Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 degrees C (English)
- New search for: Cherenack, K.H.
- New search for: Hekmatshoar, B.
- New search for: Sturm, James C.
- New search for: Wagner, Sigurd
- New search for: Cherenack, K.H.
- New search for: Hekmatshoar, B.
- New search for: Sturm, James C.
- New search for: Wagner, Sigurd
In:
IEEE Transactions on Electron Devices
;
57
, 10
;
2381-2389
;
2010
-
ISSN:
- Article (Journal) / Print
-
Title:Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 degrees C
-
Contributors:Cherenack, K.H. ( author ) / Hekmatshoar, B. ( author ) / Sturm, James C. ( author ) / Wagner, Sigurd ( author )
-
Published in:IEEE Transactions on Electron Devices ; 57, 10 ; 2381-2389
-
Publisher:
-
Publication date:2010
-
Size:9 Seiten, 45 Quellen
-
ISSN:
-
Coden:
-
DOI:
-
Type of media:Article (Journal)
-
Type of material:Print
-
Language:English
-
Keywords:
-
Source:
Table of contents – Volume 57, Issue 10
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 2363
-
Review Articles Physics, Technology, and Modeling of Complementary Asymmetric MOSFETsBulucea, C et al. | 2010
- 2363
-
Physics, Technology, and Modeling of Complementary Asymmetric MOSFETsBulucea, Constantin / Bahl, Sandeep R / French, William D / Jeng-Jiun Yang, / Francis, Pascale / Harjono, Tikno / Krishnamurthy, Vijay / Tao, Jon / Parker, Courtney et al. | 2010
- 2381
-
Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 ^oCCherenack, K.H. / Hekmatshoar, B. / Sturm, J.C. / Wagner, S. et al. | 2010
- 2381
-
Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 $^{\circ}\hbox{C}$Cherenack, K H / Hekmatshoar, B / Sturm, James C / Wagner, Sigurd et al. | 2010
- 2381
-
Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 degrees CCherenack, K.H. / Hekmatshoar, B. / Sturm, James C. / Wagner, Sigurd et al. | 2010
- 2381
-
Silicon and Column IV Semiconductor Devices Self-Aligned Amorphous Silicon Thin-Film Transistors Fabricated on Clear Plastic at 300 °CCherenack, K H et al. | 2010
- 2390
-
A Deterministic Boltzmann Equation Solver Based on a Higher Order Spherical Harmonics Expansion With Full-Band EffectsSung-Min Hong, / Matz, Gregor / Jungemann, Christoph et al. | 2010
- 2398
-
A New Class of Charge-Trap Flash Memory With Resistive Switching MechanismsHo-Myoung An, / Eui Bok Lee, / Hee-Dong Kim, / Yu Jeong Seo, / Tae Geun Kim, et al. | 2010
- 2405
-
Analytic Model for the Surface Potential and Drain Current in Negative Capacitance Field-Effect TransistorsJimenez, David / Miranda, Enrique / Godoy, Andrés et al. | 2010
- 2410
-
Dual-$k$ Spacer Device Architecture for the Improvement of Performance of Silicon n-Channel Tunnel FETsVirani, H G / Adari, R B R / Kottantharayil, A et al. | 2010
- 2410
-
Dual-κ Spacer Device Architecture for the Improvement of Performance of Silicon n-Channel Tunnel FETsVirani, H G et al. | 2010
- 2410
-
Dual- kappa Spacer Device Architecture for the Improvement of Performance of Silicon n-Channel Tunnel FETsVirani, H.G. / Adari, R.B.R. / Kottantharayil, A. et al. | 2010
- 2418
-
Hierarchical Simulation of Statistical Variability: From 3-D MC With “ ab initio” Ionized Impurity Scattering to Statistical Compact ModelsKovac, Urban / Alexander, Craig / Roy, Gareth / Riddet, Craig / Binjie Cheng, / Asenov, Asen et al. | 2010
- 2427
-
Shape Effect of Silicon Nitride Subwavelength Structure on Reflectance for Silicon Solar CellsChandra Sahoo, K / Yiming Li, / Chang, E Yi et al. | 2010
- 2434
-
Intrinsic Gain in Self-Aligned Polysilicon Source-Gated TransistorsSporea, Radu A / Trainor, Michael J / Young, Nigel D / Shannon, J M / Silva, S Ravi P et al. | 2010
- 2440
-
