-Cusp Ion Source in an Ion Doping System with Mass SeparationInouchi, Y. / Dohi, S. / Tanii, M. / Tatemichi, J. / Konishi, M. / Nukayama, M. / Nakao, K. / Orihira, K. / Naito, M. / American Institute of Physics et al. | 2008
- 320
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Beam Uniformity Controllable Ion Source with a Long SlitIkejiri, T. / Zhao, W. / Tanaka, K. / Igo, T. / Kinoyama, T. / Tamura, S. / Yamashita, T. / American Institute of Physics et al. | 2008
- 324
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Next Generation Angle Control for Medium Current and High Energy ImplantersOlson, J.C. / Gupta, A. / Gossmann, H.-J.L. / Rodier, D. / American Institute of Physics et al. | 2008
- 328
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Sources for Low Energy Extreme of Ion ImplantationHershcovitch, A. / Batalin, V.A. / Bugaev, A.S. / Gushenets, V.I. / Johnson, B.M. / Kolomiets, A.A. / Kropachev, G.N. / Kuibeda, R.P. / Kulevoy, T.V. / Masunov, E.S. et al. | 2008
- 332
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Integration of an Axcelis Optima HD Single Wafer High Current Implanter for p- and n-S/D Implants in an Existing Batch Implanter Production LineSchmeide, M. / Kontratenko, S. / Muller, R.P. / Krimbacher, B. / American Institute of Physics et al. | 2008
- 336
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Optima HD Imax: Molecular ImplantTieger, D.R. / Splinter, P.R. / Hsieh, T.J. / Reynolds, W.P. / American Institute of Physics et al. | 2008
- 340
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Beam Current Improvements on the Axcelis Optima HD Imax ImplanterTieger, D.R. / Splinter, P.R. / Hsieh, T.J. / Reynolds, W.P. / Goldberg, R.D. / Jacobson, D.C. / McIntyre, E.K. / Hahto, S.K. / Bilbrough, D.G. / Oved, D. et al. | 2008
- 344
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Metal Ion Sources for Ion Beam ImplantationZhao, W.J. / Zhao, Z.Q. / Ren, X.T. / American Institute of Physics et al. | 2008
- 348
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Broad Ion Beam Extraction from Large Bore ECR Ion Source with Cylindrically Comb-Shaped Magnetic Fields Configuration by Feeding Simultaneously 11 to 13 GHz and 2.45 GHz MicrowavesKato, Y. / Satani, T. / Matsui, Y. / Watanabe, T. / Muramatsu, M. / Tanaka, K. / Asaji, T. / Kitagawa, A. / Sato, F. / Iida, T. et al. | 2008
- 352
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Optimization of Xenon Difluoride Vapor DeliverySweeney, J. / Marganski, P. / Kaim, R. / Wodjenski, M. / Gregg, J. / Yedave, S. / Sergi, S. / Bishop, S. / Eldridge, D. / Zou, P. et al. | 2008
- 356
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Tungsten Transport in an Ion SourceByl, O. / Yedave, S. / Sergi, S. / Sweeney, J. / Bishop, S. / Kaim, R. / Eldridge, D. / American Institute of Physics et al. | 2008
- 360
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Decreasing Beam Auto Tuning Interruption Events with In-Situ Chemical Cleaning on Axcelis GSDFuchs, D. / Spreitzer, S. / Vogl, J. / Bishop, S. / Eldridge, D. / Kaim, R. / American Institute of Physics et al. | 2008
- 364
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Implanter Source Life and Stability Improvement Using In-Situ Chemical CleaningRomig, T. / Newman, D. / Mitchell, M. / Ditzler, K. / Eldridge, D. / Bishop, S. / Mayer, J. / American Institute of Physics et al. | 2008
- 368
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Manufacturing Assessment of an XeF~2 In-Situ Clean Process for Mitigation of Species Cross ContaminationDunn, J.P. / Rolland, J.L. / Lundquist, P. / Bishop, S. / American Institute of Physics et al. | 2008
- 372
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Surface Analytics in Support of the Development of Static AutoClean™-An In-Situ Cleaning Process for Ion ImplantersStawasz, M. / Yedave, S. / Hiscock, L. / Sweeney, J. / Kaim, R. / American Institute of Physics et al. | 2008
- 376
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Development of ``Static'' In-Situ Implanter Chamber CleaningYedave, S. / Sweeney, J. / Byl, O. / Letaj, S. / Wodjenski, M. / Hilgarth, M. / Marganski, P. / Bishop, S. / Eldridge, D. / Kaim, R. et al. | 2008
- 380
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Angle Control on the Optima HE/XE Ion ImplanterBell, E. / Satoh, S. / American Institute of Physics et al. | 2008
- 387
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ClusterBoron™ Implant Alternative to BF~2 PMOS SDEFeudel, T. / Illgen, R. / Kruger, C. / Braun, M. / Sekar, K. / Lee, D. / Krull, W. / American Institute of Physics et al. | 2008
- 391
