The study of critical current in YBaCuO thin films (English)
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- New search for: Zhang, Y.Z.
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In:
Journal of Applied Physics
;
64
, 8
;
4091-4094
;
1988
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ISSN:
- Article (Journal) / Print
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Title:The study of critical current in YBaCuO thin films
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Additional title:Untersuchungen der kritischen Stromstaerke in duennen Filmen aus YBaCuO
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Contributors:Yuan, C.W. ( author ) / Zhao, B.R. ( author ) / Zhang, Y.Z. ( author ) / Zhao, Y.Y. ( author ) / Lu, H. ( author ) / Wang, H.S. ( author ) / Shi, Y.H. ( author ) / Gao, J. ( author ) / Li, L. ( author )
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Published in:Journal of Applied Physics ; 64, 8 ; 4091-4094
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Publisher:
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Publication date:1988
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Size:4 Seiten, 5 Bilder, 20 Quellen
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ISSN:
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DOI:
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Type of media:Article (Journal)
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Type of material:Print
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Language:English
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Keywords:
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Source:
Table of contents – Volume 64, Issue 8
The tables of contents are generated automatically and are based on the data records of the individual contributions available in the index of the TIB portal. The display of the Tables of Contents may therefore be incomplete.
- 3777
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Thin‐skin electromagnetic fields around surface‐breaking cracks in metalsLewis, A. M. / Michael, D. H. / Lugg, M. C. / Collins, R. et al. | 1988
- 3785
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Application of computational fluid dynamics methods to a numerical study of electromagnetic wave scattering phenomenaLing, R. T. et al. | 1988
- 3792
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High‐temperature preservation of InP surface corrugations for distributed feedback lasersKnight, D. G. / Ingrey, S. J. / Benyon, W. / Lau, W. M. et al. | 1988
- 3799
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Heavy‐ion versus electron‐beam excitation of an excimer laserMoratz, Thomas J. / Saunders, Todd D. / Kushner, Mark J. et al. | 1988
- 3811
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Electron‐density distribution in a laser tube with a hyperboloid of revolution boundary: Nonisothermal caseYoung, Mary R. / Demas, Nicholas G. / Ventrice, Carl A. et al. | 1988
- 3815
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Thermal response of a laser‐irradiated metal slabBartholomeusz, Brian Josef et al. | 1988
- 3820
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Transient, combined conduction and radiation in an absorbing, emitting, and isotropically scattering solid cylinderTsai, J. R. / O¨zisik, M. N. et al. | 1988
- 3825
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Theoretical transient currents from two‐component unipolar space‐charge swarms in fields in mediaHenson, Bob L. et al. | 1988
- 3831
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Ultrahigh magnetic fields produced in a gas‐puff Z pinchFelber, F. S. / Wessel, F. J. / Wild, N. C. / Rahman, H. U. / Fisher, A. / Fowler, C. M. / Liberman, M. A. / Velikovich, A. L. et al. | 1988
- 3845
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Phase‐amplitude imaging: The fully automated analysis of megagauss magnetic field measurements in laser‐produced plasmasKalal, Milan / Luther‐Davies, Barry / Nugent, Keith A. et al. | 1988
- 3851
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Pressure measurements correlated with electrical explosion of metals in waterLee, W. M. / Ford, R. D. et al. | 1988