Channel Length and Threshold Voltage Dependence of Transistor Mismatch in a 32-nm HKMG TechnologyHook, Terence B / Johnson, Jeffrey B / Jin-Ping Han, / Pond, Andrew / Shimizu, Takashi / Tsutsui, Gen et al. | 2010
- 2448
-
Electronic Transport in Laterally Asymmetric Channel MOSFET for RF Analog ApplicationsRengel, Raúl / Martin, María Jesús et al. | 2010
- 2455
-
A Direct Method for Charge Collection Probability Computation Using the Reciprocity TheoremKurniawan, Oka / Chee Chin Tan, / Ong, Vincent K S / Erping Li, / Humphreys, Colin J et al. | 2010
- 2462
-
20% Efficient Screen-Printed Cells With Spin-On-Dielectric-Passivated Boron Back-Surface FieldDas, A / Meemongkolkiat, V / Kim, D / Ramanathan, S / Rohatgi, A et al. | 2010
- 2470
-
Avalanche Breakdown Delay in ESD Protection DiodesJohnsson, David / Pogany, Dionyz / Willemen, Joost / Gornik, Erich / Stecher, Matthias et al. | 2010
- 2477
-
A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETsRuiz, Francisco J García / Tienda-Luna, Isabel María / Godoy, Andrés / Donetti, Luca / Gamiz, Francisco et al. | 2010
- 2484
-
A New Multipulse Technique for Probing Electron Trap Energy Distribution in High- $\kappa$ Materials for Flash Memory ApplicationXue Feng Zheng, / Wei Dong Zhang, / Govoreanu, Bogdan / Jian Fu Zhang, / van Houdt, Jan et al. | 2010
- 2484
-
A New Multipulse Technique for Probing Electron Trap Energy Distribution in High-κ Materials for Flash Memory ApplicationZheng, X F et al. | 2010
- 2493
-
Physical Origins of Threshold Voltage Variation Enhancement in Si(110) n/pMOSFETsSaitoh, Masumi / Yasutake, Nobuaki / Nakabayashi, Yukio / Uchida, Ken / Numata, Toshinori et al. | 2010
- 2499
-
Transient Simulation to Analyze Flash Memory Erase Improvements Due to Germanium Content in the SubstrateWolfson, Scott C / Ho, Fat Duen et al. | 2010
- 2504
-
Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part I: Modeling, Analysis, and Experimental ValidationDadgour, Hamed F / Endo, Kazuhiko / De, Vivek K / Banerjee, K et al. | 2010
- 2515
-
Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit DesignDadgour, Hamed F / Endo, Kazuhiko / De, Vivek K / Banerjee, Kaustav et al. | 2010
- 2526
-
Insulating Halos to Boost Planar NMOSFET PerformanceWen-Wei Hsu, / Chao-Yun Lai, / Chee Wee Liu, / Chih-Hsin Ko, / Ta-Ming Kuan, / Tzu-Juei Wang, / Wen-Chin Lee, / Wann, Clement H et al. | 2010
- 2531
-
Cross-Point Memory Array Without Cell Selectors—Device Characteristics and Data Storage Pattern DependenciesLiang, Jiale / Wong, H.-S Philip et al. | 2010
- 2539
-
Electrical TCAD Simulations of a Germanium pMOSFET TechnologyHellings, Geert / Eneman, Geert / Krom, Raymond / De Jaeger, B / Mitard, Jérôme / De Keersgieter, An / Hoffmann, Thomas / Meuris, Marc / De Meyer, Kristin et al. | 2010
- 2547
-
A Kink-Effect-Free Poly-Si Thin-Film Transistor With Current and Electric Field Split Structure DesignFeng-Tso Chien, / Yi-Ju Chen, et al. | 2010
- 2556
-
Voltage-Driven Partial-RESET Multilevel Programming in Phase-Change MemoriesBraga, Stefania / Sanasi, Alessandro / Cabrini, Alessandro / Torelli, Guido et al. | 2010
- 2564
-
Tunnel Diode Modeling, Including Nonlocal Trap-Assisted Tunneling: A Focus on III–V Multijunction Solar Cell SimulationBaudrit, Mathieu / Algora, Carlos et al. | 2010
- 2564
-
Compound Semiconductor Devices Tunnel Diode Modeling, Including Nonlocal Trap-Assisted Tunneling: A Focus on III-V Multijunction Solar Cell SimulationBaudrit, M et al. | 2010
- 2572
-
Monte Carlo Study of the Dynamic Performance of a 100-nm-Gate InAlAs/InGaAs Velocity Modulation TransistorVasallo, Beatriz G / Wichmann, Nicolas / Bollaert, Sylvain / Roelens, Yannick / Cappy, Alain / González, Tomás / Pardo, Daniel / Mateos, J et al. | 2010
