Ternary HfO2 and La2 O3 Based High- k Gate Dielectric Films for Advanced CMOS Applications (English)
- New search for: Toriumi, Akira
- New search for: Kita, Koji
- New search for: Toriumi, Akira
- New search for: Kita, Koji
In:
High Permittivity Gate Dielectric Materials
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371-394
;
2013
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ISSN:
- Article/Chapter (Book) / Print
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Title:Ternary HfO2 and La2 O3 Based High- k Gate Dielectric Films for Advanced CMOS Applications
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Contributors:Toriumi, Akira ( author ) / Kita, Koji ( author )
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Published in:Springer Series in Advanced Microelectronics ; 43 ; 371-394
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Publisher:
- New search for: Springer Berlin Heidelberg
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Place of publication:Berlin, Heidelberg
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Publication date:2013
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Size:24 Seiten
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ISBN:
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ISSN:
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DOI:
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Type of media:Article/Chapter (Book)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents eBook
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 1
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Introduction to High-k Gate StacksKar, Samares et al. | 2013
- 2
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MOSFET: Basics, Characteristics, and CharacterizationKar, Samares et al. | 2013
- 3
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Hafnium-Based Gate Dielectric MaterialsNishiyama, Akira et al. | 2013
- 4
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Hf-Based High-k Gate Dielectric ProcessingNiwa, Masaaki et al. | 2013
- 5
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Metal Gate ElectrodesSchaeffer, Jamie K. et al. | 2013
- 6
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VFB/VTH Anomaly in High-k Gate StacksToriumi, Akira / Nabatame, Toshihide et al. | 2013
- 7
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Channel MobilityYoung, Chadwin et al. | 2013
- 8
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Reliability Implications of Fast and Slow Degradation Processes in High-k Gate StacksBersuker, Gennadi et al. | 2013
- 9
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Lanthanide-Based High-k Gate Dielectric MaterialsLichtenwalner, Daniel J. et al. | 2013
- 10
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Ternary HfO2 and La2O3 Based High-k Gate Dielectric Films for Advanced CMOS ApplicationsToriumi, Akira / Kita, Koji et al. | 2013
- 11
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Crystalline Oxides on SiliconOsten, H. Jörg et al. | 2013
- 12
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High Mobility ChannelsHoussa, Michel / Ye, Peide / Heyns, Marc et al. | 2013