- 3855
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Temporal intensity modulation of spectral lines in a low‐frequency discharge in argonSeebo¨ck, R. J. / Ko¨hler, W. E. et al. | 1988
- 3863
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Negative ion formation at a barium surface exposed to an intense positive‐hydrogen ion beamvan Os, C. F. A. / van Amersfoort, P. W. / Los, J. et al. | 1988
- 3874
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A tandem radio‐frequency plasma torchUesugi, Takashi / Nakamura, Osamu / Yoshida, Toyonobu / Akashi, Kazuo et al. | 1988
- 3880
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Dislocation effect on the activation efficiency profile in Si‐implanted and SiN‐capped annealed GaAsHyuga, Fumiaki et al. | 1988
- 3885
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Experimental evidence for creation of luminescence quenching localized defects by moving dislocations in gallium arsenideJames, T. W. / James, J. B. / Harper, V. B. / Olsen, H. et al. | 1988
- 3890
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Crack nucleation at the surface of stressed fibersBouten, P. C. P. / de With, G. et al. | 1988
- 3901
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Evaluation of cylinder‐impact test data for constitutive model constantsJohnson, Gordon R. / Holmquist, Tim J. et al. | 1988
- 3911
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The thermal conductivity of Li2O x Al2O3 x nSiO2 glasses between 5 and 100 KHanna, B. / Bohn, R.G. et al. | 1988
- 3911
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The thermal conductivity of Li2O⋅Al2O3⋅nSiO2 glasses between 5 and 100 KHanna, B. / Bohn, R. G. et al. | 1988
- 3915
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Diffusion of oxygen in YBa2Cu3O7−yIkuma, Yasuro / Akiyoshi, Susumu et al. | 1988
- 3918
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A Markov treatment of the self‐diffusion dyadic in homogeneous crystalsMullins, W. W. et al. | 1988
- 3928
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The growth and structure of Cd0.95Fe0.05Te thin films grown by radio‐frequency sputteringAlvarez‐Fregoso, O. / Mendoza‐Alvarez, J. G. / Sa´nchez‐Sinencio, F. / Huanosta, A. et al. | 1988
- 3934
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Molecular‐beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxideDas, K. / Humphreys, T. P. / Posthill, J. B. / Tarn, J. C. L. / Wortman, J. J. / Parikh, N. R. et al. | 1988
- 3938
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In situ doping by As ion implantation of silicon grown by molecular‐beam epitaxyDenhoff, M. W. / Houghton, D. C. / Jackman, T. E. / Swanson, M. L. / Parikh, N. R. et al. | 1988
- 3945
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Optimum growth condition of single‐crystalline undoped ZnS grown by the molecular‐beam‐epitaxial method using a H2S gas sourceKaneda, Shigeo / Shimoguchi, Takefumi / Takahashi, Hironobu / Motoyama, Shin‐ici / Kano, Fumihisa / Yokoyama, Meiso / Satou, Shuji et al. | 1988
- 3945
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Optimum growth conditions of single-crystalline undoped ZnS grown by the molecular-beam-epitaxial method using a H2S gas sourceKaneda, S. / Shimoguchi, T. / Takahashi, H. / Motoyama, S. / Kano, F. / Yokoyama, M. / Sato, S. et al. | 1988
- 3949
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Properties of Si‐rich SiNx:H films prepared by plasma‐enhanced chemical vapor depositionKaya, C¸etin / Ma, Tso‐Ping / Chen, Tze‐Chiang / Barker, Richard C. et al. | 1988
- 3958
-
Properties of plasma‐deposited Si‐rich silicon nitride films in current enhancement injectorsKaya, C¸etin / Ma, Tso‐Ping / Barker, Richard C. et al. | 1988
- 3965
-
Surface segregation and preferential sputtering of bismuth in rf‐magnetron‐sputtered iron‐garnet filmsKrumme, J.‐P. / Otterloo, A. F. / Zalm, P. C. / Pertruzzello, J. et al. | 1988
- 3972
-
Investigation of the bubble formation mechanism in a‐Si:H films by Fourier‐transform infrared microspectroscopyMishima, Y. / Yagishita, T. et al. | 1988
- 3975
-
