Investigation of charge-trap memories with AlN based band engineered storage layers (English)
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In:
Solid State Electronics
;
58
, 1
;
68-74
;
2011
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ISSN:
- Article (Journal) / Print
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Title:Investigation of charge-trap memories with AlN based band engineered storage layers
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Contributors:Molas, G. ( author ) / Colonna, J.P. ( author ) / Kies, R. ( author ) / Belhachemi, D. ( author ) / Bocquet, M. ( author ) / Gely, M. ( author ) / Vidal, V. ( author ) / Brianceau, P. ( author ) / Martinez, E. ( author ) / Papon, A.M. ( author )
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Published in:Solid State Electronics ; 58, 1 ; 68-74
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Publisher:
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Publication date:2011
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Size:7 Seiten, 12 Quellen
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ISSN:
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Coden:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 58, Issue 1
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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ForewordDeleruyelle, Damien / Iannaccone, Giuseppe et al. | 2011
- 1
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ForewardDeleruyelle, D. / Iannaccone, G. et al. | 2011
- 2
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Post-manufacturing, 17-times acceptable raw bit error rate enhancement, dynamic codeword transition ECC scheme for highly reliable solid-state drives, SSDsTanakamaru, Shuhei / Fukuda, Mayumi / Higuchi, Kazuhide / Esumi, Atsushi / Ito, Mitsuyoshi / Li, Kai / Takeuchi, Ken et al. | 2010
- 11
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Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memoriesBoniardi, Mattia / Ielmini, Daniele / Tortorelli, Innocenzo / Redaelli, Andrea / Pirovano, Agostino / Allegra, Mario / Magistretti, Michele / Bresolin, Camillo / Erbetta, Davide / Modelli, Alberto et al. | 2010
- 17
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A fast and reliable method used to investigate the size-dependent retention lifetime of a phase-change line cellGoux, L. / Hurkx, G.A.M. / Wang, X.P. / Delhougne, R. / Attenborough, K. / Gravesteijn, D. / Wouters, D. / Gonzalez, J. Perez et al. | 2010
- 23
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Empirical investigation of SET seasoning effects in Phase Change Memory arraysZambelli, C. / Chimenton, A. / Olivo, P. et al. | 2010
- 28
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Highly-scalable disruptive reading and restoring scheme for Gb-scale SPRAM and beyondTakemura, R. / Kawahara, T. / Ono, K. / Miura, K. / Matsuoka, H. / Ohno, H. et al. | 2010
- 34
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A 1.0V power supply, 9.3GB/s write speed, Single-Cell Self-Boost program scheme for high performance ferroelectric NAND flash SSDMiyaji, Kousuke / Noda, Shinji / Hatanaka, Teruyoshi / Takahashi, Mitsue / Sakai, Shigeki / Takeuchi, Ken et al. | 2010
- 42
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Control of filament size and reduction of reset current below 10 mu A in NiO resistance switching memoriesNardi, F. / Ielmini, D. / Cagli, C. / Spiga, S. / Fanciulli, M. / Goux, L. / Wouters, D. J. et al. | 2011
- 42
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Control of filament size and reduction of reset current below 10μA in NiO resistance switching memoriesNardi, F. / Ielmini, D. / Cagli, C. / Spiga, S. / Fanciulli, M. / Goux, L. / Wouters, D.J. et al. | 2010
- 48
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Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheetKinoshita, K. / Okutani, T. / Tanaka, H. / Hinoki, T. / Agura, H. / Yazawa, K. / Ohmi, K. / Kishida, S. et al. | 2010
- 54
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Demonstration of Conductive Bridging Random Access Memory (CBRAM) in logic CMOS processGopalan, C. / Ma, Y. / Gallo, T. / Wang, J. / Runnion, E. / Saenz, J. / Koushan, F. / Blanchard, P. / Hollmer, S. et al. | 2010
- 62
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Comparative study of non-polar switching behaviors of NiO- and HfO2-based oxide resistive-RAMsJousseaume, V. / Fantini, A. / Nodin, J.F. / Guedj, C. / Persico, A. / Buckley, J. / Tirano, S. / Lorenzi, P. / Vignon, R. / Feldis, H. et al. | 2010
- 68
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Investigation of charge-trap memories with AlN based band engineered storage layersMolas, G. / Colonna, J.P. / Kies, R. / Belhachemi, D. / Bocquet, M. / Gély, M. / Vidal, V. / Brianceau, P. / Martinez, E. / Papon, A.M. et al. | 2010
- 75
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Modeling of program, erase and retention characteristics of charge-trap gate all around memoriesNowak, Etienne / Perniola, Luca / Ghibaudo, Gérard / Molas, Gabriel / Reimbold, Gilles / De Salvo, Barbara / Boulanger, Fabien et al. | 2010
- 83
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Low power options for 32nm always-on SRAM architectureHamouche, Lahcen / Allard, Bruno et al. | 2010
- IFC
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Editorial Board| 2011