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B~1~8H~2~2 Implantation for the Source-Drain Extension in 45nm-Node PMOSFETs and BeyondKawasaki, Y. / Endo, S. / Kitazawa, M. / Maruyama, Y. / Yamashita, T. / Kuroi, T. / Yoshimura, H. / Kojima, M. / American Institute of Physics et al. | 2008
- 395
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Improved Re-Crystallization of p^+ Poly-Si Gates with Molecular Ion ImplantationLee, J.-K. / Ju, M.-A. / Oh, J.-G. / Hwang, S.-H. / Jeon, S.-J. / Ku, J.-C. / Park, S. / Lee, K.-W. / Kim, S. / Ra, G.-J. et al. | 2008
- 399
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Approaches to USJ Formation beyond Molecular ImplantationHatem, C. / Renau, A. / Godet, L. / Kontos, A. / Papasouliotis, G. / England, J. / Arevalo, E. / American Institute of Physics et al. | 2008
- 403
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Beam Angular Divergence Effects in Ion ImplantationHorsky, T.N. / Current, M.I. / Hahto, S.K. / Bilbrough, D.G. / Jacobson, D.C. / Krull, W.A. / Goldberg, R.D. / Hamamoto, N. / Umisedo, S. / American Institute of Physics et al. | 2008
- 407
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Infusion Doping for Sub-45nm CMOS Technology NodesKalra, P. / Majhi, P. / Tseng, H.-H. / Jammy, R. / Liu, T.-J.K. / American Institute of Physics et al. | 2008
- 411
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Dopant Activation and Defect Analysis of Ultra-Shallow Junctions Made by Gas Cluster Ion BeamsShao, Y. / Hautala, J. / Larson, L. / Jain, A. / American Institute of Physics et al. | 2008
- 415
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Summary of Industry-Academia Collaboration Projects on Cluster Ion Beam Process TechnologyYamada, I. / Matsuo, J. / Toyoda, N. / American Institute of Physics et al. | 2008
- 419
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Production of Liquid Cluster Ions by Nozzle Beam Source with and without He GasTakaoka, G.H. / Ryuto, H. / Okada, T. / Sugiyama, K. / American Institute of Physics et al. | 2008
- 423
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Investigation of Damage with Cluster Ion Beam Irradiation Using HR-RBSSeki, T. / Aoki, T. / Matsuo, J. / American Institute of Physics et al. | 2008
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Cluster Size Dependence of Etching by Reactive Gas Cluster Ion BeamsToyoda, N. / Yamada, I. / American Institute of Physics et al. | 2008
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Non-Contact Wafer Fabrication Process Using Gas Cluster Ion BeamsToyoda, N. / Isogai, H. / Yamada, I. / American Institute of Physics et al. | 2008
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Characteristics of Cluster Implantation and Low Diffusion AnnealingNagayama, T. / Hamamoto, N. / Umisedo, S. / Tanjyo, M. / Ootsuka, F. / Aoyama, T. / American Institute of Physics et al. | 2008
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Investigation of pMOS Device Matching and Characteristics Using B~1~8H~2~2 ImplantationLee, J. / Choi, J. / An, J. / Ryu, S. / Lee, K.W. / Kim, J. / Ra, G.J. / Kim, S. / Cho, H.T. / American Institute of Physics et al. | 2008
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Emissions Monitoring and Exhaust Analysis for the Axcelis Optima HD IMAX Ion ImplanterWilson, S.M. / Marganski, P. / Sweeney, J. / Roberge, S. / American Institute of Physics et al. | 2008
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Conformal Doping of FINFETs: A Fabrication and Metrology ChallengeVandervorst, W. / Everaert, J.L. / Rosseel, E. / Jurczak, M. / Hoffmann, T. / Eyben, P. / Mody, J. / Zschatzsch, G. / Koelling, S. / Gilbert, M. et al. | 2008
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Plasma Doping-Enabling Technology for High Dose Logic and Memory ApplicationsMiller, T. / Godet, L. / Papasouliotis, G.D. / Singh, V. / American Institute of Physics et al. | 2008
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Basic Aspects of the Formation and Activation of Boron Junctions Using Plasma Immersion Ion ImplantationZschatzsch, G. / Vandervorst, W. / Hoffmann, T. / Goossens, J. / Everaert, J.-L. / del Agua Borniquel, J. / Poon, T. / American Institute of Physics et al. | 2008
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Performance Enhancement of PFET Planar Devices by Plasma Immersion Ion Implantation (P3I)Ortolland, C. / Horiguchi, N. / Kerner, C. / Chiarella, T. / Eyben, P. / Everaert, J.-L. / del Agua Borniquel, J. / Poon, T. / Santhanam, K. / Porshnev, P. et al. | 2008
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Operation and Applications of the Boron Cathodic Arc Ion SourceWilliams, J.M. / Klepper, C.C. / Chivers, D.J. / Hazelton, R.C. / Freeman, J.H. / American Institute of Physics et al. | 2008