- 2579
-
Emerging N-Face GaN HEMT Technology: A Cellular Monte Carlo StudyMarino, Fabio Alessio / Saraniti, Marco / Faralli, Nicolas / Ferry, David K / Goodnick, Stephen M / Guerra, Diego et al. | 2010
- 2587
-
InAlAs/InGaAs Interband Tunnel Diodes for SRAMSutar, Surajit / Qin Zhang, / Seabaugh, Alan et al. | 2010
- 2594
-
Novel Metamorphic HEMTs With Highly Doped InGaAs Source/Drain Regions for High Frequency ApplicationsSahoo, Kartika Chandra / Chien-I Kuo, / Yiming Li, / Chang, Edward Yi et al. | 2010
- 2599
-
Impact of Semiconductor and Interface-State Capacitance on Metal/High-k/GaAs Capacitance–Voltage CharacteristicsSonnet, A M / Hinkle, C L / Dawei Heh, / Bersuker, G et al. | 2010
- 2607
-
A Compact Model for Undoped Symmetric Double-Gate Polysilicon Thin-Film TransistorsJunkai Huang, / Wanling Deng, / Xueren Zheng, / Xiaozhou Jiang, et al. | 2010
- 2607
-
Thin Film Devices A Compact Model for Undoped Symmetric Double-Gate Polysilicon Thin-Film TransistorsHuang, J et al. | 2010
- 2616
-
Optoelectronics, Displays, and Imaging High-Speed Reset Waveform for PDP With Erase Address DischargeJung, J-C et al. | 2010
- 2616
-
High-Speed Reset Waveform for PDP With Erase Address DischargeJae-Chul Jung, / Ki-Woong Whang, et al. | 2010
- 2624
-
Pulsewidth Modulation With Current Uniformization for AM-OLEDsKimura, Mutsumi / Suzuki, Daisuke / Koike, Masamichi / Sawamura, Shigeki / Kato, Masakazu et al. | 2010
- 2631
-
Impact Ionization in InAs Electron Avalanche PhotodiodesMarshall, Andrew R J / David, John P R / Chee Hing Tan, et al. | 2010
- 2639
-
Boosting Green GaInN/GaN Light-Emitting Diode Performance by a GaInN Underlying LayerYong Xia, / Wenting Hou, / Liang Zhao, / Mingwei Zhu, / Detchprohm, Theeradetch / Wetzel, Christian et al. | 2010
- 2644
-
Influence of Gold Nanoparticles on the Characteristics of Plasma Display PanelsWoo Hyun Kim, / Kwan Hyun Cho, / Kyung Cheol Choi, / Do Youb Kim, / Park, O Ok et al. | 2010
- 2651
-
Light Extraction Study on Thin-Film GaN Light-Emitting Diodes With Electrodes Covering by Wafer Bonding and Textured SurfacesRay-Hua Horng, / Yi-Anne Lu, / Dong-Sing Wuu, et al. | 2010
- 2655
-
Solid-State Power and High Voltage Devices Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient StressesMalobabic, S et al. | 2010
- 2655
-
Analysis of Safe Operating Area of NLDMOS and PLDMOS Transistors Subject to Transient StressesMalobabic, S / Salcedo, J A / Hajjar, J / Liou, J J et al. | 2010
- 2664
-
Influence of Emitter Width and Emitter–Base Distance on the Current Gain in 4H-SiC Power BJTsBuono, Benedetto / Ghandi, Reza / Domeij, Martin / Malm, Bengt Gunnar / Zetterling, Carl-Mikael / Östling, Mikael et al. | 2010
- 2671
-
HiSIM-HV: A Compact Model for Simulation of High-Voltage MOSFET CircuitsOritsuki, Y / Yokomichi, M / Kajiwara, T / Tanaka, A / Sadachika, N / Miyake, M / Kikuchihara, H / Johguchi, K / Feldmann, U / Mattausch, H J et al. | 2010
- 2679
-
High-Density MIM Capacitors With Porous Anodic Alumina DielectricHourdakis, E / Nassiopoulou, A G et al. | 2010
- 2679
-
Materials, Processing, and Packaging High-Density MIM Capacitors With Porous Anodic Alumina DielectricHourdakis, E et al. | 2010
- 2684
-
Electrical Characteristics of the Concentric-Shape Carbon Nanotube Network Device in pH Buffer SolutionJun Ho Cheon, / Jaeheung Lim, / Sung Min Seo, / Jun-Myung Woo, / Seok Hyang Kim, / Yongjoo Kwon, / Jung Woo Ko, / Tae June Kang, / Yong Hyup Kim, / Young June Park, et al. | 2010
- 2690
-
Solid-State Device Phenomena Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory ArraysBoniardi, M et al. | 2010
- 2690
-