Characterization of p‐type GaAs heavily doped with carbon grown by metalorganic molecular‐beam epitaxySaito, Koki / Tokumitsu, Eisuke / Akatsuka, Takeshi / Miyauchi, Motoya / Yamada, Takumi / Konagai, Makoto / Takahashi, Kiyoshi et al. | 1988
- 3980
-
The structure and properties of ion‐beam‐synthesized boron nitride filmsSainty, W. G. / Martin, P. J. / Netterfield, R. P. / McKenzie, D. R. / Cockayne, D. J. H. / Dwarte, D. M. et al. | 1988
- 3987
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Effects of controlled As pressure annealing on deep levels of liquid‐encapsulated Czochralski GaAs single crystalsChichibu, Shigefusa / Ohkubo, Norio / Matsumoto, Satoru et al. | 1988
- 3994
-
Effects of dopants on the deep bulk levels in the ZnO‐Bi2O3‐MnO2 systemShim, Youngjae / Cordaro, James F. et al. | 1988
- 3999
-
Deep‐level transient spectroscopy studies of near‐surface hole and electron traps in Zn‐doped InP using high barrier Yb/p‐InP Schottky diodesSingh, A. / Anderson, W. A. et al. | 1988
- 4006
-
Photoinduced current transient spectroscopy in high‐resistivity bulk materials: Instrumentation and methodologyTapiero, M. / Benjelloun, N. / Zielinger, J. P. / El Hamd, S. / Noguet, C. et al. | 1988
- 4013
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Characterization of deep levels in Bi12GeO20 by photoinduced current transient spectroscopyBenjelloun, N. / Tapiero, M. / Zielinger, J. P. / Launay, J. C. / Marsaud, F. et al. | 1988
- 4024
-
Theory of high‐field electronic transport in bulk ZnS and ZnSeBrennan, Kevin et al. | 1988
- 4031
-
Development of a scanning minority‐carrier transient spectroscopy technique with optical injection and full transient analysisHeiser, T. / Mesli, A. / Courcelle, E. / Siffert, P. et al. | 1988
- 4041
-
Hot‐electron conduction in Hg0.8Cd0.2Te in the extreme magnetic quantum limit at low temperaturesBasu, Partha Pratim / Sarkar, C. K. / Chattopadhyay, D. et al. | 1988
- 4046
-
Electrical characteristics of Ti/Si(100) interfacesAboelfotoh, M. O. et al. | 1988
- 4056
-
Valence‐band mixing effects on the gain and the refractive index change of quantum‐well lasersAhn, D. / Chuang, S. L. / Chang, Y.‐C. et al. | 1988
- 4065
-
Influence of lattice misfit on heterojunction bipolar transistors with lattice‐mismatched InGaAs basesAshizawa, Y. / Akbar, S. / Schaff, W. J. / Eastman, L. F. / Fitzgerald, E. A. / Ast, D. G. et al. | 1988
- 4075
-
Surface states and the temperature dependence of microindentation damage in siliconDanyluk, Steven / Lee, Soo‐Wohn et al. | 1988
- 4082
-
Increased effective barrier heights in Schottky diodes by molecular‐beam epitaxy of CoSi2 and Ga‐doped Si on Si(111)Fathauer, R. W. / Lin, T. L. / Grunthaner, P. J. / Andersson, P. O. / Iannelli, J. M. / Jamieson, D. N. et al. | 1988
- 4086
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Electron transfer between regions with different confining potentialsFrohne, R. / Datta, S. et al. | 1988
- 4091
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The study of critical current in YBaCuO thin filmsYuan, C. W. / Zhao, B. R. / Zhang, Y. Z. / Zhao, Y. Y. / Lu, Y. / Wang, H. S. / Shi, Y. H. / Gao, J. / Li, L. et al. | 1988
- 4095
-
Study on the preparation of 90‐K superconductor LaBa2Cu3OyMaeda, A. / Noda, T. / Matsumoto, H. / Wada, T. / Izumi, M. / Yabe, T. / Uchinokura, K. / Tanaka, S. et al. | 1988
- 4103
-
A study of the fast permeability relaxation in amorphous ferromagnetsAllia, P. / Beatrice, C. / Vinai, F. / Mazzetti, P et al. | 1988
- 4108
-
Magnetic properties of Ni/Fe//SiO2 multilayer filmNagai, Yasuhiro / Senda, Masakatsu et al. | 1988
- 4113
-
Structure and magnetism of transition‐metal–magnesium thin films with an artificially layered structureSato, Noboru et al. | 1988
- 4123
-
Intersubband transitions in single AlGaAs/GaAs quantum wells studied by Fourier transform infrared spectroscopyAndersson, J. Y. / Landgren, G. et al. | 1988
- 4128
-
Prediction of optical properties of amorphous tetrahedrally bonded materialsCampi, D. / Coriasso, C. et al. | 1988
- 4135
-
Photoluminescence study of strain relaxation in Ga1−xInxAs/GaAs single heterostructuresMorris, D. / Roth, A. P. / Masut, R. A. / Lacelle, C. / Brebner, J. L. et al. | 1988
- 4141
-