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Ultra-Shallow Junctions Fabrication by Plasma Immersion Implantation on PULSION® Followed by Laser Thermal ProcessingTorregrosa, F. / Etienne, H. / Sempere, G. / Mathieu, G. / Roux, L. / Vervisch, V. / Delaporte, P. / Sarnet, T. / Pap, A. / Kis-Szabo, K. et al. | 2008
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Fabrication of Ultra-Shallow Junctions on 300 mm Wafers Using the Plasma Immersion Implanter PULSION® Followed by Spike Annealing Using LEVITOR FurnaceTorregrosa, F. / Etienne, H. / Sempere, G. / Mathieu, G. / Roux, L. / Milesi, F. / Gonzatti, F. / Pages, X. / American Institute of Physics et al. | 2008
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Boron Profile Sharpening in Ultra-Shallow p^+-n Junction Produced by Plasma Immersion Ion Implantation from BF~3 PlasmaLukichev, V. / Rudenko, K. / Orlikovsky, A. / Pustovit, A. / Vyatkin, A. / American Institute of Physics et al. | 2008
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PULSION®: A Versatile 200 to 300 mm Bridge Tool Plasma Immersion Ion Implanter for Ultra-Shallow Doping and Nanotechnology ApplicationsTorregrosa, F. / Etienne, H. / Sempere, G. / Mathieu, G. / Roux, L. / Milesi, F. / Gonzatti, F. / American Institute of Physics et al. | 2008
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SIMS/ARXPS-A New Technique of Retained Dopant Dose and Profile Measurement of Low Energy Doping ProcessesQin, S. / Zhuang, K. / Lu, S. / McTeer, A. / Morinville, W. / Noehring, K. / American Institute of Physics et al. | 2008
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Automotive SOI-BCD Technology Using Bonded WafersHimi, H. / Fujino, S. / American Institute of Physics et al. | 2008
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Threshold Voltage Engineering by Lanthanide Doping of the MOS Gate StackFet, A. / Haublein, V. / Ryssel, H. / American Institute of Physics et al. | 2008
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Improvement of Contact Resistance with Molecular Ion ImplantationLee, K.W. / Lee, J.K. / Oh, J.G. / Huh, T.H. / Ju, M.A. / Jeon, S.J. / Ku, J.C. / Park, S.K. / Kim, S. / Yoon, D.H. et al. | 2008
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Development of Compact Electron Cyclotron Resonance Ion Source with Permanent Magnets for High-Energy Carbon-Ion TherapyMuramatsu, M. / Kitagawa, A. / Iwata, Y. / Hojo, S. / Sakamoto, Y. / Sato, S. / Ogawa, H. / Yamada, S. / Yoshida, Y. / American Institute of Physics et al. | 2008
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The Effect of the Dose and Energy of a Pre-Silicide Implant on Nickel Silicide FormationRice, J.H. / American Institute of Physics et al. | 2008
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Development of an Ion Beam Irradiation System for Liquid Crystal Alignment Layer ProductionMatsumoto, T. / Kinoshita, Y. / Tanii, M. / Tatemichi, J. / Konishi, M. / Naito, M. / American Institute of Physics et al. | 2008
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Development of Electron Cyclotron Resonance Ion Source for Synthesis of Endohedral MetallofullerenesTanaka, K. / Muramatsu, M. / Uchida, T. / Biri, S. / Asaji, T. / Shima, K. / Hanajiri, T. / Kitagawa, A. / Kato, Y. / Yoshida, Y. et al. | 2008
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Pure Material Vapor Source by Induction Heating Evaporator for an Electron Cyclotron Resonance Ion SourceMatsui, Y. / Watanabe, T. / Satani, T. / Muramatsu, M. / Tanaka, K. / Kitagawa, A. / Yoshida, Y. / Sato, F. / Kato, Y. / Iida, T. et al. | 2008
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Ion beam extraction from large bore 11 GHz to 13 GHz ECR ion source with a pair of cylindrically comb-shaped magnetic fieldsWatanabe, T. / Satani, T. / Matsui, Y. / Sato, F. / Kato, Y. / Iida, T. et al. | 2008
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Ion Beam Extraction from Large Bore 11 to 13 GHz ECR Ion Source with a Pair of Cylindrically Comb-Shaped Magnetic FieldsWatanabe, T. / Satani, T. / Matsui, Y. / Sato, F. / Kato, Y. / Iida, T. / American Institute of Physics et al. | 2008
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Ion Implantation into Nanoparticulate Functional LayersWalther, S. / Jank, M.P.M. / Ebbers, A. / Ryssel, H. / American Institute of Physics et al. | 2008
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Depth Profiling of N and C in Ion Implanted ZnO and Si Using Deuterium Induced Nuclear Reaction AnalysisKennedy, J. / Murmu, P. / Markwitz, A. / American Institute of Physics et al. | 2008