A novel interconnect optimal buffer insertion model considering the self-heating effect (English)
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- New search for: Wang, Ning
- New search for: Ding, Yaoshun
- New search for: Liu, Xiaoxian
- New search for: Wang, Fengjuan
- New search for: Zhang, Yan
- New search for: Dong, Gang
- New search for: Yang, Yintang
- New search for: Wang, Ning
- New search for: Ding, Yaoshun
- New search for: Liu, Xiaoxian
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In:
Journal of Semiconductors
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34
, 11
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115004/1-115004/6
;
2013
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ISSN:
- Article (Journal) / Print
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Title:A novel interconnect optimal buffer insertion model considering the self-heating effect
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Contributors:Zhang, Yan ( author ) / Dong, Gang ( author ) / Yang, Yintang ( author ) / Wang, Ning ( author ) / Ding, Yaoshun ( author ) / Liu, Xiaoxian ( author ) / Wang, Fengjuan ( author )
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Published in:Journal of Semiconductors ; 34, 11 ; 115004/1-115004/6
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Publisher:
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Publication date:2013
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Size:6 Seiten, 22 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 34, Issue 11
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 112001
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AC-electronic and dielectric properties of semiconducting phthalocyanine compounds: a comparative studySafa'a M. Hraibat / Rushdi M-L. Kitaneh / Mohammad M. Abu- Samreh / Abdelkarim M. Saleh et al. | 2013
- 112002
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Influence of an anisotropic parabolic potential on the quantum dot qubitZhao Cuilan / Cai Chunyu / Xiao Jingling et al. | 2013
- 112003
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Influence of incident angle on the defect mode of locally doped photonic crystalWang Jin / Wen Tingdun / Xu Liping / Liu Zufan et al. | 2013
- 113001
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Correlation between electrical conductivity—optical band gap energy and precursor molarities ultrasonic spray deposition of ZnO thin filmsSaid Benramache / Okba Belahssen / Abderrazak Guettaf / Ali Arif et al. | 2013
- 113002
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The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVDJing Liang / Xiao Hongling / Wang Xiaoliang / Wang Cuimei / Deng Qingwen / Li Zhidong / Ding Jieqin / Wang Zhanguo / Hou Xun et al. | 2013
- 114001
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Modeling and simulation of centroid and inversion charge density in cylindrical surrounding gate MOSFETs including quantum effectsP. Vimala / N. B. Balamurugan et al. | 2013
- 114002
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A new approach to extracting the RF parameters of asymmetric DG MOSFETs with the NQS effectSudhansu Kumar Pati / Kalyan Koley / Arka Dutta / N Mohankumar / Chandan Kumar Sarkar et al. | 2013
- 114003
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RF and microwave characteristics of a 10 nm thick InGaN-channel gate recessed HEMTT. R. Lenka / G. N. Dash / A. K. Panda et al. | 2013
- 114004
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Low ohmic contact AlN/GaN HEMTs grown by MOCVDGu Guodong / Dun Shaobo / Lü Yuanjie / Han Tingting / Xu Peng / Yin Jiayun / Feng Zhihong et al. | 2013
- 114005
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Improved memory performance of metal—oxide—nitride—oxide—silicon by annealing the SiO2 tunnel layer in different nitridation atmospheresHe Meilin / Xu Jingping / Chen Jianxiong / Liu Lu et al. | 2013
- 114006
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Light-extraction enhancement of freestanding GaN-based flip-chip light-emitting diodes using two-step roughening methodsAn Tielei / Sun Bo / Wei Tongbo / Zhao Lixia / Duan Ruifei / Liao Yuanxun / Li Jinmin / Yi Futing et al. | 2013
- 114007
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Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO2 dielectric and a TiN metal gateHan Kai / Ma Xueli / Xiang Jinjuan / Yang Hong / Wang Wenwu et al. | 2013
- 114008
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The corner rounding modeling technique in SPICE simulations for deeply scaled MOSFETsSun Wei / Yang Dake et al. | 2013
- 114009
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Rapid evaluation method for the normal lifetime of an infrared light-emitting diodeGuo Xiaofeng / Tan Manqing / Wei Xin / Jiao Jian / Guo Wentao / Sun Ningning et al. | 2013
- 114010
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Improvement of the electroluminescence performance of ZnO nanorods/p-GaN light emitting diodes with a ZnO films interlayerLi Shaolan / Zhang Lichun et al. | 2013
- 114011
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High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold currentDong Zhen / Wang Cuiluan / Jing Hongqi / Liu Suping / Ma Xiaoyu et al. | 2013
- 114012
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Growth and fabrication of a mid-wavelength infrared focal plane array based on type-II InAs/GaSbsuperlatticesWang Guowei / Xiang Wei / Xu Yingqiang / Zhang Liang / Peng Zhenyu / Lü Yanqiu / Si Junjie / Wang Juan / Xing Junliang / Ren Zhengwei et al. | 2013
- 114013
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The fabrication of vibration energy harvester arrays based on AlN piezoelectric filmShang Zhengguo / Li Dongling / Wen Zhiyu / Zhao Xingqiang et al. | 2013
- 114014
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A feasibility study on SiC optoinjected CCD with buried channelsYe Na / Chen Zhiming / Xie Longfei et al. | 2013
- 114015
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Design of a Bionic Cilia MEMS three-dimensional vibration sensorLi Zhen / Zhang Guojun / Xue Chenyang / Wu Shujuan et al. | 2013
- 114016
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A novel ESD protection structure for output padsFan Hang / Jiang Lingli / Zhang Bo et al. | 2013
- 115001
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A digital input class-D audio amplifier with sixth-order PWMLuo Shumeng / Li Dongmei et al. | 2013
- 115002
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A low power high gain gain-controlled LNA + mixer for GNSS receiversWei Binbin / Jiang Jinguang et al. | 2013
- 115003
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Design and analysis of a three-stage voltage-controlled ring oscillatorLei Xuemei / Wang Zhigong / Shen Lianfeng et al. | 2013
- 115004
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A novel interconnect optimal buffer insertion model considering the self-heating effectZhang Yan / Dong Gang / Yang Yintang / Wang Ning / Ding Yaoshun / Liu Xiaoxian / Wang Fengjuan et al. | 2013
- 115005
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A 97 dB dynamic range CSA-based readout circuit with analog temperature compensation for MEMS capacitive sensorsYin Tao / Zhang Chong / Wu Huanming / Wu Qisong / Yang Haigang et al. | 2013
- 115006
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60-GHz array antenna with standard CMOS technology on Schott BorofloatLuo Jun / Wang Yan / Yue Ruifeng et al. | 2013
- 115007
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A 4 GHz 32 bit direct digital frequency synthesizer based on a novel architectureWu Jin / Chen Jianwu / Wu Danyu / Zhou Lei / Jiang Fan / Jin Zhi / Liu Xinyu et al. | 2013