Far‐infrared absorption of silicon crystalsOhba, Tetsuhiko / Ikawa, Shun‐ichi et al. | 1988
- 4144
-
Optical properties and microstructure of reactively sputtered indium nitride thin filmsSullivan, Brian T. / Parsons, R. R. / Westra, K. L. / Brett, M. J. et al. | 1988
- 4150
-
Ultraviolet photoelectron spectroscopic study of perfluorinated carboxylic acid monomolecular films prepared by vacuum depositionMitsuya, Munehisa / Seki, Kazuhiko / Inokuchi, Hiroo et al. | 1988
- 4154
-
Effects of in situ plasma supply in undoped and boron‐doped polycrystalline silicon by low‐pressure chemical vapor deposition at 500–840 °CHasegawa, S. / Morita, M. / Kurata, Y. et al. | 1988
- 4161
-
Platinum silicide formation using rapid thermal processingNaem, A. A. et al. | 1988
- 4168
-
Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes: Defect structures and deposition mechanismNonaka, Hidehiko / Arai, Kazuo / Fujino, Yoshiyuki / Ichimura, Shingo et al. | 1988
- 4175
-
Thin‐film hermeticity: A quantitative analysis of diamondlike carbon using variable angle spectroscopic ellipsometryOrzeszko, S. / De, Bhola N. / Woollam, John A. / Pouch, John J. / Alterovitz, Samuel A. / Ingram, David C. et al. | 1988
- 4181
-
Dielectric anisotropy of stretched poly(ethylene terephthalate) at microwave frequenciesOsaki, Shigeyoshi et al. | 1988
- 4187
-
Dopant redistribution during the solid‐phase growth of CrSi2 on Si(100)Rockett, A. / Greene, J. E. / Jiang, H. / O¨stling, M. / Petersson, C. S. et al. | 1988
- 4194
-
Electron‐beam evaporated phosphosilicate glass encapsulant for post‐implant annealing of GaAsSingh, S. / Baiocchi, F. / Butherus, A. D. / Grodkiewicz, W. H. / Schwartz, B. / Van Uitert, L. G. / Yesis, L. / Zydzik, G. J. et al. | 1988
- 4199
-
A generalized plasma etching modelZawaideh, Emad / Kim, N. S. et al. | 1988
- 4208
-
Three‐fluid simulation of the plasma‐erosion‐opening switchMason, Rodney J. / Jones, Michael E. / Grossmann, John M. / Ottinger, Paul F. et al. | 1988
- 4212
-
Stability of magnets levitated above superconductorsDavis, L. C. / Logothetis, E. M. / Soltis, R. E. et al. | 1988
- 4219
-
Effect of light‐induced defects on the short wavelength quantum efficiencies of amorphous silicon solar cell structuresFortmann, C. M. / Lange, S. / Hicks, M. / Wronski, C. R. et al. | 1988
- 4223
-
Electrical and thermal properties of a varistor at cryogenic temperaturesLawless, W. N. / Clark, C. F. / Patton, B. R. / Khan, F. S. et al. | 1988
- 4229
-
New varistor materialModine, F. A. / Hyatt, H. M. et al. | 1988
- 4233
-
Photomodulated absorption spectroscopy on AlGaAs‐GaAs heterostructuresVan Hoof, C. / Arent, D. J. / Deneffe, K. / De Boeck, J. / Borghs, G. et al. | 1988
- 4236
-
Equation of state for liquidsCho, Bongkee et al. | 1988
- 4239
-
Spectroscopic analysis of insulating crystal fibersBuoncristiani, A. M. / Byvik, C. E. / Albin, S. et al. | 1988
- 4241
-
Heteroepitaxial growth of ZnSe on (111) Si by low‐pressure metalorganic chemical vapor depositionLee, M. K. / Chang, J. H. / Yeh, M. Y. / Lin, Y. F. et al. | 1988
- 4243
-
Comment on ‘‘Noncontact doping level determination in GaAs using photoreflectance spectroscopy’’ [J. Appl. Phys. 62, 4558 (1987)]Bottka, N. / Gaskill, D. K. et al. | 1988
- 4244
-
Reply to ‘‘Comment on ‘Noncontact doping level determination in GaAs using photoreflectance spectroscopy’ ’’ [J. Appl. Phys. 62, 4558 (1987)]Theis, W. M. / Peters, L. / Phaneuf, L. / Kapitan, L. W. et al. | 1988
- 4245
-
Effect of neutron irradiation on responsivity of p‐i‐n photodetectorsGedam, Subhash G. / Banerjee, Pranab K. / Mitra, Shashanka S. et al. | 1988
- 4248
-
Harmonic multiplication using resonant tunnelingSollner, T. C. L. G. / Brown, E. R. / Goodhue, W. D. / Correa, C. A. et al. | 1988
- 4251
-
Amorphous iron particles in cosputtered Fe‐SiO2 filmsHoltz, R. L. / Edelstein, A. S. / Lubitz, P. / Gossett, C. R. et al. | 1988
- 4253
-
Very low interface recombination velocity in (Al,Ga)As heterostructures grown by organometallic vapor‐phase epitaxyMolenkamp, L. W. / van’t Blik, H. F. J. et al. | 1988
- 4257
-
Erratum: ‘‘Toward an algorithm to make cuts for magnetic scalar potentials in finite element meshes’’ [J. Appl. Phys. 63, 3357 (1988)]Kotiuga, P. R. et al. | 1988