Statistics of Resistance Drift Due to Structural Relaxation in Phase-Change Memory ArraysBoniardi, Mattia / Ielmini, Daniele / Lavizzari, Simone / Lacaita, Andrea L / Redaelli, Andrea / Pirovano, Agostino et al. | 2010
- 2697
-
Observation of Slow Oxide Traps at MOSFETs Having Metal/High-k Gate Dielectric Stack in Accumulation ModeHeung-Jae Cho, / Younghwan Son, / Byoungchan Oh, / Sanghoon Lee, / Jong-Ho Lee, / Byung-Gook Park, / Hyungcheol Shin, et al. | 2010
- 2704
-
on-State Hot Carrier Degradation in Drain-Extended NMOS TransistorsVarghese, Dhanoop / Moens, Peter / Alam, Muhammad Ashraful et al. | 2010
- 2711
-
Interconnects for Novel State Variables: Performance Modeling and Device and Circuit ImplicationsRakheja, Shaloo / Naeemi, Azad et al. | 2010
- 2719
-
Thickness and Temperature Dependence of Dielectric Reliability Characteristics in Cerium Dioxide Thin FilmFu-Chien Chiu, et al. | 2010
- 2726
-
A Novel Trapping/Detrapping Model for Defect Profiling in High- $k$ Materials Using the Two-Pulse Capacitance–Voltage TechniqueAguado, D Ruiz / Govoreanu, B / Zhang, W Dong / Jurczak, M / De Meyer, K / Van Houdt, J et al. | 2010
- 2736
-
Evaluation of Transient Behavior of Polysilicon-Bound Diode for Fast ESD ApplicationsYou Li, / Liou, Juin J et al. | 2010
- 2744
-
An Artificial Neural Network at Device Level Using Simplified Architecture and Thin-Film TransistorsKasakawa, T / Tabata, H / Onodera, R / Kojima, H / Kimura, M / Hara, H / Inoue, S et al. | 2010
- 2744
-
Molecular and Organic Devices An Artificial Neural Network at Device Level Using Simplified Architecture and Thin-Film TransistorsKasakawa, T et al. | 2010
- 2751
-
Sensors and Actuators Design, Simulation, and Characterization of Variable Inductor With Electrostatic Actuation Fabricated by Using Surface Micromachining TechnologyFang, D-M et al. | 2010
- 2751
-
Design, Simulation, and Characterization of Variable Inductor With Electrostatic Actuation Fabricated by Using Surface Micromachining TechnologyDong-Ming Fang, / Xiu-Han Li, / Quan Yuan, / Hai-Xia Zhang, et al. | 2010
- 2756
-
Low-Cost ZnO-Based Ultraviolet–Infrared Dual-Band Detector Sensitized With PbS Quantum DotsJayaweera, P Viraj Vishwakantha / Pitigala, P K D Duleepa P / Jia Feng Shao, / Tennakone, Kirthi / Perera, A G Unil / Jayaweera, Pradeep M / Baltrusaitis, Jonas et al. | 2010
- 2761
-
CMOS Open-Gate Ion-Sensitive Field-Effect Transistors for Ultrasensitive Dopamine DetectionDong-Che Li, / Po-Hung Yang, / Lu, M S.-C et al. | 2010
- 2768
-
Operation of a Ka-band Harmonic-Multiplying Gyrotron Traveling-Wave TubeJirun Luo, / Chongqing Jiao, / Yuantao Luan, / Guangjiang Yuan, / Wei Guo, / Min Zhu, / Yansheng Zhang, et al. | 2010
- 2768
-
Vacuum Electron Devices Operation of a Ka-band Harmonic-Multiplying Gyrotron Traveling-Wave TubeLuo, J et al. | 2010
- 2774
-
BRIEF Comparative Study of 1/f Noise Degradation Caused by Fowler-Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETsWei, C et al. | 2010
- 2774
-
Comparative Study of 1/f Noise Degradation Caused by Fowler-Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETsWei, C. / Xiong, Y.-Z. / Zhou, X. / Singh, N. / Yuan, X.-J. / Lo, G.Q. / Chan, L. / Kwong, D.-L. et al. | 2010
- 2774
-
Comparative Study of $\hbox{1}/f$ Noise Degradation Caused by Fowler–Nordheim Tunneling Stress in Silicon Nanowire Transistors and FinFETsChengqing Wei, / Yong-Zhong Xiong, / Xing Zhou, / Singh, Navab / Xiao-Jun Yuan, / Guo Qiang Lo, / Lap Chan, / Dim-Lee Kwong, et al. | 2010
- 2780
-
Call for Nominations-Electron Devices Society Administrative Committee| 2010
- C1
-
Table of contents| 2010
- C2
-
IEEE Transactions on Electron Devices publication information| 2010
- C3
-
IEEE Transactions on Electron Devices information for authors| 2010