Drain current model for nanoscale double-gate MOSFETs (English)
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In:
Solid State Electronics
;
53
, 9
;
1001-1008
;
2009
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ISSN:
- Article (Journal) / Print
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Title:Drain current model for nanoscale double-gate MOSFETs
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Contributors:Hariharan, V. ( author ) / Thakker, R. ( author ) / Singh, K. ( author ) / Sachid, A.B. ( author ) / Patil, M.B. ( author ) / Vasi, J. ( author ) / Rao, V.R. ( author )
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Published in:Solid State Electronics ; 53, 9 ; 1001-1008
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Publisher:
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Publication date:2009
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Size:8 Seiten, 27 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 53, Issue 9
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 921
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TCAD-based demonstration of improved spacer select gate EEPROM cell architecture| 2009
- 925
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Optimization of the back contact in c-Si solar cellsYang, S.M. / Plá, J. et al. | 2009
- 931
-
A K-band differential Colpitts cross-coupled VCO in 0.13μm CMOSJang, Sheng-Lyang / Lee, Chien-Feng / Chang, Chia-Wei et al. | 2009
- 931
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A K-band differential Colpitts cross-coupled VCO in 0.13mm CMOSJang, S. L. / Lee, C. F. / Chang, C. W. et al. | 2009
- 935
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Comparison of p-i-n and n-i-n carbon nanotube FETs regarding high-frequency performancePulfrey, D.L. / Chen, Li et al. | 2009
- 940
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Wide temperature operational range of a 1310nm AlGaInAs MQW-DFB laser with silicon oxynitride as a facet coatingWang, Chi-Yu / Hsu, Jin-Cheng / Shiao, Hung-Pin et al. | 2009
- 944
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Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)Lefranc, P. / Planson, D. / Morel, H. / Bergogne, D. et al. | 2009
- 955
-
The improvement of ohmic contact of Ti/Al/Ni/Au to AlGaN/GaN HEMT by multi-step annealing methodFeng, Qian / Li, Li-Mei / Hao, Yue / Ni, Jin-Yu / Zhang, Jin-Cheng et al. | 2009
- 959
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Impact of metal silicide layout covering source/drain diffusion region on minimization of parasitic resistance of triple-gate SOI MOSFET and proposal of practical design guidelineOmura, Yasuhisa / Yoshimoto, Kazuhisa / Hayashi, Osanori / Wakabayashi, Hitoshi / Yamakawa, Shinya et al. | 2009
- 972
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Double barrier nature of Au/p-GaTe Schottky contact: Linearization of Richardson plotGülnahar, Murat / Efeoğlu, Hasan et al. | 2009
- 979
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Comparison of theory and experiment in a modified BICFET/HFET structureYao, J. / Cai, J. / Opper, H. / Basilica, R. / Garber, R. / Taylor, G.W. et al. | 2009
- 988
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Particle swarm optimization versus genetic algorithms to study the electron mobility in wurtzite GaN-based devicesDjeffal, F. / Lakhdar, N. / Meguellati, M. / Benhaya, A. et al. | 2009
- 993
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Tunable patterned ferroelectric parallel-plate varactors for matching networkZhang, Xiao-Yu / Wang, P. / Xu, Feng / Ong, C.K. et al. | 2009
- 998
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A comparative study of the DRAM leakage mechanism for planar and recessed channel MOSFETsLee, Myoung Jin / Baek, Chang-Ki / Park, Sooyoung / Chung, In-Young / Park, Young June et al. | 2009
- 1001
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Drain current model for nanoscale double-gate MOSFETsHariharan, Venkatnarayan / Thakker, Rajesh / Singh, Karmvir / Sachid, Angada B. / Patil, M.B. / Vasi, Juzer / Rao, V. Ramgopal et al. | 2009
- 1009
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Transport properties in semiconductor-gas discharge electronic devicesSadiq, Y. / Albarzanji, A.O. / Alekperov, S.D. / Salamov, B.G. et al. | 2009
- 1016
-
A spin field effect transistor using stray magnetic fieldsKoo, Hyun Cheol / Eom, Jonghwa / Chang, Joonyeon / Han, Suk-Hee et al. | 2009
- 1020
-
An extended drain current conductance extraction method and its application to DRAM support and array devicesJoodaki, Mojtaba et al. | 2009
- 1032
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Selective wet etching of Al0.7Ga0.3As layer in concentrated HCl solution for peeling off GaAs microtipsSun, Xiaojuan / Hu, Lizhong / Song, Hang / Li, Zhiming / Li, Dabing / Jiang, Hong / Miao, Guoqing et al. | 2009
- 1036
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The formation of polycrystalline-Si thin-film transistors by using large-angle-tilt-implantation of dopant through gate sidewall spacerJuang, Miin-Horng / Huang, C.W. / Chang, C.W. / Shye, D.C. / Hwang, C.C. / Wang, J.L. / Jang, S.L. et al. | 2009
- 1041
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A compact model of fringing field induced parasitic capacitance for deep sub-micrometer MOSFETsLiu, Xi / Jin, Xiaoshi / Lee, Jong-Ho et al. | 2009
- 1046
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Feasibility study on rapid thermal processingKarle, S.C. / Shaligram, A.D. et al. | 2009
- 1050
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Thin-film transistors with controllable mobilities based on layer-by-layer self-assembled carbon nanotube compositesXue, Wei / Cui, Tianhong et al. | 2009
- 1056
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Efficiency enhancement of organic light emitting diodes by NaOH surface treatment of the ITO anodeCusumano, P. et al. | 2009
- IFC
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Editorial Board| 2009