Anisotropic universal conductance fluctuations in disordered quantum wires with Rashba and Dresselhaus spin-orbit interaction and an applied in-plane magnetic field (English)
- New search for: Scheid, Matthias
- New search for: Adagideli, Inanc
- New search for: Nitta, Junsaku
- New search for: Richter, Klaus
- New search for: Scheid, Matthias
- New search for: Adagideli, Inanc
- New search for: Nitta, Junsaku
- New search for: Richter, Klaus
In:
Semiconductor Science and Technology
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24
, 6
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064005/1-064005/6
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2009
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ISSN:
- Article (Journal) / Print
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Title:Anisotropic universal conductance fluctuations in disordered quantum wires with Rashba and Dresselhaus spin-orbit interaction and an applied in-plane magnetic field
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Contributors:Scheid, Matthias ( author ) / Adagideli, Inanc ( author ) / Nitta, Junsaku ( author ) / Richter, Klaus ( author )
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Published in:Semiconductor Science and Technology ; 24, 6 ; 064005/1-064005/6
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Publisher:
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Publication date:2009
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Size:6 Seiten, 4 Bilder, 1 Tabelle, 32 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 24, Issue 6
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 060301
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The effects of spin-orbit interaction on charge transportLaurens Molenkamp / Junsaku Nitta et al. | 2009
- 60301
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EDITORIAL: The effects of spin-orbit interaction on charge transport| 2009
- 064001
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Spin–orbit coupling in GaxIn1−xAs/InP two-dimensional electron gases and quantum wire structuresSchäpers, Th / Guzenko, V A / Bringer, A / Akabori, M / Hagedorn, M / Hardtdegen, H et al. | 2009
- 064002
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Spin–orbit interaction and transport in GaAs two-dimensional holesHabib, B / Shayegan, M / Winkler, R et al. | 2009
- 064003
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Hall effects and related phenomena in disordered Rashba 2DEGInoue, Jun-ichiro / Kato, Takashi / Bauer, Gerrit E W / Molenkamp, Laurens W et al. | 2009
- 064004
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A new mechanism of electric dipole spin resonance: hyperfine coupling in quantum dotsLaird, E A / Barthel, C / Rashba, E I / Marcus, C M / Hanson, M P / Gossard, A C et al. | 2009
- 064005
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Anisotropic universal conductance fluctuations in disordered quantum wires with Rashba and Dresselhaus spin–orbit interaction and an applied in-plane magnetic fieldScheid, Matthias / Adagideli, İnanç / Nitta, Junsaku / Richter, Klaus et al. | 2009
- 064006
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What can we learn about the dynamics of transported spins by measuring shot noise in spin–orbit-coupled nanostructures?Nikolić, Branislav K / Dragomirova, Ralitsa L et al. | 2009
- 064007
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Spin–orbit interaction and weak localization in heterostructuresGlazov, M M / Golub, L E et al. | 2009
- 065001
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Thorium-229m1/m2–powered heterojunction GRPVCs: an interface between nuclear and semiconductor physicsLiakos, John K et al. | 2009
- 065002
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Effects of the sapphire substrate thickness on the performances of GaN-based LEDsLam, K T / Hung, S C / Shen, C F / Liu, C H / Sun, Y X / Chang, S J et al. | 2009
- 065003
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Analysis of surface dark current dependent upon surface passivation in APD based on GaAsSong, Hong Joo / Roh, Cheong Hyun / Lee, Jun Ho / Choi, Hong Goo / Kim, Dong Ho / Park, Jung Ho / Hahn, Cheol-Koo et al. | 2009
- 065004
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Dissipation and decoherence in nanodevices: a generalized Fermi's golden ruleTaj, D / Iotti, R C / Rossi, F et al. | 2009
- 065005
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Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: IChaujar, Rishu / Kaur, Ravneet / Saxena, Manoj / Gupta, Mridula / Gupta, R S et al. | 2009
- 065005/1
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Two-dimensional threshold voltage model and design consideration for gate electrode work function engineered recessed channel nanoscale MOSFET: IChaujar, Rishu / Kaur, Ravneet / Saxena, Manoj / Gupta, Mridula / Gupta, R.S. et al. | 2009
- 065006
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Interfacial growth at the HfO2/Si interface during annealing in oxygen ambientJiang, Ran / Li, Zifeng et al. | 2009
- 065007
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Comparative study on the energy efficiency of logic gates based on single-electron transistor technologyChoi, Changmin / Lee, Jieun / Park, Sungwook / Chung, In-Young / Kim, Chang-Joon / Park, Byung-Gook / Kim, Dong Myong / Kim, Dae Hwan et al. | 2009
- 065008
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Advantages and disadvantages of sulfur passivation of InAs/GaSb superlattice waveguide photodiodesHoffmann, J / Lehnert, T / Hoffmann, D / Fouckhardt, H et al. | 2009
- 065009
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Extremely sharp electroluminescence from Er-doped siliconKudryavtsev, K E / Shmagin, V B / Shengurov, D V / Krasilnik, Z F et al. | 2009
- 065010
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Wet etching and chemical polishing of InAs/GaSb superlattice photodiodesChaghi, R / Cervera, C / Aït-Kaci, H / Grech, P / Rodriguez, J B / Christol, P et al. | 2009
- 065011
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Antisymmetric magnetoresistance anomalies and magnetic domain structure in GaMnAs/InGaAs layersDesrat, W / Kamara, S / Terki, F / Charar, S / Sadowski, J / Maude, D K et al. | 2009
- 065012
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The effect of phonon extraction level separation on the performance of three-well resonant-phonon terahertz quantum-cascade lasersLi, H / Cao, J C / Luo, H / Laframboise, S R / Wasilewski, Z R / Liu, H C et al. | 2009